WO2013140745A1 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- WO2013140745A1 WO2013140745A1 PCT/JP2013/001591 JP2013001591W WO2013140745A1 WO 2013140745 A1 WO2013140745 A1 WO 2013140745A1 JP 2013001591 W JP2013001591 W JP 2013001591W WO 2013140745 A1 WO2013140745 A1 WO 2013140745A1
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- copper wire
- electrode pad
- copper
- semiconductor device
- semiconductor element
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Definitions
- the present invention relates to a semiconductor device and a manufacturing method thereof.
- Patent Document 1 describes a semiconductor device in which a copper-aluminum-based intermetallic compound is formed at a bonding interface between a wire and an electrode in a semiconductor device in which an electrode and a lead of a semiconductor element are connected and led out with a copper bonding wire.
- a copper-aluminum-based intermetallic compound is formed at a bonding interface between a wire and an electrode in a semiconductor device in which an electrode and a lead of a semiconductor element are connected and led out with a copper bonding wire.
- the CuAl 2 layer is formed at the interface between the copper ball and the aluminum electrode, the copper ball and the electrode are brought into close contact with each other, so that the reliability is improved in terms of corrosion resistance and the like. It is said that.
- the present invention has been made in view of the above circumstances, and by suppressing the diffusion of copper from the copper wire toward the joint between the copper wire and the electrode pad, an alloy layer having a higher Cu composition ratio than CuAl 2 is obtained. It suppresses growth and improves connection reliability in a high temperature and high humidity environment.
- a semiconductor device in which a barrier layer containing a metal selected from palladium and platinum is formed at a junction between the copper wire and the electrode pad when heated at 200 ° C. in the atmosphere for 16 hours. .
- the copper wire includes a metal selected from palladium and platinum; The content of palladium and platinum in the joint between the copper wire and the electrode pad is 1 with respect to the content of palladium and platinum in the copper wire in a portion other than the joint between the copper wire and the electrode pad.
- a larger semiconductor device is provided.
- a semiconductor in which a barrier layer containing a metal selected from palladium and platinum is formed when a joint between a copper wire and an electrode pad is exposed to a high-temperature and high-humidity environment.
- the copper wire contains a metal selected from palladium and platinum, and the content of palladium and platinum in the copper wire in a portion other than the joint between the copper wire and the electrode pad.
- FIG. 1 is a cross-sectional view schematically showing a semiconductor device according to an embodiment. It is the figure which expanded the junction part of a copper wire and an electrode pad about the semiconductor device which concerns on embodiment.
- FIG. 1 is a cross-sectional view schematically showing a semiconductor device 10 according to the present embodiment.
- the semiconductor device 10 includes a lead frame 3 having a die pad portion 3a and an inner lead portion 3b as a substrate, the semiconductor element 1 mounted on the die pad portion 3a, and aluminum (Al) as a main component. 1, a connection terminal (inner lead portion 3 b) provided on the substrate and the electrode pad 6, a copper wire 4 mainly composed of copper (Cu), the semiconductor element 1, and And a sealing resin 5 for sealing the copper wire 4.
- this semiconductor device 10 is heated in the atmosphere at 200 ° C. for 16 hours, as shown in FIG.
- a barrier layer 7b containing a metal selected from either palladium (Pd) or platinum (Pt) is formed therebetween.
- the copper wire includes a metal selected from palladium and platinum, and the copper wire and the electrode pad with respect to the content of palladium and platinum in the copper wire in a portion other than the joint portion between the copper wire and the electrode pad.
- the content of palladium and platinum in the joint part with is greater than 1.
- the semiconductor element 1 is not particularly limited, and examples thereof include an integrated circuit, a large-scale integrated circuit, and a solid-state imaging element.
- the lead frame 3 is not particularly limited, and a circuit board may be used instead of the lead frame 3.
- a circuit board may be used instead of the lead frame 3.
- DIP Dual Inline Package
- PLCC Plastic Leaded Chip Carrier
- QFP Quad Flat Package
- LQFP Low Profile Quad Flat Package
- SOJ Small Outline ⁇ J lead package
- TSOP thin small outline package
- TQFP tape carrier package
- BGA ball grid array
- CSP Chip size ⁇ Package
- QFN Quad Flat Non-Leaded Package
- SON Small Outline Non-Leaded Package
- LF-BGA Mold Array Package It can be used a lead frame or a circuit board used in the conventional semiconductor device, such as a BGA (MAP-BGA) of Jitaipu.
- the semiconductor element 1 may be a stack of a plurality of semiconductor elements.
- the first-stage semiconductor element is bonded to the die pad portion 3a via a die bond material cured body 2 such as a film adhesive or a thermosetting adhesive.
- the semiconductor elements in the second and subsequent stages can be sequentially laminated with an insulating film adhesive or the like.
- the electrode pad 6 is previously formed in the pre-process in the appropriate place of each layer.
- the content of Al in the electrode pad 6 is preferably 98% by mass or more with respect to the entire electrode pad 6.
- components other than Al contained in the electrode pad 6 include copper (Cu) and silicon (Si).
- a general titanium-based barrier layer is formed on the surface of the underlying copper circuit terminal, and a general method for forming an electrode pad of a semiconductor element, such as vapor deposition, sputtering, or electroless plating, is applied. Can be produced.
- the copper wire 4 is used to electrically connect the lead frame 3 and the semiconductor element 1 mounted on the die pad portion 3 a of the lead frame 3.
- An oxide film is naturally or unavoidably formed on the surface of the copper wire 4 in the process.
- the copper wire 4 includes those having an oxide film formed on the surface of the wire in this way.
- the wire diameter of the copper wire 4 is 30 ⁇ m or less, more preferably 25 ⁇ m or less, and preferably 15 ⁇ m or more. If it is this range, the ball
- the copper content in the copper wire 4 is preferably 98 to 99.9% by mass, more preferably 98.5 to 99.7% by mass, more preferably 98.99% by mass. More preferably, it is 7 to 99.3% by mass.
- the copper wire 4 it is preferable to use a copper wire containing a metal selected from Pd and Pt whose diffusion rate to the electrode pad is slow, and a copper doped with a metal selected from either Pd or Pt More preferably, a wire is used. Due to Pd and Pt having a low diffusion rate to the electrode pad, Cu of the copper wire 4 can be prevented from diffusing into the electrode pad 6, and good connection reliability can be obtained.
- the total content of Pd and Pt in the copper wire 4 is preferably 0.1% by mass or more, more preferably 0.3% by mass or more, 0.5 mass% or more is still more preferable.
- the content is preferably 2% by mass or less, more preferably 1.5% by mass or less, and further preferably 1% by mass or less.
- the range of the total amount of Pd and Pt in the copper wire 4 is preferably 0.1 to 2% by mass, more preferably 0.3 to 1.5% by mass, based on the entire copper wire 4. 5 to 1% by mass is more preferable.
- Either one of Pd or Pt may be contained in the copper wire 4, and in this case, the content of Pd in the copper wire 4 is 0.5 to 1 mass% with respect to the entire copper wire 4.
- the content of Pt in the copper wire 4 is preferably 0.5 to 1% by mass with respect to the entire copper wire 4.
- the copper wire 4 can further improve the bonding strength by doping 0.001% by mass to 0.003% by mass of Ba, Ca, Sr, Be, Al or rare earth metal into copper as the core wire.
- the copper wire 4 is prepared by casting a copper alloy doped with a metal selected from Pd and Pt in a melting furnace, rolling the ingot, and further performing wire drawing using a die. What was obtained by performing heat treatment after heating while sweeping the wire can be used.
- a copper ball 4 a is formed at the tip of the copper wire 4 at the joint 7 between the copper wire 4 and the electrode pad 6.
- a CuAl alloy layer 7 a containing Cu and Al may be formed at the joint 7 between the copper wire 4 and the electrode pad 6, and when heated in the atmosphere at 200 ° C. for 16 hours, the CuAl alloy layer 7a may be formed.
- the CuAl alloy layer 7a contains various contents of Cu and Al, Cu is a main component included in the copper wire 4, and Al is a main component included in the electrode pad 6. It is.
- the CuAl alloy layer 7a is a region produced by diffusion of Al in the electrode pad 6 and Cu in the copper ball 4a by heating at the time of bonding or heat treatment after sealing, and mainly contains Cu and Al.
- mainly containing Cu and Al means that the total of the Cu content and the Al content is larger than 50 mass%, preferably 80 mass% or more, with respect to the entire CuAl alloy layer 7a. More preferably, it is 90% by mass or more, and more preferably 95% by mass or more.
- the CuAl alloy layer 7a includes a CuAl 2 layer and a layer having a higher Cu content than the CuAl 2 layer.
- the CuAl 2 layer preferably has a higher proportion in the CuAl alloy layer 7a than the layer having a high Cu content.
- the thickness of the CuAl alloy layer 7a can be set to 0.2 to 5 ⁇ m, for example.
- the barrier layer 7b is a layer containing a metal selected from either Pd or Pt, and may further contain Cu.
- the mass ratio of Pd and Pt in the barrier layer 7b is preferably 1.1 to 2 times the mass ratio of Pd and Pt in the copper wire 4, and 1.2 to 1.8 times. It is more preferable that
- the barrier layer 7b is formed in the following manner at the joint 7 between the copper wire 4 and the electrode pad 6.
- Cu having a high diffusion rate in the copper wire 4 diffuses into the electrode pad 6.
- the metal selected from either Pd or Pt having a low diffusion rate in the copper wire 4 stays on the CuAl alloy layer 7a, and is gradually concentrated, and then becomes the barrier layer 7b. Thereby, it is possible to suppress Cu in the copper wire 4 from diffusing into the electrode pad 6. Further, since it inhibited from further diffusing into CuAl alloy layer 7a, the CuAl alloy layer 7a, thereby reducing the often Cu content than CuAl 2 layer layer from growing. Furthermore, it is possible to reduce disconnection caused by corrosion of the layer having a higher Cu content than the CuAl 2 layer by the halogen generated from the sealing resin 5.
- the barrier layer 7b only needs to be formed between the CuAl alloy layer 7a and the copper wire 4 when the semiconductor device 10 is heated in the atmosphere at 200 ° C. for 16 hours, and the barrier layer 7b is formed on the semiconductor device 10 in advance. It may be.
- the barrier layer 7b is formed by increasing the concentration of Pd and Pt having a slow diffusion rate in the copper wire 4, the amount of Pd and Pt remaining in the vicinity of the joint 7 after the copper wire 4 and the electrode pad 6 are joined can be increased. It becomes easy to form, or the elastic modulus at 175 ° C. of the sealing resin 5 is 500 MPa or more and 15000 MPa or less, so that it is given to the interface between the copper wire 4 and the electrode pad 6 during and after sealing. Since the movement of the copper wire 4 can be restrained moderately while reducing the stress, it is considered that the barrier layer is more easily formed by preventing breakage due to the stress of the joint portion, or a combination of both. It is done.
- the thickness of the barrier layer 7b is preferably 0.01 to 3 ⁇ m, more preferably 0.05 to 2 ⁇ m.
- the bottom surface of the bonding portion 7 is flat at the interface with the electrode pad 6.
- the contents of Pd and Pt in the joint portion 7 are higher than the contents of Pd and Pt in portions other than the joint portion 7 of the copper wire 4.
- the content of is preferably larger than 1, and more preferably 1.3 or more from the viewpoint of high-temperature storage characteristics.
- the “content of Pd and Pt in the joint 7” may be any region of the joint 7, but more preferably contains Pd and Pt in the vicinity of the interface between the copper wire 4 and the electrode pad 6. Amount.
- the copper wire 4 having a high concentration of Pd and Pt is used.
- examples include a method using a sealing resin having an elastic modulus at 175 ° C. of 500 MPa to 15000 MPa.
- the sealing resin 5 having the elastic modulus
- the movement of the copper wire 4 is appropriately restrained while reducing the stress applied to the interface between the copper wire 4 and the electrode pad 6 during and after sealing. Therefore, it is considered that the content of Pd and Pt can be increased by preventing breakage due to stress at the joint.
- the sealing resin 5 is a cured body of a curable resin, and more specifically, it is more preferable that the epoxy resin composition containing (A) an epoxy resin and (B) a curing agent is cured.
- the elastic modulus at 175 ° C. of the sealing resin 5 is preferably 500 MPa or more and 15000 MPa or less, and more preferably 800 or more and 5000 or less.
- the epoxy resin includes monomers, oligomers, and polymers in general having two or more epoxy groups in one molecule, and its molecular weight and molecular structure are not particularly limited.
- biphenyl type epoxy resin bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol type epoxy resin such as tetramethylbisphenol F type epoxy resin, stilbene type epoxy resin; novolak type epoxy resin such as phenol novolak type epoxy resin and cresol novolak type epoxy resin; Polyfunctional epoxy resins such as methane type epoxy resins and alkyl-modified triphenol methane type epoxy resins; phenol aralkyl type epoxy resins having a phenylene skeleton, phenol aralkyl types having a biphenylene skeleton Aralkyl-type epoxy resins such as poxy resins; Dihydroxynaphthalene-type epoxy resins, naphthol-type epoxy resins such as epoxy resins obtained by glycidyl etherification of dihydroxynaphthal
- Triazine nucleus-containing epoxy resins such as dicyclopentadiene-modified phenolic epoxy resins, and the like. These may be used alone or in combination of two or more.
- the biphenyl type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol type epoxy resin such as tetramethylbisphenol F type epoxy resin, and stilbene type epoxy resin preferably have crystallinity.
- the epoxy resin (A) is composed of an epoxy resin represented by the following formula (1), an epoxy resin represented by the following formula (2), and an epoxy resin represented by the following formula (3). What contains at least 1 sort (s) selected from can be used.
- Ar 1 represents a phenylene group or a naphthylene group, and when Ar 1 is a naphthylene group, the glycidyl ether group may be bonded to either the ⁇ -position or the ⁇ -position
- Ar 2 represents a phenylene group Represents one of a biphenylene group and a naphthylene group
- R 5 and R 6 each independently represent a hydrocarbon group having 1 to 10 carbon atoms
- g is an integer of 0 to 5
- h is It is an integer from 0 to 8
- n 3 represents the degree of polymerization, and the average value is from 1 to 3.
- a plurality of R 9 s each independently represent a hydrogen atom or a hydrocarbon group having 1 to 4 carbon atoms, n 5 represents a degree of polymerization, and an average value thereof is 0 to 4.
- a plurality of R 10 and R 11 each independently represents a hydrogen atom or a hydrocarbon group having 1 to 4 carbon atoms, n 6 represents a degree of polymerization, and an average value thereof is 0 to 4. is there. ]
- the content of the epoxy resin is preferably 3% by mass or more, more preferably 5% by mass or more, and further preferably 8% by mass or more with respect to the entire epoxy resin composition. By doing so, the possibility of causing wire breakage due to an increase in viscosity can be reduced. Moreover, it is preferable that it is 18 mass% or less with respect to the whole epoxy resin composition, as for content of an epoxy resin (A), it is more preferable that it is 13 mass% or less, and 11 mass% or less is further more preferable. By doing so, it is possible to reduce the possibility of causing a decrease in moisture resistance reliability due to an increase in water absorption.
- the curing agent can be roughly classified into three types, for example, a polyaddition type curing agent, a catalyst type curing agent, and a condensation type curing agent.
- polyaddition type curing agents include aliphatic polyamines such as diethylenetriamine (DETA), triethylenetetramine (TETA), and metaxylylene diamine (MXDA), diaminodiphenylmethane (DDM), and m-phenylenediamine (MPDA).
- DETA diethylenetriamine
- TETA triethylenetetramine
- MXDA metaxylylene diamine
- DDM diaminodiphenylmethane
- MPDA m-phenylenediamine
- aromatic polyamines such as diaminodiphenylsulfone (DDS), polyamine compounds including dicyandiamide (DICY), organic acid dihydrazide, and the like; alicyclics such as hexahydrophthalic anhydride (HHPA) and methyltetrahydrophthalic anhydride (MTHPA) Acid anhydrides, including acid anhydrides, trimellitic anhydride (TMA), pyromellitic anhydride (PMDA), aromatic anhydrides such as benzophenone tetracarboxylic acid (BTDA), etc .; novolac phenolic resins, polyvinylidene Phenolic resin curing agent such as phenol; polysulfide, thioester, polymercaptan compounds such as thioethers; isocyanate prepolymer, isocyanate compounds such as blocked isocyanate; and organic acids such as carboxylic acid-containing polyester resins.
- DDS diaminodiphenylsul
- catalyst-type curing agent examples include tertiary amine compounds such as benzyldimethylamine (BDMA) and 2,4,6-trisdimethylaminomethylphenol (DMP-30); 2-methylimidazole, 2-ethyl-4 -Imidazole compounds such as methylimidazole (EMI24); Lewis acids such as BF 3 complexes.
- BDMA benzyldimethylamine
- DMP-30 2,4,6-trisdimethylaminomethylphenol
- 2-methylimidazole, 2-ethyl-4 -Imidazole compounds such as methylimidazole (EMI24)
- Lewis acids such as BF 3 complexes.
- condensation type curing agent examples include a resol type phenol resin; a urea resin such as a methylol group-containing urea resin; and a melamine resin such as a methylol group-containing melamine resin.
- a phenol resin-based curing agent is preferable from the viewpoint of balance of flame resistance, moisture resistance, electrical characteristics, curability, storage stability, and the like.
- the phenol resin-based curing agent is a monomer, oligomer, or polymer in general having two or more phenolic hydroxyl groups in one molecule, and its molecular weight and molecular structure are not particularly limited.
- phenol novolak resin cresol novolak Resin, novolak type resin such as bisphenol novolac; polyfunctional phenol resin such as triphenolmethane type phenol resin; modified phenol resin such as terpene modified phenol resin and dicyclopentadiene modified phenol resin; from either phenylene skeleton or biphenylene skeleton
- Aralkyl-type resins such as phenol aralkyl resins having a selected skeleton and naphthol aralkyl resins having a skeleton selected from any of phenylene and biphenylene skeletons; bisphenol A, bisphenol F, etc.
- Bisphenol compounds and the like which may be used in combination of two or more be used one kind alone.
- (B) at least one curing agent selected from the group consisting of compounds represented by the following formula (4) can be used as the curing agent.
- Ar 3 represents a phenylene group or a naphthylene group, and when Ar 3 is a naphthylene group, the hydroxyl group may be bonded to either the ⁇ -position or the ⁇ -position, and Ar 4 represents a phenylene group or biphenylene.
- R 7 and R 8 each independently represents a hydrocarbon group having 1 to 10 carbon atoms, i is an integer of 0 to 5, and j is 0 to N is an integer of 8, n 4 represents the degree of polymerization, and the average value thereof is 1 to 3.
- the content of the curing agent in the epoxy resin composition is preferably 2% by mass or more, more preferably 3% by mass or more, and further preferably 6% by mass or more. By doing so, sufficient fluidity can be obtained.
- the content of the (B) curing agent in the epoxy resin composition is preferably 15% by mass or less, more preferably 11% by mass or less, and further preferably 8% by mass or less. . By doing so, it is possible to reduce the possibility of causing a decrease in moisture resistance reliability due to an increase in water absorption.
- the blending ratio of the epoxy resin and the phenol resin curing agent is the number of epoxy groups (EP) of all epoxy resins and the phenol of all phenol resin curing agents.
- the equivalent ratio (EP) / (OH) to the number of functional hydroxyl groups (OH) is preferably 0.8 to 1.3. When the equivalent ratio is within this range, there is little possibility of causing a decrease in the curability of the epoxy resin composition or a decrease in the physical properties of the resin cured product.
- the epoxy resin composition forming the sealing resin 5 may contain (C) a filler, and (D) a neutralizing agent or (E) a curing accelerator as necessary.
- filler those used in general epoxy resin compositions for semiconductor encapsulation can be used. Examples thereof include inorganic fillers such as fused spherical silica, fused crushed silica, crystalline silica, talc, alumina, titanium white, and silicon nitride, and organic fillers such as organosilicone powder and polyethylene powder. preferable. These fillers may be used alone or in combination of two or more.
- the shape of the filler (C) is as spherical as possible and the particle size distribution is broad in order to suppress an increase in the melt viscosity of the epoxy resin composition and further increase the filler content. Is preferred.
- the filler may be surface-treated with a coupling agent.
- the filler may be pre-treated with an epoxy resin or a phenol resin, and the treatment method includes a method of removing the solvent after mixing with a solvent, or a direct addition to the filler. In addition, there is a method of mixing using a mixer.
- the content of the filler is preferably 65% by mass or more, and 75% by mass or more with respect to the entire epoxy resin composition, from the viewpoint of the filling property of the epoxy resin composition and the reliability of the semiconductor device. More preferably, it is more preferably 80% by mass or more. By doing so, low moisture absorption and low thermal expansion can be obtained, so that the risk of insufficient moisture resistance reliability can be reduced.
- the content of the (C) filler is preferably 93% by mass or less, more preferably 91% by mass or less, and 86% by mass with respect to the entire epoxy resin composition in consideration of moldability. % Or less is more preferable. By doing so, it is possible to reduce the possibility that fluidity is lowered and poor filling or the like occurs during molding, or inconvenience such as wire flow in the semiconductor device due to high viscosity.
- the neutralizing agent an epoxy resin composition or one that neutralizes an acidic corrosive gas generated by heating the sealing resin 5 that is a cured product thereof can be used. Thereby, corrosion (oxidation degradation) of the joint portion 7 between the copper wire 4 and the electrode pad 6 of the semiconductor element 1 can be suppressed.
- the neutralizing agent (D) at least one selected from the group consisting of basic metal salts, particularly compounds containing calcium elements, compounds containing aluminum elements, and compounds containing magnesium elements may be used. it can.
- Examples of the compound containing calcium element include calcium carbonate, calcium borate, calcium metasilicate, etc.
- calcium carbonate is preferable from the viewpoint of impurity content, water resistance and low water absorption, and synthesized by a carbon dioxide reaction method. More preferred is precipitated calcium carbonate.
- Examples of the compound containing an aluminum element include aluminum hydroxide and boehmite.
- aluminum hydroxide is preferable, and low aluminum soda hydroxide synthesized by a two-stage Bayer method is more preferable.
- Examples of the compound containing magnesium element include hydrotalcite, magnesium oxide, and magnesium carbonate.
- hydrotalcite represented by the following formula (5) is preferable from the viewpoint of impurity content and low water absorption.
- M a Al b (OH) 2a + 3b-2c (CO 3 ) c ⁇ mH 2 O (5)
- M represents a metal element containing at least Mg
- a, b, and c are numbers satisfying 2 ⁇ a ⁇ 8, 1 ⁇ b ⁇ 3, and 0.5 ⁇ c ⁇ 2, respectively.
- M is an integer of 0 or more.
- hydrotalcites include Mg 6 Al 2 (OH) 16 (CO 3 ) ⁇ mH 2 O, Mg 3 ZnAl 2 (OH) 12 (CO 3 ) ⁇ mH 2 O, Mg 4.3 Al 2 ( OH) 12.6 (CO 3 ) ⁇ mH 2 O and the like.
- the content of the neutralizing agent is preferably 0.01 to 10% by mass with respect to the entire epoxy resin composition.
- the content of the neutralizing agent is preferably 0.01 to 10% by mass with respect to the entire epoxy resin composition.
- content of a neutralizing agent 0.01 mass% or more, the addition effect of a neutralizing agent can fully be exhibited, and corrosion of the junction part 7 of the copper wire 4 and the electrode pad 6 is carried out. (Oxidation degradation) can be prevented more reliably, and the high-temperature storage characteristics of the semiconductor device can be improved.
- the moisture absorption can be reduced by setting the content of the (D) neutralizing agent to 10% by mass or less, the solder crack resistance tends to be improved.
- the content thereof is 0.05 to 2% by mass with respect to the entire epoxy resin composition from the same viewpoint as described above. preferable.
- the curing accelerator is not limited as long as it promotes the crosslinking reaction between the epoxy group of the epoxy resin and the curing agent (for example, the phenolic hydroxyl group of the phenol resin-based curing agent). What is used for a composition can be used.
- diazabicycloalkenes such as 1,8-diazabicyclo (5,4,0) undecene-7 and derivatives thereof; organic phosphines such as triphenylphosphine and methyldiphenylphosphine; imidazole compounds such as 2-methylimidazole; tetra Examples include tetra-substituted phosphonium and tetra-substituted borates such as phenylphosphonium and tetraphenylborate; adducts of phosphine compounds and quinone compounds, and these may be used alone or in combination of two or more. .
- the content of the curing accelerator is preferably 0.05% by mass or more, and more preferably 0.1% by mass or more with respect to the entire epoxy resin composition. By doing so, the possibility of causing a decrease in curability can be reduced. Moreover, it is preferable that it is 1 mass% or less with respect to the whole epoxy resin composition, and, as for content of (E) hardening accelerator, it is more preferable that it is 0.5 mass% or less. By doing so, the possibility of causing a decrease in fluidity can be reduced.
- the epoxy resin composition for forming the sealing resin 5 may further include an aluminum corrosion inhibitor such as zirconium hydroxide; an inorganic ion exchanger such as bismuth oxide hydrate; and ⁇ -glycidoxypropyl.
- Coupling agents such as trimethoxysilane, 3-mercaptopropyltrimethoxysilane, and 3-aminopropyltrimethoxysilane; colorants such as carbon black and bengara; low stress components such as silicone rubber; natural waxes such as carnauba wax, synthesis Release agents such as waxes, higher fatty acids such as zinc stearate and their metal salts or paraffins; various additives such as flame retardants such as aluminum hydroxide, magnesium hydroxide, zinc borate, zinc molybdate, phosphazene, antioxidants, etc. You may mix
- the epoxy resin composition for forming the sealing resin 5 is obtained by mixing the above-described components at 15 ° C. to 28 ° C. using, for example, a mixer, and then kneading using a roll, a kneader, an extruder, etc.
- liquidity, etc. suitably can be used as needed, such as what knead
- an electrode pad 6 is formed by opening a part of the uppermost protective film 8 of the semiconductor element 1 by a known semiconductor manufacturing process.
- the protective film 8 is formed from an insulating film such as SiN.
- the semiconductor element 1 provided with the electrode pad 6 is placed on the die pad portion 3a on the lead frame 3 by a further known post-process, and the electrode pad 6 and the inner lead portion 3b are wire-bonded with the copper wire 4.
- Bonding is performed by the following procedure, for example. First, a copper ball 4a having a predetermined diameter is formed at the tip of the copper wire 4 (however, FIG. 2 shows the shape after bonding). Next, the copper ball 4 a is lowered substantially perpendicularly to the upper surface of the electrode pad 6, and ultrasonic vibration is applied while the copper ball 4 a and the electrode pad 6 are in contact with each other.
- the inner lead part 3b of the lead frame 3 and the semiconductor element 1 may be joined by a reverse bond of a wire.
- a ball formed at the tip of the copper wire 4 is first bonded to the electrode pad 6 of the semiconductor element 1, and the copper wire 4 is cut to form a stitch bonding bump.
- a ball formed at the tip of the wire is bonded to the metal-plated inner lead portion 3b of the lead frame 3, and stitch bonded to the bumps of the semiconductor element.
- the height of the wire on the semiconductor element 1 can be made lower than that in the positive bonding, so that the bonding height of the semiconductor element 1 can be reduced.
- a curable resin for example, the above-mentioned epoxy resin composition
- a conventional molding method such as a transfer mold, a compression mold, or an injection mold
- the semiconductor element 1, the copper wire 4, and the inner lead portion 3b Is sealed, and post-curing is performed at a temperature of about 80 ° C. to 200 ° C. for about 10 minutes to 24 hours.
- the post-curing is more preferably performed at 150 to 200 ° C. for 2 to 16 hours.
- the semiconductor element 1 sealed with the sealing resin 5 can be mounted on an electronic device or the like.
- the Pd and Pt contents in the joint portion 7 are larger than 1 with respect to the Pd and Pt contents in the copper wire 4. Further, when the semiconductor device 10 is heated at 200 ° C. for 16 hours in the air after the step of sealing with the sealing resin 5, the bonding portion 7 between the copper wire 4 and the electrode pad 6 is made of any one of Pd and Pt. A barrier layer 7b containing the selected metal is formed.
- the manufacturing process and use causes Cu to diffuse preferentially from the copper ball 4a to the electrode pad 6 to form a CuAl alloy layer 7a in the joint 7 and Pt, Pd in the copper ball 4a or both of them. Does not diffuse into the electrode pad 6 and remains on the CuAl alloy layer 7a. Thereby, Cu in the copper wire 4 can be prevented from further diffusing toward the CuAl alloy layer 7a, and the growth of the CuAl alloy layer 7a can be suppressed. Therefore, according to the present invention, high connection reliability is maintained even when a high temperature and high temperature process is employed after bonding or when the usage environment is at a high temperature (for example, around an engine such as an automobile). Is possible.
- the present invention relates to a semiconductor element mounted on a substrate, an electrode pad mainly formed of aluminum, provided on the semiconductor element, a connection terminal provided on the substrate, and the electrode pad.
- a copper wire having a main component, and a sealing resin for sealing the semiconductor element and the copper wire, and the total amount of palladium and platinum in the copper wire is based on the entire copper wire,
- the present invention relates to a semiconductor device of 0.1 wt% or more and 2 wt% or less.
- Epoxy resin-OCN EOCN-1020-55, Nippon Kayaku Co., Ltd., epoxy equivalent 200 Br-epoxy: EPICLON 152-S, manufactured by Dainippon Ink and Chemicals, epoxy equivalent 359 Epoxy resin-2: NC3000P, manufactured by Nippon Kayaku Co., Ltd., epoxy equivalent 276 Epoxy resin-3: YX4000K, manufactured by Mitsubishi Chemical Corporation, epoxy equivalent 185
- Curing agent-PN PR-HF-3, manufactured by Sumitomo Bakelite Co., Ltd., hydroxyl equivalent 105
- DHT-4A registered trademark
- a hydrotalcite in which a is 4.3, b is 2, and c is 1 in the above formula (5) manufactured by Kyowa Chemical Industry Co., Ltd.
- Triphenylphosphine TPP, manufactured by Hokuko Chemical Co., Ltd.
- Coupling agent ⁇ -glycidoxypropyltrimethoxysilane Colorant: Carbon black Release agent: Carnauba wax
- a test piece of 50 mm ⁇ ⁇ 3 mm was molded using a low pressure transfer molding machine (“KTS-15” manufactured by Kotaki Seiki Co., Ltd.) at a mold temperature of 175 ° C., an injection pressure of 7.5 MPa, and a curing time of 2 minutes. After post-curing at 175 ° C. for 8 hours, finely pulverized, add 50 ml of distilled water to 5 g of pulverized product, put in a Teflon (registered trademark) -lined container, treat at 125 ° C. for 20 hours, and treat the supernatant The liquid was quantified by ion chromatographic analysis.
- TEG (TEST ELEMENT GROUP) chip (3.5 mm ⁇ 3.5 mm) equipped with an aluminum electrode pad (aluminum pad with Al purity of 99.9% by mass and 1 ⁇ m thickness) is a 352-pin BGA (the substrate has a thickness of 0.56 mm, Adhesive to the die pad part of bismaleimide / triazine resin / glass cloth substrate (package size is 30mm x 30mm, thickness 1.17mm) so that aluminum electrode pad of TEG chip and electrode pad of substrate are daisy chain connected Then, wire bonding was performed using a copper wire shown in Tables 2 and 3 at a wire pitch of 80 ⁇ m.
- Pd dope 1 copper wire having a copper purity of 99.99% by mass and a Pd content of 1% by mass (diameter: 25 ⁇ m)
- Pd dope 2 Copper wire (diameter 25 ⁇ m) having a copper purity of 99.49% by mass and a Pd content of 0.5% by mass
- Pt dope copper wire with a copper purity of 99.99% by mass and a Pt content of 1% by mass (diameter: 25 ⁇ m) Bear: copper wire with a copper purity of 99.99% by mass and containing neither Pd nor Pt (diameter 25 ⁇ m)
- Pd coating Copper wire (diameter 25 ⁇ m) with a surface of copper purity 99.99 mass% coated with 50 nm of Pd
- a barrier layer could not be confirmed between the copper wire and the aluminum pad, but when analyzed by elemental analysis with a transmission electron microscope (TEM), In Examples 1 to 11, the mass ratio of Pd and Pt between the copper wire and the CuAl alloy layer is 1.02 to 1.08 times higher than the mass ratio of Pd and Pt in the copper wire. I confirmed. Further, the semiconductor devices of Examples 1 to 11 and Comparative Examples 1 to 6 were heated in the atmosphere at 200 ° C. for 16 hours, and the structure of the junction between the copper wire and the electrode pad was analyzed by TEM.
- TEM transmission electron microscope
- a barrier layer made of Cu / Pd having a thickness of 0.05 to 0.2 ⁇ m was formed between the CuAl 2 layer having a thickness of 0.3 ⁇ m and the copper wire. It was confirmed by TEM elemental analysis that the Pd mass ratio in the barrier layer increased 1.2 to 1.3 times the Pd mass ratio in the copper wire.
- a barrier layer made of Cu / Pt having a thickness of 0.1 to 0.2 ⁇ m is formed between the CuAl 2 layer having a thickness of 0.3 ⁇ m and the copper wire. It was confirmed. Elemental analysis by TEM confirmed that the Pt mass ratio in the barrier layer increased 1.2 to 1.4 times the Pt mass ratio in the copper wire.
- HAST unsaturated moisture resistance test
- HTSL high temperature storage test
- the semiconductor devices of Examples 1 to 11 and Comparative Examples 1 to 6 were subjected to HAST (unsaturated moisture resistance test) and HTSL (high temperature storage test) of the semiconductor devices.
- the results are shown in Tables 2 and 3.
- the units in Tables 2 and 3 are hours.
- HAST was performed in accordance with IEC68-2-66.
- the test conditions were such that the temperature was 130 ° C. and 140 ° C., the treatment was performed at 85% RH and an applied voltage of 20 V, and the time during which defects occurred was examined.
- HTSL was processed at 175 ° C., and the time during which defects occurred was examined.
- determination of a defect in HAST and HTSL was evaluated using ten manufactured packages, and a time when a package having a resistance value after processing with respect to an initial resistance exceeding 1.2 times was defined as a defect time.
- the doping amount of Pd or Pt is preferably 0.1 to 2% by mass, more preferably 0.3 to 1%.
- a copper wire that is 0.5% by mass or more and 0.5% by mass or more and 1% by mass or less, which is a more preferable range, stable without being influenced by the halogen amount of the epoxy resin composition forming the sealing resin It was shown that both reliability and bonding workability can be achieved.
Abstract
Description
基板に搭載された半導体素子と、
アルミニウムを主成分とし、前記半導体素子に設けられた電極パッドと、
前記基板に設けられた接続端子と前記電極パッドとを接続し、銅を主成分とする銅ワイヤと、
前記半導体素子及び前記銅ワイヤを封止する封止樹脂と、
を有し、
大気中200℃で16時間加熱したとき、前記銅ワイヤと前記電極パッドとの接合部に、パラジウム及び白金のいずれかから選択される金属を含むバリア層が形成される、半導体装置が提供される。
基板に搭載された半導体素子と、
アルミニウムを主成分とし、前記半導体素子に設けられた電極パッドと、
前記基板に設けられた接続端子と前記電極パッドとを接続し、銅を主成分とする銅ワイヤと、
前記半導体素子及び前記銅ワイヤを封止する封止樹脂と、
を有し、
前記銅ワイヤが、パラジウム及び白金のいずれかから選択される金属を含み、
前記銅ワイヤと前記電極パッドとの接合部以外の部分における前記銅ワイヤ中のパラジウム及び白金の含有量に対する、前記銅ワイヤと前記電極パッドとの前記接合部におけるパラジウム及び白金の含有量が、1より大きい、半導体装置が提供される。
銅を主成分とする銅ワイヤで前記接続端子と前記電極パッドとを接続する工程と、
前記半導体素子及び前記銅ワイヤを封止樹脂で封止する工程と、
を含み、
封止樹脂で封止する前記工程の後に、大気中200℃で16時間加熱したとき、前記銅ワイヤと前記電極パッドとの接合部に、パラジウム及び白金のいずれかから選択される金属を含むバリア層が形成される、半導体装置の製造方法が提供される。
銅ワイヤ4中のPd及びPtの含有量の合計は、銅ワイヤ4全体に対し、良好な高温保管特性の観点から、0.1質量%以上が好ましく、0.3質量%以上がより好ましく、0.5質量%以上が更に好ましい。一方、銅ワイヤ4の硬度の上昇を抑制し、ボンディング性の低下を押さえるため、2質量%以下が好ましく、1.5質量%以下がより好ましく、1質量%以下が更に好ましい。また、銅ワイヤ4中のPd及びPtの合計量の範囲は、銅ワイヤ4全体に対して、0.1~2質量%が好ましく、0.3~1.5質量%がより好ましく、0.5~1質量%が更に好ましい。
銅ワイヤ4中にPd又はPtのいずれか一方が含まれていてもよく、この場合、銅ワイヤ4中のPdの含有量が、銅ワイヤ4全体に対して0.5~1質量%であるか、又は、銅ワイヤ4中のPtの含有量が、銅ワイヤ4全体に対して0.5~1質量%であることが好ましい。前記範囲とすることで優れた信頼性とボンディング作業性を両立することができる。
なお、銅ワイヤ4にドープされたPd及びPtのいずれかから選択される金属は、Cu中に固溶した状態で存在していると推察される。
銅ワイヤ4と電極パッド6との接合部7が熱処理されることにより、銅ワイヤ4中の拡散速度の速いCuが電極パッド6に拡散する。一方、銅ワイヤ4中の拡散速度の遅いPd及びPtのいずれかから選択される金属は、CuAl合金層7a上にとどまり、次第に濃縮され、その後バリア層7bとなる。
これにより、銅ワイヤ4中のCuが電極パッド6に拡散するのを抑制できる。また、CuAl合金層7aに更に拡散するのを抑制できるため、CuAl合金層7aにおいて、CuAl2層よりもCu含有量が多い層が成長するのを低減できる。更に、CuAl2層よりもCu含有量が多い層が、封止樹脂5から発生するハロゲンにより腐食することによって生じる断線を、低減することが可能となる。
銅ワイヤ4中の拡散速度の遅いPd及びPtの濃度を高くすることにより、銅ワイヤ4と電極パッド6との接合後、接合部7付近にとどまるPd及びPtの量を増加できバリア層7bが形成されやすくなること、または、封止樹脂5の175℃の弾性率が500MPa以上15000MPa以下であることにより、封止の際及び封止後において、銅ワイヤ4と電極パッド6との界面に与えるストレスを低減しつつ銅ワイヤ4の動きを適度に拘束することができるため、接合部の応力による破壊を防止して一層バリア層が形成されやすくなること、または両者の組み合わせによる等の理由が考えられる。
なお、前記ビフェニル型エポキシ樹脂、ビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、テトラメチルビスフェノールF型エポキシ樹脂等のビスフェノール型エポキシ樹脂、スチルベン型エポキシ樹脂は結晶性を有するものが好ましい。
MaAlb(OH)2a+3b-2c(CO3)c・mH2O (5)
〔式(5)中、Mは少なくともMgを含む金属元素を表し、a、b、cは、それぞれ2≦a≦8、1≦b≦3、0.5≦c≦2を満たす数であり、mは0以上の整数である。〕
まず、公知の半導体製造プロセスによって半導体素子1の最上層の保護膜8の一部を開口して電極パッド6を形成する。保護膜8はSiN等の絶縁膜から形成される。次いで、更に公知の後工程プロセスにより電極パッド6を備えた半導体素子1をリードフレーム3上のダイパッド部3aに設置し、銅ワイヤ4により電極パッド6とインナーリード部3bとをワイヤボンディングする。
表1に示す各成分をミキサーを用いて15~28℃で混合し、次いで70℃~100℃でロール混練した。冷却後、粉砕してエポキシ樹脂組成物を得た。なお、表1中、各成分の詳細は下記のとおりである。また、表1中の単位は、質量%である。
エポキシ樹脂-OCN:EOCN-1020-55、日本化薬株式会社製、エポキシ当量200
Br化エポキシ:EPICLON 152-S、大日本インキ化学工業株式会社製、エポキシ当量359
エポキシ樹脂-2:NC3000P、日本化薬株式会社製、エポキシ当量276
エポキシ樹脂-3:YX4000K、三菱化学株式会社製、エポキシ当量185
硬化剤-PN:PR-HF-3、住友ベークライト株式会社製、水酸基当量105
溶融球状シリカ:FB-820、電気化学工業株式会社製、平均粒径26.5μm、105μm以上の粒子1%以下
ハイドロタルサイト:DHT-4A(登録商標)(上記式(5)において、aが4.3であり、bが2であり、cが1であるハイドロタルサイト)、協和化学工業株式会社製
トリフェニルホスフィン:TPP、北興化学工業株式会社製
カップリング剤:γ-グリシドキプロピルトリメトキシシラン
着色剤:カーボンブラック
離型剤:カルナバワックス
低圧トランスファー成形機(コータキ精機株式会社製「KTS-15」)を用いて、EMMI-1-66に準じたスパイラルフロー測定用の金型に、金型温度175℃、注入圧力6.9MPa、硬化時間120秒の条件で、製造例1~4のエポキシ樹脂組成物をそれぞれ注入し、流動長(単位:cm)を測定した。
175℃に加熱した熱板上で製造例1~4のエポキシ樹脂組成物をそれぞれ溶融後、へらで練りながら硬化するまでの時間(秒)を測定した。
金型温度175℃、注入圧力7.5MPa、硬化時間2分で低圧トランスファー成型機(コータキ精機株式会社製「KTS-15」)を用いて50mmφ×3mmの試験片を成形した。175℃、8時間の後硬化の後に微粉砕し、5gの粉砕品に50mlの蒸留水を加え、テフロン(登録商標)ライニングした容器に入れ、125℃20時間の処理を行い、処理後の上澄み液をイオンクロマトグラフ分析により定量を行った。
アルミニウム製電極パッド(Al純度99.9質量%、厚み1μmのアルミニウムパッド)を備えるTEG(TEST ELEMENT GROUP)チップ(3.5mm×3.5mm)を352ピンBGA(基板は厚さ0.56mm、ビスマレイミド・トリアジン樹脂/ガラスクロス基板、パッケージサイズは30mm×30mm、厚さ1.17mm)のダイパッド部に接着し、TEGチップのアルミニウム製電極パッドと基板の電極パッドとをデイジーチェーン接続となるように、表2、3に示す銅ワイヤを用いてワイヤピッチ80μmでワイヤボンディングした。これを、低圧トランスファー成形機(TOWA製「Yシリーズ」)を用いて、金型温度175℃、注入圧力6.9MPa、硬化時間2分の条件で、表2、3に示すように製造例1~5のいずれかのエポキシ樹脂組成物を用いて封止成形して、352ピンBGAパッケージを作製した。このパッケージを175℃、4時間の条件で後硬化した後、半導体装置を得た。
Pdドープ1:銅純度98.99質量%、Pd含有量1質量%の銅ワイヤ(径25μm)
Pdドープ2:銅純度99.49質量%、Pd含有量0.5質量%の銅ワイヤ(径25μm)
Ptドープ:銅純度98.99質量%、Pt含有量1質量%の銅ワイヤ(径25μm)
ベア:銅純度99.99質量%、Pd及びPtのいずれも含まない銅ワイヤ(径25μm)
Pd被覆:銅純度99.99質量%の表面にPdを50nm被覆した銅ワイヤ(径25μm)
実施例1~11及び比較例1~6の半導体装置について、銅ワイヤと電極パッドとの接合部の構造を透過型電子顕微鏡(TEM)で解析した。
実施例1~11、比較例1~6の半導体装置では、銅ワイヤとアルミニウムパッドとの間に、厚み0.3μmのCuAl2層のみからなるCuAl合金層が形成されていることを確認した。
実施例1~11、比較例1~6の半導体装置では、銅ワイヤとアルミニウムパッドとの間に、バリア層は確認できなかったが、透過型電子顕微鏡(TEM)の元素分析で解析したところ、実施例1~11では、銅ワイヤ中のPd、Ptの質量割合に対し、銅ワイヤとCuAl合金層との間のPd、Ptの質量割合が、1.02~1.08倍に高くなっていることを確認した。
また、実施例1~11及び比較例1~6の半導体装置を200℃16時間大気中で加熱し、銅ワイヤと電極パッドとの接合部の構造をTEMで解析したところ、実施例1~6、11の半導体装置では、厚み0.3μmのCuAl2層と銅ワイヤとの間に、厚み0.05~0.2μmのCu/Pdからなるバリア層が形成されていることを確認した。なお、TEMの元素分析で、該バリア層中のPd質量割合が銅ワイヤ中のPd質量割合に対し、1.2~1.3倍に増加していることを確認した。
また、実施例7~10の半導体装置では、厚み0.3μmのCuAl2層と銅ワイヤとの間に、厚み0.1~0.2μmのCu/Ptからなるバリア層が形成されていることを確認した。TEMの元素分析で、該バリア層中のPt質量割合が銅ワイヤ中のPt質量割合に対し、1.2~1.4倍に増加していることを確認した。
また、比較例1~6の半導体装置では、銅ワイヤとアルミニウムパッドとの間に形成されたCuAl2層の厚みが0.4μmとなり、CuAl2層と銅ワイヤとの間に、更に厚み0.1μmのCu9Al4層が形成されていることを確認した。銅ワイヤにドープせず、表面に被覆しただけでは、大気中200℃で16時間加熱したときバリア層が形成されないことがわかった。
実施例1~11、比較例1~6の半導体装置について半導体装置のHAST(不飽和耐湿性試験)及びHTSL(高温保管試験)を行った。その結果を表2、3に示す。表2、3中単位は、時間(hour)である。
具体的には、HASTは、IEC68-2-66に準拠して実施した。試験条件は、温度を130℃、および140℃とし、85%RH、印加電圧20Vで処理し、不良が発生する時間を調べた。
また、HTSLは、175℃で処理し、不良が発生する時間を調べた。
なお、HAST及びHTSLにおいて不良の判定は、作製したパッケージ10個を用いて評価し、初期抵抗に対する処理後の抵抗値が1.2倍を超えたパッケージが発生した時間を不良時間とした。
Claims (8)
- 基板に搭載された半導体素子と、
アルミニウムを主成分とし、前記半導体素子に設けられた電極パッドと、
前記基板に設けられた接続端子と前記電極パッドとを接続し、銅を主成分とする銅ワイヤと、
前記半導体素子及び前記銅ワイヤを封止する封止樹脂と、
を有し、
大気中200℃で16時間加熱したとき、前記銅ワイヤと前記電極パッドとの接合部に、パラジウム及び白金のいずれかから選択される金属を含むバリア層が形成される、半導体装置。 - 大気中200℃で16時間加熱したとき形成される前記バリア層の厚みが0.01~3μmである、請求項1に記載の半導体装置。
- 大気中200℃で16時間加熱したとき、前記バリア層と前記電極パッドとの間に、銅及びアルミニウムの合金層が形成されている、請求項1または2に記載の半導体装置。
- 基板に搭載された半導体素子と、
アルミニウムを主成分とし、前記半導体素子に設けられた電極パッドと、
前記基板に設けられた接続端子と前記電極パッドとを接続し、銅を主成分とする銅ワイヤと、
前記半導体素子及び前記銅ワイヤを封止する封止樹脂と、
を有し、
前記銅ワイヤが、パラジウム及び白金のいずれかから選択される金属を含み、
前記銅ワイヤ中のパラジウム及び白金の含有量に対する、前記銅ワイヤと前記電極パッドとの接合部におけるパラジウム及び白金の含有量が、1より大きい、半導体装置。 - 前記銅ワイヤ中の銅含有量が、前記銅ワイヤ全体に対して98~99.9質量%である、請求項1乃至4いずれか一項に記載の半導体装置。
- 前記基板が、リードフレーム又は回路基板である、請求項1乃至5いずれか一項に記載の半導体装置。
- アルミニウムを主成分とする電極パッドが設けられた半導体素子を、接続端子が設けられた基板に搭載する工程と、
銅を主成分とする銅ワイヤで前記接続端子と前記電極パッドとを接続する工程と、
前記半導体素子及び前記銅ワイヤを封止樹脂で封止する工程と、
を含み、
封止樹脂で封止する前記工程の後に、大気中200℃で16時間加熱したとき、前記銅ワイヤと前記電極パッドとの接合部に、パラジウム及び白金のいずれかから選択される金属を含むバリア層が形成される、半導体装置の製造方法。 - 前記封止樹脂で封止する前記工程において、エポキシ樹脂組成物を用いて封止成形させた後、150℃~200℃で2~16時間、後硬化させる、請求項7に記載の半導体装置の製造方法。
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JP6354467B2 (ja) * | 2014-09-01 | 2018-07-11 | 株式会社デンソー | 半導体装置 |
JP6641899B2 (ja) * | 2015-11-04 | 2020-02-05 | セイコーエプソン株式会社 | 物理量センサー、物理量センサーデバイス、電子機器および移動体 |
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