WO2008117696A1 - ２層積層膜およびこれを用いたパターン形成方法、並びに２層積層膜の下層形成用樹脂組成物および上層形成用ポジ型感放射線性樹脂組成物 - Google Patents

２層積層膜およびこれを用いたパターン形成方法、並びに２層積層膜の下層形成用樹脂組成物および上層形成用ポジ型感放射線性樹脂組成物 Download PDF

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Publication number
WO2008117696A1
WO2008117696A1 PCT/JP2008/054926 JP2008054926W WO2008117696A1 WO 2008117696 A1 WO2008117696 A1 WO 2008117696A1 JP 2008054926 W JP2008054926 W JP 2008054926W WO 2008117696 A1 WO2008117696 A1 WO 2008117696A1
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WO
WIPO (PCT)
Prior art keywords
double
layered film
resin composition
forming
layer
Prior art date
Application number
PCT/JP2008/054926
Other languages
English (en)
French (fr)
Inventor
Kousuke Mori
Masaru Ohta
Original Assignee
Jsr Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr Corporation filed Critical Jsr Corporation
Publication of WO2008117696A1 publication Critical patent/WO2008117696A1/ja

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Structural Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Architecture (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

　本発明は、基板表面にバリのない製膜層を容易に形成することができるレジスト膜等を提供することを目的としている。 　本発明に係る２層積層膜は、（Ａ）下記一般式（１）で表される構造単位を有する重合体および（Ｃ）溶剤を含有する樹脂組成物１から得られる下層(レジスト層[Ｉ])と、 　（Ｄ）フェノール性水酸基を有する重合体、（Ｅ）キノンジアジド基含有化合物および（Ｇ）溶剤を含有するポジ型感放射線性樹脂組成物２から得られる上層(レジスト層[II])とからなることを特徴としている。
PCT/JP2008/054926 2007-03-28 2008-03-18 ２層積層膜およびこれを用いたパターン形成方法、並びに２層積層膜の下層形成用樹脂組成物および上層形成用ポジ型感放射線性樹脂組成物 WO2008117696A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-085066 2007-03-28
JP2007085066A JP4899986B2 (ja) 2007-03-28 2007-03-28 ２層積層膜およびこれを用いたパターン形成方法

Publications (1)

Publication Number Publication Date
WO2008117696A1 true WO2008117696A1 (ja) 2008-10-02

Family

ID=39788432

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/054926 WO2008117696A1 (ja) 2007-03-28 2008-03-18 ２層積層膜およびこれを用いたパターン形成方法、並びに２層積層膜の下層形成用樹脂組成物および上層形成用ポジ型感放射線性樹脂組成物

Country Status (3)

Country Link
JP (1) JP4899986B2 (ja)
TW (1) TW200905402A (ja)
WO (1) WO2008117696A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016060137A1 (ja) * 2014-10-14 2016-04-21 太陽インキ製造株式会社 積層構造体

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101941712B1 (ko) 2012-06-05 2019-01-24 리쿠아비스타 비.브이. 전기습윤 표시 장치 및 이의 제조 방법
JP6147995B2 (ja) * 2012-11-26 2017-06-14 東京応化工業株式会社 メッキ造形物の形成方法
US10330999B2 (en) 2014-09-22 2019-06-25 Samsung Display Co., Ltd. Display panel and method of manufacturing the same
KR102360093B1 (ko) * 2015-07-22 2022-02-09 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법
KR102313365B1 (ko) * 2015-08-25 2021-10-18 삼성디스플레이 주식회사 유기 발광 표시 장치의 제조 방법
US10243175B2 (en) 2016-02-02 2019-03-26 Samsung Display Co., Ltd. Organic light-emitting apparatus fabricated using a fluoropolymer and method of manufacturing the same
JP7338482B2 (ja) * 2020-01-14 2023-09-05 住友電気工業株式会社 半導体装置の製造方法
CN112652522B (zh) * 2020-07-23 2022-05-03 腾讯科技（深圳）有限公司 光刻胶结构、图形化沉积层和半导体芯片及其制作方法
JP7066038B1 (ja) 2021-12-10 2022-05-12 ナガセケムテックス株式会社 樹脂組成物、及び、パターンレジスト膜付き基板の製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005010779A (ja) * 2003-06-20 2005-01-13 Samsung Electronics Co Ltd ディスプレイパネル駆動システムの高効率電源供給装置及びその設計方法
JP2005266795A (ja) * 2004-02-20 2005-09-29 Jsr Corp バンプ形成用樹脂組成物、バンプ形成用二層積層膜、およびバンプ形成方法
JP2005316471A (ja) * 2004-04-27 2005-11-10 Agfa Gevaert Nv ネガ作用性感熱性平版印刷版前駆体
WO2005111724A1 (ja) * 2004-05-14 2005-11-24 Nissan Chemical Industries, Ltd. ビニルエーテル化合物を含む反射防止膜形成組成物
JP2007052351A (ja) * 2005-08-19 2007-03-01 Jsr Corp バンプ形成用樹脂組成物、バンプ形成用二層積層膜、およびバンプ形成方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005010779A (ja) * 2003-06-20 2005-01-13 Samsung Electronics Co Ltd ディスプレイパネル駆動システムの高効率電源供給装置及びその設計方法
JP2005266795A (ja) * 2004-02-20 2005-09-29 Jsr Corp バンプ形成用樹脂組成物、バンプ形成用二層積層膜、およびバンプ形成方法
JP2005316471A (ja) * 2004-04-27 2005-11-10 Agfa Gevaert Nv ネガ作用性感熱性平版印刷版前駆体
WO2005111724A1 (ja) * 2004-05-14 2005-11-24 Nissan Chemical Industries, Ltd. ビニルエーテル化合物を含む反射防止膜形成組成物
JP2007052351A (ja) * 2005-08-19 2007-03-01 Jsr Corp バンプ形成用樹脂組成物、バンプ形成用二層積層膜、およびバンプ形成方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016060137A1 (ja) * 2014-10-14 2016-04-21 太陽インキ製造株式会社 積層構造体
JPWO2016060137A1 (ja) * 2014-10-14 2017-06-08 太陽インキ製造株式会社 積層構造体

Also Published As

Publication number Publication date
JP4899986B2 (ja) 2012-03-21
TW200905402A (en) 2009-02-01
JP2008242247A (ja) 2008-10-09

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