WO2004008494A2 - Systeme et procede de commande de servomoteurs dans un environnement de fabrication de semi-conducteurs - Google Patents

Systeme et procede de commande de servomoteurs dans un environnement de fabrication de semi-conducteurs Download PDF

Info

Publication number
WO2004008494A2
WO2004008494A2 PCT/US2003/021647 US0321647W WO2004008494A2 WO 2004008494 A2 WO2004008494 A2 WO 2004008494A2 US 0321647 W US0321647 W US 0321647W WO 2004008494 A2 WO2004008494 A2 WO 2004008494A2
Authority
WO
WIPO (PCT)
Prior art keywords
network
servomotor
controller card
local control
command
Prior art date
Application number
PCT/US2003/021647
Other languages
English (en)
Other versions
WO2004008494A3 (fr
Inventor
John Ma
Original Assignee
Aviza Technology, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aviza Technology, Inc. filed Critical Aviza Technology, Inc.
Priority to AU2003249030A priority Critical patent/AU2003249030A1/en
Publication of WO2004008494A2 publication Critical patent/WO2004008494A2/fr
Publication of WO2004008494A3 publication Critical patent/WO2004008494A3/fr

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4409Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45578Elongated nozzles, tubes with holes
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54Apparatus specially adapted for continuous coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67109Apparatus for thermal treatment mainly by convection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67772Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving removal of lid, door, cover
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67775Docking arrangements

Definitions

  • This invention relates generally to semiconductor manufacturing equipment, and more specifically to methods and apparatuses for controlling servomotors in semiconductor manufacturing equipment.
  • servomotors In a semiconductor manufacturing environment, multiple processes or mechanisms may be controlled by servomotors. For example, robotic arms, conveyor belts, elevators, and so forth may all be actuated through one or more servomotors. Generally, these servomotors are connected to a central control or operations area that oversees and controls the servomotors' operation.
  • each servomotor is connected to a servocontroller that is located in the central control area in a discrete wiring scheme.
  • Each servomotor represents a single axis of freedom or motion and each servocontroller typically controls multiple servomotors.
  • the discrete wiring scheme for each servomotor, at least twenty-four wires must be run from the motor's location all the way to the central area. In a five- axis (servomotor) subsystem, this would require a minimum of 120 wires reaching from the servomotor controllers to the various servomotors. This requires a massive amount of cabling, and may also require intermediate cable connections or signal boosters to connect truly remote servomotors to the control network as, for example, when several discrete semiconductor manufacturing units are assembled into one commonly controlled machine.
  • the relatively massive amount of cabling required in such a wiring scheme when coupled with the packing of cables into cable runs or other enclosed, unshielded spaces, may degrade signals transmitted across the network.
  • an electrical signal transmitted across one cable may, if the cable or cable run is improperly shielded, cause interference (or "noise") in signal transmitted across an adjacent cable.
  • This noise may render a portion of the signal unintelligible, thus requiring the signal be re-sent.
  • the more signal repetitions required the more likely that noise disrupts or damages other signals.
  • one embodiment of the invention takes the form of a servomotor network having at least one local control node (or servocontroller) remotely located from a central processing area.
  • the local control node actuates one or more servomotors, and is physically placed near the controlled servomotors.
  • Each servomotor manipulates a different servomechanism.
  • Sample servomechanisms controlled or operated by the embodiment include elevators, valves, robotic arms, automated doors, and any other commonly known element in an automated or industrial control setting.
  • One embodiment of the present invention is well suited for controlling various servomechanisms in a semiconductor manufacturing environment.
  • a network connects each local control node to a controller card.
  • the controller card is generally placed in an expansion slot of an appropriately-configured computer, and is responsible for polling, monitoring, and controlling the various local control nodes.
  • the controller card further acts as an interface between a central processing unit (CPU) and the local control nodes.
  • CPU central processing unit
  • the controller card receives instructions from the CPU by way of a local bus, determines the local control node responsible for the servomotor to which the instruction relates, formats the instructions for transmission across the network, and relays the instructions to the node.
  • "Formatting" in this context includes determining a network address for the proper local control node and ensuring the instruction complies with all network and specialized software protocols. Once the servomotor receives the instructions, it carries them out.
  • the modular nature of the embodiment permits simple addition or substitution of local control nodes. Because all addressing and polling is handled by the controller card, rather than permitting servocontroUers to communicate directly with the CPU, the system programming does not need to be constantly updated to provide current network connections to the CPU. Instead, the plug-and-play nature of the controller card permits it to automatically handle additional local control nodes.
  • Fig. 1 displays one embodiment of the present invention.
  • Fig. 2 displays an exemplary operating environment for one embodiment of the present invention.
  • Fig. 3 displays a network card in accordance with one embodiment of the present invention.
  • Fig. 4 displays a flowchart detailing the operation of the embodiment of Fig. 1 in accordance with the present invention.
  • one embodiment 100 takes the form of a servomotor network, as shown in Fig. 1.
  • a servomotor 150 operates a mechanical device in a servomechanism, such as an elevator, valve, gate, piston, and so forth.
  • Each servomotor is connected to a local control node 140, which is in turn connected to a controller card 120.
  • the embodiment 100 may have multiple servomotors 150 connected to a single control node 140, and multiple control nodes connected to a single controller card 120.
  • Each control node 140 comprises a servocontroller, such as a computer card or other hardware element capable of receiving and executing computer-issued instructions across a single wire network 130.
  • the control node 140 carries out commands relayed by the controller card 120, which generally instruct the control node to operate or otherwise manipulate one or more servomotors 150.
  • the controller card 120 typically is placed in an expansion slot of a computer 105, and handles communication between the various control nodes 140 and a central processing unit (CPU) 110, effectively serving as an intermediary between the two.
  • the controller card 120 may communicate with multiple control nodes 140 under an Ethernet protocol by sequentially polling each node.
  • the controller card 120 is a custom-manufactured card in the present embodiment 100, but may be any computer- compatible card capable of interfacing with control nodes 140 and a CPU 110.
  • Alternate embodiments may use multiple controller cards 120 serially chained, networked in parallel, or otherwise connected to one another instead of a single controller card in order to increase the number of control nodes that may be managed by the embodiment.
  • the computer 105 housing the CPU 110 and controller card may be of any type known to those skilled in the art, including minicomputers, microcomputers, personal (desktop) computers, UNIX stations, SUN stations, programmable logic controllers (PLCs), network servers, and so forth.
  • a UNIX-compatible computer 105 is typically used, with the controller card 120 seated in a Versa Module Eurocard (VME) expansion slot.
  • VME Versa Module Eurocard
  • the controller card 120 communicates with the CPU 110 via a VME bus 115.
  • the controller card 120 may be located in a cage or rack located near, but not in, the computer 105 housing the CPU 110. In such an embodiment, a VME bus 115 nonetheless connects the controller card and CPU.
  • control nodes 140 are connected to the controller card 120 via a single wire lOBaseT or other Ethernet connection 130, although alternate local area network (LAN) standards may be employed.
  • the controller card 120 communicates with the CPU via the NME bus 115.
  • the controller card 120 may be seated in a different type of expansion slot, such as peripheral component interconnect (PCI), industry standard architecture (ISA), Video Electronics Standards Association (VESA), or Accelerated Graphics Port (AGP) slot.
  • PCI peripheral component interconnect
  • ISA industry standard architecture
  • VESA Video Electronics Standards Association
  • AGP Accelerated Graphics Port
  • controller card 120 uses a VME bus 115 to interact with the CPU 110, data may be transferred between the two at approximately 40 megabytes per second (MBps), a rate which presumes 32 bits of data are transferred during every bus cycle (i.e., during each read/write operation). Data may be transferred between the card 120 and CPU 110 at 80 MBps if a 64-bit transfer is used, or even as quickly as 320-500 MBps if a VME320-compliant card is seated in a bus employing the 2eSST transfer protocol. By contrast, a lOBaseT Ethernet connection (such as network 130) transfers data at 10 megabits per second (Mbps), or approximately 1.25 MBps.
  • MBps megabytes per second
  • the controller card 120 may communicate with the CPU 110 at speeds many times that reached by communication between the controller card and a single local control node 140.
  • controller card 120 may interface with the CPU 110 at the high speeds achieved by the VME bus 115 and may poll the control nodes 140 at lower network 130 speeds, no CPU processing cycles need be dedicated to controlling communications with individual control nodes. Instead, the controller card 120 handles polling, collates data received from each node 140, and transmits the data to the CPU 110 across the faster internal bus 115. Thus, the CPU is not forced to wait for data from each individual node 140, and does not dedicate unnecessary clock cycles to requesting data. Accordingly, the overall operation of the present embodiment 100 takes place at much faster speeds than that of previous servomotor control systems. Operating commands are issued by the CPU 110 in accordance with software resident on the computer. These commands are transmitted across the VME bus 115 to the controller card 120 in Versa Module Eurocard format.
  • the VME bus 115 format and corresponding specifications are well known to those skilled in the art.
  • the controller card 120 receives the commands, each of which is resident in a memory space corresponding to a specific control node 140, maps the command to the control node's network address, and transmits the command using the carrier sense multiple access/collision detect (CSMA/CD) protocol to the network address.
  • CSMA/CD carrier sense multiple access/collision detect
  • the local control node 140 then receives the command and executes it as necessary, generally resulting in some motion or action by the servomotor 150 or other attached servomechanism.
  • Fig. 2 displays an exemplary operating environment for the embodiment shown in Fig. 1, namely a small batch vertical furnace system.
  • the furnace 210 includes a process chamber 211, in which various thermal processes are carried out.
  • An elevator 212 is used to move a carrier 213 containing a plurality of semiconductor wafers into and out of the process chamber 211.
  • the term wafer is used broadly herein to indicate any substrate containing a plurality of integrated circuits, one or more vapor-deposited layers, and the like.
  • Wafers are transported between the carrier 213 and a front opening unified pod ("FOUP") 218 with a wafer transfer unit 214.
  • FOUP front opening unified pod
  • the FOUP 218 is placed into position on a shelf 219 and mated to a load port 216.
  • the elevator 212 is lowered so that the carrier 213 is generally opposite the FOUP 218 when mated to the loadport 216.
  • the motion of the elevator 212 is controlled by a servomotor 150 (not shown).
  • the servomotor 150 typically raises and lowers the elevator 212, thus pushing the carrier 213 into the process chamber 211.
  • the servomotor 150 may also place the elevator 212 in at least two loading positions in order to transfer one or more semiconductor wafers onto the carrier 213.
  • Other servomotors are used in the wafer transfer unit 214, for example.
  • the elevator servomotor 150 may be controlled by the present embodiment 100.
  • a front opening unified pod (FOUP) buffering module (not shown) permits a user to queue multiple FOUPs in the present embodiment 100. Each FOUP is processed in turn, typically in batches of four.
  • the present operating environment permits sixteen total FOUPs to be queued for insertion into the furnace, although alternative environments may group FOUPs differently and/or have greater or lesser queues.
  • the FOUP buffering module transfers these groups of FOUPs (or individual
  • FOUPs from a holding or storage area to the load port 216.
  • the FOUPs are taken from the load port 216 to a wafer carrier by the wafer transfer unit 214. Accordingly, multiple FOUPs may be raised into the semiconductor furnace for processing simultaneously.
  • An exemplary FOUP buffering module may have five axes of freedom. Such a FOUP buffering module may also be controlled by the present embodiment 100.
  • the above is simply a single operating environment suitable for the present embodiment. More generally, the embodiment may be employed in any area or process having multiple remotely-located servomotors.
  • the controller card 120 is a custom-manufactured computer card serving as an interface between a CPU 110 and local area network 130 (LAN).
  • LAN local area network 130
  • Fig. 3 depicts a block diagram of one embodiment of a controller card 120 suitable for use with the present embodiment 100 (as shown, for example, in Fig. 1).
  • the controller card 120 includes at least a processor 300, a memory 310, a bus interface 320, and a network interface 330.
  • the controller card 120 serves as the interface between the network 130 (and associated local control nodes 140) and local bus 115 (and associated CPU 110 or other control element).
  • the processor 300 controls the various local control nodes 140, and is operative to issue commands to the node.
  • the processor (or an associated memory, such as memory 310) may also locally store the status of one or more control nodes, along with the last command issued to each node.
  • the processor may take the form of a digital signal processor (DSP) chip or integrated circuit. Alternative embodiments may use different processors.
  • DSP digital signal processor
  • the processor 300 also controls traffic on, routing of, and signals propagated through the network 130.
  • Such network and servomotor control functions are implemented through local, card-level programming.
  • programming relating to the physical location of local control nodes 140 within an operating environment, as well as sequences of operations for each local control node or associated servomotor 150 necessary to achieve a particular result is typically stored at or implemented in the CPU 110.
  • the processor 300 programming is typically stored in (and may be updated on) a flash memory, such as an erasable programmable read-only memory (EPROM). It should be noted that this EPROM is different from the memory 310 shown in Fig. 3.
  • the EPROM is a dedicated memory, generally accessible only by the processor 300 during operation of the card 120, containing programmable instructions executable by the processor. By contrast, the memory effectively functions as a buffer between the processor 300 and CPU 110, as discussed in more detail below.
  • the processor programming may be updated via an RS-232 port (not shown) or other interface connecting an external programming or update source to the EPROM.
  • the network interface 330 transmits commands issued by the processor 300 across the network 130 to the appropriate local control node 140.
  • the network interface 330 is responsible for properly addressing the command in accordance with network protocols, formatting the command, and (if necessary) multiplexing the command with other network traffic. Additionally, the network interface 330 generally accepts incoming data from the network 130, such as status reports and/or feedback from a local control node 140. When such data is received, the network interface may demultiplex or otherwise reconstruct the data (presuming the data was segmented for network transmission) and pass it to the processor 300. In some embodiments, the network interface 330 may transmit data to the memory 310 rather than directly to the processor 300, and similarly may accept commands read out from memory instead of the processor. This transmission path is generally indicated by a dashed line in Fig. 3. Typically, the controller card 120 also includes a memory 310.
  • the memory 310 may be read from and written to by either the CPU 110 (through the local bus interface 320, described below) or the processor 300. Accordingly, the memory 310 typically is a dual-ported memory, which allows simultaneous access by both the CPU and processor.
  • the CPU may transmit a command to the controller card 120, which is generally stored in the memory 310 for access and execution by the processor 300.
  • the processor 300 may write the present status of various local control nodes 140 to the memory 300, which in turn may be accessed by the CPU 110 for later analysis.
  • the local bus interface 320 generally facilitates communication and data transmission between the controller card 120 and the local bus 115 of Fig. 1.
  • the local bus interface may format data for transmission across the local bus 115, and/or format incoming data from the local bus 115 for receipt and processing by the controller card 120.
  • the local bus interface 320 may include multiplexing and traffic control functionality similar to that described with above respect to the network interface 330.
  • the present embodiment 100 employs a VME bus, and thus the local bus interface is optimized therefor, alternative embodiment may employ different types of buses and correspondingly different local bus interfaces 330.
  • the processor 300 generally implements commands initiated by the CPU 110.
  • the CPU 110 transmits a command across the local bus 115.
  • the command is received by the card via the local bus interface 320.
  • the local bus interface passes the command to the memory 310, where the command is stored.
  • the command remains stored in memory until expressly overwritten by a later command from the CPU 110, or (more likely) retrieved by the processor 300.
  • the processor 300 implements the command as one more instructions to one or more local control nodes 140.
  • This implementation typically requires drawing on the software and/or programming commands stored in the processor 300 itself or EPROM.
  • the command language employed by the CPU 110 is generally not the same as that recognized by the local control nodes 140.
  • the "converted" command is passed from the processor 300, through the network interface 330, and across the network 130 to the proper nodes.
  • controller card 120 has been described with reference to specific elements thereof, it should be noted that alternative embodiments of the controller card may omit some of these elements, or may add additional elements, without departing from the spirit and scope of the invention. Further, alternative embodiments of the controller card 120 may include additional functionality not discussed herein, or various card elements may have differing functionality. For example, in alternative embodiments, dual processors may be employed, one to handle network-side transmissions and one to handle local bus-side transmissions, or one to handle incoming data and one outgoing data, and so forth.
  • the controller card 120 may interact with up to four local control nodes 140, each of which is typically a single digital input/output servocontroller card typically placed locally near the servomotors 150 operated by the control node.
  • the controller card 120 is connected to all of the local control nodes 140, generally via a single network control wire.
  • Each control node 140 may typically accept up to thirty-two distinct inputs and outputs, or may instead supervise sixty-four inputs (with no outputs) where only a monitoring function is desired.
  • each local control node 140 has both monitoring and reporting capabilities. That is, the local control node may monitor the servomotor 150 status and actively report the same to the controller card 120.
  • each local control node 140 may instead passively wait for a status poll initiated across the network 130 by the controller card 120, instead of actively transmitting data.
  • the granularity of such monitoring and status transmissions may be configured by a user of the present invention through the CPU 110, by jumpering or otherwise updating programming on the controller card 120, or by locally setting each local control node 140.
  • each local control node 140 monitors and transmits servomotor 150 status every twenty milliseconds.
  • each node 140 may monitor up to two distinct axes of motion.
  • each servomotor 150 operates along a single axis of motion.
  • an elevator control motor operates only along a vertical axis- up and down.
  • each control node 140 may monitor and control two types of servomotors, each operating in two unique axes of freedom, or one type of servomotor operating in two axes of freedom.
  • a local control node 140 may monitor and control one type of servomotor 150, each operating in two axes.
  • Each axis of motion monitored or controlled by a local control node 140 requires twenty- four control cables running from the servomotor 150 to the local control node.
  • Alternative embodiments may employ servomotors 150 of local control nodes 140 requiring less cabling or having a different number of inputs. However, because the local control node 140 is located at or near the servomotor 150, these cables are only run a relatively short distance. As previously mentioned, only a single control wire is run from the node 140 to the controller card 120.
  • the controller card 120 accepts software commands from the CPU 110, and relays these instructions to the various local control nodes 140. Commands are relayed from the CPU 110 to the controller card 120 in VME format. Generally, each control node 140 is mapped to a specific VME memory space. When the CPU 110 transmits an instruction intended for a specific control node 140, the instruction is inserted into the memory space corresponding to the control node 140. The controller card 120 receives the command in the designated memory space, remaps the command to a network address, and transmits the command across the network 130 to the proper node. The node 140, in turn, executes the command. Thus, the controller card 120 deals with all network addressing, protocols employed by the servocontroller software, and so forth.
  • the present embodiment permits up to 100% of existing command software in many operating environments to be used with any number of local control nodes or servomotors, without requiring rewriting of the software for operation in an Ethernet or other local network.
  • the controller card 120 may be installed in a computer 105 and used without reconfiguring the operating system or other software resident on the computer, a feature commonly referred to as "plug and play.” Thus, the card may immediately perform its functions without requiring any user intervention.
  • the general structure of the controller card 120 is provided above.
  • Various embodiments of the controller card 120 may be configured for different computer systems and/or different operating systems resident on a computer. It should be understood that the particular computer and or operating system type is generally transparent to the function of a properly configured controller card 120.
  • the controller card 120 runs computer software that may monitor the status of all existing network 130 connections between the controller card and the various control nodes 140. If a network connection is severed or otherwise interrupted, the software immediately detects the interruption and alert an operator, monitor, or other user. Similarly, the software may detect servomotor 150 or local control node 140 failures and alert a user. Generally speaking, the software employed by the current embodiment performs the same functions as the prior art, but may be custom-scripted to add additional functionality. For example, various alarm methods may be employed, such as audio or visual cues, or electronic messages and/or may be sent to a designated recipient indicating function loss. Similarly, the software may be provided with diagnostic capabilities, permitting it to determine probable causes for network 130 interruptions.
  • the software may be custom programmed to notify a user when function is restored, or to automatically resume operation when an interruption is cleared.
  • software suitable for use with the present embodiment 100 is programmed in C language.
  • the software may permit the CPU 110 to monitor lost network connections or servomotor 150 failures (or other statuses).
  • network 130 information is received by the controller card 120 and converted to a form compatible with the CPU 110 and resident software.
  • Fig. 4 shows a flowchart detailing the logical operation of the embodiment shown in Fig. 1, including the controller card 120 of Fig. 3.
  • the process begins at start step 400.
  • step 405 the controller card 120 checks to determine whether the central processing unit has issued a command to a local control node 140. If no command has been issued, step 410 is executed.
  • step 410 the controller card 120 polls the various local control nodes 140 via the network 130 connections to determine whether any connections have been interrupted or control nodes 140 have temporarily ceased functioning. Essentially, the controller card 120 checks the status of each node 140 to ensure the node is accessible, active, and able to communicate with the card. When no service interruptions are detected by the controller card 120, the embodiment returns to start step 400.
  • the embodiment alerts a user, monitor, or designee in step 415 that a network outage or node 140 failure has occurred.
  • the alert may take any form known to those skilled in the art, including any variety of electronic messaging to any type of device equipped to receive such a message.
  • the embodiment After executing step 415, the embodiment returns to start step 400.
  • step 420 is accessed.
  • the embodiment checks to see whether the controller card 120 may communicate across the network 130 with the local control node 140 for which the CPU 110 command is intended. If no such network connection may be accessed, step 415 is carried out, as detailed above.
  • steps 410-420 may be carried out by independent monitoring software, rather than by the embodiment itself.
  • the CPU command issued in step 405 is directly mapped to bus memory in step 425, as described below, and steps 410-420 are not executed. Presuming a network connection exists between the controller card 120 and the local control node 140, step 425 is next.
  • the CPU 110 command is mapped to the memory space on the VME bus 115 corresponding to the local control node 140 ultimately receiving the instruction.
  • step 430 the controller card 120 receives the command transmitted across the VME bus 115 from the CPU 110.
  • step 435 the controller card 120 determines the network address of the local control node 140 for which the command is intended.
  • step 440 the controller card 120 formats the command for execution by the software and/or hardware comprising the local control node 140, and also in accordance with any network 130 protocols. Following formatting, the command is transmitted across the network 130 in step 445.
  • the local control node 140 receives the command in step 450, and executes the command in step 455. Typically, this results in activating one or more servomotors 150, thus moving the attached servomechanism.
  • a typical command might instruct the local control node 140 to raise the elevator into the process chamber, or place the carrier in position for wafer loading.
  • step 460 is accessed.
  • feedback may be sent from the local control node 140 to the controller card 120. Examples of feedback include indicating whether the command was or was not performed successfully. Another feedback example includes logging a reason for not executing the command, such as a faulty servomotor 150, manual override, unfulfilled prerequisite condition, and so forth.
  • step 465 the feedback is received by the controller card 120 and mapped to VME memory for transmission to the CPU 110 in step 470.
  • step 475 the feedback is processed by the CPU 110, any necessary actions are taken (for example, alerting an operator of a failed command, updating a database to show a properly executed instruction, or activating a status indicator to display the changed position of a servomechanism).
  • start step 400 is once more accessed and the process begins anew.
  • an embodiment may provide additional functionality to the controller card 120 or local control nodes, may vary the number of control nodes supported by a single controller card, may permit a local control node to operate a different number of servomotors 150, or may use different buses, such as the PCI bus.
  • the present invention has been described in the context of specific embodiments and processes, such descriptions are by way of example and not limitation. Accordingly, the proper scope of the present invention is specified by the following claims and not by the preceding examples.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Furnace Details (AREA)
  • Resistance Heating (AREA)
  • Control By Computers (AREA)
  • Control Of Resistance Heating (AREA)
  • Muffle Furnaces And Rotary Kilns (AREA)
  • Physical Vapour Deposition (AREA)
  • Control Of Non-Electrical Variables (AREA)
  • Control Of Fluid Pressure (AREA)

Abstract

L'invention concerne un système et un procédé permettant de commander un réseau de servomoteurs. Le système comprend au moins un noeud local de commande situé à distance d'une zone centrale de traitement. Le noeud local de commande actionne un ou plusieurs servomoteur(s) et est physiquement placé à proximité des servomoteurs commandés. Un réseau connecte chaque noeud local de commande à une carte de contrôleur. Ladite carte de contrôleur est généralement placée dans l'emplacement de carte d'un ordinateur configuré de manière appropriée, et est responsable des interrogations, de la surveillance et des commandes de différents noeuds locaux de commande ainsi que de l'établissement d'une interface avec une unité centrale de traitement (UC) et les noeuds. La carte de contrôleur reçoit des instructions de l'UC via un bus local, détermine le noeud local de commande responsable du servomoteur auquel l'instruction est associé, formate les instructions pour les transmettre sur le réseau et relaie les instructions vers le noeud. De ce fait, la commande de servomoteur est centralisée.
PCT/US2003/021647 2002-07-15 2003-07-10 Systeme et procede de commande de servomoteurs dans un environnement de fabrication de semi-conducteurs WO2004008494A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003249030A AU2003249030A1 (en) 2002-07-15 2003-07-10 Servomotor control system and method in a semiconductor manufacturing environment

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US39653602P 2002-07-15 2002-07-15
US60/396,536 2002-07-15
US42852602P 2002-11-22 2002-11-22
US60/428,526 2002-11-22

Publications (2)

Publication Number Publication Date
WO2004008494A2 true WO2004008494A2 (fr) 2004-01-22
WO2004008494A3 WO2004008494A3 (fr) 2005-04-21

Family

ID=30118590

Family Applications (9)

Application Number Title Priority Date Filing Date
PCT/US2003/021644 WO2004007800A1 (fr) 2002-07-15 2003-07-10 Appareil de traitement thermique et procede d'evacuation d'une chambre de traitement
PCT/US2003/021645 WO2004008052A2 (fr) 2002-07-15 2003-07-10 Systeme et procede de refroidissement d'un appareil de traitement thermique
PCT/US2003/021642 WO2004008493A2 (fr) 2002-07-15 2003-07-10 Procede et appareil destines a supporter des plaquettes a semiconducteur
PCT/US2003/021575 WO2004008491A2 (fr) 2002-07-15 2003-07-10 Systeme de traitement thermique et chambre verticale configurable
PCT/US2003/021647 WO2004008494A2 (fr) 2002-07-15 2003-07-10 Systeme et procede de commande de servomoteurs dans un environnement de fabrication de semi-conducteurs
PCT/US2003/021646 WO2004008008A2 (fr) 2002-07-15 2003-07-10 Commande d'un environnement gazeux dans une chambre de chargement de tranches
PCT/US2003/021648 WO2004008054A1 (fr) 2002-07-15 2003-07-10 Element chauffant variable destine a des gammes de temperatures basses a elevees
PCT/US2003/021641 WO2004007105A1 (fr) 2002-07-15 2003-07-10 Appareil et procede de remplissage d'une chambre de traitement de plaquette a semiconducteur
PCT/US2003/021973 WO2004007318A2 (fr) 2002-07-15 2003-07-15 Appareil de port de chargement et son procede d'utilisation

Family Applications Before (4)

Application Number Title Priority Date Filing Date
PCT/US2003/021644 WO2004007800A1 (fr) 2002-07-15 2003-07-10 Appareil de traitement thermique et procede d'evacuation d'une chambre de traitement
PCT/US2003/021645 WO2004008052A2 (fr) 2002-07-15 2003-07-10 Systeme et procede de refroidissement d'un appareil de traitement thermique
PCT/US2003/021642 WO2004008493A2 (fr) 2002-07-15 2003-07-10 Procede et appareil destines a supporter des plaquettes a semiconducteur
PCT/US2003/021575 WO2004008491A2 (fr) 2002-07-15 2003-07-10 Systeme de traitement thermique et chambre verticale configurable

Family Applications After (4)

Application Number Title Priority Date Filing Date
PCT/US2003/021646 WO2004008008A2 (fr) 2002-07-15 2003-07-10 Commande d'un environnement gazeux dans une chambre de chargement de tranches
PCT/US2003/021648 WO2004008054A1 (fr) 2002-07-15 2003-07-10 Element chauffant variable destine a des gammes de temperatures basses a elevees
PCT/US2003/021641 WO2004007105A1 (fr) 2002-07-15 2003-07-10 Appareil et procede de remplissage d'une chambre de traitement de plaquette a semiconducteur
PCT/US2003/021973 WO2004007318A2 (fr) 2002-07-15 2003-07-15 Appareil de port de chargement et son procede d'utilisation

Country Status (6)

Country Link
EP (2) EP1540258A1 (fr)
JP (2) JP2005533378A (fr)
CN (1) CN1643322A (fr)
AU (9) AU2003249029A1 (fr)
TW (9) TW200405401A (fr)
WO (9) WO2004007800A1 (fr)

Families Citing this family (335)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9051641B2 (en) 2001-07-25 2015-06-09 Applied Materials, Inc. Cobalt deposition on barrier surfaces
US20090004850A1 (en) 2001-07-25 2009-01-01 Seshadri Ganguli Process for forming cobalt and cobalt silicide materials in tungsten contact applications
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US7966969B2 (en) 2004-09-22 2011-06-28 Asm International N.V. Deposition of TiN films in a batch reactor
US7427571B2 (en) 2004-10-15 2008-09-23 Asm International, N.V. Reactor design for reduced particulate generation
TWI332532B (en) 2005-11-04 2010-11-01 Applied Materials Inc Apparatus and process for plasma-enhanced atomic layer deposition
NL1030360C2 (nl) * 2005-11-07 2007-05-08 Holding Mij Wilro B V Oven en werkwijze voor de productie van fotovoltaïsche zonnecellen gebruikmakend van een diffusieproces.
US20070194470A1 (en) * 2006-02-17 2007-08-23 Aviza Technology, Inc. Direct liquid injector device
WO2007099387A1 (fr) 2006-03-03 2007-09-07 Mymetics Corporation Vésicules de type virosome comprenant des antigènes dérivés de gp41
US7691757B2 (en) 2006-06-22 2010-04-06 Asm International N.V. Deposition of complex nitride films
DE102007058053B4 (de) * 2007-11-30 2009-10-15 Von Ardenne Anlagentechnik Gmbh Diffusionsofen und Verfahren zur Erzeugung einer Gasströmung
US9157150B2 (en) * 2007-12-04 2015-10-13 Cypress Semiconductor Corporation Method of operating a processing chamber used in forming electronic devices
JP4885901B2 (ja) * 2008-03-31 2012-02-29 株式会社山武 流量制御システム
US10378106B2 (en) 2008-11-14 2019-08-13 Asm Ip Holding B.V. Method of forming insulation film by modified PEALD
US7833906B2 (en) 2008-12-11 2010-11-16 Asm International N.V. Titanium silicon nitride deposition
US8136618B2 (en) 2009-01-21 2012-03-20 The Raymond Corporation Cyclonic motor cooling for material handling vehicles
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
US8802201B2 (en) 2009-08-14 2014-08-12 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
JP5794497B2 (ja) 2010-06-08 2015-10-14 国立研究開発法人産業技術総合研究所 連結システム
KR101877494B1 (ko) * 2010-12-24 2018-07-13 엘지이노텍 주식회사 진공 열처리 장치
US9312155B2 (en) 2011-06-06 2016-04-12 Asm Japan K.K. High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
US10364496B2 (en) 2011-06-27 2019-07-30 Asm Ip Holding B.V. Dual section module having shared and unshared mass flow controllers
US9018567B2 (en) 2011-07-13 2015-04-28 Asm International N.V. Wafer processing apparatus with heated, rotating substrate support
US10854498B2 (en) 2011-07-15 2020-12-01 Asm Ip Holding B.V. Wafer-supporting device and method for producing same
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
US9147584B2 (en) * 2011-11-16 2015-09-29 Taiwan Semiconductor Manufacturing Company, Ltd. Rotating curing
US9659799B2 (en) 2012-08-28 2017-05-23 Asm Ip Holding B.V. Systems and methods for dynamic semiconductor process scheduling
KR101440307B1 (ko) * 2012-09-17 2014-09-18 주식회사 유진테크 기판처리장치
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
US10177014B2 (en) * 2012-12-14 2019-01-08 Applied Materials, Inc. Thermal radiation barrier for substrate processing chamber components
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
US9589770B2 (en) 2013-03-08 2017-03-07 Asm Ip Holding B.V. Method and systems for in-situ formation of intermediate reactive species
US9484191B2 (en) 2013-03-08 2016-11-01 Asm Ip Holding B.V. Pulsed remote plasma method and system
WO2014151475A1 (fr) * 2013-03-15 2014-09-25 Watkins Bobby G Ii Commande de débit et procédé de gazométrie
US9240412B2 (en) 2013-09-27 2016-01-19 Asm Ip Holding B.V. Semiconductor structure and device and methods of forming same using selective epitaxial process
CN105940481A (zh) * 2014-01-27 2016-09-14 应用材料公司 高速epi系统和腔室构思
US10683571B2 (en) 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
US10167557B2 (en) 2014-03-18 2019-01-01 Asm Ip Holding B.V. Gas distribution system, reactor including the system, and methods of using the same
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US9543171B2 (en) * 2014-06-17 2017-01-10 Lam Research Corporation Auto-correction of malfunctioning thermal control element in a temperature control plate of a semiconductor substrate support assembly that includes deactivating the malfunctioning thermal control element and modifying a power level of at least one functioning thermal control element
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US9890456B2 (en) 2014-08-21 2018-02-13 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US9657845B2 (en) 2014-10-07 2017-05-23 Asm Ip Holding B.V. Variable conductance gas distribution apparatus and method
KR102263121B1 (ko) 2014-12-22 2021-06-09 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 및 그 제조 방법
US10529542B2 (en) 2015-03-11 2020-01-07 Asm Ip Holdings B.V. Cross-flow reactor and method
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US10600673B2 (en) 2015-07-07 2020-03-24 Asm Ip Holding B.V. Magnetic susceptor to baseplate seal
TWI642137B (zh) * 2015-08-04 2018-11-21 日商日立國際電氣股份有限公司 Substrate processing apparatus, reaction container, and manufacturing method of semiconductor device
US9960072B2 (en) 2015-09-29 2018-05-01 Asm Ip Holding B.V. Variable adjustment for precise matching of multiple chamber cavity housings
US10211308B2 (en) 2015-10-21 2019-02-19 Asm Ip Holding B.V. NbMC layers
US10322384B2 (en) 2015-11-09 2019-06-18 Asm Ip Holding B.V. Counter flow mixer for process chamber
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US20170207078A1 (en) * 2016-01-15 2017-07-20 Taiwan Semiconductor Manufacturing Co., Ltd. Atomic layer deposition apparatus and semiconductor process
JP6143964B1 (ja) * 2016-01-25 2017-06-07 三菱電機株式会社 制御装置
US10468251B2 (en) 2016-02-19 2019-11-05 Asm Ip Holding B.V. Method for forming spacers using silicon nitride film for spacer-defined multiple patterning
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10501866B2 (en) 2016-03-09 2019-12-10 Asm Ip Holding B.V. Gas distribution apparatus for improved film uniformity in an epitaxial system
US10343920B2 (en) 2016-03-18 2019-07-09 Asm Ip Holding B.V. Aligned carbon nanotubes
US9892913B2 (en) 2016-03-24 2018-02-13 Asm Ip Holding B.V. Radial and thickness control via biased multi-port injection settings
US10190213B2 (en) 2016-04-21 2019-01-29 Asm Ip Holding B.V. Deposition of metal borides
US10865475B2 (en) 2016-04-21 2020-12-15 Asm Ip Holding B.V. Deposition of metal borides and silicides
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US10032628B2 (en) 2016-05-02 2018-07-24 Asm Ip Holding B.V. Source/drain performance through conformal solid state doping
KR102592471B1 (ko) 2016-05-17 2023-10-20 에이에스엠 아이피 홀딩 비.브이. 금속 배선 형성 방법 및 이를 이용한 반도체 장치의 제조 방법
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US10388509B2 (en) 2016-06-28 2019-08-20 Asm Ip Holding B.V. Formation of epitaxial layers via dislocation filtering
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US10714385B2 (en) 2016-07-19 2020-07-14 Asm Ip Holding B.V. Selective deposition of tungsten
US10381226B2 (en) 2016-07-27 2019-08-13 Asm Ip Holding B.V. Method of processing substrate
US10395919B2 (en) 2016-07-28 2019-08-27 Asm Ip Holding B.V. Method and apparatus for filling a gap
KR102532607B1 (ko) 2016-07-28 2023-05-15 에이에스엠 아이피 홀딩 비.브이. 기판 가공 장치 및 그 동작 방법
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
KR102613349B1 (ko) 2016-08-25 2023-12-14 에이에스엠 아이피 홀딩 비.브이. 배기 장치 및 이를 이용한 기판 가공 장치와 박막 제조 방법
FR3057391B1 (fr) * 2016-10-11 2019-03-29 Soitec Equipement de traitement thermique avec dispositif collecteur
US10410943B2 (en) 2016-10-13 2019-09-10 Asm Ip Holding B.V. Method for passivating a surface of a semiconductor and related systems
US10643826B2 (en) 2016-10-26 2020-05-05 Asm Ip Holdings B.V. Methods for thermally calibrating reaction chambers
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10643904B2 (en) 2016-11-01 2020-05-05 Asm Ip Holdings B.V. Methods for forming a semiconductor device and related semiconductor device structures
US10229833B2 (en) 2016-11-01 2019-03-12 Asm Ip Holding B.V. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10435790B2 (en) 2016-11-01 2019-10-08 Asm Ip Holding B.V. Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap
US10134757B2 (en) 2016-11-07 2018-11-20 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by using the method
KR102546317B1 (ko) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기체 공급 유닛 및 이를 포함하는 기판 처리 장치
US10340135B2 (en) 2016-11-28 2019-07-02 Asm Ip Holding B.V. Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride
KR20180068582A (ko) 2016-12-14 2018-06-22 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
KR20180070971A (ko) 2016-12-19 2018-06-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US10655221B2 (en) 2017-02-09 2020-05-19 Asm Ip Holding B.V. Method for depositing oxide film by thermal ALD and PEALD
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
KR102127130B1 (ko) * 2017-02-17 2020-06-26 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 반도체 장치의 제조 방법 및 프로그램
JP7158133B2 (ja) 2017-03-03 2022-10-21 アプライド マテリアルズ インコーポレイテッド 雰囲気が制御された移送モジュール及び処理システム
US10283353B2 (en) 2017-03-29 2019-05-07 Asm Ip Holding B.V. Method of reforming insulating film deposited on substrate with recess pattern
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
USD876504S1 (en) 2017-04-03 2020-02-25 Asm Ip Holding B.V. Exhaust flow control ring for semiconductor deposition apparatus
KR102457289B1 (ko) 2017-04-25 2022-10-21 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10446393B2 (en) 2017-05-08 2019-10-15 Asm Ip Holding B.V. Methods for forming silicon-containing epitaxial layers and related semiconductor device structures
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10504742B2 (en) 2017-05-31 2019-12-10 Asm Ip Holding B.V. Method of atomic layer etching using hydrogen plasma
US10886123B2 (en) 2017-06-02 2021-01-05 Asm Ip Holding B.V. Methods for forming low temperature semiconductor layers and related semiconductor device structures
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US10685834B2 (en) 2017-07-05 2020-06-16 Asm Ip Holdings B.V. Methods for forming a silicon germanium tin layer and related semiconductor device structures
TWI629441B (zh) 2017-07-07 2018-07-11 寶成工業股份有限公司 Smart oven
KR20190009245A (ko) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10541333B2 (en) 2017-07-19 2020-01-21 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10605530B2 (en) 2017-07-26 2020-03-31 Asm Ip Holding B.V. Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace
US10312055B2 (en) 2017-07-26 2019-06-04 Asm Ip Holding B.V. Method of depositing film by PEALD using negative bias
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US10249524B2 (en) 2017-08-09 2019-04-02 Asm Ip Holding B.V. Cassette holder assembly for a substrate cassette and holding member for use in such assembly
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
USD900036S1 (en) 2017-08-24 2020-10-27 Asm Ip Holding B.V. Heater electrical connector and adapter
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
KR102491945B1 (ko) 2017-08-30 2023-01-26 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
KR102401446B1 (ko) 2017-08-31 2022-05-24 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10607895B2 (en) 2017-09-18 2020-03-31 Asm Ip Holdings B.V. Method for forming a semiconductor device structure comprising a gate fill metal
KR102630301B1 (ko) 2017-09-21 2024-01-29 에이에스엠 아이피 홀딩 비.브이. 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10319588B2 (en) 2017-10-10 2019-06-11 Asm Ip Holding B.V. Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
US10854483B2 (en) * 2017-11-16 2020-12-01 Applied Materials, Inc. High pressure steam anneal processing apparatus
KR102443047B1 (ko) 2017-11-16 2022-09-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 방법 및 그에 의해 제조된 장치
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
CN111316417B (zh) 2017-11-27 2023-12-22 阿斯莫Ip控股公司 与批式炉偕同使用的用于储存晶圆匣的储存装置
JP7206265B2 (ja) 2017-11-27 2023-01-17 エーエスエム アイピー ホールディング ビー.ブイ. クリーン・ミニエンバイロメントを備える装置
US10290508B1 (en) 2017-12-05 2019-05-14 Asm Ip Holding B.V. Method for forming vertical spacers for spacer-defined patterning
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
TWI799494B (zh) 2018-01-19 2023-04-21 荷蘭商Asm 智慧財產控股公司 沈積方法
CN111630203A (zh) 2018-01-19 2020-09-04 Asm Ip私人控股有限公司 通过等离子体辅助沉积来沉积间隙填充层的方法
USD903477S1 (en) 2018-01-24 2020-12-01 Asm Ip Holdings B.V. Metal clamp
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
US10535516B2 (en) 2018-02-01 2020-01-14 Asm Ip Holdings B.V. Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures
USD880437S1 (en) 2018-02-01 2020-04-07 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US11685991B2 (en) 2018-02-14 2023-06-27 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10731249B2 (en) 2018-02-15 2020-08-04 Asm Ip Holding B.V. Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
KR102636427B1 (ko) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 장치
US10658181B2 (en) 2018-02-20 2020-05-19 Asm Ip Holding B.V. Method of spacer-defined direct patterning in semiconductor fabrication
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
KR102646467B1 (ko) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조
US10510536B2 (en) 2018-03-29 2019-12-17 Asm Ip Holding B.V. Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
KR102501472B1 (ko) 2018-03-30 2023-02-20 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
KR20190128558A (ko) 2018-05-08 2019-11-18 에이에스엠 아이피 홀딩 비.브이. 기판 상에 산화물 막을 주기적 증착 공정에 의해 증착하기 위한 방법 및 관련 소자 구조
KR20190129718A (ko) 2018-05-11 2019-11-20 에이에스엠 아이피 홀딩 비.브이. 기판 상에 피도핑 금속 탄화물 막을 형성하는 방법 및 관련 반도체 소자 구조
KR102596988B1 (ko) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 그에 의해 제조된 장치
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11270899B2 (en) 2018-06-04 2022-03-08 Asm Ip Holding B.V. Wafer handling chamber with moisture reduction
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
KR102568797B1 (ko) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 시스템
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
WO2020003000A1 (fr) 2018-06-27 2020-01-02 Asm Ip Holding B.V. Procédés de dépôt cyclique pour former un matériau contenant du métal et films et structures comprenant le matériau contenant du métal
KR20210024462A (ko) 2018-06-27 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 금속 함유 재료를 형성하기 위한 주기적 증착 방법 및 금속 함유 재료를 포함하는 필름 및 구조체
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
KR20200002519A (ko) 2018-06-29 2020-01-08 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10767789B2 (en) 2018-07-16 2020-09-08 Asm Ip Holding B.V. Diaphragm valves, valve components, and methods for forming valve components
US10483099B1 (en) 2018-07-26 2019-11-19 Asm Ip Holding B.V. Method for forming thermally stable organosilicon polymer film
JP7206678B2 (ja) * 2018-07-30 2023-01-18 Tdk株式会社 ロードポート装置、半導体製造装置及びポッド内雰囲気の制御方法
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US10829852B2 (en) 2018-08-16 2020-11-10 Asm Ip Holding B.V. Gas distribution device for a wafer processing apparatus
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
KR20200030162A (ko) 2018-09-11 2020-03-20 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
CN110970344A (zh) 2018-10-01 2020-04-07 Asm Ip控股有限公司 衬底保持设备、包含所述设备的系统及其使用方法
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102592699B1 (ko) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치
US10847365B2 (en) 2018-10-11 2020-11-24 Asm Ip Holding B.V. Method of forming conformal silicon carbide film by cyclic CVD
US10811256B2 (en) 2018-10-16 2020-10-20 Asm Ip Holding B.V. Method for etching a carbon-containing feature
KR102546322B1 (ko) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
KR102605121B1 (ko) 2018-10-19 2023-11-23 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US10381219B1 (en) 2018-10-25 2019-08-13 Asm Ip Holding B.V. Methods for forming a silicon nitride film
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR20200051105A (ko) 2018-11-02 2020-05-13 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 기판 처리 장치
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10559458B1 (en) 2018-11-26 2020-02-11 Asm Ip Holding B.V. Method of forming oxynitride film
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (ko) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치를 세정하는 방법
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
JP2020096183A (ja) 2018-12-14 2020-06-18 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム
JP7203588B2 (ja) * 2018-12-17 2023-01-13 東京エレクトロン株式会社 熱処理装置
TWI819180B (zh) 2019-01-17 2023-10-21 荷蘭商Asm 智慧財產控股公司 藉由循環沈積製程於基板上形成含過渡金屬膜之方法
KR20200091543A (ko) 2019-01-22 2020-07-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
CN111524788B (zh) 2019-02-01 2023-11-24 Asm Ip私人控股有限公司 氧化硅的拓扑选择性膜形成的方法
KR20200102357A (ko) 2019-02-20 2020-08-31 에이에스엠 아이피 홀딩 비.브이. 3-d nand 응용의 플러그 충진체 증착용 장치 및 방법
JP2020136678A (ja) 2019-02-20 2020-08-31 エーエスエム・アイピー・ホールディング・ベー・フェー 基材表面内に形成された凹部を充填するための方法および装置
KR102626263B1 (ko) 2019-02-20 2024-01-16 에이에스엠 아이피 홀딩 비.브이. 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치
TW202104632A (zh) 2019-02-20 2021-02-01 荷蘭商Asm Ip私人控股有限公司 用來填充形成於基材表面內之凹部的循環沉積方法及設備
JP2020133004A (ja) 2019-02-22 2020-08-31 エーエスエム・アイピー・ホールディング・ベー・フェー 基材を処理するための基材処理装置および方法
KR20200108243A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOC 층을 포함한 구조체 및 이의 형성 방법
KR20200108248A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOCN 층을 포함한 구조체 및 이의 형성 방법
KR20200108242A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체
KR20200116033A (ko) 2019-03-28 2020-10-08 에이에스엠 아이피 홀딩 비.브이. 도어 개방기 및 이를 구비한 기판 처리 장치
KR20200116855A (ko) 2019-04-01 2020-10-13 에이에스엠 아이피 홀딩 비.브이. 반도체 소자를 제조하는 방법
US11447864B2 (en) 2019-04-19 2022-09-20 Asm Ip Holding B.V. Layer forming method and apparatus
KR20200125453A (ko) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. 기상 반응기 시스템 및 이를 사용하는 방법
KR20200130118A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 비정질 탄소 중합체 막을 개질하는 방법
KR20200130121A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 딥 튜브가 있는 화학물질 공급원 용기
KR20200130652A (ko) 2019-05-10 2020-11-19 에이에스엠 아이피 홀딩 비.브이. 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조
JP2020188254A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー.ブイ. ウェハボートハンドリング装置、縦型バッチ炉および方法
JP2020188255A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー.ブイ. ウェハボートハンドリング装置、縦型バッチ炉および方法
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
KR20200141003A (ko) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. 가스 감지기를 포함하는 기상 반응기 시스템
KR20200143254A (ko) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
KR20210005515A (ko) 2019-07-03 2021-01-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법
JP2021015791A (ja) 2019-07-09 2021-02-12 エーエスエム アイピー ホールディング ビー.ブイ. 同軸導波管を用いたプラズマ装置、基板処理方法
CN112216646A (zh) 2019-07-10 2021-01-12 Asm Ip私人控股有限公司 基板支撑组件及包括其的基板处理装置
KR20210010307A (ko) 2019-07-16 2021-01-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210010816A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 라디칼 보조 점화 플라즈마 시스템 및 방법
KR20210010820A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 실리콘 게르마늄 구조를 형성하는 방법
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
CN112242296A (zh) 2019-07-19 2021-01-19 Asm Ip私人控股有限公司 形成拓扑受控的无定形碳聚合物膜的方法
CN112309843A (zh) 2019-07-29 2021-02-02 Asm Ip私人控股有限公司 实现高掺杂剂掺入的选择性沉积方法
CN112309900A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
CN112309899A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
CN112323048B (zh) 2019-08-05 2024-02-09 Asm Ip私人控股有限公司 用于化学源容器的液位传感器
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
JP2021031769A (ja) 2019-08-21 2021-03-01 エーエスエム アイピー ホールディング ビー.ブイ. 成膜原料混合ガス生成装置及び成膜装置
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
KR20210024423A (ko) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 홀을 구비한 구조체를 형성하기 위한 방법
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
KR20210024420A (ko) 2019-08-23 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
KR20210029090A (ko) 2019-09-04 2021-03-15 에이에스엠 아이피 홀딩 비.브이. 희생 캡핑 층을 이용한 선택적 증착 방법
KR20210029663A (ko) 2019-09-05 2021-03-16 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11407000B2 (en) 2019-09-23 2022-08-09 S. C. Johnson & Son, Inc. Volatile material dispenser
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (zh) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法
TW202129060A (zh) 2019-10-08 2021-08-01 荷蘭商Asm Ip控股公司 基板處理裝置、及基板處理方法
TW202115273A (zh) 2019-10-10 2021-04-16 荷蘭商Asm Ip私人控股有限公司 形成光阻底層之方法及包括光阻底層之結構
KR20210045930A (ko) 2019-10-16 2021-04-27 에이에스엠 아이피 홀딩 비.브이. 실리콘 산화물의 토폴로지-선택적 막의 형성 방법
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR20210047808A (ko) 2019-10-21 2021-04-30 에이에스엠 아이피 홀딩 비.브이. 막을 선택적으로 에칭하기 위한 장치 및 방법
KR20210050453A (ko) 2019-10-25 2021-05-07 에이에스엠 아이피 홀딩 비.브이. 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR20210054983A (ko) 2019-11-05 2021-05-14 에이에스엠 아이피 홀딩 비.브이. 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR20210062561A (ko) 2019-11-20 2021-05-31 에이에스엠 아이피 홀딩 비.브이. 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템
CN112951697A (zh) 2019-11-26 2021-06-11 Asm Ip私人控股有限公司 基板处理设备
KR20210065848A (ko) 2019-11-26 2021-06-04 에이에스엠 아이피 홀딩 비.브이. 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법
CN112885693A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
CN112885692A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
JP2021090042A (ja) 2019-12-02 2021-06-10 エーエスエム アイピー ホールディング ビー.ブイ. 基板処理装置、基板処理方法
KR20210070898A (ko) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210078405A (ko) 2019-12-17 2021-06-28 에이에스엠 아이피 홀딩 비.브이. 바나듐 나이트라이드 층을 형성하는 방법 및 바나듐 나이트라이드 층을 포함하는 구조
KR20210080214A (ko) 2019-12-19 2021-06-30 에이에스엠 아이피 홀딩 비.브이. 기판 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
JP2021109175A (ja) 2020-01-06 2021-08-02 エーエスエム・アイピー・ホールディング・ベー・フェー ガス供給アセンブリ、その構成要素、およびこれを含む反応器システム
US11993847B2 (en) 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
KR20210095050A (ko) 2020-01-20 2021-07-30 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법 및 박막 표면 개질 방법
TW202130846A (zh) 2020-02-03 2021-08-16 荷蘭商Asm Ip私人控股有限公司 形成包括釩或銦層的結構之方法
TW202146882A (zh) 2020-02-04 2021-12-16 荷蘭商Asm Ip私人控股有限公司 驗證一物品之方法、用於驗證一物品之設備、及用於驗證一反應室之系統
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
US11781243B2 (en) 2020-02-17 2023-10-10 Asm Ip Holding B.V. Method for depositing low temperature phosphorous-doped silicon
TW202203344A (zh) 2020-02-28 2022-01-16 荷蘭商Asm Ip控股公司 專用於零件清潔的系統
KR20210116240A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 조절성 접합부를 갖는 기판 핸들링 장치
US11876356B2 (en) 2020-03-11 2024-01-16 Asm Ip Holding B.V. Lockout tagout assembly and system and method of using same
KR20210117157A (ko) 2020-03-12 2021-09-28 에이에스엠 아이피 홀딩 비.브이. 타겟 토폴로지 프로파일을 갖는 층 구조를 제조하기 위한 방법
KR20210124042A (ko) 2020-04-02 2021-10-14 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법
TW202146689A (zh) 2020-04-03 2021-12-16 荷蘭商Asm Ip控股公司 阻障層形成方法及半導體裝置的製造方法
TW202145344A (zh) 2020-04-08 2021-12-01 荷蘭商Asm Ip私人控股有限公司 用於選擇性蝕刻氧化矽膜之設備及方法
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
US11996289B2 (en) 2020-04-16 2024-05-28 Asm Ip Holding B.V. Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
TW202140831A (zh) 2020-04-24 2021-11-01 荷蘭商Asm Ip私人控股有限公司 形成含氮化釩層及包含該層的結構之方法
TW202146831A (zh) 2020-04-24 2021-12-16 荷蘭商Asm Ip私人控股有限公司 垂直批式熔爐總成、及用於冷卻垂直批式熔爐之方法
KR20210132600A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템
KR20210134226A (ko) 2020-04-29 2021-11-09 에이에스엠 아이피 홀딩 비.브이. 고체 소스 전구체 용기
KR20210134869A (ko) 2020-05-01 2021-11-11 에이에스엠 아이피 홀딩 비.브이. Foup 핸들러를 이용한 foup의 빠른 교환
KR20210141379A (ko) 2020-05-13 2021-11-23 에이에스엠 아이피 홀딩 비.브이. 반응기 시스템용 레이저 정렬 고정구
KR20210143653A (ko) 2020-05-19 2021-11-29 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210145078A (ko) 2020-05-21 2021-12-01 에이에스엠 아이피 홀딩 비.브이. 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법
TW202200837A (zh) 2020-05-22 2022-01-01 荷蘭商Asm Ip私人控股有限公司 用於在基材上形成薄膜之反應系統
TW202201602A (zh) 2020-05-29 2022-01-01 荷蘭商Asm Ip私人控股有限公司 基板處理方法
TW202218133A (zh) 2020-06-24 2022-05-01 荷蘭商Asm Ip私人控股有限公司 形成含矽層之方法
TW202217953A (zh) 2020-06-30 2022-05-01 荷蘭商Asm Ip私人控股有限公司 基板處理方法
KR20220010438A (ko) 2020-07-17 2022-01-25 에이에스엠 아이피 홀딩 비.브이. 포토리소그래피에 사용하기 위한 구조체 및 방법
TW202204662A (zh) 2020-07-20 2022-02-01 荷蘭商Asm Ip私人控股有限公司 用於沉積鉬層之方法及系統
TW202212623A (zh) 2020-08-26 2022-04-01 荷蘭商Asm Ip私人控股有限公司 形成金屬氧化矽層及金屬氮氧化矽層的方法、半導體結構、及系統
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
TW202229613A (zh) 2020-10-14 2022-08-01 荷蘭商Asm Ip私人控股有限公司 於階梯式結構上沉積材料的方法
KR20220053482A (ko) 2020-10-22 2022-04-29 에이에스엠 아이피 홀딩 비.브이. 바나듐 금속을 증착하는 방법, 구조체, 소자 및 증착 어셈블리
TW202223136A (zh) 2020-10-28 2022-06-16 荷蘭商Asm Ip私人控股有限公司 用於在基板上形成層之方法、及半導體處理系統
TW202235675A (zh) 2020-11-30 2022-09-16 荷蘭商Asm Ip私人控股有限公司 注入器、及基板處理設備
US11946137B2 (en) 2020-12-16 2024-04-02 Asm Ip Holding B.V. Runout and wobble measurement fixtures
TW202231903A (zh) 2020-12-22 2022-08-16 荷蘭商Asm Ip私人控股有限公司 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成
GB2610156A (en) * 2021-04-29 2023-03-01 Edwards Ltd Semiconductor processing system
FI129948B (en) * 2021-05-10 2022-11-15 Picosun Oy SUBSTRATE PROCESSING APPARATUS AND METHOD
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD1023959S1 (en) 2021-05-11 2024-04-23 Asm Ip Holding B.V. Electrode for substrate processing apparatus
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate
KR102444786B1 (ko) * 2021-12-23 2022-09-19 주식회사 에이치피에스피 냉각 효율을 향상시키는 고압챔버
CN114990299B (zh) * 2022-08-01 2022-10-04 兴化市天泰合金制品科技有限公司 一种球墨铸铁合金制备用热处理装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5724786A (en) * 1994-09-28 1998-03-10 Tetra Laval Holdings & Finance S.A. Control system having error correcting apparatus
US5826406A (en) * 1997-05-01 1998-10-27 Tetra Laval Holdings & Finance, S.A. Servo-controlled conveyor system for carrying liquid filled containers
US5966897A (en) * 1994-02-02 1999-10-19 Tetra Laval Holdings & Finance, Sa Control system for a packaging machine
US20030082031A1 (en) * 2001-10-30 2003-05-01 Olivier Vatel Wafer handling device and method for testing wafers
US6647328B2 (en) * 1998-06-18 2003-11-11 Kline And Walker Llc Electrically controlled automated devices to control equipment and machinery with remote control and accountability worldwide

Family Cites Families (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4401689A (en) * 1980-01-31 1983-08-30 Rca Corporation Radiation heated reactor process for chemical vapor deposition on substrates
EP0164928A3 (fr) * 1984-06-04 1987-07-29 Texas Instruments Incorporated Réacteur vertical à parois chaudes pour dépôt chimique à partir de la phase vapeur
JPS61191015A (ja) * 1985-02-20 1986-08-25 Hitachi Ltd 半導体の気相成長方法及びその装置
US4753192A (en) * 1987-01-08 1988-06-28 Btu Engineering Corporation Movable core fast cool-down furnace
JPH088220B2 (ja) * 1988-09-05 1996-01-29 株式会社日立製作所 半導体ウェハの熱処理装置、及び熱処理方法
US5001327A (en) * 1987-09-11 1991-03-19 Hitachi, Ltd. Apparatus and method for performing heat treatment on semiconductor wafers
DE3885833T2 (de) * 1987-09-22 1994-03-24 Nec Corp Chemischer Dampfabscheidungsapparat für die Herstellung von hochqualitativen epitaktischen Schichten mit gleichmässiger Dichte.
US4787844A (en) * 1987-12-02 1988-11-29 Gas Research Institute Seal arrangement for high temperature furnace applications
US4914276A (en) * 1988-05-12 1990-04-03 Princeton Scientific Enterprises, Inc. Efficient high temperature radiant furnace
JP2654996B2 (ja) * 1988-08-17 1997-09-17 東京エレクトロン株式会社 縦型熱処理装置
JPH02130943A (ja) * 1988-11-11 1990-05-18 Tel Sagami Ltd 収容治具
US5160545A (en) * 1989-02-03 1992-11-03 Applied Materials, Inc. Method and apparatus for epitaxial deposition
DE3906075A1 (de) * 1989-02-27 1990-08-30 Soehlbrand Heinrich Dr Dipl Ch Verfahren zur thermischen behandlung von halbleitermaterialien und vorrichtung zur durchfuehrung desselben
US5207835A (en) * 1989-02-28 1993-05-04 Moore Epitaxial, Inc. High capacity epitaxial reactor
US5127365A (en) * 1990-02-27 1992-07-07 Kabushiki Kaisha Toshiba Vertical heat-treatment apparatus for semiconductor parts
JP2819073B2 (ja) * 1991-04-25 1998-10-30 東京エレクトロン株式会社 ドープド薄膜の成膜方法
JP3040212B2 (ja) * 1991-09-05 2000-05-15 株式会社東芝 気相成長装置
WO1993023713A1 (fr) * 1992-05-15 1993-11-25 Shin-Etsu Quartz Products Co., Ltd. Appareil de traitement thermique a disposition verticale et materiau thermo-isolant
US5383984A (en) * 1992-06-17 1995-01-24 Tokyo Electron Limited Plasma processing apparatus etching tunnel-type
JP3024449B2 (ja) * 1993-07-24 2000-03-21 ヤマハ株式会社 縦型熱処理炉及び熱処理方法
JPH088194A (ja) * 1994-06-16 1996-01-12 Kishimoto Sangyo Kk 気相成長機構および熱処理機構における加熱装置
US6361618B1 (en) * 1994-07-20 2002-03-26 Applied Materials, Inc. Methods and apparatus for forming and maintaining high vacuum environments
JP2732224B2 (ja) * 1994-09-30 1998-03-25 信越半導体株式会社 ウエーハ支持ボート
JPH08213446A (ja) * 1994-12-08 1996-08-20 Tokyo Electron Ltd 処理装置
US5830277A (en) * 1995-05-26 1998-11-03 Mattson Technology, Inc. Thermal processing system with supplemental resistive heater and shielded optical pyrometry
WO1997003225A1 (fr) * 1995-07-10 1997-01-30 Cvc Products, Inc. Appareil de niveau salle blanche, programmable pour la rotation electromagnetique de substrat et procede destine a un equipement de fabrication de composants micro-electroniques
JP3471144B2 (ja) * 1995-09-06 2003-11-25 東京エレクトロン株式会社 縦型熱処理装置及びその断熱構造体並びに遮熱板
JP3423131B2 (ja) * 1995-11-20 2003-07-07 東京エレクトロン株式会社 熱処理装置及び処理装置
JPH09306980A (ja) * 1996-05-17 1997-11-28 Asahi Glass Co Ltd 縦型ウエハボート
US20010052359A1 (en) * 1997-02-21 2001-12-20 Masayoshi Ikeda Method of substrate temperature control and method of assessing substrate temperature controllability
US5846073A (en) * 1997-03-07 1998-12-08 Semitool, Inc. Semiconductor furnace processing vessel base
US5900177A (en) * 1997-06-11 1999-05-04 Eaton Corporation Furnace sidewall temperature control system
US6352594B2 (en) * 1997-08-11 2002-03-05 Torrex Method and apparatus for improved chemical vapor deposition processes using tunable temperature controlled gas injectors
WO1999036587A1 (fr) * 1998-01-15 1999-07-22 Torrex Equipment Corporation Dispositif et procede de traitement vertical active par plasma
US6204194B1 (en) * 1998-01-16 2001-03-20 F.T.L. Co., Ltd. Method and apparatus for producing a semiconductor device
US6059567A (en) * 1998-02-10 2000-05-09 Silicon Valley Group, Inc. Semiconductor thermal processor with recirculating heater exhaust cooling system
US6051113A (en) * 1998-04-27 2000-04-18 Cvc Products, Inc. Apparatus and method for multi-target physical-vapor deposition of a multi-layer material structure using target indexing
US6030208A (en) * 1998-06-09 2000-02-29 Semitool, Inc. Thermal processor
JP3487497B2 (ja) * 1998-06-24 2004-01-19 岩手東芝エレクトロニクス株式会社 被処理体収容治具及びこれを用いた熱処理装置
US6537461B1 (en) * 2000-04-24 2003-03-25 Hitachi, Ltd. Process for treating solid surface and substrate surface
US6140833A (en) * 1998-11-16 2000-10-31 Siemens Aktiengesellschaft In-situ measurement method and apparatus for semiconductor processing
US6449428B2 (en) * 1998-12-11 2002-09-10 Mattson Technology Corp. Gas driven rotating susceptor for rapid thermal processing (RTP) system
US6193811B1 (en) * 1999-03-03 2001-02-27 Applied Materials, Inc. Method for improved chamber bake-out and cool-down
US6450116B1 (en) * 1999-04-22 2002-09-17 Applied Materials, Inc. Apparatus for exposing a substrate to plasma radicals
JP2000311862A (ja) * 1999-04-28 2000-11-07 Kokusai Electric Co Ltd 基板処理装置
US6121581A (en) * 1999-07-09 2000-09-19 Applied Materials, Inc. Semiconductor processing system
US6391163B1 (en) * 1999-09-27 2002-05-21 Applied Materials, Inc. Method of enhancing hardness of sputter deposited copper films
JP3404674B2 (ja) * 2000-01-21 2003-05-12 株式会社真空技研 超高温熱処理装置
US20020069970A1 (en) * 2000-03-07 2002-06-13 Applied Materials, Inc. Temperature controlled semiconductor processing chamber liner
US6537707B1 (en) * 2000-03-15 2003-03-25 Agilent Technologies, Inc. Two-stage roughing and controlled deposition rates for fabricating laser ablation masks
US6641350B2 (en) * 2000-04-17 2003-11-04 Hitachi Kokusai Electric Inc. Dual loading port semiconductor processing equipment
JP2002083780A (ja) * 2000-09-05 2002-03-22 Hitachi Kokusai Electric Inc 半導体製造装置
US6589350B1 (en) * 2000-09-08 2003-07-08 Advanced Micro Devices, Inc. Vacuum processing chamber with controlled gas supply valve
JP4873820B2 (ja) * 2002-04-01 2012-02-08 株式会社エフティーエル 半導体装置の製造装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5966897A (en) * 1994-02-02 1999-10-19 Tetra Laval Holdings & Finance, Sa Control system for a packaging machine
US5724786A (en) * 1994-09-28 1998-03-10 Tetra Laval Holdings & Finance S.A. Control system having error correcting apparatus
US5826406A (en) * 1997-05-01 1998-10-27 Tetra Laval Holdings & Finance, S.A. Servo-controlled conveyor system for carrying liquid filled containers
US6647328B2 (en) * 1998-06-18 2003-11-11 Kline And Walker Llc Electrically controlled automated devices to control equipment and machinery with remote control and accountability worldwide
US20030082031A1 (en) * 2001-10-30 2003-05-01 Olivier Vatel Wafer handling device and method for testing wafers

Also Published As

Publication number Publication date
WO2004008008A2 (fr) 2004-01-22
WO2004007800A1 (fr) 2004-01-22
WO2004008494A3 (fr) 2005-04-21
AU2003253873A1 (en) 2004-02-02
AU2003253874A8 (en) 2004-02-02
AU2003256487A1 (en) 2004-02-02
TW200419890A (en) 2004-10-01
AU2003249029A1 (en) 2004-02-02
EP1522090A2 (fr) 2005-04-13
JP2005533378A (ja) 2005-11-04
AU2003256486A1 (en) 2004-02-02
AU2003253907A1 (en) 2004-02-02
WO2004008491A3 (fr) 2004-06-03
TW200416774A (en) 2004-09-01
AU2003249030A8 (en) 2004-02-02
JP2005533232A (ja) 2005-11-04
WO2004007800A9 (fr) 2005-01-13
WO2004008054A9 (fr) 2005-01-13
EP1522090A4 (fr) 2006-04-05
AU2003253907A8 (en) 2004-02-02
AU2003249028A1 (en) 2004-02-02
AU2003259104A8 (en) 2004-02-02
WO2004007318A2 (fr) 2004-01-22
WO2004008491A2 (fr) 2004-01-22
TW200411960A (en) 2004-07-01
AU2003253874A1 (en) 2004-02-02
TW200409176A (en) 2004-06-01
WO2004007105A1 (fr) 2004-01-22
WO2004008493A2 (fr) 2004-01-22
TW200405401A (en) 2004-04-01
EP1540258A1 (fr) 2005-06-15
WO2004008493A9 (fr) 2004-07-22
WO2004008008A3 (fr) 2004-12-16
TW200416775A (en) 2004-09-01
AU2003249029A8 (en) 2004-02-02
TW200416773A (en) 2004-09-01
WO2004007318A3 (fr) 2004-08-05
AU2003249030A1 (en) 2004-02-02
TW200406818A (en) 2004-05-01
WO2004008054A1 (fr) 2004-01-22
TW200411717A (en) 2004-07-01
AU2003256486A8 (en) 2004-02-02
WO2004008052A2 (fr) 2004-01-22
WO2004008493A3 (fr) 2004-05-27
WO2004008052A3 (fr) 2004-05-13
AU2003259104A1 (en) 2004-02-02
CN1643322A (zh) 2005-07-20

Similar Documents

Publication Publication Date Title
WO2004008494A2 (fr) Systeme et procede de commande de servomoteurs dans un environnement de fabrication de semi-conducteurs
EP0522005B1 (fr) Module d'interface de reseau equivalent pour connecter un controleur logique programmable a un reseau de communications rapide
US5159673A (en) Apparatus for networking programmable logic controllers to host computers
US6472838B1 (en) Robot controller and control method
US5245704A (en) System for sharing data between microprocessor based devices
US6101419A (en) Modular control system for manufacturing facility
US5131092A (en) Communication system enabling programmable logic controllers access to host computer tasks and host computer access to programmable logic controllers without polling
US5163151A (en) System for processing and prioritizing alarms from devices on data communications network
EP3026863A1 (fr) Pare-feu avec classificateur d'application de paquets
WO2006023567A2 (fr) Passerelle comportant un scanneur entree/sortie
KR100689323B1 (ko) 필드버스 네트워크 다중화 시스템
US5283869A (en) Interrupt structure for network interface circuit
US20210225685A1 (en) Transport apparatus and adapter pendant
JP2014222526A (ja) プロセス制御システムにおいてフィールド装置をコントローラに通信可能な状態で連結する機器および方法
WO2010048379A2 (fr) Passerelle d'accès à distance pour équipement de traitement de semi-conducteurs
US10375216B2 (en) Method and apparatus for communication in a motor drive application
JPH0262606A (ja) Cncの診断方式
JP5253517B2 (ja) 真空処理装置のデータ収集システム
GB2355092A (en) Server monitoring in a semiconductor factory automation system
JP4061489B2 (ja) フィールドバスシステムの通信速度制御方法
US11899429B2 (en) Controlling apparatus for controlling operation of substrate processing apparatus
US6964045B1 (en) Multiple program storage within a programmable logic controller system
EP0522055B1 (fr) Appareil pour connecter des controleurs logiques programmables a des ordinateurs centraux
JPH0697263A (ja) ウェーハ移載制御方式
JPH05307512A (ja) 通信端末装置

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase in:

Ref country code: JP

WWW Wipo information: withdrawn in national office

Country of ref document: JP