AU2001227701A1 - Drive transistor with folded gate - Google Patents

Drive transistor with folded gate

Info

Publication number
AU2001227701A1
AU2001227701A1 AU2001227701A AU2770101A AU2001227701A1 AU 2001227701 A1 AU2001227701 A1 AU 2001227701A1 AU 2001227701 A AU2001227701 A AU 2001227701A AU 2770101 A AU2770101 A AU 2770101A AU 2001227701 A1 AU2001227701 A1 AU 2001227701A1
Authority
AU
Australia
Prior art keywords
drive transistor
folded gate
folded
gate
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001227701A
Inventor
Bruce D Gibson
George K. Parish
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lexmark International Inc
Original Assignee
Lexmark International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lexmark International Inc filed Critical Lexmark International Inc
Publication of AU2001227701A1 publication Critical patent/AU2001227701A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/14—Structure thereof only for on-demand ink jet heads
    • B41J2/14016—Structure of bubble jet print heads
    • B41J2/14072—Electrical connections, e.g. details on electrodes, connecting the chip to the outside...
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
AU2001227701A 2000-01-14 2001-01-08 Drive transistor with folded gate Abandoned AU2001227701A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09484119 2000-01-14
US09/484,119 US6274896B1 (en) 2000-01-14 2000-01-14 Drive transistor with fold gate
PCT/US2001/000499 WO2001052314A1 (en) 2000-01-14 2001-01-08 Drive transistor with folded gate

Publications (1)

Publication Number Publication Date
AU2001227701A1 true AU2001227701A1 (en) 2001-07-24

Family

ID=23922818

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001227701A Abandoned AU2001227701A1 (en) 2000-01-14 2001-01-08 Drive transistor with folded gate

Country Status (3)

Country Link
US (1) US6274896B1 (en)
AU (1) AU2001227701A1 (en)
WO (1) WO2001052314A1 (en)

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US6501136B1 (en) * 1997-09-16 2002-12-31 Winbond Electronics Corporation High-speed MOSFET structure for ESD protection
US6552396B1 (en) * 2000-03-14 2003-04-22 International Business Machines Corporation Matched transistors and methods for forming the same
US6541820B1 (en) * 2000-03-28 2003-04-01 International Rectifier Corporation Low voltage planar power MOSFET with serpentine gate pattern
WO2003094242A1 (en) * 2002-04-29 2003-11-13 Koninklijke Philips Electronics N.V. Esd-robust power switch and method of using same
US6642578B1 (en) 2002-07-22 2003-11-04 Anadigics, Inc. Linearity radio frequency switch with low control voltage
US7170118B2 (en) * 2003-08-01 2007-01-30 Taiwan Semiconductor Manufacturing Co., Ltd. Field effect transistor (FET) device having corrugated structure and method for fabrication thereof
TW200618283A (en) * 2004-06-24 2006-06-01 Koninkl Philips Electronics Nv High frequency transistor layout for low source drain capacitance
GB0500115D0 (en) 2005-01-06 2005-02-09 Koninkl Philips Electronics Nv Thin film transistor array devices
DE102005047104B3 (en) * 2005-09-30 2007-05-31 Infineon Technologies Ag Semiconductor device with interconnected cell strips
DE102006050087A1 (en) * 2006-10-24 2008-04-30 Austriamicrosystems Ag Semiconductor body for use in diode and transistor such as FET and bi-polar transistor, has connecting line for contacting semiconductor region, where conductivity per unit of length of connecting line changes from value to another value
GB0709706D0 (en) * 2007-05-21 2007-06-27 Filtronic Compound Semiconduct A field effect transistor
DE102007046556A1 (en) * 2007-09-28 2009-04-02 Infineon Technologies Austria Ag Semiconductor device with copper metallizations
JP5106041B2 (en) * 2007-10-26 2012-12-26 株式会社東芝 Semiconductor device
JP4847995B2 (en) * 2008-10-17 2011-12-28 株式会社沖データ Drive circuit, optical print head, and image forming apparatus
TW201209997A (en) * 2010-08-16 2012-03-01 Fortune Semiconductor Corp Layout of power MOSFET
JP2013110269A (en) * 2011-11-21 2013-06-06 Samsung Electro-Mechanics Co Ltd Cmos integrated circuit and amplifier circuit
JP6338832B2 (en) 2013-07-31 2018-06-06 ルネサスエレクトロニクス株式会社 Semiconductor device
US10128365B2 (en) 2016-03-17 2018-11-13 Cree, Inc. Bypassed gate transistors having improved stability
US10763334B2 (en) 2018-07-11 2020-09-01 Cree, Inc. Drain and/or gate interconnect and finger structure
US10483352B1 (en) 2018-07-11 2019-11-19 Cree, Inc. High power transistor with interior-fed gate fingers
US10600746B2 (en) 2018-07-19 2020-03-24 Cree, Inc. Radio frequency transistor amplifiers and other multi-cell transistors having gaps and/or isolation structures between groups of unit cell transistors
US10770415B2 (en) 2018-12-04 2020-09-08 Cree, Inc. Packaged transistor devices with input-output isolation and methods of forming packaged transistor devices with input-output isolation
US11417746B2 (en) 2019-04-24 2022-08-16 Wolfspeed, Inc. High power transistor with interior-fed fingers
CN114141868B (en) * 2022-02-07 2022-04-12 深圳市时代速信科技有限公司 Semiconductor device and preparation method thereof

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Publication number Priority date Publication date Assignee Title
US3414781A (en) 1965-01-22 1968-12-03 Hughes Aircraft Co Field effect transistor having interdigitated source and drain and overlying, insulated gate
US3967305A (en) 1969-03-27 1976-06-29 Mcdonnell Douglas Corporation Multichannel junction field-effect transistor and process
US4142197A (en) 1977-04-14 1979-02-27 Rca Corp. Drain extensions for closed COS/MOS logic devices
US4462041A (en) 1981-03-20 1984-07-24 Harris Corporation High speed and current gain insulated gate field effect transistors
US4583111A (en) 1983-09-09 1986-04-15 Fairchild Semiconductor Corporation Integrated circuit chip wiring arrangement providing reduced circuit inductance and controlled voltage gradients
US4590327A (en) 1984-09-24 1986-05-20 Energy Conversion Devices, Inc. Photovoltaic device and method
US4725747A (en) * 1986-08-29 1988-02-16 Texas Instruments Incorporated Integrated circuit distributed geometry to reduce switching noise
US5142346A (en) 1987-04-03 1992-08-25 Texas Instruments Incorporated Floating gate JFET image sensor
US4994891A (en) 1989-06-20 1991-02-19 Advanced Micro Devices Shielded transistor device
USH842H (en) 1989-06-30 1990-11-06 American Telephone And Telegraph Company Metal conductor structure having low electro-migration at high currents for semiconductor devices
KR940008009Y1 (en) * 1991-12-24 1994-11-16 금성일렉트론 주식회사 Variable operating speed transistor
US5258638A (en) 1992-08-13 1993-11-02 Xerox Corporation Thermal ink jet power MOS device design/layout
US5412239A (en) 1993-05-14 1995-05-02 Siliconix Incorporated Contact geometry for improved lateral MOSFET
KR100206555B1 (en) 1995-12-30 1999-07-01 윤종용 Power transistor
JPH10154816A (en) * 1996-11-21 1998-06-09 Semiconductor Energy Lab Co Ltd Semiconductor device
US5955763A (en) * 1997-09-16 1999-09-21 Winbond Electronics Corp. Low noise, high current-drive MOSFET structure for uniform serpentine-shaped poly-gate turn-on during an ESD event
US6002156A (en) * 1997-09-16 1999-12-14 Winbond Electronics Corp. Distributed MOSFET structure with enclosed gate for improved transistor size/layout area ratio and uniform ESD triggering
US6102528A (en) * 1997-10-17 2000-08-15 Xerox Corporation Drive transistor for an ink jet printhead
US6031270A (en) * 1998-02-18 2000-02-29 Vlsi Technology, Inc. Methods of protecting a semiconductor device

Also Published As

Publication number Publication date
US6274896B1 (en) 2001-08-14
WO2001052314A1 (en) 2001-07-19

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