WO2007000809A1 - 半導体装置およびその制御方法 - Google Patents
半導体装置およびその制御方法 Download PDFInfo
- Publication number
- WO2007000809A1 WO2007000809A1 PCT/JP2005/011815 JP2005011815W WO2007000809A1 WO 2007000809 A1 WO2007000809 A1 WO 2007000809A1 JP 2005011815 W JP2005011815 W JP 2005011815W WO 2007000809 A1 WO2007000809 A1 WO 2007000809A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- current
- circuit
- voltage conversion
- conversion circuit
- data line
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
Abstract
Description
Claims
Priority Applications (15)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020077030629A KR100935949B1 (ko) | 2005-06-28 | 2005-06-28 | 반도체 장치 및 그의 제어 방법 |
CN200580050283XA CN101208754B (zh) | 2005-06-28 | 2005-06-28 | 半导体器件及其控制方法 |
EP05765396A EP1909289A1 (en) | 2005-06-28 | 2005-06-28 | Semiconductor device and control method thereof |
JP2007523258A JP4922932B2 (ja) | 2005-06-28 | 2005-06-28 | 半導体装置およびその制御方法 |
PCT/JP2005/011815 WO2007000809A1 (ja) | 2005-06-28 | 2005-06-28 | 半導体装置およびその制御方法 |
US11/478,554 US7596032B2 (en) | 2005-06-28 | 2006-06-28 | Semiconductor device and control method therefor |
US12/512,638 US7969787B2 (en) | 2005-06-28 | 2009-07-30 | Semiconductor device and control method of the same |
US12/512,741 US7978523B2 (en) | 2005-06-28 | 2009-07-30 | Semiconductor device and control method of the same |
US12/819,071 US8045388B2 (en) | 2005-06-28 | 2010-06-18 | Semiconductor device and control method of the same |
US12/901,990 US8264901B2 (en) | 2005-06-28 | 2010-10-11 | Semiconductor device and control method of the same |
US12/905,716 US8130584B2 (en) | 2005-06-28 | 2010-10-15 | Semiconductor device and control method of the same |
US13/253,634 US8351268B2 (en) | 2005-06-28 | 2011-10-05 | Semiconductor device and control method of the same |
US13/413,527 US8705303B2 (en) | 2005-06-28 | 2012-03-06 | Semiconductor device and control method of the same |
US13/610,368 US8611167B2 (en) | 2005-06-28 | 2012-09-11 | Semiconductor device and control method of the same |
US14/081,987 US8995215B2 (en) | 2005-06-28 | 2013-11-15 | Semiconductor device and control method of the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2005/011815 WO2007000809A1 (ja) | 2005-06-28 | 2005-06-28 | 半導体装置およびその制御方法 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/478,554 Continuation-In-Part US7596032B2 (en) | 2005-06-28 | 2006-06-28 | Semiconductor device and control method therefor |
US11/478,554 Continuation US7596032B2 (en) | 2005-06-28 | 2006-06-28 | Semiconductor device and control method therefor |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2007000809A1 true WO2007000809A1 (ja) | 2007-01-04 |
Family
ID=37589296
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2005/011815 WO2007000809A1 (ja) | 2005-06-28 | 2005-06-28 | 半導体装置およびその制御方法 |
Country Status (6)
Country | Link |
---|---|
US (10) | US7596032B2 (ja) |
EP (1) | EP1909289A1 (ja) |
JP (1) | JP4922932B2 (ja) |
KR (1) | KR100935949B1 (ja) |
CN (1) | CN101208754B (ja) |
WO (1) | WO2007000809A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009129470A (ja) * | 2007-11-20 | 2009-06-11 | Toshiba Corp | 半導体記憶装置 |
US8849219B2 (en) | 2012-03-22 | 2014-09-30 | Kabushiki Kaisha Toshiba | DA converter and wireless communication apparatus |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4768770B2 (ja) * | 2008-03-06 | 2011-09-07 | 株式会社東芝 | 半導体記憶装置 |
JP2011002945A (ja) * | 2009-06-17 | 2011-01-06 | Renesas Electronics Corp | 半導体装置 |
JP5088387B2 (ja) * | 2010-02-01 | 2012-12-05 | 日本精工株式会社 | 十字軸式自在継手 |
US8570823B2 (en) * | 2010-02-18 | 2013-10-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Sense amplifier with low sensing margin and high device variation tolerance |
ES2713873T3 (es) | 2010-04-16 | 2019-05-24 | Nuevolution As | Complejos bifuncionales y métodos para hacer y utilizar tales complejos |
KR20120011642A (ko) * | 2010-07-29 | 2012-02-08 | 삼성전자주식회사 | 기준 셀을 포함하는 불휘발성 메모리 장치 및 그것의 기준 전류 설정 방법 |
US8773913B1 (en) | 2011-12-02 | 2014-07-08 | Cypress Semiconductor Corporation | Systems and methods for sensing in memory devices |
WO2013082618A2 (en) * | 2011-12-02 | 2013-06-06 | Cypress Semiconductor Corporation | Systems and methods for sensing in memory devices |
JP5949591B2 (ja) * | 2013-02-13 | 2016-07-06 | ソニー株式会社 | 撮像装置、制御方法、及び、プログラム |
US8902636B2 (en) * | 2013-03-22 | 2014-12-02 | Akira Katayama | Resistance change memory |
US9318190B1 (en) * | 2014-09-30 | 2016-04-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Memory device |
US9552864B1 (en) * | 2016-03-11 | 2017-01-24 | Micron Technology, Inc. | Offset compensation for ferroelectric memory cell sensing |
JP2019169209A (ja) * | 2018-03-22 | 2019-10-03 | 東芝メモリ株式会社 | メモリデバイス |
TWI707335B (zh) * | 2018-11-19 | 2020-10-11 | 友達光電股份有限公司 | 顯示裝置及其驅動方法 |
CN111462802B (zh) * | 2019-01-22 | 2022-05-13 | 上海汉容微电子有限公司 | 一种nor闪存的读取电路 |
CN112242172A (zh) * | 2019-07-19 | 2021-01-19 | 四川省豆萁科技股份有限公司 | 一种nor闪存及其参考电流比较电路 |
US11710519B2 (en) | 2021-07-06 | 2023-07-25 | Macronix International Co., Ltd. | High density memory with reference memory using grouped cells and corresponding operations |
Citations (8)
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JPS6258495A (ja) * | 1985-09-09 | 1987-03-14 | Toshiba Corp | 半導体記憶装置 |
JPH03242898A (ja) * | 1990-02-21 | 1991-10-29 | Sharp Corp | センス増幅回路 |
JP2000021188A (ja) * | 1998-06-30 | 2000-01-21 | Matsushita Electric Ind Co Ltd | 半導体記憶装置 |
JP2001250391A (ja) * | 2000-03-02 | 2001-09-14 | Matsushita Electric Ind Co Ltd | 電流センスアンプ |
JP2002025286A (ja) * | 2000-07-06 | 2002-01-25 | Toshiba Corp | 半導体メモリ集積回路 |
JP2002237193A (ja) * | 2001-02-13 | 2002-08-23 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
WO2003088261A1 (en) * | 2002-04-12 | 2003-10-23 | Advance Micro Devices, Int. | System and method for generating a reference voltage based on averaging the voltages of two complementary programmed dual bit reference cells |
JP2004063059A (ja) * | 2002-07-25 | 2004-02-26 | Ememory Technology Inc | フラッシュメモリ |
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IT1295910B1 (it) * | 1997-10-31 | 1999-05-28 | Sgs Thomson Microelectronics | Circuito di lettura per memorie non volatili |
JP4004179B2 (ja) | 1998-03-23 | 2007-11-07 | ヤマハ発動機株式会社 | 筒内噴射エンジン |
CA2277717C (en) * | 1999-07-12 | 2006-12-05 | Mosaid Technologies Incorporated | Circuit and method for multiple match detection in content addressable memories |
JP3525824B2 (ja) | 1999-09-17 | 2004-05-10 | 日立化成工業株式会社 | Cmp研磨液 |
IT1314042B1 (it) * | 1999-10-11 | 2002-12-03 | St Microelectronics Srl | Circuito amplificatore di lettura per memorie, ad elevata capacita'di discriminazione di livelli di corrente. |
US6259633B1 (en) * | 1999-10-19 | 2001-07-10 | Advanced Micro Devices, Inc. | Sense amplifier architecture for sliding banks for a simultaneous operation flash memory device |
FR2801419B1 (fr) * | 1999-11-18 | 2003-07-25 | St Microelectronics Sa | Procede et dispositif de lecture pour memoire en circuit integre |
FR2801719B1 (fr) * | 1999-11-30 | 2002-03-01 | St Microelectronics Sa | Dispositif de lecture pour memoire en circuit integre |
JP3943790B2 (ja) * | 2000-02-24 | 2007-07-11 | 株式会社東芝 | 負電位検知回路及びこの負電位検知回路を備えた半導体記憶装置 |
CA2310295C (en) * | 2000-05-31 | 2010-10-05 | Mosaid Technologies Incorporated | Multiple match detection circuit and method |
US6395632B1 (en) | 2000-08-31 | 2002-05-28 | Micron Technology, Inc. | Etch stop in damascene interconnect structure and method of making |
US6424571B1 (en) * | 2001-05-01 | 2002-07-23 | Micron Technology, Inc. | Sense amplifier with data line precharge through a self-bias circuit and a precharge circuit |
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KR100515053B1 (ko) * | 2002-10-02 | 2005-09-14 | 삼성전자주식회사 | 비트라인 클램핑 전압 레벨에 대해 안정적인 독출 동작이가능한 마그네틱 메모리 장치 |
JP3692109B2 (ja) | 2002-10-24 | 2005-09-07 | 株式会社東芝 | 半導体装置の製造方法 |
US6999345B1 (en) * | 2002-11-06 | 2006-02-14 | Halo Lsi, Inc. | Method of sense and program verify without a reference cell for non-volatile semiconductor memory |
US7251178B2 (en) * | 2004-09-07 | 2007-07-31 | Infineon Technologies Ag | Current sense amplifier |
JP2004228519A (ja) | 2003-01-27 | 2004-08-12 | Elpida Memory Inc | 半導体装置、及びその製造方法 |
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JP4104151B2 (ja) * | 2003-04-28 | 2008-06-18 | スパンション エルエルシー | 不揮発性半導体記憶装置及び不揮発性半導体記憶装置のプログラム方法 |
JP2004348803A (ja) * | 2003-05-20 | 2004-12-09 | Sharp Corp | 不揮発性メモリ素子のプログラム検証方法および半導体記憶装置とそれを備えた携帯電子機器 |
US7324374B2 (en) * | 2003-06-20 | 2008-01-29 | Spansion Llc | Memory with a core-based virtual ground and dynamic reference sensing scheme |
EP1624462A1 (en) * | 2004-08-02 | 2006-02-08 | STMicroelectronics S.r.l. | An improved sensing circuit for a semiconductor memory |
KR100631923B1 (ko) * | 2004-10-12 | 2006-10-04 | 삼성전자주식회사 | 반도체 메모리에서의 레퍼런스전압 공급장치 및 그의구동방법 |
JP4522217B2 (ja) * | 2004-10-15 | 2010-08-11 | パナソニック株式会社 | 不揮発性半導体メモリ |
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US7061804B2 (en) * | 2004-11-18 | 2006-06-13 | Qualcomm Incorporated | Robust and high-speed memory access with adaptive interface timing |
WO2006106571A1 (ja) * | 2005-03-31 | 2006-10-12 | Spansion Llc | 半導体装置及び基準電圧生成方法 |
-
2005
- 2005-06-28 EP EP05765396A patent/EP1909289A1/en not_active Withdrawn
- 2005-06-28 WO PCT/JP2005/011815 patent/WO2007000809A1/ja active Application Filing
- 2005-06-28 JP JP2007523258A patent/JP4922932B2/ja active Active
- 2005-06-28 CN CN200580050283XA patent/CN101208754B/zh active Active
- 2005-06-28 KR KR1020077030629A patent/KR100935949B1/ko not_active IP Right Cessation
-
2006
- 2006-06-28 US US11/478,554 patent/US7596032B2/en active Active
-
2009
- 2009-07-30 US US12/512,741 patent/US7978523B2/en active Active
- 2009-07-30 US US12/512,638 patent/US7969787B2/en active Active
-
2010
- 2010-06-18 US US12/819,071 patent/US8045388B2/en active Active
- 2010-10-11 US US12/901,990 patent/US8264901B2/en active Active
- 2010-10-15 US US12/905,716 patent/US8130584B2/en active Active
-
2011
- 2011-10-05 US US13/253,634 patent/US8351268B2/en active Active
-
2012
- 2012-03-06 US US13/413,527 patent/US8705303B2/en active Active
- 2012-09-11 US US13/610,368 patent/US8611167B2/en active Active
-
2013
- 2013-11-15 US US14/081,987 patent/US8995215B2/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6258495A (ja) * | 1985-09-09 | 1987-03-14 | Toshiba Corp | 半導体記憶装置 |
JPH03242898A (ja) * | 1990-02-21 | 1991-10-29 | Sharp Corp | センス増幅回路 |
JP2000021188A (ja) * | 1998-06-30 | 2000-01-21 | Matsushita Electric Ind Co Ltd | 半導体記憶装置 |
JP2001250391A (ja) * | 2000-03-02 | 2001-09-14 | Matsushita Electric Ind Co Ltd | 電流センスアンプ |
JP2002025286A (ja) * | 2000-07-06 | 2002-01-25 | Toshiba Corp | 半導体メモリ集積回路 |
JP2002237193A (ja) * | 2001-02-13 | 2002-08-23 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
WO2003088261A1 (en) * | 2002-04-12 | 2003-10-23 | Advance Micro Devices, Int. | System and method for generating a reference voltage based on averaging the voltages of two complementary programmed dual bit reference cells |
JP2004063059A (ja) * | 2002-07-25 | 2004-02-26 | Ememory Technology Inc | フラッシュメモリ |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009129470A (ja) * | 2007-11-20 | 2009-06-11 | Toshiba Corp | 半導体記憶装置 |
US8849219B2 (en) | 2012-03-22 | 2014-09-30 | Kabushiki Kaisha Toshiba | DA converter and wireless communication apparatus |
Also Published As
Publication number | Publication date |
---|---|
US8995215B2 (en) | 2015-03-31 |
US20110182116A1 (en) | 2011-07-28 |
US7978523B2 (en) | 2011-07-12 |
US7969787B2 (en) | 2011-06-28 |
US20130155774A1 (en) | 2013-06-20 |
US8045388B2 (en) | 2011-10-25 |
KR100935949B1 (ko) | 2010-01-12 |
US20140208554A1 (en) | 2014-07-31 |
JPWO2007000809A1 (ja) | 2009-01-22 |
US8705303B2 (en) | 2014-04-22 |
US20120069676A1 (en) | 2012-03-22 |
US7596032B2 (en) | 2009-09-29 |
US8351268B2 (en) | 2013-01-08 |
US8264901B2 (en) | 2012-09-11 |
KR20080021712A (ko) | 2008-03-07 |
US20090290425A1 (en) | 2009-11-26 |
US20110032764A1 (en) | 2011-02-10 |
US8130584B2 (en) | 2012-03-06 |
US20070002639A1 (en) | 2007-01-04 |
CN101208754A (zh) | 2008-06-25 |
EP1909289A1 (en) | 2008-04-09 |
US20090285019A1 (en) | 2009-11-19 |
CN101208754B (zh) | 2011-02-02 |
JP4922932B2 (ja) | 2012-04-25 |
US8611167B2 (en) | 2013-12-17 |
US20100290291A1 (en) | 2010-11-18 |
US20130064016A1 (en) | 2013-03-14 |
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