WO2013136962A1 - 磁性材スパッタリングターゲット及びその製造方法 - Google Patents
磁性材スパッタリングターゲット及びその製造方法 Download PDFInfo
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- WO2013136962A1 WO2013136962A1 PCT/JP2013/054849 JP2013054849W WO2013136962A1 WO 2013136962 A1 WO2013136962 A1 WO 2013136962A1 JP 2013054849 W JP2013054849 W JP 2013054849W WO 2013136962 A1 WO2013136962 A1 WO 2013136962A1
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
- B22F3/14—Both compacting and sintering simultaneously
- B22F3/15—Hot isostatic pressing
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- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
- C04B35/645—Pressure sintering
- C04B35/6455—Hot isostatic pressing
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- C22C1/10—Alloys containing non-metals
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- C22C19/07—Alloys based on nickel or cobalt based on cobalt
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- C22C—ALLOYS
- C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
- C22C32/0005—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with at least one oxide and at least one of carbides, nitrides, borides or silicides as the main non-metallic constituents
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
- C22C32/001—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides
- C22C32/0015—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides with only single oxides as main non-metallic constituents
- C22C32/0021—Matrix based on noble metals, Cu or alloys thereof
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
- C22C32/001—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides
- C22C32/0015—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides with only single oxides as main non-metallic constituents
- C22C32/0026—Matrix based on Ni, Co, Cr or alloys thereof
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- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C33/00—Making ferrous alloys
- C22C33/02—Making ferrous alloys by powder metallurgy
- C22C33/0257—Making ferrous alloys by powder metallurgy characterised by the range of the alloying elements
- C22C33/0278—Making ferrous alloys by powder metallurgy characterised by the range of the alloying elements with at least one alloying element having a minimum content above 5%
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/002—Ferrous alloys, e.g. steel alloys containing In, Mg, or other elements not provided for in one single group C22C38/001 - C22C38/60
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/04—Alloys based on a platinum group metal
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/851—Coating a support with a magnetic layer by sputtering
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C2202/00—Physical properties
- C22C2202/02—Magnetic
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C27/04—Alloys based on tungsten or molybdenum
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/10—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of nickel or cobalt or alloys based thereon
Definitions
- the present invention relates to a ferromagnetic sputtering target used for forming a magnetic thin film of a magnetic recording medium, particularly a granular film of a magnetic recording medium of a hard disk adopting a perpendicular magnetic recording method, and causes the generation of particles during sputtering.
- the present invention relates to a non-magnetic material particle-dispersed ferromagnetic sputtering target capable of suppressing abnormal discharge of oxides and a method for manufacturing the same.
- a magnetron sputtering apparatus equipped with a DC power source is widely used because of high productivity.
- a substrate serving as a positive electrode and a target serving as a negative electrode are opposed to each other, and an electric field is generated by applying a high voltage between the substrate and the target in an inert gas atmosphere.
- the inert gas is ionized and a plasma composed of electrons and cations is formed.
- a plasma composed of electrons and cations is formed.
- the cations in the plasma collide with the surface of the target (negative electrode)
- atoms constituting the target are knocked out.
- the protruded atoms adhere to the opposing substrate surface to form a film.
- the principle that the material constituting the target is formed on the substrate by such a series of operations is used.
- materials based on ferromagnetic metals such as Co, Fe, or Ni are used as magnetic thin film materials for recording.
- ferromagnetic metals such as Co, Fe, or Ni are used as magnetic thin film materials for recording.
- a Co—Cr-based or Co—Cr—Pt-based ferromagnetic alloy containing Co as a main component has been used for a recording layer of a hard disk employing an in-plane magnetic recording method.
- a composite material composed of a Co—Cr—Pt ferromagnetic alloy containing Co as a main component and a non-magnetic inorganic material is often used for a recording layer of a hard disk employing a perpendicular magnetic recording method that has been put into practical use in recent years. ing.
- a magnetic thin film of a magnetic recording medium such as a hard disk is often produced by sputtering a ferromagnetic material sputtering target containing the above material as a component because of high productivity.
- a melting method or a powder metallurgy method can be considered as a method for producing such a ferromagnetic material sputtering target. Which method is used depends on the required characteristics, so it cannot be generally stated, but the sputtering target made of a ferromagnetic alloy and non-magnetic inorganic particles used for the recording layer of a perpendicular magnetic recording hard disk is Generally, it is produced by a powder metallurgy method. This is because the inorganic particles need to be uniformly dispersed in the alloy substrate, and thus it is difficult to produce by the melting method.
- Patent Document 1 An alloy powder having an alloy phase produced by a rapid solidification method and a powder constituting the ceramic phase are mechanically alloyed, and the powder constituting the ceramic phase is uniformly dispersed in the alloy powder, and then molded by hot pressing and magnetically generated.
- Patent Document 1 A method for obtaining a sputtering target for a recording medium has been proposed (Patent Document 1).
- the target structure is dispersed in a state in which the substrate is bonded in a white shape (sperm sperm) and surrounding SiO 2 (ceramics) (FIG. 2 of Patent Document 1) or in a thin string shape.
- FIG. 3 of Patent Document 1 A state (FIG. 3 of Patent Document 1) can be seen.
- Other figures are unclear, but are assumed to be similar.
- Such a structure has the problems described later and cannot be said to be a suitable sputtering target for a magnetic recording medium.
- the spherical substance shown by FIG. 4 of patent document 1 is a powder, and is not a structure
- the ferromagnetic material sputtering target can be produced by mixing by the above method and molding and sintering the mixed powder by hot pressing.
- Patent Document 2 a mixed powder obtained by mixing Co powder, Cr powder, TiO 2 powder and SiO 2 powder and Co spherical powder are mixed with a planetary motion mixer, and this mixed powder is molded by hot pressing and used for a magnetic recording medium.
- Patent Document 2 A method for obtaining a sputtering target has been proposed (Patent Document 2).
- the target structure has a spherical phase (B) in the phase (A) which is a metal substrate in which inorganic particles are uniformly dispersed (FIG. 1 of Patent Document 2).
- a spherical phase (B) in the phase (A) which is a metal substrate in which inorganic particles are uniformly dispersed FIG. 1 of Patent Document 2.
- Such a structure is good in terms of improving leakage magnetic flux, but cannot be said to be a suitable sputtering target for a magnetic recording medium from the viewpoint of suppressing generation of particles during sputtering.
- Patent Document 3 Also proposed is a method of obtaining a sputtering target for forming a magnetic recording medium thin film by mixing Co—Cr binary alloy powder, Pt powder, and SiO 2 powder and hot-pressing the obtained mixed powder.
- the target structure in this case is not shown in the figure, but a Pt phase, a SiO 2 phase and a Co—Cr binary alloy phase can be seen, and a diffusion layer can be observed around the Co—Cr binary alloy layer. It is described.
- Such a structure is not a suitable sputtering target for magnetic recording media.
- Patent Document 4 proposes a perpendicular magnetic recording medium having SiC and SiOx (x: 1 to 2).
- Patent Document 5 describes a magnetic material target containing Co, Pt, a first metal oxide, a second metal oxide, and a third metal oxide.
- Patent Document 6 proposes a sputtering target composed of a matrix phase of Co and Pt and a metal oxide phase having an average particle size of 0.05 ⁇ m or more and less than 7.0 ⁇ m, which suppresses the growth of crystal grains and has a low Proposals have been made to increase the film formation efficiency by obtaining a magnetic permeability and high density target.
- Patent Document 7 discloses a material made of Co, Fe as a main component as a ferromagnetic material and selected from oxides, nitrides, carbides, and silicides, and has a shape of a non-magnetic material (smaller than a virtual circle having a radius of 2 ⁇ m). The non-magnetic material particle dispersion type ferromagnetic material sputtering target is specified.
- Patent Document 8 discloses a non-magnetic material particle-dispersed ferromagnetic sputtering target in which non-magnetic material particles made of an oxide smaller than a virtual circle having a radius of 1 ⁇ m are dispersed in a Co—Cr alloy ferromagnetic material. And a sputtering target whose particle diameter is finely defined.
- Patent Document 9 describes a magnetic film having a granular structure.
- the flying height of the magnetic head is decreasing year by year as the recording density of the HDD increases. For this reason, the size and the number of particles allowed on the magnetic recording medium are becoming stricter. It is known that many of the particles generated during the formation of the granular film are target-derived oxides. As one method for suppressing such particle generation, it is considered effective to finely disperse the oxide in the target in the matrix alloy.
- Patent Document 10 discloses that the average particle diameter of particles formed by the metal oxide phase is 0.05 ⁇ m or more and less than 7.0 ⁇ m
- Patent Document 11 discloses that the major axis particle diameter of the ceramic phase is 10 ⁇ m or less.
- the oxygen-containing substance or oxide phase is 50 ⁇ m or less
- Patent Document 13 the average particle diameter of the particles formed by the oxide phase is 3 ⁇ m or less.
- silica particles or titania particles In the cross section perpendicular to the main surface of the sputtering target, silica particles or titania particles have a particle diameter in a direction perpendicular to the main surface of the sputtering target as Dn, and a particle diameter in a direction parallel to the main surface as Dp.
- Patent Document 15 describes that 2 ⁇ Dp / Dn is satisfied, and that chromium oxide aggregates are 500 / mm 2 .
- Patent Document 16 discloses that a Co-based alloy sputtering target containing silica, Cr, or Pt has a silica phase in the range of 0.5 to 5 ⁇ m and is manufactured using hydrophobic silica powder.
- Reference 17 discloses a sputtering target for manufacturing a magnetic recording medium, in which the oxide particle size is 10 ⁇ m or less, and Patent Document 18 discloses a matrix average in a Co—Cr—Pt—C based sputtering target.
- Patent Document 19 discloses a magnetic recording medium in which a crystal grain size is 50 ⁇ m or less and carbides are dispersed in a structure, and crystal grains constituting a magnetic thin film are separated by a crystal grain boundary including a non-ferromagnetic nonmetallic phase. Is described. However, the conditions for making these particles fine are not sufficient, and the present situation is that further improvements are required.
- an object of the present invention is to suppress the abnormal discharge of oxides and reduce the generation of particles during sputtering caused by the abnormal discharge.
- the present inventors have conducted intensive research. As a result, by adjusting the structure (oxide particle) structure of the target, abnormal discharge due to oxide during sputtering does not occur, It was found that a target with less occurrence can be obtained.
- a magnetic material sputtering target containing an oxide, having an average particle diameter of 400 nm or less, and an oxide structure having an aspect ratio of a rectangle circumscribing the oxide particles so that the area is minimized to 2 or less The magnetic material sputtering target according to any one of 1) to 3), wherein the magnetic material sputtering target has a phase A having a phase B and a phase B in which an average particle diameter of an oxide surrounding the phase A is 2 ⁇ m or less.
- one or more elements selected from B, Ti, V, Mn, Zr, Nb, Ru, Mo, Ta, W, Ag, Au, Cu, and C are contained in an amount of 0.5 mol% to 20 mol%.
- the oxide raw material contains 1 to 20 mol% of oxide of one or more components selected from B, Si, Cr, Ti, Ta, W, Al, Mg, Mn, Ca, Zr, and Y.
- a method of manufacturing a magnetic material sputtering target containing an oxide comprising depositing a magnetic material on a substrate by PVD or CVD, then removing the substrate from the deposited magnetic material,
- a method for producing a magnetic material sputtering target containing an oxide characterized in that the raw material is pulverized to obtain a raw material for a target and further sintered.
- a method of manufacturing a magnetic material sputtering target containing an oxide comprising depositing a magnetic material on a substrate by PVD or CVD, then removing the substrate from the deposited magnetic material, A method for producing an oxide-containing magnetic material sputtering target, characterized by pulverizing this into a raw material for the target, further supplementing and mixing components lacking in the raw material, and sintering the mixture.
- the manufacturing method of the magnetic material sputtering target containing an oxide comprising depositing a magnetic material on a substrate by PVD or CVD, then removing the substrate from the deposited magnetic material.
- a method for producing a magnetic material sputtering target containing an oxide wherein a magnetic material is formed on a substrate by PVD or CVD, and then the substrate is removed from the formed magnetic material, and further obtained.
- HIP hot isostatic pressing
- HIP hot isostatic pressing
- the manufacturing method of the magnetic material sputtering target containing the oxide characterized by doing.
- the structure of the ferromagnetic material sputtering target, particularly the shape of the oxide particles can be adjusted (miniaturized) to reduce the contamination of impurities from the pulverizer and media. Abnormal discharge does not occur, and the generation of particles can be reduced. Therefore, when the target of the present invention is used, a stable discharge can be obtained when sputtering with a magnetron sputtering apparatus. Furthermore, it has an excellent effect of suppressing the abnormal discharge of the oxide, reducing the generation of particles during sputtering caused by the abnormal discharge, and obtaining the cost improvement effect by improving the yield.
- FIG. 1 is a diagram (photograph) showing the structure of a Co—Pt—Cr—SiO 2 —TiO 2 —Cr 2 O 3 target of Example 1.
- FIG. 3 is a diagram (photograph) showing the structure of a Co—Pt—Cr—SiO 2 —TiO 2 —Cr 2 O 3 target of Comparative Example 1.
- FIG. 6 is a diagram (photograph) showing the structure of a Co—Pt—Ru—Cr—SiO 2 —TiO 2 —CoO target in Example 2.
- FIG. 6 is a diagram (photograph) showing the structure of a Co—Pt—Ru—Cr—SiO 2 —TiO 2 —CoO target of Comparative Example 2.
- FIG. 1 is a diagram (photograph) showing the structure of a Co—Pt—Cr—SiO 2 —TiO 2 —Cr 2 O 3 target of Example 1.
- FIG. 3 is a diagram (photograph) showing
- FIG. 6 is a diagram (photograph) showing the structure of a Co—Cr—TiO 2 target in Example 5.
- FIG. 6 is a view (photograph) showing the structure of a Co—Pt—SiO 2 —TiO 2 —Cr 2 O 3 target of Example 6.
- FIG. FIG. 5 is a diagram showing a state in which a large oxide phase B is present at the grain boundary of the oxide phase A in the Co—Pt—Ru—Cr—SiO 2 —TiO 2 —CoO-based target of Example 2 (photograph) ).
- FIG. 6 is an explanatory diagram showing a state in which a large oxide phase B exists at the grain boundary of an oxide phase A in the Co—Pt—Ru—Cr—SiO 2 —TiO 2 —CoO-based target of Example 2. .
- a sputtering target for perpendicular magnetic recording is generally manufactured by powder sintering. In order to reduce particles, it is very effective to refine the structure of the sputtering target.
- a sputtering target for perpendicular magnetic recording is composed of a ferromagnetic metal and a non-metallic material such as oxide or carbon. In order to suppress particles during sputtering, it is necessary to disperse metal and nonmetal finely and uniformly. For this purpose, it is an effective technique to mechanically pulverize and mix the raw material powders using a powerful ball mill or the like. However, with the current mechanically pulverized and mixed method, there is a physical limit to the refinement of the structure, and the generation of particles cannot be completely eliminated.
- an ultrafine structure is realized by using a vapor deposition method instead of the conventional mechanical pulverization and mixing.
- the vapor deposition method include a PVD method (Physical Vapor Deposition) and a CVD method (Chemical Vapor Deposition).
- PVD and CVD are generally methods for producing a thin film. These methods, in principle, produce a thin film by reconstructing the material after decomposing it to the molecular level, and thus have an ultra-fine structure that far surpassed mechanical grinding and mixing. . Then, said problem is solved by manufacturing a sputtering target from the film
- the magnetic material sputtering target containing the oxide of the present invention forms a magnetic material on a substrate by the PVD method or the CVD method, then removes the substrate from the formed magnetic material, and then pulverizes it.
- the raw material for the target is then manufactured by further sintering this raw material.
- PVD methods and CVD methods it is particularly effective to peel the substrate from a thin film obtained by forming a film on the substrate by a sputtering method or a vapor deposition method to obtain a sputtering raw material.
- the material previously formed on the substrate by PVD or CVD may not match the component composition of the magnetic material sputtering target to be manufactured.
- a magnetic material having an approximate component composition is formed on the substrate in advance, and then the substrate is removed from the formed magnetic material, and this is pulverized as a target raw material.
- a magnetic material sputtering target containing an oxide can be manufactured by supplementing and mixing the insufficient components and sintering the mixture.
- the removal of the substrate after the film formation can be performed by mechanical removal, chemical dissolution removal, or a combination thereof as appropriate, and is not particularly limited. It is desirable to suppress the substrate material from being mixed into the sintering raw material after the substrate is removed. Further, even when the substrate material is approximated to a sintered material or the same material is used, the contamination of impurities can be extremely reduced. Further, as the material to be supplemented (supplemented), it is desirable to use fine particles similar to the sintering raw material, but since it becomes a small amount in the sintering raw material, it can be said that it is not greatly affected.
- the grain boundary between the deposited film pulverized powders may have a structure in which a larger oxide is dispersed than in the deposited film.
- the oxide at the grain boundary is larger than the oxide in the deposited film, it is sufficiently small compared to that of mechanically pulverized and mixed, and most of the sintered body has a fine structure. Since the influence of the large particles is reduced, it can be said that the oxide present at the grain boundary of the deposited film does not become a big problem.
- the magnetic material sputtering target containing the oxide whose average particle diameter of an oxide is 400 nm or less can be obtained.
- This is the basic target structure that can be achieved in the present invention.
- an additive element 0.5 mol% or more and 20 mol% or less of one element or more selected from B, Ti, V, Mn, Zr, Nb, Ru, Mo, Ta, W, Ag, Au, Cu, and C is contained. 1 to 20 mol% of oxide of one or more components selected from B, Si, Cr, Ti, Ta, W, Al, Mg, Mn, Ca, Zr, Y
- the above magnetic material sputtering target, the magnetic material sputtering target containing one or more inorganic materials selected from carbon, nitride, and carbide as an additive material, and the magnetic material sputtering target subjected to HIP consolidation after hot pressing Can be obtained.
- typical Cr—Co alloy-based magnetic materials, Cr—Pt—Co alloy-based magnetic materials, Pt—Co alloy-based magnetic materials, and Pt—Fe alloy-based magnetic materials as oxide-containing magnetic materials.
- the present invention is characterized in the form of oxides present in the magnetic material and the production method for obtaining this special oxide (existing form). Therefore, the present invention can be similarly applied to other component systems such as an Fe—Ni alloy-based magnetic material, an Fe—Co alloy-based magnetic material, and an Fe—Ni—Co alloy-based magnetic material. What is obtained should be easily understood.
- the present invention includes these.
- Example 1 As the metal raw material powder, Co powder with an average particle diameter of 4 ⁇ m, Cr powder with an average particle diameter of 5 ⁇ m, Pt powder with an average particle diameter of 3 ⁇ m, TiO 2 powder with an average particle diameter of 1 ⁇ m, and an average particle diameter of 0.7 ⁇ m A SiO 2 powder and a Cr 2 O 3 powder having an average particle diameter of 1 ⁇ m were prepared. These powders were weighed 2000 g with the following composition ratio. The composition is as follows. Composition: 70Co-18Pt-3Cr-4SiO 2 -2TiO 2 -3Cr 2 O 3 (mol%)
- the weighed powder was enclosed in a ball mill pot with a capacity of 10 liters together with a tungsten alloy ball as a grinding medium, and rotated and mixed for 120 hours.
- the mixed powder was filled into a carbon mold and hot-pressed in a vacuum atmosphere under the conditions of a temperature of 1050 ° C., a holding time of 2 hours, and a pressure of 30 MPa to obtain a sintered body. Further, this was cut with a lathe to obtain a disk-shaped target having a diameter of 180 mm and a thickness of 6 mm.
- this target was attached to a DC magnetron sputtering apparatus, and sputtering was performed.
- the sputtering conditions were a sputtering power of 1 kW, an Ar gas pressure of 1.5 Pa, and after performing pre-sputtering of 2 kWhr, sputtering was performed on a 6.5-inch diameter Al substrate with a target film thickness of 4000 ⁇ m.
- the substrate was peeled from this sputtered material and subjected to hot isostatic pressing (HIP).
- HIP hot isostatic pressing
- the conditions for hot isostatic pressing were a heating rate of 300 ° C./hour, a holding temperature of 950 ° C., a holding time of 2 hours, and gradually increasing the Ar gas pressure from the start of heating to 950 ° While being held at C, it was pressurized at 150 MPa. After completion of the holding, it was naturally cooled in the furnace.
- this target was cut with a lathe to obtain a disk-shaped target having a diameter of 164 mm and a thickness of 3 mm.
- a structural photograph of this target is shown in FIG.
- a Co—Pt—Cr—SiO 2 —TiO 2 —Cr 2 O 3 target having fine oxide particles having an average particle diameter of 60 nm was obtained.
- this target was bonded to a Cu backing plate having a diameter of 180 mm and a thickness of 4 mm, and then attached to a DC magnetron sputtering apparatus for sputtering.
- the sputtering conditions were a sputtering power of 1 kW, an Ar gas pressure of 1.5 Pa, and after performing pre-sputtering of 2 kWhr, a 200-second film was formed on a 4-inch diameter Si substrate at 1 kW.
- the number of particles adhering to the substrate was measured with a particle counter.
- the same sputtering conditions were performed three times.
- the average number of particles on the Si substrate at this time was 0.3 particles having a size of 0.17 ⁇ m to 0.25 ⁇ m and 0 particles having a size of 0.25 to 3.0 ⁇ m.
- the results are shown in Table 1.
- the target having such fine particles did not cause abnormal discharge due to oxide during sputtering, and the generation of particles could be reduced.
- a stable discharge was obtained when sputtering with a magnetron sputtering apparatus.
- Co powder with an average particle diameter of 4 ⁇ m, Cr powder with an average particle diameter of 5 ⁇ m, Pt powder with an average particle diameter of 3 ⁇ m, TiO 2 powder with an average particle diameter of 1 ⁇ m, and an average particle diameter of 0.7 ⁇ m A SiO 2 powder and a Cr 2 O 3 powder having an average particle diameter of 1 ⁇ m were prepared. These powders were weighed 2000 g with the following composition ratio.
- the component composition is as follows. Composition: 70Co-18Pt-3Cr-4SiO 2 -2TiO 2 -3Cr 2 O 3 (mol%)
- the weighed powder was enclosed in a ball mill pot having a capacity of 10 liters together with a tungsten alloy ball as a grinding medium, and rotated and mixed for 100 hours.
- the mixed powder was filled into a carbon mold and hot-pressed in a vacuum atmosphere under the conditions of a temperature of 1050 ° C., a holding time of 2 hours, and a pressure of 30 MPa to obtain a sintered body. Further, this was cut with a lathe to obtain a disk-shaped target having a diameter of 164 mm and a thickness of 3 mm.
- the average particle diameter of the oxide particles within the microscope visual field range was 1.3 ⁇ m.
- the structure of this target is shown in FIG. Next, this target was attached to a DC magnetron sputtering apparatus, and sputtering was performed.
- the sputtering conditions were a sputtering power of 1 kW, an Ar gas pressure of 1.5 Pa, and after performing pre-sputtering of 2 kWhr, a 200-second film was formed on a 4-inch diameter Si substrate at 1 kW. The number of particles adhering to the substrate was measured with a particle counter. The same sputtering conditions were performed three times.
- the average number of particles on the Si substrate was 10.7 particles having a size of 0.17 ⁇ m to 0.25 ⁇ m, 5.3 particles having a size of 0.25 to 3.0 ⁇ m, Increased compared to Example 1.
- the results are shown in Table 1.
- Example 2 As a metal raw material powder, Co powder with an average particle diameter of 4 ⁇ m, Cr powder with an average particle diameter of 5 ⁇ m, Pt powder with an average particle diameter of 3 ⁇ m, Ru powder with an average particle diameter of 5 ⁇ m, TiO 2 powder with an average particle diameter of 1 ⁇ m as an oxide powder, An SiO 2 powder having an average particle size of 0.7 ⁇ m and a CoO powder having an average particle size of 1 ⁇ m were prepared. These powders were weighed 2000 g with the following composition ratio.
- the component composition is as follows. Composition: 59Co-20Pt-5Ru-3Cr-5SiO 2 -2TiO 2 -6CoO (mol%)
- the weighed powder was enclosed in a ball mill pot with a capacity of 10 liters together with zirconia balls as a grinding medium, and mixed by rotating for 120 hours.
- the mixed powder was filled into a carbon mold and hot-pressed in a vacuum atmosphere under the conditions of a temperature of 1050 ° C., a holding time of 2 hours, and a pressure of 30 MPa to obtain a sintered body. Further, this was cut with a lathe to obtain a disk-shaped target having a diameter of 180 mm and a thickness of 6 mm.
- this target was attached to a DC magnetron sputtering apparatus, and sputtering was performed.
- the sputtering conditions were a sputtering power of 1 kW, an Ar gas pressure of 1.5 Pa, and after performing pre-sputtering of 2 kWhr, sputtering was performed on a 6.5-inch diameter Al substrate with a target film thickness of 1000 ⁇ m.
- the substrate was peeled off from the sputtered material, and the film was recovered.
- the membrane was pulverized to obtain a fine powder having an average particle size of 200 ⁇ m. The process from sputtering to fine pulverization recovery was repeated 4 times.
- hot isostatic pressing HIP
- the conditions for hot isostatic pressing were a temperature increase rate of 300 ° C./hour, a holding temperature of 1000 ° C., a holding time of 2 hours, and gradually increasing the Ar gas pressure from the start of the temperature increase to 1000 ° While being held at C, it was pressurized at 150 MPa. After completion of the holding, it was naturally cooled in the furnace.
- FIG. 7 (photograph) shows a state in which a large oxide phase B exists in the grain boundary of the oxide phase A in this target.
- FIG. 8 observes the structure
- this target was bonded to a Cu backing plate having a diameter of 180 mm and a thickness of 4 mm, and then attached to a DC magnetron sputtering apparatus for sputtering.
- the sputtering conditions were a sputtering power of 1 kW, an Ar gas pressure of 1.5 Pa, and after performing pre-sputtering of 2 kWhr, a 200-second film was formed on a 4-inch diameter Si substrate at 1 kW. The number of particles adhering to the substrate was measured with a particle counter. The same sputtering conditions were performed three times.
- the average number of particles on the Si substrate was 0.7 particles having a size of 0.17 ⁇ m to 0.25 ⁇ m and 0.3 particles having a size of 0.25 to 3.0 ⁇ m. It was.
- the results are shown in Table 1.
- the target having such fine particles did not cause abnormal discharge due to oxide during sputtering, and the generation of particles could be reduced.
- a stable discharge was obtained when sputtering with a magnetron sputtering apparatus.
- the component composition is as follows. Composition: 59Co-20Pt-5Ru-3Cr-5SiO 2 -2TiO 2 -6CoO (mol%)
- the weighed powder was enclosed in a ball mill pot having a capacity of 10 liters together with zirconia balls as a grinding medium, and rotated and mixed for 100 hours.
- the mixed powder was filled into a carbon mold and hot-pressed in a vacuum atmosphere under the conditions of a temperature of 1050 ° C., a holding time of 2 hours, and a pressure of 30 MPa to obtain a sintered body. Further, this was cut with a lathe to obtain a disk-shaped target having a diameter of 164 mm and a thickness of 3 mm. Further, when the structure of the target was observed, the average particle diameter of the oxide particles within the microscope visual field range was 1.6 ⁇ m.
- the target organization is shown in FIG.
- this target was bonded to a Cu backing plate having a diameter of 180 mm and a thickness of 4 mm, and then attached to a DC magnetron sputtering apparatus for sputtering.
- the sputtering conditions were a sputtering power of 1 kW, an Ar gas pressure of 1.5 Pa, and after performing pre-sputtering of 2 kWhr, a 200-second film was formed on a 4-inch diameter Si substrate at 1 kW. The number of particles adhering to the substrate was measured with a particle counter. The same sputtering conditions were performed three times.
- Example 3 As a metal raw material powder, Co powder with an average particle size of 4 ⁇ m, Cr powder with an average particle size of 5 ⁇ m, Pt powder with an average particle size of 3 ⁇ m, Ta 2 O 5 powder with an average particle size of 1 ⁇ m as an oxide powder, Average particle size of 0.7 ⁇ m SiO 2 powder was prepared. These powders were weighed 2000 g with the following composition ratio.
- the component composition is as follows. Composition: 76Co-12Pt-5Cr-5Ta 2 O 5 -2SiO 2 (mol%)
- the weighed powder was enclosed in a ball mill pot with a capacity of 10 liters together with zirconia balls as a grinding medium, and mixed by rotating for 120 hours.
- the mixed powder was filled into a carbon mold and hot-pressed in a vacuum atmosphere under the conditions of a temperature of 1050 ° C., a holding time of 2 hours, and a pressure of 30 MPa to obtain a sintered body. Further, this was cut with a lathe to obtain a disk-shaped target having a diameter of 180 mm and a thickness of 6 mm.
- this target was attached to a DC magnetron sputtering apparatus, and sputtering was performed.
- the sputtering conditions were a sputtering power of 1 kW, an Ar gas pressure of 1.5 Pa, and after performing pre-sputtering of 2 kWhr, sputtering was performed on a 6.5-inch diameter Al substrate with a target film thickness of 1000 ⁇ m.
- the substrate was peeled off from the sputtered material, and the film was recovered.
- the membrane was pulverized to obtain a fine powder having an average particle size of 100 ⁇ m. The process from sputtering to fine pulverization recovery was repeated 4 times.
- hot isostatic pressing HIP
- the conditions for hot isostatic pressing were a temperature increase rate of 300 ° C./hour, a holding temperature of 1000 ° C., a holding time of 2 hours, and gradually increasing the Ar gas pressure from the start of the temperature increase to 1000 ° While being held at C, it was pressurized at 150 MPa. After completion of the holding, it was naturally cooled in the furnace.
- this target was bonded to a Cu backing plate having a diameter of 180 mm and a thickness of 4 mm, and then attached to a DC magnetron sputtering apparatus for sputtering.
- the sputtering conditions were a sputtering power of 1 kW, an Ar gas pressure of 1.5 Pa, and after performing pre-sputtering of 2 kWhr, a 200-second film was formed on a 4-inch diameter Si substrate at 1 kW.
- the number of particles adhering to the substrate was measured with a particle counter. The same sputtering conditions were performed three times.
- the average number of particles on the Si substrate was 0.3 particles having a size of 0.17 ⁇ m to 0.25 ⁇ m and 0.3 particles having a size of 0.25 to 3.0 ⁇ m. It was.
- the results are shown in Table 1.
- the target having such fine particles did not cause abnormal discharge due to oxide during sputtering, and the generation of particles could be reduced.
- a stable discharge was obtained when sputtering with a magnetron sputtering apparatus.
- Co powder with an average particle size of 4 ⁇ m, Cr powder with an average particle size of 5 ⁇ m, Pt powder with an average particle size of 3 ⁇ m, Ta 2 O 5 powder with an average particle size of 1 ⁇ m as an oxide powder, Average particle size of 0.7 ⁇ m SiO 2 powder was prepared. These powders were weighed 2000 g with the following composition ratio.
- the component composition is as follows. Composition: 76Co-12Pt-5Cr-5Ta 2 O 5 -2SiO 2 (mol%)
- the weighed powder was enclosed in a ball mill pot having a capacity of 10 liters together with zirconia balls as a grinding medium, and rotated and mixed for 100 hours.
- the mixed powder was filled into a carbon mold and hot-pressed in a vacuum atmosphere under the conditions of a temperature of 1050 ° C., a holding time of 2 hours, and a pressure of 30 MPa to obtain a sintered body. Further, this was cut with a lathe to obtain a disk-shaped target having a diameter of 164 mm and a thickness of 3 mm. Further, when the structure of the target was observed, the average particle diameter of the oxide particles within the microscope field of view was 1 ⁇ m.
- this target was bonded to a Cu backing plate having a diameter of 180 mm and a thickness of 4 mm, and then attached to a DC magnetron sputtering apparatus for sputtering.
- the sputtering conditions were a sputtering power of 1 kW, an Ar gas pressure of 1.5 Pa, and after performing pre-sputtering of 2 kWhr, a 200-second film was formed on a 4-inch diameter Si substrate at 1 kW.
- the number of particles adhering to the substrate was measured with a particle counter.
- the same sputtering conditions were performed three times.
- the average number of particles on the Si substrate at this time was 12 particles having a size of 0.17 ⁇ m to 0.25 ⁇ m and 4.7 particles having a size of 0.25 to 3.0 ⁇ m. Increased compared to 3.
- the results are shown in Table 1.
- Example 4 As a metal raw material powder, Co powder with an average particle diameter of 4 ⁇ m, Cr powder with an average particle diameter of 5 ⁇ m, Pt powder with an average particle diameter of 3 ⁇ m, B 2 O 3 powder with an average particle diameter of 10 ⁇ m as an oxide powder, TiO with an average particle diameter of 1 ⁇ m 2 powder, average particle size 0.7 ⁇ m of SiO 2 powder were prepared CoO powder having an average particle diameter of 1 [mu] m. These powders were weighed 2000 g with the following composition ratio.
- the component composition is as follows. Composition: 70Co-10Pt-12Cr-2B 2 O 3 -3TiO 2 -2SiO 2 -1 CoO (mol%)
- this target was attached to a DC magnetron sputtering apparatus, and sputtering was performed.
- the sputtering conditions were a sputtering power of 1.2 kW and an Ar gas pressure of 1.5 Pa.
- sputtering was performed on a 6.5-inch diameter Al substrate with a target film thickness of 1000 ⁇ m.
- the substrate was peeled off from the sputtered material, and the film was recovered.
- the membrane was pulverized to obtain a fine powder having an average particle size of 250 ⁇ m. The process from sputtering to fine pulverization recovery was repeated 4 times.
- hot isostatic pressing HIP
- the conditions for hot isostatic pressing were a heating rate of 300 ° C./hour, a holding temperature of 950 ° C., a holding time of 2 hours, and gradually increasing the Ar gas pressure from the start of heating to 950 ° While being held at C, it was pressurized at 150 MPa. After completion of the holding, it was naturally cooled in the furnace.
- this target was bonded to a Cu backing plate having a diameter of 180 mm and a thickness of 4 mm, and then attached to a DC magnetron sputtering apparatus for sputtering.
- the sputtering conditions were a sputtering power of 1 kW, an Ar gas pressure of 1.5 Pa, and after performing pre-sputtering of 2 kWhr, a 200-second film was formed on a 4-inch diameter Si substrate at 1 kW. The number of particles adhering to the substrate was measured with a particle counter. The same sputtering conditions were performed three times.
- the average number of particles on the Si substrate was one particle having a size of 0.17 ⁇ m to 0.25 ⁇ m and 0.7 particles having a size of 0.25 to 3.0 ⁇ m.
- the results are shown in Table 1.
- the target having such fine particles did not cause abnormal discharge due to oxide during sputtering, and the generation of particles could be reduced.
- a stable discharge was obtained when sputtering with a magnetron sputtering apparatus.
- Co powder with an average particle diameter of 4 ⁇ m, Cr powder with an average particle diameter of 5 ⁇ m, Pt powder with an average particle diameter of 3 ⁇ m, B 2 O 3 powder with an average particle diameter of 10 ⁇ m as an oxide powder, TiO with an average particle diameter of 2 ⁇ m 2 powder, average particle size 0.7 ⁇ m of SiO 2 powder were prepared CoO powder having an average particle diameter of 1 [mu] m. These powders were weighed 2000 g with the following composition ratio.
- the component composition is as follows. Composition: 70Co-10Pt-12Cr-2B 2 O 3 -3TiO 2 -2SiO 2 -1 CoO (mol%)
- the weighed powder was enclosed in a ball mill pot having a capacity of 10 liters together with zirconia balls as a grinding medium, and rotated and mixed for 100 hours.
- the mixed powder was filled into a carbon mold and hot-pressed in a vacuum atmosphere under the conditions of a temperature of 950 ° C., a holding time of 2 hours, and a pressure of 30 MPa to obtain a sintered body. Further, this was cut with a lathe to obtain a disk-shaped target having a diameter of 164 mm and a thickness of 3 mm. Further, when the structure of the target was observed, the average particle diameter of the oxide particles within the microscope field of view was 1.8 ⁇ m.
- this target was attached to a DC magnetron sputtering apparatus, and sputtering was performed.
- the sputtering conditions were a sputtering power of 1 kW, an Ar gas pressure of 1.5 Pa, and after performing pre-sputtering of 2 kWhr, a 200-second film was formed on a 4-inch diameter Si substrate at 1 kW.
- the number of particles adhering to the substrate was measured with a particle counter.
- the same sputtering conditions were performed three times. At this time, the average number of particles on the Si substrate was 14.3 particles having a size of 0.17 ⁇ m to 0.25 ⁇ m, 3.3 particles having a size of 0.25 to 3.0 ⁇ m, Increased compared to Example 4.
- Table 1 The results are shown in Table 1.
- Example 5 A Co powder having an average particle diameter of 4 ⁇ m, a Cr powder having an average particle diameter of 5 ⁇ m were prepared as the metal raw material powder, and a TiO 2 powder having an average particle diameter of 1 ⁇ m was prepared as the oxide powder. These powders were weighed 2000 g with the following composition ratio.
- the component composition is as follows. Composition: 50Co-40Cr-10TiO 2 (mol%)
- the weighed powder was enclosed in a ball mill pot with a capacity of 10 liters together with zirconia balls as a grinding medium, and mixed by rotating for 120 hours.
- the mixed powder was filled into a carbon mold and hot-pressed in a vacuum atmosphere under the conditions of a temperature of 950 ° C., a holding time of 2 hours, and a pressure of 30 MPa to obtain a sintered body. Further, this was cut with a lathe to obtain a disk-shaped target having a diameter of 180 mm and a thickness of 6 mm.
- this target was attached to a DC magnetron sputtering apparatus, and sputtering was performed.
- the sputtering conditions were a sputtering power of 1 kW, an Ar gas pressure of 1.5 Pa, and after performing pre-sputtering of 2 kWhr, sputtering was performed on a 6.5 inch diameter SUS substrate with a target film thickness of 1000 ⁇ m.
- the substrate was peeled off from the sputtered material, and the film was recovered.
- the membrane was pulverized to obtain a fine powder having an average particle size of 50 ⁇ m. The process from sputtering to fine pulverization recovery was repeated 4 times.
- hot isostatic pressing HIP
- the conditions for hot isostatic pressing were a heating rate of 300 ° C./hour, a holding temperature of 950 ° C., a holding time of 2 hours, and gradually increasing the Ar gas pressure from the start of heating to 950 ° While being held at C, it was pressurized at 150 MPa. After completion of the holding, it was naturally cooled in the furnace.
- this target was cut with a lathe to obtain a disk-shaped target having a diameter of 164 mm and a thickness of 3 mm.
- a structural photograph of this target is shown in FIG.
- Co-40Cr-10TiO 2 based target having fine oxide particles having an average particle diameter of 70nm was obtained.
- this target was bonded to a Cu backing plate having a diameter of 180 mm and a thickness of 4 mm, and then attached to a DC magnetron sputtering apparatus for sputtering.
- the sputtering conditions were a sputtering power of 1 kW, an Ar gas pressure of 1.5 Pa, and after performing pre-sputtering of 2 kWhr, a 200-second film was formed on a 4-inch diameter Si substrate at 1 kW. The number of particles adhering to the substrate was measured with a particle counter. The same sputtering conditions were performed three times.
- the average number of particles on the Si substrate at this time was 0.3 particles having a size of 0.17 ⁇ m to 0.25 ⁇ m and 0 particles having a size of 0.25 to 3.0 ⁇ m.
- the results are shown in Table 1.
- the target having such fine particles did not cause abnormal discharge due to oxide during sputtering, and the generation of particles could be reduced.
- a stable discharge was obtained when sputtering with a magnetron sputtering apparatus.
- the weighed powder was enclosed in a ball mill pot having a capacity of 10 liters together with zirconia balls as a grinding medium, and rotated and mixed for 100 hours.
- the mixed powder was filled into a carbon mold and hot-pressed in a vacuum atmosphere under the conditions of a temperature of 950 ° C., a holding time of 2 hours, and a pressure of 30 MPa to obtain a sintered body. Further, this was cut with a lathe to obtain a disk-shaped target having a diameter of 164 mm and a thickness of 3 mm. Furthermore, when the structure
- this target was bonded to a Cu backing plate having a diameter of 180 mm and a thickness of 4 mm, and then attached to a DC magnetron sputtering apparatus for sputtering.
- the sputtering conditions were a sputtering power of 1 kW, an Ar gas pressure of 1.5 Pa, and after performing pre-sputtering of 2 kWhr, a 200-second film was formed on a 4-inch diameter Si substrate at 1 kW. The number of particles adhering to the substrate was measured with a particle counter. The same sputtering conditions were performed three times.
- the average number of particles on the Si substrate was 8.7 particles having a size of 0.17 ⁇ m to 0.25 ⁇ m, and 3 particles having a size of 0.25 to 3.0 ⁇ m. Increased compared to 5.
- the results are shown in Table 1.
- Co powder with an average particle diameter of 4 ⁇ m, Pt powder with an average particle diameter of 3 ⁇ m, as an oxide powder, SiO 2 powder with an average particle diameter of 0.7 ⁇ m, TiO 2 powder with an average particle diameter of 1 ⁇ m, and an average particle diameter of 1 ⁇ m Cr 2 O 3 powder was prepared. These powders were weighed 2000 g with the following composition ratio.
- the component composition is as follows. Composition: 72Co-20Pt-3SiO 2 -2TiO 2 -3Cr 2 O 3 (mol%)
- the weighed powder was enclosed in a ball mill pot with a capacity of 10 liters together with zirconia balls as a grinding medium, and mixed by rotating for 120 hours.
- the mixed powder was filled into a carbon mold and hot-pressed in a vacuum atmosphere under the conditions of a temperature of 1050 ° C., a holding time of 2 hours, and a pressure of 30 MPa to obtain a sintered body. Further, this was cut with a lathe to obtain a disk-shaped target having a diameter of 180 mm and a thickness of 6 mm.
- this target was attached to a DC magnetron sputtering apparatus, and sputtering was performed.
- the sputtering conditions were a sputtering power of 1 kW, an Ar gas pressure of 1.5 Pa, and after performing pre-sputtering of 2 kWhr, sputtering was performed on a 6.5-inch diameter Al substrate with a target film thickness of 4000 ⁇ m.
- the substrate was peeled from this sputtered material and subjected to hot isostatic pressing (HIP).
- HIP hot isostatic pressing
- this target was cut with a lathe to obtain a disk-shaped target having a diameter of 164 mm and a thickness of 3 mm.
- a structural photograph of this target is shown in FIG.
- a Co—Pt—SiO 2 —TiO 2 —Cr 2 O 3 target having fine oxide particles having an average particle diameter of 400 nm was obtained.
- this target was bonded to a Cu backing plate having a diameter of 180 mm and a thickness of 4 mm, and then attached to a DC magnetron sputtering apparatus for sputtering.
- the sputtering conditions were a sputtering power of 1 kW, an Ar gas pressure of 1.5 Pa, and after performing pre-sputtering of 2 kWhr, a 200-second film was formed on a 4-inch diameter Si substrate at 1 kW. The number of particles adhering to the substrate was measured with a particle counter. The same sputtering conditions were performed three times.
- the average number of particles on the Si substrate was 3 particles having a size of 0.17 ⁇ m to 0.25 ⁇ m and 1.3 particles having a size of 0.25 to 3.0 ⁇ m.
- the results are shown in Table 1.
- the target having such fine particles did not cause abnormal discharge due to oxide during sputtering, and the generation of particles could be reduced.
- a stable discharge was obtained when sputtering with a magnetron sputtering apparatus.
- the weighed powder was enclosed in a ball mill pot with a capacity of 10 liters together with zirconia balls as a grinding medium, and mixed by rotating for 120 hours.
- the mixed powder was filled into a carbon mold and hot-pressed in a vacuum atmosphere under the conditions of a temperature of 1050 ° C., a holding time of 2 hours, and a pressure of 30 MPa to obtain a sintered body. Further, this was cut with a lathe to obtain a disk-shaped target having a diameter of 180 mm and a thickness of 6 mm.
- this target was attached to a DC magnetron sputtering apparatus, and sputtering was performed.
- the sputtering conditions were a sputtering power of 1 kW, an Ar gas pressure of 1.5 Pa, and after performing pre-sputtering of 2 kWhr, sputtering was performed on a 6.5-inch diameter Al substrate with a target film thickness of 1000 ⁇ m.
- the substrate was peeled off from the sputtered material, and the film was recovered.
- the membrane was pulverized to obtain a fine powder having an average particle size of 300 ⁇ m. The process from sputtering to fine pulverization recovery was repeated 4 times.
- hot isostatic pressing HIP
- the conditions for hot isostatic pressing were a temperature increase rate of 300 ° C./hour, a holding temperature of 1000 ° C., and a holding time of 2 hours. While being held at C, it was pressurized at 150 MPa. After completion of the holding, it was naturally cooled in the furnace.
- this target was bonded to a Cu backing plate having a diameter of 180 mm and a thickness of 4 mm, and then attached to a DC magnetron sputtering apparatus for sputtering.
- the sputtering conditions were a sputtering power of 1 kW, an Ar gas pressure of 1.5 Pa, and after performing pre-sputtering of 2 kWhr, a 200-second film was formed on a 4-inch diameter Si substrate at 1 kW. The number of particles adhering to the substrate was measured with a particle counter. The same sputtering conditions were performed three times.
- the average number of particles on the Si substrate was four particles having a size of 0.17 ⁇ m to 0.25 ⁇ m and two particles having a size of 0.25 to 3.0 ⁇ m.
- the results are shown in Table 1.
- the target having such fine particles did not cause abnormal discharge due to oxide during sputtering, and the generation of particles could be reduced.
- a stable discharge was obtained when sputtering with a magnetron sputtering apparatus.
- Example 8 As the metal raw material powder, Co powder with an average particle size of 4 ⁇ m, Cr powder with an average particle size of 5 ⁇ m, Pt powder with an average particle size of 3 ⁇ m, Co—B powder with an average particle size of 10 ⁇ m, and an oxide powder with an average particle size of 0.7 ⁇ m A SiO 2 powder and a Cr 2 O 3 powder having an average particle diameter of 1 ⁇ m were prepared. These powders were weighed 2000 g with the following composition ratio. The component composition is as follows. Composition: 67.5Co-10Pt-12Cr-3B-6SiO 2 -1.5Cr 2 O 3 (mol%)
- the weighed powder was enclosed in a ball mill pot with a capacity of 10 liters together with zirconia balls as a grinding medium, and mixed by rotating for 120 hours.
- the mixed powder was filled in a carbon mold and hot-pressed in a vacuum atmosphere at a temperature of 900 ° C., a holding time of 2 hours, and a pressure of 30 MPa to obtain a sintered body. Further, this was cut with a lathe to obtain a disk-shaped target having a diameter of 180 mm and a thickness of 6 mm.
- this target was attached to a DC magnetron sputtering apparatus, and sputtering was performed.
- the sputtering conditions were a sputtering power of 1 kW, an Ar gas pressure of 1.5 Pa, and after performing pre-sputtering of 2 kWhr, sputtering was performed on a 6.5-inch diameter Al substrate with a target film thickness of 1000 ⁇ m.
- the substrate was peeled off from the sputtered material, and the film was recovered.
- the membrane was pulverized to obtain a fine powder having an average particle size of 250 ⁇ m. The process from sputtering to fine pulverization recovery was repeated 4 times.
- hot isostatic pressing HIP
- the conditions for hot isostatic pressing were a heating rate of 300 ° C./hour, a holding temperature of 850 ° C., a holding time of 2 hours, and gradually increasing the Ar gas pressure from the start of heating to 850 ° While being held at C, it was pressurized at 150 MPa. After completion of the holding, it was naturally cooled in the furnace.
- this target was bonded to a Cu backing plate having a diameter of 180 mm and a thickness of 4 mm, and then attached to a DC magnetron sputtering apparatus for sputtering.
- the sputtering conditions were a sputtering power of 1 kW, an Ar gas pressure of 1.5 Pa, and after performing pre-sputtering of 2 kWhr, a 200-second film was formed on a 4-inch diameter Si substrate at 1 kW. The number of particles adhering to the substrate was measured with a particle counter. The same sputtering conditions were performed three times.
- the average number of particles on the Si substrate was 1.3 particles having a size of 0.17 ⁇ m to 0.25 ⁇ m and one particle having a size of 0.25 to 3.0 ⁇ m.
- the results are shown in Table 1.
- the target having such fine particles did not cause abnormal discharge due to oxide during sputtering, and the generation of particles could be reduced.
- a stable discharge was obtained when sputtering with a magnetron sputtering apparatus.
- Example 9 Fe powder having an average particle diameter of 5 ⁇ m, Pt powder having an average particle diameter of 3 ⁇ m, and SiO 2 powder having an average particle diameter of 0.7 ⁇ m were prepared as the metal raw material powder. These powders were weighed 2000 g with the following composition ratio.
- the component composition is as follows. Composition: 79Fe-5Pt-16SiO 2 (mol%)
- the weighed powder was enclosed in a ball mill pot with a capacity of 10 liters together with zirconia balls as a grinding medium, and mixed by rotating for 120 hours.
- the mixed powder was filled in a carbon mold and hot pressed in a vacuum atmosphere at a temperature of 1090 ° C., a holding time of 2 hours, and a pressure of 30 MPa to obtain a sintered body. Further, this was cut with a lathe to obtain a disk-shaped target having a diameter of 180 mm and a thickness of 6 mm.
- this target was attached to a DC magnetron sputtering apparatus, and sputtering was performed.
- the sputtering conditions were a sputtering power of 1 kW, an Ar gas pressure of 1.5 Pa, and after performing pre-sputtering of 2 kWhr, sputtering was performed on a 6.5-inch diameter Al substrate with a target film thickness of 1000 ⁇ m.
- the substrate was peeled off from the sputtered material, and the film was recovered.
- the membrane was pulverized to obtain a fine powder having an average particle size of 150 ⁇ m. The process from sputtering to fine pulverization recovery was repeated 4 times.
- hot isostatic pressing HIP
- the conditions for hot isostatic pressing were a temperature increase rate of 300 ° C./hour, a holding temperature of 1000 ° C., a holding time of 2 hours, and gradually increasing the Ar gas pressure from the start of the temperature increase to 1000 ° While being held at C, it was pressurized at 150 MPa. After completion of the holding, it was naturally cooled in the furnace.
- this target was bonded to a Cu backing plate having a diameter of 180 mm and a thickness of 4 mm, and then attached to a DC magnetron sputtering apparatus for sputtering.
- the sputtering conditions were a sputtering power of 1 kW, an Ar gas pressure of 1.5 Pa, and after performing pre-sputtering of 2 kWhr, a 200-second film was formed on a 4-inch diameter Si substrate at 1 kW.
- the number of particles adhering to the substrate was measured with a particle counter. The same sputtering conditions were performed three times.
- the average number of particles on the Si substrate at this time was one particle having a size of 0.17 ⁇ m to 0.25 ⁇ m and 0.3 particle having a size of 0.25 to 3.0 ⁇ m.
- the results are shown in Table 1.
- the target having such fine particles did not cause abnormal discharge due to oxide during sputtering, and the generation of particles could be reduced.
- a stable discharge was obtained when sputtering with a magnetron sputtering apparatus.
- Example 10 Fe powder having an average particle diameter of 5 ⁇ m, Pt powder having an average particle diameter of 3 ⁇ m, and SiO 2 powder having an average particle diameter of 0.7 ⁇ m were prepared as the metal raw material powder. These powders were weighed 2000 g with the following composition ratio.
- the component composition is as follows. Composition: 29Fe-55Pt-16SiO 2 ( mol%)
- the weighed powder was enclosed in a ball mill pot with a capacity of 10 liters together with zirconia balls as a grinding medium, and mixed by rotating for 120 hours.
- the mixed powder was filled in a carbon mold and hot pressed in a vacuum atmosphere at a temperature of 1090 ° C., a holding time of 2 hours, and a pressure of 30 MPa to obtain a sintered body. Further, this was cut with a lathe to obtain a disk-shaped target having a diameter of 180 mm and a thickness of 6 mm.
- this target was attached to a DC magnetron sputtering apparatus, and sputtering was performed.
- the sputtering conditions were a sputtering power of 1 kW, an Ar gas pressure of 1.5 Pa, and after performing pre-sputtering of 2 kWhr, sputtering was performed on a 6.5-inch diameter Al substrate with a target film thickness of 1000 ⁇ m.
- the substrate was peeled off from the sputtered material, and the film was recovered.
- the membrane was pulverized to obtain a fine powder having an average particle size of 150 ⁇ m. The process from sputtering to fine pulverization recovery was repeated 4 times.
- hot isostatic pressing HIP
- the conditions for hot isostatic pressing were a temperature increase rate of 300 ° C./hour, a holding temperature of 1000 ° C., a holding time of 2 hours, and gradually increasing the Ar gas pressure from the start of the temperature increase to 1000 ° While being held at C, it was pressurized at 150 MPa. After completion of the holding, it was naturally cooled in the furnace.
- this target was bonded to a Cu backing plate having a diameter of 180 mm and a thickness of 4 mm, and then attached to a DC magnetron sputtering apparatus for sputtering.
- the sputtering conditions were a sputtering power of 1 kW, an Ar gas pressure of 1.5 Pa, and after performing pre-sputtering of 2 kWhr, a 200-second film was formed on a 4-inch diameter Si substrate at 1 kW.
- the number of particles adhering to the substrate was measured with a particle counter. The same sputtering conditions were performed three times.
- the average number of particles on the Si substrate was 1.3 particles having a size of 0.17 ⁇ m to 0.25 ⁇ m and 0.7 particles having a size of 0.25 to 3.0 ⁇ m. It was.
- the results are shown in Table 1.
- the target having such fine particles did not cause abnormal discharge due to oxide during sputtering, and the generation of particles could be reduced.
- a stable discharge was obtained when sputtering with a magnetron sputtering apparatus.
- Two powders and Cr 2 O 3 powder having an average particle diameter of 1 ⁇ m were prepared. These powders were weighed 2000 g with the following composition ratio.
- the component composition is as follows. Composition: 70Co-12Pt-12Cr-3SiO 2 -2TiO 2 -1Cr 2 O 3 (mol%)
- hot isostatic pressing HIP was performed.
- the conditions for hot isostatic pressing were a temperature increase rate of 300 ° C./hour, a holding temperature of 1000 ° C., a holding time of 2 hours, and gradually increasing the Ar gas pressure from the start of the temperature increase to 1000 ° While being held at C, it was pressurized at 150 MPa. After completion of the holding, it was naturally cooled in the furnace.
- this target was bonded to a Cu backing plate having a diameter of 180 mm and a thickness of 4 mm, and then attached to a DC magnetron sputtering apparatus for sputtering.
- the sputtering conditions were a sputtering power of 1 kW, an Ar gas pressure of 1.5 Pa, and after performing pre-sputtering of 2 kWhr, a 200-second film was formed on a 4-inch diameter Si substrate at 1 kW. The number of particles adhering to the substrate was measured with a particle counter. The same sputtering conditions were performed three times.
- the average number of particles on the Si substrate was 0.3 particles having a size of 0.17 ⁇ m to 0.25 ⁇ m and 0.3 particles having a size of 0.25 to 3.0 ⁇ m. It was.
- the results are shown in Table 1.
- the target having such fine particles did not cause abnormal discharge due to oxide during sputtering, and the generation of particles could be reduced.
- a stable discharge was obtained when sputtering with a magnetron sputtering apparatus.
- the weighed powder was enclosed in a ball mill pot with a capacity of 10 liters together with zirconia balls as a grinding medium, and mixed by rotating for 120 hours.
- the mixed powder was filled into a carbon mold and hot-pressed in a vacuum atmosphere under the conditions of a temperature of 1050 ° C., a holding time of 2 hours, and a pressure of 30 MPa to obtain a sintered body. Further, this was cut with a lathe to obtain a disk-shaped target having a diameter of 180 mm and a thickness of 6 mm.
- this target was attached to a DC magnetron sputtering apparatus, and sputtering was performed.
- the sputtering conditions were a sputtering power of 1 kW, an Ar gas pressure of 1.5 Pa, and after performing pre-sputtering of 2 kWhr, sputtering was performed on a 6.5-inch diameter Al substrate with a target film thickness of 1000 ⁇ m.
- the substrate was peeled off from the sputtered material, and the film was recovered.
- the membrane was pulverized to obtain a fine powder having an average particle size of 200 ⁇ m. The process from sputtering to fine pulverization recovery was repeated 4 times.
- hot isostatic pressing HIP
- the conditions for hot isostatic pressing were a heating rate of 300 ° C./hour, a holding temperature of 950 ° C., a holding time of 2 hours, and gradually increasing the Ar gas pressure from the start of heating to 950 ° While being held at C, it was pressurized at 150 MPa. After completion of the holding, it was naturally cooled in the furnace.
- this target was bonded to a Cu backing plate having a diameter of 180 mm and a thickness of 4 mm, and then attached to a DC magnetron sputtering apparatus for sputtering.
- the sputtering conditions were a sputtering power of 1 kW, an Ar gas pressure of 1.5 Pa, and after performing pre-sputtering of 2 kWhr, a 200-second film was formed on a 4-inch diameter Si substrate at 1 kW.
- the number of particles adhering to the substrate was measured with a particle counter. The same sputtering conditions were performed three times.
- the structure of the ferromagnetic material sputtering target can be adjusted (miniaturized) to reduce the contamination of impurities from the pulverizer and media. Abnormal discharge does not occur, and the generation of particles can be reduced. Therefore, when the target of the present invention is used, a stable discharge can be obtained when sputtering with a magnetron sputtering apparatus. Furthermore, it has the excellent effect of suppressing the abnormal discharge of oxide, reducing the generation of particles during sputtering caused by the abnormal discharge, and obtaining the cost improvement effect by improving the yield. It is useful as a ferromagnetic material sputtering target used for forming a thin film, particularly a hard disk drive recording layer.
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Abstract
Description
そしてハードディスクなどの磁気記録媒体の磁性薄膜は、生産性の高さから、上記の材料を成分とする強磁性材スパッタリングターゲットをスパッタリングして作製されることが多い。
この場合のターゲット組織は、素地が白子(鱈の精子)状に結合し、その周りにSiO2(セラミックス)が取り囲んでいる様子(特許文献1の図2)又は細紐状に分散している様子(特許文献1の図3)が見える。他の図は不鮮明であるが、同様の組織と推測される。このような組織は、後述する問題を有し、好適な磁気記録媒体用スパッタリングターゲットとは言えない。なお、特許文献1の図4に示されている球状物質は粉末であり、ターゲットの組織ではない。
このような組織は、漏洩磁束向上の点では良いが、スパッタ時のパーティクルの発生抑制の点からは好適な磁気記録媒体用スパッタリングターゲットとは言えない。
また、特許文献7には、強磁性体材料としてCo、Feを主成分とし、酸化物、窒化物、炭化物、珪化物から選択した材料で、非磁性材の形状(半径2μmの仮想円より小さい)を特定した非磁性材粒子分散型強磁性材スパッタリングターゲットが記載されている。
本発明は上記問題を鑑みて、酸化物の異常放電を抑制し、異常放電が原因となるスパッタリング中のパーティクル発生を減少させることを課題とする。これまでは、酸化物の粒径を小さくすることで異常放電の確率を減らしてきたが、磁気記録媒体の記録密度向上に伴い、許容パーティクルレベルが厳しくなってきていることから、酸化物の分散状態がより改善された非磁性材粒子分散型強磁性材スパッタリングターゲットを提供することを課題とする。
1)酸化物を含有する磁性材スパッタリングターゲットであって、酸化物の平均粒子径が400nm以下であることを特徴とする磁性材スパッタリングターゲット。
2)酸化物を含有する磁性材スパッタリングターゲットであって、酸化物の平均粒子径が400nm以下である相Aと、相Aを取り囲む酸化物の平均粒子径が2μm以下である相Bを持つことを特徴とする1)記載の磁性材スパッタリングターゲット。
3)酸化物を含有する磁性材スパッタリングターゲットであって、平均粒子径が400nm以下かつアスペクト比が2以下である酸化物組織を持つことを特徴とする1)~2)のいずれか一項に記載の磁性材スパッタリングターゲット。
4)酸化物を含有する磁性材スパッタリングターゲットであって、平均粒子径が400nm以下であり、かつ酸化物粒子に面積が最小となるように外接する長方形のアスペクト比が2以下である酸化物組織を持つ相Aと、相Aを取り囲む酸化物の平均粒子径が2μm以下である相Bを持つことを特徴とする1)~3)のいずれか一項に記載の磁性材スパッタリングターゲット。
6)Crが45mol%以下(0mol%を除く)、Ptが1mol%以上30mol%以下、残余がCoであることを特徴とする上記1)~4)のいずれか一項に記載の磁性材スパッタリングターゲット。
7)Ptが1mol%以上30mol%以下、残余がCoであることを特徴とする上記1)~4)のいずれか一項に記載の磁性材スパッタリングターゲット。
8)Ptが5mol%以上60mol%以下、残余がFeであることを特徴とする上記1)~4)のいずれか一項に記載の磁性材スパッタリングターゲット。
10)酸化物原料として、B、Si、Cr、Ti、Ta、W、Al、Mg、Mn、Ca、Zr、Yから選択した1成分以上の酸化物を1~20mol%含有することを特徴とする上記1)~9)のいずれか一項に記載の磁性材スパッタリングターゲット。
11)添加材料として、炭素、窒化物、炭化物から選択した1成分以上の無機物材料を含有することを特徴とする上記1)~10)のいずれか一項に記載の磁性材スパッタリングターゲット。
12)ホットプレス後に、HIP圧密化処理を行うことを特徴とする上記1)~11)のいずれか一項に記載の磁性材スパッタリングターゲット。
14)上記1)~12)のいずれか一項に記載する酸化物を含有する磁性材スパッタリングターゲットの製造方法であって、PVD又はCVD法により基板上に磁性材を成膜し、次にこの成膜された磁性材から基板を除去し、次にこれを粉砕してターゲット用原料とし、さらにこの原料を焼結することを特徴とする酸化物を含有する磁性材スパッタリングターゲットの製造方法。
16)上記1)~12)のいずれか一項に記載する酸化物を含有する磁性材スパッタリングターゲットの製造方法であって、PVD又はCVD法により基板上に磁性材を成膜し、次にこの成膜された磁性材から基板を除去し、次にこれを粉砕してターゲット用原料とし、さらにこの原料に不足する成分を補填して混合し、この混合体を焼結することを特徴とする酸化物を含有する磁性材スパッタリングターゲットの製造方法。
18)上記1)~12)のいずれか一項に記載する酸化物を含有する磁性材スパッタリングターゲットの製造方法であって、PVD又はCVD法により基板上に磁性材を成膜し、次にこの成膜された磁性材から基板を除去し、さらに得られた磁性材を熱間等方加圧加工(HIP)することを特徴とする酸化物を含有する磁性材スパッタリングターゲットの製造方法。
20)上記1)~12)のいずれか一項に記載する酸化物を含有する磁性材スパッタリングターゲットの製造方法であって、PVD又はCVD法により基板上に磁性材を成膜し、次にこの成膜された磁性材から基板を除去してターゲットとすることを特徴とする酸化物を含有する磁性材スパッタリングターゲットの製造方法。
21)成膜された磁性材から基板を除去し、得られた薄膜を積層してターゲットとすることを特徴とする上記17)~20)のいずれか一項に記載の酸化物を含有する磁性材スパッタリングターゲットの製造方法。
垂直磁気記録用のスパッタリングターゲットは、強磁性材の金属と酸化物や炭素などの非金属材料から構成されている。スパッタリング中のパーティクルを抑制するためには、金属と非金属を微細かつ均一に分散させる必要がある。
そのためには、強力なボールミル等を使用して原料粉末同士を機械的に粉砕混合することが有効な手法の一つである。しかし、現行の機械的に粉砕混合する手法では、組織の微細化には物理的な限界があり、パーティクルの発生を完全に無くすことは出来なかった。
PVDやCVDは一般的には薄膜を作製するための手法である。これらの手法は、原理的には材料を分子レベルまで分解した後に再構成することによって薄膜を作製していることから、機械的な粉砕混合をはるかに凌駕した超微細な組織を有している。そこで、PVDやCVD手法によって得られた膜からスパッタリングターゲットを製造することによって、上記の問題を解決する。
また、焼結に際しては、ホットプレス後にHIP圧密化処理を行うことが有効であるが、焼結条件は、これに限定されるものではなく、任意に設定可能である。
また、前記補填(補充)する材料としては、焼結原料と類似した微細粒を使用することが望ましいが、焼結原料の中では少量となるので、大きな影響を受けないと言える。
しかし、粒界の酸化物は蒸着膜内の酸化物よりも大きいとはいえ、機械的な粉砕混合のものと比較すると十分に小さいこと、さらに、焼結体の大部分が微細な組織であり、この大きな粒子の影響が少なくなることから、この蒸着膜の粒界に存在する酸化物は大きな問題にはなることはないと言える。
また、この成膜された磁性材から基板を除去して、そのままターゲットとすることもできる。さらに、成膜された磁性材から基板を除去し、得られた薄膜を積層して、これを熱間等方加圧加工(HIP)などのプレス加工を施して、酸化物を含有する磁性材スパッタリングターゲットとすることもできる。
このようにして得る薄膜の膜厚及び積層の枚数は任意であり、材料及び要求に応じて、適宜決定できる。さらに不足する成分を補填し、焼結して、酸化物を含有する磁性材スパッタリングターゲットを製造することもできる。本願発明は、これらを全て包含するものである。
また、酸化物の平均粒子径が400nm以下である相Aと、相Aを取り囲む酸化物の平均粒子径が2μm以下である相Bを持つ酸化物を含有する磁性材スパッタリングターゲット、さらには平均粒子径が400nm以下かつアスペクト比が2以下である酸化物組織を持つ酸化物を含有する磁性材スパッタリングターゲット、平均粒子径が400nm以下であり、かつ酸化物粒子に面積が最小となるように外接する長方形のアスペクト比が2以下である酸化物組織を持つ相Aと、相Aを取り囲む酸化物の平均粒子径が2μm以下である相Bを持つ酸化物を含有する磁性材スパッタリングターゲットを得ることができる。
そして、得られた焼結原料を所望の組成になるように秤量し、乳鉢やボールミル等の公知の手法を用いて粉砕を兼ねて混合する。補填する原料粉末については、この段階で混合すればよい。また、ミキサーとしては、遊星運動型ミキサーあるいは遊星運動型攪拌混合機を使用することができるが、特に粉砕機及び混合機に制限はない。さらに、混合中の酸化の問題を考慮すると、不活性ガス雰囲気中あるいは真空中で混合することが好ましいと言える。
したがって、本願発明は、Fe-Ni合金系磁性材料、Fe-Co合金系磁性材料、Fe-Ni-Co合金系磁性材料などの、他の成分系においても、同様に適用でき、同様の効果が得られることは、容易に理解されるべきことである。本願発明は、これらを包含するものである。
金属原料粉末として、平均粒径4μmのCo粉末、平均粒径5μmのCr粉末、平均粒径3μmのPt粉末を、酸化物粉末として平均粒径1μmのTiO2粉末、平均粒径0.7μmのSiO2粉末、平均粒径1μmのCr2O3粉末を用意した。これらの粉末を以下の組成比で2000g秤量した。組成は、次の通りである。
組成:70Co-18Pt-3Cr-4SiO2-2TiO2-3Cr2O3(mol%)
次に、このスパッタ成膜した材料から基板を剥離し、熱間等方加圧加工(HIP)を施した。熱間等方加圧加工の条件は、昇温速度300°C/時間、保持温度950°C、保持時間2時間とし、昇温開始時からArガスのガス圧を徐々に高めて、950°Cで保持中は150MPaで加圧した。保持終了後は炉内でそのまま自然冷却させた。
次に、このターゲットを直径が180mm、厚さが4mmのCu製のバッキングプレートにボンディングした後、DCマグネトロンスパッタ装置に取り付けスパッタリングを行った。スパッタ条件は、スパッタパワー1kW、Arガス圧1.5Paとし、2kWhrのプレスパッタを実施した後、4インチ径のSi基盤に1kWで200秒成膜した。
この結果を表1に示す。このような微細粒子を持つターゲットは、スパッタリング時の酸化物による異常放電は生ぜず、パーティクルの発生を減少させることができた。そして、マグネトロンスパッタ装置でスパッタリングする際に安定した放電が得られた。
金属原料粉末として、平均粒径4μmのCo粉末、平均粒径5μmのCr粉末、平均粒径3μmのPt粉末を、酸化物粉末として平均粒径1μmのTiO2粉末、平均粒径0.7μmのSiO2粉末、平均粒径1μmのCr2O3粉末を用意した。これらの粉末を以下の組成比で2000g秤量した。成分組成は、次の通りである。
組成:70Co-18Pt-3Cr-4SiO2-2TiO2-3Cr2O3(mol%)
次に、このターゲットをDCマグネトロンスパッタ装置に取り付けスパッタリングを行った。スパッタ条件は、スパッタパワー1kW、Arガス圧1.5Paとし、2kWhrのプレスパッタを実施した後、4インチ径のSi基盤に1kWで200秒成膜した。基板上へ付着したパーティクルの個数をパーティクルカウンターで測定した。同様なスパッタ条件で、3回行った。このときのSi基板上のパーティクル数の平均は、0.17μm~0.25μmの大きさのパーティクルが10.7個、0.25~3.0μmの大きさのパーティクルが5.3個と、実施例1と比べて増加した。この結果を、表1に示す。
金属原料粉末として、平均粒径4μmのCo粉末、平均粒径5μmのCr粉末、平均粒径3μmのPt粉末、平均粒径5μmのRu粉末、酸化物粉末として平均粒径1μmのTiO2粉末、平均粒径0.7μmのSiO2粉末、平均粒径1μmのCoO粉末を用意した。これらの粉末を以下の組成比で2000g秤量した。成分組成は、次の通りである。
組成:59Co-20Pt-5Ru-3Cr-5SiO2-2TiO2-6CoO(mol%)
次に、このスパッタ成膜した材料から基板を剥離し、膜を回収した。そしてこの膜を粉砕して、平均粒径が200μmの微細粉を得た。スパッタから微粉砕回収までの工程を4回繰り返した。これをカーボン製の型に充填し、真空雰囲気中、温度1000°C、保持時間2時間、加圧力30MPaの条件のもとホットプレスして焼結体を得た。
次に、熱間等方加圧加工(HIP)を施した。熱間等方加圧加工の条件は、昇温速度300°C/時間、保持温度1000°C、保持時間2時間とし、昇温開始時からArガスのガス圧を徐々に高めて、1000°Cで保持中は150MPaで加圧した。保持終了後は炉内でそのまま自然冷却させた。
参考までに、このターゲットにおいて、酸化物の相Aの粒界に大き目の酸化物の相Bが存在している様子を図7(写真)に示す。また、説明図を図8に示す。なお、図7と図8のそれぞれは、別の場所の組織を観察したものである。
次に、このターゲットを直径が180mm、厚さが4mmのCu製のバッキングプレートにボンディングした後、DCマグネトロンスパッタ装置に取り付けスパッタリングを行った。スパッタ条件は、スパッタパワー1kW、Arガス圧1.5Paとし、2kWhrのプレスパッタを実施した後、4インチ径のSi基盤に1kWで200秒成膜した。基板上へ付着したパーティクルの個数をパーティクルカウンターで測定した。同様なスパッタ条件で、3回行った。
この結果を表1に示す。このような微細粒子を持つターゲットは、スパッタリング時の酸化物による異常放電は生ぜず、パーティクルの発生を減少させることができた。そして、マグネトロンスパッタ装置でスパッタリングする際に安定した放電が得られた。
金属原料粉末として、平均粒径4μmのCo粉末、平均粒径5μmのCr粉末、平均粒径3μmのPt粉末、平均粒径5μmのRu粉末、酸化物粉末として平均粒径1μmのTiO2粉末、平均粒径0.7μmのSiO2粉末、平均粒径1μmのCoO粉末を用意した。これらの粉末を以下の組成比で2000g秤量した。成分組成は、次の通りである。
組成:59Co-20Pt-5Ru-3Cr-5SiO2-2TiO2-6CoO(mol%)
さらにこのターゲットの組織を観察したところ、顕微鏡視野範囲内での酸化物粒子の平均粒径は1.6μmであった。このターゲットの組織を、図4に示す。
このときのSi基板上のパーティクル数の平均は、0.17μm~0.25μmの大きさのパーティクルが12.3個、0.25~3.0μmの大きさのパーティクルが7.3個と、実施例2と比べて増加した。この結果を表1に示す。
金属原料粉末として、平均粒径4μmのCo粉末、平均粒径5μmのCr粉末、平均粒径3μmのPt粉末、酸化物粉末として平均粒径1μmのTa2O5粉末、平均粒径0.7μmのSiO2粉末を用意した。これらの粉末を以下の組成比で2000g秤量した。成分組成は、次の通りである。
組成:76Co-12Pt-5Cr-5Ta2O5-2SiO2(mol%)
次に、このスパッタ成膜した材料から基板を剥離し、膜を回収した。そしてこの膜を粉砕して、平均粒径が100μmの微細粉を得た。スパッタから微粉砕回収までの工程を4回繰り返した。これをカーボン製の型に充填し、真空雰囲気中、温度1000°C、保持時間2時間、加圧力30MPaの条件のもとホットプレスして焼結体を得た。
次に、熱間等方加圧加工(HIP)を施した。熱間等方加圧加工の条件は、昇温速度300°C/時間、保持温度1000°C、保持時間2時間とし、昇温開始時からArガスのガス圧を徐々に高めて、1000°Cで保持中は150MPaで加圧した。保持終了後は炉内でそのまま自然冷却させた。
次に、このターゲットを直径が180mm、厚さが4mmのCu製のバッキングプレートにボンディングした後、DCマグネトロンスパッタ装置に取り付けスパッタリングを行った。スパッタ条件は、スパッタパワー1kW、Arガス圧1.5Paとし、2kWhrのプレスパッタを実施した後、4インチ径のSi基盤に1kWで200秒成膜した。基板上へ付着したパーティクルの個数をパーティクルカウンターで測定した。同様なスパッタ条件で、3回行った。
このような微細粒子を持つターゲットは、スパッタリング時の酸化物による異常放電は生ぜず、パーティクルの発生を減少させることができた。そして、マグネトロンスパッタ装置でスパッタリングする際に安定した放電が得られた。
金属原料粉末として、平均粒径4μmのCo粉末、平均粒径5μmのCr粉末、平均粒径3μmのPt粉末、酸化物粉末として平均粒径1μmのTa2O5粉末、平均粒径0.7μmのSiO2粉末を用意した。これらの粉末を以下の組成比で2000g秤量した。成分組成は、次の通りである。
組成:76Co-12Pt-5Cr-5Ta2O5-2SiO2(mol%)
さらにこのターゲットの組織を観察したところ、顕微鏡視野範囲内での酸化物粒子の平均粒径は1μmであった。
金属原料粉末として、平均粒径4μmのCo粉末、平均粒径5μmのCr粉末、平均粒径3μmのPt粉末、酸化物粉末として平均粒径10μmのB2O3粉末、平均粒径1μmのTiO2粉末、平均粒径0.7μmのSiO2粉末、平均粒径1μmのCoO粉末を用意した。これらの粉末を以下の組成比で2000g秤量した。成分組成は、次の通りである。
組成:70Co-10Pt-12Cr-2B2O3-3TiO2-2SiO2-1CoO(mol%)
次に、このスパッタ成膜した材料から基板を剥離し、膜を回収した。そしてこの膜を粉砕して、平均粒径が250μmの微細粉を得た。スパッタから微粉砕回収までの工程を4回繰り返した。これをカーボン製の型に充填し、真空雰囲気中、温度950°C、保持時間2時間、加圧力30MPaの条件のもとホットプレスして焼結体を得た。
次に、熱間等方加圧加工(HIP)を施した。熱間等方加圧加工の条件は、昇温速度300°C/時間、保持温度950°C、保持時間2時間とし、昇温開始時からArガスのガス圧を徐々に高めて、950°Cで保持中は150MPaで加圧した。保持終了後は炉内でそのまま自然冷却させた。
次に、このターゲットを直径が180mm、厚さが4mmのCu製のバッキングプレートにボンディングした後、DCマグネトロンスパッタ装置に取り付けスパッタリングを行った。スパッタ条件は、スパッタパワー1kW、Arガス圧1.5Paとし、2kWhrのプレスパッタを実施した後、4インチ径のSi基盤に1kWで200秒成膜した。基板上へ付着したパーティクルの個数をパーティクルカウンターで測定した。同様なスパッタ条件で、3回行った。
このような微細粒子を持つターゲットは、スパッタリング時の酸化物による異常放電は生ぜず、パーティクルの発生を減少させることができた。そして、マグネトロンスパッタ装置でスパッタリングする際に安定した放電が得られた。
金属原料粉末として、平均粒径4μmのCo粉末、平均粒径5μmのCr粉末、平均粒径3μmのPt粉末、酸化物粉末として平均粒径10μmのB2O3粉末、平均粒径2μmのTiO2粉末、平均粒径0.7μmのSiO2粉末、平均粒径1μmのCoO粉末を用意した。これらの粉末を以下の組成比で2000g秤量した。成分組成は、次の通りである。
組成:70Co-10Pt-12Cr-2B2O3-3TiO2-2SiO2-1CoO(mol%)
さらにこのターゲットの組織を観察したところ、顕微鏡視野範囲内での酸化物粒子の平均粒径は1.8μmであった。
金属原料粉末として、平均粒径4μmのCo粉末、平均粒径5μmのCr粉末、酸化物粉末として平均粒径1μmのTiO2粉末を用意した。これらの粉末を以下の組成比で2000g秤量した。成分組成は、次の通りである。
組成:50Co-40Cr-10TiO2(mol%)
次に、このスパッタ成膜した材料から基板を剥離し、膜を回収した。そしてこの膜を粉砕して、平均粒径が50μmの微細粉を得た。スパッタから微粉砕回収までの工程を4回繰り返した。これをカーボン製の型に充填し、真空雰囲気中、温度950°C、保持時間2時間、加圧力30MPaの条件のもとホットプレスして焼結体を得た。
次に、熱間等方加圧加工(HIP)を施した。熱間等方加圧加工の条件は、昇温速度300°C/時間、保持温度950°C、保持時間2時間とし、昇温開始時からArガスのガス圧を徐々に高めて、950°Cで保持中は150MPaで加圧した。保持終了後は炉内でそのまま自然冷却させた。
次に、このターゲットを直径が180mm、厚さが4mmのCu製のバッキングプレートにボンディングした後、DCマグネトロンスパッタ装置に取り付けスパッタリングを行った。スパッタ条件は、スパッタパワー1kW、Arガス圧1.5Paとし、2kWhrのプレスパッタを実施した後、4インチ径のSi基盤に1kWで200秒成膜した。基板上へ付着したパーティクルの個数をパーティクルカウンターで測定した。同様なスパッタ条件で、3回行った。
このような微細粒子を持つターゲットは、スパッタリング時の酸化物による異常放電は生ぜず、パーティクルの発生を減少させることができた。そして、マグネトロンスパッタ装置でスパッタリングする際に安定した放電が得られた。
金属原料粉末として、平均粒径4μmのCo粉末、平均粒径5μmのCr粉末、酸化物粉末として平均粒径1μmのTiO2粉末を用意した。これらの粉末を以下の組成比で2000g秤量した。成分組成は、次の通りである。
組成:50Co-40Cr-10TiO2(mol%)
さらにこのターゲットの組織を観察したところ、顕微鏡視野範囲内での酸化物粒子の平均粒径は2.3μmであった。
金属原料粉末として、平均粒径4μmのCo粉末、平均粒径3μmのPt粉末、酸化物粉末として平均粒径0.7μmのSiO2粉末、平均粒径1μmのTiO2粉末、平均粒径1μmのCr2O3粉末を用意した。これらの粉末を以下の組成比で2000g秤量した。成分組成は、次の通りである。
組成:72Co-20Pt-3SiO2-2TiO2-3Cr2O3(mol%)
次に、このスパッタ成膜した材料から基板を剥離し、熱間等方加圧加工(HIP)を施した。熱間等方加圧加工の条件は、昇温速度300°C/時間、保持温度1100°C、保持時間2時間とし、昇温開始時からArガスのガス圧を徐々に高めて、1100°Cで保持中は150MPaで加圧した。保持終了後は炉内でそのまま自然冷却させた。
次に、このターゲットを直径が180mm、厚さが4mmのCu製のバッキングプレートにボンディングした後、DCマグネトロンスパッタ装置に取り付けスパッタリングを行った。スパッタ条件は、スパッタパワー1kW、Arガス圧1.5Paとし、2kWhrのプレスパッタを実施した後、4インチ径のSi基盤に1kWで200秒成膜した。基板上へ付着したパーティクルの個数をパーティクルカウンターで測定した。同様なスパッタ条件で、3回行った。
このような微細粒子を持つターゲットは、スパッタリング時の酸化物による異常放電は生ぜず、パーティクルの発生を減少させることができた。そして、マグネトロンスパッタ装置でスパッタリングする際に安定した放電が得られた。
金属原料粉末として、平均粒径4μmのCo粉末、平均粒径3μmのPt粉末、平均粒径5μmのRu粉末、酸化物粉末として平均粒径0.7μmのSiO2粉末、平均粒径1μmのTiO2粉末、平均粒径1μmのCr2O3粉末を用意した。これらの粉末を以下の組成比で2000g秤量した。成分組成は、次の通りである。
組成:85Co-5Pt-3Ru-2SiO2-2TiO2-3Cr2O3(mol%)
次に、このスパッタ成膜した材料から基板を剥離し、膜を回収した。そしてこの膜を粉砕して、平均粒径が300μmの微細粉を得た。スパッタから微粉砕回収までの工程を4回繰り返した。これをカーボン製の型に充填し、真空雰囲気中、温度1000°C、保持時間2時間、加圧力30MPaの条件のもとホットプレスして焼結体を得た。
次に、熱間等方加圧加工(HIP)を施した。熱間等方加圧加工の条件は、昇温速度300°C/時間、保持温度1000°C、保持時間2時間とし、昇温開始時からArガスのガス圧を徐々に高めて、1100°Cで保持中は150MPaで加圧した。保持終了後は炉内でそのまま自然冷却させた。
次に、このターゲットを直径が180mm、厚さが4mmのCu製のバッキングプレートにボンディングした後、DCマグネトロンスパッタ装置に取り付けスパッタリングを行った。スパッタ条件は、スパッタパワー1kW、Arガス圧1.5Paとし、2kWhrのプレスパッタを実施した後、4インチ径のSi基盤に1kWで200秒成膜した。基板上へ付着したパーティクルの個数をパーティクルカウンターで測定した。同様なスパッタ条件で、3回行った。
このような微細粒子を持つターゲットは、スパッタリング時の酸化物による異常放電は生ぜず、パーティクルの発生を減少させることができた。そして、マグネトロンスパッタ装置でスパッタリングする際に安定した放電が得られた。
金属原料粉末として、平均粒径4μmのCo粉末、平均粒径5μmのCr粉末、平均粒径3μmのPt粉末、平均粒径10μmのCo-B粉末、酸化物粉末として平均粒径0.7μmのSiO2粉末、平均粒径1μmのCr2O3粉末を用意した。これらの粉末を以下の組成比で2000g秤量した。成分組成は、次の通りである。
組成:67.5Co-10Pt-12Cr-3B-6SiO2-1.5Cr2O3(mol%)
次に、このスパッタ成膜した材料から基板を剥離し、膜を回収した。そしてこの膜を粉砕して、平均粒径が250μmの微細粉を得た。スパッタから微粉砕回収までの工程を4回繰り返した。これをカーボン製の型に充填し、真空雰囲気中、温度850°C、保持時間2時間、加圧力30MPaの条件のもとホットプレスして焼結体を得た。
次に、熱間等方加圧加工(HIP)を施した。熱間等方加圧加工の条件は、昇温速度300°C/時間、保持温度850°C、保持時間2時間とし、昇温開始時からArガスのガス圧を徐々に高めて、850°Cで保持中は150MPaで加圧した。保持終了後は炉内でそのまま自然冷却させた。
次に、このターゲットを直径が180mm、厚さが4mmのCu製のバッキングプレートにボンディングした後、DCマグネトロンスパッタ装置に取り付けスパッタリングを行った。スパッタ条件は、スパッタパワー1kW、Arガス圧1.5Paとし、2kWhrのプレスパッタを実施した後、4インチ径のSi基盤に1kWで200秒成膜した。基板上へ付着したパーティクルの個数をパーティクルカウンターで測定した。同様なスパッタ条件で、3回行った。
このような微細粒子を持つターゲットは、スパッタリング時の酸化物による異常放電は生ぜず、パーティクルの発生を減少させることができた。そして、マグネトロンスパッタ装置でスパッタリングする際に安定した放電が得られた。
金属原料粉末として、平均粒径5μmのFe粉末、平均粒径3μmのPt粉末、酸化物粉末として平均粒径0.7μmのSiO2粉末を用意した。これらの粉末を以下の組成比で2000g秤量した。成分組成は、次の通りである。
組成:79Fe-5Pt-16SiO2(mol%)
次に、このスパッタ成膜した材料から基板を剥離し、膜を回収した。そしてこの膜を粉砕して、平均粒径が150μmの微細粉を得た。スパッタから微粉砕回収までの工程を4回繰り返した。これをカーボン製の型に充填し、真空雰囲気中、温度1000°C、保持時間2時間、加圧力30MPaの条件のもとホットプレスして焼結体を得た。
次に、熱間等方加圧加工(HIP)を施した。熱間等方加圧加工の条件は、昇温速度300°C/時間、保持温度1000°C、保持時間2時間とし、昇温開始時からArガスのガス圧を徐々に高めて、1000°Cで保持中は150MPaで加圧した。保持終了後は炉内でそのまま自然冷却させた。
次に、このターゲットを直径が180mm、厚さが4mmのCu製のバッキングプレートにボンディングした後、DCマグネトロンスパッタ装置に取り付けスパッタリングを行った。スパッタ条件は、スパッタパワー1kW、Arガス圧1.5Paとし、2kWhrのプレスパッタを実施した後、4インチ径のSi基盤に1kWで200秒成膜した。基板上へ付着したパーティクルの個数をパーティクルカウンターで測定した。同様なスパッタ条件で、3回行った。
このような微細粒子を持つターゲットは、スパッタリング時の酸化物による異常放電は生ぜず、パーティクルの発生を減少させることができた。そして、マグネトロンスパッタ装置でスパッタリングする際に安定した放電が得られた。
金属原料粉末として、平均粒径5μmのFe粉末、平均粒径3μmのPt粉末、酸化物粉末として平均粒径0.7μmのSiO2粉末を用意した。これらの粉末を以下の組成比で2000g秤量した。成分組成は、次の通りである。
組成:29Fe-55Pt-16SiO2(mol%)
次に、このスパッタ成膜した材料から基板を剥離し、膜を回収した。そしてこの膜を粉砕して、平均粒径が150μmの微細粉を得た。スパッタから微粉砕回収までの工程を4回繰り返した。これをカーボン製の型に充填し、真空雰囲気中、温度1000°C、保持時間2時間、加圧力30MPaの条件のもとホットプレスして焼結体を得た。
次に、熱間等方加圧加工(HIP)を施した。熱間等方加圧加工の条件は、昇温速度300°C/時間、保持温度1000°C、保持時間2時間とし、昇温開始時からArガスのガス圧を徐々に高めて、1000°Cで保持中は150MPaで加圧した。保持終了後は炉内でそのまま自然冷却させた。
次に、このターゲットを直径が180mm、厚さが4mmのCu製のバッキングプレートにボンディングした後、DCマグネトロンスパッタ装置に取り付けスパッタリングを行った。スパッタ条件は、スパッタパワー1kW、Arガス圧1.5Paとし、2kWhrのプレスパッタを実施した後、4インチ径のSi基盤に1kWで200秒成膜した。基板上へ付着したパーティクルの個数をパーティクルカウンターで測定した。同様なスパッタ条件で、3回行った。
このような微細粒子を持つターゲットは、スパッタリング時の酸化物による異常放電は生ぜず、パーティクルの発生を減少させることができた。そして、マグネトロンスパッタ装置でスパッタリングする際に安定した放電が得られた。
金属原料粉末として、平均粒径4μmのCo粉末、平均粒径3μmのPt粉末、平均粒径5μmのCr粉末、酸化物粉末として平均粒径0.7μmのSiO2粉末、平均粒径1μmのTiO2粉末、平均粒径1μmのCr2O3粉末を用意した。これらの粉末を以下の組成比で2000g秤量した。成分組成は、次の通りである。
組成:70Co-12Pt-12Cr-3SiO2-2TiO2-1Cr2O3(mol%)
次に、このスパッタ成膜した材料から基板を剥離し、膜を回収した。スパッタ成膜から膜回収までの工程を回収した膜の総厚が4000μmになるまで繰り返した。回収したシート状の薄膜をカーボン製の型に積層し、真空雰囲気中、温度1000°C、保持時間2時間、加圧力30MPaの条件のもとホットプレスして焼結体を得た。
次に、このターゲットを直径が180mm、厚さが4mmのCu製のバッキングプレートにボンディングした後、DCマグネトロンスパッタ装置に取り付けスパッタリングを行った。スパッタ条件は、スパッタパワー1kW、Arガス圧1.5Paとし、2kWhrのプレスパッタを実施した後、4インチ径のSi基盤に1kWで200秒成膜した。基板上へ付着したパーティクルの個数をパーティクルカウンターで測定した。同様なスパッタ条件で、3回行った。
このような微細粒子を持つターゲットは、スパッタリング時の酸化物による異常放電は生ぜず、パーティクルの発生を減少させることができた。そして、マグネトロンスパッタ装置でスパッタリングする際に安定した放電が得られた。
金属原料粉末として、平均粒径4μmのCo粉末、平均粒径5μmのCr粉末、平均粒径3μmのPt粉末、酸化物粉末として平均粒径1μmのTa2O5粉末、平均粒径0.7μmのSiO2粉末を用意した。これらの粉末を以下の組成比で2000g秤量した。成分組成は、次の通りである。
組成:79Co-10Pt-6Cr-1Ta2O5-4SiO2(mol%)
次に、このスパッタ成膜した材料から基板を剥離し、膜を回収した。そしてこの膜を粉砕して、平均粒径が200μmの微細粉を得た。スパッタから微粉砕回収までの工程を4回繰り返した。これをカーボン製の型に充填し、真空雰囲気中、温度950°C、保持時間2時間、加圧力30MPaの条件のもとホットプレスして焼結体を得た。
次に、熱間等方加圧加工(HIP)を施した。熱間等方加圧加工の条件は、昇温速度300°C/時間、保持温度950°C、保持時間2時間とし、昇温開始時からArガスのガス圧を徐々に高めて、950°Cで保持中は150MPaで加圧した。保持終了後は炉内でそのまま自然冷却させた。
次に、このターゲットを直径が180mm、厚さが4mmのCu製のバッキングプレートにボンディングした後、DCマグネトロンスパッタ装置に取り付けスパッタリングを行った。スパッタ条件は、スパッタパワー1kW、Arガス圧1.5Paとし、2kWhrのプレスパッタを実施した後、4インチ径のSi基盤に1kWで200秒成膜した。基板上へ付着したパーティクルの個数をパーティクルカウンターで測定した。同様なスパッタ条件で、3回行った。
このような微細粒子を持つターゲットは、スパッタリング時の酸化物による異常放電は生ぜず、パーティクルの発生を減少させることができた。そして、マグネトロンスパッタ装置でスパッタリングする際に安定した放電が得られた。
Claims (21)
- 酸化物を含有する磁性材スパッタリングターゲットであって、酸化物の平均粒子径が400nm以下であることを特徴とする磁性材スパッタリングターゲット。
- 酸化物を含有する磁性材スパッタリングターゲットであって、酸化物の平均粒子径が400nm以下である相Aと、相Aを取り囲む酸化物の平均粒子径が2μm以下である相Bを持つことを特徴とする請求項1記載の磁性材スパッタリングターゲット。
- 酸化物を含有する磁性材スパッタリングターゲットであって、平均粒子径が400nm以下、かつアスペクト比が2以下である酸化物組織を持つことを特徴とする請求項1~2のいずれか一項に記載の磁性材スパッタリングターゲット。
- 酸化物を含有する磁性材スパッタリングターゲットであって、平均粒子径が400nm以下であり、かつ酸化物粒子に面積が最小となるように外接する長方形のアスペクト比が2以下である酸化物組織を持つ相Aと、相Aを取り囲む酸化物の平均粒子径が2μm以下である相Bを持つことを特徴とする請求項1~3のいずれか一項に記載の磁性材スパッタリングターゲット。
- Crが45mol%以下(0mol%を除く)、残余がCoであることを特徴とする請求項1~4のいずれか一項に記載の磁性材スパッタリングターゲット。
- Crが45mol%以下(0mol%を除く)、Ptが1mol%以上30mol%以下、残余がCoであることを特徴とする請求項1~4のいずれか一項に記載の磁性材スパッタリングターゲット。
- Ptが1mol%以上30mol%以下、残余がCoであることを特徴とする請求項1~4のいずれか一項に記載の磁性材スパッタリングターゲット。
- Ptが5mol%以上60mol%以下、残余がFeであることを特徴とする請求項1~4のいずれか一項に記載の磁性材スパッタリングターゲット。
- 添加元素として、B、Ti、V、Mn、Zr、Nb、Ru、Mo、Ta、W、Ag、Au、Cu、Cから選択した1元素以上を、0.5mol%以上20mol%以下含有することを特徴とする請求項1~8のいずれか一項に記載の磁性材スパッタリングターゲット。
- 酸化物原料として、B、Si、Cr、Ti、Ta、W、Al、Mg、Mn、Ca、Zr、Yから選択した1成分以上の酸化物を1~20mol%含有することを特徴とする請求項1~9のいずれか一項に記載の磁性材スパッタリングターゲット。
- 添加材料として、炭素、窒化物、炭化物から選択した1成分以上の無機物材料を含有することを特徴とする請求項1~10のいずれか一項に記載の磁性材スパッタリングターゲット。
- ホットプレス後に、HIP圧密化処理を行うことを特徴とする請求項1~11のいずれか一項に記載の磁性材スパッタリングターゲット。
- 酸化物を含有する磁性材スパッタリングターゲットの製造方法であって、PVD又はCVD法により基板上に磁性材を成膜し、次にこの成膜された磁性材から基板を除去し、次にこれを粉砕してターゲット用原料とし、さらにこの原料を焼結することを特徴とする酸化物を含有する磁性材スパッタリングターゲットの製造方法。
- 請求項1~12のいずれか一項に記載する酸化物を含有する磁性材スパッタリングターゲットの製造方法であって、PVD又はCVD法により基板上に磁性材を成膜し、次にこの成膜された磁性材から基板を除去し、次にこれを粉砕してターゲット用原料とし、さらにこの原料を焼結することを特徴とする酸化物を含有する磁性材スパッタリングターゲットの製造方法。
- 酸化物を含有する磁性材スパッタリングターゲットの製造方法であって、PVD又はCVD法により基板上に磁性材を成膜し、次にこの成膜された磁性材から基板を除去し、次にこれを粉砕してターゲット用原料とし、さらにこの原料に不足する成分を補填して混合し、この混合体を焼結することを特徴とする酸化物を含有する磁性材スパッタリングターゲットの製造方法。
- 請求項1~12のいずれか一項に記載する酸化物を含有する磁性材スパッタリングターゲットの製造方法であって、PVD又はCVD法により基板上に磁性材を成膜し、次にこの成膜された磁性材から基板を除去し、次にこれを粉砕してターゲット用原料とし、さらにこの原料に不足する成分を補填して混合し、この混合体を焼結することを特徴とする酸化物を含有する磁性材スパッタリングターゲットの製造方法。
- 酸化物を含有する磁性材スパッタリングターゲットの製造方法であって、PVD又はCVD法により基板上に磁性材を成膜し、次にこの成膜された磁性材から基板を除去し、さらに得られた磁性材を熱間等方加圧加工(HIP)することを特徴とする酸化物を含有する磁性材スパッタリングターゲットの製造方法。
- 請求項1~12のいずれか一項に記載する酸化物を含有する磁性材スパッタリングターゲットの製造方法であって、PVD又はCVD法により基板上に磁性材を成膜し、次にこの成膜された磁性材から基板を除去し、さらに得られた磁性材を熱間等方加圧加工(HIP)することを特徴とする酸化物を含有する磁性材スパッタリングターゲットの製造方法。
- 酸化物を含有する磁性材スパッタリングターゲットの製造方法であって、PVD又はCVD法により基板上に磁性材を成膜し、次にこの成膜された磁性材から基板を除去してターゲットとすることを特徴とする酸化物を含有する磁性材スパッタリングターゲットの製造方法。
- 請求項1~12いずれか一項に記載する酸化物を含有する磁性材スパッタリングターゲットの製造方法であって、PVD又はCVD法により基板上に磁性材を成膜し、次にこの成膜された磁性材から基板を除去してターゲットとすることを特徴とする酸化物を含有する磁性材スパッタリングターゲットの製造方法。
- 成膜された磁性材から基板を除去し、得られた薄膜を積層してターゲットとすることを特徴とする請求項17~20のいずれか一項に記載の酸化物を含有する磁性材スパッタリングターゲットの製造方法。
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JP2021127524A (ja) * | 2016-12-28 | 2021-09-02 | Jx金属株式会社 | ガスフロースパッタリング装置及びスパッタリングターゲット原料の製造方法 |
CN110100042B (zh) * | 2016-12-28 | 2021-12-07 | Jx金属株式会社 | 气流溅射装置以及溅射靶原料的制造方法 |
JP7005896B2 (ja) | 2016-12-28 | 2022-01-24 | Jx金属株式会社 | ガスフロースパッタリング装置及びスパッタリングターゲット原料の製造方法 |
Also Published As
Publication number | Publication date |
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CN104169457A (zh) | 2014-11-26 |
US9793099B2 (en) | 2017-10-17 |
CN106048545A (zh) | 2016-10-26 |
MY168701A (en) | 2018-11-29 |
MY179242A (en) | 2020-11-02 |
TW201402848A (zh) | 2014-01-16 |
US20140311902A1 (en) | 2014-10-23 |
TW201738403A (zh) | 2017-11-01 |
SG11201401542YA (en) | 2014-11-27 |
TWI625408B (zh) | 2018-06-01 |
US10325761B2 (en) | 2019-06-18 |
US20180005807A1 (en) | 2018-01-04 |
JPWO2013136962A1 (ja) | 2015-08-03 |
TWI604079B (zh) | 2017-11-01 |
JP5976867B2 (ja) | 2016-08-24 |
JP5876138B2 (ja) | 2016-03-02 |
JP2015172244A (ja) | 2015-10-01 |
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