MY185389A - Sputtering target containing co or fe - Google Patents
Sputtering target containing co or feInfo
- Publication number
- MY185389A MY185389A MYPI2018703713A MYPI2018703713A MY185389A MY 185389 A MY185389 A MY 185389A MY PI2018703713 A MYPI2018703713 A MY PI2018703713A MY PI2018703713 A MYPI2018703713 A MY PI2018703713A MY 185389 A MY185389 A MY 185389A
- Authority
- MY
- Malaysia
- Prior art keywords
- nonmagnetic material
- grain
- metal
- grains
- distances
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/07—Alloys based on nickel or cobalt based on cobalt
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
- C22C32/001—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides
- C22C32/0015—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides with only single oxides as main non-metallic constituents
- C22C32/0026—Matrix based on Ni, Co, Cr or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C33/00—Making ferrous alloys
- C22C33/02—Making ferrous alloys by powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/002—Ferrous alloys, e.g. steel alloys containing In, Mg, or other elements not provided for in one single group C22C38/001 - C22C38/60
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Powder Metallurgy (AREA)
- Thin Magnetic Films (AREA)
Abstract
The present invention provides a sintered sputtering target, of which structure observed on a polished surface of the target is configured from nonmagnetic material grains having an average grain diameter of 1.8 ?m or less, a metal phase containing Co or Fe in which nonmagnetic material grains are dispersed and metal grains containing Co or Fe; and in which nonmagnetic material grains having a difference of 0.7 ?m or less between a maximum diameter and a minimum diameter is 60% or more of nonmagnetic material grains in a structure observed on the polished surface of the target, defining a maximum diameter as the greatest value of distances between any two points on the outer periphery of the nonmagnetic material grain and a minimum diameter as the smallest value of distances between two parallel lines when the two lines sandwich the grain, and in which one or more metal grains having a sum of the maximum diameter and the minimum diameter of 30 ?m or more are present on average in 1 mm2 field of view, defining a maximum diameter as the greatest value of distances between any two points on the outer periphery of the metal grain, and a minimum diameter as the smallest value of distances between two parallel lines when the two lines sandwich the metal grain. The sintered sputtering target of the present invention can suppress an abnormal discharge due to a nonmagnetic material which may cause particle generation during sputtering. Fig. 1
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013028388 | 2013-02-15 |
Publications (1)
Publication Number | Publication Date |
---|---|
MY185389A true MY185389A (en) | 2021-05-17 |
Family
ID=51353907
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MYPI2018703713A MY185389A (en) | 2013-02-15 | 2014-01-24 | Sputtering target containing co or fe |
MYPI2015702204A MY178171A (en) | 2013-02-15 | 2014-01-24 | Sputtering target containing co or fe |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MYPI2015702204A MY178171A (en) | 2013-02-15 | 2014-01-24 | Sputtering target containing co or fe |
Country Status (6)
Country | Link |
---|---|
JP (2) | JP6332869B2 (en) |
CN (1) | CN104903488B (en) |
MY (2) | MY185389A (en) |
SG (1) | SG11201503676WA (en) |
TW (1) | TWI608114B (en) |
WO (1) | WO2014125897A1 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105056926A (en) * | 2015-07-24 | 2015-11-18 | 武汉纺织大学 | Novel TiO2/WO3 coated magnetic nano composite particles and preparation method therefor and use thereof |
JP6660130B2 (en) * | 2015-09-18 | 2020-03-04 | 山陽特殊製鋼株式会社 | CoFeB alloy target material |
SG11201807804PA (en) | 2016-03-31 | 2018-10-30 | Jx Nippon Mining & Metals Corp | Ferromagnetic material sputtering target |
TWI702294B (en) * | 2018-07-31 | 2020-08-21 | 日商田中貴金屬工業股份有限公司 | Sputtering target for magnetic recording media |
JPWO2021085410A1 (en) * | 2019-11-01 | 2021-05-06 | ||
JP7317741B2 (en) * | 2020-02-07 | 2023-07-31 | Jx金属株式会社 | Sputtering targets, magnetic films, and mixed raw material powders for making sputtering targets |
JP2024010347A (en) * | 2022-07-12 | 2024-01-24 | 田中貴金属工業株式会社 | Co-Cr-Pt-OXIDE BASED SPUTTERING TARGET |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000234168A (en) * | 1998-12-07 | 2000-08-29 | Japan Energy Corp | Sputtering target for forming optical disk protective film |
JP2009001860A (en) * | 2007-06-21 | 2009-01-08 | Mitsubishi Materials Corp | Sputtering target for use in forming film of perpendicular magnetic recording medium having low relative magnetic permeability |
JP5204460B2 (en) * | 2007-10-24 | 2013-06-05 | 三井金属鉱業株式会社 | Sputtering target for magnetic recording film and manufacturing method thereof |
CN102333905B (en) * | 2009-03-27 | 2013-09-04 | 吉坤日矿日石金属株式会社 | Ferromagnetic-material sputtering target of nonmagnetic-material particle dispersion type |
MY149640A (en) * | 2009-12-11 | 2013-09-13 | Jx Nippon Mining & Metals Corp | Sputtering target comprising oxide phase dispersed in co or co alloy phase, magnetic thin film made of co or co alloy phase and oxide phase, and magnetic recording medium using the said thin film |
WO2012011294A1 (en) * | 2010-07-20 | 2012-01-26 | Jx日鉱日石金属株式会社 | Ferromagnetic material sputtering target with little particle generation |
MY156386A (en) * | 2010-08-31 | 2016-02-15 | Jx Nippon Mining & Metals Corp | Fe-pt-based ferromagnetic material sputtering target |
US20130292245A1 (en) * | 2010-12-20 | 2013-11-07 | Jx Nippon Mining & Metals Corporation | FE-PT-Based Ferromagnetic Sputtering Target and Method for Producing Same |
JP5888664B2 (en) * | 2010-12-20 | 2016-03-22 | Jx金属株式会社 | Ferromagnetic sputtering target |
WO2012086388A1 (en) * | 2010-12-22 | 2012-06-28 | Jx日鉱日石金属株式会社 | Sintered body sputtering target |
-
2014
- 2014-01-24 CN CN201480003726.9A patent/CN104903488B/en active Active
- 2014-01-24 WO PCT/JP2014/051494 patent/WO2014125897A1/en active Application Filing
- 2014-01-24 JP JP2015500172A patent/JP6332869B2/en active Active
- 2014-01-24 SG SG11201503676WA patent/SG11201503676WA/en unknown
- 2014-01-24 MY MYPI2018703713A patent/MY185389A/en unknown
- 2014-01-24 MY MYPI2015702204A patent/MY178171A/en unknown
- 2014-01-29 TW TW103103460A patent/TWI608114B/en active
-
2016
- 2016-12-28 JP JP2016254632A patent/JP6359622B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
SG11201503676WA (en) | 2015-06-29 |
TW201443262A (en) | 2014-11-16 |
WO2014125897A1 (en) | 2014-08-21 |
JP2017137570A (en) | 2017-08-10 |
TWI608114B (en) | 2017-12-11 |
CN104903488A (en) | 2015-09-09 |
JP6359622B2 (en) | 2018-07-18 |
MY178171A (en) | 2020-10-06 |
JP6332869B2 (en) | 2018-05-30 |
JPWO2014125897A1 (en) | 2017-02-02 |
CN104903488B (en) | 2018-02-16 |
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