AU2001238287A1 - Dmos transistor structure having improved performance - Google Patents
Dmos transistor structure having improved performanceInfo
- Publication number
- AU2001238287A1 AU2001238287A1 AU2001238287A AU3828701A AU2001238287A1 AU 2001238287 A1 AU2001238287 A1 AU 2001238287A1 AU 2001238287 A AU2001238287 A AU 2001238287A AU 3828701 A AU3828701 A AU 3828701A AU 2001238287 A1 AU2001238287 A1 AU 2001238287A1
- Authority
- AU
- Australia
- Prior art keywords
- improved performance
- transistor structure
- dmos transistor
- dmos
- performance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0626—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a localised breakdown region, e.g. built-in avalanching region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0856—Source regions
- H01L29/0865—Disposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09515335 | 2000-02-29 | ||
US09/515,335 US6548860B1 (en) | 2000-02-29 | 2000-02-29 | DMOS transistor structure having improved performance |
PCT/US2001/004796 WO2001065607A2 (en) | 2000-02-29 | 2001-02-15 | Trench gate dmos field-effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001238287A1 true AU2001238287A1 (en) | 2001-09-12 |
Family
ID=24050918
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001238287A Abandoned AU2001238287A1 (en) | 2000-02-29 | 2001-02-15 | Dmos transistor structure having improved performance |
Country Status (8)
Country | Link |
---|---|
US (1) | US6548860B1 (en) |
EP (2) | EP2267786A3 (en) |
JP (1) | JP2003529209A (en) |
KR (1) | KR20020079919A (en) |
CN (1) | CN1279620C (en) |
AU (1) | AU2001238287A1 (en) |
TW (1) | TW493280B (en) |
WO (1) | WO2001065607A2 (en) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10127885B4 (en) * | 2001-06-08 | 2009-09-24 | Infineon Technologies Ag | Trench power semiconductor device |
US6838722B2 (en) * | 2002-03-22 | 2005-01-04 | Siliconix Incorporated | Structures of and methods of fabricating trench-gated MIS devices |
US8629019B2 (en) * | 2002-09-24 | 2014-01-14 | Vishay-Siliconix | Method of forming self aligned contacts for a power MOSFET |
US7494876B1 (en) | 2005-04-21 | 2009-02-24 | Vishay Siliconix | Trench-gated MIS device having thick polysilicon insulation layer at trench bottom and method of fabricating the same |
US7583485B1 (en) | 2005-07-26 | 2009-09-01 | Vishay-Siliconix | Electrostatic discharge protection circuit for integrated circuits |
US7544545B2 (en) * | 2005-12-28 | 2009-06-09 | Vishay-Siliconix | Trench polysilicon diode |
WO2007084688A1 (en) * | 2006-01-18 | 2007-07-26 | Vishay-Siliconix | Floating gate structure with high electrostatic discharge performance |
DE102006029750B4 (en) * | 2006-06-28 | 2010-12-02 | Infineon Technologies Austria Ag | Trench transistor and method of manufacture |
US20080206944A1 (en) * | 2007-02-23 | 2008-08-28 | Pan-Jit International Inc. | Method for fabricating trench DMOS transistors and schottky elements |
US10600902B2 (en) | 2008-02-13 | 2020-03-24 | Vishay SIliconix, LLC | Self-repairing field effect transisitor |
US9230810B2 (en) | 2009-09-03 | 2016-01-05 | Vishay-Siliconix | System and method for substrate wafer back side and edge cross section seals |
US9425305B2 (en) | 2009-10-20 | 2016-08-23 | Vishay-Siliconix | Structures of and methods of fabricating split gate MIS devices |
US9419129B2 (en) | 2009-10-21 | 2016-08-16 | Vishay-Siliconix | Split gate semiconductor device with curved gate oxide profile |
US9577089B2 (en) | 2010-03-02 | 2017-02-21 | Vishay-Siliconix | Structures and methods of fabricating dual gate devices |
CN103688363B (en) | 2011-05-18 | 2017-08-04 | 威世硅尼克斯公司 | Semiconductor devices |
JP6524279B2 (en) * | 2011-08-24 | 2019-06-05 | ローム株式会社 | Semiconductor device and method of manufacturing the same |
JP6290526B2 (en) | 2011-08-24 | 2018-03-07 | ローム株式会社 | Semiconductor device and manufacturing method thereof |
JP6219140B2 (en) * | 2013-11-22 | 2017-10-25 | ルネサスエレクトロニクス株式会社 | Semiconductor device |
EP3183753A4 (en) | 2014-08-19 | 2018-01-10 | Vishay-Siliconix | Electronic circuit |
US11217541B2 (en) | 2019-05-08 | 2022-01-04 | Vishay-Siliconix, LLC | Transistors with electrically active chip seal ring and methods of manufacture |
US11218144B2 (en) | 2019-09-12 | 2022-01-04 | Vishay-Siliconix, LLC | Semiconductor device with multiple independent gates |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58100460A (en) | 1981-12-11 | 1983-06-15 | Hitachi Ltd | Vertical type metal oxide semiconductor device |
US5072266A (en) | 1988-12-27 | 1991-12-10 | Siliconix Incorporated | Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry |
JPH0354868A (en) | 1989-07-21 | 1991-03-08 | Fuji Electric Co Ltd | Mos type semiconductor device |
JP3170966B2 (en) * | 1993-08-25 | 2001-05-28 | 富士電機株式会社 | Insulated gate control semiconductor device and manufacturing method thereof |
JPH0878668A (en) * | 1994-08-31 | 1996-03-22 | Toshiba Corp | Semiconductor device for power |
US5688725A (en) * | 1994-12-30 | 1997-11-18 | Siliconix Incorporated | Method of making a trench mosfet with heavily doped delta layer to provide low on-resistance |
US5998837A (en) * | 1995-06-02 | 1999-12-07 | Siliconix Incorporated | Trench-gated power MOSFET with protective diode having adjustable breakdown voltage |
US5763915A (en) | 1996-02-27 | 1998-06-09 | Magemos Corporation | DMOS transistors having trenched gate oxide |
JP3257394B2 (en) * | 1996-04-04 | 2002-02-18 | 株式会社日立製作所 | Voltage driven semiconductor device |
US5998266A (en) | 1996-12-19 | 1999-12-07 | Magepower Semiconductor Corp. | Method of forming a semiconductor structure having laterally merged body layer |
US5986304A (en) | 1997-01-13 | 1999-11-16 | Megamos Corporation | Punch-through prevention in trenched DMOS with poly-silicon layer covering trench corners |
-
2000
- 2000-02-29 US US09/515,335 patent/US6548860B1/en not_active Expired - Lifetime
-
2001
- 2001-02-15 JP JP2001564397A patent/JP2003529209A/en active Pending
- 2001-02-15 EP EP10012843A patent/EP2267786A3/en not_active Withdrawn
- 2001-02-15 KR KR1020027011229A patent/KR20020079919A/en not_active Application Discontinuation
- 2001-02-15 CN CNB018058078A patent/CN1279620C/en not_active Expired - Fee Related
- 2001-02-15 EP EP01910706A patent/EP1266406B1/en not_active Expired - Lifetime
- 2001-02-15 WO PCT/US2001/004796 patent/WO2001065607A2/en active Application Filing
- 2001-02-15 AU AU2001238287A patent/AU2001238287A1/en not_active Abandoned
- 2001-02-20 TW TW090103825A patent/TW493280B/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CN1416597A (en) | 2003-05-07 |
WO2001065607A2 (en) | 2001-09-07 |
EP1266406B1 (en) | 2011-11-30 |
EP2267786A3 (en) | 2011-01-12 |
CN1279620C (en) | 2006-10-11 |
TW493280B (en) | 2002-07-01 |
KR20020079919A (en) | 2002-10-19 |
WO2001065607A3 (en) | 2002-05-30 |
JP2003529209A (en) | 2003-09-30 |
EP1266406A2 (en) | 2002-12-18 |
EP2267786A2 (en) | 2010-12-29 |
US6548860B1 (en) | 2003-04-15 |
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