JPS58176974A - Preparation of semiconductor device - Google Patents

Preparation of semiconductor device

Info

Publication number
JPS58176974A
JPS58176974A JP5989682A JP5989682A JPS58176974A JP S58176974 A JPS58176974 A JP S58176974A JP 5989682 A JP5989682 A JP 5989682A JP 5989682 A JP5989682 A JP 5989682A JP S58176974 A JPS58176974 A JP S58176974A
Authority
JP
Japan
Prior art keywords
film
polycrystalline silicon
level
formed
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5989682A
Inventor
Shinpei Tanaka
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP5989682A priority Critical patent/JPS58176974A/en
Publication of JPS58176974A publication Critical patent/JPS58176974A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate

Abstract

PURPOSE:To obtain a MOS semiconductor element having stabilized gate dielectric strength by forming two-level or three-level silicon gate electrodes with different deposition methods. CONSTITUTION:A gate insulating film 2 consisting of a SiO2 film on a field insulating film 4 deposited over a semiconductor substrate 1, a polycrystalline silicon film 5 is deposited thereon by the vacuum deposition method, and moreover a polycrystalline silicon film is deposited thereon by the CVD method. Thereafter, such film is patterned by the photo processing and a gate electrode and gate insulating film 2 consisting of two-level polycrystalline silicon films 5, 6 are formed by the dry etching method. In succession, source and drain are formed by well known method and a MOS semiconductor element can be obtained. When such two-level polycrystalline silicon film is formed, since a polycrystalline silicon film 5 formed as the under layer is deposited, a gate dielectric strength is not deteriorated, and since the uppermost polycrystalline silicon film 6 is deposited by the CVD method, invasion of chemical solution is rejected through a dense film and thereby a gate insulating film can be kept stable.
JP5989682A 1982-04-09 1982-04-09 Preparation of semiconductor device Pending JPS58176974A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5989682A JPS58176974A (en) 1982-04-09 1982-04-09 Preparation of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5989682A JPS58176974A (en) 1982-04-09 1982-04-09 Preparation of semiconductor device

Publications (1)

Publication Number Publication Date
JPS58176974A true JPS58176974A (en) 1983-10-17

Family

ID=13126332

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5989682A Pending JPS58176974A (en) 1982-04-09 1982-04-09 Preparation of semiconductor device

Country Status (1)

Country Link
JP (1) JPS58176974A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0452720A2 (en) * 1990-04-02 1991-10-23 National Semiconductor Corporation A semiconductor structure and method of its manufacture
JPH07200089A (en) * 1993-12-28 1995-08-04 Konami Kk Joy stick
WO2001020684A1 (en) * 1999-09-14 2001-03-22 General Semiconductor, Inc. Trench dmos transistor having improved trench structure
US6781196B2 (en) 2002-03-11 2004-08-24 General Semiconductor, Inc. Trench DMOS transistor having improved trench structure

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0452720A2 (en) * 1990-04-02 1991-10-23 National Semiconductor Corporation A semiconductor structure and method of its manufacture
EP0452720A3 (en) * 1990-04-02 1994-10-26 Nat Semiconductor Corp A semiconductor structure and method of its manufacture
JPH07200089A (en) * 1993-12-28 1995-08-04 Konami Kk Joy stick
WO2001020684A1 (en) * 1999-09-14 2001-03-22 General Semiconductor, Inc. Trench dmos transistor having improved trench structure
US6781196B2 (en) 2002-03-11 2004-08-24 General Semiconductor, Inc. Trench DMOS transistor having improved trench structure

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