AU2001296529A1 - Gate electrode with depletion suppression and tunable workfunction - Google Patents
Gate electrode with depletion suppression and tunable workfunctionInfo
- Publication number
- AU2001296529A1 AU2001296529A1 AU2001296529A AU9652901A AU2001296529A1 AU 2001296529 A1 AU2001296529 A1 AU 2001296529A1 AU 2001296529 A AU2001296529 A AU 2001296529A AU 9652901 A AU9652901 A AU 9652901A AU 2001296529 A1 AU2001296529 A1 AU 2001296529A1
- Authority
- AU
- Australia
- Prior art keywords
- workfunction
- tunable
- gate electrode
- depletion suppression
- depletion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 230000001629 suppression Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/495—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo
- H01L29/4958—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo with a multiple layer structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/2807—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being Si or Ge or C and their alloys except Si
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28079—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a single metal, e.g. Ta, W, Mo, Al
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/495—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1054—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a variation of the composition, e.g. channel with strained layer for increasing the mobility
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/78654—Monocrystalline silicon transistors
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US25670800P | 2000-12-18 | 2000-12-18 | |
US60/256,708 | 2000-12-18 | ||
PCT/US2001/030926 WO2002050922A1 (en) | 2000-12-18 | 2001-10-02 | Gate electrode with depletion suppression and tunable workfunction |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001296529A1 true AU2001296529A1 (en) | 2002-07-01 |
Family
ID=22973273
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001296529A Abandoned AU2001296529A1 (en) | 2000-12-18 | 2001-10-02 | Gate electrode with depletion suppression and tunable workfunction |
Country Status (2)
Country | Link |
---|---|
AU (1) | AU2001296529A1 (en) |
WO (1) | WO2002050922A1 (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9139906B2 (en) | 2001-03-06 | 2015-09-22 | Asm America, Inc. | Doping with ALD technology |
US6858524B2 (en) | 2002-12-03 | 2005-02-22 | Asm International, Nv | Method of depositing barrier layer for metal gates |
US7045406B2 (en) | 2002-12-03 | 2006-05-16 | Asm International, N.V. | Method of forming an electrode with adjusted work function |
KR101427142B1 (en) | 2006-10-05 | 2014-08-07 | 에이에스엠 아메리카, 인코포레이티드 | ALD of metal silicate films |
US8945675B2 (en) | 2008-05-29 | 2015-02-03 | Asm International N.V. | Methods for forming conductive titanium oxide thin films |
US8557702B2 (en) | 2009-02-02 | 2013-10-15 | Asm America, Inc. | Plasma-enhanced atomic layers deposition of conductive material over dielectric layers |
US9540729B1 (en) | 2015-08-25 | 2017-01-10 | Asm Ip Holding B.V. | Deposition of titanium nanolaminates for use in integrated circuit fabrication |
US9523148B1 (en) | 2015-08-25 | 2016-12-20 | Asm Ip Holdings B.V. | Process for deposition of titanium oxynitride for use in integrated circuit fabrication |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6097070A (en) * | 1999-02-16 | 2000-08-01 | International Business Machines Corporation | MOSFET structure and process for low gate induced drain leakage (GILD) |
KR100297731B1 (en) * | 1999-06-11 | 2001-11-01 | 윤종용 | Method for fabricating a semiconduction device |
-
2001
- 2001-10-02 WO PCT/US2001/030926 patent/WO2002050922A1/en active Application Filing
- 2001-10-02 AU AU2001296529A patent/AU2001296529A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
WO2002050922A9 (en) | 2004-03-04 |
WO2002050922A1 (en) | 2002-06-27 |
WO2002050922A8 (en) | 2004-01-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
AU2002215102A1 (en) | Fet with notched gate and method of manufacturing the same | |
AU2002246664A1 (en) | Lipid-based nitric oxide donors | |
AU2001283217A1 (en) | Power mos device with asymmetrical channel structure | |
AU2001247243A1 (en) | Improved mobility spectrometer | |
HK1037061A1 (en) | Electrode material and compositions including same. | |
AU2001233042A1 (en) | Software composition using graph types, graphs, and agents | |
AU2002367931A1 (en) | Alumina-yttria-zirconium oxide/hafnium oxide materials, and methods of making and using the same | |
AU2002235128A1 (en) | Expression miniarrays and uses thereof | |
EP1058317B8 (en) | Low voltage MOS device and corresponding manufacturing process | |
AU2002227872A1 (en) | Door arrester | |
AU2001237996A1 (en) | Thermally and chemically treating cells | |
SG106585A1 (en) | Method of patterning gate electrode with ultra-thin gate dielectric | |
AU2001268014A1 (en) | Personal mobile internet | |
AU2001296529A1 (en) | Gate electrode with depletion suppression and tunable workfunction | |
AU2001292936A1 (en) | Octahydro-indolizines and quinolizines and hexahydro-pyrrolizines | |
AU2001295185A1 (en) | Multiplexing-interleaving and demultiplexing-deinterleaving | |
AU2001231166A1 (en) | Conductive gasket and material therefor | |
AU2002221353A1 (en) | Suitcase structure and suitcase incorporating same | |
AU2001279572A1 (en) | Electrode and capacitor provided with said electrode | |
AU2001225524A1 (en) | Elevating gate | |
AU2001237391A1 (en) | Insulating material for jamming between delimiting structures | |
AU3943101A (en) | Improved keypad | |
AU2001265384A1 (en) | 52906, 33408, and 12189, potassium channel family members and uses thereof | |
MXPA03001375A (en) | Insulating and sealing composition. | |
AU2001232089A1 (en) | Compound, composition and use |