Classifications

• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
  • H05B33/00—Electroluminescent light sources
  • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
  • H05B33/26—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
  • H05B33/00—Electroluminescent light sources
  • H05B33/02—Details
  • H05B33/04—Sealing arrangements, e.g. against humidity
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
  • H05B33/00—Electroluminescent light sources
  • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
  • H05B33/00—Electroluminescent light sources
  • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
  • H05B33/22—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
  • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
  • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
  • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
  • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K50/00—Organic light-emitting devices
  • H10K50/80—Constructional details
  • H10K50/84—Passivation; Containers; Encapsulations
  • H10K50/844—Encapsulations
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
  • H10K59/10—OLED displays
  • H10K59/12—Active-matrix OLED [AMOLED] displays
  • H10K59/122—Pixel-defining structures or layers, e.g. banks
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
  • H10K59/80—Constructional details
  • H10K59/87—Passivation; Containers; Encapsulations
  • H10K59/873—Encapsulations
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
  • H10K59/80—Constructional details
  • H10K59/875—Arrangements for extracting light from the devices
  • H10K59/878—Arrangements for extracting light from the devices comprising reflective means
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K50/00—Organic light-emitting devices
  • H10K50/80—Constructional details
  • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
  • H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers

Definitions

• the present invention provides an electroluminescence element (hereinafter, referred to as an EL element) or a light emitting diode element (hereinafter, referred to as an LED element) which emits light when a drive current flows through a light emitting thin film such as an organic semiconductor film.
• the present invention relates to an active matrix type display device in which a thin film light emitting element is driven and controlled by a thin film transistor (hereinafter, referred to as TFT).
• TFT thin film transistor
• An active matrix type display device using a current control type light emitting element such as an EL element or an LED element has been proposed. Since the light-emitting elements used in this type of display device emit light by themselves, they do not require a backlight unlike liquid crystal display devices, and also have advantages such as low viewing angle dependence.
• FIG. 4 is a block diagram of an active matrix display device using an EL element that emits light by such a charge injection type organic semiconductor thin film.
• a plurality of scanning line gates are provided on a transparent substrate 10 so as to extend in a direction intersecting the extending direction of the scanning line gates.
• a data-side driving circuit 3 and a scanning-side driving circuit 4 are configured for the data line sig and the scanning line gate.
• Each pixel 7 has a conduction control circuit 50 to which a scanning signal is supplied via a scanning line gate, and a light emission based on an image signal supplied from a data line sig via the conduction control circuit 50. And a thin-film light-emitting element 40.
• the continuity control circuit 50 includes: a first TFT 20 that receives a scan signal to a gate electrode via a scan line gate; A storage capacitor cap for holding an image signal supplied from the data line sig via the first TFT 20, and a second TFT 3 for supplying the image signal held by the storage capacitor cap to the gate electrode 0.
• the second TFT 30 and the thin-film light emitting element 40 are connected in series between a common electrode op and a common power supply line com to be described later.
• FIG. 5 is a plan view showing one of the pixels included in the active matrix type display device shown in FIG.
• FIGS. 6 (A), (B) and (C) are a sectional view taken along the line AA ′, a sectional view taken along the line BB ′ and a sectional view taken along the line CC ′ of FIG. 5, respectively.
• the active matrix display device 1A having such a configuration, as shown in FIGS.
• a first TFT 20 and a second TFT 30 are formed.
• the gate electrode 21 is configured as a part of the scanning line gate.
• the data line sig is electrically connected to one of the source / drain regions via the contact hole of the first interlayer insulating film 51, and the drain electrode 22 is electrically connected to the other. Connected.
• the drain electrode 22 extends toward the region where the second TFT 30 is to be formed, and the gate electrode 31 of the second TFT 30 is provided with the first interlayer insulating film in this extended portion. 51 Electrical connection via 1 contact hole.
• a relay electrode 35 is electrically connected to one side of the source 'drain region of the second TFT 30 via a contact hole of the first interlayer insulating film 51, and is connected to the relay electrode 35. Is electrically connected to the pixel electrode 41 of the thin-film light emitting element 40 via a contact hole of the second interlayer insulating film 52.
• the pixel electrode 41 is formed independently for each pixel 7 as can be seen from FIGS. 5 and 6 (B) and (C). On the upper layer side of the pixel electrode 41, an organic semiconductor film 43 and a counter electrode op are laminated in this order. The counter electrode op is formed so as to cover at least the display unit 11.
• the other of the source / drain regions of the second TFT 30 is shared through the connection hole of the first interlayer insulating film 51.
• the communication line com is electrically connected.
• the extended portion 39 of the common power supply line com faces the extended portion 36 of the gate electrode 31 of the second TFT 30 with the first interlayer insulating film 51 as a dielectric film. , Constitutes the storage capacity cap.
• the counter electrode op is laminated on the transparent substrate 10 itself, and therefore, unlike the active matrix type liquid crystal display device, the opposite substrate is used.
• the opposite substrate is used.
• the thin-film light-emitting element 40 is only covered with a thin counter electrode op, moisture and oxygen enter the organic semiconductor film 43 by diffusing and transmitting through the counter electrode op, and the luminous efficiency of the thin-film light-emitting element 40 is reduced.
• the drive voltage may increase (the threshold voltage shifts to a higher voltage side), and the reliability may decrease.
• the display portion 11 is covered with a counter substrate, and the outer periphery of the counter substrate is sealed. was taken.
• this method impairs the advantages of the above liquid crystal display device.
• an object of the present invention is to provide an active matrix type display device capable of protecting a thin film light emitting element from moisture and the like with a simple structure.
• the active matrix display device of the present invention has the following configuration.
• a plurality of scanning lines, a plurality of data lines intersecting the scanning lines, and a display unit including a plurality of pixels formed in a matrix by the data lines and the scanning lines are formed on a substrate.
• Each of the pixels includes a conduction control circuit including a thin film transistor for supplying a scanning signal to the gate electrode via the scanning line, a pixel electrode formed for each pixel, and an upper layer of the pixel electrode.
• the thin-film light-emitting element emits light based on an image signal supplied through a counter electrode
• at least a protection layer covering at least a region where the counter electrode is formed is provided on the upper layer side of the counter electrode.
• Film is formed It is characterized by having. According to this configuration, since the protective film is formed on the upper layer side of the counter electrode of the thin-film light-emitting element, the thin-film light-emitting element can be protected from moisture or the like that diffuses and permeates the counter electrode. Therefore, in the thin-film light-emitting device, there is no possibility that the luminous efficiency is reduced, the driving voltage is increased (the threshold voltage is shifted to a higher voltage side), and the reliability is not reduced.
• the manufacturing cost of an active matrix display device does not increase. Therefore, the reliability of the active matrix display device is improved while maintaining the advantage of the active matrix display device using the thin-film light emitting element that the necessity of covering the opposite substrate is unnecessary. be able to.
• the material used for the counter electrode may be selected in terms of the light-emitting efficiency of the thin-film light-emitting element, the driving voltage, and the like. There is also an advantage that it is not limited to a high one.
• the light-emitting thin film is partitioned by an insulating film formed below the counter electrode and thicker than the organic semiconductor film.
• the counter electrode is formed at least on the entire surface of the display section and faces the data line. Will be parasitic.
• a thick insulating film is interposed between the data line and the counter electrode, it is possible to prevent the parasitic capacitance of the data line. As a result, the load on the data-side driving circuit can be reduced, so that low power consumption or high-speed display operation can be achieved.
• the insulating film when such an insulating film is formed, when forming a light emitting thin film by an ink jet method in a region defined by the insulating film, the insulating film is used to prevent the discharge liquid from overflowing. Can be used as a layer.
• the counter electrode is made of, for example, an alkali metal-containing aluminum film.
• the counter electrode is formed of such a film, the effect of forming the protective film is remarkable because moisture and the like are likely to diffuse and permeate.
• the protective film may be formed of an insulating film such as a silicon nitride film, or may be formed of a conductive film such as a refractory metal or an alloy thereof. Also, The protective film may be formed of a conductive film such as a pure aluminum film, a silicon-containing aluminum film, and a copper-containing aluminum film. Further, the protective film may have a two-layer structure of a conductive film and an insulating film. In the case where the protective film laminated on the counter electrode is formed of a conductive film, the same effect as that of reducing the electric resistance of the counter electrode can be obtained.
• a large step formed by the insulating film may cause disconnection of a counter electrode formed on an upper layer side.
• the protective film laminated on the counter electrode is formed of a conductive film, the conductive film forms a redundant wiring structure, so that disconnection of the counter electrode can be prevented. Therefore, in an active matrix display device, even if a thick insulating film is formed around the organic semiconductor film to suppress parasitic capacitance and the like, disconnection does not occur in the counter electrode formed above the insulating film. Therefore, the display quality and reliability of the active matrix display device can be improved.
• the conduction control circuit includes: a first TFT to which the scanning signal is supplied to a gate electrode; and a second TFT to which the gate electrode is connected to the data line via the first TFT.
• the second TFT and the thin film light emitting element are connected in series between a common power supply line for supplying a drive current, which is formed separately from the data line and the scanning line, and the counter electrode.
• the power s constitute the holding capacitor and two TFT conduction control circuit of each pixel from the viewpoint of you increase the display quality to configure the conduction control circuit in the storage capacitor with one TFT Is preferred.
• FIG. 1 is a block diagram schematically showing the overall layout of an active matrix display device to which the present invention is applied.
• FIG. 2 is a plan view showing one of the pixels included in the active matrix display device shown in FIG.
• FIG. 3 are cross-sectional views taken along line A—A ′ in FIG. It is a B 'sectional view and a C-C' sectional view.
• FIG. 4 is a block diagram schematically showing the entire layout of a conventional active matrix display device.
• FIG. 5 is a plan view showing one of the pixels included in the active matrix display device shown in FIG.
• FIG. 6 are a cross-sectional view taken along line AA ′, a cross-sectional view taken along line B-B ′, and a cross-sectional view taken along line C-C ′ in FIG.
• FIG. 1 is a block diagram schematically showing the overall layout of the active matrix display device.
• FIG. 2 is a plan view showing one of the pixels included therein, and FIGS. 3 (A), (B), and (C) are cross-sectional views taken along line A-A 'of FIG. 2, and B-B', respectively.
• FIG. 4 is a cross-sectional view, and a C-C ′ cross-sectional view.
• a central portion of a transparent substrate 10 as a base is a display portion 11.
• a data-side driving circuit 3 for outputting an image signal is formed at an end of the data line sig in an outer peripheral portion of the transparent substrate 10, and a scanning-side driving circuit for outputting a scanning signal is provided at an end of the scanning line gate. 4 are configured.
• an N-type TFT and a P-type TFT constitute a complementary TFT.
• the complementary TFT includes a shift register circuit, a level shifter circuit, an analog switch circuit, and the like. Is composed.
• a plurality of scanning line gates and the extending direction of the scanning line gates are formed on the transparent substrate 10.
• a plurality of pixels 7 are arranged in a matrix by a plurality of data lines sig extending in a direction intersecting the pixel.
• Each pixel 7 emits light based on a conduction control circuit 50 to which a scanning signal is supplied via a scanning line gate, and an image signal supplied from a data line sig via the conduction control circuit 50.
• the thin film light emitting device 40 is constituted.
• the conduction control circuit 50 includes a first TFT 20 in which a scanning signal is supplied to a gate electrode through a scanning line gate, and a data through the first TFT 20.
• the storage capacitor cap holds an image signal supplied from the evening line sig, and the second TFT 30 supplies the image signal held by the storage capacitor cap to the gate electrode.
• the second TFT 30 and the thin-film light emitting element 40 are connected in series between a common electrode op and a common power supply line com described later in detail.
• each of the pixels 7 has an island-shaped semiconductor film (silicon film).
• the first TFT 20 and the second TFT 30 are formed by utilizing the above.
• the gate electrode 21 is configured as a part of the scanning line gate.
• a data line sig is electrically connected to one of the source / drain regions via a contact hole of the first interlayer insulating film 51, and a drain electrode 22 is connected to the other. Electrically connected.
• the drain electrode 22 extends toward the region where the second TFT 30 is to be formed, and the gate electrode 31 of the second TFT 30 is provided with the first interlayer insulating film in this extended portion. 5 Electrically connected via 1 contact hole.
• a relay electrode 35 formed simultaneously with the data line sig is electrically connected to one of the source and drain regions of the second TFT 30 through a contact hole of the first interlayer insulating film 51.
• a transparent pixel electrode 41 made of an ITO film of the thin-film light emitting element 40 is electrically connected to the relay electrode 35 via a contact hole of the second interlayer insulating film 52.
• the pixel electrode 41 is formed independently for each pixel 7.
• an organic semiconductor film 43 made of, for example, polyphenylenevinylene (PPV), and a counter electrode op made of a metal film made of aluminum or calcium containing an alkali metal such as lithium.
• the thin-film light emitting elements 40 are stacked in this order.
• the organic semiconductor film 43 is formed in a striped manner over a plurality of pixels 7 by the force formed in each pixel 7. It may be formed.
• the counter electrode op is formed in a region excluding the entire display unit 11 and at least the periphery of the portion where the terminal 12 is formed.
• the thin-film light-emitting device 40 has a structure in which a hole injection layer is provided to increase luminous efficiency (hole injection rate), a structure in which an electron injection layer is provided to increase luminous efficiency (electron injection rate), A structure in which both an injection layer and an electron injection layer are formed can be employed.
• a common power supply line com is provided on the other side of the source 'drain region of the second TFT 30 via the contact hole of the first interlayer insulating film 51. Electrically connected.
• the extended portion 39 of the common feed line com is opposed to the extended portion 36 of the gate electrode 31 of the second TFT 30 with the first interlayer insulating film 51 as a dielectric film. And constitute a storage capacity cap.
• the active matrix type display device 1 configured as described above, when the first TFT 20 is turned on by being selected by the scanning signal, the image signal from the data line sig is changed to the first TFT 20. Is applied to the gate electrode 31 of the second TFT 30 via the first TFT 20, and an image signal is written to the storage capacitor cap via the first TFT 20.
• a voltage is applied using the counter electrode op and the pixel electrode 41 as the negative electrode and the positive electrode, respectively, and the organic semiconductor film is applied in a region where the applied voltage exceeds the threshold voltage. 43
• the current (drive current) flowing in 3 increases rapidly.
• the light-emitting element 40 emits light as an electroluminescence element or an LED element, and the light of the light-emitting element 40 is reflected by the counter electrode op and passes through the transparent pixel electrode 41 and the transparent substrate 10 to be emitted. Is done.
• the driving current for performing such light emission flows through the current path composed of the counter electrode op, the organic semiconductor film 43, the pixel electrode 41, the second TFT 30, and the common power supply line com.
• the second TFT 30 is turned off, the current stops flowing.
• the gate electrode of the second TFT 30 is held at the potential corresponding to the image signal by the storage capacitor cap even when the first TFT 20 is turned off. 0 remains on. Therefore, the drive current continues to flow through the light emitting element 40, and this pixel remains lit. This state indicates that new image data Is written to the storage capacitor cap and is maintained until the second TFT 30 is turned off.
• the active matrix type display device 1 using the thin-film light emitting element 40 is different from the active matrix type liquid crystal display device because the opposing electrode op is laminated on the transparent substrate 10 itself.
• the opposing electrode op is laminated on the transparent substrate 10 itself.
• moisture or oxygen may enter the thin-film light-emitting element 40 by diffusing and transmitting through the thin counter electrode op.
• an aluminum film containing an alkali metal such as lithium is used as the opposing electrode op for the purpose of increasing the electron injection efficiency of the thin-film light emitting element 40 and lowering its driving voltage.
• this alkali metal-containing aluminum film is more likely to diffuse and permeate water and oxygen than pure aluminum.
• the aluminum film containing an alkali metal has poorer toughness than a pure aluminum film, a silicon-containing aluminum film, and a copper-containing aluminum film, and easily breaks when subjected to stress. Moisture and oxygen may enter.
• the fracture surface of the aluminum film containing aluminum metal shows a columnar structure, and it is considered that water and oxygen easily diffuse and permeate between the structures.
• a protective film 60 made of pure aluminum is formed above the counter electrode op.
• the protective film 60 made of pure aluminum has a toughness that does not break under a certain amount of stress, so that cracks that serve as moisture and oxygen intrusion paths do not occur.
• pure aluminum does not show a columnar structure such as an alkali metal-containing aluminum film in the fractured surface, and there is no possibility that moisture or oxygen may permeate or enter between the structures.
• the active matrix type display device 1 of the present embodiment can protect the thin-film light-emitting device 40 from moisture and the like, so that the thin-film light-emitting device 40 causes a decrease in luminous efficiency and an increase in driving voltage ( There is no shift of the threshold voltage to the higher voltage side, and no reduction in reliability.
• the protective film 60 is made of such a pure aluminum film, it can be easily formed using a semiconductor process. There is no increase in the manufacturing cost of the Tib Matrix display device 1. Therefore, the active matrix type display device using the thin film light emitting element 40, while maintaining the advantage that there is no need to cover the opposing substrate, which is the advantage of the active matrix type display device 40, is maintained. 1 can improve the reliability.
• the material used for the opposing electrode op may be selected from the viewpoint of the light-emitting efficiency and driving voltage of the thin-film light-emitting element 40. Also, there is an advantage that the performance of protecting the thin-film light-emitting element 40 is not limited to a high one.
• the protective film 60 laminated on the opposing electrode op is formed of a conductive film made of a pure aluminum film, the same effect as reducing the electric resistance of the opposing electrode op can be obtained. Can be.
• FIGS. 1, 2, and 3 in order to prevent a large capacitance from being parasitic on the data line sig, FIGS. 1, 2, and 3 (A), As shown in (B) and (C), a thick insulating film consisting of a resist film or a polyimide film (bank layer bank / a diagonal line at the lower left is formed at a wide pitch along the data line sig and the scanning line gate). The opposing electrode op is formed on the upper side of the bank layer bank. For this reason, since the second interlayer insulating film 52 and the thick bank layer bank are interposed between the data line sig and the counter electrode op, the parasitic capacitance on the data line sig is extremely small. Therefore, the loads on the driving circuits 3 and 4 can be reduced, and low power consumption or high-speed display operation can be achieved.
• a bank layer bank (the formation region is hatched) is also formed in a peripheral region of the transparent substrate 10 (a region outside the display unit 11). Therefore, the data side drive circuit 3 and the scan side drive circuit 4 are both covered by the bank layer bank.
• the opposing electrode op is formed at least in the display section 11 and does not need to be formed in the formation region of the drive circuit. However, the opposing electrode op is usually Since the electrodes are formed by the spacers, the alignment accuracy is poor, and the opposing electrode op may overlap the driving circuit. Even when the opposing electrode op overlaps the formation region of the driving circuit, the bank layer bank is interposed between the wiring layer of the driving circuit and the opposing electrode op. 4 prevents parasitic capacitance. For this reason, the load on the drive circuits 3 and 4 can be reduced, and low power consumption or high-speed display operation can be achieved.
• the bank layer b an k is also formed in the region where the pixel electrode 41 is formed and the region overlapping the relay electrode 35 of the conduction control circuit 50. Therefore, the organic semiconductor film 43 is not formed in a region overlapping with the relay electrode 35. That is, since the organic semiconductor film 43 is formed only in a flat portion in the region where the pixel electrode 41 is formed, the organic semiconductor film 43 is formed to have a constant film thickness and does not cause display unevenness. Further, if there is no bank layer b an k in a region overlapping with the relay electrode 35, a driving current flows between this portion and the counter electrode op, and the organic semiconductor film 43 emits light.
• this light is sandwiched between the relay electrode 35 and the counter electrode op and is not emitted outside and does not contribute to display.
• the drive current flowing in such a portion that does not contribute to display can be said to be a reactive current from the viewpoint of display.
• a bank layer bank is formed in a portion where the reactive current should flow in the past, and the drive current is prevented from flowing there. Can be prevented. Therefore, the width of the common feed line cm may be narrower accordingly. As a result, the light emitting area can be increased, and the display performance such as luminance and contrast ratio can be improved.
• a large step bb formed by this bank layer bank may cause disconnection of the opposing electrode op formed on the upper layer side.
• the protective film 60 laminated on the counter electrode op is formed of a conductive film, the conductive film (protective film 60) forms a redundant wiring structure. Therefore, even if the parasitic capacitance is suppressed by forming a thick bank layer bank, Since the disconnection does not occur in the opposing electrode op formed in the upper layer, the display quality and reliability of the active matrix display device 1 can be improved.
• the bank layer bank When the bank layer bank is formed of a black resist, the bank layer bank functions as a black matrix, and the display quality such as a contrast ratio is improved. That is, in the active matrix display device 1 according to the present embodiment, since the opposing electrode op is formed on the entire surface of the pixel 7 on the front surface side of the transparent substrate 10, the reflected light from the opposing electrode op is contrasted. Lower the ratio. However, if the bank layer bank, which has the function of preventing the parasitic capacitance, is composed of a black resist, the bank layer bank also functions as a black matrix and blocks the reflected light from the opposing electrode op. The ratio improves.
• the bank layer bank formed in this way is configured to surround the formation region of the organic semiconductor film 43, in the manufacturing process of the active matrix display device, the bank layer is discharged from the ink head.
• the organic semiconductor film 43 is formed from the liquid material (discharged liquid) thus obtained, the liquid is dammed to prevent the discharged liquid from protruding to the side.
• the steps up to manufacturing the first TFT 20 and the second TFT 30 on the transparent substrate 10 are as follows. Since the process for manufacturing the active matrix substrate of the liquid crystal active matrix display device 1 is substantially the same as that of the liquid crystal matrix display device 1, the outline thereof will be described with reference to FIGS. 3 (A), (B) and (C). Will be described briefly.
• a thickness of about 200 to 500 ⁇ m is applied to the transparent substrate 10 by plasma CVD using TEOS (tetraethoxysilane) or oxygen gas as a source gas.
• TEOS tetraethoxysilane
• oxygen gas as a source gas.
• an underlying protective film (not shown) consisting of a silicon oxide film with a thickness of 0 ⁇
• the surface of the underlying protective film is formed to a thickness of about 300 to 700 ⁇ by a plasma CVD method.
• a semiconductor film made of a silicon film is formed.
• a crystallization process such as laser annealing or a solid phase growth method is performed on the semiconductor film made of the amorphous silicon film, and the semiconductor film is formed into a policy. Crystallizes into a recon film.
• the semiconductor film is patterned to form an island-shaped semiconductor film, and the thickness of the surface is reduced by plasma CVD using TEOS (tetraethoxysilane), oxygen gas, or the like as a source gas.
• TEOS tetraethoxysilane
• oxygen gas or the like as a source gas.
• a gate insulating film 57 made of a silicon oxide film or a nitride film of about 600 to 150 ⁇ is formed.
• a conductive film made of a metal film such as aluminum, tantalum, molybdenum, titanium, or tungsten is formed by a sputtering method, and then patterned to form an extended portion 3 of the gate electrodes 21 and 31 and the gate electrode 31. 6 is formed (gate electrode forming step). In this step, the scanning line g a t e is also formed.
• each contact hole is formed.
• the data line sig, the drain electrode 22, the common feed line com, and the common feed line com are extended.
• the part 39 and the relay electrode 35 are formed.
• the first TFT 20, the second TFT 30, and the storage capacitor cap are formed.
• a second interlayer insulating film 52 is formed, and a contact hole is formed in a portion corresponding to the relay electrode 35 in the interlayer insulating film.
• patterning is performed, and pixels electrically connected to the source / drain region of the second TFT 30 via the contact holes are formed.
• An electrode 41 is formed for each pixel 7.
• the resist is patterned so as to remain along the scanning line gate and the data line sig. Form a bank.
• the resist portion left along the data line sig is wide so as to cover the common feed line com.
• a region where the organic semiconductor film 43 of the light emitting element 40 is to be formed is surrounded by the bank layer bank.
• the injection is performed in the area partitioned in matrix by the bank layer bank.
• Each organic semiconductor film 43 corresponding to R, G, and B is formed using the method.
• a liquid material (precursor) for forming the organic semiconductor film 43 is discharged from the ink jet head into the region inside the bank layer bank, and the liquid material is discharged from the inside of the bank layer bank.
• the organic semiconductor film 43 is formed by fixing in the region.
• the bank layer bank is composed of a resist, it is water repellent.
• the precursor of the organic semiconductor film 43 uses a hydrophilic solvent, the application region of the organic semiconductor film 43 is definitely defined by the bank layer bank, and the adjacent pixels 7 It does not protrude. Therefore, the organic semiconductor film 43 and the like can be formed only in the predetermined region.
• the precursor discharged from the ink jet swells to a thickness of about 2 / m to about 4 m due to the effect of surface tension, so that the bank layer bank has a thickness of about 1 m to about 3 m. Thickness is required.
• the thickness of the organic semiconductor film 43 after fixing is from about 0.05 to 111 to about 0.2 ⁇ m.
• the partition composed of the bank layer bank is lm or more in advance, the bank layer bank functions sufficiently as a partition even if the bank layer bank is not water-repellent. If such a thick bank layer bank is formed, the formation region can be defined even when the organic semiconductor film 43 is formed by a coating method instead of the ink jet method.
• an opposing electrode op is formed on substantially the entire surface of the transparent substrate 10, and a protective film 60 is laminated on the opposing electrode 0 p. If the protective film 60 has a thickness of about 2000 angstroms to 1 ⁇ m, sufficient moisture resistance can be ensured.
• each organic semiconductor film 43 corresponding to R, G, and B can be formed in a predetermined region by using an ink jet method, so that a full-color active matrix is formed. Can be manufactured with high productivity.
• TFTs are also formed in the data-side drive circuit 3 and the scan-side drive circuit 4 shown in FIG. 1, but these TFTs use all or a part of the process of forming a TFT in the pixel 7 described above. Done. Therefore, the TFT constituting the drive circuit is also formed between the same layers as the TFT of the pixel 7.
• the first TFT 20 and the second TFT 30 both are N-type, both are P-type, and one is The N-type and the other may be P-type, but any combination of these can form a TFT by a well-known method, and a description thereof will be omitted.
• the protective film 60 is formed by a method similar to that of the above-described embodiment.
• a silicon-containing aluminum film may be used as long as it is a conductive film that transmits less moisture and oxygen.
• a metal film such as a film or a copper-containing aluminum film, or another metal can be used.
• the protective film 60 a high melting point metal, an alloy thereof, or the like can be used.
• the protective film 60 may have a two-layer structure of an insulating film and a conductive film. In this case, a conductive film is stacked on the counter electrode op to realize the redundant wiring structure. it can. In any case, if the thickness of the protective film is about 2000 to 1 ⁇ , sufficient moisture resistance can be ensured.
• the bank layer bank (insulating film) is made of an organic material such as a resist film or a polyimide film, a force s capable of easily forming a thick film, and the bank layer bank (insulating film) is formed by a CVD method.
• the bank layer bank (insulating film) is made of an organic material such as a resist film or a polyimide film, a force s capable of easily forming a thick film, and the bank layer bank (insulating film) is formed by a CVD method.
• the storage capacitor cap may be formed between the scanning line gate and the capacitor line formed in parallel, in addition to the structure formed between the common power supply line com and the storage capacitor cap. A structure using the drain region and the gate electrode 31 of the second TFT 30 may be used.
• the protective film is formed on the upper layer side of the counter electrode of the thin film light emitting device, the thin film light emitting device is protected from moisture and the like. be able to. Therefore, there is no possibility that the thin-film light emitting device is deteriorated.
• a protective film can be easily formed using a semiconductor process, the manufacturing cost of an active matrix display device can be increased. Absent. Therefore, it is necessary to improve the reliability of the active matrix display device while maintaining the advantage of the active matrix display device using the thin-film light emitting element that there is no need to cover the opposite substrate. Can be.
• the material used for the counter electrode may be selected from the viewpoint of the light-emitting efficiency of the thin-film light-emitting element and the driving voltage. There is also an advantage that it is not limited to a high one. Industrial applicability
• the present invention is suitable for use as an active matrix type display device in which a thin film light emitting element such as an electroluminescent element or a light emitting diode element is driven and controlled by a thin film transistor. Further, the active matrix type display device to which the present invention is applied can be widely used not only for personal computers and portable information terminals, but also for information display devices such as large billboards and billboards outdoors.

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• Physics & Mathematics (AREA)
• Optics & Photonics (AREA)
• Electroluminescent Light Sources (AREA)
• Devices For Indicating Variable Information By Combining Individual Elements (AREA)

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• 1997
  • 1997-08-29 JP JP23492197A patent/JP3830238B2/ja not_active Expired - Lifetime
• 1998
  • 1998-08-25 CN CNB988015846A patent/CN1138457C/zh not_active Expired - Lifetime
  • 1998-08-25 CN CNB031406548A patent/CN1278292C/zh not_active Expired - Lifetime
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• 2002
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