AU2001285335A1 - Trench mosfet with structure having low gate charge - Google Patents

Trench mosfet with structure having low gate charge

Info

Publication number
AU2001285335A1
AU2001285335A1 AU2001285335A AU8533501A AU2001285335A1 AU 2001285335 A1 AU2001285335 A1 AU 2001285335A1 AU 2001285335 A AU2001285335 A AU 2001285335A AU 8533501 A AU8533501 A AU 8533501A AU 2001285335 A1 AU2001285335 A1 AU 2001285335A1
Authority
AU
Australia
Prior art keywords
trench mosfet
gate charge
low gate
charge
mosfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001285335A
Inventor
Fwu-Iuan Hshieh
Koon Chong So
Yan Man Tsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Semiconductor Inc
Original Assignee
General Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Semiconductor Inc filed Critical General Semiconductor Inc
Publication of AU2001285335A1 publication Critical patent/AU2001285335A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/907—Folded bit line dram configuration
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/908—Dram configuration with transistors and capacitors of pairs of cells along a straight line between adjacent bit lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
AU2001285335A 2000-08-31 2001-08-29 Trench mosfet with structure having low gate charge Abandoned AU2001285335A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/653,619 2000-08-31
US09/653,619 US6472708B1 (en) 2000-08-31 2000-08-31 Trench MOSFET with structure having low gate charge
PCT/US2001/026819 WO2002019432A2 (en) 2000-08-31 2001-08-29 Trench mosfet with structure having low gate charge

Publications (1)

Publication Number Publication Date
AU2001285335A1 true AU2001285335A1 (en) 2002-03-13

Family

ID=24621628

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001285335A Abandoned AU2001285335A1 (en) 2000-08-31 2001-08-29 Trench mosfet with structure having low gate charge

Country Status (9)

Country Link
US (2) US6472708B1 (en)
EP (1) EP1314203B1 (en)
JP (1) JP4060706B2 (en)
KR (1) KR100759939B1 (en)
CN (1) CN100477255C (en)
AU (1) AU2001285335A1 (en)
DE (1) DE60125784T2 (en)
TW (1) TW502446B (en)
WO (1) WO2002019432A2 (en)

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US7745289B2 (en) 2000-08-16 2010-06-29 Fairchild Semiconductor Corporation Method of forming a FET having ultra-low on-resistance and low gate charge
US6803626B2 (en) 2002-07-18 2004-10-12 Fairchild Semiconductor Corporation Vertical charge control semiconductor device
US6818513B2 (en) 2001-01-30 2004-11-16 Fairchild Semiconductor Corporation Method of forming a field effect transistor having a lateral depletion structure
US6916745B2 (en) 2003-05-20 2005-07-12 Fairchild Semiconductor Corporation Structure and method for forming a trench MOSFET having self-aligned features
GB0122122D0 (en) * 2001-09-13 2001-10-31 Koninkl Philips Electronics Nv Trench-gate semiconductor devices and their manufacture
US6576516B1 (en) * 2001-12-31 2003-06-10 General Semiconductor, Inc. High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching and diffusion from regions of oppositely doped polysilicon
US7576388B1 (en) 2002-10-03 2009-08-18 Fairchild Semiconductor Corporation Trench-gate LDMOS structures
US6710418B1 (en) 2002-10-11 2004-03-23 Fairchild Semiconductor Corporation Schottky rectifier with insulation-filled trenches and method of forming the same
US7652326B2 (en) 2003-05-20 2010-01-26 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
US7235842B2 (en) 2003-07-12 2007-06-26 Nxp B.V. Insulated gate power semiconductor devices
JP2005101334A (en) * 2003-09-25 2005-04-14 Sanyo Electric Co Ltd Semiconductor device and its manufacturing method
KR100994719B1 (en) 2003-11-28 2010-11-16 페어차일드코리아반도체 주식회사 Superjunction semiconductor device
US7368777B2 (en) 2003-12-30 2008-05-06 Fairchild Semiconductor Corporation Accumulation device with charge balance structure and method of forming the same
US7352036B2 (en) 2004-08-03 2008-04-01 Fairchild Semiconductor Corporation Semiconductor power device having a top-side drain using a sinker trench
KR100582374B1 (en) * 2004-09-08 2006-05-22 매그나칩 반도체 유한회사 High voltage transistor and method for fabricating the same
US20060113588A1 (en) * 2004-11-29 2006-06-01 Sillicon-Based Technology Corp. Self-aligned trench-type DMOS transistor structure and its manufacturing methods
CN101882583A (en) 2005-04-06 2010-11-10 飞兆半导体公司 Trenched-gate field effect transistors and forming method thereof
KR101296984B1 (en) 2005-06-10 2013-08-14 페어차일드 세미컨덕터 코포레이션 Charge balance field effect transistor
US8883595B2 (en) 2006-02-23 2014-11-11 Vishay-Siliconix Process for forming a short channel trench MOSFET and device formed thereby
US7446374B2 (en) 2006-03-24 2008-11-04 Fairchild Semiconductor Corporation High density trench FET with integrated Schottky diode and method of manufacture
US7319256B1 (en) 2006-06-19 2008-01-15 Fairchild Semiconductor Corporation Shielded gate trench FET with the shield and gate electrodes being connected together
CN101868856B (en) 2007-09-21 2014-03-12 飞兆半导体公司 Superjunction structures for power devices and methods of manufacture
US7772668B2 (en) 2007-12-26 2010-08-10 Fairchild Semiconductor Corporation Shielded gate trench FET with multiple channels
US20120273916A1 (en) 2011-04-27 2012-11-01 Yedinak Joseph A Superjunction Structures for Power Devices and Methods of Manufacture
JP5006378B2 (en) 2009-08-11 2012-08-22 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド Semiconductor device and manufacturing method thereof
US8987818B1 (en) 2009-11-13 2015-03-24 Maxim Integrated Products, Inc. Integrated MOS power transistor with thin gate oxide and low gate charge
US8946851B1 (en) 2009-11-13 2015-02-03 Maxim Integrated Products, Inc. Integrated MOS power transistor with thin gate oxide and low gate charge
US20110115019A1 (en) * 2009-11-13 2011-05-19 Maxim Integrated Products, Inc. Cmos compatible low gate charge lateral mosfet
US8969958B1 (en) 2009-11-13 2015-03-03 Maxim Integrated Products, Inc. Integrated MOS power transistor with body extension region for poly field plate depletion assist
US20110115018A1 (en) * 2009-11-13 2011-05-19 Maxim Integrated Products, Inc. Mos power transistor
US8963241B1 (en) 2009-11-13 2015-02-24 Maxim Integrated Products, Inc. Integrated MOS power transistor with poly field plate extension for depletion assist
US8349653B2 (en) 2010-06-02 2013-01-08 Maxim Integrated Products, Inc. Use of device assembly for a generalization of three-dimensional metal interconnect technologies
US10672748B1 (en) 2010-06-02 2020-06-02 Maxim Integrated Products, Inc. Use of device assembly for a generalization of three-dimensional heterogeneous technologies integration
US8432000B2 (en) 2010-06-18 2013-04-30 Fairchild Semiconductor Corporation Trench MOS barrier schottky rectifier with a planar surface using CMP techniques
US8772868B2 (en) 2011-04-27 2014-07-08 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8836028B2 (en) 2011-04-27 2014-09-16 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8673700B2 (en) 2011-04-27 2014-03-18 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8786010B2 (en) 2011-04-27 2014-07-22 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
WO2014021199A1 (en) * 2012-08-01 2014-02-06 三菱電機株式会社 Silicon-carbide semiconductor device and method for manufacturing same
JP2014056890A (en) * 2012-09-11 2014-03-27 Toshiba Corp Semiconductor device and method of manufacturing the same
CN104322102A (en) * 2013-03-08 2015-01-28 华为技术有限公司 Wireless transmission method for service data, apparatus and device thereof
JP6271155B2 (en) * 2013-05-21 2018-01-31 株式会社東芝 Semiconductor device
TWI488309B (en) * 2013-05-31 2015-06-11 碩頡科技股份有限公司 Trench gate mosfet and method of forming the same
CN103346167A (en) * 2013-06-24 2013-10-09 成都瑞芯电子有限公司 Columnsyn metal-oxygen-semiconductor field-effect transistor capable of effectively reducing grid resistance and grid capacitance and manufacturing method thereof
CN111384168A (en) * 2018-12-27 2020-07-07 无锡华润华晶微电子有限公司 Trench MOSFET and method for manufacturing trench MOSFET

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US5072266A (en) 1988-12-27 1991-12-10 Siliconix Incorporated Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry
US5410170A (en) 1993-04-14 1995-04-25 Siliconix Incorporated DMOS power transistors with reduced number of contacts using integrated body-source connections
JP3400846B2 (en) 1994-01-20 2003-04-28 三菱電機株式会社 Semiconductor device having trench structure and method of manufacturing the same
US5597765A (en) * 1995-01-10 1997-01-28 Siliconix Incorporated Method for making termination structure for power MOSFET
US5616945A (en) * 1995-10-13 1997-04-01 Siliconix Incorporated Multiple gated MOSFET for use in DC-DC converter
KR100218260B1 (en) * 1997-01-14 1999-09-01 김덕중 Trench type mos transistor fabricating method
US5907776A (en) * 1997-07-11 1999-05-25 Magepower Semiconductor Corp. Method of forming a semiconductor structure having reduced threshold voltage and high punch-through tolerance
US6461918B1 (en) * 1999-12-20 2002-10-08 Fairchild Semiconductor Corporation Power MOS device with improved gate charge performance

Also Published As

Publication number Publication date
EP1314203B1 (en) 2007-01-03
US6713352B2 (en) 2004-03-30
DE60125784T2 (en) 2007-10-18
US20030011028A1 (en) 2003-01-16
DE60125784D1 (en) 2007-02-15
CN1528020A (en) 2004-09-08
KR20030029151A (en) 2003-04-11
WO2002019432A2 (en) 2002-03-07
CN100477255C (en) 2009-04-08
JP2004521479A (en) 2004-07-15
WO2002019432A3 (en) 2003-03-06
TW502446B (en) 2002-09-11
EP1314203A2 (en) 2003-05-28
JP4060706B2 (en) 2008-03-12
US6472708B1 (en) 2002-10-29
KR100759939B1 (en) 2007-09-21

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