WO2002093257A8 - Projektionsbelichtungsanlage der mikrolithographie, - Google Patents

Projektionsbelichtungsanlage der mikrolithographie,

Info

Publication number
WO2002093257A8
WO2002093257A8 PCT/EP2002/004900 EP0204900W WO02093257A8 WO 2002093257 A8 WO2002093257 A8 WO 2002093257A8 EP 0204900 W EP0204900 W EP 0204900W WO 02093257 A8 WO02093257 A8 WO 02093257A8
Authority
WO
WIPO (PCT)
Prior art keywords
illumination system
projection illumination
microlithographic projection
pupil
plane
Prior art date
Application number
PCT/EP2002/004900
Other languages
English (en)
French (fr)
Other versions
WO2002093257A2 (de
WO2002093257A3 (de
Inventor
Martin Brunotte
Juergen Hartmaier
Hubert Holderer
Winfried Kaiser
Alexander Kohl
Jens Kugler
Manfred Maul
Christian Wagner
Original Assignee
Zeiss Carl Smt Ag
Martin Brunotte
Juergen Hartmaier
Hubert Holderer
Winfried Kaiser
Alexander Kohl
Jens Kugler
Manfred Maul
Christian Wagner
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zeiss Carl Smt Ag, Martin Brunotte, Juergen Hartmaier, Hubert Holderer, Winfried Kaiser, Alexander Kohl, Jens Kugler, Manfred Maul, Christian Wagner filed Critical Zeiss Carl Smt Ag
Priority to JP2002589877A priority Critical patent/JP2004525527A/ja
Priority to EP02769464A priority patent/EP1390813A2/de
Priority to KR10-2003-7000622A priority patent/KR20030019577A/ko
Publication of WO2002093257A2 publication Critical patent/WO2002093257A2/de
Publication of WO2002093257A3 publication Critical patent/WO2002093257A3/de
Priority to US10/714,573 priority patent/US6879379B2/en
Publication of WO2002093257A8 publication Critical patent/WO2002093257A8/de
Priority to US10/906,737 priority patent/US20050134967A1/en
Priority to US11/101,235 priority patent/US7170585B2/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00—Projectors or projection-type viewers; Accessories therefor
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/08—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of polarising materials
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/02—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of crystals, e.g. rock-salt, semi-conductors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/30—Polarising elements
    • G02B5/3083—Birefringent or phase retarding elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G03F7/70966—Birefringence

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Epidemiology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lenses (AREA)
  • Lens Barrels (AREA)

Abstract

Bei einer Projektionsbelichtungsanlage besonders mit 157 oder 193 nm und bildseitigen NA von 0,8 bis 0,95, mit Fluorid-Kristallinsen (43, 43) wird deren winkelabhängige Doppelbrechung durch Relativdrehung um die optische Achse (O) und/oder durch ein Korrekturelement (44) nahe einer Pupillenenbene (P) in ihrem störenden Effekt vermindert.
PCT/EP2002/004900 2001-05-15 2002-05-04 Projektionsbelichtungsanlage der mikrolithographie, WO2002093257A2 (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2002589877A JP2004525527A (ja) 2001-05-15 2002-05-04 マイクロリソグラフィーの投射露光装置、光学システム、マイクロリソグラフィー投射レンズの製造方法、およびマイクロリソグラフィーによる構造化方法
EP02769464A EP1390813A2 (de) 2001-05-15 2002-05-04 Projektionsbelichtungsanlage der mikrolithographie
KR10-2003-7000622A KR20030019577A (ko) 2001-05-15 2002-05-04 마이크로리토그래피 투사 조명 시설, 광학 시스템,마이크로리토그래피-렌즈 시스템의 제조 방법 및마이크로리토그래픽 구조화 방법
US10/714,573 US6879379B2 (en) 2001-05-15 2003-11-14 Projection lens and microlithographic projection exposure apparatus
US10/906,737 US20050134967A1 (en) 2001-05-15 2005-03-03 Projection lens and microlithographic projection exposure apparatus
US11/101,235 US7170585B2 (en) 2001-05-15 2005-04-07 Projection lens and microlithographic projection exposure apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10123725A DE10123725A1 (de) 2001-05-15 2001-05-15 Projektionsbelichtungsanlage der Mikrolithographie, Optisches System und Herstellverfahren
DE10123725.1 2001-05-15

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/714,573 Continuation US6879379B2 (en) 2001-05-15 2003-11-14 Projection lens and microlithographic projection exposure apparatus

Publications (3)

Publication Number Publication Date
WO2002093257A2 WO2002093257A2 (de) 2002-11-21
WO2002093257A3 WO2002093257A3 (de) 2003-09-25
WO2002093257A8 true WO2002093257A8 (de) 2003-12-31

Family

ID=7684936

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2002/004900 WO2002093257A2 (de) 2001-05-15 2002-05-04 Projektionsbelichtungsanlage der mikrolithographie,

Country Status (7)

Country Link
US (3) US6879379B2 (de)
EP (1) EP1390813A2 (de)
JP (1) JP2004525527A (de)
KR (1) KR20030019577A (de)
DE (1) DE10123725A1 (de)
TW (1) TWI266149B (de)
WO (1) WO2002093257A2 (de)

Families Citing this family (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100870585B1 (ko) 2000-10-10 2008-11-25 가부시키가이샤 니콘 결상성능의 평가방법
US7239447B2 (en) * 2001-05-15 2007-07-03 Carl Zeiss Smt Ag Objective with crystal lenses
JP2004526331A (ja) * 2001-05-15 2004-08-26 カール・ツアイス・エスエムテイ・アーゲー フッ化物結晶レンズを含む対物レンズ
US6683710B2 (en) 2001-06-01 2004-01-27 Optical Research Associates Correction of birefringence in cubic crystalline optical systems
EP1780570A3 (de) * 2001-06-01 2008-01-02 ASML Netherlands B.V. Kompensation der Doppelbrechung in kubisch kristallinen Projektionslinsen und optischen Systemen
US6831731B2 (en) 2001-06-28 2004-12-14 Nikon Corporation Projection optical system and an exposure apparatus with the projection optical system
US6775063B2 (en) 2001-07-10 2004-08-10 Nikon Corporation Optical system and exposure apparatus having the optical system
DE10133841A1 (de) 2001-07-18 2003-02-06 Zeiss Carl Objektiv mit Kristall-Linsen
US6844915B2 (en) 2001-08-01 2005-01-18 Nikon Corporation Optical system and exposure apparatus provided with the optical system
US6970232B2 (en) 2001-10-30 2005-11-29 Asml Netherlands B.V. Structures and methods for reducing aberration in integrated circuit fabrication systems
US6995908B2 (en) 2001-10-30 2006-02-07 Asml Netherlands B.V. Methods for reducing aberration in optical systems
US7453641B2 (en) 2001-10-30 2008-11-18 Asml Netherlands B.V. Structures and methods for reducing aberration in optical systems
TW583657B (en) * 2002-04-03 2004-04-11 Ind Tech Res Inst Driving structure of optical head
JP4333078B2 (ja) 2002-04-26 2009-09-16 株式会社ニコン 投影光学系、該投影光学系を備えた露光装置および該投影光学系を用いた露光方法並びにデバイス製造方法
US6958864B2 (en) 2002-08-22 2005-10-25 Asml Netherlands B.V. Structures and methods for reducing polarization aberration in integrated circuit fabrication systems
KR20050057110A (ko) * 2002-09-03 2005-06-16 칼 짜이스 에스엠테 아게 복굴절 렌즈를 구비한 대물렌즈
AU2003298405A1 (en) 2002-09-03 2004-03-29 Carl Zeiss Smt Ag Optimization method for an objective with fluoride crystal lenses and objective with fluoride crystal lenses
DE10258715B4 (de) * 2002-12-10 2006-12-21 Carl Zeiss Smt Ag Verfahren zur Herstellung eines optischen Abbildungssystems
KR101484435B1 (ko) 2003-04-09 2015-01-19 가부시키가이샤 니콘 노광 방법 및 장치, 그리고 디바이스 제조 방법
DE10324477A1 (de) * 2003-05-30 2004-12-30 Carl Zeiss Smt Ag Mikrolithographische Projektionsbelichtungsanlage
DE10328938A1 (de) * 2003-06-27 2005-01-20 Carl Zeiss Smt Ag Korrektureinrichtung zur Kompensation von Störungen der Polarisationsverteilung sowie Projektionsobjektiv für die Mikrolithografie
DE10344010A1 (de) * 2003-09-15 2005-04-07 Carl Zeiss Smt Ag Wabenkondensor und Beleuchtungssystem damit
TWI609409B (zh) 2003-10-28 2017-12-21 尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造方法
TWI385414B (zh) 2003-11-20 2013-02-11 尼康股份有限公司 光學照明裝置、照明方法、曝光裝置、曝光方法以及元件製造方法
EP1695148B1 (de) * 2003-11-24 2015-10-28 Carl Zeiss SMT GmbH Immersionsobjektiv
US7466489B2 (en) 2003-12-15 2008-12-16 Susanne Beder Projection objective having a high aperture and a planar end surface
JP5102492B2 (ja) 2003-12-19 2012-12-19 カール・ツァイス・エスエムティー・ゲーエムベーハー 結晶素子を有するマイクロリソグラフィー投影用対物レンズ
US7460206B2 (en) * 2003-12-19 2008-12-02 Carl Zeiss Smt Ag Projection objective for immersion lithography
KR20070015369A (ko) * 2004-01-16 2007-02-02 코닌클리케 필립스 일렉트로닉스 엔.브이. 광학 시스템
TWI505329B (zh) 2004-02-06 2015-10-21 尼康股份有限公司 光學照明裝置、曝光裝置、曝光方法以及元件製造方法
DE102004011733A1 (de) 2004-03-04 2005-09-22 Carl Zeiss Smt Ag Transmissionsfiltervorrichtung
US8212988B2 (en) 2004-08-06 2012-07-03 Carl Zeiss GmbH Projection objective for microlithography
JPWO2006016469A1 (ja) * 2004-08-10 2008-05-01 株式会社ニコン 照明光学装置、露光装置、および露光方法
US20060204204A1 (en) * 2004-12-20 2006-09-14 Markus Zenzinger Method for improving the optical polarization properties of a microlithographic projection exposure apparatus
US20070115551A1 (en) * 2005-04-01 2007-05-24 Alexis Spilman Space-variant waveplate for polarization conversion, methods and applications
DE102006021334B3 (de) * 2006-05-05 2007-08-30 Carl Zeiss Smt Ag Polarisationsbeeinflussendes optisches Element sowie Verfahren zu dessen Herstellung sowie optisches System und mikrolithographische Projektionsbelichtungsanlage mit einem solchen Element
CN101467090A (zh) * 2006-06-16 2009-06-24 卡尔蔡司Smt股份公司 微平版印刷投影曝光装置的投影物镜
DE102006034755A1 (de) * 2006-07-24 2008-01-31 Carl Zeiss Smt Ag Optische Vorrichtung sowie Verfahren zur Korrektur bzw. Verbesserung des Abbildungsverhaltens einer optischen Vorrichtung
DE102006047665A1 (de) * 2006-09-28 2008-04-03 Carl Zeiss Smt Ag Optisches System für eine Mikrolithographieanlage mit verbesserten Abbildungseigenschaften und Verfahren zum Verbessern der Abbildungseigenschaften des optischen Systems
DE102007014587A1 (de) 2007-03-23 2008-09-25 Carl Zeiss Smt Ag Doppelbrechende Verzögerungsplattenanordnung
US9018561B2 (en) * 2007-05-23 2015-04-28 Cymer, Llc High power seed/amplifier laser system with beam shaping intermediate the seed and amplifier
DE102007055567A1 (de) * 2007-11-20 2009-05-28 Carl Zeiss Smt Ag Optisches System
DE102008054818A1 (de) 2008-01-29 2009-07-30 Carl Zeiss Smt Ag Verfahren zum Manipulieren eines optischen Systems, sowie optisches System
JP2011528859A (ja) * 2008-07-21 2011-11-24 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置用の光学素子マウント
US8504328B2 (en) 2010-05-21 2013-08-06 Eastman Kodak Company Designing lenses using stress birefringence performance criterion
US8287129B2 (en) 2010-05-21 2012-10-16 Eastman Kodak Company Low thermal stress birefringence imaging system
US8649094B2 (en) 2010-05-21 2014-02-11 Eastman Kodak Company Low thermal stress birefringence imaging lens
US8786943B2 (en) 2011-10-27 2014-07-22 Eastman Kodak Company Low thermal stress catadioptric imaging system
US8830580B2 (en) 2011-10-27 2014-09-09 Eastman Kodak Company Low thermal stress catadioptric imaging optics
DE102013109274B3 (de) * 2013-08-27 2014-10-16 Jenoptik Optical Systems Gmbh Thermisch kompensierte optische Baugruppe mit einem zwischen Wälzkörpern gelagerten optischen Element
DE102016215540A1 (de) * 2016-08-18 2018-02-22 Carl Zeiss Smt Gmbh Optisches system, lithographieanlage sowie verfahren
US10732336B2 (en) * 2017-02-02 2020-08-04 Corning Incorporated Method of assembling optical systems and minimizing retardance distortions in optical assemblies

Family Cites Families (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1332410A (en) 1919-03-22 1920-03-02 Oscero W Potts Lens and method of making the same
JPS5949508A (ja) 1982-09-14 1984-03-22 Sony Corp 複屈折板の製造方法
US4993823A (en) * 1989-06-29 1991-02-19 Eastman Kodak Company Method for correction of distortions of an imaging device
JPH06504137A (ja) 1990-03-15 1994-05-12 フィアーラ，ヴェルナー 複屈折度が調節可能な多焦点複屈曲レンズ
JP2894808B2 (ja) 1990-07-09 1999-05-24 旭光学工業株式会社 偏光を有する光学系
DE69127335T2 (de) 1990-10-08 1998-01-15 Canon Kk Projektionsbelichtungsapparat mit einer Vorrichtung zur Ausgleichung der Verzeichnung einer Projektionslinse
JP3368091B2 (ja) 1994-04-22 2003-01-20 キヤノン株式会社 投影露光装置及びデバイスの製造方法
JP3534363B2 (ja) 1995-07-31 2004-06-07 パイオニア株式会社 結晶レンズ及びこれを用いた光ピックアップ光学系
DE19535392A1 (de) 1995-09-23 1997-03-27 Zeiss Carl Fa Radial polarisationsdrehende optische Anordnung und Mikrolithographie-Projektionsbelichtungsanlage damit
JP3623032B2 (ja) 1995-12-15 2005-02-23 フジノン佐野株式会社 複屈折板およびこれを用いた光学系
DE19637563A1 (de) 1996-09-14 1998-03-19 Zeiss Carl Fa Doppelbrechende Planplattenanordnung und DUV-Viertelwellenplatte
DE19704936A1 (de) 1997-02-10 1998-08-13 Zeiss Carl Fa Optisches Glied und Herstellverfahren
US6829041B2 (en) * 1997-07-29 2004-12-07 Canon Kabushiki Kaisha Projection optical system and projection exposure apparatus having the same
JP3413067B2 (ja) * 1997-07-29 2003-06-03 キヤノン株式会社 投影光学系及びそれを用いた投影露光装置
DE19807120A1 (de) 1998-02-20 1999-08-26 Zeiss Carl Fa Optisches System mit Polarisationskompensator
US6201634B1 (en) * 1998-03-12 2001-03-13 Nikon Corporation Optical element made from fluoride single crystal, method for manufacturing optical element, method for calculating birefringence of optical element and method for determining direction of minimum birefringence of optical element
JP3031375B2 (ja) * 1998-04-23 2000-04-10 キヤノン株式会社 レンズ鏡筒及びそれを用いた投影露光装置
DE19824030A1 (de) * 1998-05-29 1999-12-02 Zeiss Carl Fa Katadioptrisches Projektionsobjektiv mit adaptivem Spiegel und Projektionsbelichtungsverfahren
US6248486B1 (en) 1998-11-23 2001-06-19 U.S. Philips Corporation Method of detecting aberrations of an optical imaging system
US6368763B2 (en) 1998-11-23 2002-04-09 U.S. Philips Corporation Method of detecting aberrations of an optical imaging system
DE19942281A1 (de) 1999-05-14 2000-11-16 Zeiss Carl Fa Projektionsobjektiv
DE19859634A1 (de) * 1998-12-23 2000-06-29 Zeiss Carl Fa Optisches System, insbesondere Projektionsbelichtungsanlage der Mikrolithographie
CN1293822A (zh) 1999-01-06 2001-05-02 株式会社尼康 投影光学系统、投影光学系统的制造方法和使用该光学系统的投影曝光装置
JP2000331927A (ja) * 1999-03-12 2000-11-30 Canon Inc 投影光学系及びそれを用いた投影露光装置
EP1224497A4 (de) 1999-06-25 2003-08-27 Corning Inc Linsenelementen für vuv-mikrolithographie von doppelbrechung-minimierenden fluoridkristallen und rohlingen dafür
DE19929403A1 (de) 1999-06-26 2000-12-28 Zeiss Carl Fa Objektiv, insbesondere Objektiv für eine Halbleiter-Lithographie-Projektionsbelichtungsanlage und Herstellungverfahren
EP1139138A4 (de) 1999-09-29 2006-03-08 Nikon Corp Projektionsbelichtungsverfahren, vorrichtung und optisches projektionssystem
JP2001108801A (ja) 1999-10-08 2001-04-20 Tsuguo Fukuda 真空紫外領域用光学部材および光学部材用コーティング材
DE50012452D1 (de) 1999-12-29 2006-05-11 Zeiss Carl Smt Ag Projektionsobjektiv mit benachbart angeordneten asphärischen linsenoberflächen
DE10000193B4 (de) 2000-01-05 2007-05-03 Carl Zeiss Smt Ag Optisches System
US6397401B2 (en) * 2000-05-02 2002-06-04 Timothy A. Belcher 2-layer firefighter garment
US7239447B2 (en) * 2001-05-15 2007-07-03 Carl Zeiss Smt Ag Objective with crystal lenses
CN1514943A (zh) 2001-05-16 2004-07-21 康宁股份有限公司 来自立方体材料的较佳晶体取向光学元件
JP2003050349A (ja) 2001-05-30 2003-02-21 Nikon Corp 光学系および該光学系を備えた露光装置
US6683710B2 (en) 2001-06-01 2004-01-27 Optical Research Associates Correction of birefringence in cubic crystalline optical systems
JP3639807B2 (ja) 2001-06-27 2005-04-20 キヤノン株式会社 光学素子及び製造方法
JPWO2003003429A1 (ja) 2001-06-28 2004-10-21 株式会社ニコン 投影光学系、露光装置および方法
TW571344B (en) 2001-07-10 2004-01-11 Nikon Corp Manufacturing method for projection optic system
US6775063B2 (en) 2001-07-10 2004-08-10 Nikon Corporation Optical system and exposure apparatus having the optical system
US6788389B2 (en) 2001-07-10 2004-09-07 Nikon Corporation Production method of projection optical system
US6994747B2 (en) 2001-07-17 2006-02-07 Nikon Corporation Method for producing optical member
US6785051B2 (en) 2001-07-18 2004-08-31 Corning Incorporated Intrinsic birefringence compensation for below 200 nanometer wavelength optical lithography components with cubic crystalline structures
JP2003050993A (ja) 2001-08-06 2003-02-21 Omron Corp 指紋読取方法および指紋読取装置
FR2828933A1 (fr) 2001-08-27 2003-02-28 Corning Inc Procede de determination de la qualite optique d'un monocristal de fluorure et element optique
US6970232B2 (en) 2001-10-30 2005-11-29 Asml Netherlands B.V. Structures and methods for reducing aberration in integrated circuit fabrication systems
US6995908B2 (en) * 2001-10-30 2006-02-07 Asml Netherlands B.V. Methods for reducing aberration in optical systems
US6844972B2 (en) 2001-10-30 2005-01-18 Mcguire, Jr. James P. Reducing aberration in optical systems comprising cubic crystalline optical elements
US7453641B2 (en) 2001-10-30 2008-11-18 Asml Netherlands B.V. Structures and methods for reducing aberration in optical systems
WO2003038479A2 (en) 2001-10-30 2003-05-08 Optical Research Associates Structures and methods for reducing aberration in optical systems
JP2003161882A (ja) 2001-11-29 2003-06-06 Nikon Corp 投影光学系、露光装置および露光方法
JP3741208B2 (ja) 2001-11-29 2006-02-01 株式会社ニコン 光リソグラフィー用光学部材及びその評価方法
US7075721B2 (en) * 2002-03-06 2006-07-11 Corning Incorporated Compensator for radially symmetric birefringence
JP2003309059A (ja) 2002-04-17 2003-10-31 Nikon Corp 投影光学系、その製造方法、露光装置および露光方法
DE10329360B4 (de) 2002-07-01 2008-08-28 Canon K.K. Doppelbrechungsmessgerät, Spannungsentfernungseinrichtung, Polarimeter und Belichtungsgerät
US6958864B2 (en) 2002-08-22 2005-10-25 Asml Netherlands B.V. Structures and methods for reducing polarization aberration in integrated circuit fabrication systems
JP4078161B2 (ja) 2002-09-12 2008-04-23 キヤノン株式会社 蛍石とその製造方法
JP4455024B2 (ja) 2002-12-13 2010-04-21 キヤノン株式会社 複屈折測定装置

Also Published As

Publication number Publication date
DE10123725A1 (de) 2002-11-21
US7170585B2 (en) 2007-01-30
US20050264786A1 (en) 2005-12-01
EP1390813A2 (de) 2004-02-25
US20050134967A1 (en) 2005-06-23
US6879379B2 (en) 2005-04-12
WO2002093257A2 (de) 2002-11-21
JP2004525527A (ja) 2004-08-19
KR20030019577A (ko) 2003-03-06
TWI266149B (en) 2006-11-11
WO2002093257A3 (de) 2003-09-25
US20040150806A1 (en) 2004-08-05

Similar Documents

Publication Publication Date Title
WO2002093257A3 (de) Projektionsbelichtungsanlage der mikrolithographie,
WO2002093209A3 (de) Objektiv mit fluorid-kristall-linsen
WO2002099500A3 (en) Correction of birefringence in cubic crystalline projection lenses and optical systems
WO2001047449A8 (en) Myopia progression retardation by optical defect correction
WO2003016977A3 (en) Objective with pupil obscuration
WO2005059645A3 (en) Microlithography projection objective with crystal elements
WO2003003072A3 (en) Optical element and manufacturing method therefor
CS41589A3 (en) Multifocal non-achromatic double refracting lens system
WO2002044786A3 (en) Catadioptric projection system for 157 nm lithography
BR0316910A (pt) Poliureiauretano contendo enxofre, método para a preparação de um poliureiauretano contendo enxofre, artigo ótico, lente oftálmica e artigo fotocrÈmico
WO2001081977A3 (en) Optical reduction system with control of illumination polarization
BRPI0411406A (pt) lente ocular tendo seletiva resposta espectral
WO2010054268A3 (en) Optical angular measurement system for ophthalmic applications and method for positioning of a toric intraocular lens with increased accuracy
CA2533544A1 (en) Primary and supplemental intraocular lens system
NO961803L (no) Asfærisk torisk linse
TW200606453A (en) Image projection device
DE3885806D1 (de) Brillenglas mit astigmatischer Wirkung.
BR0214095A (pt) Processo para fabricação de lentes multifocais
WO2006050029A3 (en) Apochromatic unit-magnification projection optical system
WO2003077007A3 (de) Objektiv mit kristall-linsen
AU2002348368A1 (en) Disposable ophthalmic lens
EP1026548A3 (de) Optisches Element für Photolithographie und photolithographischer Apparat
ATE359240T1 (de) Optisches glas mit niedriger fotoelastischer konstante
CA2348404A1 (en) Custom sunglass clip assembly
ATE370437T1 (de) Brillen mit modifizierter lichttransmission

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): JP KR US

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 1020037000622

Country of ref document: KR

WWP Wipo information: published in national office

Ref document number: 1020037000622

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 2002769464

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 2002589877

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 10714573

Country of ref document: US

WWP Wipo information: published in national office

Ref document number: 2002769464

Country of ref document: EP