MY185389A - Sputtering target containing co or fe - Google Patents

Sputtering target containing co or fe

Info

Publication number
MY185389A
MY185389A MYPI2018703713A MYPI2018703713A MY185389A MY 185389 A MY185389 A MY 185389A MY PI2018703713 A MYPI2018703713 A MY PI2018703713A MY PI2018703713 A MYPI2018703713 A MY PI2018703713A MY 185389 A MY185389 A MY 185389A
Authority
MY
Malaysia
Prior art keywords
nonmagnetic material
grain
metal
grains
distances
Prior art date
Application number
MYPI2018703713A
Inventor
Atsutoshi Arakawa
Hideo Takami
Yuichiro Nakamura
Original Assignee
Jx Nippon Mining & Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jx Nippon Mining & Metals Corp filed Critical Jx Nippon Mining & Metals Corp
Publication of MY185389A publication Critical patent/MY185389A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C19/00—Alloys based on nickel or cobalt
    • C22C19/07—Alloys based on nickel or cobalt based on cobalt
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C22C32/001—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides
    • C22C32/0015—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides with only single oxides as main non-metallic constituents
    • C22C32/0026—Matrix based on Ni, Co, Cr or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C33/00—Making ferrous alloys
    • C22C33/02—Making ferrous alloys by powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C38/00—Ferrous alloys, e.g. steel alloys
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C38/00—Ferrous alloys, e.g. steel alloys
    • C22C38/002—Ferrous alloys, e.g. steel alloys containing In, Mg, or other elements not provided for in one single group C22C38/001 - C22C38/60
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Powder Metallurgy (AREA)
  • Thin Magnetic Films (AREA)

Abstract

The present invention provides a sintered sputtering target, of which structure observed on a polished surface of the target is configured from nonmagnetic material grains having an average grain diameter of 1.8 ?m or less, a metal phase containing Co or Fe in which nonmagnetic material grains are dispersed and metal grains containing Co or Fe; and in which nonmagnetic material grains having a difference of 0.7 ?m or less between a maximum diameter and a minimum diameter is 60% or more of nonmagnetic material grains in a structure observed on the polished surface of the target, defining a maximum diameter as the greatest value of distances between any two points on the outer periphery of the nonmagnetic material grain and a minimum diameter as the smallest value of distances between two parallel lines when the two lines sandwich the grain, and in which one or more metal grains having a sum of the maximum diameter and the minimum diameter of 30 ?m or more are present on average in 1 mm2 field of view, defining a maximum diameter as the greatest value of distances between any two points on the outer periphery of the metal grain, and a minimum diameter as the smallest value of distances between two parallel lines when the two lines sandwich the metal grain. The sintered sputtering target of the present invention can suppress an abnormal discharge due to a nonmagnetic material which may cause particle generation during sputtering. Fig. 1
MYPI2018703713A 2013-02-15 2014-01-24 Sputtering target containing co or fe MY185389A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013028388 2013-02-15

Publications (1)

Publication Number Publication Date
MY185389A true MY185389A (en) 2021-05-17

Family

ID=51353907

Family Applications (2)

Application Number Title Priority Date Filing Date
MYPI2018703713A MY185389A (en) 2013-02-15 2014-01-24 Sputtering target containing co or fe
MYPI2015702204A MY178171A (en) 2013-02-15 2014-01-24 Sputtering target containing co or fe

Family Applications After (1)

Application Number Title Priority Date Filing Date
MYPI2015702204A MY178171A (en) 2013-02-15 2014-01-24 Sputtering target containing co or fe

Country Status (6)

Country Link
JP (2) JP6332869B2 (en)
CN (1) CN104903488B (en)
MY (2) MY185389A (en)
SG (1) SG11201503676WA (en)
TW (1) TWI608114B (en)
WO (1) WO2014125897A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105056926A (en) * 2015-07-24 2015-11-18 武汉纺织大学 Novel TiO2/WO3 coated magnetic nano composite particles and preparation method therefor and use thereof
JP6660130B2 (en) * 2015-09-18 2020-03-04 山陽特殊製鋼株式会社 CoFeB alloy target material
US10837101B2 (en) 2016-03-31 2020-11-17 Jx Nippon Mining & Metals Corporation Ferromagnetic material sputtering target
TWI702294B (en) * 2018-07-31 2020-08-21 日商田中貴金屬工業股份有限公司 Sputtering target for magnetic recording media
US20220383901A1 (en) * 2019-11-01 2022-12-01 Tanaka Kikinzoku Kogyo K.K. Sputtering target for heat-assisted magnetic recording medium
JP7317741B2 (en) * 2020-02-07 2023-07-31 Ｊｘ金属株式会社 Sputtering targets, magnetic films, and mixed raw material powders for making sputtering targets
JP2024010347A (en) * 2022-07-12 2024-01-24 田中貴金属工業株式会社 Co-Cr-Pt-OXIDE BASED SPUTTERING TARGET

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000234168A (en) * 1998-12-07 2000-08-29 Japan Energy Corp Sputtering target for forming optical disk protective film
JP2009001860A (en) * 2007-06-21 2009-01-08 Mitsubishi Materials Corp Sputtering target for use in forming film of perpendicular magnetic recording medium having low relative magnetic permeability
JP5204460B2 (en) * 2007-10-24 2013-06-05 三井金属鉱業株式会社 Sputtering target for magnetic recording film and manufacturing method thereof
US9103023B2 (en) * 2009-03-27 2015-08-11 Jx Nippon Mining & Metals Corporation Nonmagnetic material particle-dispersed ferromagnetic material sputtering target
MY149640A (en) * 2009-12-11 2013-09-13 Jx Nippon Mining & Metals Corp Sputtering target comprising oxide phase dispersed in co or co alloy phase, magnetic thin film made of co or co alloy phase and oxide phase, and magnetic recording medium using the said thin film
WO2012011294A1 (en) * 2010-07-20 2012-01-26 Jx日鉱日石金属株式会社 Ferromagnetic material sputtering target with little particle generation
JP5226155B2 (en) * 2010-08-31 2013-07-03 Ｊｘ日鉱日石金属株式会社 Fe-Pt ferromagnetic sputtering target
JP5888664B2 (en) * 2010-12-20 2016-03-22 Ｊｘ金属株式会社 Ferromagnetic sputtering target
US20130292245A1 (en) * 2010-12-20 2013-11-07 Jx Nippon Mining & Metals Corporation FE-PT-Based Ferromagnetic Sputtering Target and Method for Producing Same
US20130213802A1 (en) * 2010-12-22 2013-08-22 Jx Nippon Mining & Metals Corporation Sintered Compact Sputtering Target

Also Published As

Publication number Publication date
JP6359622B2 (en) 2018-07-18
TW201443262A (en) 2014-11-16
JP6332869B2 (en) 2018-05-30
JPWO2014125897A1 (en) 2017-02-02
MY178171A (en) 2020-10-06
CN104903488A (en) 2015-09-09
TWI608114B (en) 2017-12-11
WO2014125897A1 (en) 2014-08-21
CN104903488B (en) 2018-02-16
JP2017137570A (en) 2017-08-10
SG11201503676WA (en) 2015-06-29

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