SG10201500148WA - Ferromagnetic sputtering target with less particle generation - Google Patents

Ferromagnetic sputtering target with less particle generation

Info

Publication number
SG10201500148WA
SG10201500148WA SG10201500148WA SG10201500148WA SG10201500148WA SG 10201500148W A SG10201500148W A SG 10201500148WA SG 10201500148W A SG10201500148W A SG 10201500148WA SG 10201500148W A SG10201500148W A SG 10201500148WA SG 10201500148W A SG10201500148W A SG 10201500148WA
Authority
SG
Singapore
Prior art keywords
sputtering target
particle generation
less particle
ferromagnetic sputtering
ferromagnetic
Prior art date
Application number
SG10201500148WA
Inventor
Shin-Ichi Ogino
Atsushi Sato
Atsutoshi Arakawa
Yuichiro Nakamura
Original Assignee
Jx Nippon Mining & Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jx Nippon Mining & Metals Corp filed Critical Jx Nippon Mining & Metals Corp
Publication of SG10201500148WA publication Critical patent/SG10201500148WA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C19/00—Alloys based on nickel or cobalt
    • C22C19/07—Alloys based on nickel or cobalt based on cobalt
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851—Coating a support with a magnetic layer by sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Powder Metallurgy (AREA)
  • Manufacture Of Alloys Or Alloy Compounds (AREA)
  • Magnetic Record Carriers (AREA)
SG10201500148WA 2011-08-23 2012-04-06 Ferromagnetic sputtering target with less particle generation SG10201500148WA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011181969 2011-08-23

Publications (1)

Publication Number Publication Date
SG10201500148WA true SG10201500148WA (en) 2015-03-30

Family

ID=47746199

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201500148WA SG10201500148WA (en) 2011-08-23 2012-04-06 Ferromagnetic sputtering target with less particle generation
SG2013066196A SG193277A1 (en) 2011-08-23 2012-04-06 Ferromagnetic sputtering target with minimized particle generation

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG2013066196A SG193277A1 (en) 2011-08-23 2012-04-06 Ferromagnetic sputtering target with minimized particle generation

Country Status (7)

Country Link
US (1) US20140001038A1 (en)
JP (1) JP5763178B2 (en)
CN (1) CN104105812B (en)
MY (1) MY162450A (en)
SG (2) SG10201500148WA (en)
TW (1) TWI534285B (en)
WO (1) WO2013027443A1 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MY150804A (en) 2009-03-27 2014-02-28 Jx Nippon Mining & Metals Corp Nonmagnetic material particle-dispersed ferromagnetic material sputtering target
WO2011016365A1 (en) 2009-08-06 2011-02-10 Jx日鉱日石金属株式会社 Inorganic particle-dispersed sputtering target
US9228251B2 (en) * 2010-01-21 2016-01-05 Jx Nippon Mining & Metals Corporation Ferromagnetic material sputtering target
CN104975264B (en) 2010-07-29 2020-07-28 吉坤日矿日石金属株式会社 Sputtering target for magnetic recording film and method for producing same
JP5847203B2 (en) 2012-01-18 2016-01-20 Jx日鉱日石金属株式会社 Co-Cr-Pt-based sputtering target and method for producing the same
CN104145042B (en) 2012-02-22 2016-08-24 吉坤日矿日石金属株式会社 Magnetic material sputtering target and manufacture method thereof
MY170298A (en) 2012-02-23 2019-07-17 Jx Nippon Mining & Metals Corp Ferromagnetic material sputtering target containing chromium oxide
WO2013133163A1 (en) 2012-03-09 2013-09-12 Jx日鉱日石金属株式会社 Sputtering target for magnetic recording medium, and process for producing same
US9540724B2 (en) 2012-06-18 2017-01-10 Jx Nippon Mining & Metals Corporation Sputtering target for magnetic recording film
JP6037415B2 (en) * 2013-11-28 2016-12-07 Ｊｘ金属株式会社 Magnetic material sputtering target and manufacturing method thereof
JP6005767B2 (en) * 2014-01-17 2016-10-12 Ｊｘ金属株式会社 Sputtering target for magnetic recording media
US10837101B2 (en) 2016-03-31 2020-11-17 Jx Nippon Mining & Metals Corporation Ferromagnetic material sputtering target
TWI702294B (en) * 2018-07-31 2020-08-21 日商田中貴金屬工業股份有限公司 Sputtering target for magnetic recording media

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4499183B2 (en) * 2008-03-28 2010-07-07 日鉱金属株式会社 Non-magnetic particle dispersed ferromagnetic sputtering target
JP2010222639A (en) * 2009-03-24 2010-10-07 Mitsubishi Materials Corp METHOD OF MANUFACTURING Co-BASED SINTERED ALLOY SPUTTERING TARGET FOR FORMING MAGNETIC RECORDING FILM HAVING LOW MAGNETIC PERMEABILITY
MY150804A (en) * 2009-03-27 2014-02-28 Jx Nippon Mining & Metals Corp Nonmagnetic material particle-dispersed ferromagnetic material sputtering target
JP4422203B1 (en) * 2009-04-01 2010-02-24 Ｔａｎａｋａホールディングス株式会社 Magnetron sputtering target and method for manufacturing the same
WO2011016365A1 (en) * 2009-08-06 2011-02-10 Jx日鉱日石金属株式会社 Inorganic particle-dispersed sputtering target
JP4673453B1 (en) * 2010-01-21 2011-04-20 Ｊｘ日鉱日石金属株式会社 Ferromagnetic material sputtering target
US9228251B2 (en) * 2010-01-21 2016-01-05 Jx Nippon Mining & Metals Corporation Ferromagnetic material sputtering target

Also Published As

Publication number Publication date
CN104105812B (en) 2017-05-24
JPWO2013027443A1 (en) 2015-03-19
CN104105812A (en) 2014-10-15
JP5763178B2 (en) 2015-08-12
TWI534285B (en) 2016-05-21
SG193277A1 (en) 2013-10-30
US20140001038A1 (en) 2014-01-02
WO2013027443A1 (en) 2013-02-28
TW201309829A (en) 2013-03-01
MY162450A (en) 2017-06-15

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