AU2001268547A1 - Mosfet and method for fabrication of mosfet with buried gate - Google Patents

Mosfet and method for fabrication of mosfet with buried gate

Info

Publication number
AU2001268547A1
AU2001268547A1 AU2001268547A AU6854701A AU2001268547A1 AU 2001268547 A1 AU2001268547 A1 AU 2001268547A1 AU 2001268547 A AU2001268547 A AU 2001268547A AU 6854701 A AU6854701 A AU 6854701A AU 2001268547 A1 AU2001268547 A1 AU 2001268547A1
Authority
AU
Australia
Prior art keywords
mosfet
fabrication
buried gate
buried
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001268547A
Inventor
Igor Bol
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies Americas Corp
Original Assignee
International Rectifier Corp USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Rectifier Corp USA filed Critical International Rectifier Corp USA
Publication of AU2001268547A1 publication Critical patent/AU2001268547A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thyristors (AREA)
AU2001268547A 2000-06-19 2001-06-18 Mosfet and method for fabrication of mosfet with buried gate Abandoned AU2001268547A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09593447 2000-06-19
US09/593,447 US6570218B1 (en) 2000-06-19 2000-06-19 MOSFET with a buried gate
PCT/US2001/019509 WO2002001645A1 (en) 2000-06-19 2001-06-18 Mosfet and method for fabrication of mosfet with buried gate

Publications (1)

Publication Number Publication Date
AU2001268547A1 true AU2001268547A1 (en) 2002-01-08

Family

ID=24374744

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001268547A Abandoned AU2001268547A1 (en) 2000-06-19 2001-06-18 Mosfet and method for fabrication of mosfet with buried gate

Country Status (3)

Country Link
US (2) US6570218B1 (en)
AU (1) AU2001268547A1 (en)
WO (1) WO2002001645A1 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4363736B2 (en) * 2000-03-01 2009-11-11 新電元工業株式会社 Transistor and manufacturing method thereof
US7531395B2 (en) 2004-09-01 2009-05-12 Micron Technology, Inc. Methods of forming a layer comprising epitaxial silicon, and methods of forming field effect transistors
US8673706B2 (en) * 2004-09-01 2014-03-18 Micron Technology, Inc. Methods of forming layers comprising epitaxial silicon
US7132355B2 (en) * 2004-09-01 2006-11-07 Micron Technology, Inc. Method of forming a layer comprising epitaxial silicon and a field effect transistor
US7144779B2 (en) * 2004-09-01 2006-12-05 Micron Technology, Inc. Method of forming epitaxial silicon-comprising material
US8338887B2 (en) 2005-07-06 2012-12-25 Infineon Technologies Ag Buried gate transistor
US20070082454A1 (en) * 2005-10-12 2007-04-12 Infineon Technologies Ag Microelectronic device and method of manufacturing a microelectronic device
US20090179262A1 (en) * 2008-01-16 2009-07-16 Qimonda Ag Floating Body Memory Cell with a Non-Overlapping Gate Electrode
US9136397B2 (en) 2013-05-31 2015-09-15 Infineon Technologies Ag Field-effect semiconductor device
US9184281B2 (en) 2013-10-30 2015-11-10 Infineon Technologies Ag Method for manufacturing a vertical semiconductor device and vertical semiconductor device
US9780208B1 (en) * 2016-07-18 2017-10-03 Globalfoundries Inc. Method and structure of forming self-aligned RMG gate for VFET
US20220238698A1 (en) * 2021-01-26 2022-07-28 Pakal Technologies, Inc. Mos-gated trench device using low mask count and simplified processing

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2623850B2 (en) * 1989-08-25 1997-06-25 富士電機株式会社 Conductivity modulation type MOSFET
US5554862A (en) * 1992-03-31 1996-09-10 Kabushiki Kaisha Toshiba Power semiconductor device
US5233215A (en) * 1992-06-08 1993-08-03 North Carolina State University At Raleigh Silicon carbide power MOSFET with floating field ring and floating field plate
JPH0637323A (en) * 1992-07-20 1994-02-10 Oki Electric Ind Co Ltd Vertical type mosfet device and manufacture thereof
US5592005A (en) * 1995-03-31 1997-01-07 Siliconix Incorporated Punch-through field effect transistor
WO1998012756A1 (en) 1996-09-19 1998-03-26 Ngk Insulators, Ltd. Semiconductor device and process for manufacturing the same
US6172398B1 (en) 1997-08-11 2001-01-09 Magepower Semiconductor Corp. Trenched DMOS device provided with body-dopant redistribution-compensation region for preventing punch through and adjusting threshold voltage
KR100275756B1 (en) * 1998-08-27 2000-12-15 김덕중 Trench insulated gate bipolar transistor
US6316806B1 (en) * 1999-03-31 2001-11-13 Fairfield Semiconductor Corporation Trench transistor with a self-aligned source

Also Published As

Publication number Publication date
US6570218B1 (en) 2003-05-27
WO2002001645A1 (en) 2002-01-03
US6858499B2 (en) 2005-02-22
US20040191971A1 (en) 2004-09-30

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