AU7478400A - Trench dmos transistor having improved trench structure - Google Patents

Trench dmos transistor having improved trench structure

Info

Publication number
AU7478400A
AU7478400A AU74784/00A AU7478400A AU7478400A AU 7478400 A AU7478400 A AU 7478400A AU 74784/00 A AU74784/00 A AU 74784/00A AU 7478400 A AU7478400 A AU 7478400A AU 7478400 A AU7478400 A AU 7478400A
Authority
AU
Australia
Prior art keywords
trench
improved
dmos transistor
trench structure
trench dmos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU74784/00A
Inventor
Fwu-Iuan Hshieh
Koon Chong So
Yan Man Tsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Semiconductor Inc
Original Assignee
General Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Semiconductor Inc filed Critical General Semiconductor Inc
Publication of AU7478400A publication Critical patent/AU7478400A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
AU74784/00A 1999-09-14 2000-09-11 Trench dmos transistor having improved trench structure Abandoned AU7478400A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US39583299A 1999-09-14 1999-09-14
US09395832 1999-09-14
PCT/US2000/024876 WO2001020684A1 (en) 1999-09-14 2000-09-11 Trench dmos transistor having improved trench structure

Publications (1)

Publication Number Publication Date
AU7478400A true AU7478400A (en) 2001-04-17

Family

ID=23564716

Family Applications (1)

Application Number Title Priority Date Filing Date
AU74784/00A Abandoned AU7478400A (en) 1999-09-14 2000-09-11 Trench dmos transistor having improved trench structure

Country Status (2)

Country Link
AU (1) AU7478400A (en)
WO (1) WO2001020684A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7183610B2 (en) * 2004-04-30 2007-02-27 Siliconix Incorporated Super trench MOSFET including buried source electrode and method of fabricating the same
US20060163650A1 (en) * 2005-01-27 2006-07-27 Ling Ma Power semiconductor device with endless gate trenches
US7524726B2 (en) 2005-08-17 2009-04-28 International Rectifier Corporation Method for fabricating a semiconductor device
US7943990B2 (en) 2005-08-17 2011-05-17 International Rectifier Corporation Power semiconductor device with interconnected gate trenches
US11404567B2 (en) 2018-07-23 2022-08-02 Stmicroelectronics S.R.L. Trench-gate field effect transistor with improved electrical performances and corresponding manufacturing process

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58176974A (en) * 1982-04-09 1983-10-17 Fujitsu Ltd Preparation of semiconductor device
KR920020763A (en) * 1991-04-19 1992-11-21 김광호 Semiconductor device and manufacturing method
US5430324A (en) * 1992-07-23 1995-07-04 Siliconix, Incorporated High voltage transistor having edge termination utilizing trench technology
JP3167457B2 (en) * 1992-10-22 2001-05-21 株式会社東芝 Semiconductor device
JP3396553B2 (en) * 1994-02-04 2003-04-14 三菱電機株式会社 Semiconductor device manufacturing method and semiconductor device
JP3521628B2 (en) * 1995-09-29 2004-04-19 株式会社デンソー Semiconductor device

Also Published As

Publication number Publication date
WO2001020684A1 (en) 2001-03-22

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase