TWM442579U - Long-term storage bonding wire for semiconductor - Google Patents

Long-term storage bonding wire for semiconductor Download PDF

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Publication number
TWM442579U
TWM442579U TW101212065U TW101212065U TWM442579U TW M442579 U TWM442579 U TW M442579U TW 101212065 U TW101212065 U TW 101212065U TW 101212065 U TW101212065 U TW 101212065U TW M442579 U TWM442579 U TW M442579U
Authority
TW
Taiwan
Prior art keywords
long
wire
copper
semiconductor
term storage
Prior art date
Application number
TW101212065U
Other languages
Chinese (zh)
Inventor
Fu-Te Chen
Yen-Jan Chen
Yu-Hsien Tsai
Original Assignee
Feng Ching Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Feng Ching Metal Corp filed Critical Feng Ching Metal Corp
Priority to TW101212065U priority Critical patent/TWM442579U/en
Publication of TWM442579U publication Critical patent/TWM442579U/en

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/521Structures or relative sizes of bond wires
    • H10W72/522Multilayered bond wires, e.g. having a coating concentric around a core

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  • Wire Bonding (AREA)

Description

M442579 五、新型說明: 【新型所屬之技術領域】 ‘種可長效保存的半 本創作是關於一種半導體用銲線, 導體用銲線。 ’ ’疋· 【先前技術】 習知之半導體用銲線,大多採用 度高及延展性佳等特點。然而,隨著國際門^具有穩定性高、導電 斷提高,於是半導體封«者開始尋“:二的上澡,生產成本不 是改用銅打線製程。鋼具有更高 代方案,目前最佳的方式乃 佳’然而最大的問題在於銅容易氧化。氧導=度較 另一方面,易 繼續使用,造成材料的浪 _度跟導電度,因此會降低產品的良率:二^導體封裝内的 氣化的特性使其不易保存;一旦氧化則益法 費。 ’”、 【新型内容】 47舰種可長效保存的半導翻銲線,其在—銅芯材外面 W抗械包覆層,阻絕了 3材與外在環境的接觸,以防止其氧化。 本創作-實施例之—種可長效保存辭導體用銲線,包含:一怒 材,係由銅為主成分構成;以及-抗氧化包覆層,其係包f芯材,用 以阻絕4材與存放環境的接觸以防止其氧化,其中抗氧化鼻之主 成分包含非金屬材料。 a 以下錯由具體實施例配合所附的圖式詳加說明,當更容易瞭解本 3 M442579 創作之目的、技術内容、特點及其所達成之功效 【實施方式】 請參考圖1,圖1為本創作一實施例之可長效保存的半導體 橫截面不意圖。,創作-實施例之可長效保存的半導體用鲜線-一 芯材1以及:抗氧化包覆層2。其中芯材i係由銅為主成分構成^ 化包覆層2係包覆芯材卜用以阻絕芯材’碌 防止其氧化,其主成分包含非金屬材料。+衣兄的接觸以 β請繼=參考圖i,根據本發明之一實施例,製造銅鲜線的第— 疋先製造芯材卜其將銅塊材進行伸線加工至適當線徑後 ^ ^驟。其中,芯材i之材料係採用4Ν以上純度之銅塊材,且不 曰曰銅、知銅或多晶銅。可以理解的是,芯材i除了主成分的鋼之外從 更可包含卜则卿範圍的銦,、碎、銻,、鐵、錯 磷中至少其中一種的材料。 螺&' 豕接上述《〜、材i的線把加工至75_ ==才i最終的伸線加工線徑可依客製化訂作,加工 以下的特疋線徑’例如5()μιη或25μιη等等。 再者,當所有的加工過程結束,於芯材1之外表面會塗佈-声5叫 :下==層2 ’用以隔絕芯材1與外界環境的空氣接觸二 ,vr;,r - „ 抗虱化包覆層2的材料更包含親銅元素,以 使抗乳化包M 2能夠更緊密的結合銅芯材卜 -般1=本:與先她_之保存日娜_,如表所示,於 延長至2的保存時間約—週;加上抗氧化包覆層的銅線,可 外在環⑽=因此’ #由抗氧化包覆層2之覆蓋,阻絕芯材1與 外麵_綱,可確實有效延長其保存期限。 4 M442579M442579 V. New description: [New technical field] ‘A kind of semi-stainable preservation. This creation is about a welding wire for semiconductors and a bonding wire for conductors. ’ 疋 【 先前 先前 先前 【 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体However, with the high stability and high electrical resistance of the international gates, the semiconductor seals began to look for: the second shower, the production cost is not changed to the copper wire-making process. Steel has a higher generation scheme, the best at present The way is good. However, the biggest problem is that copper is easily oxidized. The oxygen conductivity is easier to use on the other hand, causing the wave and conductivity of the material, thus reducing the yield of the product: The characteristics of gasification make it difficult to store; once oxidized, the cost of the method is reduced. '", [New content] 47 semi-conducting welding wire for long-lasting preservation, the W-resistant coating on the outside of the copper core material It prevents the contact between the 3 materials and the external environment to prevent oxidation. The present invention is a long-lasting wire for the preservation of conductors, comprising: an anger material consisting of copper as a main component; and an anti-oxidation coating layer, which is a f core material for blocking The material of the material is in contact with the storage environment to prevent oxidation thereof, wherein the main component of the anti-oxidation nose comprises a non-metallic material. a The following is explained in detail by the specific embodiment in conjunction with the attached drawings. It is easier to understand the purpose, technical content, features and functions achieved by the 3 M442579. [Implementation] Please refer to Figure 1, Figure 1 The semiconductor cross-section that can be preserved for a long time in one embodiment of the present invention is not intended. In the creation-example, the fresh wire for semiconductors, which can be stored for a long time, is a core material 1 and an oxidation resistant coating layer 2. The core material i is composed of copper as a main component, and the core layer is coated with a core material to prevent the core material from being oxidized, and its main component contains a non-metal material. + The contact of the brother is followed by β. Referring to Figure i, according to an embodiment of the present invention, the first core of the copper fresh wire is manufactured, and the core material is stretched to the appropriate wire diameter. ^ Among them, the material of the core material i is a copper block having a purity of 4 Ν or more, and is not copper, copper or polycrystalline copper. It is to be understood that the core material i may further contain at least one of indium, pulverized, ruthenium, iron, and phosphorus in the Buzeqing range in addition to the steel of the main component. Screw & ' 豕 上述 〜 〜 材 材 材 材 材 材 材 材 材 材 材 材 材 材 材 材 材 材 材 材 材 材 材 材 材 材 材 材 材 材 材 材 材 材 材 材 材 材 材 材 材 材 材 材 材 材 材 材 材Or 25μιη and so on. Furthermore, when all the processing ends, the outer surface of the core material 1 will be coated with a sound 5: lower == layer 2' to insulate the core material 1 from the air of the external environment, vr;, r - „ The material of the anti-cracking coating 2 further contains a pro-copper element, so that the anti-emulsification package M 2 can bind the copper core material more closely - the general 1 = this: with her first _ save the day _, as shown As shown, the storage time is extended to about 2 weeks; the copper wire of the anti-oxidation coating layer is added, and the outer ring (10) can be covered by the anti-oxidation coating layer 2, and the core material 1 and the outer layer are blocked. Face _, can effectively extend the shelf life. 4 M442579

保存時間 (天數)Save time (days)

本創作與先麵術之鉢時間比較表 種可長效保存的半導體用銲線,其在 層,阻絕了芯材與外在環境的接觸, 综合上述’本創作提供了一種可 一銅芯材外面包覆一抗氧化包覆層, 以防止其氧化。如此’藉由抗氧化包制的保護,有效地提升了半導 體用銲線的保存時^對於製造銲線的業者,其可更大量地批量製造 並存放,避免了線材快速氧化的問題,以節省時間及降低成本;= 半導體封裝業者或電路板設計業者^言,也降低了製程巾銲線氧化 可能性,因而降低成本的耗損並提高產品良率。 ’ 以上所述之實施例僅是為說明本創作之技術思想及特點,其 在使熟習此項技藝之人士能夠瞭解本創作之内容並據以實施,ς ^ 以之限定本創作之專利範圍,即大凡依本創作所揭示之精神所二不啤 等變化或修飾,仍應涵蓋在本創作之專利範圍内。 之岣 5 M442579 【圖式簡單說明】 圖1為本創作一實施例之可長效保存的半導體用銲線橫截面 示意圖。 【主要元件符號說明】 1 芯材 2 抗氧化包覆層This creation compares with the time of the first-hand technique to compare the long-lasting semiconductor welding wire, which prevents the core material from contacting the external environment. The above-mentioned creation provides a copper core material. An anti-oxidation coating is coated on the outside to prevent oxidation. Thus, the protection of the anti-oxidation package effectively improves the preservation of the bonding wire for the semiconductor. For the manufacturer of the bonding wire, it can be mass-produced and stored in large quantities, thereby avoiding the problem of rapid oxidation of the wire, thereby saving. Time and cost reduction; = Semiconductor packagers or board designers have also reduced the possibility of oxidation of the process wire bond, thereby reducing cost and increasing product yield. The embodiments described above are merely illustrative of the technical spirit and features of the present invention, and are intended to enable those skilled in the art to understand the contents of the present invention and to implement them, thereby limiting the scope of the patent to the present invention. That is to say, the changes or modifications of the spirits revealed by the creation of this creation should still be covered by the scope of the patent. M 5 M442579 [Simple Description of the Drawings] Fig. 1 is a schematic cross-sectional view showing a long-lasting semiconductor wire bond for an exemplary embodiment. [Main component symbol description] 1 core material 2 anti-oxidation coating

Claims (1)

M442579 2. 3. 4. 5. 6. 8. 9. 申請專利範圍: —種可長效保存的半導體用銲線,包含: —芯材,係由銅為主成分構成;以及 -抗氡化包覆層,其係包覆該芯材,用以阻絕 =環境的接觸以防止其氧化,其中該抗氧化包二主 成分包含非金屬材料。 s之主 如請求項1所述之可長效保存的半導體用銲線, 材主成分之銅係為4N以上純度之銅。 如請求項1所述之可長效保存的半導體用銲線, 材主成分之銅係為磊晶銅、單晶銅或多晶鋼。 如請求項1所述之可長效保存的半導體用銲線, 材更包含1〜300ppm範圍的銦、鈀、坤、銻、鉍 鋅、鎳、硫、磷中至少其中一種。 ' 如明求項丨所述之可長效保存的半導體用銲線, 材之平均線徑為75μηι以下。 ,請求碩1所述之可長效保存的半導體用鮮線, 氧化包覆層包含有機物、無機物或其組合。 如請求項i所述之可長效保存的半導體°用輝線, 氧化包覆層包含親銅元素。 八中4杬 如請求項i所述之可長效保存的半導體用鲜線, 氧化包覆層為透明材質。 /、T 4抗 如請求項i所述之可長效保存的半導體用輝線, 氧化包覆層之平均厚度為5μιη以下。 ” 其中該芯 其中該芯 其中該芯 鐵、鉛、 其中該芯 其中該抗 7M442579 2. 3. 4. 5. 6. 8. 9. Patent application scope: - A long-lasting semiconductor wire for long-term storage, comprising: - a core material composed of copper as a main component; and - anti-deuteration a coating layer covering the core material for blocking contact with the environment to prevent oxidation thereof, wherein the oxidation-resistant two main component comprises a non-metal material. s mains The semiconductor wire for long-term storage as described in claim 1, the copper of the main component of the material is copper of 4N or higher purity. The copper wire for the semiconductor material which can be stored for a long time as described in claim 1, wherein the copper of the main component is epitaxial copper, single crystal copper or polycrystalline steel. The semiconductor bonding wire for long-term storage according to claim 1 further comprises at least one of indium, palladium, ruthenium, osmium, iridium zinc, nickel, sulfur and phosphorus in the range of 1 to 300 ppm. 'The wire for semiconductors that can be stored long-lasting as described in Item 丨, has an average wire diameter of 75 μηι or less. The invention relates to a fresh wire for semiconductor which can be stored for a long time as described in Shuo 1, and the oxidized coating layer comprises an organic substance, an inorganic substance or a combination thereof. The semiconductor light-emitting wire which can be stored for a long time as described in claim i, the oxidized coating layer contains a copper-binding element.八中4杬 The fresh oxide wire for long-term storage as described in claim i, the oxidized coating is a transparent material. /, T 4 resistance The semiconductor filament for long-term storage as described in claim i, the oxide coating layer has an average thickness of 5 μm or less. Wherein the core wherein the core is the core iron, lead, wherein the core is the anti-corrosion 7
TW101212065U 2012-06-22 2012-06-22 Long-term storage bonding wire for semiconductor TWM442579U (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI556337B (en) * 2015-07-24 2016-11-01 Nippon Micrometal Corp Connection lines for semiconductor devices
US10414002B2 (en) 2015-06-15 2019-09-17 Nippon Micrometal Corporation Bonding wire for semiconductor device
US10468370B2 (en) 2015-07-23 2019-11-05 Nippon Micrometal Corporation Bonding wire for semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10414002B2 (en) 2015-06-15 2019-09-17 Nippon Micrometal Corporation Bonding wire for semiconductor device
US10610976B2 (en) 2015-06-15 2020-04-07 Nippon Micrometal Corporation Bonding wire for semiconductor device
US10737356B2 (en) 2015-06-15 2020-08-11 Nippon Micrometal Corporation Bonding wire for semiconductor device
US10468370B2 (en) 2015-07-23 2019-11-05 Nippon Micrometal Corporation Bonding wire for semiconductor device
TWI556337B (en) * 2015-07-24 2016-11-01 Nippon Micrometal Corp Connection lines for semiconductor devices

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