WO2010098186A1 - 半導体素子の製造方法 - Google Patents
半導体素子の製造方法 Download PDFInfo
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- WO2010098186A1 WO2010098186A1 PCT/JP2010/051557 JP2010051557W WO2010098186A1 WO 2010098186 A1 WO2010098186 A1 WO 2010098186A1 JP 2010051557 W JP2010051557 W JP 2010051557W WO 2010098186 A1 WO2010098186 A1 WO 2010098186A1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 81
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/073—Shaping the laser spot
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
- B23K26/3568—Modifying rugosity
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B28D—WORKING STONE OR STONE-LIKE MATERIALS
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- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
Definitions
- the present invention relates to a method for manufacturing a semiconductor element, and more particularly to a method for manufacturing a semiconductor element including a step of dividing a wafer including a substrate.
- a process of dividing a wafer into element chips is included, and for the element chips, a method of forming a separation groove with a cutter, a dicer, or the like and pressing it has been used.
- a method of breaking by forming a separation groove or the like by irradiating a laser beam instead of a cutter or a dicer has been proposed, but in a method of heating and melting a wafer by irradiating a laser beam, the wafer is melted and re-solidified. Since the location is discolored and the luminance of the light emitting element is lowered, a method of processing using a pulse laser beam having a short pulse width has been proposed. By using a pulse laser beam having a short pulse width, it is possible to perform processing that avoids discoloration due to multiphoton absorption rather than melting, and thus it is possible to suppress a decrease in luminance of the light emitting element.
- an altered region 41 by laser irradiation is formed in a region with respect to a division planned line inside a substrate 40 provided with a semiconductor layer 42.
- a breaking method has been proposed (see Japanese Patent Application Laid-Open No. 2008-6492).
- FIG. 13 a plurality of modified portions 51 by laser irradiation are formed inside a substrate 50 provided with a semiconductor layer 52, and continuous groove portions 53 are formed on the surface of the substrate 50 by laser irradiation. Therefore, a method of separating each semiconductor light emitting element from the separation surfaces along the plurality of stages of reforming portions 51 and groove portions 53 has also been proposed (see Japanese Patent Application Laid-Open Nos. 2008-98465 and 2007-324326).
- the method of forming the groove portion by laser irradiation on the substrate surface is a method in which the separation groove forming means conventionally formed by a cutter or a dicer is changed to a laser, and the cleaving with the separation groove by the cutter or the dicer as a notch.
- the laser beam may be focused on the outside of the substrate due to the unevenness of the substrate surface and the condensing accuracy of the laser device. When the air outside the substrate is focused, plasma is generated at that portion, and a part of the energy of the laser beam is wasted.
- the present inventor has solved the above-mentioned problems by generating a processing part and a crack that runs from the processing part to the substrate surface and connects adjacent processing parts by laser irradiation. I found that it can be solved.
- a pulse laser beam is condensed inside a substrate constituting a wafer, and a plurality of processed parts spaced inside the substrate are formed along a predetermined division line. It has a laser irradiation process that runs from a processing part to at least the surface of the substrate and generates a crack that connects the adjacent processing parts, and a wafer dividing process that divides the wafer along the planned dividing line.
- the crack connects the processed parts adjacent to each other inside the substrate.
- the processing part has a head part and a foot part, and the crack connects the head part and the foot part of the adjacent processing part.
- the distance between the condensing position of the pulsed laser beam and the surface of the substrate is not less than half the processing spot diameter of the pulsed laser beam and not more than 25 ⁇ m.
- the distance between the focused position of the pulse laser beam and the surface of the substrate is 5 ⁇ m or more and 25 ⁇ m or less.
- the distance between the processing parts is not less than the processing spot diameter of the pulse laser beam.
- the processed portion and the crack are formed within a range of 10% to 80% of the thickness of the substrate.
- the dividing line is a first dividing line
- the crack is a first crack
- a plurality of processing parts further condensing the pulse laser beam inside the substrate along a second division planned line that is substantially perpendicular to the first division planned line and spaced apart inside the substrate Is formed along the planned dividing line, runs from the processed part to at least the surface of the substrate, and generates a second crack connecting the adjacent processed parts
- the wafer is further divided along the second scheduled dividing line.
- the first crack runs around the adjacent processed parts
- the second crack runs along the second planned dividing line.
- the interval between the processed portions formed along the first planned division line is smaller than the interval between the processed portions formed along the second planned division line.
- the substrate has a first main surface and a second main surface, a semiconductor layer is provided on the first main surface, and the pulse is applied from the second main surface side in the laser irradiation step. Irradiate with laser light. The distance between the focused position of the pulse laser beam and the semiconductor layer is greater than 30 ⁇ m.
- the processed part is a processed part by multiphoton absorption.
- the substrate is a sapphire substrate.
- the second main surface is a surface different from the A surface, and the first dividing line is a line intersecting the a-axis of the substrate.
- a processed part and a crack that runs from the processed part to the substrate surface and connects the adjacent processed parts are generated, so that it is possible to accurately divide along the processed part and the crack.
- the cracks along the planned dividing line first reach the substrate surface from the processed part, and further cracks and cracks extending from the processed part extend to the back surface of the substrate along the planned dividing line. Can be directed. Thereby, the wafer can be divided with high accuracy.
- FIG. 1 is a schematic plan view illustrating the main steps of the embodiment.
- FIG. 2 is a schematic plan view illustrating main steps of the embodiment.
- FIG. 3 is a schematic sectional view taken along line AA in FIG.
- FIG. 4 is a schematic sectional view taken along line BB in FIG.
- FIG. 5 is a schematic cross-sectional view illustrating an example of the process of the embodiment.
- FIG. 6 is a schematic cross-sectional view illustrating main steps of the embodiment.
- FIG. 7 is a schematic diagram for explaining a part of the side surface of the light emitting element in the embodiment.
- FIG. 8 is a schematic plan view illustrating an example of the process of the embodiment.
- FIG. 9 is a schematic plan view illustrating an example of the process of the embodiment.
- FIG. 10 is a schematic plan view illustrating an example of the process of the embodiment.
- FIG. 11 is a schematic cross-sectional view illustrating an example of the process of the embodiment.
- FIG. 12 is a schematic perspective view for explaining a conventional manufacturing method.
- FIG. 13 is a schematic perspective view for explaining a conventional manufacturing method.
- the method for manufacturing a semiconductor device of this embodiment includes a laser irradiation process for irradiating a laser along a planned division line and a wafer division process for dividing the wafer along the planned division line.
- a laser irradiation process for irradiating a laser along a planned division line and a wafer division process for dividing the wafer along the planned division line.
- the laser irradiation step a plurality of processed parts are formed inside the substrate by irradiating pulsed laser light, and a crack that runs from the processed part to at least the surface of the substrate and connects the adjacent processed parts is generated.
- (Laser irradiation process) 1 and 2 are schematic plan views for explaining a part of main processes as a method for manufacturing a semiconductor device of this embodiment.
- laser irradiation is performed on a wafer 1 that has a substrate 10 and becomes a semiconductor element after division along a planned division line 11 shown in FIG.
- a plurality of processed portions 12 separated from each other can be formed as shown in FIG.
- cracks extending in other directions may occur on the substrate surface in addition to the cracks connecting the processed parts.
- the wafer By generating a crack that connects at least adjacent processing parts, the wafer can be divided with high accuracy.
- the crack which connects the process parts which adjoin at least in several places should just be generated.
- FIG. 2 shows the position of the processing portion 12 for explanation, and the actual processing portion 12 is formed inside the substrate 10 as shown in FIG.
- FIG. 3 is a schematic sectional view taken along line AA of FIG.
- a semiconductor layer 14 is provided on the first main surface 10 a of the substrate 10. Due to the laser irradiation, the processed portion 12 is formed inside the substrate 10, and a crack 13 reaching from the processed portion 12 to the second main surface 10 b of the substrate is generated. By connecting the adjacent processed parts 12 with such cracks 13, linear cracks 13 along the planned dividing lines are generated on the surface of the substrate 10 as shown in FIG. 2. Cracks occur from the machined part.
- a processed part is formed in the vicinity of the condensing position, and compressive stress is generated around the processed part, and it is considered that a crack is generated by the compressive stress.
- means for forming the processed part for example, using a pulse laser
- its energy, frequency, pulse width, spot diameter or shape of the processed part By precisely controlling one or more, most preferably all of the position of the processed portion within the substrate (eg, depth of processed portion from substrate or semiconductor layer, spacing between processed portions, etc.) can be formed appropriately.
- the pulse laser beam can be selected from those capable of processing the inside of the substrate.
- the energy per pulse is suitably 0.8 to 5 ⁇ J, preferably 0.8 to 2.5 ⁇ J.
- the frequency is suitably 50 to 200 kHz, preferably 50 to 100 kHz.
- the pulse width it is suitable to select a range in which processing by multiphoton absorption is possible in order to form a processing portion in which light absorption due to discoloration does not occur. An example is 300 to 50,000 fs. By setting the pulse width within this range, it is possible to prevent discoloration due to re-solidification after melting in the processed portion. This is particularly effective when the semiconductor element obtained after the division is a light emitting element.
- the condensing position of the laser beam is suitably selected in a region where the processed portion does not reach the substrate surface, and the depth from the substrate surface is preferably at least half of the processing spot diameter. Considering the error of the laser device and the unevenness of the substrate surface, the depth is more preferably 5 ⁇ m or more.
- the semiconductor layer is typically damaged when the light collecting position is 30 ⁇ m or less from the semiconductor layer. Therefore, the distance from the semiconductor layer is preferably larger than 30 ⁇ m. In this case, the distance from the substrate surface is suitably 50 ⁇ m or less, preferably 25 ⁇ m or less, and more preferably 10 ⁇ m or less.
- the distance between the processing parts on the substrate surface of the laser beam irradiated along the planned dividing line is typically substantially constant, and at least a range in which a crack connecting the processing parts occurs on the substrate surface is selected.
- the distance between the processed portions is preferably 1 to 4 times the processing spot diameter.
- it is preferable to generate a crack between all the processing parts 12 it is sufficient to generate a crack between at least a plurality of processing parts. If the distance between the processed parts is too small, compressive stress is also generated by the next laser irradiation in the area where the compressive stress is generated by the previous laser irradiation, and the stress cancels each other and disappears between the processed parts. Is thought to be lost due to cracks.
- the distance between the processing parts is equal to or larger than the processing spot diameter on a plane parallel to the main surface of the substrate. ⁇ 4 times is preferable, and 1.5 to 3 times is more preferable.
- the compressive stress reaches deep inside the substrate, it can be easily divided along the planned dividing line substantially perpendicular to the surface of the substrate. It is preferable to make it. Further, by allowing the compressive stress to reach the depth of the substrate in this way, the wafer can be divided with high precision only by one-step processing as shown in FIG.
- the spot diameter ( ⁇ ⁇ m) of the laser beam can be calculated by the following formula.
- ⁇ is the wavelength of the laser beam ( ⁇ m)
- D is the laser beam emission beam diameter ( ⁇ m)
- f is the focal length ( ⁇ m) of the objective lens.
- the position of the processed portion is adjusted in consideration of the influence of deviation from the theoretical spot diameter due to actual processing conditions. Specifically, it is preferable to adjust the diameter of the processing portion formed on the substrate as the processing spot diameter.
- Spot diameter ( ⁇ m) (4 ⁇ ⁇ ⁇ f) / ⁇ ⁇ D
- irradiation is performed from the substrate main surface side closer to the laser beam condensing position, that is, closer to the position where the processed portion is formed. For example, as in the case of the wafer 1 shown in FIG. 3, when a crack is caused to run on the surface of the second main surface 10 b, laser beam is irradiated from the second main surface 10 b side, and the processing unit 12 is moved to the second main surface 10 b. It is preferable to form it close to the surface 10b.
- FIG. 4 is a schematic sectional view taken along line BB in FIG.
- the processed portion 12 has a vertically long shape in accordance with the direction of laser irradiation, and when laser irradiation is performed from directly above the substrate, it has a shape that is long in the depth direction of the substrate as shown in FIG.
- the crack is generated, for example, in the range of the hatched portion rising to the right shown in FIG.
- the crack generated in the hatched portion reaches the second main surface 10b from the processed portion 12, and connects the processed portions 12 at least on the substrate surface.
- the processing portion extends to the substrate surface side from the laser beam condensing position, the distance from the processing portion to the substrate surface is smaller than the distance from the laser light condensing position to the substrate surface.
- the crack is generated around the processed part, and the adjacent processed parts are also connected inside the substrate.
- the compressive stress by laser irradiation was generated deeply by generating the crack deeply.
- the substrate is easily divided in the direction along the laser irradiation direction.
- the distance from the processing part to the substrate surface is at least equal to or less than the distance between the processing parts, and more preferably half or less of the distance between the processing parts. It is thought that cracks can run from the substrate surface to the substrate surface.
- the depth of the crack can be adjusted by controlling the compressive stress applied by laser irradiation. For example, as shown in FIG. 5, it can be formed shallower than in the case of FIG.
- the depth of such a crack can be adjusted by controlling one or more of the wavelength, frequency, pulse waveform, pulse width, focusing accuracy, processing feed rate, processing portion position or shape of the laser to be irradiated.
- Other methods of applying compressive stress to the substrate include grinding and polishing the substrate before laser irradiation to apply residual stress, and holding the laser irradiation side surface of the substrate to be concave during laser irradiation, etc. Is mentioned. It is considered that cracks can be formed deeper by spreading the compressive stress over a wide range.
- FIG. 6 is a schematic cross-sectional view seen from the same direction as FIG. 3, and is a view for explaining a part of main processes as a method for manufacturing a semiconductor device of this embodiment.
- the crack 13 connects the adjacent processed parts 12, that is, the crack 13 is connected to the second main surface 10 b of the substrate 10 in a line shape along the planned division line.
- the crack 15 can also run along the planned dividing line in the same manner as the crack 13, and the wafer 1 can be divided with high accuracy along the planned dividing line.
- segmenting it is preferable to divide
- the processed part and traces of cracks can be confirmed on the side surface of the semiconductor element obtained by dividing the wafer.
- the processed parts 12 that do not reach the substrate surface are typically arranged at substantially constant intervals, and cracks are formed in the region from the processed part 12 to the substrate surface.
- the unevenness caused by the remains.
- Such unevenness can be confirmed, for example, in the upward-sloping hatched portion in FIG. 4 or FIG.
- the processed portion and the unevenness are found in a range of, for example, about 5 to 30 ⁇ m from the substrate surface.
- FIG. 7 is a schematic diagram showing the vicinity of the second main surface 10b of the surface obtained by the division.
- the processing portion 12 provided away from the second main surface 10b of the substrate 10 has a head portion 12a and a foot portion 12b, and the surface of the fine irregularities 16 presumed to be caused by cracks is adjacent to the processing portion 12.
- the head 12a and the foot 12b of the part 12 are connected.
- the processing portion 12 is separated from the second main surface 10b of the substrate 10, and the distance between the second main surface 10b and the processing portion 12 can be about 1 ⁇ m or more. Specifically, about 1 to 15 ⁇ m can be mentioned. Specifically, the length of the processed portion 12 can be about 5 to 30 ⁇ m.
- the length of the head 12a can be about 3 to 10 ⁇ m.
- the unevenness 16 decreases as the distance from the second main surface increases, and tends to be hardly seen farther than the foot.
- the step of the unevenness 16 is several ⁇ m or less, for example, 2 ⁇ m or less.
- the foot of the processed portion may be difficult to distinguish from the unevenness due to the crack, but the uneven region that extends substantially linearly from the head to the first main surface side is visible. Can be seen as a department. Further, in the case of a processed portion formed by multiphoton absorption of laser light, it can be confirmed that the head portion of the processed portion is a smooth surface. As shown in FIG.
- the crack when the processed part has a head part and a foot part, the crack preferably connects at least the adjacent head parts, and more preferably also connects the adjacent foot parts. There is a tendency that cracks are less likely to be connected toward the tip of the foot on the opposite side of the head.
- the processed part having the head on the second main surface side can be formed, for example, by irradiating laser light from the second main surface side.
- the size of the processed portion and the unevenness can be changed according to the thickness of the substrate, and the above numerical range is particularly preferable when a substrate having a thickness of about 50 to 150 ⁇ m is divided.
- the range for forming the processed portion and the unevenness is suitably about 10% or more of the thickness of the substrate, preferably about 80% or less, and preferably about 40% or less. By setting it as such a range, a board
- the wafer usually means a disk-shaped substrate formed by growing a raw material into a columnar shape called an ingot and slicing it thinly.
- a disk-shaped substrate may be used as a “substrate” described later, or one or more of a semiconductor layer, a dielectric layer, an insulator layer, a conductive layer, etc. are laminated on the substrate.
- a thing may be used as a wafer.
- the material of the substrate is selected so that it can be processed with pulsed laser light. Specifically, sapphire, Si, SiC, GaAs, GaN, AlN, or the like can be used.
- the substrate a material on which a semiconductor layer can be grown is selected.
- the sapphire substrate is difficult to cut along the crystal orientation, and if it is split by applying an external force, it may be cleaved in a direction different from the planned dividing line, so the division accuracy is improved by using the method of this embodiment. Can be made.
- the thickness of the substrate is not particularly limited, but can be, for example, 50 to 150 ⁇ m.
- the crack 13 connecting the processed parts 12 may meander. That is, the crack 13 runs around the adjacent processing parts 12.
- the angle of the crack with respect to a straight line connecting adjacent processed parts tends to depend on the crystal system of the substrate material, and can be specifically selected from a range of 10 to 70 degrees.
- the crack is considered to approach a straight line connecting the shortest distance between the processed parts, but from the point of energy efficiency, As shown in FIG. 8, it is preferable to make the crack 13 bypass.
- the distance is at most about 0.5 to 10 ⁇ m. It is possible to divide by a plane substantially perpendicular to the plane. For example, in the case of a hexagonal sapphire substrate, when the surface of the substrate on which the crack runs is a different surface from the A plane and the planned dividing line is a line that intersects the a-axis of the substrate, it runs around the processing parts. There is a tendency to crack. This tendency tends to occur particularly when a sapphire substrate having a C-plane as a main surface is used.
- the sapphire substrate having the C plane as the main surface described here may have a plane inclined several degrees from the C plane as the main surface.
- the light-emitting element is generally a square or a rectangle, and two types of straight lines that intersect substantially perpendicularly are set as the planned dividing lines.
- two types of straight lines that intersect substantially perpendicularly are set as the planned dividing lines.
- the other planned dividing line that intersects substantially perpendicularly with it is set in a direction that is difficult to break. For example, as shown in FIG.
- the second crack 23b that connects the processed parts 22b runs in a substantially straight line along the second dividing line, but the first crack 23a that connects the first processed parts 22a runs around the adjacent first processed parts 22a.
- the first planned dividing line is a line substantially parallel to the m axis of the substrate
- the second planned dividing line is a line substantially parallel to the a axis of the substrate. The second crack is preferable because it is easy to run substantially linearly.
- the direction of the second planned dividing line is considered to be a direction that is easier to crack than the direction of the first planned divided line.
- the method of the present embodiment can also be used only for dividing the first division line, and the second division line can be divided by, for example, cutter scribe.
- the first crack and the second crack that is, the first division planned line and the second division planned line may be formed first.
- semiconductor layer 14 As the semiconductor layer, semiconductor layers made of various semiconductor materials can be selected. For example, a gallium nitride compound semiconductor layer is used. Specific examples include those represented by In x Al y Ga 1-xy N (0 ⁇ x ⁇ 1,0 ⁇ y ⁇ 1,0 ⁇ x + y ⁇ 1).
- the semiconductor layer is usually formed by laminating a first conductive type layer, a light emitting layer, and a second conductive type layer in this order from the substrate side on a sapphire substrate, and the first or second conductive type is an n-type impurity.
- the growth method of these semiconductor layers is not particularly limited, but MOVPE (metal organic chemical vapor deposition), MOCVD (metal organic chemical vapor deposition), HVPE (hydride vapor deposition), MBE (molecular beam epitaxy). Any method known as a semiconductor growth method can be suitably used. In particular, MOCVD is preferable because it can be grown with good crystallinity.
- the semiconductor layer 14 is formed on the first main surface 10a of the substrate 10 and the processed portion 12 is formed on the second main surface 10b side.
- the semiconductor layer 14 it is not necessary to remove the semiconductor layer 14 immediately below the processed portion 12, and the semiconductor layer 14 can also be divided together by the crack 15 extending from the substrate 10.
- the processed portion is formed on the first main surface side where the semiconductor layer is provided, it can be divided in the same manner.
- a processed portion 32 is formed inside the substrate 30 on the first main surface 30 a side.
- the semiconductor layer 34 in a region corresponding to the formation position of the processed portion 32 is removed along the planned dividing line, and then the processed portion 32 is formed to form the crack 33 in the first main surface 30a.
- the semiconductor layer can be prevented from being damaged by the laser irradiation.
- the laser beam irradiation is preferably performed from the first main surface side.
- a wafer having a GaN-based semiconductor layer formed on one main surface of a sapphire substrate having a thickness of about 85 ⁇ m is prepared.
- the semiconductor layer is laminated on the (0001) plane of the sapphire substrate in the order of the n-type semiconductor layer, the light emitting layer, and the p-type semiconductor layer from the sapphire substrate side. Thereafter, a part of the light emitting layer and the p-type semiconductor layer is removed to expose the n-type semiconductor layer, and an n-electrode is formed on the surface of the n-type semiconductor layer and a p-electrode is formed on the surface of the p-type semiconductor layer.
- the wafer dividing line is set in two directions, a direction substantially parallel to the a-axis of the sapphire substrate and a direction substantially perpendicular to it, and the near-infrared laser is set to about 0. ..
- the near-infrared laser Used at an output of 2 W, irradiates a pulse laser beam from the other main surface side of the sapphire substrate along each planned dividing line.
- the condensing position of the laser light is set to a depth of about 5 ⁇ m from the substrate surface, and the distance from the previous condensing position to the next condensing position is set to about 3.5 ⁇ m.
- a light source is arranged on the semiconductor layer side, and when observed with an optical microscope from the other main surface side of the sapphire substrate, a substantially circular processed part and cracks extending from the processed part can be confirmed, and cracks on the substrate surface can be confirmed. It can be confirmed that at least a part is running so as to connect the processed part and the processed part. Comparing the cracks that connect the processed parts in the two-way division lines, the cracks in the division lines that are substantially perpendicular to the a axis are meandering larger than the cracks in the division lines that are substantially parallel to the a axis.
- a breaking blade is pressed along the planned dividing line of the wafer, and an external force is applied to squeeze and obtain a substantially square semiconductor element having a side of about 250 ⁇ m.
- the side surface of the element is divided substantially perpendicularly to the surface of the sapphire substrate, and a processed portion extending linearly in the depth direction of the substrate can be confirmed near the substrate surface. No discoloration is seen in the processed part, and it is presumed that it was formed by multiphoton absorption by laser irradiation.
- the distance from the processed part to the substrate surface is about 1 to 10 ⁇ m, the maximum width of the processed part is about 0.5 to 2 ⁇ m, and it can be confirmed that the processed part to the substrate surface has an irregular surface. .
- the processed portion and the uneven surface are formed to a depth of about 15 to 20 ⁇ m from the substrate surface.
- the surface deeper than that, that is, the surface on the semiconductor layer side, is a flat surface or a surface in which flat surfaces are connected stepwise, and is presumed to be a surface divided after laser irradiation.
- This embodiment is the same as the first embodiment except that the distance between the converging positions of the laser beams is set to about 5 ⁇ m when irradiating the laser beams along the planned dividing line in a direction substantially parallel to the a-axis.
- a semiconductor element is manufactured.
- the surface of the sapphire substrate is observed after laser irradiation, a substantially circular processed part and a crack extending from the processed part can be confirmed, and at least a part of the crack on the substrate surface is running so as to connect the processed part and the processed part. Can be confirmed.
- the side surface of the element is divided substantially perpendicularly to the surface of the sapphire substrate.
- the manufacturing method of the present invention can be applied to an element that divides a wafer having a substrate into elements.
- the present invention can be applied to a semiconductor element in which a semiconductor layer is provided on a substrate, and can be applied to a light emitting element such as an LED or LD, an optical element including a light receiving element, or a semiconductor element including a transistor such as HEMT or FET.
Abstract
Description
また、図13に示すように、半導体層52が設けられた基板50内部にレーザ照射による改質部51を複数段形成し、更にレーザ照射によって連続した溝部53を基板50の表面に形成することにより、複数段の改質部51及び溝部53に沿った分離面から各半導体発光素子を分離する方法も提案されている(特開2008-98465号公報及び特開2007-324326号公報参照)。
亀裂は前記基板の内部において隣接する前記加工部を繋ぐ。
加工部は頭部と足部とを有し、前記亀裂は隣接する前記加工部の頭部及び足部を繋ぐ。
パルスレーザ光の集光位置と前記基板の表面との距離は、前記パルスレーザ光の加工スポット径の半分以上、25μm以下である。
パルスレーザ光の集光位置と前記基板の表面との距離は、5μm以上、25μm以下である。
加工部間の距離は、前記パルスレーザ光の加工スポット径以上である。
加工部と前記亀裂は、前記基板の厚みの10%以上、80%以下の範囲内に形成する。
分割予定線は第1分割予定線であり、前記亀裂は第1亀裂であり、
レーザ照射工程において、更に、前記第1分割予定線と略垂直な第2分割予定線に沿って前記基板の内部にパルスレーザ光を集光して、前記基板の内部に離間した複数の加工部を分割予定線に沿って形成すると共に、前記加工部から少なくとも前記基板の表面まで走り、隣接する前記加工部を繋ぐ第2亀裂を発生させ、
ウエハ分割工程において、更に、前記第2分割予定線に沿って前記ウエハを分割する。
第1亀裂は隣接する前記加工部間を迂回して走り、前記第2亀裂は、前記第2分割予定線に沿って走る。
前記第1分割予定線に沿って形成される前記加工部の間隔は、前記第2分割予定線に沿って形成される前記加工部の間隔よりも小さい。
前記基板は第1の主面と第2の主面とを有し、前記第1の主面に半導体層が設けられており、前記レーザ照射工程において、前記第2の主面側から前記パルスレーザ光を照射する。
前記パルスレーザ光の集光位置と前記半導体層との距離は、30μmより大きい。
加工部は多光子吸収による加工部である。
基板はサファイア基板である。
第2の主面はA面と異なる面であり、前記第1分割予定線は前記基板のa軸と交差する線である。
図1及び図2は、本実施形態の半導体素子の製造方法として主要な工程の一部を説明する平面模式図である。
基板10を有し、分割後に半導体素子となるウエハ1に対して、まず、図1に示す分割予定線11に沿ってレーザ照射を行う。基板10の内部にパルスレーザ光を集光させることで、図2に示すように互いに離間した加工部12を複数形成することができる。また、同時に、加工部12から少なくとも基板10の表面まで走り、隣接する加工部12を繋ぐ亀裂13を発生させることができる。なお、図示しないが、基板表面において、加工部間を繋ぐ亀裂以外にも他の方向に伸びる亀裂が生じる場合がある。少なくとも隣接する加工部を繋ぐ亀裂を発生させることで、ウエハを精度良く分割することができる。ここでは、全ての加工部12から基板10の表面へ走る亀裂を生じさせることが好ましいが、少なくとも複数の加工部で、基板の表面に走る亀裂を生じさせればよい。また、全ての隣接する加工部を繋ぐように亀裂を生じさせることが好ましいが、少なくとも複数個所で隣接する加工部を繋ぐ亀裂が生じさせればよい。さらに、1つの加工部に対して基板の表面まで走る亀裂と、隣接する加工部に及ぶ亀裂とを発生させることが好ましいが、基板の表面まで走る亀裂と、隣接する加工部間を繋ぐ亀裂とが、異なる加工部に形成されていてもよい。
このように、加工部を形成する場合に、後述するように、加工部を形成するための手段(例えば、パルスレーザを用いる)、そのエネルギー、周波数、パルス幅、加工部のスポット径又は形状、基板内部における加工部の位置(例えば、基板又は半導体層からの加工部の深さ、加工部間の間隔など)の1以上、最も好ましくは全てを厳密に制御することによって、加工部と亀裂とを適切に形成することができる。
スポット径(φμm)=(4・λ・f)/π・D
図6に示すように、加工部12や亀裂13からクラック15を第1の主面10a側へと走らせ、分割予定線に沿ってウエハを分割する。分割は、例えば、ウエハの分割予定線に沿ってブレイキング刃を押し当て、外力を加えて押し割るなど、公知の方法を利用して行うことができる。
図6は図3と同じ方向から見た断面模式図であり、本実施形態の半導体素子の製造方法として主要な工程の一部を説明する図である。亀裂13は上述したように隣接する加工部12を繋いでおり、つまり、亀裂13は基板10の第2の主面10bにおいて分割予定線に沿った線状に繋がっている。これによってクラック15も亀裂13と同様に分割予定線に沿って走らせることができ、ウエハ1を分割予定線に沿って精度良く分割することができる。なお、分割する際は亀裂の少なくとも一部に沿って分割することが好ましく、分割により得られる面を亀裂に完全に沿った面とする必要はない。分割後の基板表面や内部に亀裂の一部が残る場合もある。
図7に示すように加工部が頭部と足部を有する場合、亀裂は少なくとも隣接する頭部を繋ぐことが好ましく、隣接する足部も繋ぐことがより好ましい。頭部と反対側の足部先端側になるほど亀裂が繋がり難い傾向にある。第2の主面側に頭部が存在する加工部は、例えば、第2の主面側からレーザ光を照射することで形成できる。加工部や凹凸の大きさは、基板の厚みに応じて変更することができ、上述の数値範囲は、厚さ50~150μm程度の基板を分割する場合に特に好ましい。加工部及び凹凸を形成する範囲は、基板の厚みの約10%以上であることが適しており、約80%以下であることが好ましく、約40%以下であることが好ましい。このような範囲とすることで、基板を効率よく分割でき、また、半導体層の損傷を防止できる。
ウェハとは、通常、原料物質をインゴットとよばれる柱状に成長させ、薄くスライスして作成した盤状の基体を意味する。本願においては、このような盤状の基体のみを後述する「基板」としてもよいし、この基板上に半導体層、誘電体層、絶縁体層、導電層等の1以上が積層された状態のものをウェハとしてもよい。
(基板10)
基板の材料は、パルスレーザ光で加工可能なものを選択する。具体的には、サファイア、Si、SiC、GaAs、GaN、AlN等を用いることができる。典型的には、基板としては、その上に半導体層を成長させることができる材料を選択する。サファイア基板は結晶方位に沿った割断面ができ難く、外力を加えて押し割ると分割予定線とは異なる方向へ割断される場合があるため、本実施形態の方法を用いることで分割精度を向上させることができる。基板の厚みは特に限定しないが、例えば50~150μmとすることができる。このような厚みの基板に対して本実施形態の方法により加工部を形成することで、複数段のレーザ加工を必要とせずにウエハを分割することができる。
例えば、図9に示すように、ウエハ2の基板20内部に第1分割予定線に沿った第1加工部22aと第2分割予定線に沿った第2加工部22bとを形成すると、第2加工部22bを繋ぐ第2亀裂23bは第2分割線に沿って略直線状に走るが、第1加工部22aを繋ぐ第1亀裂23aは隣接する第1加工部22a間を迂回して走る。基板としてC面を主面とするサファイア基板を用いる場合は、第1分割予定線を基板のm軸と略平行な線とし、第2分割予定線を基板のa軸と略平行な線とすると、第2亀裂が略直線状に走り易く、好ましい。
本実施形態の方法は、第1分割予定線の分割にのみ用いることもでき、第2分割予定線は、例えばカッタースクライブによって分割することができる。
なお、本実施形態の方法では、第1亀裂と第2亀裂、つまり、第1分割予定線と第2分割予定線とは、いずれを先に形成してもよい。
半導体層としては、種々の半導体材料からなる半導体層を選択することができ、例えば窒化ガリウム系化合物半導体層とする。具体的には、InxAlyGa1-x-yN(0≦x≦1、0≦y≦1、0≦x+y≦1)で表されるものが挙げられる。半導体層は、通常、サファイア基板上に、第1導電型層、発光層、第2導電型層が基板側からこの順に積層されており、第1又は第2の導電型として、n型不純物であるSi、Ge、Sn、S、O、Ti、Zr、CdなどのIV族元素、あるいはVI族元素等のいずれか1つ以上を含有するか、p型不純物であるMg、Zn、Be、Mn、Ca、Sr等を含有していてもよい。
これらの半導体層の成長方法としては、特に限定されないが、MOVPE(有機金属気相成長法)、MOCVD(有機金属化学気相成長法)、HVPE(ハイドライド気相成長法)、MBE(分子線エピタキシー法)など、半導体の成長方法として知られている全ての方法を好適に用いることができる。特に、MOCVDは結晶性良く成長させることができるので好ましい。
その後、発光層及びp型半導体層の一部を除去してn型半導体層を露出させ、n型半導体層表面にn電極、p型半導体層表面にp電極をそれぞれ形成する。
凹凸面は亀裂により形成されたと推測され、加工部間の面も同様の凹凸面であることが確認できる。加工部及び凹凸面は基板表面から15~20μm程度の深さにまで形成されている。それよりも深い面、つまり半導体層側の面は、平坦な面もしくは平坦な面が階段状に連なった面であり、レーザ照射後に分割された面であると推測される。
レーザ照射後、サファイア基板表面を観察すると、略円形状の加工部と、加工部から伸びる亀裂が確認でき、基板表面における亀裂の少なくとも一部が加工部と加工部を繋ぐように走っていることが確認できる。ウエハ分割後、得られる半導体素子を観察すると、素子側面はサファイア基板表面に対して略垂直に分割されている。
10、20、30 基板
10a、30a 第1の主面、10b、30b 第2の主面
11 分割予定線
12、32 加工部
12a 頭部、12b 足部
13、33 亀裂
14、34 半導体層
15 クラック
16 凹凸
22a 第1加工部、22b 第2加工部
23a 第1亀裂、23b 第2亀裂
40、50 基板
41 変質領域、51 改質部、53 溝部
42、52 半導体層
Claims (15)
- ウエハを構成する基板の内部にパルスレーザ光を集光して、前記基板の内部に離間した複数の加工部を分割予定線に沿って形成すると共に、前記加工部から少なくとも前記基板の表面まで走り、隣接する前記加工部を繋ぐ亀裂を発生させるレーザ照射工程と、
前記分割予定線に沿って前記ウエハを分割するウエハ分割工程と
を有する半導体素子の製造方法。 - 前記亀裂は前記基板の内部において隣接する前記加工部を繋ぐ請求項1記載の半導体素子の製造方法。
- 前記加工部は頭部と足部とを有し、前記亀裂は隣接する前記加工部の頭部及び足部を繋ぐ請求項2記載の半導体素子の製造方法。
- 前記パルスレーザ光の集光位置と前記基板の表面との距離は、前記パルスレーザ光の加工スポット径の半分以上、25μm以下である請求項1~3のいずれか1項に記載の半導体素子の製造方法。
- 前記パルスレーザ光の集光位置と前記基板の表面との距離は、5μm以上、25μm以下である請求項1~3のいずれか1項に記載の半導体素子の製造方法。
- 前記加工部間の距離は、前記パルスレーザ光の加工スポット径以上である請求項1~5のいずれか1項に記載の半導体素子の製造方法。
- 前記加工部と前記亀裂は、前記基板の厚みの10%以上、80%以下の範囲内に形成する請求項1~6のいずれか1項に記載の半導体素子の製造方法。
- 前記分割予定線は第1分割予定線であり、前記亀裂は第1亀裂であり、
前記レーザ照射工程において、更に、前記第1分割予定線と略垂直な第2分割予定線に沿って前記基板の内部にパルスレーザ光を集光して、前記基板の内部に離間した複数の加工部を分割予定線に沿って形成すると共に、前記加工部から少なくとも前記基板の表面まで走り、隣接する前記加工部を繋ぐ第2亀裂を発生させ、
前記ウエハ分割工程において、更に、前記第2分割予定線に沿って前記ウエハを分割する請求項1~7のいずれか1項に記載の半導体素子の製造方法。 - 前記第1亀裂は隣接する前記加工部間を迂回して走り、前記第2亀裂は、前記第2分割予定線に沿って走る請求項8記載の半導体素子の製造方法。
- 前記第1分割予定線に沿って形成される前記加工部の間隔は、前記第2分割予定線に沿って形成される前記加工部の間隔よりも小さい請求項8又は9記載の半導体素子の製造方法。
- 前記基板は第1の主面と第2の主面とを有し、前記第1の主面に半導体層が設けられており、前記レーザ照射工程において、前記第2の主面側から前記パルスレーザ光を照射する請求項1~10のいずれか1項に記載の半導体素子の製造方法。
- 前記パルスレーザ光の集光位置と前記半導体層との距離は、30μmより大きい請求項11に記載の半導体素子の製造方法。
- 前記加工部は多光子吸収による加工部である請求項1~12のいずれか1項に記載の半導体素子の製造方法。
- 前記基板はサファイア基板である請求項1~13のいずれか1項に記載の半導体素子の製造方法。
- 前記第2の主面はA面と異なる面であり、前記第1分割予定線は前記基板のa軸と交差する線である請求項14記載の半導体素子の製造方法。
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BR122019015544B1 (pt) | 2020-12-22 |
EP2402984A1 (en) | 2012-01-04 |
US8728916B2 (en) | 2014-05-20 |
KR101697383B1 (ko) | 2017-01-17 |
CN102326232B (zh) | 2016-01-20 |
TWI564947B (zh) | 2017-01-01 |
KR20110122857A (ko) | 2011-11-11 |
JPWO2010098186A1 (ja) | 2012-08-30 |
US20110298084A1 (en) | 2011-12-08 |
CN102326232A (zh) | 2012-01-18 |
US9324791B2 (en) | 2016-04-26 |
EP2402984B1 (en) | 2018-01-10 |
JP5573832B2 (ja) | 2014-08-20 |
BRPI1008737A2 (pt) | 2016-03-08 |
EP2402984A4 (en) | 2015-03-25 |
TW201041027A (en) | 2010-11-16 |
US20140217558A1 (en) | 2014-08-07 |
BRPI1008737B1 (pt) | 2019-10-29 |
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