WO2002093209A3 - Objektiv mit fluorid-kristall-linsen - Google Patents

Objektiv mit fluorid-kristall-linsen Download PDF

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Publication number
WO2002093209A3
WO2002093209A3 PCT/EP2002/005050 EP0205050W WO02093209A3 WO 2002093209 A3 WO2002093209 A3 WO 2002093209A3 EP 0205050 W EP0205050 W EP 0205050W WO 02093209 A3 WO02093209 A3 WO 02093209A3
Authority
WO
WIPO (PCT)
Prior art keywords
lens
lenses
fluoride crystal
crystal
twisted
Prior art date
Application number
PCT/EP2002/005050
Other languages
English (en)
French (fr)
Other versions
WO2002093209A2 (de
Inventor
Daniel Kraehmer
Toralf Gruner
Wilhelm Ulrich
Birgit Enkisch
Michael Gerhard
Martin Brunotte
Christian Wagner
Winfried Kaiser
Manfred Maul
Christoph Zaczek
Original Assignee
Zeiss Carl
Zeiss Carl Smt Ag
Daniel Kraehmer
Toralf Gruner
Wilhelm Ulrich
Birgit Enkisch
Michael Gerhard
Martin Brunotte
Christian Wagner
Winfried Kaiser
Manfred Maul
Christoph Zaczek
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE2001123727 external-priority patent/DE10123727A1/de
Priority claimed from DE10123725A external-priority patent/DE10123725A1/de
Priority claimed from DE2001125487 external-priority patent/DE10125487A1/de
Priority claimed from DE2001127320 external-priority patent/DE10127320A1/de
Priority claimed from DE2002110782 external-priority patent/DE10210782A1/de
Priority to EP02738037A priority Critical patent/EP1390783A2/de
Priority to KR10-2003-7015260A priority patent/KR20040015251A/ko
Priority to JP2002589833A priority patent/JP2004526331A/ja
Application filed by Zeiss Carl, Zeiss Carl Smt Ag, Daniel Kraehmer, Toralf Gruner, Wilhelm Ulrich, Birgit Enkisch, Michael Gerhard, Martin Brunotte, Christian Wagner, Winfried Kaiser, Manfred Maul, Christoph Zaczek filed Critical Zeiss Carl
Priority to CNB02828920XA priority patent/CN1327294C/zh
Priority to JP2004504053A priority patent/JP2005524985A/ja
Priority to KR10-2004-7017804A priority patent/KR20050003410A/ko
Priority to EP02807393A priority patent/EP1502157A1/de
Priority to AU2002356590A priority patent/AU2002356590A1/en
Priority to PCT/EP2002/012690 priority patent/WO2003096124A1/de
Publication of WO2002093209A2 publication Critical patent/WO2002093209A2/de
Priority to US10/367,989 priority patent/US7145720B2/en
Publication of WO2002093209A3 publication Critical patent/WO2002093209A3/de
Priority to US10/817,527 priority patent/US7180667B2/en
Priority to US10/931,745 priority patent/US7239447B2/en
Priority to US10/983,569 priority patent/US7292388B2/en
Priority to US11/029,788 priority patent/US7126765B2/en
Priority to US11/392,027 priority patent/US7382536B2/en
Priority to US11/765,200 priority patent/US20070242250A1/en
Priority to US11/864,193 priority patent/US7672044B2/en

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00Simple or compound lenses
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G03F7/70966Birefringence
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/02Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of crystals, e.g. rock-salt, semi-conductors
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/08Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of polarising materials
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/30Polarising elements
    • G02B5/3083Birefringent or phase retarding elements
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70225Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70241Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566Polarisation control
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S359/00Optical: systems and elements
    • Y10S359/90Methods

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Public Health (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

Objektiv, insbesondere Projektionsobjektiv für eine Mikrolithographie-Projektionsbelichtungsanlage mit mindestens einer Fluorid-Kristall-Linse. Eine Reduzierung des störenden Einflusses der Doppelbrechung erzielt man, wenn diese Linse eine (100)-Linse mit einer Linsenachse ist, welche annähernd senkrecht auf den{100}-Kristallebenen oder auf den dazu äquivalenten Kristallebenen des Fluorid-Kristalls steht. Bei Objektiven mit mindestens zwei Fluorid-Kristall-Linsen ist es günstig, wenn die Fluorid-Kristall-Linsen gegeneinander verdreht angeordnet sind. Die Linsenachsen der Fluorid-Kristall-Linsen können dabei neben der (100)-Kristallrichtung auch in die (111)-oder in die (110)-Kristallrichtung weisen. Eine weitere Reduzierung des störenden Einflusses der Doppelbrechung erzielt man durch den gleichzeitigen Einsatz von Gruppen mit gegeneinander verdrehten (100)-Linsen und Gruppen mit gegeneinander verdrehten (111)-Linsen oder (110)-Linsen. Eine weitere Reduzierung des störenden Einflusses der Doppelbrechung erzielt man durch die Belegung eines optischen Elements mit einer Kompensations-Beschichtung.
PCT/EP2002/005050 2001-05-15 2002-05-08 Objektiv mit fluorid-kristall-linsen WO2002093209A2 (de)

Priority Applications (17)

Application Number Priority Date Filing Date Title
EP02738037A EP1390783A2 (de) 2001-05-15 2002-05-08 Objektiv mit fluorid-kristall-linsen
KR10-2003-7015260A KR20040015251A (ko) 2001-05-15 2002-05-08 불화물 결정 렌즈들을 포함하는 렌즈 시스템
JP2002589833A JP2004526331A (ja) 2001-05-15 2002-05-08 フッ化物結晶レンズを含む対物レンズ
PCT/EP2002/012690 WO2003096124A1 (de) 2002-05-08 2002-11-13 Linse aus kristallmaterial
AU2002356590A AU2002356590A1 (en) 2002-05-08 2002-11-13 Lens consisting of a crystalline material
CNB02828920XA CN1327294C (zh) 2002-05-08 2002-11-13 用晶体材料制造透镜
EP02807393A EP1502157A1 (de) 2002-05-08 2002-11-13 Linse aus kristallmaterial
KR10-2004-7017804A KR20050003410A (ko) 2002-05-08 2002-11-13 결정물질로 이루어진 렌즈
JP2004504053A JP2005524985A (ja) 2002-05-08 2002-11-13 結晶材料からなるレンズ
US10/367,989 US7145720B2 (en) 2001-05-15 2003-02-12 Objective with fluoride crystal lenses
US10/817,527 US7180667B2 (en) 2001-05-15 2004-04-01 Objective with fluoride crystal lenses
US10/931,745 US7239447B2 (en) 2001-05-15 2004-09-01 Objective with crystal lenses
US10/983,569 US7292388B2 (en) 2002-05-08 2004-11-08 Lens made of a crystalline material
US11/029,788 US7126765B2 (en) 2001-05-15 2005-01-05 Objective with fluoride crystal lenses
US11/392,027 US7382536B2 (en) 2001-05-15 2006-03-29 Objective with fluoride crystal lenses
US11/765,200 US20070242250A1 (en) 2001-05-15 2007-06-19 Objective with crystal lenses
US11/864,193 US7672044B2 (en) 2002-05-08 2007-09-28 Lens made of a crystalline material

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
DE10123727.8 2001-05-15
DE10123725.1 2001-05-15
DE2001123727 DE10123727A1 (de) 2001-05-15 2001-05-15 Optisches Element, Projektionsobjektiv und Mikrolithographie-Projektionsbelichtungsanlage mit Fluoridkristall-Linsen
DE10123725A DE10123725A1 (de) 2001-05-15 2001-05-15 Projektionsbelichtungsanlage der Mikrolithographie, Optisches System und Herstellverfahren
DE10125487.3 2001-05-23
DE2001125487 DE10125487A1 (de) 2001-05-23 2001-05-23 Optisches Element, Projektionsobjektiv und Mikrolithographic-Projektionsbelichtungsanlage mit Fluoridkristall-Linsen
DE10127320.7 2001-06-06
DE2001127320 DE10127320A1 (de) 2001-06-06 2001-06-06 Objektiv mit Fluorid-Kristall-Linsen
DE2002110782 DE10210782A1 (de) 2002-03-12 2002-03-12 Objektiv mit Kristall-Linsen
DE10210782.3 2002-03-12

Related Child Applications (2)

Application Number Title Priority Date Filing Date
PCT/EP2002/012690 Continuation WO2003096124A1 (de) 2002-05-08 2002-11-13 Linse aus kristallmaterial
US10/367,989 Continuation US7145720B2 (en) 2001-05-15 2003-02-12 Objective with fluoride crystal lenses

Publications (2)

Publication Number Publication Date
WO2002093209A2 WO2002093209A2 (de) 2002-11-21
WO2002093209A3 true WO2002093209A3 (de) 2003-10-23

Family

ID=27512416

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2002/005050 WO2002093209A2 (de) 2001-05-15 2002-05-08 Objektiv mit fluorid-kristall-linsen

Country Status (6)

Country Link
US (4) US7145720B2 (de)
EP (1) EP1390783A2 (de)
JP (1) JP2004526331A (de)
KR (1) KR20040015251A (de)
TW (1) TW591242B (de)
WO (1) WO2002093209A2 (de)

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US9581911B2 (en) 2004-01-16 2017-02-28 Carl Zeiss Smt Gmbh Polarization-modulating optical element

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DE10210782A1 (de) * 2002-03-12 2003-10-09 Zeiss Carl Smt Ag Objektiv mit Kristall-Linsen
KR20040015251A (ko) * 2001-05-15 2004-02-18 칼 짜이스 에스엠티 아게 불화물 결정 렌즈들을 포함하는 렌즈 시스템
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US6683710B2 (en) 2001-06-01 2004-01-27 Optical Research Associates Correction of birefringence in cubic crystalline optical systems
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US6831731B2 (en) 2001-06-28 2004-12-14 Nikon Corporation Projection optical system and an exposure apparatus with the projection optical system
US6788389B2 (en) 2001-07-10 2004-09-07 Nikon Corporation Production method of projection optical system
US6775063B2 (en) 2001-07-10 2004-08-10 Nikon Corporation Optical system and exposure apparatus having the optical system
US6844915B2 (en) 2001-08-01 2005-01-18 Nikon Corporation Optical system and exposure apparatus provided with the optical system
US6970232B2 (en) 2001-10-30 2005-11-29 Asml Netherlands B.V. Structures and methods for reducing aberration in integrated circuit fabrication systems
US6995908B2 (en) 2001-10-30 2006-02-07 Asml Netherlands B.V. Methods for reducing aberration in optical systems
US6844972B2 (en) 2001-10-30 2005-01-18 Mcguire, Jr. James P. Reducing aberration in optical systems comprising cubic crystalline optical elements
US7453641B2 (en) 2001-10-30 2008-11-18 Asml Netherlands B.V. Structures and methods for reducing aberration in optical systems
JP4333078B2 (ja) 2002-04-26 2009-09-16 株式会社ニコン 投影光学系、該投影光学系を備えた露光装置および該投影光学系を用いた露光方法並びにデバイス製造方法
US7292388B2 (en) 2002-05-08 2007-11-06 Carl Zeiss Smt Ag Lens made of a crystalline material
JP2005524985A (ja) * 2002-05-08 2005-08-18 カール・ツアイス・エスエムテイ・アーゲー 結晶材料からなるレンズ
JP2004045692A (ja) * 2002-07-11 2004-02-12 Canon Inc 投影光学系、露光装置及びデバイス製造方法
US7075720B2 (en) 2002-08-22 2006-07-11 Asml Netherlands B.V. Structures and methods for reducing polarization aberration in optical systems
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WO2004023172A1 (de) * 2002-09-03 2004-03-18 Carl Zeiss Smt Ag Optimierverfahren für ein objektiv mit fluorid-kristall-linsen sowie objektiv mit fluorid-kristall-linsen
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US6954256B2 (en) * 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
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US7423727B2 (en) * 2005-01-25 2008-09-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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US20060238735A1 (en) * 2005-04-22 2006-10-26 Vladimir Kamenov Optical system of a projection exposure apparatus
JP2009505124A (ja) * 2005-08-10 2009-02-05 カール・ツァイス・エスエムティー・アーゲー 像投影システム、特に、マイクロリソグラフィ投影露光装置の投影対物レンズ
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EP1924890A1 (de) 2005-09-14 2008-05-28 Carl Zeiss SMT AG Optisches system eines mikrolithographischen belichtungssystems
JP5036732B2 (ja) * 2006-02-17 2012-09-26 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置の照明システム用の光結合器
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JP4872679B2 (ja) * 2006-02-24 2012-02-08 日立化成工業株式会社 フッ化物結晶の熱処理方法、フッ化物結晶の判別方法及びフッ化物結晶の加工方法
DE102006038398A1 (de) * 2006-08-15 2008-02-21 Carl Zeiss Smt Ag Projektionsobjektiv einer mikrolithographischen Projektionsbelichtungsanlage
JP2008216498A (ja) * 2007-03-01 2008-09-18 Canon Inc 投影光学系、露光装置及びデバイス製造方法
WO2008110501A1 (de) * 2007-03-13 2008-09-18 Carl Zeiss Smt Ag Projektionsobjektiv einer mikrolithographischen projektionsbelichtungsanlage
DE102007055063A1 (de) * 2007-11-16 2009-05-28 Carl Zeiss Smt Ag Beleuchtungseinrichtung einer mikrolithographischen Projektionsbelichtungsanlage
DE102008054682A1 (de) 2008-02-15 2009-08-20 Carl Zeiss Smt Ag Linse, insbesondere für ein Projektionsobjektiv einer mikrolithographischen Projektionsbelichtungsanlage
DE102008054683A1 (de) 2008-03-13 2009-09-17 Carl Zeiss Smt Ag Optisches System einer mikrolithographischen Projektionsbelichtungsanlage, sowie Verfahren zum Manipulieren der Abbildungseigenschaften eines optischen Systems
US8284815B2 (en) * 2008-10-21 2012-10-09 Cymer, Inc. Very high power laser chamber optical improvements
RU2482522C2 (ru) * 2011-06-16 2013-05-20 Открытое акционерное общество "Научно-исследовательский и технологический институт оптического материаловедения Всероссийского научного центра "Государственный оптический институт им С.И. Вавилова" (ОАО "НИТИОМ ВНЦ "ГОИ им. С.И. Вавилова") Плоская линза из лейкосапфира и способ ее получения
DE102012200368A1 (de) 2012-01-12 2013-07-18 Carl Zeiss Smt Gmbh Polarisationsbeeinflussende optische Anordnung, insbesondere in einer mikrolithographischen Projektionsbelichtungsanlage
DE102012212852A1 (de) 2012-07-23 2013-09-05 Carl Zeiss Smt Gmbh Optisches System, insbesondere einer mikrolithographischen Projektionsbelichtungsanlage
DE102012213553A1 (de) 2012-08-01 2013-08-22 Carl Zeiss Smt Gmbh Optisches System, insbesondere einer mikrolithographischen Projektionsbelichtungsanlage
DE102012216532A1 (de) 2012-09-17 2013-09-12 Carl Zeiss Smt Gmbh Optisches System, insbesondere einer mikrolithographischen Projektionsbelichtungsanlage
DE102012218125A1 (de) 2012-10-04 2013-11-07 Carl Zeiss Smt Gmbh Axikonsystem, insbesondere einer mikrolithographischen Projektionsbelichtungsanlage
DE102013108321B3 (de) * 2013-08-02 2014-10-23 Leibniz-Institut für Analytische Wissenschaften-ISAS-e.V. Fresnelsches-Parallelepiped

Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1332410A (en) * 1919-03-22 1920-03-02 Oscero W Potts Lens and method of making the same
EP0103485A1 (de) * 1982-09-14 1984-03-21 Sony Corporation Verfahren zur Herstellung von Platten mit Doppelbrechung und nach solchen Verfahren hergestellte Platten
WO1991014189A1 (de) * 1990-03-15 1991-09-19 Werner Fiala Multifokale doppelbrechende linse mit angepasster doppelbrechung
JPH09166710A (ja) * 1995-12-15 1997-06-24 Sano Fuji Koki Kk 複屈折板およびこれを用いた光学系
US5652745A (en) * 1990-07-09 1997-07-29 Asahi Kogaku Kogyo Kabushiki Kaisha Optical system using polarized light with prevention of effect of birefringence
EP0857985A1 (de) * 1997-02-10 1998-08-12 Carl Zeiss Optisches Glied und Herstellverfahren
DE19807120A1 (de) * 1998-02-20 1999-08-26 Zeiss Carl Fa Optisches System mit Polarisationskompensator
WO2000070407A1 (de) * 1999-05-14 2000-11-23 Carl Zeiss Projektionsobjektiv für die mikrolithographie
JP2000331927A (ja) * 1999-03-12 2000-11-30 Canon Inc 投影光学系及びそれを用いた投影露光装置
EP1063551A1 (de) * 1999-06-26 2000-12-27 Carl Zeiss Objektiv, insbesondere Objektiv für eine Halbleiter-Lithographie-Projektionsbelichtungsanlage und Herstellungsverfahren
WO2001001182A1 (en) * 1999-06-25 2001-01-04 Corning Incorporated Birefringence minimizing fluoride crystal optical vuv microlithography lens elements and optical blanks therefor
US6201634B1 (en) * 1998-03-12 2001-03-13 Nikon Corporation Optical element made from fluoride single crystal, method for manufacturing optical element, method for calculating birefringence of optical element and method for determining direction of minimum birefringence of optical element
JP2001108801A (ja) * 1999-10-08 2001-04-20 Tsuguo Fukuda 真空紫外領域用光学部材および光学部材用コーティング材
WO2001050171A1 (de) * 1999-12-29 2001-07-12 Carl Zeiss Projektionsobjektiv mit benachbart angeordneten asphärischen linsenoberflächen
WO2002093201A2 (en) * 2001-05-16 2002-11-21 Corning Incorporated Preferred crystal orientation optical elements from cubic materials
WO2002097508A1 (fr) * 2001-05-30 2002-12-05 Nikon Corporation Systeme optique et systeme d'exposition equipe du systeme optique
WO2002099500A2 (en) * 2001-06-01 2002-12-12 Optical Research Associates Correction of birefringence in cubic crystalline projection lenses and optical systems

Family Cites Families (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2934993A (en) * 1955-11-18 1960-05-03 Benjamin J Chromy Device for optical examination of gem materials
US2934933A (en) 1957-07-03 1960-05-03 Didier Werke Ag Bonded-wall structure for coke-oven chambers and the like
US2943993A (en) 1957-08-07 1960-07-05 Exxon Research Engineering Co Split return of solids to coker
JPS5418160U (de) * 1977-04-14 1979-02-06
JPH0652708B2 (ja) 1984-11-01 1994-07-06 株式会社ニコン 投影光学装置
US5042922A (en) * 1986-05-20 1991-08-27 Hughes Aircraft Company Method for improvidng the spatial resolution in an integrated adaptive optics apparatus
US4993823A (en) * 1989-06-29 1991-02-19 Eastman Kodak Company Method for correction of distortions of an imaging device
DE4022904C2 (de) 1990-07-16 2001-05-23 Siemens Ag Verfahren zum Anbringen einer die Orientierung des Kristallgitters einer Kristallscheibe angebenden Markierung
EP0480616B1 (de) 1990-10-08 1997-08-20 Canon Kabushiki Kaisha Projektionsbelichtungsapparat mit einer Vorrichtung zur Ausgleichung der Verzeichnung einer Projektionslinse
JPH0527200A (ja) 1991-07-18 1993-02-05 Fujitsu Ltd 偏波カプラ
US5677757A (en) 1994-03-29 1997-10-14 Nikon Corporation Projection exposure apparatus
US5625453A (en) 1993-10-26 1997-04-29 Canon Kabushiki Kaisha System and method for detecting the relative positional deviation between diffraction gratings and for measuring the width of a line constituting a diffraction grating
JP3368091B2 (ja) * 1994-04-22 2003-01-20 キヤノン株式会社 投影露光装置及びデバイスの製造方法
JP3534363B2 (ja) * 1995-07-31 2004-06-07 パイオニア株式会社 結晶レンズ及びこれを用いた光ピックアップ光学系
DE19535392A1 (de) 1995-09-23 1997-03-27 Zeiss Carl Fa Radial polarisationsdrehende optische Anordnung und Mikrolithographie-Projektionsbelichtungsanlage damit
DE19637563A1 (de) 1996-09-14 1998-03-19 Zeiss Carl Fa Doppelbrechende Planplattenanordnung und DUV-Viertelwellenplatte
JP3413067B2 (ja) 1997-07-29 2003-06-03 キヤノン株式会社 投影光学系及びそれを用いた投影露光装置
US6829041B2 (en) 1997-07-29 2004-12-07 Canon Kabushiki Kaisha Projection optical system and projection exposure apparatus having the same
JP3849996B2 (ja) 1997-09-30 2006-11-22 三井化学株式会社 単結晶光学素子の製造方法
JP3856265B2 (ja) 1998-03-12 2006-12-13 株式会社ニコン 光学素子の製造方法、光学素子の複屈折算出方法及び複屈折判定方法
JP3031375B2 (ja) * 1998-04-23 2000-04-10 キヤノン株式会社 レンズ鏡筒及びそれを用いた投影露光装置
KR100269244B1 (ko) 1998-05-28 2000-12-01 정선종 복굴절 물질로 만들어진 투과형 광학부품을 사용한 리소그래피장비용 광학계의 초점심도 확장 방법 및 장치
DE19824030A1 (de) 1998-05-29 1999-12-02 Zeiss Carl Fa Katadioptrisches Projektionsobjektiv mit adaptivem Spiegel und Projektionsbelichtungsverfahren
JP2000086394A (ja) 1998-09-17 2000-03-28 Natl Space Development Agency Of Japan 氷の結晶成長方向制御方法および氷の結晶成長実験装置
US6248486B1 (en) 1998-11-23 2001-06-19 U.S. Philips Corporation Method of detecting aberrations of an optical imaging system
US6368763B2 (en) * 1998-11-23 2002-04-09 U.S. Philips Corporation Method of detecting aberrations of an optical imaging system
DE19859634A1 (de) 1998-12-23 2000-06-29 Zeiss Carl Fa Optisches System, insbesondere Projektionsbelichtungsanlage der Mikrolithographie
KR20010088279A (ko) * 1999-01-06 2001-09-26 시마무라 테루오 투영광학계, 그 제조방법, 및 이를 사용한 투영노광장치
EP1200796A1 (de) 1999-07-02 2002-05-02 Cambridge Research & Instrumentation, Inc. Doppelbrechendes interferometer
EP1139138A4 (de) 1999-09-29 2006-03-08 Nikon Corp Projektionsbelichtungsverfahren, vorrichtung und optisches projektionssystem
US6324003B1 (en) * 1999-12-23 2001-11-27 Silicon Valley Group, Inc. Calcium fluoride (CaF2) stress plate and method of making the same
DE10000193B4 (de) 2000-01-05 2007-05-03 Carl Zeiss Smt Ag Optisches System
DE10123725A1 (de) * 2001-05-15 2002-11-21 Zeiss Carl Projektionsbelichtungsanlage der Mikrolithographie, Optisches System und Herstellverfahren
KR20040015251A (ko) * 2001-05-15 2004-02-18 칼 짜이스 에스엠티 아게 불화물 결정 렌즈들을 포함하는 렌즈 시스템
US7239447B2 (en) 2001-05-15 2007-07-03 Carl Zeiss Smt Ag Objective with crystal lenses
US20030011893A1 (en) * 2001-06-20 2003-01-16 Nikon Corporation Optical system and exposure apparatus equipped with the optical system
JP3639807B2 (ja) 2001-06-27 2005-04-20 キヤノン株式会社 光学素子及び製造方法
JPWO2003003429A1 (ja) 2001-06-28 2004-10-21 株式会社ニコン 投影光学系、露光装置および方法
US6831731B2 (en) * 2001-06-28 2004-12-14 Nikon Corporation Projection optical system and an exposure apparatus with the projection optical system
US7163649B2 (en) * 2001-07-09 2007-01-16 The United States Of America As Represented By The Secretary Of Commerce Minimizing spatial-dispersion-induced birefringence
US6788389B2 (en) * 2001-07-10 2004-09-07 Nikon Corporation Production method of projection optical system
US6775063B2 (en) * 2001-07-10 2004-08-10 Nikon Corporation Optical system and exposure apparatus having the optical system
TW571344B (en) 2001-07-10 2004-01-11 Nikon Corp Manufacturing method for projection optic system
JP4238727B2 (ja) 2001-07-17 2009-03-18 株式会社ニコン 光学部材の製造方法
US6785051B2 (en) * 2001-07-18 2004-08-31 Corning Incorporated Intrinsic birefringence compensation for below 200 nanometer wavelength optical lithography components with cubic crystalline structures
US6844915B2 (en) 2001-08-01 2005-01-18 Nikon Corporation Optical system and exposure apparatus provided with the optical system
US6646778B2 (en) * 2001-08-01 2003-11-11 Silicon Light Machines Grating light valve with encapsulated dampening gas
FR2828933A1 (fr) * 2001-08-27 2003-02-28 Corning Inc Procede de determination de la qualite optique d'un monocristal de fluorure et element optique
TW554412B (en) 2001-09-07 2003-09-21 Nikon Corp Optical system, projection optical system, exposure device having the projection optical system, and method for manufacturing micro device using the exposure device
EP1451619A4 (de) 2001-10-30 2007-10-03 Asml Netherlands Bv Strukturen und verfahren zur verringerung der aberration in optischen systemen
US6844972B2 (en) * 2001-10-30 2005-01-18 Mcguire, Jr. James P. Reducing aberration in optical systems comprising cubic crystalline optical elements
US6995908B2 (en) * 2001-10-30 2006-02-07 Asml Netherlands B.V. Methods for reducing aberration in optical systems
US7453641B2 (en) * 2001-10-30 2008-11-18 Asml Netherlands B.V. Structures and methods for reducing aberration in optical systems
US6970232B2 (en) * 2001-10-30 2005-11-29 Asml Netherlands B.V. Structures and methods for reducing aberration in integrated circuit fabrication systems
JP2003161882A (ja) 2001-11-29 2003-06-06 Nikon Corp 投影光学系、露光装置および露光方法
JP3741208B2 (ja) * 2001-11-29 2006-02-01 株式会社ニコン 光リソグラフィー用光学部材及びその評価方法
DE10162796B4 (de) 2001-12-20 2007-10-31 Carl Zeiss Smt Ag Verfahren zur Optimierung der Abbildungseigenschaften von mindestens zwei optischen Elementen sowie photolithographisches Fertigungsverfahren
US7075721B2 (en) * 2002-03-06 2006-07-11 Corning Incorporated Compensator for radially symmetric birefringence
JP2003309059A (ja) * 2002-04-17 2003-10-31 Nikon Corp 投影光学系、その製造方法、露光装置および露光方法
US7251029B2 (en) * 2002-07-01 2007-07-31 Canon Kabushiki Kaisha Birefringence measurement apparatus, strain remover, polarimeter and exposure apparatus
US7075720B2 (en) * 2002-08-22 2006-07-11 Asml Netherlands B.V. Structures and methods for reducing polarization aberration in optical systems
JP4078161B2 (ja) * 2002-09-12 2008-04-23 キヤノン株式会社 蛍石とその製造方法
JP4455024B2 (ja) * 2002-12-13 2010-04-21 キヤノン株式会社 複屈折測定装置

Patent Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1332410A (en) * 1919-03-22 1920-03-02 Oscero W Potts Lens and method of making the same
EP0103485A1 (de) * 1982-09-14 1984-03-21 Sony Corporation Verfahren zur Herstellung von Platten mit Doppelbrechung und nach solchen Verfahren hergestellte Platten
WO1991014189A1 (de) * 1990-03-15 1991-09-19 Werner Fiala Multifokale doppelbrechende linse mit angepasster doppelbrechung
US5652745A (en) * 1990-07-09 1997-07-29 Asahi Kogaku Kogyo Kabushiki Kaisha Optical system using polarized light with prevention of effect of birefringence
JPH09166710A (ja) * 1995-12-15 1997-06-24 Sano Fuji Koki Kk 複屈折板およびこれを用いた光学系
EP0857985A1 (de) * 1997-02-10 1998-08-12 Carl Zeiss Optisches Glied und Herstellverfahren
DE19807120A1 (de) * 1998-02-20 1999-08-26 Zeiss Carl Fa Optisches System mit Polarisationskompensator
US6201634B1 (en) * 1998-03-12 2001-03-13 Nikon Corporation Optical element made from fluoride single crystal, method for manufacturing optical element, method for calculating birefringence of optical element and method for determining direction of minimum birefringence of optical element
JP2000331927A (ja) * 1999-03-12 2000-11-30 Canon Inc 投影光学系及びそれを用いた投影露光装置
WO2000070407A1 (de) * 1999-05-14 2000-11-23 Carl Zeiss Projektionsobjektiv für die mikrolithographie
WO2001001182A1 (en) * 1999-06-25 2001-01-04 Corning Incorporated Birefringence minimizing fluoride crystal optical vuv microlithography lens elements and optical blanks therefor
EP1063551A1 (de) * 1999-06-26 2000-12-27 Carl Zeiss Objektiv, insbesondere Objektiv für eine Halbleiter-Lithographie-Projektionsbelichtungsanlage und Herstellungsverfahren
JP2001108801A (ja) * 1999-10-08 2001-04-20 Tsuguo Fukuda 真空紫外領域用光学部材および光学部材用コーティング材
WO2001050171A1 (de) * 1999-12-29 2001-07-12 Carl Zeiss Projektionsobjektiv mit benachbart angeordneten asphärischen linsenoberflächen
WO2002093201A2 (en) * 2001-05-16 2002-11-21 Corning Incorporated Preferred crystal orientation optical elements from cubic materials
WO2002097508A1 (fr) * 2001-05-30 2002-12-05 Nikon Corporation Systeme optique et systeme d'exposition equipe du systeme optique
WO2002099500A2 (en) * 2001-06-01 2002-12-12 Optical Research Associates Correction of birefringence in cubic crystalline projection lenses and optical systems

Non-Patent Citations (10)

* Cited by examiner, † Cited by third party
Title
"Re:Birefringence of calcium fluoride", Chris Van Peski von International SEMATECH, Schreiben vom 07.05.01 zu Herstellern von Linsen *
BURNETT J H ET AL: "Intrinsic Birefringence in 157nm Materials", PROCEEDINGS OF THE INTERNATIONAL SYMPOSIUM ON 157NM LITHOGRAPHY, DANA POINT , CALIFORNIA, 15 May 2001 (2001-05-15), pages 1 - 13, XP002218849 *
BURNETT J H ET AL: "Intrinsic birefringence in calcium fluoride and barium fluoride", PHYSICAL REVIEW B (CONDENSED MATTER AND MATERIALS PHYSICS), 15 DEC. 2001, APS THROUGH AIP, USA, vol. 64, no. 24, pages 241102/1 - 4, XP002218846, ISSN: 0163-1829 *
BURNETT J H ET AL: "Intrinsic Birefringence in calcium fluoride", PREPRINT HANDED OUT AT 2ND INTERNATIONAL SYMPOSIUM ON 157NM LITHOGRAPHY IN DANA POINT, CALIFORNIA, 15 May 2001 (2001-05-15), XP002232195 *
Nicht-Vertrauliches Schreiben vom 07.05.01 "Re: Birefringence of calcium fluoride" von Chris Van Peski von International SEMATECH zu den Vertretern von Litho. PAG (Project Advisory Group) *
PASTRNAK J ET AL: "Optical anisotropy of silicon single crystals", PHYSICAL REVIEW B (SOLID STATE), 15 APRIL 1971, USA, vol. 3, no. 8, pages 2567 - 2571, XP001109107, ISSN: 0556-2805 *
PATENT ABSTRACTS OF JAPAN vol. 1997, no. 10 31 October 1997 (1997-10-31) *
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 14 5 March 2001 (2001-03-05) *
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 21 3 August 2001 (2001-08-03) *
SHIRAISHI N ET AL: "PROGRESS OF NIKON'S F2 EXPOSURE TOOL DEVELOPMENT", PROCEEDINGS OF THE SPIE, SPIE, BELLINGHAM, VA, US, vol. 4691, 5 March 2002 (2002-03-05) - 7 March 2002 (2002-03-07), pages 594 - 601, XP008010023 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8861084B2 (en) 2004-01-16 2014-10-14 Carl Zeiss Smt Ag Polarization-modulating optical element
US9316772B2 (en) 2004-01-16 2016-04-19 Carl Zeiss Smt Gmbh Producing polarization-modulating optical element for microlithography system
US9581911B2 (en) 2004-01-16 2017-02-28 Carl Zeiss Smt Gmbh Polarization-modulating optical element

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US20040190151A1 (en) 2004-09-30
US7382536B2 (en) 2008-06-03
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US7180667B2 (en) 2007-02-20
US20050122594A1 (en) 2005-06-09
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US7145720B2 (en) 2006-12-05
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US7126765B2 (en) 2006-10-24
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