ATE540336T1 - Zusammensetzung zur bildung eines oberschichtfilms und verfahren zur bildung einer fotoresiststruktur - Google Patents

Zusammensetzung zur bildung eines oberschichtfilms und verfahren zur bildung einer fotoresiststruktur

Info

Publication number
ATE540336T1
ATE540336T1 AT07829596T AT07829596T ATE540336T1 AT E540336 T1 ATE540336 T1 AT E540336T1 AT 07829596 T AT07829596 T AT 07829596T AT 07829596 T AT07829596 T AT 07829596T AT E540336 T1 ATE540336 T1 AT E540336T1
Authority
AT
Austria
Prior art keywords
forming
layer film
composition
general formula
repeating unit
Prior art date
Application number
AT07829596T
Other languages
English (en)
Inventor
Yukio Nishimura
Norihiko Sugie
Hiromitsu Nakashima
Norihiro Natsume
Daita Kouno
Original Assignee
Jsr Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr Corp filed Critical Jsr Corp
Application granted granted Critical
Publication of ATE540336T1 publication Critical patent/ATE540336T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
AT07829596T 2006-10-13 2007-10-11 Zusammensetzung zur bildung eines oberschichtfilms und verfahren zur bildung einer fotoresiststruktur ATE540336T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006279490 2006-10-13
JP2007023574 2007-02-01
PCT/JP2007/069858 WO2008047678A1 (fr) 2006-10-13 2007-10-11 Composition pour la formation d'un film de couche supérieure et procédé de formation d'un motif en photorésine

Publications (1)

Publication Number Publication Date
ATE540336T1 true ATE540336T1 (de) 2012-01-15

Family

ID=39313916

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07829596T ATE540336T1 (de) 2006-10-13 2007-10-11 Zusammensetzung zur bildung eines oberschichtfilms und verfahren zur bildung einer fotoresiststruktur

Country Status (7)

Country Link
US (1) US8895229B2 (de)
EP (1) EP2078983B1 (de)
JP (1) JP5088326B2 (de)
KR (2) KR101121380B1 (de)
AT (1) ATE540336T1 (de)
TW (1) TWI412892B (de)
WO (1) WO2008047678A1 (de)

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JP2010039148A (ja) * 2008-08-05 2010-02-18 Jsr Corp 液浸上層膜形成用組成物の製造方法
JP5245700B2 (ja) * 2008-08-25 2013-07-24 Ｊｓｒ株式会社 上層膜形成組成物及び上層膜
JP5228792B2 (ja) * 2008-10-23 2013-07-03 Ｊｓｒ株式会社 上層反射防止膜形成用組成物及び上層反射防止膜
EP2204694A1 (de) 2008-12-31 2010-07-07 Rohm and Haas Electronic Materials LLC Zusammensetzungen und Verfahren für Fotolithografie
EP2204392A1 (de) 2008-12-31 2010-07-07 Rohm and Haas Electronic Materials LLC Zusammensetzungen und Verfahren für Fotolithografie
WO2011030737A1 (ja) 2009-09-11 2011-03-17 Jsr株式会社 感放射線性組成物及び新規化合物
US8691526B2 (en) 2010-01-20 2014-04-08 Xyleco, Inc. Processing materials
WO2011093280A1 (ja) 2010-01-29 2011-08-04 Jsr株式会社 感放射線性樹脂組成物
KR20130086139A (ko) * 2010-05-18 2013-07-31 제이에스알 가부시끼가이샤 액침 상층막 형성용 조성물 및 포토레지스트 패턴 형성 방법
WO2012033145A1 (ja) 2010-09-09 2012-03-15 Jsr株式会社 感放射線性樹脂組成物
TW201224664A (en) 2010-09-29 2012-06-16 Jsr Corp Composition for forming liquid immersion upper layer film, and polymer
WO2012070548A1 (ja) 2010-11-26 2012-05-31 Jsr株式会社 感放射線性組成物及び化合物
JP5729392B2 (ja) 2010-12-02 2015-06-03 Jsr株式会社 感放射線性樹脂組成物及び感放射線性酸発生剤
WO2012096264A1 (ja) 2011-01-11 2012-07-19 Jsr株式会社 感放射線性樹脂組成物及び感放射線性酸発生剤
US9122159B2 (en) * 2011-04-14 2015-09-01 Rohm And Haas Electronic Materials Llc Compositions and processes for photolithography
JP6141620B2 (ja) 2011-11-07 2017-06-07 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 上塗り組成物およびフォトリソグラフィ方法
WO2013069750A1 (ja) 2011-11-11 2013-05-16 Jsr株式会社 レジスト上層膜形成用組成物、レジストパターン形成方法、化合物、化合物の製造方法及び重合体
US9259668B2 (en) 2012-02-17 2016-02-16 Jsr Corporation Cleaning method of immersion liquid, immersion liquid cleaning composition, and substrate
US20130213894A1 (en) 2012-02-17 2013-08-22 Jsr Corporation Cleaning method of immersion liquid, immersion liquid cleaning composition, and substrate
JP5910445B2 (ja) 2012-09-28 2016-04-27 Jsr株式会社 液浸上層膜形成用組成物及びレジストパターン形成方法
WO2014132100A1 (en) * 2013-03-01 2014-09-04 Mater Medical Research Institute Limited Mobilizing agents and uses therefor
JP6540293B2 (ja) 2014-07-10 2019-07-10 Jsr株式会社 レジストパターン微細化組成物及び微細パターン形成方法
CN110716269B (zh) * 2019-09-20 2021-10-29 武汉电信器件有限公司 一种可采用液体浸没式制冷的光模块及其制作方法

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Also Published As

Publication number Publication date
KR20090079223A (ko) 2009-07-21
US20100021852A1 (en) 2010-01-28
EP2078983B1 (de) 2012-01-04
JP5088326B2 (ja) 2012-12-05
EP2078983A1 (de) 2009-07-15
TWI412892B (zh) 2013-10-21
WO2008047678A1 (fr) 2008-04-24
EP2078983A4 (de) 2010-08-25
KR101121380B1 (ko) 2012-03-09
KR101365275B1 (ko) 2014-02-26
KR20120006566A (ko) 2012-01-18
JPWO2008047678A1 (ja) 2010-02-25
TW200832069A (en) 2008-08-01
US8895229B2 (en) 2014-11-25

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