JP7174816B2 - 半導体装置用銅合金ボンディングワイヤ - Google Patents
半導体装置用銅合金ボンディングワイヤ Download PDFInfo
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- JP7174816B2 JP7174816B2 JP2021124400A JP2021124400A JP7174816B2 JP 7174816 B2 JP7174816 B2 JP 7174816B2 JP 2021124400 A JP2021124400 A JP 2021124400A JP 2021124400 A JP2021124400 A JP 2021124400A JP 7174816 B2 JP7174816 B2 JP 7174816B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0227—Rods, wires
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/302—Cu as the principal constituent
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- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
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Description
(1)Ni,Zn,Ga,Ge,Rh,In,Ir,Ptから選ばれる少なくとも1種以上の元素を総計で0.03質量%以上3質量%以下含有し、残部がCuと不可避不純物からなることを特徴とする半導体装置用銅合金ボンディングワイヤ。
(2)前記銅合金ボンディングワイヤのワイヤ軸に垂直方向の芯材断面における平均結晶粒径(μm)が、ワイヤの線径をR(μm)とすると、
0.02×R+0.4以上 (1a)
0.1×R+0.5以下 (1b)
であることを特徴とする(1)に記載の半導体装置用銅合金ボンディングワイヤ。
(3)ワイヤ表面の酸化銅の平均膜厚が0.0005~0.02μmの範囲であることを特徴とする(1)または(2)に記載の半導体装置用銅合金ボンディングワイヤ。
(4)前記銅合金ボンディングワイヤがさらにTi、B、P、Mg、Ca、La、As、Te、Seから選ばれる少なくとも1種以上の元素を、ワイヤ全体に対し、それぞれ0.0001~0.050質量%含有することを特徴とする(1)~(3)のいずれか1つに記載の半導体装置用銅合金ボンディングワイヤ。
(5)前記銅合金ボンディングワイヤがさらにAg、Auから選ばれる少なくとも1種以上の元素を、ワイヤ全体に対し、総計で0.0005~0.5質量%含有することを特徴とする(1)~(4)のいずれか1つに記載の半導体装置用銅合金ボンディングワイヤ。
(6)前記銅合金ボンディングワイヤがさらにPdを1.15質量%以下含有することを特徴とする(1)~(5)のいずれか1つに記載の半導体装置用銅合金ボンディングワイヤ。
(7)前記銅合金ボンディングワイヤがNi,Zn,Ga,Ge,Rh,In,Ir,Ptから選ばれる元素を2種以上含有することを特徴とする(1)~(6)のいずれか1つに記載の半導体装置用銅合金ボンディングワイヤ。
本発明の半導体装置用銅合金ボンディングワイヤ(以下、単に「ボンディングワイヤ」ともいう。)は、Ni,Zn,Ga,Ge,Rh,In,Ir,Ptから選ばれる少なくとも1種以上の元素(「第1の元素」ともいう。)を総計で0.03質量%以上3質量%以下含有し、残部がCuと不可避不純物からなる銅合金を伸線してなることを特徴とする。本発明のボンディングワイヤは、銅を主体とする合金であることから、「銅合金ボンディングワイヤ」ともいう。本発明の半導体装置用銅合金ボンディングワイヤは、銅以外の金属を主成分とする被覆層を有していないボンディングワイヤであり、「ベアCu合金ワイヤ」ともいう。本発明のボンディングワイヤは、車載用デバイスで要求される高温高湿環境でのボール接合部の接合信頼性を改善することができる。
ボンディングワイヤ中の結晶粒径がワイヤ品質に及ぼす影響について評価した。その結果、ボンディングワイヤのワイヤ軸に垂直方向の芯材断面における平均結晶粒径には好適範囲があり、平均結晶粒径(μm)が、ワイヤの線径をR(μm)としたとき、
0.02×R+0.4以上 (1a)
0.1×R+0.5以下 (1b)
であるときには、ボール接合部のつぶれ形状や、ウェッジ接合性が特に良好になることが判明した。
本発明において好ましくは、ワイヤ表面の酸化銅の平均膜厚を0.0005~0.02μmの範囲とする。第1の元素を総計で0.03~3質量%の濃度範囲で含有する銅合金ボンディングワイヤにおいて、ワイヤ表面の酸化銅の平均膜厚が0.0005~0.02μmの範囲であれば、HAST信頼性を量産レベルで安定して向上させる効果をより一層高められる。ワイヤ表面の酸化銅の膜厚が0.02μmよりも厚くなると、第1の元素を含有する銅合金からなるボンディングワイヤのボール接合部のHAST信頼性の改善効果にばらつきが生じて、HAST加熱後の接合強度等が不安定となる傾向がある。このHAST信頼性のばらつきは線径が20μm以下のボンディングワイヤでより問題となる可能性がある。第1の元素を含有する銅合金の表面の酸化銅がHAST信頼性を不安定化させる要因について、まだ不明な点もあるが、銅合金ボンディングワイヤの長手方向又はワイヤ表面から深さ方向での第1の元素の濃度分布が不均一となること、あるいは、ボール内部の侵入酸素又は残留酸化物が第1の元素のHAST信頼性の向上効果を阻害する可能性があること、等が考えられる。第1の元素を含有する銅合金ボンディングワイヤによれば表面酸化を遅らせる効果が得られるため、酸化銅の平均膜厚を薄い範囲である0.0005~0.02μmに制御することが容易である。第1の元素を総計で0.03~3質量%の濃度範囲で含有する銅合金ボンディングワイヤでは、高純度銅に比較して、20~40℃程度の低温域におけるワイヤ表面の酸化銅膜の成長を遅らせる作用を有することも確認された。
本発明のボンディングワイヤはさらにTi、B、P、Mg、Ca、La、As、Te、Seから選ばれる少なくとも1種以上の元素(「第2の元素」ともいう。)をワイヤ全体に対し、それぞれ0.0001~0.050質量%含有すると好ましい。これにより、高密度実装に要求されるボール接合部のつぶれ形状を改善、すなわちボール接合部形状の真円性を改善することができる。またこれにより、より良好なボール形状を実現することができる。第2の元素の含有量(濃度)は、ボール接合部の圧着形状を真円化させる効果を向上できるという観点から、総計で0.0001質量%以上が好ましく、0.0002質量%以上がより好ましく、0.0003質量%以上がさらに好ましい。また、ボールの硬質化を抑制してボール接合時のチップダメージを抑制する観点から、第2の元素の含有量は0.050質量%以下が好ましく、0.045質量%以下がより好ましく、0.040質量%以下がさらに好ましい。また、当該第2の元素をそれぞれ0.0005質量%以上含有することにより、ウェッジ接合部の不良発生を低減させる効果が得られるので、より好ましい。第2の元素の添加により、ワイヤが変形するときにワイヤの加工硬化を低減して、ウェッジ接合のワイヤ変形を促進する作用を高められる。詳細な機構は不明であるが、第1の元素はCu中に固溶すること、第2の元素はCu中の固溶度が小さいため析出、偏析することで、これらの元素が補完的に作用し、ウェッジ接合のワイヤ変形に、一段と優れた効果が発揮できていると考えられる。
本発明のボンディングワイヤはさらにAg、Auから選ばれる少なくとも1種以上の元素(「第3の元素」ともいう。)を総計で0.0005~0.5質量%含有すると好ましい。最近の高密度実装で要求される狭ピッチ接続では、ボール接合部の変形形状が重要であり、花弁状、偏芯等の異形を抑えて、真円化させることが求められる。第3の元素を第1の元素と併用して添加することで、ボール変形を容易に等方的にでき、圧着形状を真円化させる効果が高められる。これにより、50μm以下の狭ピッチ接続にも十分適応できることが確認された。この効果は、第3の元素含有量が総計で0.0005質量以上であればより効果的に発揮される。第3の元素の含有量は、ボール接合部の圧着形状を真円化させる効果を向上できるという観点から、総計で0.0005質量%以上が好ましく、0.0007質量%以上がより好ましく、0.001質量%以上がさらに好ましい。また、良好なFAB形状を得るという観点から、第3の元素の含有量は0.5質量%以下が好ましく、0.4質量%以下がより好ましく、0.3質量%以下がさらに好ましい。一方、第3の元素の含有量が総計で0.5質量%を超えると、FAB形状が悪化するおそれがある。ボンディングワイヤにAuを含有させると、再結晶温度が上がって、伸線加工中の動的再結晶を防ぐため加工組織が均一になり、熱処理後の結晶粒サイズが比較的均一になる。それによりワイヤの破断伸びが向上し、ボンディングした際に安定的なワイヤループを形成することができる。Auをさらに含有させる場合、ワイヤ中の第1の元素の総計が0.1質量%を超えるように含有量を定めることが好適である。本発明のボンディングワイヤは、第2の元素とともに第3の元素を含んでいていてもよいし、第2の元素に代えて、第3の元素を含有していてもよい。
本発明のボンディングワイヤはさらにPdを1.15質量%以下の範囲で含有すると好ましい。これにより、ボール接合部の高湿加熱信頼性をさらに向上できる。ボンディングワイヤ中にPdを上記濃度範囲で含有させることにより、Pdが接合界面まで拡散又は濃化して、CuとAlとの相互拡散に影響を及ぼすことで、ボール接合部接合界面に成長するCu-Al系の金属間化合物の腐食反応を遅らせると考えられる。Pdの含有量はHAST信頼性を顕著に高められるという観点から、1.15質量%以下であるのが好ましく、1.0質量%以下であるのがより好ましく、0.9質量%以下であるのがさらに好ましい。一方、Pd濃度が1.15質量%を超えると、ワイヤの常温強度・高温強度等が上昇することで、ループ形状のバラツキの発生、ウェッジ接合性の低下等が見られることがあるので、Pd含有量上限は1.15質量%とするのが好ましい。本発明のボンディングワイヤは、第2の元素及び/又は第3の元素とともにPdを含んでいてもよいし、第2の元素及び第3の元素のいずれか一方または双方に代えてPdを含んでいてもよい。
本発明の半導体装置用ボンディングワイヤの製造方法の概要について説明する。
まずサンプルの作製方法について説明する。芯材の原材料となるCuは純度が99.99質量%以上(本実施例では6N(濃度は99.9999質量%以上のもの)を使用)で残部が不可避不純物から構成されるものを用いた。第1の元素、第2の元素、第3の元素及びPdは純度が99質量%以上で残部が不可避不純物から構成されるものを用いた。ワイヤ又は芯材の組成が目的のものとなるように、芯材への添加元素である第1の元素、第2の元素、第3の元素、Pdの合金元素を調合する。各元素の添加に関しては、単体での調合も可能であるが、単体で高融点の元素や添加量が極微量である場合には、添加元素を含むCu母合金をあらかじめ作製しておいて目的の添加量となるように調合しても良い。
[元素の含有量]
ワイヤ中の各合金元素の含有量については、ICP発光分光分析装置を利用して分析した。
結晶粒径については、EBSD法で評価した。EBSD測定データの解析には専用ソフト(TSLソリューションズ製 OIM Analysis等)を利用した。結晶粒径は、測定領域内に含まれる結晶粒の相当直径(結晶粒の面積に相当する円の直径)を算術平均したものである。
ワイヤ表面の酸化銅の平均膜厚の測定には、オージェ分光分析による深さ分析を行い、ワイヤ表面のランダムな位置の最低3か所以上で測定した酸化銅の膜厚の平均値を用いた。Arイオンでスパッタしながら深さ方向に測定して、深さの単位はSiO2換算で表示した。酸素濃度が30質量%を酸化銅と金属銅の境界とする。ここでの酸素濃度とは、Cu、酸素、金属元素を総計した濃度に対する酸素濃度の比率を用いた。測定にはSAM-670(PHI社製、FE型)を用い、電子ビームの加速電圧を5kV、測定領域は10nAとし、Arイオンスパッタの加速電圧が3kV、スパッタ速度は11nm/分で測定を実施した。酸化銅の平均膜厚の測定結果を各表の「酸化銅平均膜厚」の欄に記載した。
高温高湿環境又は高温環境でのボール接合部の接合信頼性は、接合信頼性評価用のサンプルを作製し、HAST評価を行い、ボール接合部の接合寿命によって判定した。接合信頼性評価用のサンプルは、一般的な金属フレーム上のSi基板に厚さ0.8μmのAl-1.0%Si-0.5%Cuの合金を成膜して形成した電極に、市販のワイヤーボンダーを用いてボール接合を行い、市販のエポキシ樹脂によって封止して作製した。ボールはN2+5%H2ガスを流量0.4~0.6L/minで流しながら形成させ、その大きさはφ33~34μmの範囲とした。
ボール部におけるボール形成性(FAB形状)の評価は、接合を行う前のボールを採取して観察し、ボール表面の気泡の有無、本来真球であるボールの変形の有無を判定した。上記のいずれかが発生した場合は不良と判断した。ボールの形成は溶融工程での酸化を抑制するために、N2ガスを流量0.5L/minで吹き付けながら行った。ボールの直径は、ワイヤ線径の1.7倍とした。1条件に対して50個のボールを観察した。観察にはSEMを用いた。ボール形成性の評価において、不良が5個以上発生した場合には問題があると判断し×印、不良が3~4個であれば実用可能であるがやや問題有りとして△印、不良が1~2個の場合は問題ないと判断し○印、不良が発生しなかった場合には優れていると判断し◎印とし、各表の「FAB形状」の欄に表記した。×のみが不合格であり、それ以外は合格である。
ワイヤ接合部におけるウェッジ接合性の評価は、リードフレームのリード部分に1000本のボンディングを行い、接合部の剥離の発生頻度によって判定した。リードフレームは1~3μmのAgめっきを施したFe-42原子%Ni合金リードフレームを用いた。本評価では、通常よりも厳しい接合条件を想定して、ステージ温度を一般的な設定温度域よりも低い150℃に設定した。上記の評価において、不良が11個以上発生した場合には問題があると判断し×印、不良が6~10個であれば実用可能であるがやや問題有りとして△印、不良が1~5個の場合は問題ないと判断し○印、不良が発生しなかった場合には優れていると判断し◎印とし、各表の「ウェッジ接合性」の欄に表記した。×のみが不合格であり、それ以外は合格である。
ボール接合部のつぶれ形状の評価は、ボンディングを行ったボール接合部を直上から観察して、その真円性によって判定した。接合相手はSi基板上に厚さ1.0μmのAl-0.5%Cuの合金を成膜した電極を用いた。観察は光学顕微鏡を用い、1条件に対して200箇所を観察した。真円からのずれが大きい楕円状であるもの、変形に異方性を有するものはボール接合部のつぶれ形状が不良であると判断した。上記の評価において、不良が6個以上発生した場合には問題があると判断し×印、不良が4~5個であれば実用可能であるがやや問題有りとして△印、1~3個の場合は問題ないと判断し○印、全て良好な真円性が得られた場合は、特に優れていると判断し◎印とし、各表の「つぶれ形状」の欄に表記した。
表1、2に示すように、第1の元素の濃度が合計で0.03~3.0質量%の実施例1~103に係る銅合金ボンディングワイヤでは、温度が130℃、相対湿度が85%の高温高湿環境下でのHAST試験でボール接合部信頼性が得られることを確認した。
実施例10では、熱処理温度を700℃以上と高い温度としたために平均結晶粒径が好適範囲の上限超であり、その結果として、実施例10では、つぶれ形状が「△」であって若干低下する結果となった。
実施例に係るボンディングワイヤのうち、さらに、Ag、Auから選ばれる少なくとも1種以上の元素(第3の元素)を総計で0.0005~0.5質量%含有する実施例67~92に係るボンディングワイヤでは、ボール接合部のつぶれ形状が良好であった。
実施例に係るボンディングワイヤのうち、さらにPdを1.15質量%以下含有する実施例93~103に係るボンディングワイヤでは、温度が130℃、相対湿度が85%の高温高湿環境下でのHAST試験でボール接合部信頼性がさらに良好となることを確認した。
実施例に係るボンディングワイヤのうち、第1の元素に加えて、さらに、第2の元素をそれぞれ0.0001~0.050質量%、及び、Ag、Auから選ばれる少なくとも1種以上の元素(第3の元素)を総計で0.0005~0.07質量%を含有する、実施例75、76、84、85、90~92に係るボンディングワイヤでは、HAST評価結果、ウェッジ接合性、及びボール接合部のつぶれ形状がすべて良好であるという好ましい結果が得られた。なかでも第1の元素を2種類以上含む、実施例75および76ではHAST評価結果が特に良好であった。
また、実施例に係るボンディングワイヤのうち、第1の元素に加えて、さらに第2の元素をそれぞれ0.0001~0.050質量%、及び、Pdを1.15質量%以下含有する実施例98~99に係るボンディングワイヤでは、HAST評価結果がさらに良好で、FAB形状、ウェッジ接合性、及びボール接合部のつぶれ形状が良好であるという好ましい結果が得られた。
Claims (5)
- Ni,Zn,Ga,Ge,Rh,In,Ir,Ptから選ばれる少なくとも1種以上の元素を総計で0.03質量%以上3質量%以下含有し、かつ、以下の条件(i)、(ii)、(iii)の少なくとも1つを満たし、
(i)Niを含有
(ii)Znを含有
(iii)Gaを含有
P及びMgから選ばれる少なくとも1種以上の元素を、それぞれ0.0001質量%以上0.050質量%以下含有し、残部がCuと不可避不純物からなり、ベアCu合金ワイヤである、半導体装置用銅合金ボンディングワイヤ。 - Ni,Zn,Ga,Ge,Rh,In,Ir,Ptから選ばれる少なくとも1種以上の元素を総計で0.03質量%以上3質量%以下含有し、かつ、以下の条件(i)、(ii)、(iii)の少なくとも1つを満たし、
(i)Niを含有
(ii)Znを含有
(iii)Gaを含有
P及びMgから選ばれる少なくとも1種以上の元素を、それぞれ0.0001質量%以上0.050質量%以下含有し、
さらにAg、Auから選ばれる少なくとも1種以上の元素を、ワイヤ全体に対し、総計で0.0005質量%以上0.5質量%以下含有し、残部がCuと不可避不純物からなり、ベアCu合金ワイヤである、半導体装置用銅合金ボンディングワイヤ。 - Ni,Zn,Ga,Ge,Rh,In,Ir,Ptから選ばれる少なくとも1種以上の元素を総計で0.03質量%以上3質量%以下含有し、かつ、以下の条件(i)、(ii)、(iii)の少なくとも1つを満たし、
(i)Niを含有
(ii)Znを含有
(iii)Gaを含有
P及びMgから選ばれる少なくとも1種以上の元素を、それぞれ0.0001質量%以上0.050質量%以下含有し、
さらにPdを1.15質量%以下含有し、残部がCuと不可避不純物からなり、ベアCu合金ワイヤである、半導体装置用銅合金ボンディングワイヤ。 - 前記銅合金ボンディングワイヤがNi,Zn,Ga,Ge,Rh,In,Ir,Ptから選ばれる元素を2種以上含有することを特徴とする請求項1~3のいずれか1項に記載の半導体装置用銅合金ボンディングワイヤ。
- ワイヤの線径が15~50μmである、請求項1~4のいずれか1項に記載の半導体装置用銅合金ボンディングワイヤ。
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