WO2009063808A1 - ポジ型感光性樹脂組成物、レジストパターンの製造方法、半導体装置及び電子デバイス - Google Patents

ポジ型感光性樹脂組成物、レジストパターンの製造方法、半導体装置及び電子デバイス Download PDF

Info

Publication number
WO2009063808A1
WO2009063808A1 PCT/JP2008/070323 JP2008070323W WO2009063808A1 WO 2009063808 A1 WO2009063808 A1 WO 2009063808A1 JP 2008070323 W JP2008070323 W JP 2008070323W WO 2009063808 A1 WO2009063808 A1 WO 2009063808A1
Authority
WO
WIPO (PCT)
Prior art keywords
positive
resin composition
photosensitive resin
type photosensitive
resist pattern
Prior art date
Application number
PCT/JP2008/070323
Other languages
English (en)
French (fr)
Inventor
Hiroshi Matsutani
Takumi Ueno
Alexandre Nicolas
Ken Nanaumi
Original Assignee
Hitachi Chemical Company, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Company, Ltd. filed Critical Hitachi Chemical Company, Ltd.
Priority to CN2008801158049A priority Critical patent/CN101855596B/zh
Priority to US12/741,854 priority patent/US9786576B2/en
Priority to EP08848939.8A priority patent/EP2221666B1/en
Priority to JP2009541116A priority patent/JP4770985B2/ja
Publication of WO2009063808A1 publication Critical patent/WO2009063808A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05005—Structure
    • H01L2224/05008—Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body, e.g.
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/0502—Disposition
    • H01L2224/05022—Disposition the internal layer being at least partially embedded in the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/0502—Disposition
    • H01L2224/05024—Disposition the internal layer being disposed on a redistribution layer on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05124—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05571—Disposition the external layer being disposed in a recess of the surface
    • H01L2224/05572—Disposition the external layer being disposed in a recess of the surface the external layer extending out of an opening
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/1012—Auxiliary members for bump connectors, e.g. spacers
    • H01L2224/10122—Auxiliary members for bump connectors, e.g. spacers being formed on the semiconductor or solid-state body to be connected
    • H01L2224/10125—Reinforcing structures
    • H01L2224/10126—Bump collar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/1302—Disposition
    • H01L2224/13022—Disposition the bump connector being at least partially embedded in the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

　本発明のポジ型感光性樹脂組成物は、（Ａ）炭素数４～１００の不飽和炭化水素基を有する化合物で変性されたフェノール樹脂、（Ｂ）光により酸を生成する化合物、（Ｃ）熱架橋剤及び（Ｄ）溶剤を含有する。本発明のポジ型感光性樹脂組成物は、アルカリ水溶液で現像可能であり、十分に高い感度及び解像度で、密着性に優れ、良好な耐熱衝撃性を有するレジストパターンを形成することができるという効果を有する。
PCT/JP2008/070323 2007-11-12 2008-11-07 ポジ型感光性樹脂組成物、レジストパターンの製造方法、半導体装置及び電子デバイス WO2009063808A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN2008801158049A CN101855596B (zh) 2007-11-12 2008-11-07 正型感光性树脂组合物、抗蚀图形的制法、半导体装置及电子设备
US12/741,854 US9786576B2 (en) 2007-11-12 2008-11-07 Positive-type photosensitive resin composition, method for production of resist pattern, semiconductor device, and electronic device
EP08848939.8A EP2221666B1 (en) 2007-11-12 2008-11-07 Positive-type photosensitive resin composition, method for production of resist pattern, and semiconductor device
JP2009541116A JP4770985B2 (ja) 2007-11-12 2008-11-07 ポジ型感光性樹脂組成物、レジストパターンの製造方法、半導体装置及び電子デバイス

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007293631 2007-11-12
JP2007-293631 2007-11-12

Publications (1)

Publication Number Publication Date
WO2009063808A1 true WO2009063808A1 (ja) 2009-05-22

Family

ID=40638659

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/070323 WO2009063808A1 (ja) 2007-11-12 2008-11-07 ポジ型感光性樹脂組成物、レジストパターンの製造方法、半導体装置及び電子デバイス

Country Status (8)

Country Link
US (1) US9786576B2 (ja)
EP (1) EP2221666B1 (ja)
JP (1) JP4770985B2 (ja)
KR (1) KR101210060B1 (ja)
CN (1) CN101855596B (ja)
PT (1) PT2221666E (ja)
TW (1) TWI396043B (ja)
WO (1) WO2009063808A1 (ja)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009230124A (ja) * 2008-02-25 2009-10-08 Hitachi Chem Co Ltd ポジ型感光性樹脂組成物、レジストパターンの製造方法及び電子部品
WO2010026988A1 (ja) * 2008-09-04 2010-03-11 日立化成工業株式会社 ポジ型感光性樹脂組成物、レジストパターンの製造方法及び電子部品
JP2011013488A (ja) * 2009-07-02 2011-01-20 Taiyo Holdings Co Ltd 光硬化性熱硬化性樹脂組成物、そのドライフィルム及び硬化物並びにそれらを用いたプリント配線板
CN102870045A (zh) * 2010-04-28 2013-01-09 Jsr株式会社 喷出喷嘴式涂布法用正型射线敏感性组合物、显示元件用层间绝缘膜及其形成方法
JP2013228416A (ja) * 2012-04-24 2013-11-07 Hitachi Chemical Co Ltd ポジ型感光性樹脂組成物及びこれを用いた感光性フィルム
WO2013187209A1 (ja) * 2012-06-12 2013-12-19 株式会社Adeka 感光性組成物
CN104865797A (zh) * 2014-02-24 2015-08-26 日立化成株式会社 感光性树脂组合物、使用其的感光性元件、抗蚀图形的形成方法及触摸面板的制造方法
JP2015179718A (ja) * 2014-03-19 2015-10-08 東京エレクトロン株式会社 基板処理方法、基板処理装置及び記録媒体
JP2016170245A (ja) * 2015-03-12 2016-09-23 日立化成株式会社 ポジ型感光性樹脂組成物、感光性エレメント、及びレジストパターンを形成する方法
JP2017111455A (ja) * 2011-12-09 2017-06-22 旭化成株式会社 感光性樹脂組成物、硬化レリーフパターンの製造方法、半導体装置及び表示体装置
CN107367903A (zh) * 2010-12-16 2017-11-21 日立化成株式会社 感光性元件、抗蚀图案的形成方法以及印刷布线板的制造方法

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9177926B2 (en) 2011-12-30 2015-11-03 Deca Technologies Inc Semiconductor device and method comprising thickened redistribution layers
US10373870B2 (en) 2010-02-16 2019-08-06 Deca Technologies Inc. Semiconductor device and method of packaging
US8922021B2 (en) 2011-12-30 2014-12-30 Deca Technologies Inc. Die up fully molded fan-out wafer level packaging
US9576919B2 (en) 2011-12-30 2017-02-21 Deca Technologies Inc. Semiconductor device and method comprising redistribution layers
KR101841794B1 (ko) * 2010-09-16 2018-03-23 히타치가세이가부시끼가이샤 포지티브형 감광성 수지 조성물, 레지스트 패턴의 제조 방법 및 전자 부품
TWI405040B (zh) * 2010-10-01 2013-08-11 Chi Mei Corp A positive-type photosensitive resin composition, and a method of forming a pattern
US10050004B2 (en) 2015-11-20 2018-08-14 Deca Technologies Inc. Fully molded peripheral package on package device
US9831170B2 (en) 2011-12-30 2017-11-28 Deca Technologies, Inc. Fully molded miniaturized semiconductor module
US9613830B2 (en) 2011-12-30 2017-04-04 Deca Technologies Inc. Fully molded peripheral package on package device
WO2013102146A1 (en) 2011-12-30 2013-07-04 Deca Technologies, Inc. Die up fully molded fan-out wafer level packaging
US10672624B2 (en) 2011-12-30 2020-06-02 Deca Technologies Inc. Method of making fully molded peripheral package on package device
KR102015682B1 (ko) * 2012-02-07 2019-08-28 히타치가세이가부시끼가이샤 감광성 수지 조성물, 패턴 경화막의 제조 방법 및 전자 부품
WO2014023392A1 (en) * 2012-08-09 2014-02-13 dedeMERCK PATENT GMBH Organic semiconducting formulation
KR101582548B1 (ko) * 2012-11-21 2016-01-05 해성디에스 주식회사 인터포져 제조 방법 및 이를 이용한 반도체 패키지 제조 방법
JP6455008B2 (ja) * 2013-08-29 2019-01-23 日鉄ケミカル＆マテリアル株式会社 ゲート絶縁膜、有機薄膜トランジスタ、及び有機薄膜トランジスタの製造方法
US9519221B2 (en) 2014-01-13 2016-12-13 Applied Materials, Inc. Method for microwave processing of photosensitive polyimides
JPWO2016010067A1 (ja) * 2014-07-18 2017-04-27 積水化学工業株式会社 半導体素子保護用材料及び半導体装置
KR102157641B1 (ko) 2015-03-06 2020-09-18 동우 화인켐 주식회사 화학증폭형 감광성 수지 조성물 및 이로부터 제조된 절연막
CN107407879B (zh) * 2015-03-27 2020-10-16 东丽株式会社 感光性树脂组合物、感光性片材、半导体器件及半导体器件的制造方法
KR20170033022A (ko) 2015-09-16 2017-03-24 동우 화인켐 주식회사 포지티브형 감광성 수지 조성물 및 이로부터 제조된 절연막
KR101895910B1 (ko) * 2016-01-19 2018-09-07 삼성에스디아이 주식회사 감광성 수지 조성물, 감광성 수지막 및 이를 포함하는 컬러필터
KR102539889B1 (ko) 2016-08-11 2023-06-05 동우 화인켐 주식회사 화학증폭형 감광성 수지 조성물 및 이로부터 제조된 절연막
KR102425708B1 (ko) * 2017-05-10 2022-07-28 쇼와덴코머티리얼즈가부시끼가이샤 포지티브형 감광성 수지 조성물, 포지티브형 감광성 수지용 열가교제, 패턴 경화막 및 그의 제조 방법, 반도체 소자, 그리고 전자 디바이스
KR102417180B1 (ko) * 2017-09-29 2022-07-05 삼성전자주식회사 Duv용 포토레지스트 조성물, 패턴 형성 방법 및 반도체 소자의 제조 방법
JP6691203B1 (ja) * 2018-12-26 2020-04-28 東京応化工業株式会社 化学増幅型ポジ型感光性樹脂組成物、感光性ドライフィルム、感光性ドライフィルムの製造方法、パターン化されたレジスト膜の製造方法、鋳型付き基板の製造方法及びめっき造形物の製造方法
US11056453B2 (en) 2019-06-18 2021-07-06 Deca Technologies Usa, Inc. Stackable fully molded semiconductor structure with vertical interconnects
CN110718486B (zh) * 2019-10-17 2022-10-04 沈阳硅基科技有限公司 一种薄膜转移方法

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49115541A (ja) 1973-02-22 1974-11-05
JPS59108031A (ja) 1982-12-13 1984-06-22 Ube Ind Ltd 感光性ポリイミド
JPH07306532A (ja) * 1994-05-12 1995-11-21 Fuji Photo Film Co Ltd ポジ型感放射線性樹脂組成物
JPH0996904A (ja) * 1995-09-29 1997-04-08 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物
JPH10171112A (ja) * 1996-12-11 1998-06-26 Mitsubishi Chem Corp ポジ型感光性組成物
JP2001019799A (ja) * 1999-05-31 2001-01-23 Samsung Electronics Co Ltd 熱架橋型光酸発生剤およびこれを用いたフォトレジスト
JP2004002753A (ja) 2002-03-28 2004-01-08 Toray Ind Inc 樹脂組成物及びそれよりなる絶縁膜、半導体装置、及び有機電界発光素子
WO2004006020A1 (en) 2002-07-03 2004-01-15 Sumitomo Bakelite Company, Ltd. Photosensitive compositions based on polycyclic polymers
JP2004190008A (ja) 2002-11-08 2004-07-08 Toray Ind Inc 樹脂組成物とそれを用いた絶縁膜、半導体装置及び有機電界発光素子
JP2006106214A (ja) 2004-10-01 2006-04-20 Sumitomo Bakelite Co Ltd 平坦化樹脂層、並びにそれを有する半導体装置及び表示体装置
JP3812654B2 (ja) 2002-01-23 2006-08-23 Ｊｓｒ株式会社 ポジ型感光性絶縁樹脂組成物およびその硬化物
JP2007316577A (ja) * 2006-04-26 2007-12-06 Hitachi Chem Co Ltd 感光性樹脂組成物及び感光性エレメント

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5657816A (en) * 1979-10-18 1981-05-20 Sumitomo Chem Co Ltd Preparation of phenolic resin modified by liquid polybutadiene
US4587196A (en) * 1981-06-22 1986-05-06 Philip A. Hunt Chemical Corporation Positive photoresist with cresol-formaldehyde novolak resin and photosensitive naphthoquinone diazide
EP0087262A1 (en) 1982-02-22 1983-08-31 Minnesota Mining And Manufacturing Company Positive acting photosensitive compositions
JPS60208377A (ja) 1984-04-02 1985-10-19 Asahi Kagaku Kenkyusho:Kk ソルダ−レジストインキ用樹脂組成物
CN85104885B (zh) * 1985-06-22 1988-02-24 上海交通大学 印刷感光胶的制造方法
JPH0654390B2 (ja) 1986-07-18 1994-07-20 東京応化工業株式会社 高耐熱性ポジ型ホトレジスト組成物
US6462107B1 (en) * 1997-12-23 2002-10-08 The Texas A&M University System Photoimageable compositions and films for printed wiring board manufacture
TWI228639B (en) * 2000-11-15 2005-03-01 Vantico Ag Positive type photosensitive epoxy resin composition and printed circuit board using the same
US20050014086A1 (en) 2001-06-20 2005-01-20 Eswaran Sambasivan Venkat "High ortho" novolak copolymers and composition thereof
CN100336137C (zh) * 2002-01-28 2007-09-05 捷时雅株式会社 形成电介体的光敏组合物以及利用该组合物的电介体
JP2004177683A (ja) 2002-11-27 2004-06-24 Clariant (Japan) Kk 超高耐熱ポジ型感光性組成物を用いたパターン形成方法
JP2007217657A (ja) * 2006-01-23 2007-08-30 Toyo Ink Mfg Co Ltd 硬化性樹脂組成物およびその製造方法

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49115541A (ja) 1973-02-22 1974-11-05
JPS59108031A (ja) 1982-12-13 1984-06-22 Ube Ind Ltd 感光性ポリイミド
JPH07306532A (ja) * 1994-05-12 1995-11-21 Fuji Photo Film Co Ltd ポジ型感放射線性樹脂組成物
JPH0996904A (ja) * 1995-09-29 1997-04-08 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物
JPH10171112A (ja) * 1996-12-11 1998-06-26 Mitsubishi Chem Corp ポジ型感光性組成物
JP2001019799A (ja) * 1999-05-31 2001-01-23 Samsung Electronics Co Ltd 熱架橋型光酸発生剤およびこれを用いたフォトレジスト
JP3812654B2 (ja) 2002-01-23 2006-08-23 Ｊｓｒ株式会社 ポジ型感光性絶縁樹脂組成物およびその硬化物
JP2004002753A (ja) 2002-03-28 2004-01-08 Toray Ind Inc 樹脂組成物及びそれよりなる絶縁膜、半導体装置、及び有機電界発光素子
WO2004006020A1 (en) 2002-07-03 2004-01-15 Sumitomo Bakelite Company, Ltd. Photosensitive compositions based on polycyclic polymers
JP2004190008A (ja) 2002-11-08 2004-07-08 Toray Ind Inc 樹脂組成物とそれを用いた絶縁膜、半導体装置及び有機電界発光素子
JP2006106214A (ja) 2004-10-01 2006-04-20 Sumitomo Bakelite Co Ltd 平坦化樹脂層、並びにそれを有する半導体装置及び表示体装置
JP2007316577A (ja) * 2006-04-26 2007-12-06 Hitachi Chem Co Ltd 感光性樹脂組成物及び感光性エレメント

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
J. PHOTOPOLYM. SCI. TECHNOL., vol. 18, 2005, pages 321 - 325
J. PHOTOPOLYM. SCI. TECHNOL., vol. 18, 2005, pages 327 - 332
See also references of EP2221666A4 *

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009230124A (ja) * 2008-02-25 2009-10-08 Hitachi Chem Co Ltd ポジ型感光性樹脂組成物、レジストパターンの製造方法及び電子部品
WO2010026988A1 (ja) * 2008-09-04 2010-03-11 日立化成工業株式会社 ポジ型感光性樹脂組成物、レジストパターンの製造方法及び電子部品
EP2328027A1 (en) * 2008-09-04 2011-06-01 Hitachi Chemical Company, Ltd. Positive-type photosensitive resin composition, method for producing resist pattern, and electronic component
EP2328027A4 (en) * 2008-09-04 2012-08-29 Hitachi Chemical Co Ltd PHOTOSENSITIVE RESIN COMPOSITION OF THE POSITIVE TYPE, METHOD OF MANUFACTURING A RESIST PATTERN, AND ELECTRONIC COMPONENT
US8426985B2 (en) 2008-09-04 2013-04-23 Hitachi Chemical Company, Ltd. Positive-type photosensitive resin composition, method for producing resist pattern, and electronic component
JP5447384B2 (ja) * 2008-09-04 2014-03-19 日立化成株式会社 ポジ型感光性樹脂組成物、レジストパターンの製造方法及び電子部品
JP2011013488A (ja) * 2009-07-02 2011-01-20 Taiyo Holdings Co Ltd 光硬化性熱硬化性樹脂組成物、そのドライフィルム及び硬化物並びにそれらを用いたプリント配線板
CN102870045A (zh) * 2010-04-28 2013-01-09 Jsr株式会社 喷出喷嘴式涂布法用正型射线敏感性组合物、显示元件用层间绝缘膜及其形成方法
CN102870045B (zh) * 2010-04-28 2014-11-19 Jsr株式会社 喷出喷嘴式涂布法用正型射线敏感性组合物、显示元件用层间绝缘膜及其形成方法
CN107367903A (zh) * 2010-12-16 2017-11-21 日立化成株式会社 感光性元件、抗蚀图案的形成方法以及印刷布线板的制造方法
JP2017111455A (ja) * 2011-12-09 2017-06-22 旭化成株式会社 感光性樹脂組成物、硬化レリーフパターンの製造方法、半導体装置及び表示体装置
JP2013228416A (ja) * 2012-04-24 2013-11-07 Hitachi Chemical Co Ltd ポジ型感光性樹脂組成物及びこれを用いた感光性フィルム
WO2013187209A1 (ja) * 2012-06-12 2013-12-19 株式会社Adeka 感光性組成物
JPWO2013187209A1 (ja) * 2012-06-12 2016-02-04 株式会社Adeka 感光性組成物
JP2015172743A (ja) * 2014-02-24 2015-10-01 日立化成株式会社 感光性樹脂組成物及びこれを用いた感光性エレメント
CN104865797A (zh) * 2014-02-24 2015-08-26 日立化成株式会社 感光性树脂组合物、使用其的感光性元件、抗蚀图形的形成方法及触摸面板的制造方法
JP2015179718A (ja) * 2014-03-19 2015-10-08 東京エレクトロン株式会社 基板処理方法、基板処理装置及び記録媒体
JP2016170245A (ja) * 2015-03-12 2016-09-23 日立化成株式会社 ポジ型感光性樹脂組成物、感光性エレメント、及びレジストパターンを形成する方法

Also Published As

Publication number Publication date
TWI396043B (zh) 2013-05-11
CN101855596A (zh) 2010-10-06
CN101855596B (zh) 2013-05-22
JP4770985B2 (ja) 2011-09-14
KR20100049687A (ko) 2010-05-12
TW200942966A (en) 2009-10-16
US20110250396A1 (en) 2011-10-13
KR101210060B1 (ko) 2012-12-07
EP2221666A1 (en) 2010-08-25
US9786576B2 (en) 2017-10-10
EP2221666A4 (en) 2011-02-02
JPWO2009063808A1 (ja) 2011-03-31
EP2221666B1 (en) 2013-09-18
PT2221666E (pt) 2013-10-31

Similar Documents

Publication Publication Date Title
WO2009063808A1 (ja) ポジ型感光性樹脂組成物、レジストパターンの製造方法、半導体装置及び電子デバイス
EP2372457A4 (en) POSITIVE LIGHT-SENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING A RESISTANCE STRUCTURE, SEMICONDUCTOR ELEMENT AND ELECTRONIC COMPONENT
ATE496977T1 (de) Deckschichtzusammensetzung, alkali- entwicklerlösliche deckschichtfolie mit der zusammensetzung und musterbildungsverfahren mit hilfe damit
ATE532100T1 (de) Chemisch verstärkte positive resistzusammensetzung und strukturierungsverfahren damit
WO2009057638A1 (ja) ポジ型感光性樹脂組成物、パターンの製造方法及び電子部品
EP1729176A4 (en) POSITIVELY WORKING RADIATION-SENSITIVE RESIN COMPOSITION
TW200732842A (en) Positive resist composition and pattern forming method using the same
WO2008117696A1 (ja) ２層積層膜およびこれを用いたパターン形成方法、並びに２層積層膜の下層形成用樹脂組成物および上層形成用ポジ型感放射線性樹脂組成物
TW200604251A (en) Positive photosensitive resin composition, method for producing patterns and electronic parts
EP1845132A3 (en) Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method
TW200606589A (en) Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same
TW200728921A (en) Positive resist composition and pattern formation method using the positive resist composition
EP3537217A3 (en) Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition
EP2345933A4 (en) POSITIVE PHOTOSENSITIVE RESIN COMPOSITION FOR SPRAY COATING AND PROCESS FOR PRODUCING THROUGH ELECTRODE USING THE SAME
JP2021073528A (ja) リソグラフィー用下層膜形成材料、リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜及びその製造方法、パターン形成方法、樹脂、並びに精製方法
TW201129576A (en) Radiation-sensitive resin composition, polymer, monomer and method for producing radiation-sensitive resin composition
TW200712777A (en) Positive photosensitive resin composition, uses thereof, and method for forming positive pattern
TW200619850A (en) Resist composition and resist pattern forming method
WO2009038126A1 (ja) 分岐型ポリヒドロキシスチレンを含むレジスト下層膜形成組成物
EP1750176A3 (en) Positive-type radiation-sensitive resin composition for producing a metal-plating formed material, transcription film and production method of a metal-plating formed material
TW200739256A (en) Photosensitive resin composition
BRPI0408070A (pt) resinas fenólicas de resina colofÈnia e usos relacionados a estas
TW200736838A (en) Substrate, method for producing the same, and patterning process using the same
WO2009014113A1 (ja) スプレー塗布用ポジ型感光性樹脂組成物、それを用いた硬化膜の形成方法、硬化膜および半導体装置
TWI713753B (zh) 層合體之製造方法、層合體，及接著劑組成物

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880115804.9

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08848939

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2009541116

Country of ref document: JP

ENP Entry into the national phase

Ref document number: 20107007272

Country of ref document: KR

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2008848939

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 12741854

Country of ref document: US