WO2004007800A9 - Appareil de traitement thermique et procede d'evacuation d'une chambre de traitement - Google Patents

Appareil de traitement thermique et procede d'evacuation d'une chambre de traitement

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Publication number
WO2004007800A9
WO2004007800A9 PCT/US2003/021644 US0321644W WO2004007800A9 WO 2004007800 A9 WO2004007800 A9 WO 2004007800A9 US 0321644 W US0321644 W US 0321644W WO 2004007800 A9 WO2004007800 A9 WO 2004007800A9
Authority
WO
WIPO (PCT)
Prior art keywords
chamber
valve
mass flow
flow rate
pass
Prior art date
Application number
PCT/US2003/021644
Other languages
English (en)
Other versions
WO2004007800A1 (fr
Inventor
Taiquing Qiu
Original Assignee
Aviza Tech Inc
Taiquing Qiu
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aviza Tech Inc, Taiquing Qiu filed Critical Aviza Tech Inc
Priority to AU2003249028A priority Critical patent/AU2003249028A1/en
Publication of WO2004007800A1 publication Critical patent/WO2004007800A1/fr
Publication of WO2004007800A9 publication Critical patent/WO2004007800A9/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67772—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving removal of lid, door, cover
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67775—Docking arrangements

Definitions

  • the present invention relates generally to the field of semiconductor equipment and processing. More specifically, the present invention relates to a thermal processing apparatus having a vacuum system and method of evacuating down a process chamber.
  • Thermal processing apparatuses are commonly used in the manufacture of semiconductors and integrated circuits (ICs). Thermal processing of semiconductor wafers includes, for example, deposition, etching, heat treating, annealing, diffusion etc. Some processes such as etching and chemical vapor deposition (CVD) are performed under low pressure or vacuum conditions. During the processes under low pressure or vacuum conditions, the process chamber is evacuated from an initial pressure to an operating pressure. For example, the process chamber may initially be at atmospheric pressure for loading wafers, then evacuated to an operational pressure in the milli-torr range. The initial evacuation cycle for a process is sometimes referred to as a "pump down cycle". Typically a pump down cycle is accomplished by using a vacuum pump in flow communication with the process chamber.
  • the present invention provides a thermal processing apparatus having a vacuum system and a method that provides for fast pumping down of a process chamber without generating particulate contamination.
  • the thermal processing apparatus of the invention comprises a process chamber and a vacuum system for evacuating the process chamber.
  • the vacuum system comprises a pump unit in flow communication with the chamber and a valve assembly between the pump unit and the chamber for controlling a mass flow from the chamber to the pump unit.
  • the valve assembly comprises a main vacuum valve and one or more by-pass valves.
  • the one or more by-pass valves are connected to the vacuum line via by-pass lines and in parallel flow relation with the main vacuum valve.
  • the method of evacuating a process chamber of the invention comprises determining a critical maximal mass flow rate and maintaining substantially the maximal gas flow rate during the evacuation of the chamber.
  • the a critical maximal mass flow rate can be empirically determined based a Reynolds number of less than about 2000 to ensure laminar flow.
  • the critical maximal mass flow rate can be determined based on shear force being substantially equal to gravity force for a preidentified particulate type of concern.
  • the step of determining a critical maximal gas flow rate can be accomplished by calculating according to
  • m max represents critical maximal mass flow rate
  • ⁇ represents gas viscosity
  • A represents area of cross section of the annulus flow area formed between a wafer stack and chamber wall
  • h represents distance between a wafer stack and a wall of the chamber.
  • FIG. 1 is a schematic showing a thermal processing apparatus having a vacuum system according to one embodiment of the present invention.
  • FIG. 2 is a schematic showing velocity profiles of a laminar flow and turbulent flow near a chamber surface.
  • FIG. 3 is a schematic showing a flow profile between a wafer stack and a process chamber wall.
  • FIG. 4 is a plot showing flow regimes for particles of different size at different pressures at temperature of 650°C.
  • FIG. 5 is a plot showing an optimized pump down pressure trajectory according to one embodiment of the present invention.
  • the thermal processing system 100 comprises a process chamber 102 and a vacuum system 104 in flow communication with the chamber 102 for evacuating the chamber to low pressure or vacuum conditions.
  • the process chamber 102 can be made in any size suitable for processing either a large batch or mini batch of wafers.
  • the process chamber 102 can be a thermal processing chamber such as a chamber for chemical vapor deposition
  • the process chamber 102 is preferably made of a material that is capable of withstanding thermal and mechanical stresses of high temperature and vacuum operation, and resistant to erosion from gases and vapor used or released during processing.
  • the process chamber 102 is made of quartz or silicon carbide.
  • the process chamber 102 is preferably a vertical reaction chamber. An entrance is provided at the lower portion of the chamber 102 for conveying a carrier or boat 106 carrying a batch of wafers 108 into and out of the process chamber 102 through a movable pedestal 110. The upper portion of the chamber 102 is closed to form a reaction zone.
  • the vertical reaction chamber 102 preferably has an inner tube or liner 112 and an outer tube 114.
  • the inner tube or liner 112 is opened at the lower end and at least partially opened at the upper end.
  • the inner tube 112 directs gas flow and prevents diffusion of impurities outside of the liner on the wafers 108.
  • the boat 106 carrying the wafers 108 is encompassed within the inner tube 112.
  • the outer tube 114 is closed at the upper end but open at the lower end.
  • An annular passageway 116 is formed between the inner and outer tubes 112 and 114 for exhausting a gas in a downward direction.
  • the inner and outer tubes 112 and 114 are hermetically connected to a plenum 118 by seals, such as o-rings.
  • the plenum 118 is made of a material having thermal durability and corrosion resistance, such as stainless steel or quartz.
  • the plenum 118 is sized in a short cylindrical form including an upper flange, a bottom flange and sidewalk
  • the upper flange is adapted to receive and support the outer tube 114 of the chamber 102.
  • the bottom flange is adapted to receive and support the inner tube or liner 112 of the chamber 102.
  • An injection assembly 120 is disposed within the plenum 118 for introducing a process or purge gas into the chamber 102.
  • the injection assembly 120 is disposed in such a manner as to inject the process or purge gas into the reaction zone encompassed by the inner tube 112 of the chamber 102.
  • An exhaust port 122 is provide at the sidewall of the plenum 118 for connecting the process chamber 102 and plenum 118 to the vacuum system 104.
  • the exhaust port 122 is disposed in such a manner as to communicate with the annular passageway 116 formed between the inner and outer tubes 112 and 114.
  • the vacuum system 104 comprises a pump unit 124 and a valve
  • the pump unit 124 is connected to the exhaust port 122 via a vacuum line 128 and in flow communication with the process chamber 102.
  • the valve assembly 126 is disposed between the pump unit 124 and process chamber 1 2 on the vacuum line 128.
  • the valve assembly 126 controls a gas flow from the process chamber 102 to the pump unit 124 and is capable of completely isolating the process chamber 102
  • the pump unit 124 can comprise a dry pump, booster pump, Roots pump, or any combination of two or more of the pumps.
  • the pump unit 124 can be a dry pump system such as Model iQDP80/iQMB1200F available from BOC Edwards in Boston, Massachusetts.
  • the valve assembly 126 comprises a main vacuum valve 130 disposed on the vacuum line 128.
  • the main vacuum valve 130 can be any type that provides complete isolation between the process chamber 102 and the pump unit 124.
  • the main valve 130 is a gate valve available in the prior art.
  • the gate valve can be of an on/off type that operates between a fully open and fully close position.
  • the gate valve is a DC motor driven valve that can be adjusted in any position between a fully open and close position.
  • the valve assembly 126 comprises a by-pass valve 132.
  • the by-pass valve 132 is disposed at the vacuum line 128 via a by-pass line 133 and in parallel flow relation with the main vacuum valve 130.
  • the valve assembly 126 may further comprise a second by-pass valve (not shown) that is disposed at the vacuum line 128 via a by-pass line (not shown) and in parallel flow relation with the main vacuum valve 130.
  • the combination of a main vacuum valve and one or more by-pass valves can achieve fast pump down of the process chamber with a substantially constant mass flow rate as described below.
  • the by-pass valves 132 are orifice valves having a predetermined opening area.
  • the valve assembly 126 may comprise a first and a second orifice valve, each of which has an opening area.
  • the second orifice valve can have an opening area greater than that of the first orifice valve.
  • the first orifice valve has an opening with a diameter ranging from about 1 to 3 mm.
  • the second orifice valve can have an opening with a diameter ranging from about 2 to 4 mm.
  • a mass flow controller (not shown) can be used to maintain a constant mass flow rate from the chamber 102 to the pump unit 124 and completely isolate the chamber 102 from the pump unit 124.
  • the vacuum system 104 may further include a throttle or butter fly valve 134 between the valve assembly 126 and the pump unit 124.
  • the throttle or butter fly valve 134 has a disk 136 that changes its angle by a controlled rotary actuator (not shown).
  • the throttle valve 134 is used to stabilize the chamber pressure to a predetermined value at a predetermined flow rate of process chemicals.
  • the throttle valve 134 also changes the vacuum conductance of the valve assembly 126 and thus the chamber pressure. This can be done by adjusting the angle of the actuated disk 136.
  • the throttle valve 134 provides the highest vacuum conductance and thus the lowest chamber pressure at the steady state.
  • the disk 136 is perpendicular to the flow, it produces the lowest conductance, resulting the highest chamber pressure at the steady state.
  • the thermal processing apparatus 100 may further comprise one or more temperature sensing elements (not shown) disposed between the inner and outer tubes 112 and 114 for monitoring the temperature within the process chamber 102.
  • the thermal processing apparatus 100 may also comprise one or more pressure sensors or transducers (not shown) configured to measure the pressure within the process chamber 102.
  • the first by-pass valve 132 is opened first from an initial condition where both the main vacuum valve 130 and the second by-pass valve (not shown) are closed to perform a first stage of the pump down process. Then the first by-pass valve 132 is closed and the second by-pass-valve is opened simultaneously at a second pump down stage when the main vacuum valve 130 is closed.
  • both the first and second by-pass valves are opened while the main vacuum 130 remains closed.
  • the first and second bypass valves are closed and the main vacuum valve 130 is opened to perform a hard pump down stage.
  • the throttle valve 134 is adjusted to stabilize the pressure within the process chamber 102.
  • the adhesion force between the particles and the chamber wall keeps the particles on the wall and prevents them from migrating to the semiconductor wafers.
  • a pump down process produces a gas flow along the chamber wall. The flow creates a shear force on particles formed on the wall. If the shear force is greater than a critical value, the particles will be dislodged from the chamber wall. Once becoming loose, the particles flow with the gas and can deposit on the semiconductor wafers, causing particle contamination.
  • the method of evacuating a process chamber of the invention comprises dete ⁇ riining a critical maximal gas flow rate which minimizes dislodging of particulate contaminates formed in the chamber, and maintaining substantially the maximal gas flow rate during the evacuation of the chamber.
  • the shear force on a particle on the chamber wall depends on the types of the flow near the chamber wall.
  • a turbulent flow refers to a flow where both the flow velocity and flow pressure fluctuate randomly.
  • a laminar flow refers to a flow where both the flow velocity and flow pressure are stable.
  • FIG. 2 schematically shows velocity profiles of a laminar flow and turbulent flow near a chamber wall.
  • the mean flow velocity increases rapidly away from the wall.
  • the flow velocity increases only slowly away from the surface.
  • U T the velocity of a turbulent flow
  • U L the velocity of a laminar flow
  • a turbulent flow produces a much greater shear force on particles than a laminar flow and should thus be avoided during the pump down process.
  • the Reynolds number (Re) indicates whether a gas flow between a wafer stack and chamber wall is turbulent or laminar.
  • the Reynolds number can be expressed by the following equation, with reference to FIG. 3:
  • Equation (3) shows that to keep the Reynolds number below 2000 during the pump down process, the mass flow rate should be kept below a constant value. Since the gas viscosity increases with temperature, e.g., 2.7x10 "5 Ns/m 2 at 300°C and 3.9xl0 "5 Ns/m 2 at 700°C, a higher mass flow rate is allowed at a higher temperature to avoid a turbulent flow. As described above, the maximum shear force on particles created by the gas flow should be smaller than a critical value to avoid dislodging of the particles from the chamber wall.
  • the flow velocity (U ) at the center position of a particle can be expressed by the following equation:
  • the molecular mean free path ( ⁇ ) refers to the distance that a molecule travels between two consecutive collisions and can be expressed by the following equation:
  • FIG. 4 is a plot showing the flow regimes for different size particles at different pressures at temperature of 650°C.
  • R is the gas constant.
  • the gas constant (R) for nitrogen is 297 J/kg-K.
  • FIG. 4 is a plot showing the flow regimes for different size particles at different pressures at temperature of 650°C.
  • a relatively large particle may experience different type of gas flows during the pump down process.
  • the gas in the chamber is dense, and the molecular mean free path is small.
  • the flow around a particle of two- micron diameter on the wall is continuum.
  • the chamber pressure decreases.
  • the molecular mean free path becomes comparable to the particle diameter.
  • the gas flow around the particle of two-micron diameter becomes free molecular flow.
  • Equation 7 characterize the shear force produced by the free molecular flow on the particles, which can be further expressed by the gas density and mass flow rate according to the following equation:
  • Equation (9) shows that the shear force on a particle is proportional to the particle volume (d 3 ) and mass flow rate (m). Accordingly, the ratio (N) of shear force to gravity force can be expressed by the following equation:
  • the pressure in the chamber is related to the mass of gas in the chamber according to the following equation:
  • PV MRT (13) where P is the chamber pressure, V is the chamber volume, M is the total mass of gas in the chamber, and T is the chamber temperature.
  • the chamber pressure drops as gas molecules are removed from the chamber as expressed by the following equation: dP _ RT dM (14) dt ⁇ V dt
  • the method of fast pumping down a process chamber comprises determining a critical maximal mass flow rate by calculating according to equation (12), and evacuating the chamber by flowing the gas through a mass flow controller.
  • the mass flow controller is set substantially at the critical maximal mass flow rate so that the mass flow of the gas evacuated from the chamber during the evacuation is substantially equal to the critical maximal mass flow rate throughout the evacuation.
  • the evacuation is performed by directing the gas from the chamber through a vacuum system having a valve assembly with an adjustable effective orifice size.
  • the gas flow is controlled by setting the valve assembly to a first effective orifice size during a first segment of the evacuation beginning at a first pressure, and maintaining substantially the maximal mass flow rate during the first segment of the evacuation. Then, the valve assembly is set to a second effective orifice size greater than the first effective orifice size during a second segment of the evacuation beginning at a second pressure, and maintaining substantially the maximal mass flow rate during the second segment of the evacuation.
  • the first effective orifice size is a function of the first pressure and the critical maximal mass flow rate.
  • the second effective orifice size is a function of the second pressure and the critical maximal mass flow rate.
  • the valve assembly may comprise a main vacuum valve, and a first and second by-pass valve.
  • the second by-pass valve has an opening area greater than that of the first by-pass valve.
  • the first by-pass valve is opened first and maintains the maximal mass flow rate as calculated according to equation (12) at a first time period.
  • the first by-pass valve is closed and the second by-pass valve is opened simultaneously and maintains the maximal gas flow rate at a second time period when the main vacuum valve is closed.
  • both the first and second by-pass valves are opened and maintain the maximal gas flow rate at a third time period.
  • both the first and second by-pass valves are closed and the main vacuum valve is opened simultaneously and maintains the maximal flow rate at a fourth time period.
  • the first through fourth time periods are substantially equal during the pump down process.
  • the process chamber is initially pumped down from about 760 ton to about 400 torr in 1.47 minutes by using a first orifice valve having an opening diameter of about 2.2mm. Then the chamber is pumped down from about 400 torr to about 120 ton in 1.48 minutes by using a second orifice valve having an opening diameter of about 3.0mm. Then the chamber is pumped down from about 120 torr to about 20 torr in 1.45 minutes by opening both orifice valves. Finally, the chamber is pumped down from to about 20 mtorr in about 1.20 minutes by closing both orifice valves and opening a gate valve.
  • the present invention further provides a method of optimizing a pump down process comprising the following steps: a. setting a safety margin (S) to prevent particle generation during the fast pump down process, S>1; determining the maximal mass flow rate (m 0 ) in the pump down process; 500 ⁇ A m r (17) hS c.
  • S safety margin

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
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  • Computer Hardware Design (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Furnace Details (AREA)
  • Resistance Heating (AREA)
  • Control By Computers (AREA)
  • Control Of Resistance Heating (AREA)
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  • Control Of Fluid Pressure (AREA)

Abstract

L'invention concerne un appareil de traitement thermique (100) comprenant une chambre de traitement (102) et un système d'aspiration (104) conçu pour évacuer la chambre de traitement. Ledit système d'aspiration comprend une pompe (124) en communication fluidique avec ladite chambre et un ensemble soupape (126) placé entre la pompe et la chambre de façon à réguler le débit massique de la chambre vers la pompe. L'ensemble soupape comprend une soupape d'aspiration principale (130) et au moins une soupape de dérivation (132). Les soupapes de dérivation sont reliées à une conduite d'aspiration (128) par le biais de conduites de dérivation (133) et en débit parallèle par rapport à la soupape d'aspiration principale.
PCT/US2003/021644 2002-07-15 2003-07-10 Appareil de traitement thermique et procede d'evacuation d'une chambre de traitement WO2004007800A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003249028A AU2003249028A1 (en) 2002-07-15 2003-07-10 Thermal processing apparatus and method for evacuating a process chamber

Applications Claiming Priority (4)

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US39653602P 2002-07-15 2002-07-15
US60/396,536 2002-07-15
US42852602P 2002-11-22 2002-11-22
US60/428,526 2002-11-22

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WO2004007800A1 WO2004007800A1 (fr) 2004-01-22
WO2004007800A9 true WO2004007800A9 (fr) 2005-01-13

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PCT/US2003/021644 WO2004007800A1 (fr) 2002-07-15 2003-07-10 Appareil de traitement thermique et procede d'evacuation d'une chambre de traitement
PCT/US2003/021645 WO2004008052A2 (fr) 2002-07-15 2003-07-10 Systeme et procede de refroidissement d'un appareil de traitement thermique
PCT/US2003/021642 WO2004008493A2 (fr) 2002-07-15 2003-07-10 Procede et appareil destines a supporter des plaquettes a semiconducteur
PCT/US2003/021575 WO2004008491A2 (fr) 2002-07-15 2003-07-10 Systeme de traitement thermique et chambre verticale configurable
PCT/US2003/021647 WO2004008494A2 (fr) 2002-07-15 2003-07-10 Systeme et procede de commande de servomoteurs dans un environnement de fabrication de semi-conducteurs
PCT/US2003/021646 WO2004008008A2 (fr) 2002-07-15 2003-07-10 Commande d'un environnement gazeux dans une chambre de chargement de tranches
PCT/US2003/021648 WO2004008054A1 (fr) 2002-07-15 2003-07-10 Element chauffant variable destine a des gammes de temperatures basses a elevees
PCT/US2003/021641 WO2004007105A1 (fr) 2002-07-15 2003-07-10 Appareil et procede de remplissage d'une chambre de traitement de plaquette a semiconducteur
PCT/US2003/021973 WO2004007318A2 (fr) 2002-07-15 2003-07-15 Appareil de port de chargement et son procede d'utilisation

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PCT/US2003/021645 WO2004008052A2 (fr) 2002-07-15 2003-07-10 Systeme et procede de refroidissement d'un appareil de traitement thermique
PCT/US2003/021642 WO2004008493A2 (fr) 2002-07-15 2003-07-10 Procede et appareil destines a supporter des plaquettes a semiconducteur
PCT/US2003/021575 WO2004008491A2 (fr) 2002-07-15 2003-07-10 Systeme de traitement thermique et chambre verticale configurable
PCT/US2003/021647 WO2004008494A2 (fr) 2002-07-15 2003-07-10 Systeme et procede de commande de servomoteurs dans un environnement de fabrication de semi-conducteurs
PCT/US2003/021646 WO2004008008A2 (fr) 2002-07-15 2003-07-10 Commande d'un environnement gazeux dans une chambre de chargement de tranches
PCT/US2003/021648 WO2004008054A1 (fr) 2002-07-15 2003-07-10 Element chauffant variable destine a des gammes de temperatures basses a elevees
PCT/US2003/021641 WO2004007105A1 (fr) 2002-07-15 2003-07-10 Appareil et procede de remplissage d'une chambre de traitement de plaquette a semiconducteur
PCT/US2003/021973 WO2004007318A2 (fr) 2002-07-15 2003-07-15 Appareil de port de chargement et son procede d'utilisation

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EP (2) EP1540258A1 (fr)
JP (2) JP2005533378A (fr)
CN (1) CN1643322A (fr)
AU (9) AU2003249029A1 (fr)
TW (9) TW200405401A (fr)
WO (9) WO2004007800A1 (fr)

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WO2004008008A2 (fr) 2004-01-22
WO2004007800A1 (fr) 2004-01-22
WO2004008494A3 (fr) 2005-04-21
AU2003253873A1 (en) 2004-02-02
AU2003253874A8 (en) 2004-02-02
AU2003256487A1 (en) 2004-02-02
TW200419890A (en) 2004-10-01
AU2003249029A1 (en) 2004-02-02
EP1522090A2 (fr) 2005-04-13
JP2005533378A (ja) 2005-11-04
AU2003256486A1 (en) 2004-02-02
AU2003253907A1 (en) 2004-02-02
WO2004008491A3 (fr) 2004-06-03
TW200416774A (en) 2004-09-01
AU2003249030A8 (en) 2004-02-02
JP2005533232A (ja) 2005-11-04
WO2004008054A9 (fr) 2005-01-13
EP1522090A4 (fr) 2006-04-05
AU2003253907A8 (en) 2004-02-02
WO2004008494A2 (fr) 2004-01-22
AU2003249028A1 (en) 2004-02-02
AU2003259104A8 (en) 2004-02-02
WO2004007318A2 (fr) 2004-01-22
WO2004008491A2 (fr) 2004-01-22
TW200411960A (en) 2004-07-01
AU2003253874A1 (en) 2004-02-02
TW200409176A (en) 2004-06-01
WO2004007105A1 (fr) 2004-01-22
WO2004008493A2 (fr) 2004-01-22
TW200405401A (en) 2004-04-01
EP1540258A1 (fr) 2005-06-15
WO2004008493A9 (fr) 2004-07-22
WO2004008008A3 (fr) 2004-12-16
TW200416775A (en) 2004-09-01
AU2003249029A8 (en) 2004-02-02
TW200416773A (en) 2004-09-01
WO2004007318A3 (fr) 2004-08-05
AU2003249030A1 (en) 2004-02-02
TW200406818A (en) 2004-05-01
WO2004008054A1 (fr) 2004-01-22
TW200411717A (en) 2004-07-01
AU2003256486A8 (en) 2004-02-02
WO2004008052A2 (fr) 2004-01-22
WO2004008493A3 (fr) 2004-05-27
WO2004008052A3 (fr) 2004-05-13
AU2003259104A1 (en) 2004-02-02
CN1643322A (zh) 2005-07-20

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