EP1174899A3 - Electron source device - Google Patents

Electron source device Download PDF

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Publication number
EP1174899A3
EP1174899A3 EP01306009A EP01306009A EP1174899A3 EP 1174899 A3 EP1174899 A3 EP 1174899A3 EP 01306009 A EP01306009 A EP 01306009A EP 01306009 A EP01306009 A EP 01306009A EP 1174899 A3 EP1174899 A3 EP 1174899A3
Authority
EP
European Patent Office
Prior art keywords
dielectric layers
emitter
cavity
silicon
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP01306009A
Other languages
German (de)
French (fr)
Other versions
EP1174899A2 (en
Inventor
Si-Ty Lam
Henryk Birecki
Huei-Pei Kuo
Steven L. Naberhuis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of EP1174899A2 publication Critical patent/EP1174899A2/en
Publication of EP1174899A3 publication Critical patent/EP1174899A3/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
    • H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type

Abstract

A self-aligned electron device (10) includes emitter (13), extraction electrode (17), and focus electrode (21) separated by dielectric layers, (11, 15, 19). A single cavity (23) extending through the electrodes and the dielectric layers and terminating at the emitter electrode (13) is formed by a single photolithography step and an etching process. A composite emitter (1) including a base (3) disposed on the emitter electrode (13) and a conical tip (5) disposed on the base (3) and terminating at a vertex V is formed in the cavity (23). The base (3) can be made from materials including titanium, chromium, or doped silicon. The tip (5) can be made from a wide variety of materials including a refractory metal, a metal alloy, a silicon alloy, a carbide, a nitride, or an electroformable metal. The cavity (23) and the composite emitter (1) are self-aligned relative to each other. The dielectric layers can be etched back to reduce or eliminate charge accumulation on cavity-facing portions (43, 45) of the dielectric layers. A composite layer including a dielectric and mechanical strength enhancement layer (15a, 19a) of silicon nitride or silicon carbide and a pull-back layer (15b, 19b) of silicon oxide on top of the etch stop layer can be used to form the dielectric layers.
EP01306009A 2000-07-17 2001-07-12 Electron source device Withdrawn EP1174899A3 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US61787600A 2000-07-17 2000-07-17
US617876 2000-07-17

Publications (2)

Publication Number Publication Date
EP1174899A2 EP1174899A2 (en) 2002-01-23
EP1174899A3 true EP1174899A3 (en) 2002-09-18

Family

ID=24475402

Family Applications (1)

Application Number Title Priority Date Filing Date
EP01306009A Withdrawn EP1174899A3 (en) 2000-07-17 2001-07-12 Electron source device

Country Status (4)

Country Link
EP (1) EP1174899A3 (en)
JP (1) JP2002083555A (en)
CN (1) CN1334582A (en)
HK (1) HK1043433A1 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2836279B1 (en) * 2002-02-19 2004-09-24 Commissariat Energie Atomique CATHODE STRUCTURE FOR EMISSIVE SCREEN
US6670628B2 (en) * 2002-04-04 2003-12-30 Hewlett-Packard Company, L.P. Low heat loss and small contact area composite electrode for a phase change media memory device
SE526069C2 (en) * 2003-01-14 2005-06-28 Nilsson Materials Ab Electronic data storage system
KR20060011668A (en) * 2004-07-30 2006-02-03 삼성에스디아이 주식회사 Electron emission device and method for manufacturing the same
KR20060019846A (en) * 2004-08-30 2006-03-06 삼성에스디아이 주식회사 Electron emission device
KR20060095318A (en) * 2005-02-28 2006-08-31 삼성에스디아이 주식회사 Electron emission device and method for manufacturing the same
JP5723730B2 (en) * 2011-09-05 2015-05-27 株式会社日立ハイテクノロジーズ Emitter, gas field ion source, and ion beam device
CN104934275B (en) * 2015-05-18 2018-01-09 北京大学 Field Electron Emission cathode array based on metal molybdenum substrate and preparation method thereof
CN106691457B (en) * 2016-12-30 2022-08-02 胡振强 Fingerprint developing device
CN117174549A (en) * 2022-05-26 2023-12-05 华为技术有限公司 Electronic source chip, preparation method thereof and electronic equipment

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5469014A (en) * 1991-02-08 1995-11-21 Futaba Denshi Kogyo Kk Field emission element
US5516404A (en) * 1993-07-30 1996-05-14 Siemens Aktiengesellschaft Method for manufacturing a micro-electronic component having an electrically conductive tip of doped silicon
WO1996036061A1 (en) * 1995-05-08 1996-11-14 Advanced Vision Technologies, Inc. Field emission display cell structure and fabrication process
US5702281A (en) * 1995-04-20 1997-12-30 Industrial Technology Research Institute Fabrication of two-part emitter for gated field emission device
US5731597A (en) * 1995-09-25 1998-03-24 Korea Information & Communication Co., Ltd. Field emitter array incorporated with metal oxide semiconductor field effect transistors and method for fabricating the same
EP0856868A2 (en) * 1994-04-25 1998-08-05 Commissariat A L'energie Atomique Method of manufacturing a field emission electron source and field emission deviced manufactured by said process
US5869169A (en) * 1996-09-27 1999-02-09 Fed Corporation Multilayer emitter element and display comprising same
EP0945885A1 (en) * 1993-09-08 1999-09-29 Silicon Video Corporation Fabrication and structure of electron-emitting devices having high emitter packing density
EP1011123A2 (en) * 1998-12-07 2000-06-21 Sony Corporation Cold cathode field emission device, process for the production thereof, and cold cathode field emission display

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5469014A (en) * 1991-02-08 1995-11-21 Futaba Denshi Kogyo Kk Field emission element
US5516404A (en) * 1993-07-30 1996-05-14 Siemens Aktiengesellschaft Method for manufacturing a micro-electronic component having an electrically conductive tip of doped silicon
EP0945885A1 (en) * 1993-09-08 1999-09-29 Silicon Video Corporation Fabrication and structure of electron-emitting devices having high emitter packing density
EP0856868A2 (en) * 1994-04-25 1998-08-05 Commissariat A L'energie Atomique Method of manufacturing a field emission electron source and field emission deviced manufactured by said process
US5702281A (en) * 1995-04-20 1997-12-30 Industrial Technology Research Institute Fabrication of two-part emitter for gated field emission device
WO1996036061A1 (en) * 1995-05-08 1996-11-14 Advanced Vision Technologies, Inc. Field emission display cell structure and fabrication process
US5731597A (en) * 1995-09-25 1998-03-24 Korea Information & Communication Co., Ltd. Field emitter array incorporated with metal oxide semiconductor field effect transistors and method for fabricating the same
US5869169A (en) * 1996-09-27 1999-02-09 Fed Corporation Multilayer emitter element and display comprising same
EP1011123A2 (en) * 1998-12-07 2000-06-21 Sony Corporation Cold cathode field emission device, process for the production thereof, and cold cathode field emission display

Also Published As

Publication number Publication date
JP2002083555A (en) 2002-03-22
HK1043433A1 (en) 2002-09-13
CN1334582A (en) 2002-02-06
EP1174899A2 (en) 2002-01-23

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