AU2001283217A1 - Power mos device with asymmetrical channel structure - Google Patents
Power mos device with asymmetrical channel structureInfo
- Publication number
- AU2001283217A1 AU2001283217A1 AU2001283217A AU8321701A AU2001283217A1 AU 2001283217 A1 AU2001283217 A1 AU 2001283217A1 AU 2001283217 A AU2001283217 A AU 2001283217A AU 8321701 A AU8321701 A AU 8321701A AU 2001283217 A1 AU2001283217 A1 AU 2001283217A1
- Authority
- AU
- Australia
- Prior art keywords
- channel structure
- mos device
- power mos
- asymmetrical channel
- asymmetrical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0856—Source regions
- H01L29/086—Impurity concentration or distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US22367600P | 2000-08-08 | 2000-08-08 | |
US60/223,676 | 2000-08-08 | ||
PCT/US2001/024938 WO2002013235A2 (en) | 2000-08-08 | 2001-08-08 | Power mos device with asymmetrical channel structure |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001283217A1 true AU2001283217A1 (en) | 2002-02-18 |
Family
ID=22837554
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001283217A Abandoned AU2001283217A1 (en) | 2000-08-08 | 2001-08-08 | Power mos device with asymmetrical channel structure |
Country Status (7)
Country | Link |
---|---|
US (2) | US6503786B2 (en) |
EP (1) | EP1407476A4 (en) |
JP (1) | JP2004511084A (en) |
KR (1) | KR100858556B1 (en) |
CN (1) | CN100420031C (en) |
AU (1) | AU2001283217A1 (en) |
WO (1) | WO2002013235A2 (en) |
Families Citing this family (61)
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US6781194B2 (en) * | 2001-04-11 | 2004-08-24 | Silicon Semiconductor Corporation | Vertical power devices having retrograded-doped transition regions and insulated trench-based electrodes therein |
US6784486B2 (en) * | 2000-06-23 | 2004-08-31 | Silicon Semiconductor Corporation | Vertical power devices having retrograded-doped transition regions therein |
SE518797C2 (en) * | 2000-07-19 | 2002-11-19 | Ericsson Telefon Ab L M | Power LDMOS transistor comprising a plurality of parallel-connected transistor segments with different threshold voltages |
US7394430B2 (en) * | 2001-04-11 | 2008-07-01 | Kyocera Wireless Corp. | Wireless device reconfigurable radiation desensitivity bracket systems and methods |
US6690251B2 (en) * | 2001-04-11 | 2004-02-10 | Kyocera Wireless Corporation | Tunable ferro-electric filter |
US7746292B2 (en) * | 2001-04-11 | 2010-06-29 | Kyocera Wireless Corp. | Reconfigurable radiation desensitivity bracket systems and methods |
US7221243B2 (en) * | 2001-04-11 | 2007-05-22 | Kyocera Wireless Corp. | Apparatus and method for combining electrical signals |
US7174147B2 (en) * | 2001-04-11 | 2007-02-06 | Kyocera Wireless Corp. | Bandpass filter with tunable resonator |
EP1396030B1 (en) * | 2001-04-11 | 2011-06-29 | Silicon Semiconductor Corporation | Vertical power semiconductor device and method of making the same |
US7154440B2 (en) * | 2001-04-11 | 2006-12-26 | Kyocera Wireless Corp. | Phase array antenna using a constant-gain phase shifter |
US6812523B1 (en) * | 2001-09-21 | 2004-11-02 | Wei-Kan Chu | Semiconductor wafer with ultra thin doping level formed by defect engineering |
US7176845B2 (en) * | 2002-02-12 | 2007-02-13 | Kyocera Wireless Corp. | System and method for impedance matching an antenna to sub-bands in a communication band |
US7184727B2 (en) * | 2002-02-12 | 2007-02-27 | Kyocera Wireless Corp. | Full-duplex antenna system and method |
US7180467B2 (en) * | 2002-02-12 | 2007-02-20 | Kyocera Wireless Corp. | System and method for dual-band antenna matching |
DE10246960B4 (en) * | 2002-10-09 | 2004-08-19 | Infineon Technologies Ag | Field-effect power transistor |
US7720443B2 (en) | 2003-06-02 | 2010-05-18 | Kyocera Wireless Corp. | System and method for filtering time division multiple access telephone communications |
US7330369B2 (en) * | 2004-04-06 | 2008-02-12 | Bao Tran | NANO-electronic memory array |
US7248845B2 (en) * | 2004-07-09 | 2007-07-24 | Kyocera Wireless Corp. | Variable-loss transmitter and method of operation |
GB0416174D0 (en) * | 2004-07-20 | 2004-08-18 | Koninkl Philips Electronics Nv | Insulated gate field effect transistors |
GB0416175D0 (en) * | 2004-07-20 | 2004-08-18 | Koninkl Philips Electronics Nv | Insulated gate field effect transistors |
US7548762B2 (en) * | 2005-11-30 | 2009-06-16 | Kyocera Corporation | Method for tuning a GPS antenna matching network |
US7652519B2 (en) | 2006-06-08 | 2010-01-26 | Telefonaktiebolaget Lm Ericsson (Publ) | Apparatus and method for exploiting reverse short channel effects in transistor devices |
US7880202B2 (en) * | 2006-11-27 | 2011-02-01 | Infineon Technologies Ag | Modulated-Vt transistor |
EP2040299A1 (en) * | 2007-09-12 | 2009-03-25 | Forschungsverbund Berlin e.V. | Electrical devices having improved transfer characteristics and method for tailoring the transfer characteristics of such an electrical device |
US8067797B2 (en) * | 2007-10-17 | 2011-11-29 | International Rectifier Corporation | Variable threshold trench IGBT with offset emitter contacts |
US7888794B2 (en) | 2008-02-18 | 2011-02-15 | Infineon Technologies Ag | Semiconductor device and method |
JP5315730B2 (en) * | 2008-03-12 | 2013-10-16 | 富士通セミコンダクター株式会社 | Manufacturing method of semiconductor device |
US7884444B2 (en) * | 2008-07-22 | 2011-02-08 | Infineon Technologies Ag | Semiconductor device including a transformer on chip |
US7999332B2 (en) * | 2009-05-14 | 2011-08-16 | International Business Machines Corporation | Asymmetric semiconductor devices and method of fabricating |
US8436367B1 (en) | 2010-08-02 | 2013-05-07 | Microsemi Corporation | SiC power vertical DMOS with increased safe operating area |
US8674439B2 (en) | 2010-08-02 | 2014-03-18 | Microsemi Corporation | Low loss SiC MOSFET |
JP2012089565A (en) * | 2010-10-15 | 2012-05-10 | Honda Motor Co Ltd | Semiconductor device |
US8981460B2 (en) * | 2010-12-20 | 2015-03-17 | The Hong Kong University Of Science And Technology | Power semiconductor field effect transistor structure with charge trapping material in the gate dielectric |
US8866214B2 (en) | 2011-10-12 | 2014-10-21 | International Business Machines Corporation | Vertical transistor having an asymmetric gate |
US8298895B1 (en) | 2011-10-31 | 2012-10-30 | International Business Machines Corporation | Selective threshold voltage implants for long channel devices |
JP6182921B2 (en) | 2013-03-21 | 2017-08-23 | 富士電機株式会社 | MOS type semiconductor device |
JP2016519428A (en) * | 2013-03-21 | 2016-06-30 | マイクロセミ コーポレーション | SiC power vertical DMOS with expanded safe operating area |
US8907418B2 (en) | 2013-05-07 | 2014-12-09 | Infineon Technologies Austria Ag | Semiconductor device |
US9105470B2 (en) | 2013-05-07 | 2015-08-11 | Infineon Technologies Austria Ag | Semiconductor device |
CN103731125B (en) * | 2013-12-20 | 2016-09-07 | 北京时代民芯科技有限公司 | A kind of both-end application process of asymmetric high-pressure MOS component |
US9673103B2 (en) | 2015-06-30 | 2017-06-06 | Stmicroelectronics, Inc. | MOSFET devices with asymmetric structural configurations introducing different electrical characteristics |
US9793386B2 (en) | 2015-10-14 | 2017-10-17 | Ford Global Technologies, Llc | Multiple zone power semiconductor device |
DE102016114135A1 (en) * | 2016-07-29 | 2018-02-01 | Phoenix Contact Gmbh & Co. Kg | Method for signaling the position of a safety device and safety switching system |
US10224426B2 (en) * | 2016-12-02 | 2019-03-05 | Vishay-Siliconix | High-electron-mobility transistor devices |
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DE102017114568B4 (en) | 2017-06-29 | 2021-11-25 | Infineon Technologies Austria Ag | POWER SEMICONDUCTOR DEVICE WITH DIFFERENT GATE CROSSINGS AND METHOD OF MANUFACTURING THEREOF |
US10833063B2 (en) | 2018-07-25 | 2020-11-10 | Vishay SIliconix, LLC | High electron mobility transistor ESD protection structures |
CN109540286A (en) * | 2018-10-18 | 2019-03-29 | 天津大学 | A kind of field effect transistor terahertz wave detector based on asymmetric channels |
US10784850B2 (en) | 2018-12-11 | 2020-09-22 | Semiconductor Components Industries, Llc | Power transistor device and method of controlling the same |
US10998403B2 (en) * | 2019-03-04 | 2021-05-04 | Infineon Technologies Americas Corp. | Device with increased forward biased safe operating area (FBSOA) through using source segments having different threshold voltages |
US10784373B1 (en) | 2019-03-14 | 2020-09-22 | Semiconductor Components Industries, Llc | Insulated gated field effect transistor structure having shielded source and method |
DE102019008556A1 (en) | 2019-03-14 | 2020-09-17 | Semiconductor Components Industries, Llc | Insulated gate field effect transistor structure with shielded source and process |
US11257916B2 (en) | 2019-03-14 | 2022-02-22 | Semiconductor Components Industries, Llc | Electronic device having multi-thickness gate insulator |
US11217666B2 (en) * | 2019-09-17 | 2022-01-04 | Infineon Technologies Americas Corp. | Method of increasing forward biased safe operating area using different threshold voltage segments |
CN113110691B (en) * | 2020-02-17 | 2023-07-21 | 台湾积体电路制造股份有限公司 | Voltage reference circuit and method for providing reference voltage |
EP4120357A1 (en) | 2021-07-16 | 2023-01-18 | Hitachi Energy Switzerland AG | Power semiconductor device |
EP4120362A1 (en) | 2021-07-16 | 2023-01-18 | Hitachi Energy Switzerland AG | Power semiconductor device |
EP4120360A1 (en) | 2021-07-16 | 2023-01-18 | Hitachi Energy Switzerland AG | Power semiconductor device |
US11888060B2 (en) | 2021-09-01 | 2024-01-30 | Semiconductor Components Industries, Llc | Power MOSFET with improved safe operating area |
CN117174758B (en) * | 2023-11-03 | 2024-02-23 | 陕西亚成微电子股份有限公司 | SGT MOSFET device and preparation method |
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JPS5842269A (en) | 1981-09-05 | 1983-03-11 | Nippon Telegr & Teleph Corp <Ntt> | Mis-type variable resistor |
JPS6035573A (en) * | 1983-08-08 | 1985-02-23 | Hitachi Ltd | Manufacture of semiconductor device |
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JP3149773B2 (en) * | 1996-03-18 | 2001-03-26 | 富士電機株式会社 | Insulated gate bipolar transistor with current limiting circuit |
JP3209091B2 (en) * | 1996-05-30 | 2001-09-17 | 富士電機株式会社 | Semiconductor device having insulated gate bipolar transistor |
DE69637746D1 (en) * | 1996-09-06 | 2008-12-24 | Mitsubishi Electric Corp | TRANSISTOR AND METHOD OF MANUFACTURING |
DE19811297B4 (en) * | 1997-03-17 | 2009-03-19 | Fuji Electric Co., Ltd., Kawasaki | High breakdown voltage MOS semiconductor device |
DE19808348C1 (en) * | 1998-02-27 | 1999-06-24 | Siemens Ag | Semiconductor component, such as field-effect power semiconductor device |
JP2000077663A (en) * | 1998-09-02 | 2000-03-14 | Mitsubishi Electric Corp | Field-effect semiconductor device |
US6137139A (en) * | 1999-06-03 | 2000-10-24 | Intersil Corporation | Low voltage dual-well MOS device having high ruggedness, low on-resistance, and improved body diode reverse recovery |
SE518797C2 (en) | 2000-07-19 | 2002-11-19 | Ericsson Telefon Ab L M | Power LDMOS transistor comprising a plurality of parallel-connected transistor segments with different threshold voltages |
-
2001
- 2001-08-08 EP EP01961999A patent/EP1407476A4/en not_active Withdrawn
- 2001-08-08 JP JP2002518501A patent/JP2004511084A/en active Pending
- 2001-08-08 US US09/925,289 patent/US6503786B2/en not_active Expired - Lifetime
- 2001-08-08 AU AU2001283217A patent/AU2001283217A1/en not_active Abandoned
- 2001-08-08 WO PCT/US2001/024938 patent/WO2002013235A2/en active Application Filing
- 2001-08-08 CN CNB01817020XA patent/CN100420031C/en not_active Expired - Lifetime
- 2001-08-08 KR KR1020027018070A patent/KR100858556B1/en not_active IP Right Cessation
-
2002
- 2002-10-09 US US10/268,274 patent/US6664594B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP1407476A2 (en) | 2004-04-14 |
JP2004511084A (en) | 2004-04-08 |
WO2002013235A3 (en) | 2004-01-08 |
CN100420031C (en) | 2008-09-17 |
US6664594B2 (en) | 2003-12-16 |
WO2002013235A2 (en) | 2002-02-14 |
US20020020873A1 (en) | 2002-02-21 |
EP1407476A4 (en) | 2007-08-29 |
US6503786B2 (en) | 2003-01-07 |
US20030034522A1 (en) | 2003-02-20 |
KR20030028497A (en) | 2003-04-08 |
CN1496586A (en) | 2004-05-12 |
KR100858556B1 (en) | 2008-09-16 |
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