AU2001291097A1 - Trench dmos transistor having lightly doped source structure - Google Patents

Trench dmos transistor having lightly doped source structure

Info

Publication number
AU2001291097A1
AU2001291097A1 AU2001291097A AU9109701A AU2001291097A1 AU 2001291097 A1 AU2001291097 A1 AU 2001291097A1 AU 2001291097 A AU2001291097 A AU 2001291097A AU 9109701 A AU9109701 A AU 9109701A AU 2001291097 A1 AU2001291097 A1 AU 2001291097A1
Authority
AU
Australia
Prior art keywords
lightly doped
doped source
source structure
dmos transistor
trench dmos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001291097A
Inventor
Fwu-Luan Hshieh
Koon Chong So
Yan Man Tsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Semiconductor Inc
Original Assignee
General Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Semiconductor Inc filed Critical General Semiconductor Inc
Publication of AU2001291097A1 publication Critical patent/AU2001291097A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H01L29/0856—Source regions
    • H01L29/086—Impurity concentration or distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
AU2001291097A 2000-09-28 2001-09-19 Trench dmos transistor having lightly doped source structure Abandoned AU2001291097A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/672,209 US6445037B1 (en) 2000-09-28 2000-09-28 Trench DMOS transistor having lightly doped source structure
US09672209 2000-09-28
PCT/US2001/029230 WO2002027800A2 (en) 2000-09-28 2001-09-19 Trench dmos transistor having lightly doped source structure

Publications (1)

Publication Number Publication Date
AU2001291097A1 true AU2001291097A1 (en) 2002-04-08

Family

ID=24697599

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001291097A Abandoned AU2001291097A1 (en) 2000-09-28 2001-09-19 Trench dmos transistor having lightly doped source structure

Country Status (9)

Country Link
US (1) US6445037B1 (en)
EP (1) EP1320895B1 (en)
JP (1) JP4094945B2 (en)
KR (1) KR100642803B1 (en)
CN (1) CN1552101B (en)
AU (1) AU2001291097A1 (en)
DE (1) DE60127696T2 (en)
TW (1) TW506021B (en)
WO (1) WO2002027800A2 (en)

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EP1261036A3 (en) * 2001-05-25 2004-07-28 Kabushiki Kaisha Toshiba Power MOSFET semiconductor device and method of manufacturing the same
DE10129958B4 (en) * 2001-06-21 2006-07-13 Infineon Technologies Ag Memory cell arrangement and manufacturing method
US6958275B2 (en) * 2003-03-11 2005-10-25 Integrated Discrete Devices, Llc MOSFET power transistors and methods
EP1708276A4 (en) * 2003-12-22 2008-04-16 Matsushita Electric Ind Co Ltd Vertical gate semiconductor device and process for fabricating the same
US7372088B2 (en) 2004-01-27 2008-05-13 Matsushita Electric Industrial Co., Ltd. Vertical gate semiconductor device and method for fabricating the same
JP4091921B2 (en) 2004-02-16 2008-05-28 松下電器産業株式会社 Semiconductor device and manufacturing method thereof
JP4955222B2 (en) 2005-05-20 2012-06-20 ルネサスエレクトロニクス株式会社 Manufacturing method of semiconductor device
US7282406B2 (en) * 2006-03-06 2007-10-16 Semiconductor Companents Industries, L.L.C. Method of forming an MOS transistor and structure therefor
WO2007127607A1 (en) * 2006-04-25 2007-11-08 Koninklijke Philips Electronics, N.V. Implementation of avalanche photo diodes in (bi) cmos processes
JP2008042166A (en) * 2006-07-12 2008-02-21 Matsushita Electric Ind Co Ltd Vertical gate semiconductor device and method for manufacturing the same
JP5128100B2 (en) * 2006-09-29 2013-01-23 三菱電機株式会社 Power semiconductor device
JP5369464B2 (en) * 2008-03-24 2013-12-18 富士電機株式会社 Silicon carbide MOS type semiconductor device
JP4877286B2 (en) * 2008-07-08 2012-02-15 株式会社デンソー Silicon carbide semiconductor device and manufacturing method thereof
JP5732790B2 (en) * 2010-09-14 2015-06-10 株式会社デンソー Silicon carbide semiconductor device and manufacturing method thereof
CN102623316A (en) * 2011-01-27 2012-08-01 无锡华润上华半导体有限公司 Methods for preparing groove bottom auxiliary gate dielectric layer and groove DMOS pipe
KR20150076840A (en) * 2013-12-27 2015-07-07 현대자동차주식회사 Semiconductor device and method manufacturing the same
KR20150078449A (en) * 2013-12-30 2015-07-08 현대자동차주식회사 Semiconductor device and method manufacturing the same
US9419116B2 (en) 2014-01-22 2016-08-16 Alexei Ankoudinov Diodes and methods of manufacturing diodes
US9252293B2 (en) 2014-01-22 2016-02-02 Alexei Ankoudinov Trench field effect diodes and methods of manufacturing those diodes
KR101655153B1 (en) * 2014-12-12 2016-09-22 현대자동차 주식회사 Semiconductor device and method manufacturing the same
CN115117054A (en) * 2016-01-20 2022-09-27 罗姆股份有限公司 Semiconductor device with a plurality of semiconductor chips
JP6740986B2 (en) * 2017-08-31 2020-08-19 株式会社デンソー Silicon carbide semiconductor device and manufacturing method thereof
CN115377221A (en) * 2022-09-14 2022-11-22 华羿微电子股份有限公司 MOSFET device with strong impact resistance and preparation method thereof

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US5072266A (en) 1988-12-27 1991-12-10 Siliconix Incorporated Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry
JPH03195064A (en) * 1989-12-25 1991-08-26 Nippon Telegr & Teleph Corp <Ntt> Mos field effect transistor
US5023196A (en) * 1990-01-29 1991-06-11 Motorola Inc. Method for forming a MOSFET with substrate source contact
US5134448A (en) 1990-01-29 1992-07-28 Motorola, Inc. MOSFET with substrate source contact
US5410170A (en) 1993-04-14 1995-04-25 Siliconix Incorporated DMOS power transistors with reduced number of contacts using integrated body-source connections
GB9313843D0 (en) * 1993-07-05 1993-08-18 Philips Electronics Uk Ltd A semiconductor device comprising an insulated gate field effect transistor
JPH07122749A (en) 1993-09-01 1995-05-12 Toshiba Corp Semiconductor device and its manufacture
JP3400846B2 (en) 1994-01-20 2003-04-28 三菱電機株式会社 Semiconductor device having trench structure and method of manufacturing the same
EP0726603B1 (en) 1995-02-10 1999-04-21 SILICONIX Incorporated Trenched field effect transistor with PN depletion barrier
US5672889A (en) * 1995-03-15 1997-09-30 General Electric Company Vertical channel silicon carbide metal-oxide-semiconductor field effect transistor with self-aligned gate for microwave and power applications, and method of making
JP3528420B2 (en) 1996-04-26 2004-05-17 株式会社デンソー Semiconductor device and manufacturing method thereof
DE19638439C2 (en) * 1996-09-19 2000-06-15 Siemens Ag Vertical semiconductor device controllable by field effect and manufacturing process
JP3164030B2 (en) * 1997-09-19 2001-05-08 日本電気株式会社 Manufacturing method of vertical field effect transistor
JP3281847B2 (en) * 1997-09-26 2002-05-13 三洋電機株式会社 Method for manufacturing semiconductor device
US6262453B1 (en) * 1998-04-24 2001-07-17 Magepower Semiconductor Corp. Double gate-oxide for reducing gate-drain capacitance in trenched DMOS with high-dopant concentration buried-region under trenched gate
US5972754A (en) * 1998-06-10 1999-10-26 Mosel Vitelic, Inc. Method for fabricating MOSFET having increased effective gate length
US6351009B1 (en) * 1999-03-01 2002-02-26 Fairchild Semiconductor Corporation MOS-gated device having a buried gate and process for forming same
GB9916868D0 (en) * 1999-07-20 1999-09-22 Koninkl Philips Electronics Nv Trench-gate field-effect transistors and their manufacture
JP2001332725A (en) * 2000-03-15 2001-11-30 Seiko Instruments Inc Semiconductor device and its manufacturing method
JP3910335B2 (en) * 2000-03-22 2007-04-25 セイコーインスツル株式会社 Vertical MOS transistor and manufacturing method thereof

Also Published As

Publication number Publication date
WO2002027800A3 (en) 2002-06-13
CN1552101A (en) 2004-12-01
EP1320895A2 (en) 2003-06-25
KR20030033083A (en) 2003-04-26
DE60127696D1 (en) 2007-05-16
EP1320895B1 (en) 2007-04-04
KR100642803B1 (en) 2006-11-03
TW506021B (en) 2002-10-11
US6445037B1 (en) 2002-09-03
CN1552101B (en) 2010-06-16
DE60127696T2 (en) 2007-12-27
WO2002027800A2 (en) 2002-04-04
JP4094945B2 (en) 2008-06-04
JP2004525500A (en) 2004-08-19

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