WO2008084786A1 - 化合物及び感放射線性組成物 - Google Patents

化合物及び感放射線性組成物 Download PDF

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Publication number
WO2008084786A1
WO2008084786A1 PCT/JP2008/050083 JP2008050083W WO2008084786A1 WO 2008084786 A1 WO2008084786 A1 WO 2008084786A1 JP 2008050083 W JP2008050083 W JP 2008050083W WO 2008084786 A1 WO2008084786 A1 WO 2008084786A1
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WO
WIPO (PCT)
Prior art keywords
radiation
sensitive composition
compound
forming
sensitive
Prior art date
Application number
PCT/JP2008/050083
Other languages
English (en)
French (fr)
Inventor
Daisuke Shimizu
Ken Maruyama
Toshiyuki Kai
Tsutomu Shimokawa
Original Assignee
Jsr Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr Corporation filed Critical Jsr Corporation
Priority to EP08710532A priority Critical patent/EP2100870A4/en
Priority to US12/519,519 priority patent/US8173351B2/en
Priority to KR1020097014039A priority patent/KR101431295B1/ko
Priority to JP2008553094A priority patent/JP5277966B2/ja
Publication of WO2008084786A1 publication Critical patent/WO2008084786A1/ja

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C39/00—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring
    • C07C39/12—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring polycyclic with no unsaturation outside the aromatic rings
    • C07C39/17—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring polycyclic with no unsaturation outside the aromatic rings containing other rings in addition to the six-membered aromatic rings, e.g. cyclohexylphenol
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C43/00—Ethers; Compounds having groups, groups or groups
    • C07C43/02—Ethers
    • C07C43/20—Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring
    • C07C43/23—Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring containing hydroxy or O-metal groups
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/66—Esters of carboxylic acids having esterified carboxylic groups bound to acyclic carbon atoms and having any of the groups OH, O—metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety
    • C07C69/67—Esters of carboxylic acids having esterified carboxylic groups bound to acyclic carbon atoms and having any of the groups OH, O—metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety of saturated acids
    • C07C69/708—Ethers
    • C07C69/712—Ethers the hydroxy group of the ester being etherified with a hydroxy compound having the hydroxy group bound to a carbon atom of a six-membered aromatic ring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/115—Cationic or anionic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/12—Nitrogen compound containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Materials For Photolithography (AREA)

Abstract

　電子線等に有効に感応し、低ラフネス等に優れ、微細パターンを高精度かつ安定して形成可能なレジスト膜を成膜できる感放射線性組成物の材料である化合物であり、下記一般式（１）で表される化合物。
PCT/JP2008/050083 2007-01-09 2008-01-08 化合物及び感放射線性組成物 WO2008084786A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP08710532A EP2100870A4 (en) 2007-01-09 2008-01-08 COMPOUND AND COMPOSITION SENSITIVE TO RADIATION
US12/519,519 US8173351B2 (en) 2007-01-09 2008-01-08 Compound and radiation-sensitive composition
KR1020097014039A KR101431295B1 (ko) 2007-01-09 2008-01-08 화합물 및 감방사선성 조성물
JP2008553094A JP5277966B2 (ja) 2007-01-09 2008-01-08 化合物及び感放射線性組成物

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2007001561 2007-01-09
JP2007-001561 2007-01-09
JP2007054464 2007-03-05
JP2007-054464 2007-03-05
JP2007209882 2007-08-10
JP2007-209882 2007-08-10

Publications (1)

Publication Number Publication Date
WO2008084786A1 true WO2008084786A1 (ja) 2008-07-17

Family

ID=39608676

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/050083 WO2008084786A1 (ja) 2007-01-09 2008-01-08 化合物及び感放射線性組成物

Country Status (6)

Country Link
US (1) US8173351B2 (ja)
EP (1) EP2100870A4 (ja)
JP (1) JP5277966B2 (ja)
KR (1) KR101431295B1 (ja)
TW (1) TWI432408B (ja)
WO (1) WO2008084786A1 (ja)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009022540A1 (ja) * 2007-08-13 2009-02-19 Jsr Corporation 化合物及び感放射線性組成物
JP2009196904A (ja) * 2008-02-19 2009-09-03 Jsr Corp 環状化合物及びその製造方法
JP2010128432A (ja) * 2008-12-01 2010-06-10 Jsr Corp 感放射線性組成物
JP2010134246A (ja) * 2008-12-05 2010-06-17 Jsr Corp レジストパターン形成方法及びリンス液
JP2010159244A (ja) * 2008-12-09 2010-07-22 Jsr Corp アレーン系化合物の製造方法及びアレーン系化合物
WO2011013842A1 (en) * 2009-07-31 2011-02-03 Fujifilm Corporation Actinic ray-sensitive or radiation-sensitive composition and pattern forming method using the same
JP2011053369A (ja) * 2009-08-31 2011-03-17 Jsr Corp ネガ型感放射線性樹脂組成物
JP2011053359A (ja) * 2009-08-31 2011-03-17 Jsr Corp ネガ型感放射線性樹脂組成物
JP2011053622A (ja) * 2009-09-04 2011-03-17 Fujifilm Corp 感活性光線性または感放射線性組成物およびそれを用いたパターン形成方法
JP2011231074A (ja) * 2010-04-28 2011-11-17 Jsr Corp カリックスアレーン系化合物及びその製造方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5266299B2 (ja) * 2010-12-01 2013-08-21 信越化学工業株式会社 レジスト下層膜材料及びこれを用いたパターン形成方法
JP5485185B2 (ja) * 2011-01-05 2014-05-07 信越化学工業株式会社 レジスト下層膜材料及びこれを用いたパターン形成方法
JP6886113B2 (ja) 2015-12-01 2021-06-16 Jsr株式会社 感放射線性組成物、パターン形成方法及び感放射線性酸発生剤

Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05188598A (ja) 1991-06-28 1993-07-30 Internatl Business Mach Corp <Ibm> 表面反射防止コーティングフィルム
JPH0612452B2 (ja) 1982-09-30 1994-02-16 ブリュ−ワ−・サイエンス・インコ−ポレイテッド 集積回路素子の製造方法
JPH07134413A (ja) 1993-03-23 1995-05-23 At & T Corp フラーレン含有レジスト材料を用いたデバイス作製プロセス
JPH09211862A (ja) 1996-01-31 1997-08-15 Agency Of Ind Science & Technol パターン形成材料及びパターン形成方法
JPH09236919A (ja) 1996-02-28 1997-09-09 Nec Corp 超微細パタン形成方法及び超微細エッチング方法
JPH10282649A (ja) 1996-06-07 1998-10-23 Nippon Telegr & Teleph Corp <Ntt> レジスト組成物及びその製造方法
JPH1129612A (ja) 1997-07-11 1999-02-02 Res Dev Corp Of Japan 末端に非共有電子対を有する官能基を導入した高分子化合物、その製造方法及び該高分子化合物を使用したポジ型レジスト材料
JPH1172916A (ja) 1997-08-28 1999-03-16 Nec Corp 微細パターンおよびその形成方法
JPH11143074A (ja) 1997-09-22 1999-05-28 Univ Birmingham 電子線レジスト
JPH11258796A (ja) 1998-03-11 1999-09-24 Agency Of Ind Science & Technol 電子線レジスト、レジストパターンの形成方法及び微細パターンの形成方法
JPH11322656A (ja) 1998-05-11 1999-11-24 Jsr Corp 新規なカリックスアレーン誘導体およびカリックスレゾルシナレーン誘導体、ならびに感光性組成物
JP2000147777A (ja) 1998-09-10 2000-05-26 Toray Ind Inc ポジ型感放射線性組成物
WO2005075398A1 (ja) 2004-02-04 2005-08-18 Jsr Corporation カリックスアレーン系化合物、その製造方法、その中間体及びその組成物
JP2006235340A (ja) 2005-02-25 2006-09-07 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物、レジストパターン形成方法および化合物
JP2006267996A (ja) 2004-10-29 2006-10-05 Tokyo Ohka Kogyo Co Ltd レジスト組成物、レジストパターン形成方法および化合物
JP2007008875A (ja) * 2005-06-30 2007-01-18 Jsr Corp カリックスアレーン系誘導体及びそれを含有する組成物

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JPH0527430A (ja) * 1991-07-19 1993-02-05 Fuji Photo Film Co Ltd ポジ型フオトレジスト組成物
KR100234143B1 (ko) * 1996-06-07 1999-12-15 미야즈 쥰이치로 레지스트 물질 및 그 제조 방법
EP1031880A4 (en) * 1998-09-10 2001-10-17 Toray Industries POSITIVE RADIATION-SENSITIVE COMPOSITION
JP3662774B2 (ja) * 1999-06-02 2005-06-22 東京応化工業株式会社 ポジ型レジスト組成物
JP2006096965A (ja) * 2004-02-20 2006-04-13 Tokyo Ohka Kogyo Co Ltd 高分子化合物、該高分子化合物を含有するフォトレジスト組成物、およびレジストパターン形成方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0612452B2 (ja) 1982-09-30 1994-02-16 ブリュ−ワ−・サイエンス・インコ−ポレイテッド 集積回路素子の製造方法
JPH05188598A (ja) 1991-06-28 1993-07-30 Internatl Business Mach Corp <Ibm> 表面反射防止コーティングフィルム
JPH07134413A (ja) 1993-03-23 1995-05-23 At & T Corp フラーレン含有レジスト材料を用いたデバイス作製プロセス
JPH09211862A (ja) 1996-01-31 1997-08-15 Agency Of Ind Science & Technol パターン形成材料及びパターン形成方法
JPH09236919A (ja) 1996-02-28 1997-09-09 Nec Corp 超微細パタン形成方法及び超微細エッチング方法
JPH10282649A (ja) 1996-06-07 1998-10-23 Nippon Telegr & Teleph Corp <Ntt> レジスト組成物及びその製造方法
JPH1129612A (ja) 1997-07-11 1999-02-02 Res Dev Corp Of Japan 末端に非共有電子対を有する官能基を導入した高分子化合物、その製造方法及び該高分子化合物を使用したポジ型レジスト材料
JPH1172916A (ja) 1997-08-28 1999-03-16 Nec Corp 微細パターンおよびその形成方法
JPH11143074A (ja) 1997-09-22 1999-05-28 Univ Birmingham 電子線レジスト
JPH11258796A (ja) 1998-03-11 1999-09-24 Agency Of Ind Science & Technol 電子線レジスト、レジストパターンの形成方法及び微細パターンの形成方法
JPH11322656A (ja) 1998-05-11 1999-11-24 Jsr Corp 新規なカリックスアレーン誘導体およびカリックスレゾルシナレーン誘導体、ならびに感光性組成物
JP2000147777A (ja) 1998-09-10 2000-05-26 Toray Ind Inc ポジ型感放射線性組成物
WO2005075398A1 (ja) 2004-02-04 2005-08-18 Jsr Corporation カリックスアレーン系化合物、その製造方法、その中間体及びその組成物
JP2006267996A (ja) 2004-10-29 2006-10-05 Tokyo Ohka Kogyo Co Ltd レジスト組成物、レジストパターン形成方法および化合物
JP2006235340A (ja) 2005-02-25 2006-09-07 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物、レジストパターン形成方法および化合物
JP2007008875A (ja) * 2005-06-30 2007-01-18 Jsr Corp カリックスアレーン系誘導体及びそれを含有する組成物

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Title
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PROC. SPIE., vol. 5376, 2004, pages 757 - 764

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009022540A1 (ja) * 2007-08-13 2009-02-19 Jsr Corporation 化合物及び感放射線性組成物
US8377627B2 (en) 2007-08-13 2013-02-19 Jsr Corporation Compound and radiation-sensitive composition
JP5310554B2 (ja) * 2007-08-13 2013-10-09 Ｊｓｒ株式会社 化合物及び感放射線性組成物
JP2009196904A (ja) * 2008-02-19 2009-09-03 Jsr Corp 環状化合物及びその製造方法
JP2010128432A (ja) * 2008-12-01 2010-06-10 Jsr Corp 感放射線性組成物
JP2010134246A (ja) * 2008-12-05 2010-06-17 Jsr Corp レジストパターン形成方法及びリンス液
JP2010159244A (ja) * 2008-12-09 2010-07-22 Jsr Corp アレーン系化合物の製造方法及びアレーン系化合物
WO2011013842A1 (en) * 2009-07-31 2011-02-03 Fujifilm Corporation Actinic ray-sensitive or radiation-sensitive composition and pattern forming method using the same
JP2011053369A (ja) * 2009-08-31 2011-03-17 Jsr Corp ネガ型感放射線性樹脂組成物
JP2011053359A (ja) * 2009-08-31 2011-03-17 Jsr Corp ネガ型感放射線性樹脂組成物
JP2011053622A (ja) * 2009-09-04 2011-03-17 Fujifilm Corp 感活性光線性または感放射線性組成物およびそれを用いたパターン形成方法
JP2011231074A (ja) * 2010-04-28 2011-11-17 Jsr Corp カリックスアレーン系化合物及びその製造方法

Also Published As

Publication number Publication date
JP5277966B2 (ja) 2013-08-28
JPWO2008084786A1 (ja) 2010-05-06
EP2100870A4 (en) 2011-05-25
EP2100870A1 (en) 2009-09-16
US8173351B2 (en) 2012-05-08
KR20090097905A (ko) 2009-09-16
US20090274977A1 (en) 2009-11-05
KR101431295B1 (ko) 2014-08-20
TW200838839A (en) 2008-10-01
TWI432408B (zh) 2014-04-01

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