CN203192789U - Bonding wire used for semiconductor - Google Patents

Bonding wire used for semiconductor Download PDF

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Publication number
CN203192789U
CN203192789U CN2013200608840U CN201320060884U CN203192789U CN 203192789 U CN203192789 U CN 203192789U CN 2013200608840 U CN2013200608840 U CN 2013200608840U CN 201320060884 U CN201320060884 U CN 201320060884U CN 203192789 U CN203192789 U CN 203192789U
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China
Prior art keywords
coating layer
bonding wire
nonmetal coating
copper core
semiconductor
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Expired - Fee Related
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CN2013200608840U
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Chinese (zh)
Inventor
陈福得
陈燕然
蔡玉贤
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FENG CHING METAL Corp
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FENG CHING METAL Corp
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Abstract

Provided is a bonding wire used for semiconductors. The bonding wire comprises a copper core material, a nonmetal coating layer, and a metal skin layer. The nonmetal coating layer wraps the copper core material. The metal skin layer wraps the nonmetal coating layer, wherein the nonmetal coating layer and the metal skin layer are used to isolate the copper core material from contacting with storage environment, so as to prevent the copper core material from being oxidized. Thus, by the protection of the nonmetal coating layer and the metal skin layer, hold time of the bonding wire used for semiconductors is effectively improved, loss cost is saved, and technology yield is improved.

Description

The semiconductor bonding wire
Technical field
The utility model is about a kind of semiconductor bonding wire, particularly a kind of semiconductor routing bonding wire that can long-acting preservation.
Background technology
The known semiconductor bonding wire adopts gold thread mostly, because it has that stability is high, electrical conductivity is high and characteristics such as ductility is good.Yet along with the rise of international price of gold, production cost improves constantly, so the semiconductor packages dealer begins to seek replacement scheme, best at present mode is to use copper routing technology instead.Copper has higher conductivity and the cost of material is low, and mechanical strength is preferable, yet maximum problem is the easy oxidation of copper.The routing intensity that the oxidation meeting has influence in the semiconductor packages is followed electrical conductivity, therefore can reduce the yield of product with durability.On the other hand, easily the characteristic of oxidation makes it be difficult for preserving; In case oxidation then can't continue to use causes the waste of material.Therefore, the technology of taking to plate again one deck palladium outside copper cash is arranged at present, preventing the copper cash oxidation, yet its effect is still limited.
In view of this, how to strengthen the anti-oxidation characteristics of copper-weld wire and copper palladium bonding wire etc. semiconductor bonding wire, be beneficial to copper routing technology and preserve wire rod, for needing the target of effort at present badly.
The utility model content
The utility model provides a kind of semiconductor bonding wire, via the duplicate protection of nonmetal coating layer and metal epidermal area, has promoted the holding time of semiconductor with bonding wire effectively, and has saved cost depletions, promotes the technology yield.
A kind of semiconductor bonding wire of the utility model one embodiment comprises a bronze medal core, a nonmetal coating layer and a metal epidermal area.Nonmetal coating layer coats the copper core.The metal epidermal area, it coats nonmetal coating layer, and wherein nonmetal coating layer and metal epidermal area contact to prevent its oxidation in order to what block copper core and storage environment.
Preferably, with in the bonding wire, the average line of this copper core directly is below the 75 μ m at above-mentioned semiconductor.
Preferably, with in the bonding wire, this nonmetal coating layer is a macromolecule coating layer at above-mentioned semiconductor.
Preferably, with in the bonding wire, this nonmetal coating layer presents transparence at above-mentioned semiconductor.
Preferably, with in the bonding wire, the average thickness of this nonmetal coating layer is below the 5 μ m at above-mentioned semiconductor.
Preferably, with in the bonding wire, this metal epidermal area is a palladium epidermal area at above-mentioned semiconductor.
Preferably, with in the bonding wire, the average thickness of this metal epidermal area is below the 3 μ m at above-mentioned semiconductor.
Description of drawings
Fig. 1 is the semiconductor bonding wire schematic diagram of the utility model one embodiment.
Symbol description:
1 bronze medal core
2 nonmetal coating layers
3 metal epidermal areas
Embodiment
Please refer to Fig. 1, Fig. 1 is the semiconductor bonding wire cross sectional representation of the utility model one embodiment.The semiconductor of the utility model one embodiment comprises a bronze medal core 1, a nonmetal coating layer 2 and a metal epidermal area 3 with bonding wire.Nonmetal coating layer 2, it coats copper core 1.Metal epidermal area 3 coats nonmetal coating layer 2, and wherein nonmetal coating layer 2 and metal epidermal area 3 contact to prevent its oxidation in order to what block core 1 and storage environment.
Refer again to Fig. 1, according to one embodiment of the invention, the manufacturing semiconductor is first manufactured copper core 1 with the first step of bonding wire.After earlier the copper billet material being stretched line and being machined to suitable line footpath, for the internal stress of eliminating copper core 1 and obtain good tensile property, need carry out annealing in process to copper core 1.Be understandable that the finish line of copper core 1 directly is not limited to 75 μ m, can comply with the customized work of ordering, be machined to 75 μ m following other certain line footpath, for example 50 μ m or 25 μ m etc.Copper core 1 can be made up of the copper of the above purity of 4N, and is not limited to single crystal Cu or polycrystalline copper.Be understandable that copper core 1 more can comprise the material of one of them kind in the indium, palladium, arsenic, antimony, bismuth, iron, lead, zinc, nickel, sulphur, phosphorus of 1～300ppm scope except the copper of principal component.
Accept above-mentionedly, when copper core 1 course of processing finishes, in the nonmetal coating layer 2 of outer surface coating one deck of copper core 1, contact with anti-oxidant with the air of external environment in order to isolated copper core 1 again.In an embodiment, the average thickness of nonmetal coating layer is below the 5 μ m.Nonmetal coating layer 2 can comprise organic substance, inorganic matter or its combination.In an embodiment, nonmetal coating layer 2 is a macromolecule coating layer again.With regard to outward appearance, nonmetal coating layer 2 can present transparence.The preferably, nonmetal coating layer 2 more comprises close copper material, so that nonmetal coating layer 2 can be more closely in conjunction with copper core 1.
Accept above-mentioned, coat copper cores 1 with nonmetal coating layer 2 after, again layer of metal epidermal area 3 is plated in the outside of nonmetal coating layer 2.Metal epidermal area 3 contacts to prevent its oxidation in order to what block copper core 1 and storage environment equally.In an embodiment, the average thickness of metal epidermal area 3 is below the 3 μ m.In an embodiment, metal epidermal area 3 is a palladium epidermal area again.In addition, metal epidermal area 3 more can comprise one of them kind material in platinum, ruthenium, rhodium, gold, silver, the nickel.
Table 1 is the holding time comparison sheet of the utility model and prior art bonding wire, and this sentences copper palladium line is example.It is as shown in the table, about two months of the holding time of plating palladium copper cash in general environment; And add between copper core and the palladium epidermal area after the nonmetal coating layer 2 that the holding time can extend to more than eight months.Therefore, via nonmetal coating layer 2 covering copper cores, block contacting of copper core 1 and external environment, can effectively prolong its pot-life really.
Figure BDA00002807964100031
Comprehensively above-mentioned, via the duplicate protection of nonmetal coating layer and metal epidermal area, blocked contacting of copper core and external environment, prevent the oxidation of copper core.Promoted the holding time of semiconductor with bonding wire so, effectively.For the dealer who makes bonding wire, but its greater amount ground make and deposit in batches, avoided the fast oxidative problem of wire rod, to save time and to reduce cost; For semiconductor packages dealer or board design dealer, also reduced the possibility of bonding wire oxidation in the technology, thereby the consume that reduces cost and raising product yield.
Above-described embodiment only is for technological thought of the present utility model and characteristics are described, its purpose makes the personage who has the knack of this skill can understand content of the present utility model and is implementing according to this, when can not with restriction claim of the present utility model, namely the equalization done of the spirit that discloses according to the utility model generally changes or modifies, and must be encompassed in the claim of the present utility model.

Claims (7)

1. a semiconductor bonding wire is characterized in that, comprises:
One bronze medal core;
One nonmetal coating layer, it coats this copper core; And
One metal epidermal area, it coats this nonmetal coating layer, and wherein this nonmetal coating layer and this metal epidermal area contact to prevent its oxidation in order to what block this copper core and storage environment.
2. semiconductor bonding wire as claimed in claim 1 is characterized in that, the average line of this copper core directly is below the 75 μ m.
3. semiconductor bonding wire as claimed in claim 1 is characterized in that, this nonmetal coating layer is a macromolecule coating layer.
4. semiconductor bonding wire as claimed in claim 1 is characterized in that, this nonmetal coating layer presents transparence.
5. semiconductor bonding wire as claimed in claim 1 is characterized in that, the average thickness of this nonmetal coating layer is below the 5 μ m.
6. semiconductor bonding wire as claimed in claim 1 is characterized in that, this metal epidermal area is a palladium epidermal area.
7. semiconductor bonding wire as claimed in claim 1 is characterized in that, the average thickness of this metal epidermal area is below the 3 μ m.
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Cited By (3)

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CN104835798A (en) * 2015-03-30 2015-08-12 山东科大鼎新电子科技有限公司 Antioxidation bonding copper wire and method for preparing same
CN105355616A (en) * 2015-11-20 2016-02-24 广东梅雁吉祥实业投资股份有限公司 Anti-oxidation metal product
DE112015004364B4 (en) 2015-05-26 2018-03-22 Nippon Micrometal Corporation Bonding wire for semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104835798A (en) * 2015-03-30 2015-08-12 山东科大鼎新电子科技有限公司 Antioxidation bonding copper wire and method for preparing same
CN104835798B (en) * 2015-03-30 2017-07-04 山东科大鼎新电子科技有限公司 A kind of preparation method of anti-oxidant bonding brass wire
DE112015004364B4 (en) 2015-05-26 2018-03-22 Nippon Micrometal Corporation Bonding wire for semiconductor device
US10236272B2 (en) 2015-05-26 2019-03-19 Nippon Micrometal Corporation Cu alloy core bonding wire with Pd coating for semiconductor device
US10672733B2 (en) 2015-05-26 2020-06-02 Nippon Micrometal Corporation Cu alloy core bonding wire with Pd coating for semiconductor device
CN105355616A (en) * 2015-11-20 2016-02-24 广东梅雁吉祥实业投资股份有限公司 Anti-oxidation metal product
CN105355616B (en) * 2015-11-20 2017-12-19 广东梅雁吉祥实业投资股份有限公司 A kind of anti-oxidation metal product

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