WO2002093257A2 - Projektionsbelichtungsanlage der mikrolithographie, - Google Patents

Projektionsbelichtungsanlage der mikrolithographie, Download PDF

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Publication number
WO2002093257A2
WO2002093257A2 PCT/EP2002/004900 EP0204900W WO02093257A2 WO 2002093257 A2 WO2002093257 A2 WO 2002093257A2 EP 0204900 W EP0204900 W EP 0204900W WO 02093257 A2 WO02093257 A2 WO 02093257A2
Authority
WO
WIPO (PCT)
Prior art keywords
force introduction
optical element
optical
optical system
force
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2002/004900
Other languages
German (de)
English (en)
French (fr)
Other versions
WO2002093257A3 (de
WO2002093257A8 (de
Inventor
Martin Brunotte
Jürgen HARTMAIER
Hubert Holderer
Winfried Kaiser
Alexander Kohl
Jens Kugler
Manfred Maul
Christian Wagner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
Carl Zeiss AG
Original Assignee
Carl Zeiss SMT GmbH
Carl Zeiss AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss SMT GmbH, Carl Zeiss AG filed Critical Carl Zeiss SMT GmbH
Priority to EP02769464A priority Critical patent/EP1390813A2/de
Priority to KR10-2003-7000622A priority patent/KR20030019577A/ko
Priority to JP2002589877A priority patent/JP2004525527A/ja
Publication of WO2002093257A2 publication Critical patent/WO2002093257A2/de
Publication of WO2002093257A3 publication Critical patent/WO2002093257A3/de
Priority to US10/714,573 priority patent/US6879379B2/en
Anticipated expiration legal-status Critical
Publication of WO2002093257A8 publication Critical patent/WO2002093257A8/de
Priority to US10/906,737 priority patent/US20050134967A1/en
Priority to US11/101,235 priority patent/US7170585B2/en
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00—Projectors or projection-type viewers; Accessories therefor
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/08—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of polarising materials
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/02—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of crystals, e.g. rock-salt, semi-conductors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/30—Polarising elements
    • G02B5/3083—Birefringent or phase retarding elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G03F7/70966—Birefringence

Definitions

  • the invention relates to a projection exposure system of microlithography according to the preamble of claims 1 and 41, an optical system, in particular a microlithographic projection objective, according to the preamble of claims 9 and 12, a manufacturing method of a microlithography projection object according to the preamble of claim 42 as well as a microlithographic structuring method according to the preamble of claim 44.
  • the object of the invention is therefore to provide a compensation of this disturbance by direction-dependent birefringence, with which even high-aperture projection lenses can be operated optimally.
  • the voltage birefringence can be set by means of the piezo control unit 157.
  • the contact body 385 is made of resilient material. On its side facing away from the lever body 379, the contact body 385 has a contact nose 389, which on the Chamfer surface 373 of the correction element 344 rests.
  • the force introduction device 570 has a support ring 594, which is arranged coaxially with respect to the optical axis 571 around the peripheral surface 572 of the correction element 544.
  • a plurality of piezo actuators 595 which are variable in length in the radial direction with respect to the optical axis 571, are supported on the inner lateral surface of the support ring 594.
  • the piezo actuators 595 are connected to the control device 584 via control lines 583.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lenses (AREA)
  • Lens Barrels (AREA)
PCT/EP2002/004900 2001-05-15 2002-05-04 Projektionsbelichtungsanlage der mikrolithographie, Ceased WO2002093257A2 (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
EP02769464A EP1390813A2 (de) 2001-05-15 2002-05-04 Projektionsbelichtungsanlage der mikrolithographie
KR10-2003-7000622A KR20030019577A (ko) 2001-05-15 2002-05-04 마이크로리토그래피 투사 조명 시설, 광학 시스템,마이크로리토그래피-렌즈 시스템의 제조 방법 및마이크로리토그래픽 구조화 방법
JP2002589877A JP2004525527A (ja) 2001-05-15 2002-05-04 マイクロリソグラフィーの投射露光装置、光学システム、マイクロリソグラフィー投射レンズの製造方法、およびマイクロリソグラフィーによる構造化方法
US10/714,573 US6879379B2 (en) 2001-05-15 2003-11-14 Projection lens and microlithographic projection exposure apparatus
US10/906,737 US20050134967A1 (en) 2001-05-15 2005-03-03 Projection lens and microlithographic projection exposure apparatus
US11/101,235 US7170585B2 (en) 2001-05-15 2005-04-07 Projection lens and microlithographic projection exposure apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10123725.1 2001-05-15
DE10123725A DE10123725A1 (de) 2001-05-15 2001-05-15 Projektionsbelichtungsanlage der Mikrolithographie, Optisches System und Herstellverfahren

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/714,573 Continuation US6879379B2 (en) 2001-05-15 2003-11-14 Projection lens and microlithographic projection exposure apparatus

Publications (3)

Publication Number Publication Date
WO2002093257A2 true WO2002093257A2 (de) 2002-11-21
WO2002093257A3 WO2002093257A3 (de) 2003-09-25
WO2002093257A8 WO2002093257A8 (de) 2003-12-31

Family

ID=7684936

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2002/004900 Ceased WO2002093257A2 (de) 2001-05-15 2002-05-04 Projektionsbelichtungsanlage der mikrolithographie,

Country Status (7)

Country Link
US (3) US6879379B2 (enExample)
EP (1) EP1390813A2 (enExample)
JP (1) JP2004525527A (enExample)
KR (1) KR20030019577A (enExample)
DE (1) DE10123725A1 (enExample)
TW (1) TWI266149B (enExample)
WO (1) WO2002093257A2 (enExample)

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US6754902B2 (en) * 2002-04-03 2004-06-22 Industrial Technology Research Institute Driving mechanism for optical head of optical disc driver
US6775063B2 (en) 2001-07-10 2004-08-10 Nikon Corporation Optical system and exposure apparatus having the optical system
US6831731B2 (en) 2001-06-28 2004-12-14 Nikon Corporation Projection optical system and an exposure apparatus with the projection optical system
US6844982B2 (en) 2002-04-26 2005-01-18 Nikon Corporation Projection optical system, exposure system provided with the projection optical system, and exposure method using the projection optical system
US6844915B2 (en) 2001-08-01 2005-01-18 Nikon Corporation Optical system and exposure apparatus provided with the optical system
US6870668B2 (en) 2000-10-10 2005-03-22 Nikon Corporation Method for evaluating image formation performance
US6917458B2 (en) 2001-06-01 2005-07-12 Asml Netherlands B.V. Correction of birefringence in cubic crystalline optical systems
US6958864B2 (en) 2002-08-22 2005-10-25 Asml Netherlands B.V. Structures and methods for reducing polarization aberration in integrated circuit fabrication systems
WO2005071671A3 (en) * 2004-01-16 2005-10-27 Koninkl Philips Electronics Nv Optical system
US6970232B2 (en) 2001-10-30 2005-11-29 Asml Netherlands B.V. Structures and methods for reducing aberration in integrated circuit fabrication systems
US6995908B2 (en) 2001-10-30 2006-02-07 Asml Netherlands B.V. Methods for reducing aberration in optical systems
EP1780570A3 (en) * 2001-06-01 2008-01-02 ASML Netherlands B.V. Correction of birefringence in cubic crystalline optical systems
WO2008012022A1 (de) 2006-07-24 2008-01-31 Carl Zeiss Smt Ag Optische vorrichtung und verfahren zur korrektur bzw. verbesserung des abbildungsverhaltens einer solchen vorrichtung
DE102006047665A1 (de) * 2006-09-28 2008-04-03 Carl Zeiss Smt Ag Optisches System für eine Mikrolithographieanlage mit verbesserten Abbildungseigenschaften und Verfahren zum Verbessern der Abbildungseigenschaften des optischen Systems
DE102007014587A1 (de) 2007-03-23 2008-09-25 Carl Zeiss Smt Ag Doppelbrechende Verzögerungsplattenanordnung
US7453641B2 (en) 2001-10-30 2008-11-18 Asml Netherlands B.V. Structures and methods for reducing aberration in optical systems
DE102008054818A1 (de) 2008-01-29 2009-07-30 Carl Zeiss Smt Ag Verfahren zum Manipulieren eines optischen Systems, sowie optisches System
US20100045952A1 (en) * 2003-05-30 2010-02-25 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus
US7940375B2 (en) 2004-03-04 2011-05-10 Carl Zeiss Smt Gmbh Transmission filter apparatus
US8854602B2 (en) * 2003-11-24 2014-10-07 Asml Netherlands B.V. Holding device for an optical element in an objective

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DE10133841A1 (de) 2001-07-18 2003-02-06 Zeiss Carl Objektiv mit Kristall-Linsen
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DE10258715B4 (de) 2002-12-10 2006-12-21 Carl Zeiss Smt Ag Verfahren zur Herstellung eines optischen Abbildungssystems
KR101547077B1 (ko) 2003-04-09 2015-08-25 가부시키가이샤 니콘 노광 방법 및 장치, 그리고 디바이스 제조 방법
DE10328938A1 (de) * 2003-06-27 2005-01-20 Carl Zeiss Smt Ag Korrektureinrichtung zur Kompensation von Störungen der Polarisationsverteilung sowie Projektionsobjektiv für die Mikrolithografie
DE10344010A1 (de) * 2003-09-15 2005-04-07 Carl Zeiss Smt Ag Wabenkondensor und Beleuchtungssystem damit
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KR20030019577A (ko) 2003-03-06
US20050264786A1 (en) 2005-12-01
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JP2004525527A (ja) 2004-08-19
US7170585B2 (en) 2007-01-30
WO2002093257A3 (de) 2003-09-25
US6879379B2 (en) 2005-04-12
DE10123725A1 (de) 2002-11-21
WO2002093257A8 (de) 2003-12-31
EP1390813A2 (de) 2004-02-25
TWI266149B (en) 2006-11-11

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