SG11201807804PA - Ferromagnetic material sputtering target - Google Patents
Ferromagnetic material sputtering targetInfo
- Publication number
- SG11201807804PA SG11201807804PA SG11201807804PA SG11201807804PA SG11201807804PA SG 11201807804P A SG11201807804P A SG 11201807804PA SG 11201807804P A SG11201807804P A SG 11201807804PA SG 11201807804P A SG11201807804P A SG 11201807804PA SG 11201807804P A SG11201807804P A SG 11201807804PA
- Authority
- SG
- Singapore
- Prior art keywords
- mol
- sputtering target
- ferromagnetic material
- less
- material sputtering
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/07—Alloys based on nickel or cobalt based on cobalt
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0688—Cermets, e.g. mixtures of metal and one or more of carbides, nitrides, oxides or borides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
- Powder Metallurgy (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Abstract
PCTJ P/011767 FERROMAGNETIC MATERIAL SPUTTERING TARGET 5 Provided is an oxide grain-dispersed ferromagnetic material sputtering target having a fine structure which can effectively reduce abnormal discharge and generation of particles caused by oxide grains. A sintered sputtering target contains, as metal or an alloy, 0 mol% or more and 45 mol% or less of Pt, 55 10 mol% or more and 95 mol% or less of Co, and 0 mol% or more and 40 mol% or less of Cr; and further contains at least two kinds of oxides. The oxides are present in the metal or alloy, and the standard deviation of the number density of oxides is 2.5 or less. 15 Fig. 2 22
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016072148 | 2016-03-31 | ||
PCT/JP2017/011767 WO2017170138A1 (en) | 2016-03-31 | 2017-03-23 | Ferromagnetic material sputtering target |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201807804PA true SG11201807804PA (en) | 2018-10-30 |
Family
ID=59965613
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201807804PA SG11201807804PA (en) | 2016-03-31 | 2017-03-23 | Ferromagnetic material sputtering target |
Country Status (6)
Country | Link |
---|---|
US (1) | US10837101B2 (en) |
JP (1) | JP6545898B2 (en) |
CN (1) | CN108884557B (en) |
MY (1) | MY189794A (en) |
SG (1) | SG11201807804PA (en) |
WO (1) | WO2017170138A1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MY191374A (en) * | 2016-12-28 | 2022-06-21 | Jx Nippon Mining & Metals Corp | Magnetic material sputtering target and method for manufacturing same |
EP3404403B1 (en) * | 2017-05-18 | 2019-03-27 | Grob-Werke GmbH & Co. KG | Method and device for testing the quality of coated surfaces |
WO2021010490A1 (en) * | 2019-07-18 | 2021-01-21 | 田中貴金属工業株式会社 | Sputtering target for magnetic recording medium |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61121443A (en) * | 1984-11-19 | 1986-06-09 | Matsushita Electric Ind Co Ltd | Target porcelain for sputtering |
JP4827033B2 (en) | 2004-03-01 | 2011-11-30 | Jx日鉱日石金属株式会社 | Sputtering target with less surface defects and surface processing method thereof |
WO2007080781A1 (en) * | 2006-01-13 | 2007-07-19 | Nippon Mining & Metals Co., Ltd. | Nonmagnetic material particle dispersed ferromagnetic material sputtering target |
JP4962905B2 (en) | 2007-03-12 | 2012-06-27 | 三菱マテリアル株式会社 | Method for producing Co-based sintered alloy sputtering target for forming magnetic recording film with less generation of particles |
WO2009119812A1 (en) | 2008-03-28 | 2009-10-01 | 日鉱金属株式会社 | Sputtering target of nonmagnetic-in-ferromagnetic dispersion type material |
WO2010110033A1 (en) | 2009-03-27 | 2010-09-30 | 日鉱金属株式会社 | Ferromagnetic-material sputtering target of nonmagnetic-material particle dispersion type |
WO2011016365A1 (en) | 2009-08-06 | 2011-02-10 | Jx日鉱日石金属株式会社 | Inorganic particle-dispersed sputtering target |
MY149640A (en) | 2009-12-11 | 2013-09-13 | Jx Nippon Mining & Metals Corp | Sputtering target comprising oxide phase dispersed in co or co alloy phase, magnetic thin film made of co or co alloy phase and oxide phase, and magnetic recording medium using the said thin film |
US20120273347A1 (en) | 2009-12-25 | 2012-11-01 | Jx Nippon Mining & Metals Corporation | Sputtering target with reduced particle generation and method of producing said target |
JP5375707B2 (en) | 2010-03-28 | 2013-12-25 | 三菱マテリアル株式会社 | Sputtering target for forming a magnetic recording film and method for producing the same |
SG185768A1 (en) | 2010-07-20 | 2013-01-30 | Jx Nippon Mining & Metals Corp | Sputtering target of ferromagnetic material with low generation of particles |
WO2012014504A1 (en) | 2010-07-29 | 2012-02-02 | Jx日鉱日石金属株式会社 | Sputtering target for magnetic recording film and process for producing same |
MY156201A (en) | 2010-12-15 | 2016-01-29 | Jx Nippon Mining & Metals Corp | Ferromagnetic sputtering target and method for manufacturing same |
US9605339B2 (en) | 2010-12-21 | 2017-03-28 | Jx Nippon Mining & Metals Corporation | Sputtering target for magnetic recording film and process for production thereof |
CN103270190B (en) | 2010-12-22 | 2016-01-20 | 吉坤日矿日石金属株式会社 | Sinter sputtering target |
SG10201500148WA (en) | 2011-08-23 | 2015-03-30 | Jx Nippon Mining & Metals Corp | Ferromagnetic sputtering target with less particle generation |
WO2013108520A1 (en) * | 2012-01-18 | 2013-07-25 | Jx日鉱日石金属株式会社 | Co-Cr-Pt-BASED SPUTTERING TARGET AND METHOD FOR PRODUCING SAME |
US20140311899A1 (en) | 2012-01-25 | 2014-10-23 | Jx Nippon Mining & Metals Corporation | Ferromagnetic Material Sputtering Target |
US9761422B2 (en) | 2012-02-22 | 2017-09-12 | Jx Nippon Mining & Metals Corporation | Magnetic material sputtering target and manufacturing method for same |
US9793099B2 (en) * | 2012-03-15 | 2017-10-17 | Jx Nippon Mining & Metals Corporation | Magnetic material sputtering target and manufacturing method thereof |
MY185389A (en) | 2013-02-15 | 2021-05-17 | Jx Nippon Mining & Metals Corp | Sputtering target containing co or fe |
JP5946974B1 (en) * | 2014-09-04 | 2016-07-06 | Jx金属株式会社 | Sputtering target |
-
2017
- 2017-03-23 JP JP2018509185A patent/JP6545898B2/en active Active
- 2017-03-23 CN CN201780020247.1A patent/CN108884557B/en active Active
- 2017-03-23 WO PCT/JP2017/011767 patent/WO2017170138A1/en active Application Filing
- 2017-03-23 MY MYPI2018703396A patent/MY189794A/en unknown
- 2017-03-23 SG SG11201807804PA patent/SG11201807804PA/en unknown
- 2017-03-23 US US16/089,454 patent/US10837101B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
WO2017170138A1 (en) | 2017-10-05 |
CN108884557A (en) | 2018-11-23 |
US10837101B2 (en) | 2020-11-17 |
JP6545898B2 (en) | 2019-07-17 |
MY189794A (en) | 2022-03-08 |
US20190106783A1 (en) | 2019-04-11 |
JPWO2017170138A1 (en) | 2019-01-31 |
CN108884557B (en) | 2020-12-08 |
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