TWI608114B - Sputtering target containing Co or Fe - Google Patents

Sputtering target containing Co or Fe Download PDF

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TWI608114B
TWI608114B TW103103460A TW103103460A TWI608114B TW I608114 B TWI608114 B TW I608114B TW 103103460 A TW103103460 A TW 103103460A TW 103103460 A TW103103460 A TW 103103460A TW I608114 B TWI608114 B TW I608114B
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particles
mol
powder
magnetic material
diameter
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TW201443262A (en
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Atsutoshi Arakawa
Hideo Takami
Yuichiro Nakamura
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Jx Nippon Mining & Metals Corp
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    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C19/00Alloys based on nickel or cobalt
    • C22C19/07Alloys based on nickel or cobalt based on cobalt
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C32/00Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C22C32/001Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides
    • C22C32/0015Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides with only single oxides as main non-metallic constituents
    • C22C32/0026Matrix based on Ni, Co, Cr or alloys thereof
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C33/00Making ferrous alloys
    • C22C33/02Making ferrous alloys by powder metallurgy
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C38/00Ferrous alloys, e.g. steel alloys
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C38/00Ferrous alloys, e.g. steel alloys
    • C22C38/002Ferrous alloys, e.g. steel alloys containing In, Mg, or other elements not provided for in one single group C22C38/001 - C22C38/60
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Powder Metallurgy (AREA)
  • Thin Magnetic Films (AREA)

Description

含有Co或Fe之濺鍍靶 Sputter target containing Co or Fe

本發明係關於一種磁記錄媒體之磁性體薄膜(尤其是採用垂直磁記錄方式之硬碟之磁記錄媒體的粒狀膜(granular film))成膜所使用之磁性材濺鍍靶,並關於一種以Co或Fe作為主成分之非磁性材粒子分散型磁性材濺鍍靶,該濺鍍靶可抑制濺鍍時非磁性材之異常放電(為顆粒(particle)產生之原因)。 The present invention relates to a magnetic material sputtering target used for film formation of a magnetic thin film of a magnetic recording medium (especially a granular film of a magnetic recording medium using a perpendicular magnetic recording type), and A non-magnetic material particle-dispersed magnetic material sputtering target having Co or Fe as a main component, and the sputtering target can suppress abnormal discharge (which is a cause of particles) of the non-magnetic material during sputtering.

採用垂直磁記錄方式之硬碟的記錄層,一直使用以強磁性金屬Co、Fe、Ni作為基底的材料。其中,多使用以Co或Fe作為主成分之Co-Cr系、Co-Pt系、Co-Cr-Pt系、Fe-Pt系等由強磁性合金與非磁性無機材料構成的複合材料。並且,此種硬碟等之磁記錄媒體的磁性薄膜,由於生產性高,故大多係對以上述材料作為成分之強磁性材濺鍍靶進行濺鍍來製作。 A recording layer of a hard disk using a perpendicular magnetic recording method has been using a material having a ferromagnetic metal of Co, Fe, and Ni as a base. Among them, a composite material composed of a ferromagnetic alloy and a non-magnetic inorganic material such as Co-Cr system, Co-Pt system, Co-Cr-Pt system, or Fe-Pt system containing Co or Fe as a main component is often used. Further, since the magnetic film of the magnetic recording medium such as the hard disk has high productivity, it is often produced by sputtering a strong magnetic material sputtering target containing the above material as a component.

作為此種磁記錄媒體用濺鍍靶之製作方法,考慮有熔解法及粉末冶金法。要用哪種方法來製作,由於要根據所要求的特性,因此不能一概而論,但被使用於垂直磁記錄方式硬碟之記錄層的由強磁性合金與非磁性無機物粒子構成的濺鍍靶,一般是用粉末冶金法來加以製作。其原因在於:需要將無機物粒子均勻地分散在合金基質中,故若以熔解法的話,則會難以製作。 As a method of producing such a sputtering target for a magnetic recording medium, a melting method and a powder metallurgy method are considered. Which method is used for the production, because it is based on the required characteristics, it cannot be generalized, but a sputtering target composed of a ferromagnetic alloy and non-magnetic inorganic particles used in a recording layer of a perpendicular magnetic recording type hard disk is generally used. It is made by powder metallurgy. This is because it is necessary to uniformly disperse the inorganic particles in the alloy matrix, so that it is difficult to produce by the melting method.

作為粉末冶金法,例如,於專利文獻1提出有下述之方法:混合Co粉末、Cr粉末、TiO2粉末及SiO2粉末,然後用行星運動型混合機將此混合所得之混合粉末與Co球形粉末加以混合,再藉由熱壓將此混合粉末加以成形,而得到磁記錄媒體用濺鍍靶。 As a powder metallurgy method, for example, Patent Document 1 proposes a method of mixing Co powder, Cr powder, TiO 2 powder, and SiO 2 powder, and then mixing the mixed powder and Co sphere with a planetary motion type mixer. The powder was mixed, and the mixed powder was molded by hot pressing to obtain a sputtering target for a magnetic recording medium.

此情形之靶組織,係呈在均勻分散有無機物粒子之金屬基質相(A)中,具有球形相(B)的樣子(參考專利文獻2之圖1)。此種組織雖然在提升漏磁通的方面佳,但從抑制濺鍍時產生顆粒的方面來看,並不能被稱為是好的磁記錄媒體用濺鍍靶。 The target structure in this case is a state in which the spherical phase (B) is present in the metal matrix phase (A) in which the inorganic particles are uniformly dispersed (refer to FIG. 1 of Patent Document 2). Although such a structure is preferable in terms of improving the leakage flux, it cannot be said to be a good sputtering target for a magnetic recording medium from the viewpoint of suppressing generation of particles during sputtering.

又,於專利文獻2提出有下述之方法:混合Co-Cr二元系合金粉末與Pt粉末及SiO2粉末,對所製得之混合粉末進行熱壓,藉此得到磁記錄媒體薄膜形成用濺鍍靶。 Further, Patent Document 2 proposes a method of mixing a Co-Cr binary alloy powder, a Pt powder, and a SiO 2 powder, and subjecting the obtained mixed powder to hot pressing to obtain a magnetic recording medium film. Sputter target.

此情形之靶組織,雖然沒有圖示,但記載有可看見Pt相、SiO2相及Co-Cr二元系合金相,在Co-Cr二元系合金相的周圍可觀察到擴散層。此種組織亦不能被稱為是好的磁記錄媒體用濺鍍靶。 Although the target structure in this case is not shown, it is described that the Pt phase, the SiO 2 phase, and the Co-Cr binary alloy phase are visible, and a diffusion layer can be observed around the Co-Cr binary alloy phase. Such an organization cannot be said to be a good sputtering target for magnetic recording media.

進一步於專利文獻3提出一種由Co、Pt之母相與平均粒徑在0.05μm以上且未達7.0μm之金屬氧化物相構成的濺鍍靶,說是可抑制結晶粒成長,得到磁導率低、高密度之靶,提升成膜效率。 Further, Patent Document 3 proposes a sputtering target comprising a mother phase of Co and Pt and a metal oxide phase having an average particle diameter of 0.05 μm or more and less than 7.0 μm, which is capable of suppressing crystal grain growth and obtaining magnetic permeability. Low and high density targets enhance filming efficiency.

其他,於專利文獻4記載有一種使氧化物相形成之粒子的平均粒徑在3μm以下,於專利文獻5記載有:當使二氧化矽粒子或二氧化鈦粒子於垂直於濺鍍靶主表面的剖面中,垂直於濺鍍靶主表面之方向的粒徑為Dn,平行於該主表面之方向的粒徑為Dp時,滿足2≦Dp/Dn。 Further, Patent Document 4 discloses that the average particle diameter of the particles forming the oxide phase is 3 μm or less, and Patent Document 5 describes that the ceria particles or the titanium oxide particles are perpendicular to the main surface of the sputtering target. In the case where the particle diameter perpendicular to the main surface of the sputtering target is Dn, and the particle diameter parallel to the main surface is Dp, 2≦Dp/Dn is satisfied.

然而,此等條件皆不夠足夠,目前正要求進一步的改善。 However, these conditions are not sufficient and are currently requiring further improvement.

專利文獻1:國際公開第2011/089760號小冊子 Patent Document 1: International Publication No. 2011/089760

專利文獻2:日本特開2009-1860號公報 Patent Document 2: JP-A-2009-1860

專利文獻3:日本特開2009-102707號公報 Patent Document 3: Japanese Laid-Open Patent Publication No. 2009-102707

專利文獻4:日本特開2009-215617號公報 Patent Document 4: Japanese Laid-Open Patent Publication No. 2009-215617

專利文獻5:日本特開2011-222086號公報 Patent Document 5: Japanese Laid-Open Patent Publication No. 2011-222086

專利文獻6:日本特願2012-036562 Patent Document 6: Japan's Special Wish 2012-036562

通常,以Co或Fe作為主成分之非磁性材粒子分散型強磁性材濺鍍靶中,由於含有之SiO2、Cr2O3、TiO2等之非磁性材為絶緣體,故會成為異常放電之原因。並且,此異常放電會造成濺鍍過程中產生顆粒此一問題。 In general, a non-magnetic material particle-dispersed ferromagnetic material sputtering target containing Co or Fe as a main component is an insulator because the non-magnetic material such as SiO 2 , Cr 2 O 3 or TiO 2 is contained as an insulator. The cause of the discharge. Moreover, this abnormal discharge causes the problem of particles generated during the sputtering process.

本發明有鑑於上述問題,其課題在於:維持高PTF,同時抑制上述非磁性材之異常放電,減少因異常放電造成濺鍍過程中產生顆粒。至目前為止,雖然可藉由縮小非磁性材粒子之粒徑,而減低異常放電之機率,但隨著磁記錄媒體記錄密度的提升,容許的顆粒程度越趨嚴格,因此課題在於提供一種更進一步獲得改善之非磁性材粒子分散型強磁性材濺鍍靶。 The present invention has been made in view of the above problems, and it is an object of the invention to maintain high PTF while suppressing abnormal discharge of the non-magnetic material and to reduce generation of particles during sputtering by abnormal discharge. Although the probability of abnormal discharge can be reduced by reducing the particle size of the non-magnetic material particles up to now, as the recording density of the magnetic recording medium increases, the degree of allowable particles becomes stricter, and therefore the object is to provide a further improvement. An improved non-magnetic material particle-dispersed ferromagnetic material sputtering target is obtained.

為了解決上述課題,本發明人等經潛心研究的結果,發現藉由調整靶的組織(非磁性材粒子)構造,而不會發生濺鍍時非磁性材導致的異常放電,可得到顆粒產生少之靶。 In order to solve the problem, the inventors of the present invention have found that by adjusting the structure of the target (non-magnetic material particles), abnormal discharge due to non-magnetic materials during sputtering does not occur, and it is possible to obtain less particles. The target.

根據此種見解,本發明提供以下之發明。 Based on this finding, the present invention provides the following invention.

1)一種濺鍍靶,係由非磁性材粒子分散於含有Co或Fe之磁性材中的材料構成的燒結體濺鍍靶,其特徵在於:於該靶中之研磨面所觀察到的組織,係由平均粒徑1.8μm以下之非磁性材粒子、與分散有該非磁性材粒子之含有Co或Fe的金屬相及金屬粒構成,當以位於該非磁性材粒子外緣上任意2點之距離的最大值為最大徑,以平行之2條直線夾持該粒子時2直線間之距離的最小值為最小徑之情形時,其最大徑與最小徑之差在0.7μm以下的非磁性材粒子佔該靶中之研磨面所觀察到之組織內的非磁性材粒子的60%以上,且當以位於該金屬粒外緣上任意2點之距離的最大值為最大徑,以平行之2條直線夾持該金屬粒時2直線間之距離的最小值為最小徑之情形時,其最大徑與最小徑之和在30μm以上的金屬粒,於1mm2視野內,平均存在1個以上。 1) A sputtering target which is a sintered sputtering target composed of a material in which non-magnetic material particles are dispersed in a magnetic material containing Co or Fe, and is characterized in that the structure observed on the polished surface of the target is It is composed of non-magnetic material particles having an average particle diameter of 1.8 μm or less, a metal phase containing Co or Fe in which the non-magnetic material particles are dispersed, and metal particles, and is located at a distance of any two points on the outer edge of the non-magnetic material particles. The maximum value is the maximum diameter. When the minimum value of the distance between the two straight lines is the minimum diameter when the particles are held in parallel with two straight lines, the non-magnetic material particles having a difference between the maximum diameter and the minimum diameter of 0.7 μm or less are occupied. 60% or more of the non-magnetic material particles in the microstructure observed in the polished surface of the target, and the maximum diameter of the distance between any two points on the outer edge of the metal particle is the maximum diameter, and two straight lines in parallel When the minimum value of the distance between the two straight lines is the minimum diameter when the metal particles are sandwiched, the metal particles having a maximum diameter and a minimum diameter of 30 μm or more have an average of one or more in a field of view of 1 mm 2 .

2)如上述1)記載之濺鍍靶,其中,該非磁性材粒子為選自B2O3、CoO、Co3O4、MnO、Mn3O4、SiO2、SnO2、TiO2、Ti2O3、Cr2O3,Ta2O5、WO2、WO3、ZrO2中一種以上之氧化物,此等之含量為0.5~20mol%。 (2) The sputtering target according to the above 1), wherein the non-magnetic material particles are selected from the group consisting of B 2 O 3 , CoO, Co 3 O 4 , MnO, Mn 3 O 4 , SiO 2 , SnO 2 , TiO 2 , Ti One or more oxides of 2 O 3 , Cr 2 O 3 , Ta 2 O 5 , WO 2 , WO 3 , and ZrO 2 , and the content thereof is 0.5 to 20 mol%.

3)如上述1)或2)記載之濺鍍靶,其中,Cr在0mol%以上15mol%以下,Pt在5mol%以上30mol%以下,不包括非磁性材料,剩餘部分為Co及不可避免之雜質。 (3) The sputtering target according to the above 1) or 2), wherein Cr is 0 mol% or more and 15 mol% or less, Pt is 5 mol% or more and 30 mol% or less, excluding a nonmagnetic material, and the remainder is Co and an unavoidable impurity. .

4)如上述3)記載之濺鍍靶,其進一步含有0.5mol%以上12mol%以下之選自Mg、Al、Si、Mn、Nb、Mo、Ru、Pd、Ta、W、B中一種以上之元素。 (4) The sputtering target according to the above 3), which further contains 0.5 mol% or more and 12 mol% or less of at least one selected from the group consisting of Mg, Al, Si, Mn, Nb, Mo, Ru, Pd, Ta, W, and B. element.

5)如上述1)~4)中任一項記載之濺鍍靶,其中,該金屬粒由Co或Fe構成。 The sputtering target according to any one of the above 1 to 4, wherein the metal particles are composed of Co or Fe.

經以此方式調整之本發明之非磁性材粒子分散型磁性材濺鍍靶,可得到下述之靶:維持高PTF,同時不會發生濺鍍時非磁性材導致的異常放電,且顆粒產生少。藉此而具有下述優異之效果:可得到因提升產率而改善成本的效果。 By the non-magnetic material particle-dispersed magnetic material sputtering target of the present invention adjusted in this manner, the following target can be obtained: maintaining high PTF without abnormal discharge caused by non-magnetic material during sputtering, and particle generation less. Thereby, there is an excellent effect that an effect of improving the cost by improving the yield can be obtained.

圖1,係顯示實施例1之Co-Pt-Cr-SiO2-TiO2-Cr2O3靶組織之圖(照片)。 Fig. 1 is a view (photograph) showing the target structure of Co-Pt-Cr-SiO 2 -TiO 2 -Cr 2 O 3 of Example 1.

圖2,係顯示實施例1之靶的非磁性材粒子分散於金屬相的組織之圖(圖1之擴大照片)。 Fig. 2 is a view showing a structure in which non-magnetic material particles of the target of Example 1 are dispersed in a metal phase (an enlarged photograph of Fig. 1).

圖3,為了使非磁性材粒子之輪郭清楚而對圖2進行影像解析處理後(二值化處理)之圖。 Fig. 3 is a view showing the image analysis processing (binarization processing) of Fig. 2 in order to make the non-magnetic material particles clear.

圖4,係顯示實施例2之Co-Pt-Ru-Ta-SiO2-TiO2-CoO-B2O3靶組織之圖(照片)。 Fig. 4 is a view (photograph) showing the target structure of Co-Pt-Ru-Ta-SiO 2 -TiO 2 -CoO-B 2 O 3 of Example 2.

圖5,係顯示實施例2之靶的非磁性材粒子分散於金屬相的組織之圖(圖4之擴大照片)。 Fig. 5 is a view showing a structure in which non-magnetic material particles of the target of Example 2 are dispersed in a metal phase (an enlarged photograph of Fig. 4).

本發明之濺鍍靶,係由非磁性材粒子分散於含有Co或Fe之磁性材中的材料構成的燒結體濺鍍靶,於靶中之研磨面所觀察到的組織,係由平均粒徑1.8μm以下之非磁性材粒子、與分散有前述非磁性材粒 子之含有Co或Fe的金屬相及金屬粒構成。藉由使非磁性材粒子之大小在平均粒徑1.8μm以下,而可抑制顆粒的產生。 The sputtering target of the present invention is a sintered sputtering target in which a non-magnetic material particle is dispersed in a material containing Co or Fe, and the structure observed on the polished surface of the target is an average particle diameter. Non-magnetic material particles of 1.8 μm or less and dispersed with the aforementioned non-magnetic material particles It is composed of a metal phase containing Co or Fe and metal particles. By making the size of the non-magnetic material particles to have an average particle diameter of 1.8 μm or less, generation of particles can be suppressed.

本發明人等以前曾得到下述見解:非磁性材粒子之形狀宜為圓球狀,非磁性材粒子之形狀至少接近圓球狀之形狀,係可防止發生顆粒之有效手段(專利文獻6)。 The inventors of the present invention have previously found that the shape of the non-magnetic material particles is preferably spherical, and the shape of the non-magnetic material particles is at least close to a spherical shape, which is an effective means for preventing generation of particles (Patent Document 6). .

亦即,為了提升磁性質,存在一定量之氧化物(非磁性材)是必要的,但若其為不同形狀,則在靶表面之一定面積中存在氧化物之場所與不存在氧化物之場所,分布會產生差異,變得容易產生偏析。得到下述見解:若為圓球或接近圓球之氧化物粒子,則由於粒子形狀一致,故偏析會變少,可有效地抑制發生顆粒。 That is, in order to improve the magnetic properties, it is necessary to have a certain amount of oxide (non-magnetic material), but if it is a different shape, a place where an oxide exists in a certain area of the target surface and a place where no oxide exists The distribution will make a difference and become prone to segregation. It has been found that if the particles are spherical or close to the oxide particles of the sphere, since the particle shape is uniform, segregation is reduced, and generation of particles can be effectively suppressed.

本發明依上述見解,當使位於靶中之研磨面所觀察到的非磁性材粒子外緣上任意2點之距離的最大值為最大徑,以平行之2條直線夾持該粒子時2直線間之距離的最小值為最小徑之情形時,其最大徑與最小徑之差在0.7μm以下。 According to the above findings, the maximum value of the distance between any two points on the outer edge of the non-magnetic material particles observed on the polished surface of the target is the maximum diameter, and the two straight lines are held by the two parallel lines. When the minimum value of the distance between the two is the minimum diameter, the difference between the maximum diameter and the minimum diameter is 0.7 μm or less.

又,此種非磁性材粒子宜佔靶的大部分,亦即宜佔60%以上,較佳為90%以上,更佳為100%。藉此,可大幅抑制顆粒的產生。 Further, such non-magnetic material particles preferably occupy most of the target, i.e., preferably 60% or more, preferably 90% or more, more preferably 100%. Thereby, the generation of particles can be greatly suppressed.

本發明於上述見解進一步發現新的見解,故不僅非磁性材粒子之形態,更對含有Co或Fe之金屬粒的形態加以特定,藉此可抑制異常放電,並可進一步大幅抑制顆粒的產生。 Further, since the present invention has found new insights from the above findings, not only the form of the non-magnetic material particles but also the form of the metal particles containing Co or Fe is specified, whereby abnormal discharge can be suppressed, and generation of particles can be further suppressed.

亦即,其特徵在於:當使位於靶中之研磨面所觀察到的金屬粒外緣上任意2點之距離的最大值為最大徑,以平行之2條直線夾持該粒子時2直線間之距離的最小值為最小徑之情形時,其最大徑與最小徑之和在30μm 以上的金屬粒,於1mm2視野內,平均存在1個以上,且較佳為平均存在3個以上,更佳為平均存在5個以上。 That is, the maximum value of the distance between any two points on the outer edge of the metal particle observed on the polished surface located in the target is the maximum diameter, and the two straight lines are used to sandwich the particle. When the minimum value of the distance is the minimum diameter, the metal particles having a maximum diameter to the minimum diameter of 30 μm or more have an average of one or more in a field of view of 1 mm 2 , and preferably have an average of three or more. There are more than 5 on average.

另,於本發明,用顯微鏡觀察靶面內之任意5個部位,計數各處1mm2視野內之最大徑與最小徑之和在30μm以上的金屬粒數目,從其合計求出平均個數。 Further, in the present invention, any five sites in the target surface are observed with a microscope, and the number of metal particles having a maximum diameter to a minimum diameter of 30 μm or more in a field of view of 1 mm 2 is counted, and the average number is obtained from the total.

當以位於金屬粒外緣上任意2點之距離的最大值為最大徑,以平行之2條直線夾持該金屬粒時2直線間之距離的最小值為最小徑之情形時,若其最大徑與最小徑之和在30μm以上,於1mm2視野內,平均存在1個以上,則漏磁通會變大。因此,於磁控濺鍍裝置使用時,可有效率地促進非活性性氣體之電離,而得到穩定之放電。 When the maximum value of the distance between any two points on the outer edge of the metal particle is the maximum diameter, and the minimum value of the distance between the two lines is the minimum diameter when the metal particles are held by two parallel lines, if it is the largest When the sum of the diameter and the minimum diameter is 30 μm or more, and there is an average of one or more in the field of view of 1 mm 2 , the leakage magnetic flux becomes large. Therefore, in the use of the magnetron sputtering apparatus, the ionization of the inert gas can be efficiently promoted to obtain a stable discharge.

另一方面,當以位於金屬粒外緣上任意2點之距離的最大值為最大徑,以平行之2條直線夾持該金屬粒時2直線間之距離的最小值為最小徑之情形時,其最大徑與最小徑之和小於30μm,或者30μm以上之金屬粒於1mm2視野內平均存在不到1個時,幾乎得不到上述效果。 On the other hand, when the maximum value of the distance between any two points on the outer edge of the metal particle is the maximum diameter, and the minimum value of the distance between the two straight lines is the minimum diameter when the metal particles are held by two straight lines in parallel When the sum of the largest diameter and the minimum diameter is less than 30 μm, or when the metal particles of 30 μm or more have an average of less than one in the field of 1 mm 2 , the above effects are hardly obtained.

又,若前述最大徑與最小徑之和在50μm以上,則雖然上述之效果會更加強,但若前述最大徑與最小徑之和超過300μm,則有時氧化物粒子之存在分布會不均。 In addition, when the sum of the maximum diameter and the minimum diameter is 50 μm or more, the above effect is further enhanced. However, when the sum of the maximum diameter and the minimum diameter exceeds 300 μm, the distribution of oxide particles may be uneven.

本發明之強磁性材濺鍍靶,對於Co-Cr系合金、Co-Pt系合金、Co-Cr-Pt系合金等之Co系合金或Fe-Pt系合金等之Fe系合金尤其有效,但本發明,可適用於已公知的強磁性材,作為磁記錄媒體所需要之成分的摻合比例可視目的適當調整。 The ferromagnetic material sputtering target of the present invention is particularly effective for a Fe-based alloy such as a Co-Cr alloy, a Co-Pt-based alloy, a Co-Cr-Pt-based alloy, or a Fe-based alloy such as a Fe-Pt-based alloy, but The present invention can be applied to a well-known ferromagnetic material, and the blending ratio of the components required as a magnetic recording medium can be appropriately adjusted depending on the purpose.

作為Co系合金,可製成Cr在0mol%以上15mol%以下,Pt在5mol% 以上30mol%以下,不包括非磁性材料,剩餘部分由Co及不可避免之雜質構成的濺鍍靶。作為Fe系合金,則可製成Pt超過0mol%且在60mol%以下,不包括非磁性材料,剩餘部分由Fe及不可避免之雜質構成的濺鍍靶。 As a Co-based alloy, Cr can be made 0 mol% or more and 15 mol% or less, and Pt is 5 mol%. The above 30 mol% or less does not include a non-magnetic material, and the remainder is a sputtering target composed of Co and unavoidable impurities. As the Fe-based alloy, a sputtering target in which Pt exceeds 0 mol% and is 60 mol% or less, does not include a non-magnetic material, and the remainder is composed of Fe and unavoidable impurities can be obtained.

此等之成分組成,僅是顯示用以活用作為強磁性材之特性的較佳數值範圍,當然可適用其他之數值。 The composition of these components is merely a preferred range of values for the purpose of utilizing the properties as a ferromagnetic material, and of course other values are applicable.

添加於前述強磁性材之非磁性材係選自B2O3、CoO、Co3O4、MnO、Mn2O3、SiO2、TiO2、Ti2O3、Cr2O3,Ta2O5、WO2、WO3、ZrO2中的一種以上氧化物,通常,在靶中此等之含量為0.5~20mol%。此等之氧化物,可根據所需之強磁性膜的種類,任意選擇添加。上述添加量係為了發揮添加效果的有效量。 The non-magnetic material added to the above ferromagnetic material is selected from the group consisting of B 2 O 3 , CoO, Co 3 O 4 , MnO, Mn 2 O 3 , SiO 2 , TiO 2 , Ti 2 O 3 , Cr 2 O 3 , Ta 2 . One or more oxides of O 5 , WO 2 , WO 3 , and ZrO 2 are usually contained in the target in an amount of 0.5 to 20 mol%. These oxides can be arbitrarily selected depending on the type of ferromagnetic film required. The above added amount is an effective amount for exerting an additive effect.

又,本發明之濺鍍靶,可添加0.5~12mol%之選自Mg、Al、Si、Mn、Nb、Mo、Ru、Pd、Ta、W、B中的一種以上元素。此等係為了提升作為磁記錄媒體之特性,而視需要添加的元素。前述添加量係為了發揮添加效果的有效量。 Further, in the sputtering target of the present invention, 0.5 to 12 mol% of one or more elements selected from the group consisting of Mg, Al, Si, Mn, Nb, Mo, Ru, Pd, Ta, W, and B may be added. These are elements that are added as needed in order to enhance the characteristics of the magnetic recording medium. The amount of addition described above is an effective amount for exerting an effect of addition.

又,本發明之濺鍍靶組織,係由非磁性材粒子、與分散有非磁性材粒子之含有Co或Fe的金屬相及金屬粒構成,該金屬粒較佳由Co或Fe構成。 Further, the sputtering target structure of the present invention is composed of non-magnetic material particles, a metal phase containing Co or Fe in which non-magnetic material particles are dispersed, and metal particles, and the metal particles are preferably composed of Co or Fe.

該金屬粒之最大磁導率高於組成不同之金屬基質(分散有非磁性材粒子之金屬相),且呈各金屬粒被由金屬基質構成之周圍組織分離的構造。於具有此種組織之靶,漏磁場獲得提升之理由目前雖未必清楚,但認為其原因在於:在靶內部之磁通會產生較密集之部分與較稀疏之部分,與具有均一磁導率之組織相比,由於靜磁能會變較高,故磁通洩漏至靶外部,在能 量上較為有利。 The maximum magnetic permeability of the metal particles is higher than a metal matrix having different compositions (a metal phase in which non-magnetic material particles are dispersed), and a structure in which each metal particle is separated by a surrounding structure composed of a metal matrix. The reason why the leakage magnetic field is improved in the target of such a structure is not necessarily clear at present, but it is considered that the reason is that the magnetic flux inside the target generates a denser portion and a more sparse portion, and has a uniform magnetic permeability. Compared with the tissue, since the magnetostatic energy becomes higher, the magnetic flux leaks to the outside of the target. It is more advantageous in quantity.

本發明之濺鍍靶,可藉由粉末冶金法來製作。於粉末冶金法之情形時,不包括後述之金屬粗粉,係準備Co、Cr、Pt、Fe等之金屬原料粉與SiO2等之非磁性材原料粉,及視需要之Ru等添加金屬粉。原料之粒度,金屬粉宜使用平均粒徑在10μm以下者,非磁性材粉在5μm以下者。非磁性材原料粉儘可能接近球狀,較容易達成本發明之微細組織。又,亦可準備此等金屬之合金粉末代替各金屬元素之粉末。另,粉末之粒徑可用雷射繞射式粒度分布計(HORIBA LA-920)測量。 The sputtering target of the present invention can be produced by powder metallurgy. In the case of the powder metallurgy method, the metal coarse powder described later is not included, and the metal raw material powder such as Co, Cr, Pt, Fe, etc., and the non-magnetic raw material powder such as SiO 2 are prepared, and the metal powder such as Ru is added as needed. . The particle size of the raw material is preferably such that the average particle diameter is 10 μm or less and the non-magnetic material powder is 5 μm or less. The non-magnetic material raw material powder is as close as possible to a spherical shape, and it is easier to achieve the fine structure of the present invention. Further, alloy powders of these metals may be prepared in place of the powder of each metal element. Alternatively, the particle size of the powder can be measured using a laser diffraction particle size distribution meter (HORIBA LA-920).

然後,將此等之金屬粉末及合金粉末秤量成想要的組成,使用球磨機等公知方法進行混合兼粉碎。為了縮短混合時間提高生產性,較佳使用高能量球磨機。此處,關於金屬原料粉,較佳少量混合至少1種成分之金屬粗粉,該金屬粗粉之粒徑在50μm以上300μm以下之範圍。此時,在維持粒徑上,較佳在使用球磨機長時間混合後進行添加,或者使用如攪拌機(mixer)不具粉碎性溫和的混合機進行混合。或者,亦可在球磨機混合之中途進行添加,進行短時間之球磨混合。藉此,金屬粒會成為扁平狀,長徑與短徑之差會變大。 Then, these metal powders and alloy powders are weighed into a desired composition, and mixed and pulverized by a known method such as a ball mill. In order to shorten the mixing time and improve productivity, it is preferred to use a high energy ball mill. Here, as for the metal raw material powder, a metal coarse powder of at least one component is preferably mixed in a small amount, and the particle diameter of the metal coarse powder is in the range of 50 μm or more and 300 μm or less. At this time, in order to maintain the particle diameter, it is preferable to carry out the addition after mixing for a long time using a ball mill, or to mix using a mixer which is not pulverizing and mild, such as a mixer. Alternatively, it may be added during the mixing of the ball mill to perform ball milling for a short period of time. Thereby, the metal particles become flat, and the difference between the long diameter and the short diameter becomes large.

以上述方式雖然可使金屬粒為球形或扁平狀(片狀),但該球形或扁平狀之金屬粒,具備各形狀之優缺點。該形狀之選擇,宜視靶之使用目的來加以選擇。 Although the metal particles may be spherical or flat (sheet-like) in the above manner, the spherical or flat metal particles have advantages and disadvantages of the respective shapes. The choice of the shape should be selected according to the purpose of use of the target.

具體而言,當以燒結法製作靶原材料時,球形較不易在金屬基質(A)與相(B)之界面產生空孔,而可提高靶之密度。又,於相同體積下,由於球形表面積較小,故對靶原材料進行燒結時,在金屬基質(A)與相(B) 之間金屬元素較不易擴散。另,此處之球形係指包含圓球、擬似圓球、扁球(旋轉橢圓體)、擬似扁球之立體形狀。皆是指長軸與短軸之差為0~50%者。 Specifically, when the target material is produced by the sintering method, the spherical shape is less likely to generate voids at the interface between the metal matrix (A) and the phase (B), and the density of the target can be increased. Moreover, in the same volume, since the spherical surface area is small, when the target raw material is sintered, the metal substrate (A) and the phase (B) are Metal elements are less likely to diffuse. In addition, the spherical shape herein refers to a three-dimensional shape including a sphere, a quasi-spherical sphere, a flat sphere (rotating ellipsoid), and a pseudo-ball. Both refer to the difference between the long axis and the short axis of 0 to 50%.

另一方面,使金屬粒為扁平狀之情形時,正如楔子之效果,具有防止在濺鍍時金屬粒自周圍之金屬基質(A)脫離之效果。並且,藉由破壞球形,可減輕於球形時容易產生之濺蝕速度不均,而可抑制因濺蝕速度不同之邊界所造成之顆粒的發生。 On the other hand, when the metal particles are flat, as the effect of the wedge, there is an effect of preventing the metal particles from being detached from the surrounding metal substrate (A) during sputtering. Further, by destroying the spherical shape, the unevenness of the sputtering speed which is likely to occur in the spherical shape can be alleviated, and the occurrence of particles due to the boundary at which the sputtering speed is different can be suppressed.

於本發明中,重要的是如先前所述,當以位於靶中之研磨面所觀察到的組織內之非磁性材粒子外緣上任意2點之距離的最大值為最大徑,以平行之2條直線夾持該粒子時2直線間之距離的最小值為最小徑之情形時,使最大徑與最小徑之差在0.7μm以下。 In the present invention, it is important that, as described earlier, the maximum value of the distance between any two points on the outer edge of the non-magnetic material particles in the tissue observed by the abrasive surface located in the target is the maximum diameter, in parallel. When the minimum value of the distance between two straight lines is the minimum diameter when the two particles are held by two straight lines, the difference between the maximum diameter and the minimum diameter is 0.7 μm or less.

又,於本發明中,尤其重要的是當以位於靶中之研磨面所觀察到的金屬粒外緣上任意2點之距離的最大值為最大徑,以平行之2條直線夾持該金屬粒時2直線間之距離的最小值為最小徑之情形時,其最大徑與最小徑之和在30mm以上的金屬粒,於1mm2視野內,平均存在1個以上。 Further, in the present invention, it is particularly important that the maximum value of the distance between any two points on the outer edge of the metal particle observed by the polished surface located in the target is the maximum diameter, and the metal is held in parallel with two straight lines. When the minimum value of the distance between the straight lines in the grain 2 is the minimum diameter, the metal particles having a maximum diameter and a minimum diameter of 30 mm or more have an average of one or more in a field of view of 1 mm 2 .

最大徑與最小徑之算出,係將靶中之研磨面的顯微鏡影像放映至PC,使用影像處理解析軟體來進行。影像解析處理軟體係使用其恩斯(KEYENCE)公司製形狀解析軟體(VK-Analyzer VK-H1A1)。 The calculation of the maximum diameter and the minimum diameter is performed by projecting a microscope image of the polished surface in the target to the PC and using the image processing analysis software. The image analysis processing software system uses the shape analysis software (VK-Analyzer VK-H1A1) manufactured by KEYENCE.

使用熱壓或熱靜水壓對以上述方式製得之混合粉進行燒結。雖亦取決於靶之成分組成,但藉由設定上述原料之混合條件、燒結條件,而發現非磁性材粒子變成圓球狀之條件及金屬粒變成扁平狀之條件,若將其製造條件固定,則可一直得到此種分散有非磁性材粒子及金屬粒之 燒結體靶。 The mixed powder obtained in the above manner is sintered using hot pressing or hot hydrostatic pressure. In addition, depending on the composition of the target, the conditions for the non-magnetic material particles to be spherical and the conditions for the metal particles to be flat are found by setting the mixing conditions and sintering conditions of the above-mentioned raw materials, and if the manufacturing conditions are fixed, This kind of non-magnetic material particles and metal particles can be obtained all the time. Sintered body target.

實施例 Example

以下,根據實施例及比較例進行說明。另,本實施例僅為一例示,並不受此例示的任何限制。亦即,本發明僅受申請專利範圍的限制,而包含本發明所含之實施例以外的各種變形。 Hereinafter, description will be given based on examples and comparative examples. In addition, this embodiment is only an example and is not limited by this illustration. That is, the present invention is only limited by the scope of the claims, and includes various modifications other than the embodiments included in the present invention.

(實施例1) (Example 1)

準備平均粒徑4μm之Co粉末、平均粒徑5μm之Cr粉末、平均粒徑3μm之Pt粉末作為金屬原料粉末,且準備平均粒徑1.2μm之TiO2粉末、平均粒徑0.7μm之球形SiO2粉末、平均粒徑1μm之Cr2O3粉末作為非磁性材粉末。又,準備粒徑經調整成50μm以上150μm以下之範圍的Co粗粉,以重量比計,使平均粒徑4μm之Co粉末與前述Co粗粉的比率為7:3。以下述組成比,秤量2000g此等粉末。 Co powder having an average particle diameter of 4 μm, Cr powder having an average particle diameter of 5 μm, and Pt powder having an average particle diameter of 3 μm were prepared as a metal raw material powder, and TiO 2 powder having an average particle diameter of 1.2 μm and spherical SiO 2 having an average particle diameter of 0.7 μm were prepared. A powder, a Cr 2 O 3 powder having an average particle diameter of 1 μm was used as the non-magnetic material powder. Further, a Co coarse powder having a particle diameter adjusted to a range of 50 μm or more and 150 μm or less was prepared, and the ratio of the Co powder having an average particle diameter of 4 μm to the Co coarse powder was 7:3 by weight. 2000 g of these powders were weighed in the following composition ratio.

組成:69Co-18Pt-2Cr-5SiO2-2TiO2-4Cr2O3(mol%) Composition: 69Co-18Pt-2Cr-5SiO 2 -2TiO 2 -4Cr 2 O 3 (mol%)

接著,除了Co粗粉之外,將秤量之粉末與粉碎媒體之鎢合金磨球一起封閉在容量10公升的球磨鍋(ball mill pot),旋轉120小時進行混合。然後,將Co粗粉放入球磨鍋,混合1小時。將以此方式製得之混合粉填充於碳製模具,於真空環境中,在溫度1100℃、保持時間2小時、加壓力30MPa的條件下,進行熱壓而得到燒結體。進一步以車床對該燒結體進行切削加工,而得到直徑為180mm、厚度為5mm的圓盤狀靶。 Next, in addition to the Co coarse powder, the weighed powder was sealed with a tungsten alloy grinding ball of a pulverizing medium in a ball mill pot having a capacity of 10 liters, and rotated for 120 hours to be mixed. Then, the Co coarse powder was placed in a ball mill and mixed for 1 hour. The mixed powder obtained in this manner was filled in a carbon mold, and hot pressed at a temperature of 1,100 ° C, a holding time of 2 hours, and a pressing force of 30 MPa in a vacuum atmosphere to obtain a sintered body. Further, the sintered body was cut by a lathe to obtain a disk-shaped target having a diameter of 180 mm and a thickness of 5 mm.

測量以此方式製得之靶的平均漏磁通密度,結果為30%。另,漏磁通之測量係依ASTM F2086-01(Standard Test Method for Pass Through Flux of Circular Magnetic Sputtering Targets,Method 2)來實施。具體 而言,係固定靶的中心,將旋轉0度、30度、60度、90度、120度測得之漏磁通密度除以ASTM所定義之reference field之值,乘以100後,以百分比表示。然後,以此等5點平均之結果作為平均漏磁通密度(%)。 The average leakage flux density of the target produced in this manner was measured and found to be 30%. In addition, the measurement of the leakage flux is carried out in accordance with ASTM F2086-01 (Standard Test Method for Pass Through Flux of Circular Magnetic Sputtering Targets, Method 2). specific In the case of fixing the center of the target, the leakage flux density measured by rotating 0 degrees, 30 degrees, 60 degrees, 90 degrees, 120 degrees is divided by the value of the reference field defined by ASTM, multiplied by 100, in percentage Said. Then, the result of the five-point average is used as the average leakage magnetic flux density (%).

研磨此靶表面,並以顯微鏡觀察組織,結果如圖1所示,可知在非磁性材粒子分散於金屬相之組織中,散佈有金屬粒。當以位於金屬粒外緣上任意2點之距離的最大值為最大徑,且以平行之2條直線夾持該金屬粒時2直線間之距離的最小值為最小徑之情形時,其最大徑與最小徑之和在30μm以上的金屬粒,於1mm2視野內,確認平均為40個。 The surface of the target was polished, and the structure was observed with a microscope. As a result, as shown in Fig. 1, it was found that metal particles were dispersed in the structure in which the non-magnetic material particles were dispersed in the metal phase. When the maximum value of the distance between any two points on the outer edge of the metal particle is the maximum diameter, and the minimum value of the distance between the two straight lines is the minimum diameter when the metal particles are held by two parallel lines, the maximum is The metal particles having a sum of the diameter and the minimum diameter of 30 μm or more have an average of 40 in the field of 1 mm 2 .

又,圖2係為了觀察非磁性材粒子而將圖1擴大者。當以位於非磁性材粒子外緣上任意2點之距離的最大值為最大徑,且以平行之2條直線夾持該金屬粒時2直線間之距離的最小值為最小徑之情形時,最大徑與最小徑之差在0.7μm以下的氧化物粒子,於顯微鏡視野內,存在85%,平均粒徑為0.75μm。 2 is an enlarged view of FIG. 1 for observing non-magnetic material particles. When the maximum value of the distance between any two points on the outer edge of the non-magnetic material particle is the maximum diameter, and the minimum value of the distance between the two lines is the minimum diameter when the metal particles are sandwiched by two parallel lines, The oxide particles having a difference between the maximum diameter and the minimum diameter of 0.7 μm or less have 85% in the microscope field and an average particle diameter of 0.75 μm.

另,在算出氧化物粒子之最大徑、最小徑、平均粒徑時,如圖3所示,係將顯微鏡影像放映至PC畫面,進行影像解析處理(二值化處理),使氧化物粒子(黑色部分)之輪廓明確後,再將此等算出。 When the maximum diameter, the minimum diameter, and the average particle diameter of the oxide particles are calculated, as shown in FIG. 3, a microscope image is projected onto a PC screen, and image analysis processing (binarization processing) is performed to form oxide particles ( After the outline of the black part is clear, calculate this.

接著,將此靶安裝於DC磁控濺鍍裝置,進行濺鍍。使濺鍍條件為濺鍍功率1.2kW、Ar氣壓1.5Pa,實施2kWhr的預濺鍍後,以目標膜厚1000nm,濺鍍在4吋直徑之矽基板上。然後,以顆粒計數器測量附著在基板上之顆粒個數。此時矽基板上之顆粒數為4個。 Next, the target was mounted on a DC magnetron sputtering apparatus for sputtering. The sputtering conditions were a sputtering power of 1.2 kW and an Ar gas pressure of 1.5 Pa, and after pre-sputtering of 2 kWhr, the target film thickness was 1000 nm, and sputtering was performed on a substrate having a diameter of 4 Å. Then, the number of particles attached to the substrate was measured with a particle counter. At this time, the number of particles on the substrate was four.

另,即使是沒有濺鍍之情形,若以顆粒計數器進行測量,則有時亦會在矽基板上計數到0~5個顆粒數,故本實施例之4個顆粒數,可說是極少 之程度。 In addition, even in the case of no sputtering, if the measurement is performed by the particle counter, the number of particles of 0 to 5 is sometimes counted on the substrate, so the number of four particles in the embodiment can be said to be extremely small. The extent of it.

(實施例2) (Example 2)

準備平均粒徑4μm之Co粉末、平均粒徑3μm之Pt粉末、平均粒徑7μm之Ru粉末、平均粒徑6μm之Ta粉末作為金屬原料粉末,且準備平均粒徑1.2μm之TiO2粉末、平均粒徑0.7μm之球形SiO2粉末、平均粒徑0.8μm之CoO粉末、平均粒徑5μm之B2O3粉末作為氧化物粉末。又,準備粒徑經調整成50μm~300μm之範圍的Co粗粉,以重量比計,使平均粒徑4μm之Co粉末與前述Co粗粉的比率為7:3。以下述組成比,秤量2000g此等粉末。 Co powder having an average particle diameter of 4 μm, Pt powder having an average particle diameter of 3 μm, Ru powder having an average particle diameter of 7 μm, and Ta powder having an average particle diameter of 6 μm were prepared as metal raw material powder, and TiO 2 powder having an average particle diameter of 1.2 μm was prepared and averaged. A spherical SiO 2 powder having a particle diameter of 0.7 μm, a CoO powder having an average particle diameter of 0.8 μm, and a B 2 O 3 powder having an average particle diameter of 5 μm were used as the oxide powder. Further, a Co coarse powder having a particle diameter adjusted to a range of 50 μm to 300 μm was prepared, and the ratio of the Co powder having an average particle diameter of 4 μm to the Co coarse powder was 7:3 by weight. 2000 g of these powders were weighed in the following composition ratio.

組成:61.2Co-22Pt-3Ru-0.8Ta-6SiO2-2TiO2-4CoO-1B2O3(mol%) Composition: 61.2Co-22Pt-3Ru-0.8Ta-6SiO 2 -2TiO 2 -4CoO-1B 2 O 3 (mol%)

接著,除了Co粗粉之外,將秤量之粉末與粉碎媒體之鎢合金磨球一起封閉在容量10公升的球磨鍋,旋轉120小時進行混合。然後,將Co粗粉放入球磨鍋,混合1小時。將以此方式製得之混合粉填充於碳製模具,於真空環境中,在溫度1000℃、保持時間2小時、加壓力30MPa的條件下,進行熱壓而得到燒結體。進一步以車床對該燒結體進行切削加工,而得到直徑為180mm、厚度為5mm的圓盤狀靶。 Next, in addition to the Co coarse powder, the weighed powder was sealed with a tungsten alloy grinding ball of a pulverizing medium in a ball mill having a capacity of 10 liters, and rotated for 120 hours to be mixed. Then, the Co coarse powder was placed in a ball mill and mixed for 1 hour. The mixed powder obtained in this manner was filled in a carbon mold, and hot pressed in a vacuum atmosphere under the conditions of a temperature of 1000 ° C, a holding time of 2 hours, and a pressing force of 30 MPa to obtain a sintered body. Further, the sintered body was cut by a lathe to obtain a disk-shaped target having a diameter of 180 mm and a thickness of 5 mm.

實施例2之靶的平均漏磁通密度為28%。研磨此靶表面,並以顯微鏡觀察組織,結果如圖4所示,可知在非磁性材粒子分散於金屬相之組織中,散佈有金屬粒。經與實施例1同樣方式評價之最大徑與最小徑之和在30μm以上的金屬粒,於1mm2視野內,確認平均為19個。又,圖5係為了觀察非磁性材粒子而將圖4擴大者。經與實施例1同樣方式評 價之最大徑與最小徑之差在0.7μm以下之非磁性材粒子的比例為64%,平均粒徑為1.26μm。 The target of Example 2 had an average leakage flux density of 28%. The surface of the target was polished, and the structure was observed under a microscope. As a result, as shown in Fig. 4, it was found that metal particles were dispersed in the structure in which the non-magnetic material particles were dispersed in the metal phase. The metal particles having a maximum diameter and a minimum diameter of 30 μm or more which were evaluated in the same manner as in Example 1 were confirmed to have an average of 19 metal particles in a field of 1 mm 2 . In addition, FIG. 5 is an enlarged view of FIG. 4 in order to observe the non-magnetic material particles. The ratio of the non-magnetic material particles having a difference between the maximum diameter and the minimum diameter of 0.7 μm or less, which was evaluated in the same manner as in Example 1, was 64%, and the average particle diameter was 1.26 μm.

接著,將此靶安裝於DC磁控濺鍍裝置,進行濺鍍。使濺鍍條件與實施例1同樣,濺鍍功率為1.2kW,Ar氣壓為1.5Pa,實施2kWhr的預濺鍍後,以目標膜厚1000nm,濺鍍在4吋直徑之矽基板上。然後,以顆粒計數器測量附著在基板上之顆粒個數。此時矽基板上之顆粒數為4個。 Next, the target was mounted on a DC magnetron sputtering apparatus for sputtering. The sputtering conditions were the same as in Example 1. The sputtering power was 1.2 kW, the Ar gas pressure was 1.5 Pa, and after 2 kWhr of pre-sputtering, the target film thickness was 1000 nm, and sputtering was performed on a 4 吋 diameter substrate. Then, the number of particles attached to the substrate was measured with a particle counter. At this time, the number of particles on the substrate was four.

(實施例3) (Example 3)

準備平均粒徑4μm之Co粉末、平均粒徑3μm之Pt粉末、平均粒徑7μm之Co-B粉末作為金屬原料粉末,且準備平均粒徑1.2μm之TiO2粉末、平均粒徑0.7μm之球形SiO2粉末、平均粒徑0.8μm之MnO粉末、平均粒徑2μm之Co3O4粉末作為氧化物粉末。又,準備粒徑經調整成50μm~300μm之範圍的Co粗粉,以重量比計,使平均粒徑4μm之Co粉末與前述Co粗粉的比率為7:3。以下述組成比,秤量2000g此等粉末。 Co powder having an average particle diameter of 4 μm, Pt powder having an average particle diameter of 3 μm, and Co-B powder having an average particle diameter of 7 μm were prepared as a metal raw material powder, and TiO 2 powder having an average particle diameter of 1.2 μm and a spherical body having an average particle diameter of 0.7 μm were prepared. SiO 2 powder, MnO powder having an average particle diameter of 0.8 μm, and Co 3 O 4 powder having an average particle diameter of 2 μm were used as the oxide powder. Further, a Co coarse powder having a particle diameter adjusted to a range of 50 μm to 300 μm was prepared, and the ratio of the Co powder having an average particle diameter of 4 μm to the Co coarse powder was 7:3 by weight. 2000 g of these powders were weighed in the following composition ratio.

組成:63Co-21Pt-3B-6SiO2-2TiO2-4MnO-1Co3O4(mol%) Composition: 63Co-21Pt-3B-6SiO 2 -2TiO 2 -4MnO-1Co 3 O 4 (mol%)

接著,除了Co粗粉之外,將秤量之粉末與粉碎媒體之鎢合金磨球一起封閉在容量10公升的球磨鍋,旋轉120小時進行混合。然後,將Co粗粉放入球磨鍋,混合1小時。將以此方式製得之混合粉填充於碳製模具,於真空環境中,在溫度1000℃、保持時間2小時、加壓力30MPa的條件下,進行熱壓而得到燒結體。進一步以車床對該燒結體進行切削加工,而得到直徑為180mm、厚度為5mm的圓盤狀靶。 Next, in addition to the Co coarse powder, the weighed powder was sealed with a tungsten alloy grinding ball of a pulverizing medium in a ball mill having a capacity of 10 liters, and rotated for 120 hours to be mixed. Then, the Co coarse powder was placed in a ball mill and mixed for 1 hour. The mixed powder obtained in this manner was filled in a carbon mold, and hot pressed in a vacuum atmosphere under the conditions of a temperature of 1000 ° C, a holding time of 2 hours, and a pressing force of 30 MPa to obtain a sintered body. Further, the sintered body was cut by a lathe to obtain a disk-shaped target having a diameter of 180 mm and a thickness of 5 mm.

實施例3之靶的平均漏磁通密度為31%。研磨此靶表面,並以顯微鏡觀察組織,結果可知在非磁性材粒子分散於金屬相之組織中, 散佈有金屬粒。經與實施例1同樣方式評價之最大徑與最小徑之和在30μm以上的金屬粒,於1mm2視野內,確認平均為18個。又,經與實施例1同樣方式評價之最大徑與最小徑之差在0.7μm以下之非磁性材粒子的百分比為60%,平均粒徑為1.16μm。 The target of Example 3 had an average leakage flux density of 31%. When the surface of the target was polished and the structure was observed with a microscope, it was found that metal particles were dispersed in the structure in which the non-magnetic material particles were dispersed in the metal phase. The metal particles having a maximum diameter to a minimum diameter of 30 μm or more which were evaluated in the same manner as in Example 1 were confirmed to have an average of 18 metal particles in a field of 1 mm 2 . Further, the percentage of the non-magnetic material particles having a difference between the maximum diameter and the minimum diameter of 0.7 μm or less, which was evaluated in the same manner as in Example 1, was 60%, and the average particle diameter was 1.16 μm.

接著,將此靶安裝於DC磁控濺鍍裝置,進行濺鍍。使濺鍍條件與實施例1同樣,濺鍍功率為1.2kW,Ar氣壓為1.5Pa,實施2kWhr的預濺鍍後,以目標膜厚1000nm,濺鍍在4吋直徑之矽基板上。然後,以顆粒計數器測量附著在基板上之顆粒個數。此時矽基板上之顆粒數為5個。 Next, the target was mounted on a DC magnetron sputtering apparatus for sputtering. The sputtering conditions were the same as in Example 1. The sputtering power was 1.2 kW, the Ar gas pressure was 1.5 Pa, and after 2 kWhr of pre-sputtering, the target film thickness was 1000 nm, and sputtering was performed on a 4 吋 diameter substrate. Then, the number of particles attached to the substrate was measured with a particle counter. At this time, the number of particles on the substrate was five.

(實施例4) (Example 4)

準備平均粒徑4μm之Fe粉末、平均粒徑3μm之Pt粉末、平均粒徑7μm之Fe-B粉末作為金屬原料粉末,且準備平均粒徑0.8μm之球形SiO2粉末作為氧化物粉末。又,準備粒徑經調整成50μm~300μm之範圍的Fe粗粉,以重量比計,使平均粒徑4μm之Fe粉末與前述Fe粗粉的比率為8:2。以下述組成比,秤量2000g此等粉末。 Fe powder having an average particle diameter of 4 μm, Pt powder having an average particle diameter of 3 μm, and Fe—B powder having an average particle diameter of 7 μm were prepared as a metal raw material powder, and spherical SiO 2 powder having an average particle diameter of 0.8 μm was prepared as an oxide powder. Further, Fe coarse powder having a particle diameter adjusted to a range of 50 μm to 300 μm was prepared, and the ratio of the Fe powder having an average particle diameter of 4 μm to the above-mentioned Fe coarse powder was 8:2 by weight. 2000 g of these powders were weighed in the following composition ratio.

組成:52Fe-25Pt-5B-18SiO2(mol%) Composition: 52Fe-25Pt-5B-18SiO 2 (mol%)

接著,除了Fe粗粉之外,將秤量之粉末與粉碎媒體之鎢合金磨球一起封閉在容量10公升的球磨鍋,旋轉120小時進行混合。然後,將Fe粗粉放入球磨鍋,混合1小時。將以此方式製得之混合粉填充於碳製模具,於真空環境中,在溫度1300℃、保持時間2小時、加壓力30MPa的條件下,進行熱壓而得到燒結體。進一步以車床對該燒結體進行切削加工,而得到直徑為180mm、厚度為5mm的圓盤狀靶。 Next, in addition to the Fe coarse powder, the weighed powder was sealed with a tungsten alloy grinding ball of a pulverizing medium in a ball mill having a capacity of 10 liters, and rotated for 120 hours to be mixed. Then, the Fe coarse powder was placed in a ball mill and mixed for 1 hour. The mixed powder obtained in this manner was filled in a carbon mold, and hot pressed in a vacuum atmosphere under the conditions of a temperature of 1300 ° C, a holding time of 2 hours, and a pressing force of 30 MPa to obtain a sintered body. Further, the sintered body was cut by a lathe to obtain a disk-shaped target having a diameter of 180 mm and a thickness of 5 mm.

實施例4之靶的平均漏磁通密度為61%。研磨此靶表面, 並以顯微鏡觀察組織,結果可知在非磁性材粒子分散於金屬相之組織中,散佈有金屬粒。經與實施例1同樣方式評價之最大徑與最小徑之和在30μm以上的金屬粒,於1mm2視野內,確認平均為4個。經與實施例1同樣方式評價之最大徑與最小徑之差在0.7μm以下之非磁性材粒子的百分比為65%,平均粒徑為1.29μm。 The target of Example 4 had an average leakage flux density of 61%. When the surface of the target was polished and the structure was observed with a microscope, it was found that metal particles were dispersed in the structure in which the non-magnetic material particles were dispersed in the metal phase. The metal particles having a maximum diameter to a minimum diameter of 30 μm or more which were evaluated in the same manner as in Example 1 were confirmed to have an average of four metal particles in a field of 1 mm 2 . The percentage of the nonmagnetic material particles having a difference between the maximum diameter and the minimum diameter of 0.7 μm or less, which was evaluated in the same manner as in Example 1, was 65%, and the average particle diameter was 1.29 μm.

接著,將此靶安裝於DC磁控濺鍍裝置,進行濺鍍。使濺鍍條件與實施例1同樣,濺鍍功率為1.2kW,Ar氣壓為1.5Pa,實施2kWhr的預濺鍍後,以目標膜厚1000nm,濺鍍在4吋直徑之矽基板上。然後,以顆粒計數器測量附著在基板上之顆粒個數。此時矽基板上之顆粒數為6個。 Next, the target was mounted on a DC magnetron sputtering apparatus for sputtering. The sputtering conditions were the same as in Example 1. The sputtering power was 1.2 kW, the Ar gas pressure was 1.5 Pa, and after 2 kWhr of pre-sputtering, the target film thickness was 1000 nm, and sputtering was performed on a 4 吋 diameter substrate. Then, the number of particles attached to the substrate was measured with a particle counter. At this time, the number of particles on the substrate was six.

(比較例1) (Comparative Example 1)

準備平均粒徑4μm之Co粉末、平均粒徑5μm之Cr粉末、平均粒徑3μm之Pt粉末作為金屬原料粉末,且準備平均粒徑1.2μm之TiO2粉末、平均粒徑0.7μm之芯狀SiO2粉末、平均粒徑1μm之Cr2O3粉末作為氧化物粉末。然後,以下述組成比,秤量2000g此等粉末。 Co powder having an average particle diameter of 4 μm, Cr powder having an average particle diameter of 5 μm, and Pt powder having an average particle diameter of 3 μm were prepared as a metal raw material powder, and TiO 2 powder having an average particle diameter of 1.2 μm and core SiO having an average particle diameter of 0.7 μm were prepared. 2 powder, Cr 2 O 3 powder having an average particle diameter of 1 μm as an oxide powder. Then, 2000 g of these powders were weighed in the following composition ratio.

組成:69Co-18Pt-2Cr-5SiO2-2TiO2-4Cr2O3(mol%) Composition: 69Co-18Pt-2Cr-5SiO 2 -2TiO 2 -4Cr 2 O 3 (mol%)

接著,將秤量之粉末與粉碎媒體之鎢合金磨球一起封閉在容量10公升的球磨鍋,旋轉120小時進行混合。將以此方式製得之混合粉填充於碳製模具,與實施例1同樣,於真空環境中,在溫度1100℃、保持時間2小時、加壓力30MPa的條件下,進行熱壓而得到燒結體。進一步以車床對該燒結體進行切削加工,而得到直徑為180mm、厚度為5mm的圓盤狀靶。 Next, the weighed powder was enclosed in a ball mill having a capacity of 10 liters together with a tungsten alloy grinding ball of a pulverizing medium, and rotated for 120 hours for mixing. The mixed powder obtained in this manner was filled in a carbon mold, and in the same manner as in Example 1, a sintered body was obtained by hot pressing under the conditions of a temperature of 1,100 ° C, a holding time of 2 hours, and a pressing force of 30 MPa. . Further, the sintered body was cut by a lathe to obtain a disk-shaped target having a diameter of 180 mm and a thickness of 5 mm.

比較例1之靶的平均漏磁通密度為18%。研磨此靶表面, 並以顯微鏡觀察組織,結果經與實施例1同樣方式評價之最大徑與最小徑之和在30μm以上的金屬粒,於1mm2視野內,平均不到1個。又,經與實施例1同樣評價之最大徑與最小徑之差在0.7μm以下之非磁性材粒子的百分比為89%,平均粒徑為0.71μm。 The target of Comparative Example 1 had an average leakage flux density of 18%. When the surface of the target was polished and the structure was observed with a microscope, the metal particles having a maximum diameter to the minimum diameter of 30 μm or more, which were evaluated in the same manner as in Example 1, had an average of less than one in a field of 1 mm 2 . Further, the percentage of the non-magnetic material particles having a difference between the maximum diameter and the minimum diameter of 0.7 μm or less as evaluated in the same manner as in Example 1 was 89%, and the average particle diameter was 0.71 μm.

接著,將此靶安裝於DC磁控濺鍍裝置,進行濺鍍。雖然使濺鍍條件與實施例1同樣,濺鍍功率為1.2kW,Ar氣壓為1.5Pa,但由於無法得到穩定之放電,而以濺鍍功率1.7kW,Ar氣壓為2.8Pa,使放電穩定,實施2kWhr的預濺鍍後,以目標膜厚1000nm,濺鍍在4吋直徑之矽基板上。然後,以顆粒計數器測量附著在基板上之顆粒個數。此時矽基板上之顆粒數為9個。 Next, the target was mounted on a DC magnetron sputtering apparatus for sputtering. The sputtering conditions were the same as in the first embodiment, the sputtering power was 1.2 kW, and the Ar gas pressure was 1.5 Pa. However, since stable discharge could not be obtained, the sputtering power was 1.7 kW, and the Ar gas pressure was 2.8 Pa, and the discharge was stabilized. After pre-sputtering of 2 kWhr, a target film thickness of 1000 nm was sputtered onto a 4 吋 diameter substrate. Then, the number of particles attached to the substrate was measured with a particle counter. At this time, the number of particles on the substrate was nine.

(比較例2) (Comparative Example 2)

準備平均粒徑4μm之Co粉末、平均粒徑5μm之Cr粉末、平均粒徑3μm之Pt粉末作為金屬原料粉末,且準備平均粒徑1.2μm之TiO2粉末、平均粒徑0.7μm之芯狀SiO2粉末、平均粒徑1μm之Cr2O3粉末作為氧化物粉末。又,準備粒徑經調整成50μm~300μm之範圍的Co粗粉,以重量比計,使平均粒徑4μm之Co粉末與前述Co粗粉的比率為7:3。以下述組成比,秤量2000g此等粉末。 Co powder having an average particle diameter of 4 μm, Cr powder having an average particle diameter of 5 μm, and Pt powder having an average particle diameter of 3 μm were prepared as a metal raw material powder, and TiO 2 powder having an average particle diameter of 1.2 μm and core SiO having an average particle diameter of 0.7 μm were prepared. 2 powder, Cr 2 O 3 powder having an average particle diameter of 1 μm as an oxide powder. Further, a Co coarse powder having a particle diameter adjusted to a range of 50 μm to 300 μm was prepared, and the ratio of the Co powder having an average particle diameter of 4 μm to the Co coarse powder was 7:3 by weight. 2000 g of these powders were weighed in the following composition ratio.

組成:69Co-18Pt-2Cr-5SiO2-2TiO2-4Cr2O3(mol%) Composition: 69Co-18Pt-2Cr-5SiO 2 -2TiO 2 -4Cr 2 O 3 (mol%)

接著,除了Co粗粉之外,將秤量之粉末與粉碎媒體之鎢合金磨球一起封閉在容量10公升的球磨鍋,旋轉70小時進行混合。然後,將Co粗粉放入球磨鍋,混合1小時。將以此方式製得之混合粉填充於碳製模具,於真空環境中,在溫度1100℃、保持時間2小時、加壓力30MPa的條 件下,進行熱壓而得到燒結體。進一步以車床對該燒結體進行切削加工,而得到直徑為180mm、厚度為5mm的圓盤狀靶。 Next, in addition to the Co coarse powder, the weighed powder was sealed with a tungsten alloy grinding ball of a pulverizing medium in a ball mill having a capacity of 10 liters, and rotated for 70 hours to be mixed. Then, the Co coarse powder was placed in a ball mill and mixed for 1 hour. The mixed powder prepared in this manner is filled in a carbon mold, and in a vacuum environment, at a temperature of 1100 ° C, a holding time of 2 hours, a pressure of 30 MPa Under the conditions, hot pressing was performed to obtain a sintered body. Further, the sintered body was cut by a lathe to obtain a disk-shaped target having a diameter of 180 mm and a thickness of 5 mm.

比較例2之靶的平均漏磁通密度為29%。研磨此靶表面,並以顯微鏡觀察組織,結果經與實施例1同樣方式評價之最大徑與最小徑之和在30μm以上的金屬粒,於1mm2視野內,確認平均為36個。又,經與實施例1同樣方式評價之最大徑與最小徑之差在0.7μm以下之非磁性材粒子的比例為54%,平均粒徑為1.87μm。 The target of Comparative Example 2 had an average leakage flux density of 29%. When the surface of the target was polished and the structure was observed with a microscope, the metal particles having a maximum diameter and a minimum diameter of 30 μm or more were evaluated in the same manner as in Example 1, and an average of 36 were observed in a field of 1 mm 2 . Further, the ratio of the non-magnetic material particles having a difference between the maximum diameter and the minimum diameter of 0.7 μm or less, which was evaluated in the same manner as in Example 1, was 54%, and the average particle diameter was 1.87 μm.

接著,將此靶安裝於DC磁控濺鍍裝置,進行濺鍍。使濺鍍條件與實施例1同樣,濺鍍功率為1.2kW,Ar氣壓為1.5Pa,實施2kWhr的預濺鍍後,以目標膜厚1000nm,濺鍍在4吋直徑之矽基板上。然後,以顆粒計數器測量附著在基板上之顆粒個數。此時矽基板上之顆粒數高達28個。 Next, the target was mounted on a DC magnetron sputtering apparatus for sputtering. The sputtering conditions were the same as in Example 1. The sputtering power was 1.2 kW, the Ar gas pressure was 1.5 Pa, and after 2 kWhr of pre-sputtering, the target film thickness was 1000 nm, and sputtering was performed on a 4 吋 diameter substrate. Then, the number of particles attached to the substrate was measured with a particle counter. At this time, the number of particles on the substrate is as high as 28.

本發明藉由調整濺鍍靶之組織結構(尤其是非磁性材粒子與金屬粒之形狀),來提升濺鍍時之漏磁場,及抑制非磁性材所導致的異常放電,故若使用本發明之靶,則在以磁控濺鍍裝置進行濺鍍時,可得到穩定之放電。並且具有下述優異之效果:可抑制非磁性材之異常放電、減少因異常放電造成濺鍍過程中產生顆粒、可得到因提升產率而改善成本之效果,故適用作為磁記錄媒體之磁性體薄膜(尤其是硬碟驅動器記錄層)成膜所使用之強磁性材濺鍍靶。 According to the present invention, by adjusting the structure of the sputtering target (especially the shape of the non-magnetic material particles and the metal particles), the leakage magnetic field during sputtering is suppressed, and the abnormal discharge caused by the non-magnetic material is suppressed, so that the present invention is used. The target can be stably discharged when sputtered by a magnetron sputtering device. Moreover, it has the following excellent effects: it can suppress the abnormal discharge of the non-magnetic material, reduce the generation of particles during the sputtering process due to abnormal discharge, and can improve the cost by improving the yield, so it is suitable as a magnetic body for a magnetic recording medium. A strong magnetic material sputtering target used for film formation of a film (especially a hard disk drive recording layer).

Claims (7)

一種濺鍍靶,係由非磁性材粒子分散於含有Co或Fe之磁性材中的材料構成的燒結體濺鍍靶,其特徵在於:於該靶中之研磨面所觀察到的組織,係由平均粒徑1.8μm以下之非磁性材粒子與分散有該非磁性材粒子之含有Co或Fe的金屬相及金屬粒構成,當以位於該非磁性材粒子外緣上任意2點之距離的最大值為最大徑,以平行之2條直線夾持該粒子時2直線間之距離的最小值為最小徑之情形時,其最大徑與最小徑之差在0.7μm以下的非磁性材粒子佔該靶中之研磨面所觀察到之組織內的非磁性材粒子的60%以上,且,當以位於該金屬粒外緣上任意2點之距離的最大值為最大徑,以平行之2條直線夾持該金屬粒時2直線間之距離的最小值為最小徑之情形時,其最大徑與最小徑之和在30μm以上的金屬粒,於1mm2視野內,平均存在1個以上。 A sputtering target is a sintered body sputtering target composed of a material in which non-magnetic material particles are dispersed in a magnetic material containing Co or Fe, and is characterized in that the structure observed on the polished surface of the target is The non-magnetic material particles having an average particle diameter of 1.8 μm or less and the metal phase and metal particles containing Co or Fe in which the non-magnetic material particles are dispersed are formed, and the maximum value at a distance of any two points on the outer edge of the non-magnetic material particles is In the maximum diameter, when the minimum value of the distance between the two straight lines is the minimum diameter when the particles are sandwiched by two parallel lines, the non-magnetic material particles having a difference between the maximum diameter and the minimum diameter of 0.7 μm or less account for the target. 60% or more of the non-magnetic material particles in the microstructure observed on the polished surface, and the maximum diameter of the distance between any two points on the outer edge of the metal particle is the maximum diameter, and the two straight lines are held in parallel In the case of the metal particles, when the minimum value of the distance between the straight lines is the minimum diameter, the metal particles having a maximum diameter to the minimum diameter of 30 μm or more have an average of one or more in the field of 1 mm 2 . 如申請專利範圍第1項之濺鍍靶,其中,該非磁性材粒子為選自B2O3、CoO、Co3O4、MnO、Mn3O4、SiO2、SnO2、TiO2、Ti2O3、Cr2O3,Ta2O5、WO2、WO3、ZrO2中一種以上之氧化物,此等之含量為0.5~20mol%。 The sputtering target of claim 1, wherein the non-magnetic material particles are selected from the group consisting of B 2 O 3 , CoO, Co 3 O 4 , MnO, Mn 3 O 4 , SiO 2 , SnO 2 , TiO 2 , Ti One or more oxides of 2 O 3 , Cr 2 O 3 , Ta 2 O 5 , WO 2 , WO 3 , and ZrO 2 , and the content thereof is 0.5 to 20 mol%. 如申請專利範圍第1項之濺鍍靶,其中,Cr在0mol%以上15mol%以下,Pt在5mol%以上30mol%以下,不包括非磁性材料,剩餘部分為Co及不可避免之雜質。 The sputtering target according to the first aspect of the invention, wherein Cr is 0 mol% or more and 15 mol% or less, Pt is 5 mol% or more and 30 mol% or less, excluding a nonmagnetic material, and the remainder is Co and an unavoidable impurity. 如申請專利範圍第2項之濺鍍靶,其中,Cr在0mol%以上15mol%以下,Pt在5mol%以上30mol%以下,不包括非磁性材料,剩餘部分為Co及不可避免之雜質。 The sputtering target according to claim 2, wherein Cr is 0 mol% or more and 15 mol% or less, Pt is 5 mol% or more and 30 mol% or less, excluding a nonmagnetic material, and the remainder is Co and unavoidable impurities. 如申請專利範圍第3項之濺鍍靶,其進一步含有0.5mol%以上12mol %以下之選自Mg、Al、Si、Mn、Nb、Mo、Ru、Pd、Ta、W、B中一種以上之元素。 For example, the sputtering target of the third application patent scope further contains 0.5 mol% or more and 12 mol. One or more of elements selected from the group consisting of Mg, Al, Si, Mn, Nb, Mo, Ru, Pd, Ta, W, and B. 如申請專利範圍第4項之濺鍍靶,其進一步含有0.5mol%以上12mol%以下之選自Mg、Al、Si、Mn、Nb、Mo、Ru、Pd、Ta、W、B中一種以上之元素。 The sputtering target according to claim 4, further comprising 0.5 mol% or more and 12 mol% or less of one or more selected from the group consisting of Mg, Al, Si, Mn, Nb, Mo, Ru, Pd, Ta, W, and B. element. 如申請專利範圍第1至6項中任一項之濺鍍靶,其中,該金屬粒由Co或Fe構成。 The sputtering target according to any one of claims 1 to 6, wherein the metal particles are composed of Co or Fe.
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Publication number Priority date Publication date Assignee Title
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JP2000234168A (en) * 1998-12-07 2000-08-29 Japan Energy Corp Sputtering target for forming optical disk protective film
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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