WO2017026197A1 - ドライエッチング方法 - Google Patents

ドライエッチング方法 Download PDF

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WO2017026197A1
WO2017026197A1 PCT/JP2016/069569 JP2016069569W WO2017026197A1 WO 2017026197 A1 WO2017026197 A1 WO 2017026197A1 JP 2016069569 W JP2016069569 W JP 2016069569W WO 2017026197 A1 WO2017026197 A1 WO 2017026197A1
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dry etching
etching
sin
volume
sio
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PCT/JP2016/069569
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English (en)
French (fr)
Japanese (ja)
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啓之 大森
章史 八尾
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セントラル硝子株式会社
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Priority to KR1020187004417A priority Critical patent/KR102090650B1/ko
Priority to CN201680044981.7A priority patent/CN107924837B/zh
Priority to US15/743,534 priority patent/US10741406B2/en
Priority to CN202210020327.XA priority patent/CN114512399A/zh
Publication of WO2017026197A1 publication Critical patent/WO2017026197A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching

Definitions

  • the present invention relates to a dry etching method using a dry etching agent containing a fluorine-containing unsaturated hydrocarbon.
  • Non-Patent Document 1 a polycrystalline silicon (hereinafter referred to as poly-Si or p-Si) layer and a silicon oxide (hereinafter referred to as SiO x ) layer are formed on a substrate.
  • a structure in which a large number of layers are alternately stacked and structures that become electrodes perpendicular to the layers are embedded is employed.
  • both the substrate as a base and the layer included in the laminated film are Si, the substrate is damaged in the etching process of the laminated film, and p. it is difficult only for etching the laminated film consisting of -Si and SiO x.
  • Non-Patent Document 2 a NAND flash memory using a laminated film made of silicon nitride (hereinafter referred to as SiN) and SiO x instead of a laminated film made of p-Si and SiO x has been studied. ing.
  • an alternating laminated film composed of the SiN layer 1 and the SiO x layer 2 is previously prepared on the substrate 4 as shown in FIG. 1A, and as shown in FIG. A through hole 5 is formed by etching in a direction perpendicular to the layer. Thereafter, although not shown, a process of removing the SiN layer and forming a gate is performed.
  • Non-Patent Document 3 when forming a large capacity memory called BiCS, an alternating laminated film of Si and SiO 2 is formed.
  • a process of forming a through hole by alternately repeating Si etching and SiO 2 etching as independent processes is shown.
  • Patent Document 1 a method of simultaneously etching different types of layers by a single plasma etching using a mixed gas containing a CF-based gas and a CHF-based gas may be used.
  • Patent Document 2 discloses that an etching agent composed of fluorine-containing unsaturated hydrocarbons including HFO-1234ze (E) has a high etching rate with respect to both SiN and SiO 2 , and It is disclosed that etching with a high aspect ratio is possible with high selectivity to a mask.
  • etching agents including 1,3,3,3-tetrafluoropropene, additive gas, and inert gas are used, including C 4 F 6 and C 4 F 8.
  • the etching selectivity of the mask is higher than that of the CF-based gas, and abnormalities in the etching shape such as a shoulder drop and bowing of the mask can be suppressed.
  • the etching rate of SiN is higher than the etching rate of SiO x. About 1.2 times larger. This characteristic is effective in preventing an etching shape abnormality due to a decrease in the etching rate in the SiN layer that occurs when only the above-described CF-based gas is used, but it has an extremely large aspect ratio exceeding the aspect ratio of 20. This may cause a new etching shape abnormality in the deep etching of the laminated film for forming the through hole.
  • Si—N bond constituting SiN has a weaker bond energy than the Si—O bond constituting SiO x . Therefore, the etching of SiO x hardly proceeds unless the ion energy is increased by the application of the bias voltage.
  • SiN is etched using an etching gas containing H atoms and F atoms, etching proceeds relatively easily without application of a bias voltage. Therefore, it is considered that SiN was selectively and isotropically etched in the horizontal direction when the high aspect ratio etching was performed. Further, there may be a SiN layer on the SiO x layer due to the structure.
  • the SiO x etching rate in the direction perpendicular to the layer rather than the SiO x etching rate in the direction perpendicular to the layer.
  • the SiN etching rate increases.
  • excessive SiN etching in the horizontal direction of the SiN layer occurs.
  • the mechanism of excessive generation of this horizontal SiN etching is considered as follows. During the normal etching process, there are always active species having the potential to etch SiN anisotropically and isotropically in the holes, and ions accelerated by the bias voltage are added to the active species. In addition to anisotropic etching, anisotropic etching becomes dominant. However, when the lower SiO x layer is exposed, SiN does not exist in a direction perpendicular to the layer, and thus the active species for SiN described above cannot contribute to anisotropic etching. It is thought that all contribute to isotropic etching in the horizontal direction. For this reason, it is considered that isotropic etching in the horizontal direction of the SiN layer progresses at an accelerated rate as compared with the case where the lower SiN layer is exposed through the SiO x layer.
  • Patent Document 2 discloses a method of selectively etching SiN or SiO x , but does not disclose a specific method for arbitrarily controlling the etching rate of SiN and SiO x .
  • the present invention has been made in view of the above problems, and in a method of performing plasma etching using 1,3,3,3-tetrafluoropropene as an etching gas, a laminated film of SiO x and SiN is used.
  • a laminated film of SiO x and SiN is used.
  • an etching method that can arbitrarily control the SiO x etching rate ratio (SiN / SiO x ratio) with respect to the SiN etching rate within a range of 0.90 to 1.5 and also has high selectivity to the mask. It is intended to provide.
  • the present inventors have found that at least 1 in the step of forming a through hole perpendicular to the layer at a site where a large number of SiN and SiO x are alternately laminated on the substrate. , 3,3,3-tetrafluoropropene and unsaturated perfluorocarbon having 2 to 5 carbon atoms in a predetermined ratio are used, and plasma etching is performed to perform SiO etching with respect to the etching rate of SiN.
  • etch rate ratio of x can arbitrary control between less than (SiN / SiO x ratio) 0.90 1.5, and found to have a high etch selectivity with respect to the mask, leading to the present invention .
  • the present invention provides a dry etching agent for a laminated film of a silicon oxide layer and a silicon nitride layer formed on a substrate through a mask having a predetermined opening pattern formed on the laminated film.
  • a dry etching method in which etching is performed by applying a bias voltage of 500 V or more to form a through hole in a direction perpendicular to the layer, wherein the dry etching agent is at least C 3 H 2 F 4.
  • the volume of the unsaturated perfluorocarbon contained in the dry etching agent is in the range of 0.1 to 10 times the volume of the C 3 H 2 F 4 contained in the dry etching agent.
  • the unsaturated perfluorocarbon is at least one selected from the group consisting of C 3 F 6 , C 4 F 6 , C 4 F 8 , and C 5 F 8 , and the unsaturated perfluorocarbon in the dry etching agent
  • the total concentration of C 3 H 2 F 4 is preferably 5% by volume or more.
  • the dry etching agent may be composed of only C 3 H 2 F 4 , the unsaturated perfluorocarbon, the oxidizing gas, and the inert gas.
  • C 3 H 2 F 4 is preferably 1,3,3,3-tetrafluoropropene.
  • the etching rate of SiN is increased.
  • the etch rate of SiO x (SiN / SiO x ratio) can optionally control in less than 0.90 to 1.5, and can be etched with high selectivity with respect to the mask for.
  • (A), (b) It is the schematic of the laminated structure of the element before and after forming a through-hole. It is the schematic of the unexpected SiN isotropic etching which generate
  • an alternate laminated film composed of a SiN layer 1 and a SiO x layer 2 and a mask 3 having a predetermined opening pattern are prepared in advance on a substrate 4.
  • through holes 5 are formed by etching through the mask 3 in a direction perpendicular to the layer, that is, in a direction perpendicular to the substrate 4.
  • the through hole 5 has an aspect ratio (the thickness a of the alternate laminated film is masked).
  • 3 is a very elongated hole having a value divided by the width b of the opening 3) of 20 or more.
  • Examples of the unsaturated perfluorocarbon represented by C x F y include C 2 F 2 , C 2 F 4 , C 3 F 4 , C 3 F 6 , C 4 F 2 , C 4 F 4 , C 4 F 6 , Examples thereof include compounds selected from the group consisting of C 4 F 8 , C 5 F 4 , C 5 F 6 , C 5 F 8 and C 5 F 10 and mixtures thereof.
  • C 2 F 4 , C 3 F 6 , C 4 F 6 , C 4 F 8 , C 5 F 8 , and C 5 F 10 are preferable, and considering the ease of handling such as vapor pressure and explosiveness, C 3 F 6 , C 4 F 6 , C 4 F 8 and C 5 F 8 are particularly preferred.
  • the unsaturated perfluorocarbon represented by C x F y has one or more double bonds or triple bonds, and may be linear or cyclic.
  • the unsaturated perfluorocarbon represented by C x F y may have structural isomers and stereoisomers (trans isomer (E isomer) and cis isomer (Z isomer)). In the present invention, any isomer or a mixture of both can be used.
  • Examples of C 2 F 4 include tetrafluoroethylene.
  • Examples of C 3 F 6 include hexafluoropropane.
  • C 4 F 6 examples include hexafluoro-1,3-butadiene, hexafluoro-2-butyne, and hexafluorocyclobutene.
  • C 4 F 8 includes octafluoro-2-butene, octafluoro-1-butene, and octafluoroisobutene.
  • C 5 F 8 includes octafluoro-1,4-pentadiene and octafluorocyclopentene.
  • C 5 F 10 includes decafluoro-1,4-pentene.
  • C 3 H 2 F 4 includes 2,3,3,3-tetrafluoropropene (HFO-1234yf), trans-1,3,3,3-tetrafluoropropene (HFO-1234ze (E)), cis- Any of 1,3,3,3-tetrafluoropropene (HFO-1234ze (Z)) may be used.
  • HFO-1234yf 2,3,3,3-tetrafluoropropene
  • E trans-1,3,3,3-tetrafluoropropene
  • Z cis- Any of 1,3,3,3-tetrafluoropropene
  • the unsaturated perfluorocarbon represented by C x F y has an unsaturated bond in the molecule, it is polymerized by polymerization in plasma and deposited on the side wall of the through hole to form a protective film. Therefore, it is possible to suppress isotropic etching of SiN that proceeds only with C 3 H 2 F 4 .
  • the concentration of C 3 H 2 F 4 is for obtaining a sufficient etching rate, the C 3 H 2 F 4 and C x F y, later oxidizing gas, the total of the dry etching agent also including an inert gas It is preferably 1% by volume or more, particularly preferably 5% by volume or more, with respect to the flow rate.
  • the total concentration of C 3 H 2 F 4 and C x F y in the dry etching agent is preferably 5% by volume or more of the total flow rate.
  • the total concentration of C 3 H 2 F 4 and C x F y exceeds 50% by volume of the total flow rate, a sufficient concentration of oxidizing gas cannot be secured, and expensive fluorine-containing unsaturated carbonization is not possible. Although it contains a large amount of hydrogen, the etching rate does not increase, which is not preferable in terms of cost effectiveness.
  • the mixing ratio of the unsaturated perfluorocarbon represented by C 3 H 2 F 4 and C x F y is preferably 1: 0.1 to 10 by volume, more preferably 1: 0.2 to 1.0. A ratio of 1: 0.4 to 0.7 is particularly preferable. If there is too much unsaturated perfluorocarbon represented by C x F y , the anisotropic etching rate in the vertical direction of the SiN layer is also greatly reduced, and the desired etching shape may not be obtained.
  • the unsaturated perfluorocarbon represented by C x F y has a double bond or a triple bond in the molecule, so that it polymerizes in plasma and forms a protective film on a mask such as a resist. . Thereby, it is possible to obtain a sufficient etching selection ratio with respect to the resist.
  • a saturated perfluorocarbon is susceptible slightly control the etch rate of the SiO x to the etching rate of the SiN (SiN / SiO x ratio)
  • the degree is not sufficient, also the mask An etching selectivity cannot be obtained, and it is not suitable as an etching gas for ultra-high aspect ratio etching exceeding an aspect ratio of 20.
  • the etching rates of the SiN layer and the SiO x layer can be arbitrarily controlled, the laminated film of the SiN layer and the SiO x layer can be etched in one step. Furthermore, since the etching rates are equal, there are few irregularities on the walls (inner surfaces) of the holes formed in the laminated film, and holes with a uniform hole diameter at the upper and lower portions can be formed in the laminated film.
  • An oxidizing gas is added to the dry etching agent.
  • the oxidizing gas O 2 , O 3 , CO, CO 2 , COCl 2 , COF 2 , NO 2 or the like can be used.
  • oxygen it is preferable to use oxygen because it is easily available and handled.
  • the addition amount of the oxidizing gas is preferably 1 to 50% by volume, more preferably 2 to 30% by volume, and particularly preferably 5 to 10% by volume of the entire dry etching agent.
  • the dry etching agent preferably contains an inert gas in order to increase the safety of handling while reducing the cost.
  • an inert gas a rare gas such as argon gas, helium gas, neon gas, krypton gas, xenon gas, or nitrogen gas can be used.
  • Argon gas is particularly preferable because it can be expected to have an ion assist effect in addition to availability.
  • the dry etching agent may be composed of only C 3 H 2 F 4 , an unsaturated perfluorocarbon represented by C x F y , an oxidizing gas, and an inert gas.
  • a known gas can be further added to the dry etching agent.
  • saturated fluorocarbons represented by C 1 H m F n , CHF 3 , CH 2 F 2 , CH 3 F, C 2 H 2 F 4 , C 2 HF 5 , C 3 HF 7 , C 3 H 2 F 6 , C 3 H 3 F 5 , C 3 H 4 F 4 , C 3 H 5 F 3 , C 4 HF 9 and the like can be mentioned.
  • Examples of the hydrocarbon gas include CH 4 , C 2 H 2 , C 2 H 4 , C 2 H 6 , C 3 H 4 , C 3 H 6 , and C 3 H 8 .
  • Examples of the reducing gas include H 2 , NH 3 , NO, and the like.
  • the dry etching agent may be composed of only C 3 H 2 F 4 , an unsaturated perfluorocarbon represented by C x F y , an oxidizing gas, an inert gas, and the additive gas. .
  • the bias voltage to be generated is required to be 500 V or more and preferably 1000 V or more in order to perform etching with high straightness in a direction perpendicular to the layer.
  • the higher the bias voltage the more the side etch can be reduced.
  • the bias voltage exceeds 10,000 V, the substrate is damaged, which is not preferable.
  • the gas components contained in the etching gas may be independently introduced into the chamber, or may be introduced into the chamber after being adjusted in advance as a mixed gas.
  • the total flow rate of the dry etching agent introduced into the reaction chamber can be appropriately selected in consideration of the concentration condition and pressure condition, depending on the volume of the reaction chamber and the exhaust capacity of the exhaust part.
  • the pressure at the time of etching is preferably 10 Pa or less, more preferably 5 Pa or less, and particularly preferably 1 Pa or less in order to obtain stable plasma and to improve the straightness of ions and suppress side etching.
  • the pressure in the chamber is too low, ionization ions are reduced and a sufficient plasma density cannot be obtained, so 0.05 Pa or more is preferable.
  • the substrate temperature during etching is preferably 50 ° C. or lower, and in particular, 20 ° C. or lower is desirable for performing anisotropic etching. If the temperature is higher than 50 ° C., the amount of protective film mainly composed of fluorocarbon radicals on the side walls is reduced, and the tendency of isotropic etching to increase is increased, so that the required processing accuracy cannot be obtained. In addition, a mask material such as a resist may be significantly etched.
  • the etching time is preferably within 30 minutes in consideration of the efficiency of the element manufacturing process.
  • the etching time is the time during which plasma is generated in the chamber and the dry etching agent is reacted with the sample.
  • the number of layers in the laminated film and the depth of through-holes to be formed are not particularly limited. However, in order to obtain a stacking effect by lamination, the total number of SiN layers and SiO x layers is 6 or more, and the depth of the through-holes Is preferably 0.5 ⁇ m or more.
  • the etching method using the dry etching agent of the present invention includes capacitively coupled plasma (CCP) etching, reactive ion etching (RIE), inductively coupled plasma (ICP) etching, electron cyclotron resonance (ECR) plasma etching, and
  • CCP capacitively coupled plasma
  • RIE reactive ion etching
  • ICP inductively coupled plasma
  • ECR electron cyclotron resonance
  • the etching can be performed without being limited to various etching methods such as microwave etching.
  • the composition of C 3 H 2 F 4 and C x F y contained in the dry etching agent is not necessarily constant during the etching process.
  • the ratio does not need to be fixed, and may be changed stepwise or periodically during the etching process.
  • the amount of unsaturated perfluorocarbon contained in the dry etching agent is reduced by the amount of unsaturated perfluorocarbon contained in the dry etching agent because the influence of the horizontal etching on the SiN layer constituting the side wall above the through-hole is large. You may increase the amount in the first half.
  • the amount of unsaturated perfluorocarbon contained in the dry etching agent is reduced to increase the etching rate, and when the SiO x layer is etched, the SiN layer is moved in the horizontal direction. In order to suppress this etching, the amount of unsaturated perfluorocarbon contained in the dry etching agent can be increased.
  • a dry etching process in which C x F y is not added to the dry etching agent that is, a dry etching process that includes C 3 H 2 F 4 and an oxidizing gas, and C x F y is included.
  • a step of etching using a dry etching agent that does not substantially contain any of the above may be included.
  • the content of C x F y contained as an impurity in C 3 H 2 F 4 for etching is usually 0.1% by volume or less. Therefore, comprises an oxidizing gas and C 3 H 2 F 4, the content of C x F C x dry during the etching agent that is substantially free of y F y is usually 0.1% by volume or less.
  • etching to the first half of the formation of the through-hole that is, about half of the laminated film (for example, 1/2 to 5/8 of the thickness of the laminated film), C 3 H 2 F 4 and the oxidizing gas, and the first dry etching process using the first dry etching agent substantially free of C x F y is performed, and the latter half of the formation of the through hole, that is, the laminated film is cut by about half.
  • a second dry etching step using a second dry etching agent containing C 3 H 2 F 4 , an oxidizing gas, and C x F y can be considered.
  • the first etching process can perform high-speed SiN etching, and the through-hole in which the horizontal SiN etching is a problem is removed.
  • the laminated film can be etched while suppressing horizontal SiN etching by adding C x F y to the dry etching agent in the second dry etching step. That is, the time required for forming the through hole can be shortened while preventing SiN etching in the horizontal direction.
  • the first etching step of etching without adding C x F y is applied, and the SiO x layer of the laminated film is etched.
  • the second etching step which is the etching method of the present invention.
  • the second etching process that can suppress the lateral etching of the SiN layer is applied when the SiO x layer is etched, and the SiN etching speed is high and dry etching without adding C x F y is performed when the SiN layer is etched.
  • a first etching step of etching SiN with an agent can be applied.
  • the dry etching agent to be supplied needs to be changed according to the number of layers of the SiN layer and the SiO x layer.
  • the dry etching agent can be changed. Therefore, a large work is not necessary for switching the etching method of each layer, and the process is not so complicated.
  • Non-Patent Document 3 since a halogen gas is used for etching the Si layer and a fluorocarbon-based gas is used for etching the SiO 2 layer, it is necessary to evacuate the chamber for switching the etching of each layer. In addition, many operations are required, the process is complicated, and time is required.
  • the etching method of the present invention can arbitrarily control the etching rate of SiO x (SiN / SiO x ratio) with respect to the etching rate of SiN between 0.90 and less than 1.5, and also has high selectivity to the mask. Etching can be performed. Therefore, the etching method of the present invention can be used in a process of forming a through-hole having an aspect ratio of 20 in an alternate laminated film of SiN and SiO x in the process of manufacturing a three-dimensional NAND flash memory.
  • the reactive product generated from C x F y and the like deposited on the side wall of the through hole and the mask are removed. Therefore, an ashing process in which ashing is performed using plasma generated from a processing gas containing oxygen gas may be performed.
  • FIG. 3 is a schematic view of the reaction apparatus 10 used in Examples and Comparative Examples.
  • a lower electrode 14, an upper electrode 15, and a pressure gauge 12 that have a function of holding the sample 18 and also function as a stage are installed.
  • a gas inlet 16 is connected to the upper portion of the chamber 11.
  • the pressure in the chamber 11 can be adjusted, and a dry etching agent can be excited by a high frequency power source (13.56 MHz) 13. Thereby, the excited dry etching agent is brought into contact with the sample 18 placed on the lower electrode 14, and the sample 18 can be etched.
  • a high frequency power source 13.56 MHz
  • a DC voltage called a bias voltage is generated between the upper electrode 15 and the lower electrode 14 due to the difference in the movement speed of ions and electrons in the plasma. It is comprised so that it can be made to.
  • the gas in the chamber 11 is discharged via the gas discharge line 17.
  • a silicon wafer A having a SiN layer and a silicon wafer B having a SiO 2 layer were placed on a stage.
  • the SiN layer and the SiO 2 layer were produced by a CVD method.
  • C 3 H 2 F 4 HFO-1234ze (E)
  • C 3 F 6 O 2, and Ar are used as etching agents, respectively at 10% by volume, 1% by volume, and 6% by volume with respect to the total flow rate.
  • Etching was performed by mixing at 83% by volume and supplying a high-frequency power of 400 W to make the etching agent into plasma by circulating the mixture at a total volume of 100 sccm.
  • the bias voltage is 500V.
  • the etching rate was determined from the change in thickness of the SiN layer of the silicon wafer A and the SiO 2 layer of the silicon wafer B before and after the etching.
  • Example 2 As an etching agent, C 3 H 2 F 4 (HFO-1234ze (E)), C 3 F 6 (hexafluoropropane), O 2 and Ar were respectively 10% by volume, 3% by volume, 6% of the total flow rate. Etching was performed under the same conditions as in Example 1 except that mixing was performed at a volume% of 81% by volume.
  • Example 3 As an etching agent, C 3 H 2 F 4 (HFO-1234ze (E)), C 3 F 6 , O 2, and Ar are respectively 10% by volume, 5% by volume, 6% by volume, and 79% by volume with respect to the total flow rate. Etching was performed under the same conditions as in Example 1 except that the mixing was performed in%.
  • Example 4 As an etching agent, C 3 H 2 F 4 (HFO-1234ze (E)), c-C 5 F 8 (octafluorocyclopentene), O 2 and Ar are respectively 10% by volume and 1% by volume with respect to the total flow rate. Etching was performed under the same conditions as in Example 1 except that mixing was performed at 6 vol% and 83 vol%.
  • Example 5 As an etchant, C 3 H 2 F 4 (HFO-1234ze (E)), c-C 5 F 8 , O 2 and Ar were respectively 10% by volume, 3% by volume, 9% by volume, Etching was performed under the same conditions as in Example 1 except that mixing was performed at 78% by volume.
  • Example 6 As an etchant, C 3 H 2 F 4 (HFO-1234ze (E)), C 4 F 6 (hexafluoro-1,3-butadiene), O 2 and Ar are each 10% by volume with respect to the total flow rate, Etching was performed under the same conditions as in Example 1 except that mixing was performed at 1 vol%, 6 vol%, and 83 vol%.
  • Example 7 As an etching agent, C 3 H 2 F 4 (HFO-1234ze (E)), C 4 F 6 , O 2, and Ar are respectively 10% by volume, 3% by volume, 9% by volume, and 78% by volume with respect to the total flow rate. Etching was performed under the same conditions as in Example 1 except that the mixing was performed in%.
  • Example 8 As an etching agent, C 3 H 2 F 4 (HFO-1234ze (E)), C 4 F 6 , O 2, and Ar are respectively 5% by volume, 10% by volume, 6% by volume, and 79% by volume with respect to the total flow rate. Etching was performed under the same conditions as in Example 1 except that the mixing was performed in%.
  • Example 7 As an etching agent, C 3 H 2 F 4 (HFO-1234ze (E)), TFPy (3,3,3-trifluoropropyne), O 2 and Ar are respectively 10% by volume and 3% by volume with respect to the total flow rate. Etching was performed under the same conditions as in Example 1 except that the mixing was performed at%, 9% by volume, and 78% by volume.
  • the results of each example and comparative example are shown in Table 1.
  • the etching rate ratio in Table 1 is the SiO x etching rate ratio (SiN / SiO x ratio) with respect to the SiN etching rate, and the etching rate ratio is a selectivity ratio of the resist etching rate with respect to the SiO x etching rate (SiO x). / Resist ratio).
  • the etching rate ratio of SiN to SiO x is 0.90 or more and less than 1.5, and the selection ratio to the resist is not added. It was equal to or better than the case.
  • This dry etching method enables anisotropic etching of a laminated film made of SiO x and SiN while suppressing excessive etching of the SiN layer. Further, as is apparent from Examples 6 to 8 and the like, the etching rate ratio of SiN to SiO x can be controlled by adjusting the ratio of C 3 H 2 F 4 and unsaturated perfluorocarbon.
  • Comparative Example 1 since the unsaturated perfluorocarbon represented by C x F y was not included, the SiN etching rate was too high, and the ratio of the SiN etching rate to the SiO x etching rate was 1.63. .
  • Comparative Examples 2, 3, and 4 a saturated perfluorocarbon having no double bond is used as the additive gas. As a result, the ratio between the SiN etching rate and the SiO x etching rate is 1.5 or more, and the selectivity with respect to the resist is also deteriorated as compared with the case where it is not added.
  • FIG. 4 is a diagram showing SiN / SiO x etching rate ratios and etching selectivity ratios (SiO x / resist) of 4 and 7; As shown in FIG. 4 (a), the SiN / SiO x etching rate ratio is determined when C 3 F 6 , C 5 F 8 and C 4 F 6 which are unsaturated perfluorocarbons having a double bond are added.
  • the unsaturated perfluorocarbon represented by C x F y is added at a ratio exceeding 10 with respect to C 3 H 2 F 4 , and the SiN etching rate is too low.
  • the ratio of the SiO x etching rate is 0.89, and the selectivity with respect to the resist is also deteriorated as compared with the case where it is not added.
  • Comparative Example 6 since only C 3 F 6 , that is, only unsaturated perfluorocarbon, was used, the SiN etching rate was low, and the ratio of the SiN etching rate to the SiO x etching rate was 0.85. Therefore, even if Comparative Example 6 is applied to the laminated film of the SiN layer and the SiO x layer, it is considered that gas-derived deposits are deposited on the SiN layer and a through hole cannot be formed.
  • Comparative Example 7 Although TFPy containing a hydrogen atom and having a triple bond was added, the etching selectivity of SiO x / resist was greatly improved, but the SiN / SiO x etching rate ratio was not much different from Comparative Example 1. . That is, it is considered that the protective film derived from TFPy was mainly formed on the resist, but was hardly formed on the SiN layer.
  • the present invention is effective for forming a wiring to an element such as a three-dimensionally integrated NAND flash memory in a semiconductor manufacturing process.
  • SiN layer 2 SiO x layer 3 masks 4 substrate 5 through hole 10 reactor 11 chamber 12 pressure gauge 13 high frequency power supply 14 lower electrode 15 upper electrode 16 gas inlet 17 exhaust gas line 18 samples

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