WO2009108275A2 - Ceramic coating comprising yttrium which is resistant to a reducing plasma - Google Patents
Ceramic coating comprising yttrium which is resistant to a reducing plasma Download PDFInfo
- Publication number
- WO2009108275A2 WO2009108275A2 PCT/US2009/000949 US2009000949W WO2009108275A2 WO 2009108275 A2 WO2009108275 A2 WO 2009108275A2 US 2009000949 W US2009000949 W US 2009000949W WO 2009108275 A2 WO2009108275 A2 WO 2009108275A2
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- WIPO (PCT)
- Prior art keywords
- plasma
- yttrium
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- coating
- spray
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
- C23C4/11—Oxides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
- Y10T428/249967—Inorganic matrix in void-containing component
- Y10T428/24997—Of metal-containing material
Definitions
- Embodiments of the present invention relate to a plasma or flame sprayed yttrium-comprising coating useful as a protective coating over processing surfaces in a semiconductor processing environment.
- the plasma or flame sprayed yttrium- comprising coating is particularly useful in a reducing plasma to prevent particulate contamination of a substrate which is being processed.
- Background [0007] This section describes background subject matter related to the disclosed embodiments of the present invention. There is no intention, either express or implied, that the background art discussed in this section legally constitutes prior art.
- Corrosion (including erosion) resistance is a critical property for apparatus Attorney Docket No. AM-13,105 U.S. Express Mail No. EB 998981698 US
- corrosive plasmas are present in the majority of semiconductor processing environments, including plasma enhanced chemical vapor deposition (PECVD) and physical vapor deposition (PVD), the most corrosive plasma environments are those used for cleaning of processing apparatus and those used to etch semiconductor substrates. This is especially true where high-energy plasma is present and combined with chemical reactivity to act upon the surface of components present in the environment.
- the high-energy plasma is a reducing plasma, such as a hydrogen species-containing plasma
- the formation of particulates in the processing chamber has been observed to be a problem. The particulates often contaminate the surfaces of devices contained in a substrate which is processed in the semiconductor processing chamber.
- Process chamber liners and component apparatus present within the processing chambers used to fabricate electronic devices and micro-electro-mechanical systems (MEMS) are frequently constructed from aluminum and aluminum alloys. Surfaces of the process chamber and component apparatus (present within the chamber) are frequently anodized to provide a degree of protection from the corrosive environment. However, the integrity of the anodization layer may be deteriorated by impurities in the aluminum or aluminum alloy, so that corrosion begins to occur early, shortening the life span of the protective coating. The plasma resistance properties of aluminum oxide are not positive in comparison with some other ceramic materials.
- Yttrium oxide is a ceramic material which has shown considerable promise in the protection of aluminum and aluminum alloy surfaces which are exposed to halogen- Attorney Docket No. AM-13,105 U.S. Express Mail No. EB 998981698 US
- the substrate base material of the chamber wall or liner, of an apparatus component may be a ceramic material (Al 2 O 3 , SiO 2 , AlN, etc.), may be aluminum, or stainless steel, or may be another metal or metal alloy. Any of these may have a sprayed film over the base material.
- the film may be made of a compound of a IH-B element of the periodic table, such as Y 2 O 3 .
- the film may substantially comprise Al 2 O 3 and Y 2 O 3 .
- a sprayed film of yttrium-aluminum-garnet (YAG) has also been mentioned. Examples of a sprayed film thickness range from 50 ⁇ m to 300 ⁇ m, for example.
- YAG yttrium-aluminum-garnet
- particulates and contaminants produced during the IC fabrication operations have reduced the yield of acceptable devices.
- IC integrated circuit
- yttrium-comprising ceramics included yttrium oxide (Y 2 O 3) , Y 2 O 3 -ZrO 2 solid solution, YAG, and YF 3 in addition to more exotic ceramic coating compositions designed to provide particular mechanical, physical or electrical properties.
- plasma spray-coating apparatus prior to the present invention was about 25 ⁇ m or larger.
- An unexpected improvement in corrosion/erosion resistance to reducing plasmas was obtained when the effective particle diameter fed to a plasma spray-coating apparatus was reduced to less than about 22 ⁇ m , and typically less than about 15 ⁇ m, with the effective particle diameter frequently ranging between about 15 ⁇ m and about 5 ⁇ m.
- Smaller effective particle diameter powders, down to 0.1 ⁇ m, may be used in instances when the spray-coating system can be adapted to handle such particles.
- Substrates spray- coated using the reduced particle size powders show a corresponding substantial and unexpected reduction in the average porosity of the yttrium-comprising spray coating.
- the average porosity of the yttrium oxide coating produced using the previous spray coating technique which employed an effective powder diameter for the yttrium oxide of 25 ⁇ m or larger, ranges from above 1.5 % to about 4 %, measured using Image-Pro PlusTM Version 6.0 software in combination with an SEM microstructure image.
- a yttrium oxide coating having an average porosity of about 0.47 % was achieved using a 15 ⁇ m effective powder diameter.
- the average surface roughness of the yttrium oxide coating produced using the 25 ⁇ m effective diameter powder was about 200 ⁇ -inch Ra (5.0 ⁇ m Ra) compared with an average surface roughness of only 51.2 ⁇ -inch Ra (1.28 ⁇ m Ra) for the yttrium oxide coating produced using the 15 ⁇ m diameter powder yttrium oxide feed to the laser spray coating apparatus.
- the average surface roughness may range from about 3 ⁇ m Ra to about 0.6 ⁇ m Ra.
- the yttrium oxide coating produced using the 25 ⁇ m effective diameter yttrium oxide powder performed well for about 7.5 - 8 hours, while the yttrium oxide coating produced using the 15 ⁇ m (or smaller) diameter powder performed well for a time period in excess of 10 hours.
- the break down voltage (V BD ) for the yttrium oxide coating produced using the 25 ⁇ m diameter powder was 750 V/mil, while the break down voltage for the yttrium oxide coating produced using the 15 ⁇ m diameter powder was at least 875 V/mil.
- the sprayed coatings having a thickness of 300 ⁇ m or less exhibit porosities ranging from about 0.15 % to less than about 1.5 %, measured using the Image-Pro PlusTM software in the manner previously described.
- Empirically generated data showed that a spray-coated yttrium oxide processing component produced using the improved spray coating technique employing the smaller effective diameter powders, according to embodiments of the present invention, was even more resistant to erosion in a reducing plasma and produced fewer particulates than a solid yttrium oxide component. This was presumed to be due to the fact that the solid yttrium oxide component required the use of a sintering additive, which Attorney Docket No. AM-13,105 U.S. Express Mail No. EB 998981698 US
- YAG Yttrium Aluminum Garnet, which is commonly used in a Y 3 Al 5 O 12 form
- a Y 2 O 3 -ZrO 2 solid solution or a YF 3 composition (or a combination thereof) to the plasma spray-coating apparatus to form a YAG, or Y 2 O 3 -ZrO 2 solid solution, or YF 3 (or a combination thereof) coating.
- These materials reduce or avoid, respectively the formation of Y(OH) 3 .
- Figure 1 is a cross-sectional schematic 100 of one type of plasma spraying system of the kind known in the art which may be used to apply coatings of the present invention.
- Figures 2A, 2B, and 2C show comparative photomicrographs 200, 210, and 220 of the surface of a previously known as-coated plasma sprayed yttrium oxide coating at magnifications of 300X, 1000X, and 500OX, respectively.
- Figures 2D, 2E, and 2F show photomicrographs 230, 240, and 250 of the surface of the as-coated plasma sprayed yttrium oxide coating illustrated in Figures 2 A through 2C after exposure to a reducing chemistry plasma.
- Figure 2D is at a magnification of 300X
- Figure 2E is at a magnification of 100OX
- Figure 2F is at a magnification of 5000X.
- Figures 3 A, 3B, and 3 C show photomicrographs 300, 310, and 320 of the surface of a lapped (polished) as-coated plasma sprayed yttrium oxide coating at Attorney Docket No. AM-13,105 U.S. Express Mail No. EB 998981698 US
- magnifications of 300X, 100OX, and 5000X respectively.
- Figures 3D, 3E, and 3F show photomicrographs 330, 340, and 350 of the surface of the lapped (polished) sprayed yttrium oxide coating illustrated in Figures 3 A through 3 C after exposure to a reducing chemistry plasma.
- Figure 3D is at a magnification of 300X
- Figure 3E is at a magnification of 100OX
- Figure 3F is at a magnification of 5000X.
- Figure 4A is a comparative example which shows a graph 400 of the range of the surface roughness in microns from a centerline 410 along the surface of an as-coated plasma sprayed yttrium oxide coating produced using the technology available prior to the present invention.
- Figure 4B shows a graph 420 of the range of the surface roughness in microns from a centerline 430 along the surface of an as-coated plasma sprayed yttrium oxide coating produced using the technology of embodiments of the present invention.
- Figures 5 A and 5B are comparative photomicrographs 510 and 520, which show a top view of the morphology of a plasma sprayed yttrium oxide coating prepared using plasma spray technology prior to the present invention, at magnifications of 200X and 1000X, respectively.
- Figures 5C and 5D are photomicrographs 530 and 540, which show a top view of the morphology of plasma sprayed yttrium oxide coating prepared using the plasma spray technology of an embodiment of the present invention, at magnifications of 200X and 1000X, respectively.
- Figure 6A is a photomicrograph 600 showing a cross-sectional side view of an aluminum alloy substrate 602 having a yttrium oxide coating 606 deposited over the surface 604 of the aluminum alloy substrate 602. This is a comparative photomicrograph which shows the characteristics of this structure which was prepared using plasma spray technology prior to the present invention, at a magnification of 200X.
- Figure 6B is a photomicrograph 610 showing a cross-sectional side view of an aluminum alloy substrate 612 having a yttrium oxide coating 616 deposited over the surface 614 of the aluminum alloy substrate 612. This photomicrograph shows the characteristics of this structure which was prepared using plasma spray technology which is an embodiment of the present invention, at a magnification of 200X.
- Figure 7A shows a block diagram 700 which compares an erosion rate for a plasma sprayed yttrium oxide coating (over an aluminum alloy substrate) applied using the prior art spray coating technology 704, with the erosion rate for a bulk substrate of yttrium oxide 706, with the erosion rate for a plasma sprayed yttrium oxide coating (over an aluminum substrate) applied using an embodiment of the present invention 708, where each of these test specimen substrates was exposed to the same plasma containing reducing species.
- Figure 7B shows a block diagram 720 which compares an erosion rate for a series bulk, sintered materials. Each of these test specimen substrates was exposed to the same plasma containing reducing species.
- Figure 8 shows a Table 800, listing the compositions of the various bulk materials for which the erosion rates are presented in Figure 7B.
- Figure 9 shows a phase diagram 900 showing the majority of the materials which are listed in Table 800.
- FIG. 1 shows a cross-sectional schematic 100 of a type of plasma spraying system which is useful in applying the coatings of the present invention.
- the particular apparatus illustrated in Figure 1 is an APS 7000 Series Aeroplasma Spraying System available from Aeroplasma K.K. (Tokyo, Japan).
- the apparatus 100 includes the following components: first DC main electrode 102; first auxiliary electrode 104; first argon source 106; first air source 108; spray material powder source 110; cathode torch 112; accelerator nozzle 114; plasma arc 116; second DC main electrode 118; second auxiliary electrode 120; anode torch 122; spray base material source 124; second argon source 126; second air source (plasma trimming) 128 (128A and 128B); spray film 130; plasma jet 132; molten powder source 134; third argon source 136; and twin anode ⁇ torch 138.
- Twin anode ⁇ torch 138 consists of two anode torches, so that each of the anode torches bears half of the thermal load. Using twin anode torch ⁇ 138, a high voltage can be obtained with relatively low current, so that the thermal load on each of the torches will be low. Each nozzle and electrode rod of the torches is water-cooled separately, and the arc starting point and ending point are protected by inert gas, so that stable operation at 200 hours or more is ensured, the service life of consumed parts is extended, and maintenance costs are reduced. [0049] A stable high temperature arc is formed between the cathode torch 112 and the Attorney Docket No. AM-13,105 U.S. Express Mail No. EB 998981698 US
- anode torch 122 and spray material can be fed directly into the arc.
- the spray material is completely melted by the high temperature arc column.
- the arc starting and ending points are protected by inert gas, so that air or oxygen can be used for the plasma gas introduced through the accelerator nozzle 1 14.
- a plasma trimming function 128 is used for twin anode ⁇ . Plasma -trimming trims the heat of the plasma jet that does not contribute to melting of the spray material, and reduces the thermal load on the substrate material and film to make spraying at short distances possible.
- While one kind of plasma spray coating apparatus is shown in Figure 1, one skilled in the art will recognize that other kinds of coating apparatus can be used to carry out the present invention as well.
- Figures 2A, 2B, and 2C show comparative photomicrographs 200, 210, and 220 of the upper surface of an as-coated plasma sprayed yttrium oxide coating having a thickness of about 200 ⁇ m, which was deposited using the technology prior to the present invention.
- the photomicrographs are at magnifications of 300X, 1000X 5 and 5000X, respectively.
- the flaky surface texture, which would enable direct particulate formation is readily apparent at all of the magnifications, but particularly at the 5000X magnification.
- Figures 2D, 2E, and 2F show photomicrographs 230, 240, and 250 of the surface of the as-coated plasma sprayed yttrium oxide coating illustrated in Figures 2A through 2C after exposure to a reducing chemistry plasma.
- Figure 2D is at a magnification of 300X
- Figure 2E is at a magnification of 100OX
- Figure 2F is at a magnification of 5000X.
- the reducing plasma recipe was and is as shown in Table One, for the data in Figures 2, 3, and Figure 7B, in a 300 mm eMaxTM CT+ chamber of the Attorney Docket No. AM-13, 105 U.S. Express Mail No. EB 998981698 US
- test specimen substrate evaluated was located on the wafer and then put at the ESC location within the processing chamber. It is clear that a large amount of the flaky topography which was illustrated in Figures 2A, 2B, and 2C has been removed during exposure to the reducing plasma. It is likely that the material which was removed is accountable for particulates which appear on the surface of a device-containing semiconductor structure processed using the reducing chemistry plasma.
- Figures 3 A, 3B, and 3C show photomicrographs 300, 310, and 320 of the surface of a lapped (polished) as-coated plasma sprayed yttrium oxide coating at magnifications of 300X, 100OX, and 5000X respectively. It is readily apparent that the flaky material has been removed from the upper surface of the coating.
- Figures 3D, 3E, and 3F show photomicrographs 330, 340, and 350 of the surface of the lapped (polished) plasma sprayed yttrium oxide coating illustrated in Figures 3A through 3C after exposure to a reducing chemistry plasma.
- Figure 3D is at a magnification of 300X
- Figure 3E is at a magnification of 1000X
- Figure 3F is at a magnification of 5000X.
- the reducing plasma was produced in the manner described in Attorney Docket No. AM-13, 105 U.S. Express Mail No. EB 998981698 US
- Another embodiment of the present invention pertains to improvement of the spray coating technique, to obtain a more dense spray coating which would be less susceptible to attack by reducing plasmas.
- a substantial, unexpected reduction in porosity and surface roughness of the spray-coated yttrium oxide surface could be obtained by using a smaller particle size yttrium oxide powder feed to the plasma spray coating apparatus which was used to apply the coating to the aluminum alloy substrate.
- the average, conventional effective particle diameter of yttrium oxide powder fed to the plasma spray-coating apparatus prior to the present invention was larger than 25 ⁇ m in diameter.
- Empirical data was developed which showed that a reduction in this average powder diameter to about 22 ⁇ m or smaller, typically ranging between about 15 ⁇ m and about 0.1 ⁇ m, significantly reduced the porosity of the yttrium oxide coating produced on the aluminum alloy substrate surface.
- Table Two shows the improvement in the physical properties of a plasma sprayed yttrium oxide coating, which properties were achieved using an embodiment of the present invention in which the size of the yttrium oxide powder feed Attorney Docket No. AM- 13 , 105 U.S. Express Mail No. EB 998981698 US
- the average porosity of the yttrium oxide coating produced using the conventional 25 ⁇ m diameter yttrium oxide powder ranged from about 1.5 % to about 4%, while the average porosity of the yttrium oxide coating produced using a size-reduced equivalent diameter yttrium oxide powder size ranged from less than 1.5 % down to about 0.15 %.
- a 15 ⁇ m equivalent diameter powder produced a coating having a porosity of about 0.47 %. This decrease in porosity is particularly significant as an indicator of the ease of attack of the plasma containing reducing species.
- the average surface roughness Ra of the yttrium oxide coating produced using the conventional 25 ⁇ m diameter powder was about 200 ⁇ -inch Ra (5.0 ⁇ m Ra) compared with an average Attorney Docket No. AM-13,105 U.S. Express Mail No. EB 998981698 US
- FIG. 4 A is a comparative example which shows a graph 400 of the range of the surface roughness in microns from a centerline 410 along the surface of an as-coated plasma sprayed yttrium oxide coating produced using the technology available prior to the present invention.
- Figure 4B shows a graph 420 of the range of the surface roughness in microns from a centerline 430 along the surface of an as-coated plasma sprayed yttrium oxide coating.
- the plasma-sprayed coating was produced using the embodiment of the invention in which a reduced effective diameter powder is fed to the plasma spraying apparatus.
- FIGS. 5 A and 5B are comparative photomicrographs 510 and 520, which show a top view of the morphology of a plasma sprayed yttrium oxide coating prepared using plasma spray technology prior to the present invention, at magnifications of 200X and 100OX, respectively.
- Figures 5C and 5D are photomicrographs 530 and 540, which show a top view of the morphology of plasma sprayed yttrium oxide coating prepared using the embodiment of the present invention in which a reduced effective diameter powder is fed to the plasma spraying apparatus.
- Figures 5C and 5D are at magnifications of 200X and 100OX, respectively.
- a comparison of Figures 5 A and 5B with Figures 5 C and 5D illustrates the reduction in surface area which is subject to attack by the plasma.
- Figure 6A is a comparative photomicrograph 600 showing a cross-sectional side view of an aluminum alloy substrate 602 having a yttrium oxide coating 606 deposited over the surface 604 of the aluminum alloy substrate 602.
- This comparative photomicrograph shows the characteristics of the structure which was prepared using plasma spray technology prior to the present invention, to produce a yttrium oxide coating having a thickness of about 200 ⁇ m.
- the magnification in the photomicrograph is 200X.
- the aluminum alloy substrate 602 of the test specimen is shown at the base of the photomicrograph 600.
- the roughness of the surface 604 of the aluminum alloy is clearly defined.
- the general porosity of the spray coated yttrium oxide 606 is also Attorney Docket No. AM- 13, 105 U.S. Express Mail No. EB 998981698 US
- Figure 6B is a photomicrograph 610 which shows the improvement in the plasma spray-coated yttrium oxide coating achieved when the reduced effective diameter powder size yttrium oxide is fed to the plasma sprayer.
- Figure 6B shows a cross- sectional side view of an aluminum alloy substrate 612 having a yttrium oxide coating 616 deposited over the surface 614 of the aluminum alloy substrate. Again, the magnification is 200X. The aluminum alloy substrate 612 of the test specimen is shown at the base of the photomicrograph 610.
- FIG. 6A shows a block diagram 700 which compares an erosion rate for a for various yttrium oxide-comprising substrates.
- Block 704 shows the erosion rate for a plasma sprayed yttrium oxide coating (over an aluminum alloy substrate) applied using the previous spray coating method, which employed yttrium oxide particle feed to the plasma sprayer which had an average effective particle diameter of 25 ⁇ m or larger.
- Block 706 shows the erosion rate for a bulk specimen substrate (of the kind previously known in the art) of yttrium oxide 706.
- Block 708 shows the erosion rate for a plasma sprayed yttrium oxide coating (over an aluminum substrate, where the yttrium oxide coating was applied using an embodiment Attorney Docket No. AM- 13, 105 U.S. Express Mail No. EB 998981698 US
- NSTU Neutral Species Tuning Unit (ratio). **CSTU: Changed Species Tuning Unit (Ampere).
- Figure 7B shows a block diagram 720 which compares an erosion rate for a series of bulk materials, each having a different chemical composition. Each of these test specimens was exposed to the same plasma containing reducing species per the recipe provided in Table One, in the 300 mm eMax CT+ processing chamber. The performance of YAG bulk material confirmed the theories about the avoidance of the formation of Y(OH) 3 in a reducing plasma as a method of improving erosion resistance.
- Block 724 represents an HFOl substrate
- Block 726 represents an NB04 substrate
- Block 728 represents a Y-ZrO2 substrate
- Block 730 represents an NBOl substrate
- Block 732 represents an HPM substrate
- Block 734 represents a YA3070 substrate
- Block 736 represents a Y2O3 substrate
- Block 738 represents a YZ20 substrate
- Block 740 represents a YAG substrate.
- Blocks 736, 738, and 740 are of the highest interest, because they represent bulk substrates for Y 2 O 3 , a Y 2 O 3 -ZrO 2 solid solution containing 20 atomic % ZrO 2 , and YAG, respectively.
- Figure 8 shows a Table 800, which lists the chemical compositions of various starting powders of various bulk materials, the erosion rates of which are illustrated in Figure 7B.
- Figure 9 shows a phase diagram 900 which illustrates the chemical compositions of starting powders and phases in the final materials formed, where the materials are listed in Table 800.
- the discovery was made that the mechanism of attack of the yttrium oxide surface is through the formation of yttrium hydroxide, Y(OH) 3 .
- thermodynamics data (Gibbs formation free energy) for various Attorney Docket No. AM- 13, 105 U.S. Express Mail No. EB 998981698 US
- YAG, Y 2 O 3 -ZrO 2 solid solution, or YF 3 , or combinations thereof are excellent materials for use as a protective coating in a plasma environment which contains reducing active species.
- V BD break down voltage
- the average (equivalent diameter) particle size of the powder used to deposit a plasma sprayed YAG, Y 2 O 3 -ZrO 2 solid solution , or YF 3 coating ranges from about 22 ⁇ m to about 5 ⁇ m.
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- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Coating By Spraying Or Casting (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010547620A JP5674479B2 (ja) | 2008-02-26 | 2009-02-13 | 還元プラズマに耐性のイットリウム含有セラミックコーティング |
| CN200980106482.6A CN102084020B (zh) | 2008-02-26 | 2009-02-13 | 可抵抗还原等离子体的含钇陶瓷涂层 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/072,530 | 2008-02-26 | ||
| US12/072,530 US20090214825A1 (en) | 2008-02-26 | 2008-02-26 | Ceramic coating comprising yttrium which is resistant to a reducing plasma |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| WO2009108275A2 true WO2009108275A2 (en) | 2009-09-03 |
| WO2009108275A3 WO2009108275A3 (en) | 2009-11-05 |
| WO2009108275A9 WO2009108275A9 (en) | 2011-02-03 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US2009/000949 Ceased WO2009108275A2 (en) | 2008-02-26 | 2009-02-13 | Ceramic coating comprising yttrium which is resistant to a reducing plasma |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20090214825A1 (https=) |
| JP (1) | JP5674479B2 (https=) |
| KR (1) | KR20100118994A (https=) |
| CN (1) | CN102084020B (https=) |
| SG (2) | SG187415A1 (https=) |
| TW (1) | TWI455820B (https=) |
| WO (1) | WO2009108275A2 (https=) |
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| US9017481B1 (en) | 2011-10-28 | 2015-04-28 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
| US9238863B2 (en) * | 2012-02-03 | 2016-01-19 | Tocalo Co., Ltd. | Method for blackening white fluoride spray coating, and fluoride spray coating covered member having a blackened layer on its surface |
| US9034199B2 (en) | 2012-02-21 | 2015-05-19 | Applied Materials, Inc. | Ceramic article with reduced surface defect density and process for producing a ceramic article |
| US9212099B2 (en) | 2012-02-22 | 2015-12-15 | Applied Materials, Inc. | Heat treated ceramic substrate having ceramic coating and heat treatment for coated ceramics |
| US9090046B2 (en) * | 2012-04-16 | 2015-07-28 | Applied Materials, Inc. | Ceramic coated article and process for applying ceramic coating |
| US9394615B2 (en) * | 2012-04-27 | 2016-07-19 | Applied Materials, Inc. | Plasma resistant ceramic coated conductive article |
| US20130288037A1 (en) * | 2012-04-27 | 2013-10-31 | Applied Materials, Inc. | Plasma spray coating process enhancement for critical chamber components |
| KR101932429B1 (ko) * | 2012-05-04 | 2018-12-26 | (주)코미코 | 내 플라즈마 코팅막, 이의 제조 방법 및 내 플라즈마성 부품 |
| JP6235471B2 (ja) * | 2012-06-20 | 2017-11-22 | 東京エレクトロン株式会社 | シーズニング方法、プラズマ処理装置及び製造方法 |
| US9267739B2 (en) | 2012-07-18 | 2016-02-23 | Applied Materials, Inc. | Pedestal with multi-zone temperature control and multiple purge capabilities |
| US9604249B2 (en) | 2012-07-26 | 2017-03-28 | Applied Materials, Inc. | Innovative top-coat approach for advanced device on-wafer particle performance |
| US9343289B2 (en) | 2012-07-27 | 2016-05-17 | Applied Materials, Inc. | Chemistry compatible coating material for advanced device on-wafer particle performance |
| US9373517B2 (en) | 2012-08-02 | 2016-06-21 | Applied Materials, Inc. | Semiconductor processing with DC assisted RF power for improved control |
| JP5939084B2 (ja) | 2012-08-22 | 2016-06-22 | 信越化学工業株式会社 | 希土類元素オキシフッ化物粉末溶射材料の製造方法 |
| US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
| US20140099794A1 (en) * | 2012-09-21 | 2014-04-10 | Applied Materials, Inc. | Radical chemistry modulation and control using multiple flow pathways |
| US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
| CN103794460B (zh) * | 2012-10-29 | 2016-12-21 | 中微半导体设备(上海)有限公司 | 用于半导体装置性能改善的涂层 |
| CN103794459B (zh) * | 2012-10-29 | 2016-04-06 | 中微半导体设备(上海)有限公司 | 用于等离子处理腔室的气体喷淋头及其涂层形成方法 |
| US9916998B2 (en) | 2012-12-04 | 2018-03-13 | Applied Materials, Inc. | Substrate support assembly having a plasma resistant protective layer |
| US9685356B2 (en) | 2012-12-11 | 2017-06-20 | Applied Materials, Inc. | Substrate support assembly having metal bonded protective layer |
| US8941969B2 (en) | 2012-12-21 | 2015-01-27 | Applied Materials, Inc. | Single-body electrostatic chuck |
| CN103021773B (zh) * | 2012-12-31 | 2016-03-16 | 中微半导体设备(上海)有限公司 | 多孔复合陶瓷部件、其制备方法以及等离子体处理腔室 |
| US9358702B2 (en) | 2013-01-18 | 2016-06-07 | Applied Materials, Inc. | Temperature management of aluminium nitride electrostatic chuck |
| US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
| US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
| US9362130B2 (en) | 2013-03-01 | 2016-06-07 | Applied Materials, Inc. | Enhanced etching processes using remote plasma sources |
| US9669653B2 (en) | 2013-03-14 | 2017-06-06 | Applied Materials, Inc. | Electrostatic chuck refurbishment |
| US9887121B2 (en) | 2013-04-26 | 2018-02-06 | Applied Materials, Inc. | Protective cover for electrostatic chuck |
| US9666466B2 (en) | 2013-05-07 | 2017-05-30 | Applied Materials, Inc. | Electrostatic chuck having thermally isolated zones with minimal crosstalk |
| US9708713B2 (en) | 2013-05-24 | 2017-07-18 | Applied Materials, Inc. | Aerosol deposition coating for semiconductor chamber components |
| US9850568B2 (en) | 2013-06-20 | 2017-12-26 | Applied Materials, Inc. | Plasma erosion resistant rare-earth oxide based thin film coatings |
| US9711334B2 (en) * | 2013-07-19 | 2017-07-18 | Applied Materials, Inc. | Ion assisted deposition for rare-earth oxide based thin film coatings on process rings |
| US9583369B2 (en) | 2013-07-20 | 2017-02-28 | Applied Materials, Inc. | Ion assisted deposition for rare-earth oxide based coatings on lids and nozzles |
| US20150079370A1 (en) * | 2013-09-18 | 2015-03-19 | Applied Materials, Inc. | Coating architecture for plasma sprayed chamber components |
| US20150126036A1 (en) * | 2013-11-05 | 2015-05-07 | Tokyo Electron Limited | Controlling etch rate drift and particles during plasma processing |
| US9440886B2 (en) | 2013-11-12 | 2016-09-13 | Applied Materials, Inc. | Rare-earth oxide based monolithic chamber material |
| US9725799B2 (en) | 2013-12-06 | 2017-08-08 | Applied Materials, Inc. | Ion beam sputtering with ion assisted deposition for coatings on chamber components |
| WO2015134135A1 (en) | 2014-03-05 | 2015-09-11 | Applied Materials, Inc. | Critical chamber component surface improvement to reduce chamber particles |
| US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
| US9869013B2 (en) | 2014-04-25 | 2018-01-16 | Applied Materials, Inc. | Ion assisted deposition top coat of rare-earth oxide |
| US10730798B2 (en) * | 2014-05-07 | 2020-08-04 | Applied Materials, Inc. | Slurry plasma spray of plasma resistant ceramic coating |
| US10196728B2 (en) * | 2014-05-16 | 2019-02-05 | Applied Materials, Inc. | Plasma spray coating design using phase and stress control |
| US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
| US9460898B2 (en) | 2014-08-08 | 2016-10-04 | Applied Materials, Inc. | Plasma generation chamber with smooth plasma resistant coating |
| US9890456B2 (en) | 2014-08-21 | 2018-02-13 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
| JP2016065302A (ja) * | 2014-09-17 | 2016-04-28 | 東京エレクトロン株式会社 | プラズマ処理装置用の部品、及び部品の製造方法 |
| US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
| US9355922B2 (en) | 2014-10-14 | 2016-05-31 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
| US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
| KR102182690B1 (ko) * | 2014-11-11 | 2020-11-25 | (주) 코미코 | 플라즈마 처리 장치용 내부재 및 이의 제조 방법 |
| US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
| US10573496B2 (en) | 2014-12-09 | 2020-02-25 | Applied Materials, Inc. | Direct outlet toroidal plasma source |
| US10224210B2 (en) | 2014-12-09 | 2019-03-05 | Applied Materials, Inc. | Plasma processing system with direct outlet toroidal plasma source |
| US11257693B2 (en) | 2015-01-09 | 2022-02-22 | Applied Materials, Inc. | Methods and systems to improve pedestal temperature control |
| US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
| US9728437B2 (en) | 2015-02-03 | 2017-08-08 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
| US9881805B2 (en) | 2015-03-02 | 2018-01-30 | Applied Materials, Inc. | Silicon selective removal |
| US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
| US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
| JP6500681B2 (ja) | 2015-07-31 | 2019-04-17 | 信越化学工業株式会社 | イットリウム系溶射皮膜、及びその製造方法 |
| US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
| US9691645B2 (en) | 2015-08-06 | 2017-06-27 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
| US9349605B1 (en) | 2015-08-07 | 2016-05-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
| US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
| US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
| US10020218B2 (en) | 2015-11-17 | 2018-07-10 | Applied Materials, Inc. | Substrate support assembly with deposited surface features |
| JP6742341B2 (ja) * | 2015-12-28 | 2020-08-19 | 日本イットリウム株式会社 | 成膜用材料 |
| US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
| US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
| US10343920B2 (en) | 2016-03-18 | 2019-07-09 | Asm Ip Holding B.V. | Aligned carbon nanotubes |
| US9999907B2 (en) * | 2016-04-01 | 2018-06-19 | Applied Materials, Inc. | Cleaning process that precipitates yttrium oxy-flouride |
| JP6443380B2 (ja) | 2016-04-12 | 2018-12-26 | 信越化学工業株式会社 | イットリウム系フッ化物溶射皮膜、及び該溶射皮膜を含む耐食性皮膜 |
| US10388492B2 (en) * | 2016-04-14 | 2019-08-20 | Fm Industries, Inc. | Coated semiconductor processing members having chlorine and fluorine plasma erosion resistance and complex oxide coatings therefor |
| US10865475B2 (en) | 2016-04-21 | 2020-12-15 | Asm Ip Holding B.V. | Deposition of metal borides and silicides |
| US10190213B2 (en) | 2016-04-21 | 2019-01-29 | Asm Ip Holding B.V. | Deposition of metal borides |
| US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
| US10522371B2 (en) | 2016-05-19 | 2019-12-31 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
| US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
| US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
| JP6908973B2 (ja) | 2016-06-08 | 2021-07-28 | 三菱重工業株式会社 | 遮熱コーティング、タービン部材、ガスタービン、ならびに遮熱コーティングの製造方法 |
| US9865484B1 (en) | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
| US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
| US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
| KR102459191B1 (ko) * | 2016-07-14 | 2022-10-26 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 서스펜션 플라스마 용사용 슬러리, 희토류산 불화물 용사막의 형성 방법 및 용사 부재 |
| US20180016678A1 (en) | 2016-07-15 | 2018-01-18 | Applied Materials, Inc. | Multi-layer coating with diffusion barrier layer and erosion resistant layer |
| US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
| KR102532607B1 (ko) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 가공 장치 및 그 동작 방법 |
| US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
| US10629473B2 (en) | 2016-09-09 | 2020-04-21 | Applied Materials, Inc. | Footing removal for nitride spacer |
| US10062575B2 (en) | 2016-09-09 | 2018-08-28 | Applied Materials, Inc. | Poly directional etch by oxidation |
| US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
| US9934942B1 (en) | 2016-10-04 | 2018-04-03 | Applied Materials, Inc. | Chamber with flow-through source |
| US10062585B2 (en) | 2016-10-04 | 2018-08-28 | Applied Materials, Inc. | Oxygen compatible plasma source |
| US10062579B2 (en) | 2016-10-07 | 2018-08-28 | Applied Materials, Inc. | Selective SiN lateral recess |
| US9947549B1 (en) | 2016-10-10 | 2018-04-17 | Applied Materials, Inc. | Cobalt-containing material removal |
| US10643826B2 (en) | 2016-10-26 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for thermally calibrating reaction chambers |
| US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
| US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
| US10229833B2 (en) | 2016-11-01 | 2019-03-12 | Asm Ip Holding B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
| US11535550B2 (en) | 2016-11-02 | 2022-12-27 | Morgan Advanced Ceramics, Inc. | Yttrium aluminum silicate glass ceramic coating for semiconductor chamber apparatus |
| US9768034B1 (en) | 2016-11-11 | 2017-09-19 | Applied Materials, Inc. | Removal methods for high aspect ratio structures |
| US10163696B2 (en) | 2016-11-11 | 2018-12-25 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
| US10026621B2 (en) | 2016-11-14 | 2018-07-17 | Applied Materials, Inc. | SiN spacer profile patterning |
| US10242908B2 (en) | 2016-11-14 | 2019-03-26 | Applied Materials, Inc. | Airgap formation with damage-free copper |
| KR102546317B1 (ko) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기체 공급 유닛 및 이를 포함하는 기판 처리 장치 |
| KR102762543B1 (ko) | 2016-12-14 | 2025-02-05 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
| US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
| KR102700194B1 (ko) | 2016-12-19 | 2024-08-28 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
| US10566206B2 (en) | 2016-12-27 | 2020-02-18 | Applied Materials, Inc. | Systems and methods for anisotropic material breakthrough |
| US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
| US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
| US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
| US10403507B2 (en) | 2017-02-03 | 2019-09-03 | Applied Materials, Inc. | Shaped etch profile with oxidation |
| US10043684B1 (en) | 2017-02-06 | 2018-08-07 | Applied Materials, Inc. | Self-limiting atomic thermal etching systems and methods |
| US10319739B2 (en) | 2017-02-08 | 2019-06-11 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
| US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
| KR20170024592A (ko) * | 2017-02-15 | 2017-03-07 | 주식회사 펨빅스 | 가스유로에 균열이 없는 코팅막이 형성되어 있는 가스 샤워헤드 |
| US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
| US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
| US10319649B2 (en) | 2017-04-11 | 2019-06-11 | Applied Materials, Inc. | Optical emission spectroscopy (OES) for remote plasma monitoring |
| KR102457289B1 (ko) | 2017-04-25 | 2022-10-21 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
| US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
| US10892156B2 (en) | 2017-05-08 | 2021-01-12 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
| US20180327892A1 (en) | 2017-05-10 | 2018-11-15 | Applied Materials, Inc. | Metal oxy-flouride films for chamber components |
| US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
| JP7176860B6 (ja) | 2017-05-17 | 2022-12-16 | アプライド マテリアルズ インコーポレイテッド | 前駆体の流れを改善する半導体処理チャンバ |
| US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
| US10497579B2 (en) | 2017-05-31 | 2019-12-03 | Applied Materials, Inc. | Water-free etching methods |
| US10049891B1 (en) | 2017-05-31 | 2018-08-14 | Applied Materials, Inc. | Selective in situ cobalt residue removal |
| US10886123B2 (en) | 2017-06-02 | 2021-01-05 | Asm Ip Holding B.V. | Methods for forming low temperature semiconductor layers and related semiconductor device structures |
| US10920320B2 (en) | 2017-06-16 | 2021-02-16 | Applied Materials, Inc. | Plasma health determination in semiconductor substrate processing reactors |
| US12040200B2 (en) | 2017-06-20 | 2024-07-16 | Asm Ip Holding B.V. | Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus |
| US10541246B2 (en) | 2017-06-26 | 2020-01-21 | Applied Materials, Inc. | 3D flash memory cells which discourage cross-cell electrical tunneling |
| US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
| US10727080B2 (en) | 2017-07-07 | 2020-07-28 | Applied Materials, Inc. | Tantalum-containing material removal |
| US10541184B2 (en) | 2017-07-11 | 2020-01-21 | Applied Materials, Inc. | Optical emission spectroscopic techniques for monitoring etching |
| US10354889B2 (en) | 2017-07-17 | 2019-07-16 | Applied Materials, Inc. | Non-halogen etching of silicon-containing materials |
| KR20190009245A (ko) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물 |
| US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
| US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
| US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
| US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
| US10170336B1 (en) | 2017-08-04 | 2019-01-01 | Applied Materials, Inc. | Methods for anisotropic control of selective silicon removal |
| TWI815813B (zh) | 2017-08-04 | 2023-09-21 | 荷蘭商Asm智慧財產控股公司 | 用於分配反應腔內氣體的噴頭總成 |
| US10043674B1 (en) | 2017-08-04 | 2018-08-07 | Applied Materials, Inc. | Germanium etching systems and methods |
| US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
| US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
| US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
| US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
| US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
| US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
| KR102491945B1 (ko) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
| US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
| KR102401446B1 (ko) | 2017-08-31 | 2022-05-24 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| KR102630301B1 (ko) | 2017-09-21 | 2024-01-29 | 에이에스엠 아이피 홀딩 비.브이. | 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치 |
| US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
| US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
| US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
| US10283324B1 (en) | 2017-10-24 | 2019-05-07 | Applied Materials, Inc. | Oxygen treatment for nitride etching |
| US10128086B1 (en) | 2017-10-24 | 2018-11-13 | Applied Materials, Inc. | Silicon pretreatment for nitride removal |
| US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
| US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
| US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
| KR102633318B1 (ko) | 2017-11-27 | 2024-02-05 | 에이에스엠 아이피 홀딩 비.브이. | 청정 소형 구역을 포함한 장치 |
| CN111316417B (zh) | 2017-11-27 | 2023-12-22 | 阿斯莫Ip控股公司 | 与批式炉偕同使用的用于储存晶圆匣的储存装置 |
| US10134569B1 (en) * | 2017-11-28 | 2018-11-20 | Lam Research Corporation | Method and apparatus for real-time monitoring of plasma chamber wall condition |
| US10256112B1 (en) | 2017-12-08 | 2019-04-09 | Applied Materials, Inc. | Selective tungsten removal |
| CN109920715A (zh) * | 2017-12-12 | 2019-06-21 | 中微半导体设备(上海)股份有限公司 | 一种等离子体刻蚀反应器 |
| KR102395660B1 (ko) * | 2017-12-19 | 2022-05-10 | (주)코미코 | 용사 재료 및 그 용사 재료로 제조된 용사 피막 |
| US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
| US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
| US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
| US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
| TWI799494B (zh) | 2018-01-19 | 2023-04-21 | 荷蘭商Asm 智慧財產控股公司 | 沈積方法 |
| KR102695659B1 (ko) | 2018-01-19 | 2024-08-14 | 에이에스엠 아이피 홀딩 비.브이. | 플라즈마 보조 증착에 의해 갭 충진 층을 증착하는 방법 |
| US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
| USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
| US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
| US11685991B2 (en) | 2018-02-14 | 2023-06-27 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
| US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
| US10679870B2 (en) | 2018-02-15 | 2020-06-09 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
| US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
| US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
| KR102636427B1 (ko) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 장치 |
| US11047035B2 (en) | 2018-02-23 | 2021-06-29 | Applied Materials, Inc. | Protective yttria coating for semiconductor equipment parts |
| US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
| TWI766433B (zh) | 2018-02-28 | 2022-06-01 | 美商應用材料股份有限公司 | 形成氣隙的系統及方法 |
| US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
| US10593560B2 (en) | 2018-03-01 | 2020-03-17 | Applied Materials, Inc. | Magnetic induction plasma source for semiconductor processes and equipment |
| US11014853B2 (en) | 2018-03-07 | 2021-05-25 | Applied Materials, Inc. | Y2O3—ZrO2 erosion resistant material for chamber components in plasma environments |
| US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
| US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
| US10497573B2 (en) | 2018-03-13 | 2019-12-03 | Applied Materials, Inc. | Selective atomic layer etching of semiconductor materials |
| US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
| JP7169077B2 (ja) | 2018-03-26 | 2022-11-10 | 三菱重工業株式会社 | 遮熱コーティング、タービン部材、ガスタービン及び遮熱コーティングの製造方法 |
| KR102646467B1 (ko) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조 |
| US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
| KR102501472B1 (ko) | 2018-03-30 | 2023-02-20 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 |
| US10573527B2 (en) | 2018-04-06 | 2020-02-25 | Applied Materials, Inc. | Gas-phase selective etching systems and methods |
| KR102600229B1 (ko) | 2018-04-09 | 2023-11-10 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 장치, 이를 포함하는 기판 처리 장치 및 기판 처리 방법 |
| US10490406B2 (en) | 2018-04-10 | 2019-11-26 | Appled Materials, Inc. | Systems and methods for material breakthrough |
| US10699879B2 (en) | 2018-04-17 | 2020-06-30 | Applied Materials, Inc. | Two piece electrode assembly with gap for plasma control |
| US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
| KR102709511B1 (ko) | 2018-05-08 | 2024-09-24 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 산화물 막을 주기적 증착 공정에 의해 증착하기 위한 방법 및 관련 소자 구조 |
| US12025484B2 (en) | 2018-05-08 | 2024-07-02 | Asm Ip Holding B.V. | Thin film forming method |
| US12272527B2 (en) | 2018-05-09 | 2025-04-08 | Asm Ip Holding B.V. | Apparatus for use with hydrogen radicals and method of using same |
| KR20190129718A (ko) | 2018-05-11 | 2019-11-20 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 피도핑 금속 탄화물 막을 형성하는 방법 및 관련 반도체 소자 구조 |
| KR102596988B1 (ko) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 그에 의해 제조된 장치 |
| US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
| TWI840362B (zh) | 2018-06-04 | 2024-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 水氣降低的晶圓處置腔室 |
| US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
| US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
| KR102568797B1 (ko) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 시스템 |
| CN120591748A (zh) | 2018-06-27 | 2025-09-05 | Asm Ip私人控股有限公司 | 用于形成含金属的材料的循环沉积方法及膜和结构 |
| US11492703B2 (en) | 2018-06-27 | 2022-11-08 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
| US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
| KR102686758B1 (ko) | 2018-06-29 | 2024-07-18 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
| US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
| US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
| US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
| US10755941B2 (en) | 2018-07-06 | 2020-08-25 | Applied Materials, Inc. | Self-limiting selective etching systems and methods |
| US10767789B2 (en) | 2018-07-16 | 2020-09-08 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
| US11667575B2 (en) | 2018-07-18 | 2023-06-06 | Applied Materials, Inc. | Erosion resistant metal oxide coatings |
| US10672642B2 (en) | 2018-07-24 | 2020-06-02 | Applied Materials, Inc. | Systems and methods for pedestal configuration |
| US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
| US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
| JP6939853B2 (ja) * | 2018-08-15 | 2021-09-22 | 信越化学工業株式会社 | 溶射皮膜、溶射皮膜の製造方法、及び溶射部材 |
| US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
| US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
| US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| KR102707956B1 (ko) | 2018-09-11 | 2024-09-19 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
| US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
| US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
| US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
| US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
| US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
| CN110970344B (zh) | 2018-10-01 | 2024-10-25 | Asmip控股有限公司 | 衬底保持设备、包含所述设备的系统及其使用方法 |
| US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| KR102592699B1 (ko) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치 |
| US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
| JP6699701B2 (ja) * | 2018-10-16 | 2020-05-27 | 信越化学工業株式会社 | イットリウム系フッ化物溶射皮膜、該溶射皮膜を形成するための溶射材料、該溶射皮膜の形成方法、及び該溶射皮膜を含む耐食性皮膜 |
| KR102546322B1 (ko) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
| KR102605121B1 (ko) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
| US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
| USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
| US12378665B2 (en) | 2018-10-26 | 2025-08-05 | Asm Ip Holding B.V. | High temperature coatings for a preclean and etch apparatus and related methods |
| US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
| KR102748291B1 (ko) | 2018-11-02 | 2024-12-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 기판 처리 장치 |
| US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
| US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
| US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
| US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
| US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
| US12040199B2 (en) | 2018-11-28 | 2024-07-16 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
| US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
| KR102636428B1 (ko) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치를 세정하는 방법 |
| US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
| JP7504584B2 (ja) | 2018-12-14 | 2024-06-24 | エーエスエム・アイピー・ホールディング・ベー・フェー | 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム |
| US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
| US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
| TWI866480B (zh) | 2019-01-17 | 2024-12-11 | 荷蘭商Asm Ip 私人控股有限公司 | 藉由循環沈積製程於基板上形成含過渡金屬膜之方法 |
| KR102727227B1 (ko) | 2019-01-22 | 2024-11-07 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| CN111524788B (zh) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | 氧化硅的拓扑选择性膜形成的方法 |
| TWI873122B (zh) | 2019-02-20 | 2025-02-21 | 荷蘭商Asm Ip私人控股有限公司 | 填充一基板之一表面內所形成的一凹槽的方法、根據其所形成之半導體結構、及半導體處理設備 |
| US11482533B2 (en) | 2019-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Apparatus and methods for plug fill deposition in 3-D NAND applications |
| JP7509548B2 (ja) | 2019-02-20 | 2024-07-02 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材表面内に形成された凹部を充填するための周期的堆積方法および装置 |
| KR102626263B1 (ko) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치 |
| TWI842826B (zh) | 2019-02-22 | 2024-05-21 | 荷蘭商Asm Ip私人控股有限公司 | 基材處理設備及處理基材之方法 |
| KR102782593B1 (ko) | 2019-03-08 | 2025-03-14 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 층을 포함한 구조체 및 이의 형성 방법 |
| KR102858005B1 (ko) | 2019-03-08 | 2025-09-09 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체 |
| US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
| KR20200116033A (ko) | 2019-03-28 | 2020-10-08 | 에이에스엠 아이피 홀딩 비.브이. | 도어 개방기 및 이를 구비한 기판 처리 장치 |
| KR102809999B1 (ko) | 2019-04-01 | 2025-05-19 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자를 제조하는 방법 |
| US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
| KR20200125453A (ko) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 기상 반응기 시스템 및 이를 사용하는 방법 |
| KR102929471B1 (ko) | 2019-05-07 | 2026-02-20 | 에이에스엠 아이피 홀딩 비.브이. | 딥 튜브가 있는 화학물질 공급원 용기 |
| KR102869364B1 (ko) | 2019-05-07 | 2025-10-10 | 에이에스엠 아이피 홀딩 비.브이. | 비정질 탄소 중합체 막을 개질하는 방법 |
| KR102929472B1 (ko) | 2019-05-10 | 2026-02-20 | 에이에스엠 아이피 홀딩 비.브이. | 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조 |
| JP7598201B2 (ja) | 2019-05-16 | 2024-12-11 | エーエスエム・アイピー・ホールディング・ベー・フェー | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
| JP7612342B2 (ja) | 2019-05-16 | 2025-01-14 | エーエスエム・アイピー・ホールディング・ベー・フェー | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
| USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
| USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
| USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
| USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
| KR20200141002A (ko) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법 |
| KR102918757B1 (ko) | 2019-06-10 | 2026-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 석영 에피택셜 챔버를 세정하는 방법 |
| KR20200143254A (ko) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조 |
| USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
| USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
| KR102911421B1 (ko) | 2019-07-03 | 2026-01-12 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법 |
| JP7499079B2 (ja) | 2019-07-09 | 2024-06-13 | エーエスエム・アイピー・ホールディング・ベー・フェー | 同軸導波管を用いたプラズマ装置、基板処理方法 |
| CN112216646B (zh) | 2019-07-10 | 2026-02-10 | Asmip私人控股有限公司 | 基板支撑组件及包括其的基板处理装置 |
| KR102895115B1 (ko) | 2019-07-16 | 2025-12-03 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| KR102860110B1 (ko) | 2019-07-17 | 2025-09-16 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 게르마늄 구조를 형성하는 방법 |
| TWI826704B (zh) | 2019-07-17 | 2023-12-21 | 荷蘭商Asm Ip私人控股有限公司 | 自由基輔助引燃電漿系統和方法 |
| US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
| TWI839544B (zh) | 2019-07-19 | 2024-04-21 | 荷蘭商Asm Ip私人控股有限公司 | 形成形貌受控的非晶碳聚合物膜之方法 |
| KR102903090B1 (ko) | 2019-07-19 | 2025-12-19 | 에이에스엠 아이피 홀딩 비.브이. | 토폴로지-제어된 비정질 탄소 중합체 막을 형성하는 방법 |
| CN112309843B (zh) | 2019-07-29 | 2026-01-23 | Asmip私人控股有限公司 | 实现高掺杂剂掺入的选择性沉积方法 |
| US12169361B2 (en) | 2019-07-30 | 2024-12-17 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| CN112309899B (zh) | 2019-07-30 | 2025-11-14 | Asmip私人控股有限公司 | 基板处理设备 |
| CN112309900B (zh) | 2019-07-30 | 2025-11-04 | Asmip私人控股有限公司 | 基板处理设备 |
| US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| CN112323048B (zh) | 2019-08-05 | 2024-02-09 | Asm Ip私人控股有限公司 | 用于化学源容器的液位传感器 |
| KR20210018761A (ko) | 2019-08-09 | 2021-02-18 | 에이에스엠 아이피 홀딩 비.브이. | 냉각 장치를 포함한 히터 어셈블리 및 이를 사용하는 방법 |
| USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
| USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
| JP7810514B2 (ja) | 2019-08-21 | 2026-02-03 | エーエスエム・アイピー・ホールディング・ベー・フェー | 成膜原料混合ガス生成装置及び成膜装置 |
| KR20210024423A (ko) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 홀을 구비한 구조체를 형성하기 위한 방법 |
| USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
| USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
| USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
| USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
| KR102928101B1 (ko) | 2019-08-23 | 2026-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법 |
| US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
| KR102868968B1 (ko) | 2019-09-03 | 2025-10-10 | 에이에스엠 아이피 홀딩 비.브이. | 칼코지나이드 막 및 상기 막을 포함한 구조체를 증착하기 위한 방법 및 장치 |
| KR102806450B1 (ko) | 2019-09-04 | 2025-05-12 | 에이에스엠 아이피 홀딩 비.브이. | 희생 캡핑 층을 이용한 선택적 증착 방법 |
| KR102733104B1 (ko) | 2019-09-05 | 2024-11-22 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| US12469693B2 (en) | 2019-09-17 | 2025-11-11 | Asm Ip Holding B.V. | Method of forming a carbon-containing layer and structure including the layer |
| US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
| CN112593212B (zh) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法 |
| TWI846953B (zh) | 2019-10-08 | 2024-07-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理裝置 |
| TW202128273A (zh) | 2019-10-08 | 2021-08-01 | 荷蘭商Asm Ip私人控股有限公司 | 氣體注入系統、及將材料沉積於反應室內之基板表面上的方法 |
| KR102948143B1 (ko) | 2019-10-08 | 2026-04-07 | 에이에스엠 아이피 홀딩 비.브이. | 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법 |
| TWI846966B (zh) | 2019-10-10 | 2024-07-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成光阻底層之方法及包括光阻底層之結構 |
| US12009241B2 (en) | 2019-10-14 | 2024-06-11 | Asm Ip Holding B.V. | Vertical batch furnace assembly with detector to detect cassette |
| TWI834919B (zh) | 2019-10-16 | 2024-03-11 | 荷蘭商Asm Ip私人控股有限公司 | 氧化矽之拓撲選擇性膜形成之方法 |
| US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
| KR102845724B1 (ko) | 2019-10-21 | 2025-08-13 | 에이에스엠 아이피 홀딩 비.브이. | 막을 선택적으로 에칭하기 위한 장치 및 방법 |
| KR20210050453A (ko) | 2019-10-25 | 2021-05-07 | 에이에스엠 아이피 홀딩 비.브이. | 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
| US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
| KR102890638B1 (ko) | 2019-11-05 | 2025-11-25 | 에이에스엠 아이피 홀딩 비.브이. | 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템 |
| US11613624B2 (en) * | 2019-11-07 | 2023-03-28 | The Boeing Company | Ceramic coated iron particles and methods for making ceramic coated particles |
| US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
| KR102861314B1 (ko) | 2019-11-20 | 2025-09-17 | 에이에스엠 아이피 홀딩 비.브이. | 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템 |
| CN112951697B (zh) | 2019-11-26 | 2025-07-29 | Asmip私人控股有限公司 | 基板处理设备 |
| US11450529B2 (en) | 2019-11-26 | 2022-09-20 | Asm Ip Holding B.V. | Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
| CN120432376A (zh) | 2019-11-29 | 2025-08-05 | Asm Ip私人控股有限公司 | 基板处理设备 |
| CN112885692B (zh) | 2019-11-29 | 2025-08-15 | Asmip私人控股有限公司 | 基板处理设备 |
| JP7527928B2 (ja) | 2019-12-02 | 2024-08-05 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基板処理装置、基板処理方法 |
| KR20210070898A (ko) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| US11885013B2 (en) | 2019-12-17 | 2024-01-30 | Asm Ip Holding B.V. | Method of forming vanadium nitride layer and structure including the vanadium nitride layer |
| US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
| KR20210089077A (ko) | 2020-01-06 | 2021-07-15 | 에이에스엠 아이피 홀딩 비.브이. | 가스 공급 어셈블리, 이의 구성 요소, 및 이를 포함하는 반응기 시스템 |
| TWI887322B (zh) | 2020-01-06 | 2025-06-21 | 荷蘭商Asm Ip私人控股有限公司 | 反應器系統、抬升銷、及處理方法 |
| US11993847B2 (en) | 2020-01-08 | 2024-05-28 | Asm Ip Holding B.V. | Injector |
| KR102882467B1 (ko) | 2020-01-16 | 2025-11-05 | 에이에스엠 아이피 홀딩 비.브이. | 고 종횡비 피처를 형성하는 방법 |
| KR102675856B1 (ko) | 2020-01-20 | 2024-06-17 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 및 박막 표면 개질 방법 |
| TWI889744B (zh) | 2020-01-29 | 2025-07-11 | 荷蘭商Asm Ip私人控股有限公司 | 污染物捕集系統、及擋板堆疊 |
| TW202513845A (zh) | 2020-02-03 | 2025-04-01 | 荷蘭商Asm Ip私人控股有限公司 | 半導體裝置結構及其形成方法 |
| TWI908758B (zh) | 2020-02-04 | 2025-12-21 | 荷蘭商Asm Ip私人控股有限公司 | 驗證一物品之方法、用於驗證一物品之設備、及用於驗證一反應室之系統 |
| US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
| KR20210103953A (ko) | 2020-02-13 | 2021-08-24 | 에이에스엠 아이피 홀딩 비.브이. | 가스 분배 어셈블리 및 이를 사용하는 방법 |
| KR102916725B1 (ko) | 2020-02-13 | 2026-01-23 | 에이에스엠 아이피 홀딩 비.브이. | 수광 장치를 포함하는 기판 처리 장치 및 수광 장치의 교정 방법 |
| US11781243B2 (en) | 2020-02-17 | 2023-10-10 | Asm Ip Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
| TWI895326B (zh) | 2020-02-28 | 2025-09-01 | 荷蘭商Asm Ip私人控股有限公司 | 專用於零件清潔的系統 |
| KR102943116B1 (ko) | 2020-03-04 | 2026-03-23 | 에이에스엠 아이피 홀딩 비.브이. | 반응기 시스템용 정렬 고정구 |
| KR20210116240A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 조절성 접합부를 갖는 기판 핸들링 장치 |
| US11876356B2 (en) | 2020-03-11 | 2024-01-16 | Asm Ip Holding B.V. | Lockout tagout assembly and system and method of using same |
| CN113394086A (zh) | 2020-03-12 | 2021-09-14 | Asm Ip私人控股有限公司 | 用于制造具有目标拓扑轮廓的层结构的方法 |
| US12173404B2 (en) | 2020-03-17 | 2024-12-24 | Asm Ip Holding B.V. | Method of depositing epitaxial material, structure formed using the method, and system for performing the method |
| KR102290498B1 (ko) | 2020-03-30 | 2021-08-17 | (주)도 은 | 렌즈 코팅용 옥시불화이트륨을 함유하는 저굴절 물질 및 그의 제조방법 |
| KR102755229B1 (ko) | 2020-04-02 | 2025-01-14 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 |
| TWI887376B (zh) | 2020-04-03 | 2025-06-21 | 荷蘭商Asm Ip私人控股有限公司 | 半導體裝置的製造方法 |
| TWI888525B (zh) | 2020-04-08 | 2025-07-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於選擇性蝕刻氧化矽膜之設備及方法 |
| US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
| KR20210128343A (ko) | 2020-04-15 | 2021-10-26 | 에이에스엠 아이피 홀딩 비.브이. | 크롬 나이트라이드 층을 형성하는 방법 및 크롬 나이트라이드 층을 포함하는 구조 |
| US11996289B2 (en) | 2020-04-16 | 2024-05-28 | Asm Ip Holding B.V. | Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods |
| TW202143328A (zh) | 2020-04-21 | 2021-11-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於調整膜應力之方法 |
| KR102866804B1 (ko) | 2020-04-24 | 2025-09-30 | 에이에스엠 아이피 홀딩 비.브이. | 냉각 가스 공급부를 포함한 수직형 배치 퍼니스 어셈블리 |
| KR20210132600A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템 |
| KR20210132612A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐 화합물들을 안정화하기 위한 방법들 및 장치 |
| CN113555279A (zh) | 2020-04-24 | 2021-10-26 | Asm Ip私人控股有限公司 | 形成含氮化钒的层的方法及包含其的结构 |
| KR102934380B1 (ko) | 2020-04-24 | 2026-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐 보라이드 및 바나듐 포스파이드 층을 포함한 구조체를 형성하는 방법 |
| KR102783898B1 (ko) | 2020-04-29 | 2025-03-18 | 에이에스엠 아이피 홀딩 비.브이. | 고체 소스 전구체 용기 |
| KR20210134869A (ko) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Foup 핸들러를 이용한 foup의 빠른 교환 |
| JP7726664B2 (ja) | 2020-05-04 | 2025-08-20 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基板を処理するための基板処理システム |
| JP7736446B2 (ja) | 2020-05-07 | 2025-09-09 | エーエスエム・アイピー・ホールディング・ベー・フェー | 同調回路を備える反応器システム |
| KR102788543B1 (ko) | 2020-05-13 | 2025-03-27 | 에이에스엠 아이피 홀딩 비.브이. | 반응기 시스템용 레이저 정렬 고정구 |
| KR102936676B1 (ko) | 2020-05-15 | 2026-03-10 | 에이에스엠 아이피 홀딩 비.브이. | 다중 전구체를 사용하여 실리콘 게르마늄 균일도를 제어하기 위한 방법 |
| TWI911214B (zh) | 2020-05-19 | 2026-01-11 | 荷蘭商Asm Ip私人控股有限公司 | 基材處理設備 |
| KR20210145079A (ko) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | 기판을 처리하기 위한 플랜지 및 장치 |
| KR102795476B1 (ko) | 2020-05-21 | 2025-04-11 | 에이에스엠 아이피 홀딩 비.브이. | 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법 |
| KR102702526B1 (ko) | 2020-05-22 | 2024-09-03 | 에이에스엠 아이피 홀딩 비.브이. | 과산화수소를 사용하여 박막을 증착하기 위한 장치 |
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Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5102496A (en) * | 1989-09-26 | 1992-04-07 | Applied Materials, Inc. | Particulate contamination prevention using low power plasma |
| US5413877A (en) * | 1992-09-22 | 1995-05-09 | Moller International, Inc. | Combination thermal barrier and wear coating for internal combustion engines |
| JPH07122500A (ja) * | 1993-10-28 | 1995-05-12 | Fujitsu Ltd | ガス機器及びこれを利用したガス供給装置 |
| US5798016A (en) * | 1994-03-08 | 1998-08-25 | International Business Machines Corporation | Apparatus for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve process stability |
| US6143432A (en) * | 1998-01-09 | 2000-11-07 | L. Pierre deRochemont | Ceramic composites with improved interfacial properties and methods to make such composites |
| BR9713354A (pt) * | 1996-11-13 | 2000-01-25 | Doerken Ewald Ag | Processo para aplicação de um revestimento inorgânico sobre um corpo eletricamente condutor |
| US6170429B1 (en) * | 1998-09-30 | 2001-01-09 | Lam Research Corporation | Chamber liner for semiconductor process chambers |
| JP3510993B2 (ja) * | 1999-12-10 | 2004-03-29 | トーカロ株式会社 | プラズマ処理容器内部材およびその製造方法 |
| KR20010062209A (ko) * | 1999-12-10 | 2001-07-07 | 히가시 데쓰로 | 고내식성 막이 내부에 형성된 챔버를 구비하는 처리 장치 |
| US6521046B2 (en) * | 2000-02-04 | 2003-02-18 | Kabushiki Kaisha Kobe Seiko Sho | Chamber material made of Al alloy and heater block |
| TW503449B (en) * | 2000-04-18 | 2002-09-21 | Ngk Insulators Ltd | Halogen gas plasma-resistive members and method for producing the same, laminates, and corrosion-resistant members |
| JP4277973B2 (ja) * | 2001-07-19 | 2009-06-10 | 日本碍子株式会社 | イットリア−アルミナ複合酸化物膜の製造方法、イットリア−アルミナ複合酸化物膜および耐蝕性部材 |
| US20030029563A1 (en) * | 2001-08-10 | 2003-02-13 | Applied Materials, Inc. | Corrosion resistant coating for semiconductor processing chamber |
| TWI262905B (en) * | 2001-11-13 | 2006-10-01 | Tosoh Corp | Quartz glass parts, ceramic parts and process of producing those |
| US6942929B2 (en) * | 2002-01-08 | 2005-09-13 | Nianci Han | Process chamber having component with yttrium-aluminum coating |
| US6884514B2 (en) * | 2002-01-11 | 2005-04-26 | Saint-Gobain Ceramics & Plastics, Inc. | Method for forming ceramic layer having garnet crystal structure phase and article made thereby |
| US6776873B1 (en) * | 2002-02-14 | 2004-08-17 | Jennifer Y Sun | Yttrium oxide based surface coating for semiconductor IC processing vacuum chambers |
| US8067067B2 (en) * | 2002-02-14 | 2011-11-29 | Applied Materials, Inc. | Clean, dense yttrium oxide coating protecting semiconductor processing apparatus |
| US6565984B1 (en) * | 2002-05-28 | 2003-05-20 | Applied Materials Inc. | Clean aluminum alloy for semiconductor processing equipment |
| US7311797B2 (en) * | 2002-06-27 | 2007-12-25 | Lam Research Corporation | Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor |
| JP2004332081A (ja) * | 2003-05-12 | 2004-11-25 | Shin Etsu Chem Co Ltd | 耐プラズマ部材及びその製造方法 |
| DE60313042T2 (de) * | 2003-09-16 | 2008-01-03 | Shin-Etsu Quartz Products Co., Ltd. | Element für eine plasmaätzeinrichtung und verfahren zu dessen herstellung |
| JP4051351B2 (ja) * | 2004-03-12 | 2008-02-20 | トーカロ株式会社 | 熱放射性および耐損傷性に優れるy2o3溶射皮膜被覆部材およびその製造方法 |
| JP5137304B2 (ja) * | 2004-10-18 | 2013-02-06 | 株式会社日本セラテック | 耐食性部材およびその製造方法 |
| WO2007013184A1 (ja) * | 2005-07-29 | 2007-02-01 | Tocalo Co., Ltd. | Y2o3溶射皮膜被覆部材およびその製造方法 |
| JP4571561B2 (ja) * | 2005-09-08 | 2010-10-27 | トーカロ株式会社 | 耐プラズマエロージョン性に優れる溶射皮膜被覆部材およびその製造方法 |
| KR20070087219A (ko) * | 2007-07-25 | 2007-08-27 | 도카로 가부시키가이샤 | 산화이트륨 용사 피막 피복 부재 및 그 제조 방법 |
-
2008
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- 2009-02-13 KR KR1020107020779A patent/KR20100118994A/ko not_active Ceased
- 2009-02-25 TW TW98106006A patent/TWI455820B/zh active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10734202B2 (en) | 2013-06-05 | 2020-08-04 | Applied Materials, Inc. | Rare-earth oxide based erosion resistant coatings for semiconductor application |
| US11773479B2 (en) | 2014-04-25 | 2023-10-03 | Applied Materials, Inc. | Plasma erosion resistant thin film coating for high temperature application |
| US12492464B2 (en) | 2016-05-03 | 2025-12-09 | Applied Materials, Inc. | Protective metal oxy-fluoride coatings |
Also Published As
| Publication number | Publication date |
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| CN102084020B (zh) | 2014-07-09 |
| SG10201710059XA (en) | 2018-01-30 |
| JP5674479B2 (ja) | 2015-02-25 |
| TW200946331A (en) | 2009-11-16 |
| US20090214825A1 (en) | 2009-08-27 |
| SG187415A1 (en) | 2013-02-28 |
| KR20100118994A (ko) | 2010-11-08 |
| CN102084020A (zh) | 2011-06-01 |
| TWI455820B (zh) | 2014-10-11 |
| WO2009108275A3 (en) | 2009-11-05 |
| JP2011514933A (ja) | 2011-05-12 |
| WO2009108275A9 (en) | 2011-02-03 |
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