AU2001266977A1 - Trench mosfet with double-diffused body profile - Google Patents

Trench mosfet with double-diffused body profile

Info

Publication number
AU2001266977A1
AU2001266977A1 AU2001266977A AU6697701A AU2001266977A1 AU 2001266977 A1 AU2001266977 A1 AU 2001266977A1 AU 2001266977 A AU2001266977 A AU 2001266977A AU 6697701 A AU6697701 A AU 6697701A AU 2001266977 A1 AU2001266977 A1 AU 2001266977A1
Authority
AU
Australia
Prior art keywords
double
trench mosfet
body profile
diffused body
diffused
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001266977A
Inventor
Fwu-Iuan Hshieh
Koon Chong So
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Semiconductor Inc
Original Assignee
General Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Semiconductor Inc filed Critical General Semiconductor Inc
Publication of AU2001266977A1 publication Critical patent/AU2001266977A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
AU2001266977A 2000-06-16 2001-06-14 Trench mosfet with double-diffused body profile Abandoned AU2001266977A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/595,486 US6472678B1 (en) 2000-06-16 2000-06-16 Trench MOSFET with double-diffused body profile
US09595486 2000-06-16
PCT/US2001/019363 WO2001099177A2 (en) 2000-06-16 2001-06-14 Trench mosfet with double-diffused body profile

Publications (1)

Publication Number Publication Date
AU2001266977A1 true AU2001266977A1 (en) 2002-01-02

Family

ID=24383432

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001266977A Abandoned AU2001266977A1 (en) 2000-06-16 2001-06-14 Trench mosfet with double-diffused body profile

Country Status (9)

Country Link
US (2) US6472678B1 (en)
EP (1) EP1292990B1 (en)
JP (1) JP2003536274A (en)
KR (1) KR100759937B1 (en)
CN (1) CN1220273C (en)
AU (1) AU2001266977A1 (en)
DE (1) DE60139936D1 (en)
TW (1) TW493239B (en)
WO (1) WO2001099177A2 (en)

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US6803626B2 (en) 2002-07-18 2004-10-12 Fairchild Semiconductor Corporation Vertical charge control semiconductor device
US6818513B2 (en) 2001-01-30 2004-11-16 Fairchild Semiconductor Corporation Method of forming a field effect transistor having a lateral depletion structure
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US6576516B1 (en) * 2001-12-31 2003-06-10 General Semiconductor, Inc. High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching and diffusion from regions of oppositely doped polysilicon
US8080459B2 (en) 2002-09-24 2011-12-20 Vishay-Siliconix Self aligned contact in a semiconductor device and method of fabricating the same
US8629019B2 (en) 2002-09-24 2014-01-14 Vishay-Siliconix Method of forming self aligned contacts for a power MOSFET
US6921699B2 (en) * 2002-09-30 2005-07-26 International Rectifier Corporation Method for manufacturing a semiconductor device with a trench termination
US7576388B1 (en) 2002-10-03 2009-08-18 Fairchild Semiconductor Corporation Trench-gate LDMOS structures
US6710418B1 (en) 2002-10-11 2004-03-23 Fairchild Semiconductor Corporation Schottky rectifier with insulation-filled trenches and method of forming the same
US7652326B2 (en) 2003-05-20 2010-01-26 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
KR100994719B1 (en) 2003-11-28 2010-11-16 페어차일드코리아반도체 주식회사 Superjunction semiconductor device
US7368777B2 (en) 2003-12-30 2008-05-06 Fairchild Semiconductor Corporation Accumulation device with charge balance structure and method of forming the same
JP4829473B2 (en) * 2004-01-21 2011-12-07 オンセミコンダクター・トレーディング・リミテッド Insulated gate semiconductor device and manufacturing method thereof
US7352036B2 (en) 2004-08-03 2008-04-01 Fairchild Semiconductor Corporation Semiconductor power device having a top-side drain using a sinker trench
KR100582374B1 (en) * 2004-09-08 2006-05-22 매그나칩 반도체 유한회사 High voltage transistor and method for fabricating the same
JP4913336B2 (en) * 2004-09-28 2012-04-11 ルネサスエレクトロニクス株式会社 Semiconductor device
AT504998A2 (en) 2005-04-06 2008-09-15 Fairchild Semiconductor TRENCHED-GATE FIELD EFFECT TRANSISTORS AND METHOD FOR MAKING THE SAME
US20070004116A1 (en) * 2005-06-06 2007-01-04 M-Mos Semiconductor Sdn. Bhd. Trenched MOSFET termination with tungsten plug structures
KR101296984B1 (en) 2005-06-10 2013-08-14 페어차일드 세미컨덕터 코포레이션 Charge balance field effect transistor
US7544545B2 (en) 2005-12-28 2009-06-09 Vishay-Siliconix Trench polysilicon diode
US7446374B2 (en) 2006-03-24 2008-11-04 Fairchild Semiconductor Corporation High density trench FET with integrated Schottky diode and method of manufacture
US7319256B1 (en) 2006-06-19 2008-01-15 Fairchild Semiconductor Corporation Shielded gate trench FET with the shield and gate electrodes being connected together
JP5198752B2 (en) * 2006-09-28 2013-05-15 ルネサスエレクトロニクス株式会社 Manufacturing method of semiconductor device
US9437729B2 (en) 2007-01-08 2016-09-06 Vishay-Siliconix High-density power MOSFET with planarized metalization
JP2008218711A (en) * 2007-03-05 2008-09-18 Renesas Technology Corp Semiconductor device, its manufacturing method, and power supply device
US9947770B2 (en) 2007-04-03 2018-04-17 Vishay-Siliconix Self-aligned trench MOSFET and method of manufacture
EP2208229A4 (en) 2007-09-21 2011-03-16 Fairchild Semiconductor Superjunction structures for power devices and methods of manufacture
WO2009060406A1 (en) * 2007-11-08 2009-05-14 Nxp B.V. A trench-gate semiconductor device and method of manufacturing the same
EP2209142B1 (en) * 2007-11-09 2020-05-27 Sanken Electric Co., Ltd. Semiconductor device and manufacturing method thereof
US7772668B2 (en) * 2007-12-26 2010-08-10 Fairchild Semiconductor Corporation Shielded gate trench FET with multiple channels
US10600902B2 (en) 2008-02-13 2020-03-24 Vishay SIliconix, LLC Self-repairing field effect transisitor
US20120273916A1 (en) 2011-04-27 2012-11-01 Yedinak Joseph A Superjunction Structures for Power Devices and Methods of Manufacture
US7911260B2 (en) * 2009-02-02 2011-03-22 Infineon Technologies Ag Current control circuits
US9425306B2 (en) 2009-08-27 2016-08-23 Vishay-Siliconix Super junction trench power MOSFET devices
US9443974B2 (en) 2009-08-27 2016-09-13 Vishay-Siliconix Super junction trench power MOSFET device fabrication
US9230810B2 (en) 2009-09-03 2016-01-05 Vishay-Siliconix System and method for substrate wafer back side and edge cross section seals
TWI405326B (en) * 2009-10-14 2013-08-11 Anpec Electronics Corp Bilateral conduction semiconductor device and manufacturing method thereof
US9431530B2 (en) 2009-10-20 2016-08-30 Vishay-Siliconix Super-high density trench MOSFET
JP4791572B2 (en) * 2009-12-21 2011-10-12 ルネサスエレクトロニクス株式会社 Semiconductor device
US8319290B2 (en) 2010-06-18 2012-11-27 Fairchild Semiconductor Corporation Trench MOS barrier schottky rectifier with a planar surface using CMP techniques
JP2010283368A (en) * 2010-07-26 2010-12-16 Renesas Electronics Corp Method of manufacturing semiconductor device
US8487371B2 (en) 2011-03-29 2013-07-16 Fairchild Semiconductor Corporation Vertical MOSFET transistor having source/drain contacts disposed on the same side and method for manufacturing the same
US8673700B2 (en) 2011-04-27 2014-03-18 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8786010B2 (en) 2011-04-27 2014-07-22 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8836028B2 (en) 2011-04-27 2014-09-16 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8772868B2 (en) 2011-04-27 2014-07-08 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
JP2013065749A (en) * 2011-09-20 2013-04-11 Toshiba Corp Semiconductor device
US8872278B2 (en) 2011-10-25 2014-10-28 Fairchild Semiconductor Corporation Integrated gate runner and field implant termination for trench devices
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US9318549B2 (en) * 2013-02-18 2016-04-19 Infineon Technologies Austria Ag Semiconductor device with a super junction structure having a vertical impurity distribution
US9887259B2 (en) 2014-06-23 2018-02-06 Vishay-Siliconix Modulated super junction power MOSFET devices
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US9673314B2 (en) * 2015-07-08 2017-06-06 Vishay-Siliconix Semiconductor device with non-uniform trench oxide layer
CN117594658A (en) * 2023-11-16 2024-02-23 深圳芯能半导体技术有限公司 Groove type field effect transistor and preparation method thereof

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Also Published As

Publication number Publication date
TW493239B (en) 2002-07-01
KR100759937B1 (en) 2007-09-19
WO2001099177A2 (en) 2001-12-27
WO2001099177A3 (en) 2002-03-28
DE60139936D1 (en) 2009-10-29
CN1220273C (en) 2005-09-21
EP1292990B1 (en) 2009-09-16
US6518128B2 (en) 2003-02-11
JP2003536274A (en) 2003-12-02
EP1292990A2 (en) 2003-03-19
US6472678B1 (en) 2002-10-29
US20020009854A1 (en) 2002-01-24
KR20030062236A (en) 2003-07-23
CN1436371A (en) 2003-08-13

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