WO2008099869A1 - 光酸発生剤用化合物及びそれを用いたレジスト組成物、パターン形成方法 - Google Patents

光酸発生剤用化合物及びそれを用いたレジスト組成物、パターン形成方法 Download PDF

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Publication number
WO2008099869A1
WO2008099869A1 PCT/JP2008/052410 JP2008052410W WO2008099869A1 WO 2008099869 A1 WO2008099869 A1 WO 2008099869A1 JP 2008052410 W JP2008052410 W JP 2008052410W WO 2008099869 A1 WO2008099869 A1 WO 2008099869A1
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WO
WIPO (PCT)
Prior art keywords
resist composition
pattern
compound
same
forming method
Prior art date
Application number
PCT/JP2008/052410
Other languages
English (en)
French (fr)
Inventor
Yuji Hagiwara
Jonathan Joachim Jodry
Satoru Narizuka
Kazuhiko Maeda
Original Assignee
Central Glass Company, Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Central Glass Company, Limited filed Critical Central Glass Company, Limited
Priority to KR1020097018822A priority Critical patent/KR101277395B1/ko
Priority to US12/527,362 priority patent/US8435717B2/en
Priority to CN200880012078.8A priority patent/CN101687781B/zh
Publication of WO2008099869A1 publication Critical patent/WO2008099869A1/ja
Priority to US13/744,013 priority patent/US20130130175A1/en

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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/003—Esters of saturated alcohols having the esterified hydroxy group bound to an acyclic carbon atom
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/01—Sulfonic acids
    • C07C309/02—Sulfonic acids having sulfo groups bound to acyclic carbon atoms
    • C07C309/03—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
    • C07C309/07—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton
    • C07C309/12—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/01—Sulfonic acids
    • C07C309/25—Sulfonic acids having sulfo groups bound to carbon atoms of rings other than six-membered aromatic rings of a carbon skeleton
    • C07C309/27—Sulfonic acids having sulfo groups bound to carbon atoms of rings other than six-membered aromatic rings of a carbon skeleton containing carboxyl groups bound to the carbon skeleton
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12—Sulfonium compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/74—Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a ring other than a six-membered aromatic ring
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
    • C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
    • C08F20/10—Esters
    • C08F20/22—Esters containing halogen
    • C08F20/24—Esters containing halogen containing perhaloalkyl radicals
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2603/00—Systems containing at least three condensed rings
    • C07C2603/56—Ring systems containing bridged rings
    • C07C2603/58—Ring systems containing bridged rings containing three rings
    • C07C2603/70—Ring systems containing bridged rings containing three rings containing only six-membered rings
    • C07C2603/74—Adamantanes

Abstract

下記式（１）で表されるスルホン酸オニウム塩はレジスト組成物用の優れた感放射線性酸発生剤として使用できる。このスルホン酸オニウム塩を含有するレジスト組成物を用いることによって、良好なパターンを形成できる。 【化６４】 式（１）において、Ｒ1は１価の有機基、Ｑ+はスルホニウムカチオンまたはヨードニウムカチオンを表す。
PCT/JP2008/052410 2007-02-15 2008-02-14 光酸発生剤用化合物及びそれを用いたレジスト組成物、パターン形成方法 WO2008099869A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020097018822A KR101277395B1 (ko) 2007-02-15 2008-02-14 광산발생제용 화합물 및 이를 사용한 레지스트 조성물, 패턴 형성방법
US12/527,362 US8435717B2 (en) 2007-02-15 2008-02-14 Compound for photoacid generator, resist composition using the same, and pattern-forming method
CN200880012078.8A CN101687781B (zh) 2007-02-15 2008-02-14 光产酸剂用化合物以及使用它的抗蚀剂组合物、图案形成方法
US13/744,013 US20130130175A1 (en) 2007-02-15 2013-01-17 Compound for Photoacid Generator, Resist Composition Using the Same, and Pattern-Forming Method

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP2007034834 2007-02-15
JP2007-034834 2007-02-15
JP2007066236 2007-03-15
JP2007-066236 2007-03-15
JP2007-143880 2007-05-30
JP2007143880 2007-05-30
JP2007143879 2007-05-30
JP2007-143879 2007-05-30

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13/744,013 Continuation US20130130175A1 (en) 2007-02-15 2013-01-17 Compound for Photoacid Generator, Resist Composition Using the Same, and Pattern-Forming Method

Publications (1)

Publication Number Publication Date
WO2008099869A1 true WO2008099869A1 (ja) 2008-08-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/052410 WO2008099869A1 (ja) 2007-02-15 2008-02-14 光酸発生剤用化合物及びそれを用いたレジスト組成物、パターン形成方法

Country Status (5)

Country Link
US (2) US8435717B2 (ja)
JP (2) JP5401800B2 (ja)
KR (2) KR20110133065A (ja)
CN (1) CN101687781B (ja)
WO (1) WO2008099869A1 (ja)

Cited By (48)

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GB2452806A (en) * 2007-07-25 2009-03-18 Sumitomo Chemical Co Adamantyl-substituted sulfonate salts useful in chemically amplified resist compositions
WO2009037981A1 (ja) * 2007-09-18 2009-03-26 Central Glass Company, Limited ２－（アルキルカルボニルオキシ）－１，１－ジフルオロエタンスルホン酸塩類およびその製造方法
WO2009037980A1 (ja) * 2007-09-18 2009-03-26 Central Glass Company, Limited ２－ブロモ－２，２－ジフルオロエタノール及び２－（アルキルカルボニルオキシ）－１，１－ジフルオロエタンスルホン酸塩類の製造方法
EP2073060A1 (en) * 2007-12-21 2009-06-24 Tokyo Ohka Kogyo Co., Ltd. Novel compound and method of producing the same, acid generator, resist composition and method of forming resist pattern
JP2009169205A (ja) * 2008-01-18 2009-07-30 Shin Etsu Chem Co Ltd ポジ型レジスト材料及びパターン形成方法
JP2009169228A (ja) * 2008-01-18 2009-07-30 Shin Etsu Chem Co Ltd ポジ型レジスト材料及びパターン形成方法
SG157293A1 (en) * 2008-05-21 2009-12-29 Korea Kumho Petrochem Co Ltd Acid generating agent for chemically amplified resist compositions
JP2010060953A (ja) * 2008-09-05 2010-03-18 Shin-Etsu Chemical Co Ltd ポジ型レジスト材料及びパターン形成方法
JP2010060952A (ja) * 2008-09-05 2010-03-18 Shin-Etsu Chemical Co Ltd ポジ型レジスト材料及びパターン形成方法
CN101687741A (zh) * 2007-09-18 2010-03-31 中央硝子株式会社 2-（烷基羰氧基）-1,1-二氟乙烷磺酸盐类及其制造方法
JP2010077377A (ja) * 2008-09-23 2010-04-08 Korea Kumho Petrochem Co Ltd オニウム塩化合物、それを含む高分子化合物、前記高分子化合物を含む化学増幅型レジスト組成物、および前記組成物を用いたパターン形成方法
JP2010084134A (ja) * 2008-09-30 2010-04-15 Korea Kumho Petrochem Co Ltd レジスト用重合体およびこれを用いて製造されたレジスト組成物
US20100119970A1 (en) * 2008-11-07 2010-05-13 Shin-Etsu Chemical Co., Ltd. Resist lower-layer composition containing thermal acid generator, resist lower layer film-formed substrate, and patterning process
SG161145A1 (en) * 2008-10-30 2010-05-27 Korea Kumho Petrochem Co Ltd Photoacid generator containing aromatic ring
JP2010132560A (ja) * 2007-11-01 2010-06-17 Central Glass Co Ltd 新規スルホン酸塩及びその誘導体、光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法
CN101799629A (zh) * 2009-02-06 2010-08-11 住友化学株式会社 化学放大型光致抗蚀剂组合物和形成图案的方法
WO2010104177A1 (ja) * 2009-03-12 2010-09-16 セントラル硝子株式会社 フルオロアルカンスルホン酸アンモニウム塩類およびその製造方法
US20100285405A1 (en) * 2009-05-07 2010-11-11 Jsr Corporation Radiation-sensitive resin composition
CN101921219A (zh) * 2009-06-12 2010-12-22 住友化学株式会社 盐以及含有该盐的光致抗蚀剂组合物
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JP2012108496A (ja) * 2010-10-27 2012-06-07 Central Glass Co Ltd 含フッ素スルホン酸塩類、光酸発生剤、レジスト組成物及びそれを用いたパターン形成方法
US8211616B2 (en) * 2008-07-18 2012-07-03 Tokyo Ohka Kogyo Co., Ltd. Positive resist composition and method of forming resist pattern
KR101219989B1 (ko) * 2008-12-04 2013-01-08 금호석유화학 주식회사 광산발생제, 공중합체, 화학증폭형 레지스트 조성물 및 화학증폭형 레지스트 조성물을 이용한 패턴 형성 방법
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US8652753B2 (en) 2011-07-19 2014-02-18 Sumitomo Chemical Company, Limited Resist composition and method for producing resist pattern
US9429841B2 (en) 2011-07-19 2016-08-30 Sumitomo Chemical Company, Limited Resist composition and method for producing resist pattern
US8652754B2 (en) 2011-07-19 2014-02-18 Sumitomo Chemical Company, Limited Resist composition and method for producing resist pattern

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KR20090110935A (ko) 2009-10-23
US8435717B2 (en) 2013-05-07
JP5401800B2 (ja) 2014-01-29
JP2009007327A (ja) 2009-01-15
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US20100035185A1 (en) 2010-02-11
US20130130175A1 (en) 2013-05-23

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