WO2016203659A1 - 半導体装置用ボンディングワイヤ - Google Patents

半導体装置用ボンディングワイヤ Download PDF

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Publication number
WO2016203659A1
WO2016203659A1 PCT/JP2015/070861 JP2015070861W WO2016203659A1 WO 2016203659 A1 WO2016203659 A1 WO 2016203659A1 JP 2015070861 W JP2015070861 W JP 2015070861W WO 2016203659 A1 WO2016203659 A1 WO 2016203659A1
Authority
WO
WIPO (PCT)
Prior art keywords
wire
bonding
bonding wire
semiconductor device
core material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2015/070861
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
山田　隆
大造 小田
榛原　照男
良 大石
齋藤　和之
宇野　智裕
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Micrometal Corp
Nippon Steel Chemical and Materials Co Ltd
Original Assignee
Nippon Micrometal Corp
Nippon Steel and Sumikin Materials Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Micrometal Corp, Nippon Steel and Sumikin Materials Co Ltd filed Critical Nippon Micrometal Corp
Priority to US15/107,421 priority Critical patent/US10137534B2/en
Priority to EP15866375.7A priority patent/EP3131113B1/en
Priority to CN201580002424.4A priority patent/CN106489199B/zh
Priority to DE112015004422.1T priority patent/DE112015004422B4/de
Priority to SG11201604432SA priority patent/SG11201604432SA/en
Priority to JP2015552702A priority patent/JP5912008B1/ja
Priority to KR1020167029046A priority patent/KR20180008245A/ko
Priority to KR1020167010922A priority patent/KR101670209B1/ko
Priority to EP16811374.4A priority patent/EP3282473B1/en
Priority to EP18154972.6A priority patent/EP3349246B1/en
Priority to KR1020187034354A priority patent/KR20180129987A/ko
Priority to CN201680002657.9A priority patent/CN106688086A/zh
Priority to PCT/JP2016/064926 priority patent/WO2016203899A1/ja
Priority to KR1020177024954A priority patent/KR101925236B1/ko
Priority to DE112016000133.9T priority patent/DE112016000133B4/de
Priority to CN201711344468.2A priority patent/CN107962313B/zh
Priority to CN202110317355.3A priority patent/CN113078134A/zh
Priority to KR1020177005522A priority patent/KR101777995B1/ko
Priority to JP2016533746A priority patent/JP5985127B1/ja
Priority to US15/515,508 priority patent/US10414002B2/en
Priority to DE112016002674.9T priority patent/DE112016002674B3/de
Priority to TW105116514A priority patent/TWI567211B/zh
Priority to TW107104291A priority patent/TWI715824B/zh
Priority to TW105137924A priority patent/TWI618802B/zh
Priority to PH12016501076A priority patent/PH12016501076B1/en
Priority to CN201680027572.6A priority patent/CN107533992B/zh
Priority to US15/577,735 priority patent/US10737356B2/en
Priority to TW105118619A priority patent/TWI631227B/zh
Priority to KR1020177032781A priority patent/KR101910762B1/ko
Priority to JP2017525235A priority patent/JP6321297B2/ja
Priority to DE112016002703.6T priority patent/DE112016002703B4/de
Priority to PCT/JP2016/067624 priority patent/WO2016204138A1/ja
Priority to TW107122893A priority patent/TWI763878B/zh
Priority to KR1020187029699A priority patent/KR20180115363A/ko
Priority to JP2016151318A priority patent/JP6254649B2/ja
Publication of WO2016203659A1 publication Critical patent/WO2016203659A1/ja
Priority to JP2017228996A priority patent/JP6664368B2/ja
Anticipated expiration legal-status Critical
Priority to US15/851,554 priority patent/US10610976B2/en
Priority to JP2018071290A priority patent/JP6706280B2/ja
Ceased legal-status Critical Current

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    • H—ELECTRICITY
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0227—Rods, wires
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/3013—Au as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
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    • B23K35/302—Cu as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
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    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
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Definitions

  • the Pd coating layer may include a region of a single Pd layer, and a region where Pd and Cu have a concentration gradient in the depth direction of the wire.
  • the reason why the region having the concentration gradient is formed in the Pd coating layer is that Pd and Cu atoms may be diffused by heat treatment or the like in the manufacturing process.
  • the concentration gradient means that the degree of concentration change in the depth direction is 10 mol% or more per 0.1 ⁇ m.
  • the Pd coating layer may contain inevitable impurities.
  • the bonding wire can be obtained by manufacturing a Cu alloy used as a core material, then processing it into a wire shape, forming a Pd coating layer and an Au layer, and performing a heat treatment. In some cases, after forming the Pd coating layer and the Au layer, wire drawing and heat treatment are performed again.
  • the production method of the Cu alloy core material, the Pd coating layer, the formation method of the alloy skin layer containing Au and Pd, and the heat treatment method will be described in detail.
  • the EBSD method has the feature that the crystal orientation of the observation surface can be observed, and the angle difference of the crystal orientation between adjacent measurement points can be illustrated. Even a thin wire such as a bonding wire is relatively simple and accurate. The crystal orientation can be observed.
  • the particle size measurement can be obtained by using the analysis software provided in the apparatus for the measurement result by the EBSD method.
  • the crystal grain size defined in the present invention is an arithmetic average of equivalent diameters of crystal grains included in the measurement region (diameter of circle corresponding to crystal grain area; equivalent circle diameter).

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Wire Bonding (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
PCT/JP2015/070861 2015-06-15 2015-07-22 半導体装置用ボンディングワイヤ Ceased WO2016203659A1 (ja)

Priority Applications (38)

Application Number Priority Date Filing Date Title
US15/107,421 US10137534B2 (en) 2015-06-15 2015-07-22 Bonding wire for semiconductor device
EP15866375.7A EP3131113B1 (en) 2015-06-15 2015-07-22 Bonding wire for semiconductor device
CN201580002424.4A CN106489199B (zh) 2015-06-15 2015-07-22 半导体装置用接合线
DE112015004422.1T DE112015004422B4 (de) 2015-06-15 2015-07-22 Bonddraht für Halbleitervorrichtung
SG11201604432SA SG11201604432SA (en) 2015-06-15 2015-07-22 Bonding wire for semiconductor device
JP2015552702A JP5912008B1 (ja) 2015-06-15 2015-07-22 半導体装置用ボンディングワイヤ
KR1020167029046A KR20180008245A (ko) 2015-06-15 2015-07-22 반도체 장치용 본딩 와이어
KR1020167010922A KR101670209B1 (ko) 2015-06-15 2015-07-22 반도체 장치용 본딩 와이어
US15/515,508 US10414002B2 (en) 2015-06-15 2016-05-19 Bonding wire for semiconductor device
EP18154972.6A EP3349246B1 (en) 2015-06-15 2016-05-19 Bonding wire for semiconductor device
KR1020187034354A KR20180129987A (ko) 2015-06-15 2016-05-19 반도체 장치용 본딩 와이어
CN201680002657.9A CN106688086A (zh) 2015-06-15 2016-05-19 半导体装置用接合线
PCT/JP2016/064926 WO2016203899A1 (ja) 2015-06-15 2016-05-19 半導体装置用ボンディングワイヤ
KR1020177024954A KR101925236B1 (ko) 2015-06-15 2016-05-19 반도체 장치용 본딩 와이어
DE112016000133.9T DE112016000133B4 (de) 2015-06-15 2016-05-19 Bonddraht für Halbleitervorrichtung
CN201711344468.2A CN107962313B (zh) 2015-06-15 2016-05-19 半导体装置用接合线
CN202110317355.3A CN113078134A (zh) 2015-06-15 2016-05-19 半导体装置用接合线
KR1020177005522A KR101777995B1 (ko) 2015-06-15 2016-05-19 반도체 장치용 본딩 와이어
JP2016533746A JP5985127B1 (ja) 2015-06-15 2016-05-19 半導体装置用ボンディングワイヤ
EP16811374.4A EP3282473B1 (en) 2015-06-15 2016-05-19 Bonding wire for semiconductor device
DE112016002674.9T DE112016002674B3 (de) 2015-06-15 2016-05-19 Bonddraht für Halbleitervorrichtung
TW105116514A TWI567211B (zh) 2015-06-15 2016-05-26 Connection lines for semiconductor devices
TW107104291A TWI715824B (zh) 2015-06-15 2016-05-26 半導體裝置用接合線
TW105137924A TWI618802B (zh) 2015-06-15 2016-05-26 半導體裝置用接合線
PH12016501076A PH12016501076B1 (en) 2015-06-15 2016-06-06 Bonding wire for semiconductor device
CN201680027572.6A CN107533992B (zh) 2015-06-15 2016-06-14 半导体装置用接合线
TW107122893A TWI763878B (zh) 2015-06-15 2016-06-14 半導體裝置用接合線
TW105118619A TWI631227B (zh) 2015-06-15 2016-06-14 半導體裝置用接合線
KR1020177032781A KR101910762B1 (ko) 2015-06-15 2016-06-14 반도체 장치용 본딩 와이어
JP2017525235A JP6321297B2 (ja) 2015-06-15 2016-06-14 半導体装置用ボンディングワイヤ
DE112016002703.6T DE112016002703B4 (de) 2015-06-15 2016-06-14 Bonddraht für Halbleiterbauelement
PCT/JP2016/067624 WO2016204138A1 (ja) 2015-06-15 2016-06-14 半導体装置用ボンディングワイヤ
US15/577,735 US10737356B2 (en) 2015-06-15 2016-06-14 Bonding wire for semiconductor device
KR1020187029699A KR20180115363A (ko) 2015-06-15 2016-06-14 반도체 장치용 본딩 와이어
JP2016151318A JP6254649B2 (ja) 2015-06-15 2016-08-01 半導体装置用ボンディングワイヤ
JP2017228996A JP6664368B2 (ja) 2015-06-15 2017-11-29 半導体装置用ボンディングワイヤ
US15/851,554 US10610976B2 (en) 2015-06-15 2017-12-21 Bonding wire for semiconductor device
JP2018071290A JP6706280B2 (ja) 2015-06-15 2018-04-03 半導体装置用ボンディングワイヤ

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