HK1043433A1 - Self-aligned electron source device - Google Patents

Self-aligned electron source device

Info

Publication number
HK1043433A1
HK1043433A1 HK02105161.0A HK02105161A HK1043433A1 HK 1043433 A1 HK1043433 A1 HK 1043433A1 HK 02105161 A HK02105161 A HK 02105161A HK 1043433 A1 HK1043433 A1 HK 1043433A1
Authority
HK
Hong Kong
Prior art keywords
self
source device
electron source
aligned electron
aligned
Prior art date
Application number
HK02105161.0A
Other languages
Chinese (zh)
Inventor
Lam Si-Ty
Birecki Henryk
Kuo Huei-Pei
L Naberhuis Steven
Original Assignee
惠普公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 惠普公司 filed Critical 惠普公司
Publication of HK1043433A1 publication Critical patent/HK1043433A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
    • H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
HK02105161.0A 2000-07-17 2002-07-11 Self-aligned electron source device HK1043433A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US61787600A 2000-07-17 2000-07-17

Publications (1)

Publication Number Publication Date
HK1043433A1 true HK1043433A1 (en) 2002-09-13

Family

ID=24475402

Family Applications (1)

Application Number Title Priority Date Filing Date
HK02105161.0A HK1043433A1 (en) 2000-07-17 2002-07-11 Self-aligned electron source device

Country Status (4)

Country Link
EP (1) EP1174899A3 (en)
JP (1) JP2002083555A (en)
CN (1) CN1334582A (en)
HK (1) HK1043433A1 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2836279B1 (en) * 2002-02-19 2004-09-24 Commissariat Energie Atomique CATHODE STRUCTURE FOR EMISSIVE SCREEN
US6670628B2 (en) * 2002-04-04 2003-12-30 Hewlett-Packard Company, L.P. Low heat loss and small contact area composite electrode for a phase change media memory device
SE526069C2 (en) * 2003-01-14 2005-06-28 Nilsson Materials Ab Electronic data storage system
KR20060011668A (en) * 2004-07-30 2006-02-03 삼성에스디아이 주식회사 Electron emission device and method for manufacturing the same
KR20060019846A (en) * 2004-08-30 2006-03-06 삼성에스디아이 주식회사 Electron emission device
KR20060095318A (en) * 2005-02-28 2006-08-31 삼성에스디아이 주식회사 Electron emission device and method for manufacturing the same
JP5723730B2 (en) * 2011-09-05 2015-05-27 株式会社日立ハイテクノロジーズ Emitter, gas field ion source, and ion beam device
CN104934275B (en) * 2015-05-18 2018-01-09 北京大学 Field Electron Emission cathode array based on metal molybdenum substrate and preparation method thereof
CN106691457B (en) * 2016-12-30 2022-08-02 胡振强 Fingerprint developing device
CN117174549A (en) * 2022-05-26 2023-12-05 华为技术有限公司 Electronic source chip, preparation method thereof and electronic equipment

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2719239B2 (en) * 1991-02-08 1998-02-25 工業技術院長 Field emission device
DE4325708C1 (en) * 1993-07-30 1994-06-16 Siemens Ag Prodn. of electrically conducting point made of doped silicon@ - by forming mask with opening on substrate and producing doped silicon@ paint on exposed surface of substrate
US5564959A (en) * 1993-09-08 1996-10-15 Silicon Video Corporation Use of charged-particle tracks in fabricating gated electron-emitting devices
FR2719156B1 (en) * 1994-04-25 1996-05-24 Commissariat Energie Atomique Source of microtip electrons, microtips having two parts.
US5702281A (en) * 1995-04-20 1997-12-30 Industrial Technology Research Institute Fabrication of two-part emitter for gated field emission device
AU5727496A (en) * 1995-05-08 1996-11-29 Advanced Vision Technologies, Inc. Field emission display cell structure and fabrication proces s
KR100201553B1 (en) * 1995-09-25 1999-06-15 하제준 Field emitter array with integrated mosfet and manufacturing method thereof
US5869169A (en) * 1996-09-27 1999-02-09 Fed Corporation Multilayer emitter element and display comprising same
US6465941B1 (en) * 1998-12-07 2002-10-15 Sony Corporation Cold cathode field emission device and display

Also Published As

Publication number Publication date
EP1174899A3 (en) 2002-09-18
JP2002083555A (en) 2002-03-22
EP1174899A2 (en) 2002-01-23
CN1334582A (en) 2002-02-06

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