WO2010088015A2 - Plasma-enhanced atomic layer deposition of conductive material over dielectric layers - Google Patents

Plasma-enhanced atomic layer deposition of conductive material over dielectric layers Download PDF

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Publication number
WO2010088015A2
WO2010088015A2 PCT/US2010/020443 US2010020443W WO2010088015A2 WO 2010088015 A2 WO2010088015 A2 WO 2010088015A2 US 2010020443 W US2010020443 W US 2010020443W WO 2010088015 A2 WO2010088015 A2 WO 2010088015A2
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plasma
metal
reactant
layer
barrier
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French (fr)
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WO2010088015A3 (en
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Robert B. Milligan
Dong Li
Steven Marcus
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ASM America Inc
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ASM America Inc
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Priority to JP2011548001A priority Critical patent/JP5727390B2/ja
Priority to KR1020157031857A priority patent/KR101672417B1/ko
Publication of WO2010088015A2 publication Critical patent/WO2010088015A2/en
Publication of WO2010088015A3 publication Critical patent/WO2010088015A3/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/121—Arrangements for protection of devices protecting against mechanical damage
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/36—Carbonitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C23C16/45542—Plasma being used non-continuously during the ALD reactions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01318—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 

Definitions

  • the invention relates generally to methods and compositions for reducing the detrimental effects of plasma on metal oxide dielectric layers during plasma- enhanced atomic layer deposition (PEALD) of overlying conductive materiala
  • PEALD plasma- enhanced atomic layer deposition
  • PEALD Plasma-enhanced atomic layer deposition
  • H* hydrogen
  • H* + H* hydrogen
  • a second reactant is an organometallic or inorganic metal source chemical.
  • PEALD can be used to deposit a number of refractory metals and conductive metal alloys. These materials can be used, for example, as gate electrodes or capacitor electrodes in integrated circuits devices. Frequently, a conductive layer is deposited on a metal oxide dielectric. Problems can arise when the plasma used in the deposition process reacts with the metal-oxide dielectric in the first few deposition cycles and at least partially reduces the metal-oxide dielectric back to unoxidized metal or to a substoichiometric metal oxide state. This can result in poor adhesion between the metal oxide dielectric and the overlying conductive material.
  • the methods comprise depositing a plasma barrier layer directly over a metal oxide dielectric layer on a substrate by an atomic layer deposition (ALD) process.
  • ALD atomic layer deposition
  • the ALD process comprises alternately and sequentially contacting the substrate with a metal reactant and a non-plasma reactant.
  • a conductive layer is subsequently deposited directly over the plasma barrier layer by a plasma-enhanced atomic layer deposition (PEALD) process.
  • PEALD plasma-enhanced atomic layer deposition
  • methods of forming a gate electrode comprising depositing a plasma barrier layer with a thickness of about 1 to about 5 nm directly over a dielectric layer on a substrate in a reaction space by a non-plasma ALD process and subsequently depositing a conductive material directly over the plasma barrier layer by a plasma-enhanced ALD process.
  • an amorphous TaCN layer is deposited directly over a metal oxide dielectric layer on a substrate by a non-plasma ALD process.
  • a TaNC layer is deposited directly on the amorphous layer by a PEALD process.
  • an integrated circuit device comprises a dielectric layer, a plasma barrier layer over the dielectric layer, and a conductive layer.
  • the plasma barrier may comprise a first metal and may be between about 0.25 nm and about 1.75 nm thick.
  • the conductive layer may comprise a second metal that is different from the first metal of the plasma barrier.
  • the first metal and second metal are the same.
  • the first and second metal may comprise TaCN.
  • FIG. 1 is a block diagram of a process of forming a conductive layer over a dielectric material according to some embodiments.
  • FIGS. 2A-C are schematic illustrations of a method of forming a conductive layer over a dielectric material according to some embodiments.
  • PEALD plasma-enhanced atomic layer deposition
  • a thin layer of the metal oxide may be reduced to unoxidized metal or a substoichiometric metal oxide state.
  • a conductive material such as metal
  • this may result in poor adhesion between the metal and the underlying metal oxide layer, making PEALD a less desirable method for use in this context.
  • a plasma barrier or interface layer between the metal and metal oxide, as described herein, the detrimental effects of plasma on the dielectric layer can be reduced or eliminated with little to no effect on the device characteristics.
  • the plasma barrier layer is an amorphous metal interface layer.
  • the metal reactant that is used to deposit the plasma barrier layer can be the same reactant that is used in the subsequent PEALD process for depositing an overlying conductive layer, thus improving the efficiency of the process.
  • a plasma barrier such as a TaCN or TiN film is formed over a metal oxide dielectric layer, such as an Al 2 O 3 dielectric layer, on a substrate by a non-plasma ALD process.
  • each ALD cycle comprises two distinct deposition steps or phases.
  • a first reactant comprising a metal such as tantalum is pulsed to the reaction space and chemisorbs onto the substrate surface, forming no more than about one monolayer on the surface of the substrate.
  • the metal source material in this phase is selected such that, under the preferred conditions, the amount of source material that can be bound to the surface is determined by the number of available binding sites and by the physical size of the chemisorbed species (including ligands).
  • the chemisorbed layer left by a pulse of the metal source chemical is self-terminated with a surface that is non- reactive with the remaining chemistry of that pulse.
  • the metal is tantalum and the metal source chemical is TBTDET. In other embodiments the metal is titanium and the metal source chemical is TiCl 4 .
  • Excess metal source material and reaction byproducts are removed from the reaction space, e.g., by purging with an inert gas. Excess metal source material and any reaction byproducts may be removed with the aid of a vacuum generated by a pumping system.
  • a second reactant also referred to herein as a "second source chemical” is pulsed into the reaction space to react with the metal-containing molecules left on the substrate surface by the preceding pulse.
  • the second source chemical is a nitrogen source compound, preferably NH 3 , and nitrogen is incorporated into the film by the interaction of the second source chemical with the monolayer left by the metal source material, hi preferred embodiments, reaction between the second source chemical and the chemisorbed metal species produces a metal nitride film over the substrate.
  • any excess second source chemical and reaction byproducts, if any, are removed from the reaction space by a purging gas pulse and/or vacuum generated by a pumping system.
  • Purge gas may be any inert gas, such as, without limitation, argon (Ar) or helium (He).
  • the first and second phases are repeated to form a plasma barrier of a desired thickness over the dielectric layer.
  • the plasma barrier layer may comprise, for example, amorphous TaCN, as in the case where the metal reactant is TBTDET, or TiN, where the metal reactant is TiCl 4 . In some embodiments the plasma barrier layer is about 2-5nm thick.
  • a conductive layer is subsequently deposited by a PEALD process over the plasma barrier.
  • the substrate comprising the plasma barrier is exposed to the same metal source chemical that was used in the ALD process for forming the plasma barrier.
  • the substrate is exposed to TBTDET.
  • TiCl 4 was used to form a plasma barrier layer, TiCl 4 is used. Excess metal source material and reaction byproducts (if any) are removed from the reaction space, e.g., by purging with an inert gas and/or with the aid of a vacuum pump.
  • a plasma reactant is provided to the reaction space to react with the metal-containing molecules left on the substrate surface by the preceding pulse.
  • the plasma is generated remotely and pulsed to the reaction space
  • a reactant is provided to the reaction space and the plasma is formed in situ. The reaction between the second source chemical and the chemisorbed metal species produces a conductive film over the substrate.
  • the first and second phases are repeated to produce a film of the desired thickness, hi some embodiments, such as when the metal reactant is TBTDET, the plasma reactant may be hydrogen plasma, hi other embodiments, such as when the metal reactant is TiC14, the plasma reactant may be an NH*, NH 2 *, NH 3 *, or N* + H* plasma.
  • the plasma barrier protects the underlying dielectric from the effects of the PEALD process, such that the qualities of the dielectric layer are not significantly changed during the PEALD process.
  • FIG. 1 illustrates an exemplary process flow.
  • a dielectric layer is formed by depositing a dielectric material over a substrate 110.
  • the dielectric material is a metal oxide in some embodiments.
  • the dielectric material may comprise one or more of Ta 2 O 5 , TiO 2 , HfO 2 , ZrO 2 , Al 2 O 3 , La 2 O 3; HfSiO x , HfZrO x , HfAlO x , and LnAlO x .
  • Other known dielectric materials may also be used and can be selected by the skilled artisan based on the particular circumstances.
  • the dielectric layer is an Al 2 O 3 layer.
  • the dielectric layer may be formed by any deposition process, such as by ALD or by chemical vapor deposition (CVD).
  • a substrate is provided on which a dielectric layer has been formed and step 110 may be omitted.
  • a plasma barrier layer is deposited directly over the dielectric material 120.
  • the plasma barrier layer may also be deposited by any process. However, the deposition process typically will not negatively impact the properties of the dielectric layer.
  • the plasma barrier layer is deposited by a non-plasma atomic layer deposition (ALD) process 120.
  • a non-plasma ALD process is one that does not use a plasma reactant.
  • a conductive material (or refractory metal) is deposited directly over the plasma barrier by a PEALD process 130.
  • a PEALD process 130 the potentially detrimental effect of the plasma during at least the first several PEALD cycles is reduced or avoided and good adhesion may be maintained between the conductive material and the underlying dielectric material.
  • the substrate is typically a work piece on which deposition is desired and can comprise a variety of materials and structures.
  • the substrate may comprise silicon, silica, coated silicon, metal, such as copper or aluminum, dielectric materials, nitrides, oxides and/or combinations of materials.
  • the reaction space is typically a volume in a reactor in which conditions can be adjusted to effect film growth by ALD processes.
  • deposition of the plasma barrier layer and the overlying conductive material takes place in the same reaction space.
  • the reaction space can include surfaces subject to all reaction gas pulses from which gases or particles can flow to the substrate, by entrained flow or diffusion, during normal operation.
  • the reaction space can be, for example, the reaction chamber in a single- wafer ALD reactor or the reaction chamber of a batch ALD reactor, where deposition on multiple substrates takes place at the same time.
  • chemical vapor deposition reactors can be adapted for use in the methods.
  • the reactor can be configured for plasma generation, either in situ or remote. Exemplary reactors include the EmerALDTM and PulsarTM reactors available from ASM America (Phoenix, AZ).
  • the substrate may already comprise a dielectric material prior to being introduced to the reaction space.
  • the dielectric material may be deposited by any standard deposition process including, but not limited to, physical vapor deposition (PVD, i.e., sputtering), chemical vapor deposition (CVD), and ALD.
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • ALD ALD
  • the dielectric material is deposited onto the substrate in the same reaction space as subsequent deposition of the plasma barrier layer and/or the conductive material.
  • the dielectric material is deposited in a different reaction space.
  • ALD is a self- limiting process, whereby sequential and alternating pulses of reactants are used to deposit no more than one atomic (or molecular) monolayer of material per deposition cycle.
  • the deposition conditions and precursors are selected to ensure self-saturating reactions, such that an adsorbed layer in one pulse leaves a surface termination that is non-reactive with the gas phase reactants of the same pulse.
  • a subsequent pulse of a different reactant reacts with the previous termination to enable continued deposition.
  • each cycle of alternated pulses leaves no more than about one monolayer of the desired material.
  • one deposition cycle comprises exposing the substrate to a first reactant, removing any unreacted first reactant and reaction byproducts from the reaction space, exposing the substrate to a second reactant, followed by a second removal step.
  • the first reactant is preferably a metal precursor and the second reactant is preferably a non-plasma reactant that reacts with the metal reactant to form the desired film.
  • the ALD-type process may begin with provision of either reactant. Depending on the particular material being deposited, additional non-plasma reactants may be provided alternately and sequentially in the ALD process to provide a material of the desired composition.
  • inert gases such as Ar
  • the material of the plasma barrier and thickness are selected such that the PEALD process for depositing the overlying conductive material does not significantly change the characteristics of the underlying dielectric layer.
  • the plasma barrier layer typically comprises a metal and may be, for example, an elemental metal, a conductive metal nitride, a metal carbide-nitride, a metal carbide, a metal silicon nitride, or a metal silicon carbide.
  • the ALD process for depositing the plasma barrier layer preferably uses the same metal precursor as the subsequent PEALD process for depositing the overlying conductive layer.
  • the plasma barrier and the overlying conductive layer comprise the same metal.
  • the plasma barrier may comprise, for example, one or more metals selected from the group consisting of titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), manganese (Mn), rhenium (Re), iron (Fe), cobalt (Co), nickel (Ni), palladium (Pd), platinum (Pt), rhodium (Rh), iridium (Ir), ruthenium (Ru) and osmium (Os).
  • metals selected from the group consisting of titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), manganese (Mn), rhenium (Re),
  • Metal precursors that can be used in the ALD and PEALD processes are known in the art and include both organic and inorganic metal compounds.
  • metal halide reactants such as, e.g., TaCl 5 and HfCl 4
  • metal precursors are generally inexpensive and relatively stable, but at the same time reactive towards different types of surface groups, hi other embodiments, the metal precursor is a vapor phase species comprising at least one of Ti, Hf, Zr, Si, Al, Ta, Sr, Ba, Sc, Y, La, Eu, and Dy.
  • the metal reactant is a titanium reactant.
  • the titanium reactant may be, for example, TiCl 4 .
  • the metal reactant is a tantalum reactant. Li some embodiments the tantalum reactant is a tantalum halide. In other embodiments the tantalum reactant is tert-butylimido- tris(diethylamido)tantalum (TBTDET).
  • the plasma barrier is a conductive metal nitride and a non-plasma reactant comprises a nitrogen source that reacts with adsorbed metal reactant to form a metal nitride.
  • the plasma barrier is a conductive metal carbide and the non-plasma reactant comprises a carbon source that reacts with the adsorbed metal reactant to form a metal carbide.
  • the plasma barrier is a conductive metal nitride-carbide and a carbon source is also utilized. The carbon source and the nitrogen source may be the same compound or may be different compounds.
  • the nitrogen source compound may be, for example, one or more of ammonia (NH 3 ) and its salts, hydrogen azide (HN 3 ) and the alkyl derivates thereof, hydrazine (N 3 H 4 ) and salts of hydrazine, alkyl derivates of hydrazine, primary, secondary and tertiary amines, tertbutylamide, CH 3 N 3 , hydrazine hydrochloride, dimethyl hydrazine, hydroxylamine hydrochloride, methylamine, diethylamine, and triethylamine.
  • NH 3 ammonia
  • HN 3 hydrogen azide
  • N 3 H 4 hydrazine
  • N 3 H 4 hydrazine
  • alkyl derivates of hydrazine alkyl derivates of hydrazine
  • primary, secondary and tertiary amines tertbutylamide
  • CH 3 N 3 tertbutylamide
  • a non-plasma reactant is a reducing agent that reduces the metal reactant to an elemental metal.
  • a metal reactant is provided into the reaction chamber. After sufficient time for the metal reactant to adsorb on the substrate surface, the excess metal reactant and reaction by-products, if any, are removed from the reaction space. This may be accomplished, for example, by purging and/or by evacuating the reaction space with the aid of a vacuum pump. In embodiments where the precursor is provided with the aid of an inert carrier gas, the same gas may be used to purge the reaction space by stopping the flow of the precursor into the stream of the carrier gas, while continuing to flow the carrier gas.
  • a second, non-plasma reactant is then introduced into the reaction space and removed in like manner after sufficient time for the non-plasma reactant to react with the previously adsorbed metal reactant. Additional non-plasma reactants can be provided in the ALD process to achieve the desired composition.
  • FIG 2A illustrates a substrate 210 with an overlying dielectric layer 200.
  • a plasma barrier 220 is deposited by a non-plasma ALD process directly over the dielectric layer 200.
  • the plasma barrier may generally be about 0.1 run to about 50 ran.
  • the plasma barrier may be about 0.5 nm to about 5 ran. In other embodiments, the plasma barrier may be about 0.5 nm to about 3.5 nm.
  • the ALD cycle for depositing the plasma barrier material is repeated more than 120 times, preferably at least 200 times to form a plasma barrier prior to PEALD of the conductive material.
  • a PEALD process is used to deposit a conductive material or refractory metal directly over the plasma barrier, hi some embodiments, the same metal reactant that is used in the deposition of the plasma barrier is used in the deposition of the overlying conductive material.
  • the same metal reactant that was used in the non-plasma ALD cycle may be used in the PEALD cycle, hi other embodiments, different metal reactants are used.
  • the plasma reactant may react with the plasma barrier. In some embodiments, the plasma reactant reacts with the plasma barrier in about the first about 10 to 100 PEALD cycles.
  • the plasma reactant changes the properties of at least a portion of the plasma barrier, for example through one or more of stoichiometric change, crystallization, increased density and lowering resistivity.
  • the plasma barrier is formed of an amorphous metal, during PEALD, a portion of the amorphous metal may be converted into a crystalline metal phase, hi some embodiments, the properties of about 1 to 5 nm, more preferably about 3 to 4 nm of the plasma barrier are changed.
  • the remaining portion of the plasma barrier is preferably thin enough that it does not set the work function or adversely impact the device characteristics, hi some embodiments, only about 1 to 5 nm, more preferably about 1 to 2 nm of the plasma barrier remains unchanged following PEALD deposition of the overlying conductive material, hi some embodiments, between about 0.25 nm and about 1.75 nm of the plasma barrier remains unchanged following PEALD deposition of the overlying conductive material, hi still other embodiments, between about 0.125 nm and about 0.875 nm or between about 0.05 nm and about 0.35 nm of the plasma barrier remains unchanged.
  • the plasma barrier comprises an amorphous material, a portion of which is converted to a crystalline form during PEALD of the overlying conductive material.
  • the converted crystalline material from the plasma barrier may be the same in material and structure as and may substantially align with the PEALD deposited conductive material.
  • a skilled artisan would therefore consider the converted portion of the plasma barrier in determining the desired thickness of the conductive material.
  • the plasma barrier may be deposited as an amorphous metal nitride. Following PEALD of an overlying conductive metal nitride, a portion of the amorphous metal nitride of the barrier layer is converted to the same crystalline metal nitride as the overlying conductive layer.
  • the overlying conductive material may be any conductive material known in the art, including conductive metal alloys.
  • the conductive material may be TaCN or TiN.
  • the conductive material is a refractory metal.
  • a metal precursor and one or more plasma reactants are introduced into the reaction chamber alternately and sequentially.
  • the metal reactant can be generally as described above with respect to the plasma barrier.
  • the plasma reactant may be a plasma-excited species of hydrogen or a hydrogen-nitrogen plasma generated by, e.g., an in situ or remote plasma generator. Additional reactants may be utilized to achieve the desired composition, as will be recognized by the skilled artisan.
  • Plasma-excited species of hydrogen may include, without limitation, hydrogen radicals (H*) and hydrogen cations (e.g., H + , H 2 + ), plasma, or other plasma- excited species known to a person skilled in the art.
  • Plasma-excited species of hydrogen may be formed in situ or remotely, for example from molecular hydrogen (H 2 ) or hydrogen-containing compounds (e.g., silane, diborane, etc).
  • the plasma reactant is a hydrogen-nitrogen plasma (for example, NH*, NH 2 *, NH 3 *, or N* + H*) or a hydrogen-carbon plasma (CH*).
  • more than one plasma reactant is used to produce a conductive material with the desired composition.
  • a metal reactant is provided into the reaction chamber.
  • the metal reactant is the same reactant that was used to deposit the plasma barrier layer.
  • the excess metal reactant and reaction by-products, if any, are removed from the reaction space. This may be accomplished, for example, by purging and/or by evacuating the reaction space with the aid of a vacuum pump.
  • the same gas may be used to purge the reaction space by stopping the flow of the precursor into the stream of the carrier gas, while continuing to flow the carrier gas.
  • the second precursor is then introduced into the reaction space and removed in like manner after sufficient time for the second precursor to adsorb onto the substrate surface.
  • the plasma reactant in the first about 10 to about 100 PEALD cycles may react with the plasma barrier 220.
  • the thickness of the conductive layer 230 increases during deposition, less plasma reacts with the plasma barrier 220.
  • FIG. 2C shows the structure of Fig. 2B after deposition of an overlying conductive layer according to some embodiments.
  • the structure comprises a dielectric material 200, such as a metal oxide, over the substrate 210.
  • the plasma barrier 220 is formed on the dielectric material 200.
  • the PEALD process forms a conductive material 230, for example a crystalline conductive metal nitride, over the dielectric material 200.
  • the plasma reactant from the PEALD process reacts with the plasma barrier 220, at least a portion 240 of the plasma barrier 220 is converted to a different phase, while a portion remains in the unconverted phase 250.
  • the unconverted phase 250 is an amorphous material, such as a metal
  • the converted phase 240 is the same material, but in a crystalline phase.
  • the converted metal phase 240 is the same as the overlying conductive material 230.
  • the converted crystalline material 240 and the conductive material 230 substantially align in their crystalline structure to form a consolidated conductive layer 260.
  • the converted plasma barrier 240 is between about 1 nm and about 5 nm, more preferably between about 3 nm and about 4 nm.
  • the unconverted plasma barrier 250 is between about 1 nm and about 5 nm, more preferably between about 1 nm and about 2 nm.
  • the unconverted plasma barrier 250 is between about 0.25 nm and about 1.75 nm.
  • the unconverted plasma barrier 250 is between about 0.125 nm and about 0.875 nm or between about 0.05 nm and about 0.35 nm.
  • a TiN plasma barrier layer was deposited as a plasma barrier layer on an Al 2 O 3 dielectric layer prior to deposition of a TiN conductive layer by PEALD.
  • a titanium nitride (TiN) barrier layer was deposited on an aluminum oxide (Al 2 O 3 ) dielectric material on a substrate by an ALD-type process.
  • the sequence of steps in the process included alternately and sequentially pulsing a metal compound (TiCl 4 ), a nitrogen source compound (NH 3 ), and a purge gas (Ar) into a reaction space containing the substrate at a reaction temperature of about 375°C.
  • the sequence of gas pulses and purges was as follows:
  • Steps (l)-(4) were repeated to form a uniform TiN barrier layer of about 5 nm.
  • a TiN conductive layer was then deposited directly on the TiN barrier layer by a plasma-enhanced ALD-type process in the same reaction chamber.
  • a metal compound (TiCl 4 ), a hydrogen-nitrogen (NH*) plasma, and a purge gas (Ar) were alternately and sequentially pulsed into a reaction space containing the substrate at a reaction temperature of about 375°C.
  • the sequence of gas pulses and purges was as follows:
  • Steps (l)-(4) were repeated to form a uniform TiN conductive layer of about 10 nm.
  • the NH* plasma converted up to 4 nm of the amorphous TiN to crystalline TiN, leaving about 1-2 nm of amorphous TiN between the Al 2 O 3 dielectric material and the crystalline TiN conductive layer.
  • a TaCN plasma barrier layer was deposited as a plasma barrier layer on an Al 2 O 3 dielectric layer by thermal ALD prior to deposition of a TaCN conductive layer by PEALD.
  • An amorphous TaCN layer was deposited as a plasma barrier layer on an amorphous aluminum oxide (Al 2 O 3 ) dielectric material on a substrate by an ALD-type process.
  • the sequence of steps in the process included alternately and sequentially pulsing a tantalum compound (TBTDET), a nitrogen source compound (NH 3 ), and a purge gas (Ar) into a reaction space containing the substrate at a reaction temperature of about 300°C, reaction pressure of about 1.5 Torr, and power of about 275 W.
  • the sequence of gas pulses and purges was as follows:
  • Steps (l)-(4) were repeated to form a uniform TaCN barrier layer of about 15 A having a resistivity of about 30 m ⁇ cm - 2 ⁇ cm with a density of about 9.5- 10.5 g/cc.
  • a TaCN conductive layer was then deposited directly on the plasma barrier layer by a plasma-enhanced ALD-type process in the same reaction chamber.
  • TBTDET, a hydrogen (H*) plasma, and a purge gas (Ar) were alternately and sequentially provided into a reaction space containing the substrate at a reaction temperature of about 375°C.
  • the sequence of gas pulses and purges was as follows:
  • Steps (l)-(4) were repeated to form a uniform TaCN conductive layer of about 10 run having a controllable resistivity of about 240 ⁇ cm - 2000 ⁇ cm with a density of about 11-12.5 g/cc and a variable lattice constant.
  • the H* converted up to 4 nm of the amorphous TaCN to crystalline TaCN, leaving about 1-2 nm of amorphous TaCN between the Al 2 O 3 dielectric material and the crystalline TiN conductive layer.
  • a TaCN plasma barrier layer was deposited as a plasma barrier layer on an Al 2 O 3 dielectric layer by thermal ALD prior to deposition of a TaC conductive layer by PEALD.
  • An amorphous TaCN layer was deposited as a plasma barrier layer on a gamma phase aluminum oxide (Al 2 O 3 ) dielectric material on a substrate by an ALD-type process.
  • the sequence of steps in the process included alternately and sequentially pulsing a tantalum compound (TBTDET), a nitrogen source compound (NH 3 ), and a purge gas (Ar) into a reaction space containing the substrate at a reaction temperature of about 300°C, reaction pressure of about 1.5 Torr, and power of about 275 W.
  • the sequence of gas pulses and purges was as follows:
  • Steps (l)-(4) were repeated about 120 cycles to form a uniform TaCN barrier layer having a resistivity of about 30 m ⁇ cm - 2 ⁇ cm with a density of about 9.5- 10.5 g/cc.
  • a TaC conductive layer was then deposited directly on the plasma barrier layer by a plasma-enhanced ALD-type process in the same reaction chamber.
  • TBTDET, a hydrogen (H*) plasma, and a purge gas (Ar) were alternately and sequentially provided into a reaction space containing the substrate at a reaction temperature of about 375°C.
  • the sequence of gas pulses and purges was as follows:
  • Steps (l)-(4) were repeated to form a uniform TaC conductive layer of about 10 nm having a controllable resistivity of about 240 ⁇ cm - 2000 ⁇ cm with a density of about 11-12.5 g/cc and a variable lattice constant.
  • the H* converted up to 4 nm of the amorphous TaCN to crystalline TaCN, leaving about 1-2 nm of amorphous TaCN between the Al 2 O 3 dielectric material and the crystalline TaCN conductive layer.

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