AU2002215102A1 - Fet with notched gate and method of manufacturing the same - Google Patents

Fet with notched gate and method of manufacturing the same

Info

Publication number
AU2002215102A1
AU2002215102A1 AU2002215102A AU1510202A AU2002215102A1 AU 2002215102 A1 AU2002215102 A1 AU 2002215102A1 AU 2002215102 A AU2002215102 A AU 2002215102A AU 1510202 A AU1510202 A AU 1510202A AU 2002215102 A1 AU2002215102 A1 AU 2002215102A1
Authority
AU
Australia
Prior art keywords
fet
manufacturing
same
notched gate
notched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002215102A
Inventor
Mark Hakey
Steven Holmes
David Horak
Edward Nowak
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of AU2002215102A1 publication Critical patent/AU2002215102A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/2807—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being Si or Ge or C and their alloys except Si
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28114—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor characterised by the sectional shape, e.g. T, inverted-T
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28123—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
    • H01L29/1045—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface the doping structure being parallel to the channel length, e.g. DMOS like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4983—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material
    • H01L29/4991—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material comprising an air gap
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
AU2002215102A 2000-11-15 2001-11-13 Fet with notched gate and method of manufacturing the same Abandoned AU2002215102A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/713,830 US6891235B1 (en) 2000-11-15 2000-11-15 FET with T-shaped gate
US09713830 2000-11-15
PCT/GB2001/005015 WO2002041383A1 (en) 2000-11-15 2001-11-13 Fet with notched gate and method of manufacturing the same

Publications (1)

Publication Number Publication Date
AU2002215102A1 true AU2002215102A1 (en) 2002-05-27

Family

ID=24867706

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002215102A Abandoned AU2002215102A1 (en) 2000-11-15 2001-11-13 Fet with notched gate and method of manufacturing the same

Country Status (9)

Country Link
US (2) US6891235B1 (en)
EP (1) EP1334512A1 (en)
JP (1) JP4391745B2 (en)
KR (1) KR100550751B1 (en)
CN (1) CN1276487C (en)
AU (1) AU2002215102A1 (en)
IL (2) IL146269A0 (en)
TW (1) TW522563B (en)
WO (1) WO2002041383A1 (en)

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10114778A1 (en) * 2001-03-26 2002-10-17 Infineon Technologies Ag Method of manufacturing a MOSFET with a very small channel length
KR100398874B1 (en) * 2001-11-21 2003-09-19 삼성전자주식회사 MOS Transistor With T-Shaped Gate Electrode And Method Of Fabricating The Same
US7151292B1 (en) * 2003-01-15 2006-12-19 Spansion Llc Dielectric memory cell structure with counter doped channel region
US6905976B2 (en) 2003-05-06 2005-06-14 International Business Machines Corporation Structure and method of forming a notched gate field effect transistor
KR20050011092A (en) * 2003-07-21 2005-01-29 매그나칩 반도체 유한회사 Method for manufacturing t-shaped transistor gate
US7501669B2 (en) 2003-09-09 2009-03-10 Cree, Inc. Wide bandgap transistor devices with field plates
DE60330965D1 (en) 2003-10-17 2010-03-04 Imec A method of manufacturing a semiconductor substrate having a layered structure of activated dopants
CN1295755C (en) * 2003-10-27 2007-01-17 上海宏力半导体制造有限公司 Method for forming grooved grid structure
US6885072B1 (en) * 2003-11-18 2005-04-26 Applied Intellectual Properties Co., Ltd. Nonvolatile memory with undercut trapping structure
US6852584B1 (en) * 2004-01-14 2005-02-08 Tokyo Electron Limited Method of trimming a gate electrode structure
US20050199872A1 (en) * 2004-03-10 2005-09-15 Tokyo Electron Limited Of Tbs Broadcast Center Silicon-germanium thin layer semiconductor structure with variable silicon-germanium composition and method of fabrication
US7105430B2 (en) * 2004-03-26 2006-09-12 Freescale Semiconductor, Inc. Method for forming a semiconductor device having a notched control electrode and structure thereof
US7573078B2 (en) * 2004-05-11 2009-08-11 Cree, Inc. Wide bandgap transistors with multiple field plates
US7550783B2 (en) * 2004-05-11 2009-06-23 Cree, Inc. Wide bandgap HEMTs with source connected field plates
US9773877B2 (en) * 2004-05-13 2017-09-26 Cree, Inc. Wide bandgap field effect transistors with source connected field plates
JP2006086467A (en) * 2004-09-17 2006-03-30 Toshiba Corp Semiconductor device and method of manufacturing the same
US11791385B2 (en) 2005-03-11 2023-10-17 Wolfspeed, Inc. Wide bandgap transistors with gate-source field plates
JP2007042802A (en) * 2005-08-02 2007-02-15 Toshiba Corp Mosfet and its manufacturing method
US7776725B2 (en) * 2005-09-12 2010-08-17 International Business Machines Corporation Anti-halo compensation
US7456058B1 (en) * 2005-09-21 2008-11-25 Advanced Micro Devices, Inc. Stressed MOS device and methods for its fabrication
US7344933B2 (en) * 2006-01-03 2008-03-18 Freescale Semiconductor, Inc. Method of forming device having a raised extension region
EP1921669B1 (en) 2006-11-13 2015-09-02 Cree, Inc. GaN based HEMTs with buried field plates
JP2009021439A (en) * 2007-07-12 2009-01-29 Mitsubishi Electric Corp Semiconductor device, and manufacturing method thereof
KR101263648B1 (en) * 2007-08-31 2013-05-21 삼성전자주식회사 Fin field effect transistor and method of manufacturing the same
US7883976B2 (en) * 2007-12-13 2011-02-08 International Business Machines Corporation Structure and method for manufacturing device with planar halo profile
US7666746B2 (en) * 2008-01-14 2010-02-23 International Business Machines Corporation Semiconductor transistors having high-K gate dielectric layers, metal gate electrode regions, and low fringing capacitances
US20090212332A1 (en) * 2008-02-21 2009-08-27 International Business Machines Corporation Field effect transistor with reduced overlap capacitance
WO2010023608A2 (en) * 2008-08-25 2010-03-04 Nxp B.V. Low cost mos transistor for rf applications
TWI383505B (en) * 2008-11-28 2013-01-21 Chunghwa Picture Tubes Ltd Thin film transistor and fabricating method thereof
US8168538B2 (en) * 2009-05-26 2012-05-01 Macronix International Co., Ltd. Buried silicide structure and method for making
US8164146B2 (en) * 2009-09-23 2012-04-24 Macronix International Co., Ltd. Substrate symmetrical silicide source/drain surrounding gate transistor
US9048254B2 (en) 2009-12-02 2015-06-02 United Microelectronics Corp. Semiconductor structure having a metal gate with side wall spacers
US8847232B2 (en) * 2011-01-07 2014-09-30 Eastman Kodak Company Transistor including reduced channel length
JP2013105891A (en) * 2011-11-14 2013-05-30 Toshiba Corp Semiconductor device and manufacturing method of the same
KR101900042B1 (en) 2012-05-10 2018-09-18 삼성전자주식회사 Semiconductor device and method for fabricating the same
CN103578944B (en) * 2012-07-18 2016-08-03 中国科学院微电子研究所 Method, semi-conductor device manufacturing method
US20140103452A1 (en) * 2012-10-15 2014-04-17 Marvell World Trade Ltd. Isolation components for transistors formed on fin features of semiconductor substrates
KR101923959B1 (en) * 2012-12-11 2018-12-03 한국전자통신연구원 Transistor and Method of Fabricating the Same
KR20140094917A (en) 2013-01-23 2014-07-31 삼성전자주식회사 Semiconductor Devices and Methods of Fabricating the Same
KR102037374B1 (en) * 2013-03-27 2019-10-29 삼성디스플레이 주식회사 Organic light emitting display apparatus and method of manufacturing the same
CN103325671A (en) * 2013-05-25 2013-09-25 复旦大学 Method for manufacturing T-shaped grid electrode on semiconductor surface
US9679981B2 (en) 2013-06-09 2017-06-13 Cree, Inc. Cascode structures for GaN HEMTs
US9847411B2 (en) 2013-06-09 2017-12-19 Cree, Inc. Recessed field plate transistor structures
US9755059B2 (en) 2013-06-09 2017-09-05 Cree, Inc. Cascode structures with GaN cap layers
KR102167625B1 (en) * 2013-10-24 2020-10-19 삼성전자주식회사 Semiconductor devices and methods of manufacturing the same
CN106033730A (en) * 2015-03-17 2016-10-19 中芯国际集成电路制造(上海)有限公司 Formation method of transistor
US9768261B2 (en) * 2015-04-17 2017-09-19 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method of forming the same
CN106531794B (en) * 2015-09-15 2021-02-09 联华电子股份有限公司 High voltage metal oxide semiconductor transistor element and manufacturing method thereof
US9508810B1 (en) * 2015-11-16 2016-11-29 International Business Machines Corporation FET with air gap spacer for improved overlap capacitance
US9443982B1 (en) * 2016-02-08 2016-09-13 International Business Machines Corporation Vertical transistor with air gap spacers
US10446662B2 (en) * 2016-10-07 2019-10-15 Taiwan Semiconductor Manufacturing Co., Ltd. Reducing metal gate overhang by forming a top-wide bottom-narrow dummy gate electrode
US10340352B2 (en) 2017-03-14 2019-07-02 Globalfoundries Inc. Field-effect transistors with a T-shaped gate electrode
US10840153B2 (en) * 2018-06-27 2020-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. Notched gate structure fabrication
US10832962B1 (en) 2019-05-22 2020-11-10 International Business Machines Corporation Formation of an air gap spacer using sacrificial spacer layer
US11217680B2 (en) 2019-05-23 2022-01-04 International Business Machines Corporation Vertical field-effect transistor with T-shaped gate
US11127831B2 (en) 2019-09-24 2021-09-21 Globalfoundries U.S. Inc. Transistor structure with overlying gate on polysilicon gate structure and related method
US11881506B2 (en) 2021-07-27 2024-01-23 Globalfoundries U.S. Inc. Gate structures with air gap isolation features
CN115910786A (en) * 2021-09-30 2023-04-04 联华电子股份有限公司 Semiconductor element and manufacturing method thereof

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR57461E (en) 1947-07-22 1953-01-28 Csf Process for preparing plastic masses from refractory powders to undergo subsequent heat treatment
US4570328A (en) * 1983-03-07 1986-02-18 Motorola, Inc. Method of producing titanium nitride MOS device gate electrode
US5543646A (en) 1988-09-08 1996-08-06 Mitsubishi Denki Kabushiki Kaisha Field effect transistor with a shaped gate electrode
US5089863A (en) * 1988-09-08 1992-02-18 Mitsubishi Denki Kabushiki Kaisha Field effect transistor with T-shaped gate electrode
JPH03163833A (en) 1989-11-21 1991-07-15 Mitsubishi Electric Corp Semiconductor device and manufacture thereof
JP2740087B2 (en) * 1992-08-15 1998-04-15 株式会社東芝 Method for manufacturing semiconductor integrated circuit device
US5650343A (en) 1995-06-07 1997-07-22 Advanced Micro Devices, Inc. Self-aligned implant energy modulation for shallow source drain extension formation
US6015724A (en) 1995-11-02 2000-01-18 Semiconductor Energy Laboratory Co. Manufacturing method of a semiconductor device
KR100206876B1 (en) 1995-12-28 1999-07-01 구본준 Manufacturing method of mos field effect transistors
US5981383A (en) * 1996-03-18 1999-11-09 United Microelectronics Corporation Method of fabricating a salicide layer of a device electrode
KR100325383B1 (en) * 1996-07-12 2002-04-17 니시무로 타이죠 Semiconductor device and method of manufacturing the same
JP3028114B2 (en) 1997-04-17 2000-04-04 日本電気株式会社 Method for manufacturing semiconductor device
JPH10326891A (en) 1997-05-26 1998-12-08 Mitsubishi Electric Corp Semiconductor device and manufacture thereof
FR2765394B1 (en) * 1997-06-25 1999-09-24 France Telecom PROCESS FOR OBTAINING A SILICON-GERMANIUM GRID TRANSISTOR
US5937319A (en) 1997-10-31 1999-08-10 Advanced Micro Devices, Inc. Method of making a metal oxide semiconductor (MOS) transistor polysilicon gate with a size beyond photolithography limitation by using polysilicidation and selective etching
US5990532A (en) * 1997-12-18 1999-11-23 Advanced Micro Devices Semiconductor arrangement with lightly doped regions under a gate structure
TW399270B (en) * 1998-07-24 2000-07-21 United Microelectronics Corp Method for fabricating a field effect transistor with T-type gate electrode
US6087248A (en) * 1999-01-05 2000-07-11 Texas Instruments Incorporated Method of forming a transistor having thin doped semiconductor gate
FR2791177A1 (en) 1999-03-19 2000-09-22 France Telecom PROCESS FOR PRODUCING A MUSHROOM GRILLE OR "T" GRILLE
US6124177A (en) * 1999-08-13 2000-09-26 Taiwan Semiconductor Manufacturing Company Method for making deep sub-micron mosfet structures having improved electrical characteristics
JP2001094094A (en) * 1999-09-21 2001-04-06 Hitachi Ltd Semiconductor device and fabrication method thereof
US6284613B1 (en) * 1999-11-05 2001-09-04 Chartered Semiconductor Manufacturing Ltd. Method for forming a T-gate for better salicidation
US6306710B1 (en) * 2000-02-03 2001-10-23 Advanced Micro Devices, Inc. Fabrication of a gate structures having a longer length toward the top for formation of a rectangular shaped spacer

Also Published As

Publication number Publication date
US20050104139A1 (en) 2005-05-19
EP1334512A1 (en) 2003-08-13
KR20030048131A (en) 2003-06-18
IL155912A0 (en) 2003-12-23
JP2004514290A (en) 2004-05-13
JP4391745B2 (en) 2009-12-24
WO2002041383A1 (en) 2002-05-23
CN1276487C (en) 2006-09-20
KR100550751B1 (en) 2006-02-08
US7282423B2 (en) 2007-10-16
IL146269A0 (en) 2002-07-25
US6891235B1 (en) 2005-05-10
CN1475031A (en) 2004-02-11
TW522563B (en) 2003-03-01

Similar Documents

Publication Publication Date Title
AU2002215102A1 (en) Fet with notched gate and method of manufacturing the same
AU2002317778A1 (en) Double gated transistor and method of fabrication
AU2001256755A1 (en) Biosensor and method for manufacturing the same
AU2001286254A1 (en) Gasket and method of manufacturing the gasket
EP1211169A3 (en) Resilient crawler and method of manufacturing the same
AU2002230624A1 (en) Trench gate fermi-threshold field effect transistors and methods of fabricating the same
AU2001249627A1 (en) Boot seal and method of manufacturing the same
AU2002364528A1 (en) Bio-implant and method of making the same
AU2001267079A1 (en) Integrated electronic-optoelectronic devices and method of making the same
AU2001252973A1 (en) Biosensor and related method
AU2003220243A1 (en) Gate dielectric and method therefor
AU2001262348A1 (en) Lateral semiconductor device with low on-resistance and method of making the same
AU2002359934A1 (en) Organic thin-film transistor and manufacturing method thereof
AU2169200A (en) Transistor with notched gate
AU2001269878A1 (en) Power mosfet and method of making the same
AU2002315026A1 (en) Field-effect transistor and method of making the same
AU2002329723A1 (en) Multiple polarization combiner-splitter-isolator and method of manufacturing the same
AU2001271753A1 (en) Bat and method of manufacturing
AU2001290323A1 (en) Electrochemical device and method of manufacturing the device
AU2003254803A1 (en) Sliding part and method of manufacturing the sliding part
AU2001280270A1 (en) Method of manufacturing structural members and the members provided by such method
AU2001268547A1 (en) Mosfet and method for fabrication of mosfet with buried gate
AU2384101A (en) Thin-film transistor and its manufacturing method
AU2001233932A1 (en) Method and composition
AU2002246796A1 (en) Field effect transistor with redued gate delay and method of fabricating the same