AU2001262348A1 - Lateral semiconductor device with low on-resistance and method of making the same - Google Patents

Lateral semiconductor device with low on-resistance and method of making the same

Info

Publication number
AU2001262348A1
AU2001262348A1 AU2001262348A AU6234801A AU2001262348A1 AU 2001262348 A1 AU2001262348 A1 AU 2001262348A1 AU 2001262348 A AU2001262348 A AU 2001262348A AU 6234801 A AU6234801 A AU 6234801A AU 2001262348 A1 AU2001262348 A1 AU 2001262348A1
Authority
AU
Australia
Prior art keywords
resistance
making
low
semiconductor device
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001262348A
Inventor
Nathalie Cezac
Frederic Morancho
Irenee Pages
Andre Peyre-Lavigne
Pierre Rossel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of AU2001262348A1 publication Critical patent/AU2001262348A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/063—Reduced surface field [RESURF] pn-junction structures
    • H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66681—Lateral DMOS transistors, i.e. LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Bipolar Transistors (AREA)
AU2001262348A 2000-06-09 2001-06-08 Lateral semiconductor device with low on-resistance and method of making the same Abandoned AU2001262348A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP00401643A EP1162664A1 (en) 2000-06-09 2000-06-09 Lateral semiconductor device with low on-resistance and method of making the same
EP00401643 2000-06-09
PCT/EP2001/006627 WO2001095397A1 (en) 2000-06-09 2001-06-08 Lateral semiconductor device with low on-resistance and method of making the same

Publications (1)

Publication Number Publication Date
AU2001262348A1 true AU2001262348A1 (en) 2001-12-17

Family

ID=8173723

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001262348A Abandoned AU2001262348A1 (en) 2000-06-09 2001-06-08 Lateral semiconductor device with low on-resistance and method of making the same

Country Status (6)

Country Link
US (1) US6906381B2 (en)
EP (1) EP1162664A1 (en)
JP (1) JP2004508697A (en)
KR (1) KR20030011089A (en)
AU (1) AU2001262348A1 (en)
WO (1) WO2001095397A1 (en)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1396887A1 (en) 2002-08-28 2004-03-10 Motorola, Inc. Arrangement and method for ESD protection
DE10257682A1 (en) * 2002-12-10 2004-07-08 Infineon Technologies Ag Semiconductor circuitry
DE10310552B4 (en) * 2003-03-11 2014-01-23 Infineon Technologies Ag Field effect transistor and semiconductor chip with this field effect transistor
KR100900562B1 (en) * 2003-03-24 2009-06-02 페어차일드코리아반도체 주식회사 MOS-gated transistor having improved UIS capability
US7074658B2 (en) * 2003-05-05 2006-07-11 Vanguard International Semiconductor Corporatio Structure for an LDMOS transistor and fabrication method for thereof
KR100558041B1 (en) * 2003-08-19 2006-03-07 매그나칩 반도체 유한회사 Transistor in a semiconductor device and a method of manufacturing the same
US7005703B2 (en) * 2003-10-17 2006-02-28 Agere Systems Inc. Metal-oxide-semiconductor device having improved performance and reliability
US6873011B1 (en) * 2004-02-24 2005-03-29 System General Corp. High voltage and low on-resistance LDMOS transistor having equalized capacitance
KR101068139B1 (en) 2004-04-30 2011-09-27 매그나칩 반도체 유한회사 Method for manufacturing lateral double-diffused metal oxide semiconductor field effect transistor
US7081654B2 (en) * 2004-08-26 2006-07-25 Micrel, Inc. Method and system for a programmable electrostatic discharge (ESD) protection circuit
US7473966B1 (en) * 2004-11-09 2009-01-06 Blanchard Richard A Oxide-bypassed lateral high voltage structures and methods
DE102005012217B4 (en) * 2005-03-15 2007-02-22 Infineon Technologies Austria Ag Lateral MISFET and method of making the same
US7446354B2 (en) * 2005-04-25 2008-11-04 Semiconductor Components Industries, L.L.C. Power semiconductor device having improved performance and method
US7473976B2 (en) * 2006-02-16 2009-01-06 Fairchild Semiconductor Corporation Lateral power transistor with self-biasing electrodes
JP5307973B2 (en) * 2006-02-24 2013-10-02 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー Semiconductor device
JP4989085B2 (en) * 2006-02-24 2012-08-01 オンセミコンダクター・トレーディング・リミテッド Semiconductor device and manufacturing method thereof
US7768068B1 (en) * 2006-06-05 2010-08-03 Cypress Semiconductor Corporation Drain extended MOS transistor with increased breakdown voltage
JP5161439B2 (en) * 2006-07-31 2013-03-13 オンセミコンダクター・トレーディング・リミテッド Semiconductor device
KR100770539B1 (en) 2006-08-11 2007-10-25 동부일렉트로닉스 주식회사 Semiconductor device and manufacturing method thereof
US7436025B2 (en) * 2006-09-29 2008-10-14 Freescale Semiconductor, Inc. Termination structures for super junction devices
WO2008135812A1 (en) * 2007-05-04 2008-11-13 Freescale Semiconductor, Inc. Esd protection device and method of forming an esd protection device
US9484451B2 (en) 2007-10-05 2016-11-01 Vishay-Siliconix MOSFET active area and edge termination area charge balance
CN101969074B (en) * 2010-10-28 2012-07-04 电子科技大学 High voltage lateral double diffused MOSFET element
DE102011002857A1 (en) * 2011-01-19 2012-07-19 Ihp Gmbh - Innovations For High Performance Microelectronics / Leibniz-Institut Für Innovative Mikroelektronik Semiconductor device with a BiLDMOS or SOI-BiLDMOS transistor, and cascode circuit
TWI426611B (en) * 2011-03-25 2014-02-11 Richtek Technology Corp Semiconductor overlapped pn structure and manufacturing method thereof
CN102738208B (en) * 2011-04-01 2016-04-13 立锜科技股份有限公司 Semiconductor PN overlapping configuration manufacture method
US9431249B2 (en) * 2011-12-01 2016-08-30 Vishay-Siliconix Edge termination for super junction MOSFET devices
US9614043B2 (en) 2012-02-09 2017-04-04 Vishay-Siliconix MOSFET termination trench
US9842911B2 (en) 2012-05-30 2017-12-12 Vishay-Siliconix Adaptive charge balanced edge termination
KR20140029027A (en) 2012-08-31 2014-03-10 에스케이하이닉스 주식회사 Semiconductor device
CN103681861B (en) * 2012-08-31 2016-08-17 新唐科技股份有限公司 Semiconductor device and method for manufacturing the same
US9461166B2 (en) * 2013-11-05 2016-10-04 United Microelectronics Corp. Lateral-diffused metal oxide semiconductor device and fabricating method thereof
CN104716178A (en) * 2013-12-11 2015-06-17 上海华虹宏力半导体制造有限公司 LDMOS device with deep hole and manufacturing method of LDMOS device
US9508596B2 (en) 2014-06-20 2016-11-29 Vishay-Siliconix Processes used in fabricating a metal-insulator-semiconductor field effect transistor
US9887259B2 (en) 2014-06-23 2018-02-06 Vishay-Siliconix Modulated super junction power MOSFET devices
EP3183754A4 (en) 2014-08-19 2018-05-02 Vishay-Siliconix Super-junction metal oxide semiconductor field effect transistor
JP2016092032A (en) * 2014-10-29 2016-05-23 サンケン電気株式会社 Semiconductor device
KR102276905B1 (en) 2015-01-29 2021-07-12 삼성전자주식회사 Semiconductor device
TWI609486B (en) * 2016-12-30 2017-12-21 新唐科技股份有限公司 High voltage semiconductor device
TWI634658B (en) * 2017-12-29 2018-09-01 新唐科技股份有限公司 Semiconductor device
CN111524961B (en) 2019-02-28 2021-02-02 长江存储科技有限责任公司 High voltage semiconductor device with increased breakdown voltage and method of manufacturing the same
CN112701150A (en) * 2019-10-23 2021-04-23 世界先进积体电路股份有限公司 Semiconductor structure
US20210343837A1 (en) * 2020-05-01 2021-11-04 Vanguard International Semiconductor Corporation Semiconductor structures
CN112018171A (en) * 2020-07-28 2020-12-01 广东美的白色家电技术创新中心有限公司 Insulated gate bipolar transistor, intelligent power device and electronic product
KR102470681B1 (en) * 2022-06-14 2022-11-25 (주) 트리노테크놀로지 Lateral power semiconductor device in Silicon Carbide and manufacturing method thereof
CN115662900A (en) * 2022-10-21 2023-01-31 苏州华太电子技术股份有限公司 Manufacturing method of super junction LDMOS device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0456360A (en) * 1990-06-26 1992-02-24 Takehide Shirato Metal-insulator semiconductor field-effect transistor
EP0571027A1 (en) * 1992-05-21 1993-11-24 Koninklijke Philips Electronics N.V. Semiconductor device comprising a lateral DMOST with breakdown voltage raising zones and provisions for exchanging charge with the back gate region
DE19531369A1 (en) * 1995-08-25 1997-02-27 Siemens Ag Silicon-based semiconductor device with high-blocking edge termination
GB2309336B (en) * 1996-01-22 2001-05-23 Fuji Electric Co Ltd Semiconductor device
DE19800647C1 (en) * 1998-01-09 1999-05-27 Siemens Ag SOI HV switch with FET structure
DE19923466B4 (en) * 1999-05-21 2005-09-29 Infineon Technologies Ag Junction-isolated lateral MOSFET for high / low-side switches

Also Published As

Publication number Publication date
JP2004508697A (en) 2004-03-18
US20040222461A1 (en) 2004-11-11
US6906381B2 (en) 2005-06-14
KR20030011089A (en) 2003-02-06
WO2001095397A1 (en) 2001-12-13
EP1162664A1 (en) 2001-12-12

Similar Documents

Publication Publication Date Title
AU2001262348A1 (en) Lateral semiconductor device with low on-resistance and method of making the same
AU2002217545A1 (en) Semiconductor device and its manufacturing method
AU2001267079A1 (en) Integrated electronic-optoelectronic devices and method of making the same
AU2001291257A1 (en) Multigate semiconductor device with vertical channel current and method of fabrication
SG100769A1 (en) Semiconductor device and method of manufacturing the same
AU2001267880A1 (en) Semiconductor device and method for fabricating the same
GB2366911B (en) Semiconductor device having desired gate profile and method of fabricating the same
AU2001275105A1 (en) Power mosfet and method of making the same
AU2001275340A1 (en) Integrated active flux microfluidic devices and methods
GB0017158D0 (en) Thin-film semiconductor device and method of manufacture
AU2001273116A1 (en) Semiconductor device and method of formation
AU2001277779A1 (en) Semiconductor device and method of its manufacture
AU2002329563A1 (en) Trench-gate semiconductor devices and their manufacture
AU2002219529A1 (en) Semiconductor device and method for fabricating the same
AU2001269878A1 (en) Power mosfet and method of making the same
EP1202350A3 (en) Semiconductor device and manufacturing method thereof
AU2002349581A1 (en) Semiconductor device and manufacturing method thereof
AU2002315026A1 (en) Field-effect transistor and method of making the same
GB2373635B (en) Semiconductor device and method of manufacturing the same
AU2001294188A1 (en) Device and method for manufacturing semiconductor
AU2001290323A1 (en) Electrochemical device and method of manufacturing the device
AU2002228766A1 (en) Semiconductor device and method of making same
EP1174916A3 (en) Semiconductor device and semiconductor device manufacturing method
EP1174914A3 (en) Semiconductor device and semiconductor device manufacturing method
AU2001257346A1 (en) Semiconductor device and method for manufacturing the same