CN205406523U - OLED's lead wire electrode and OLED display - Google Patents
OLED's lead wire electrode and OLED display Download PDFInfo
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- CN205406523U CN205406523U CN201620227833.6U CN201620227833U CN205406523U CN 205406523 U CN205406523 U CN 205406523U CN 201620227833 U CN201620227833 U CN 201620227833U CN 205406523 U CN205406523 U CN 205406523U
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Abstract
The utility model discloses a OLED's lead wire electrode and OLED display, the electrode package that should go between draw together the first electrode and set up the second electrode on the first electrode, the surface of second electrode covers has anti -corrosive layer, in extreme rugged environment, still has good anti -oxidant, anti -corrosion performance, and the reliability is high, and simple process, low cost, used the OLED display of above -mentioned lead wire electrode, the reliability is high, can work under the exceedingly odious condition of moist degree, temperature, and the appearance is pleasing to the eye.
Description
Technical field
The utility model relates to display field, particularly relates to lead-in wire electrode and the OLED display of a kind of OLED.
Background technology
In recent years, OLED is as a kind of self-emitting display device, the most gradually substitute LCD and become a kind of new trend, owing to the ITO sheet resistance in OLED lead-in wire electrode is bigger, the energy loss of display device can be caused, then needing, the second electrode is set on ITO and typically uses high conductivity metal as wire, the material of the second electrode.Its operation temperature specification of vehicle-mounted OLED display is between-40 DEG C to 85 DEG C; humidity is up to 95%RH; so under exacting terms; OLED lead-in wire electrode easily corrodes; the anti-corrosion method of the lead-in wire electrode of OLED mobile unit is always a great problem in this field; anti-corrosion method commonly used in the trade is to use metal of alloying (replacement simple metal) to add coating protection; and coating make often need special material, processing procedure, equipment, and coating itself there may be reliability failures, adhesion failure, the problem such as unsightly.Therefore, the resistance to corrosion improving lead-in wire electrode itself further is the most necessary.
Utility model content
In order to solve above-mentioned the deficiencies in the prior art, the utility model provides the lead-in wire electrode of a kind of OLED, and including the first electrode and setting the second electrode on the first electrode, the outer surface of described second electrode is coated with etch resistant layer.When this lead-in wire electrode is in exceedingly odious environment, still having excellent anti-oxidant, corrosion resistance, reliability is high.
The utility model additionally provides a kind of OLED display employing above-mentioned lead-in wire electrode, this OLED display, and reliability is high, can work under conditions of humidity, high temperature etc. are exceedingly odious, and good looking appearance.
Technical problem to be solved in the utility model is achieved by the following technical programs:
The lead-in wire electrode of a kind of OLED, including the first electrode and setting the second electrode on the first electrode, the outer surface of described second electrode is coated with etch resistant layer.
Further, described first electrode is ito thin film.
Further, described etch resistant layer can also cover the outer surface at the first electrode.
Owing to lead-in wire electrode is chronically exposed in air, when humid environment degree is big, temperature height time, the second as easy as rolling off a log oxidized corrosion on lead-in wire electrode, outer surface at the second electrode of lead-in wire electrode covers one layer of etch resistant layer, second electrode can be completely cut off with outside air, slow down the oxidizing process of the second electrode.
Further, the thickness of described etch resistant layer is 1000 ~ 50000.
Further, the material of described etch resistant layer is ito film or alloy film.
In the AA district of OLED, ITO is as anode, it is desirable to its roughness meets Ra ＜ 1nm.If etch resistant layer uses ito film, the PROCESS FOR TREATMENT of " plating amorphous ITO+ etching+annealing " for the roughness of ito anode in guarantee AA district, can be used.
Further, the material of described alloy film is Cr-Cu alloy or Cu-Ni alloy or Mo-Nb alloy, but is not limited to this.
Further, described second electrode is metal electrode or many laminate electrodes, but is not limited to this.
Described metal electrode can be simple metal electrode can also be alloy electrode, it is contemplated that the resistance of alloy is big compared with simple metal, if OLED uses metal electrode, then preferably employs simple metal electrode；Many laminate electrodes are to develop on the basis of metal electrode, and anticorrosive property is more superior than metal electrode, the most preferentially uses, and can strengthen the Corrosion Protection of OLED lead-in wire electrode further.
Further, the material of described metal electrode is Cu or Ag or Al, but is not limited to this.
Further, the structure of described many laminate electrodes is Cr-Cu/Cu/Cr-Cu or Cr-Ni/Cu/Cr-Ni or Mo-Nb/Al/Mo-Nb or ITO/Ag/ITO, but is not limited to this.
A kind of OLED display, the lead-in wire of its OLED employs above-mentioned lead-in wire electrode.
The utility model has the advantages that when this lead-in wire electrode is in exceedingly odious environment, still has excellent anti-oxidant, corrosion resistance, and reliability is high, and technique is simple, with low cost.
Employing the OLED display of above-mentioned lead-in wire electrode, reliability is high, can work under conditions of wetness, temperature are exceedingly odious, and good looking appearance.
Accompanying drawing explanation
The embodiment one of the lead-in wire electrode of the OLED that Fig. 1 provides for the utility model；
The embodiment two of the lead-in wire electrode of the OLED that Fig. 2 provides for the utility model；
The embodiment three of the lead-in wire electrode of the OLED that Fig. 3 provides for the utility model；
The embodiment four of the lead-in wire electrode of the OLED that Fig. 4 provides for the utility model.
Detailed description of the invention
With embodiment, the utility model is described in detail below in conjunction with the accompanying drawings.
Embodiment one
As it is shown in figure 1, the lead-in wire electrode of a kind of OLED, including the first electrode 1 and the second electrode 2 being arranged on the first electrode 1, described first electrode 1 is ito thin film, and described second electrode 2 is metal electrode, and the outer surface of described second electrode 2 is coated with etch resistant layer 3.
2 main electric actions of the second electrode due to metal material, easily corrode under the conditions of being energized and be hot and humid, outer surface at the second electrode 2 covers one layer of etch resistant layer 3, can be completely cut off with outside air by the second electrode 2, slow down the oxide etch process of the second electrode 2.
Described second electrode 2 can be simple metal electrode can also be alloy electrode, it is contemplated that the resistance of alloy is big compared with simple metal, it is preferred to use simple metal electrode, and material can be Cu or Ag or Al, but be not limited to this.
The thickness of described etch resistant layer 3 is 1000 ~ 50000, and material is ito film or alloy film.
In the AA district of OLED, ITO is as anode, it is desirable to its roughness meets Ra ＜ 1nm.If etch resistant layer 3 uses ito film, for the roughness of ito anode in guarantee AA district, etch resistant layer 3 can use the PROCESS FOR TREATMENT of " plating amorphous ITO+ etching+annealing "；The material of described alloy film is Cr-Cu alloy or Cu-Ni alloy or Mo-Nb alloy, but is not limited to this.
Embodiment two
As shown in Figure 2, a kind of lead-in wire electrode of OLED, including the first electrode 1 and the second electrode 2 being arranged on the first electrode 1, described first electrode 1 is ito thin film, described second electrode 2 is metal electrode, the outer surface of described second electrode 2 is coated with etch resistant layer 3, and described etch resistant layer 3 also covers the outer surface at the first electrode 1.
2 main electric actions of the second electrode due to metal material, easily corrode under the conditions of being energized and be hot and humid, outer surface at the second electrode 2 covers one layer of etch resistant layer 3, can be completely cut off with outside air by the second electrode 2, slow down the oxide etch process of the second electrode 2.
Described second electrode 2 can be simple metal electrode can also be alloy electrode, it is contemplated that the resistance of alloy is big compared with simple metal, it is preferred to use simple metal electrode, and material can be Cu or Ag or Al, but be not limited to this.
The thickness of described etch resistant layer 3 is 1000 ~ 50000, and material is ito film or alloy film.
In the AA district of OLED, ITO is as anode, it is desirable to its roughness meets Ra ＜ 1nm.If etch resistant layer 3 uses ito film, for the roughness of ito anode in guarantee AA district, etch resistant layer 3 can use the PROCESS FOR TREATMENT of " plating amorphous ITO+ etching+annealing "；The material of described alloy film is Cr-Cu alloy or Cu-Ni alloy or Mo-Nb alloy, but is not limited to this.
Embodiment three
As it is shown on figure 3, the lead-in wire electrode of a kind of OLED, including the first electrode 1 and the second electrode 2 being arranged on the first electrode 1, described first electrode 1 is ito thin film, and described second electrode 2 is many laminate electrodes, and the outer surface of described second electrode 2 is coated with etch resistant layer 3.
Although the second electrode 2 uses many laminate electrodes; its CAP layer 23 has had oxidation-resistant corrosion-resistant effect to the metal level 22 making wire effect in the second electrode 2; but CAP layer 23 is utilized on metal level 22 whole and arranges ito film or alloy plating film; the method that is etched the most again and make; the dual-side making metal level 22 can not be protected, and still exposes in atmosphere；Second electrode 2 of this many laminated construction runs into the environment of extreme; for often in the vehicle-mounted OLED display in hot and humid adverse circumstances; metal level 22 on second electrode 2 also can oxidized corrode; outer surface at the second electrode 2 covers one layer of etch resistant layer 3, the metal level 22 in the second electrode 2 can be made protective effect further.
The structure of described second electrode 2 is Cr-Cu/Cu/Cr-Cu or Cr-Ni/Cu/Cr-Ni or Mo-Nb/Al/Mo-Nb or ITO/Ag/ITO, but is not limited to this.
The thickness of described etch resistant layer 3 is 1000 ~ 50000, and material is ito film or alloy film.
In the AA district of OLED, ITO is as anode, it is desirable to its roughness meets Ra ＜ 1nm.If etch resistant layer 3 uses ito film, for the roughness of ito anode in guarantee AA district, etch resistant layer 3 can use the PROCESS FOR TREATMENT of " plating amorphous ITO+ etching+annealing "；The material of described alloy film is Cr-Cu alloy or Cu-Ni alloy or Mo-Nb alloy, but is not limited to this.
Embodiment four
As shown in Figure 4, a kind of lead-in wire electrode of OLED, including the first electrode 1 and the second electrode 2 being arranged on the first electrode 1, described first electrode 1 is ito thin film, described second electrode 2 is many laminate electrodes, the outer surface of described second electrode 2 is coated with etch resistant layer 3, and described etch resistant layer 3 also covers the outer surface at the first electrode 1.
Although the second electrode 2 uses many laminate electrodes; its CAP layer 23 has had oxidation-resistant corrosion-resistant effect to the metal level 22 making wire effect in the second electrode 2; but CAP layer 23 is utilized on metal level 22 whole and arranges ito film or alloy plating film; the method that is etched the most again and make; the dual-side making metal level 22 can not be protected, and still exposes in atmosphere；Second electrode 2 of this many laminated construction runs into the environment of extreme; for often in the vehicle-mounted OLED display in hot and humid adverse circumstances; metal level 22 on second electrode 2 also can oxidized corrode; outer surface at the second electrode 2 covers one layer of etch resistant layer 3, the metal level 22 in the second electrode 2 can be made protective effect further.
The structure of described second electrode 2 is Cr-Cu/Cu/Cr-Cu or Cr-Ni/Cu/Cr-Ni or Mo-Nb/Al/Mo-Nb or ITO/Ag/ITO, but is not limited to this.
The thickness of described etch resistant layer 3 is 1000 ~ 50000, and material is ito film or alloy film.
In the AA district of OLED, ITO is as anode, it is desirable to its roughness meets Ra ＜ 1nm.If etch resistant layer 3 uses ito film, for the roughness of ito anode in guarantee AA district, etch resistant layer 3 can use the PROCESS FOR TREATMENT of " plating amorphous ITO+ etching+annealing "；The material of described alloy film is Cr-Cu alloy or Cu-Ni alloy or Mo-Nb alloy, but is not limited to this.
A kind of OLED display, the lead-in wire of its OLED employs above-mentioned lead-in wire electrode.
Embodiment described above only have expressed embodiment of the present utility model; it describes more concrete and detailed; but therefore can not be interpreted as the restriction to the utility model the scope of the claims; in every case the technical scheme using the form of equivalent or equivalent transformation to be obtained, all should fall within protection domain of the present utility model.
Claims (10)
1. a lead-in wire electrode of OLED, including the first electrode and setting the second electrode on the first electrode, it is characterised in that the outer surface of described second electrode is coated with etch resistant layer.
The lead-in wire electrode of OLED the most according to claim 1, it is characterised in that described etch resistant layer covers the outer surface at the first electrode.
The lead-in wire electrode of OLED the most according to claim 1, it is characterised in that the thickness of described etch resistant layer is 1000 ~ 50000.
The lead-in wire electrode of OLED the most according to claim 1, it is characterised in that the material of described etch resistant layer is ito film or alloy film.
The lead-in wire electrode of OLED the most according to claim 4, it is characterised in that the material of described alloy film is Cr-Cu alloy or Cu-Ni alloy or Mo-Nb alloy.
The lead-in wire electrode of OLED the most according to claim 1, it is characterised in that described second electrode is metal electrode or many laminate electrodes.
The lead-in wire electrode of OLED the most according to claim 6, it is characterised in that the material of described metal electrode is Cu or Ag or Al.
The lead-in wire electrode of OLED the most according to claim 6, it is characterised in that the structure of described many laminate electrodes is Cr-Cu/Cu/Cr-Cu or Cr-Ni/Cu/Cr-Ni or Mo-Nb/Al/Mo-Nb or ITO/Ag/ITO.
The lead-in wire electrode of OLED the most according to claim 1, it is characterised in that described first electrode is ito thin film.
10. an OLED display, it is characterised in that the lead-in wire of its OLED employs the lead-in wire electrode as described in arbitrary in claim 1-9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620227833.6U CN205406523U (en) | 2016-03-23 | 2016-03-23 | OLED's lead wire electrode and OLED display |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201620227833.6U CN205406523U (en) | 2016-03-23 | 2016-03-23 | OLED's lead wire electrode and OLED display |
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| CN205406523U true CN205406523U (en) | 2016-07-27 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020215595A1 (en) * | 2019-04-22 | 2020-10-29 | 武汉华星光电半导体显示技术有限公司 | Metal wiring film and method for manufacture thereof and thin film transistor |
| WO2023050271A1 (en) * | 2021-09-30 | 2023-04-06 | 京东方科技集团股份有限公司 | Array substrate and preparation method, display panel and preparation method, and display apparatus |
-
2016
- 2016-03-23 CN CN201620227833.6U patent/CN205406523U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020215595A1 (en) * | 2019-04-22 | 2020-10-29 | 武汉华星光电半导体显示技术有限公司 | Metal wiring film and method for manufacture thereof and thin film transistor |
| US11430815B2 (en) | 2019-04-22 | 2022-08-30 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Metal wiring film and method of fabricating thereof, thin film transistor |
| WO2023050271A1 (en) * | 2021-09-30 | 2023-04-06 | 京东方科技集团股份有限公司 | Array substrate and preparation method, display panel and preparation method, and display apparatus |
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