US20090272466A1 - Ultrahigh-Purity Copper and Process for Producing the Same, and Bonding Wire Comprising Ultrahigh-Purity Copper - Google Patents

Ultrahigh-Purity Copper and Process for Producing the Same, and Bonding Wire Comprising Ultrahigh-Purity Copper Download PDF

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Publication number
US20090272466A1
US20090272466A1 US11/915,628 US91562806A US2009272466A1 US 20090272466 A1 US20090272466 A1 US 20090272466A1 US 91562806 A US91562806 A US 91562806A US 2009272466 A1 US2009272466 A1 US 2009272466A1
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Prior art keywords
copper
electrolytic solution
purity
less
ultrahigh
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Yuichiro Shindo
Kouichi Takemoto
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JX Nippon Mining and Metals Corp
Nippon Mining Holdings Inc
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Nippon Mining and Metals Co Ltd
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Assigned to NIPPON MINING & METALS CO., LTD. reassignment NIPPON MINING & METALS CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SHINDO, YUICHIRO, TAKEMOTO, KOUICHI
Publication of US20090272466A1 publication Critical patent/US20090272466A1/en
Assigned to NIPPON MINING HOLDINGS, INC. reassignment NIPPON MINING HOLDINGS, INC. MERGER (SEE DOCUMENT FOR DETAILS). Assignors: NIPPON MINING & METALS CO., LTD.
Assigned to JX NIPPON MINING & METALS CORPORATION reassignment JX NIPPON MINING & METALS CORPORATION CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: NIPPON MINING HOLDINGS, INC.
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    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B15/00—Obtaining copper
    • C22B15/0063—Hydrometallurgy
    • C22B15/0084—Treating solutions
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
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    • C22B15/00—Obtaining copper
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    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25C—PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY OR REFINING OF METALS; APPARATUS THEREFOR
    • C25C1/00—Electrolytic production, recovery or refining of metals by electrolysis of solutions
    • C25C1/12—Electrolytic production, recovery or refining of metals by electrolysis of solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25C—PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY OR REFINING OF METALS; APPARATUS THEREFOR
    • C25C7/00—Constructional parts, or assemblies thereof, of cells; Servicing or operating of cells
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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Definitions

  • the present invention relates to ultrahigh purity copper having a purity of 8N (99.999999 wt %) or higher that can be subject to thinning without breaking, and the manufacturing method of such ultrahigh purity copper.
  • the present invention also relates to a bonding wire comprised of such ultrahigh purity copper.
  • Non-Patent Documents 1 and 2 propose proposals for switching to a copper wire.
  • High purity copper is characterized in that it is soft since the recrystallization temperature is low, it has favorable workability since there is hardly any brittleness in the intermediate temperature range, and it has high thermal conductivity since the electrical resistance is small at ultracold temperatures. It is also characterized by characteristic improvement due to addition of infinitesimal quantity of elements and great impact of impurity contamination on the characteristics.
  • a copper wire also entails several drawbacks; for instance, a copper wire is easily oxidized when forming the tip thereof into a ball shape, and there is a problem in that the silicon chip will be damaged when the ball shape is inferior or because the ball is too hard.
  • Proposals have been made to overcome the foregoing problems that arise during the shaping of the ball and with regard to the hardness of copper; namely, employing a protective atmosphere (reduction or inert atmosphere), and realizing copper having a purity level of 4N to 6N by eliminating impurities so as to soften such copper.
  • a protective atmosphere reduction or inert atmosphere
  • Patent Document 1 a copper bonding wire wherein the impurities are 10 ppm or less
  • Patent Document 2 a copper bonding wire wherein the impurities containing B are 50 ppm or less
  • Patent Document 3 a bonding wire for use in a semiconductor element wherein the copper purity is 99.999% or higher and the S content is 0.0005% or less
  • Patent Document 4 a copper bonding wire comprised of high purity copper subject to annealing during the wire drawing process
  • Patent Document 4 a bonding wire for use in a semiconductor device wherein the total content of impurities is 5 ppm or less, and the rupture strength is 18 to 28 kg/mm 2
  • Patent Document 6 a copper bonding wire with adjusted crystal grains wherein the impurities are 10 ppm or less
  • the conventional technologies had problems in not being able to obtain a copper bonding wire that supersedes the performance of Au.
  • Non-Patent Document 1 “Practical Application Technology of Copper Wire Bonding” (No. 42, 1989) pages 77 to 80
  • Non-Patent Document 2 “Development of Copper Bonding Wire” Electronics Special Feature (No.10, 1991-1) pages 53 to 56
  • Patent Document 1 Japanese Patent Laid-Open Publication No. S61-251062
  • Patent Document 2 Japanese Patent Laid-Open Publication No. S61-255045
  • Patent Document 3 Japanese Patent Laid-Open Publication No. S62-104061
  • Patent Document 4 Japanese Patent Laid-Open Publication No. S62-20858
  • Patent Document 5 Japanese Patent Laid-Open Publication No.
  • Patent Document 6 Japanese Patent Laid-Open Publication No. S62-89348 [Patent Document 7] Japanese Patent Laid-Open Publication No. S62-127436 [Patent Document 8] Japanese Patent Laid-Open Publication No. S62-216238 [Patent Document 9] Japanese Patent Laid-Open Publication No. S62-127438 [Patent Document 10] Japanese Patent Laid-Open Publication No. S63-3424 [Patent Document 11] Japanese Patent Laid-Open Publication No. S63-56924 [Patent Document 12] Japanese Patent Laid-Open Publication No. S63-72858 [Patent Document 13] Japanese Patent Laid-Open Publication No.
  • Patent Document 14 Japanese Patent Laid-Open Publication No. S63-236338 [Patent Document 15] Japanese Patent Laid-Open Publication No. H3-291340 [Patent Document 16] Japanese Patent Laid-Open Publication No. H4-247630
  • Patent Document 17 Japanese Patent Laid-Open Publication No. 2003-174057
  • An object of the present invention is to obtain a copper material that is compatible with the thinning (wire drawing) of the above.
  • the present invention attempted to achieve higher purification of the high purity copper having a purity level of 5N to 6N.
  • the present invention aims to develop technology for efficiently manufacturing ultrahigh purity copper having a purity of 8N (99.999999 wt %) or higher, and provide extremely soft ultrahigh purity copper obtained thereby which in particular enables thinning.
  • the present invention also aims to provide a bonding wire for use in a semiconductor element capable of preventing the generation of cracks in the silicon during bonding, inhibiting the heat generation caused by the low resistivity of wires, and preventing oxidization during heat treatment.
  • the present invention based on the premise of realizing high purification through electrolytic refining, provides ultrahigh purity copper having a hardness of 40 Hv or less, and a purity of 8N or higher (provided that this excludes the gas components of O, C, N, H, S and P). If the hardness is 40 Hv or less, it is possible to prevent the generation of cracks in the silicon during bonding and enable thinning.
  • the ultrahigh purity copper of this invention is able to achieve this object.
  • the respective elements of O, S and P as gas components are 1 wtppm or less.
  • These gas components impurities
  • rupture will occur during the thinning process with such heterophase deposits as the origin.
  • since the Cu will harden, cracks will easily occur in the silicon during bonding. Accordingly, it is necessary to reduce the foregoing gas components as much as possible.
  • ultrahigh purity copper of the present invention it is possible to achieve a recrystallization temperature of 200° C. or less.
  • annealing can be performed at low temperatures during the manufacture process such as the wire drawing process, and it is thereby possible to lower the hardness even further.
  • electrolytic solution comprised of copper nitrate solution added with hydrochloric acid is used, and electrolysis is performed with two-step electrolysis.
  • the electrolytic solution is circulated.
  • the liquid temperature of the circulated solution is temporarily set to be 10° C. or less, and impurities such as AgCl are deposited and eliminated with a filter so as to obtain a further purified electrolytic solution.
  • the electrolysis temperature is set to be 10 to 70° C.
  • the electrolysis temperature is less than 10° C., impurities such as oxygen will increase and the electrodeposited Cu will become brittle. If the electrolysis temperature exceeds 70° C., the evaporation of the electrolytic solution will become a significant loss. Accordingly, it is desirable to set the electrolysis temperature to 10 to 70° C.
  • the present invention yields a significant effect of being able to efficiently manufacture ultrahigh purity copper having a purity level of 8N (99.999999 wt %) or higher. It is thereby possible to reduce the hardness and obtain a copper material that is compatible with thinning (wire drawing).
  • the present invention yields a superior effect of being able to prevent the generation of cracks in the silicon during bonding, inhibit the heat generation caused by the low resistance of the wires, and prevent the oxidization during heat treatment.
  • a bulk copper raw material having a purity level of 4N was used as the anode, a copper plate was used as the cathode, and an electrolytic solution comprised of copper nitrate solution was used to perform electrolysis based on two-step electrolysis. Since only a purity level of 5 to 7N can be obtained in the first step, electrolysis must be performed with two or more steps.
  • the copper raw material (4N) primarily contains large amounts of O, P and S.
  • the bath temperature was set to 15° C. or less, a nitric acid series electrolytic solution was used, and hydrochloric acid was added to the electrolytic solution in an amount of 0.1 to 100 ml/L. This is in order to eliminate Ag as AgCl.
  • electrolysis was performed at pH of 0 to 4, and current density of 0.1 to 10 A/dm 2 .
  • the electrolytic solution was circulated, the electrolytic solution of the circuit was cooled with a cooler to a temperature of 10° C. or less to deposit AgCl, and a filter was used to eliminate such AgCl and the like. It is thereby possible to obtain high purity copper having a purity level of 5N to 6N.
  • this copper having a purity level of 5N to 6N was used to perform electrolysis once again under the same electrolytic conditions as those described above.
  • the electrolytic solution was similarly circulated, the electrolytic solution of the circuit was cooled with a cooler to a temperature of 10° C. or less to deposit AgCl, and a filter was used to eliminate such AgCl and the like.
  • the electrodeposited copper obtained by the foregoing electrolysis may also be subject to vacuum melting such as by electron beam melting.
  • vacuum melting it is possible to effectively eliminate alkali metals such as Na and K and other volatile impurities, as well as gas components such as Cl.
  • degasification with reducible gas it is possible to eliminate and reduce the gas components.
  • the ultrahigh purity copper having a purity level of 8N or higher manufactured as described above satisfies the condition of having a hardness of 40 Hv or less, and it is also possible to achieve a recrystallization temperature of 200° C. or less.
  • a bulk copper raw material having a purity level of 4N was used as the anode, and a copper plate was used as the cathode to perform electrolysis.
  • the content of raw material impurities is shown in Table 1.
  • the copper raw material (4N) primarily contained large amounts of O, P and S.
  • Table 1 also shows the hardness and recrystallization temperature at this impurity level.
  • the hardness at a purity level of 4N was 45 Hv, and the recrystallization temperature was 450° C.
  • the diameter of the wire rod capable of being subject to thinning was 200 ⁇ m. The wires at this level were hard and generated cracks in the silicon during bonding (adhesion).
  • a nitric acid series electrolytic solution having a bath temperature of 30° C. was used, and 1 ml/L of hydrochloric acid was additionally added thereto. Electrolysis was performed at a pH of 1.3, and a current density of 1 A/dm 2 .
  • the electrolytic solution was circulated, the electrolytic solution of the circuit was temporarily cooled with a cooler to a temperature of 2° C., and a filter was used to eliminate the deposited AgCl and the like.
  • Table 1 shows the hardness and recrystallization temperature of copper having a purity level of 6N.
  • Hardness of the 6N copper was 42 Hv, and the recrystallization temperature was reduced to 230° C.
  • the diameter of the wire rod capable of being subject to thinning was 40 ⁇ m. Some cracks were generated in the silicon during bonding (adhesion), but this was not as significant as the 4N Cu.
  • this copper having a purity level of 6N was used to perform electrolysis once again under the same electrolytic conditions as those described above.
  • the electrolytic solution was similarly circulated, the electrolytic solution of the circuit was temporarily cooled with a cooler to a temperature of 0° C., and a filter was used to eliminate the deposited AgCl and the like.
  • Table 1 it was possible to obtain ultrahigh purity copper having a purity level of 9N.
  • Table 1 shows the hardness and recrystallization temperature of copper having a purity level of 9N.
  • the hardness was 38 Hv, and the recrystallization temperature decreased to 150° C.
  • the diameter of the wire rod capable of being subject to thinning was 2 ⁇ m, and improved significantly. No cracks were generated in the silicon during bonding (adhesion).
  • Example 1 achieved all conditions of the present invention; namely, the hardness being 40 Hv or less and the recrystallization temperature being 200° C. or less.
  • a bulk copper raw material having a purity level of 4N level was used as the anode, and a copper plate was used as the cathode to perform electrolysis.
  • the content of raw material impurities is shown in Table 2.
  • the copper raw material (4N) primarily contained large amounts of O, P and S.
  • Table 2 also shows the hardness and recrystallization temperature at this impurity level.
  • the hardness at a purity level of 4N was 47 Hv, and the recrystallization temperature was 450° C.
  • the diameter of the wire rod capable of being subject to thinning was 200 ⁇ m.
  • a nitric acid series electrolytic solution having a bath temperature of 25° C. was used, and 1 ml/L of hydrochloric acid was additionally added thereto. Electrolysis was performed at a pH of 2.0, and a current density of 1.5 A/dm 2 .
  • the electrolytic solution was circulated, and, as with Example 1, the electrolytic solution of the circuit was temporarily cooled with a cooler to a temperature of 5° C., and a filter was used to eliminate the deposited AgCl and the like.
  • Table 2 shows the hardness and recrystallization temperature of copper having a purity level of 5N5.
  • Hardness of the 5N5 copper was 43 Hv, and the recrystallization temperature was reduced to 280° C.
  • the diameter of the wire rod capable of being subject to thinning was 50 ⁇ m.
  • this copper having a purity level of 5N5 was used to perform electrolysis once again under the same electrolytic conditions as those described above.
  • the electrolysis was performed by setting the electrolytic solution to a temperature of 20° C.
  • the electrolytic solution was similarly circulated, the electrolytic solution of the circuit was temporarily cooled with a cooler to a temperature of 3° C., and a filter was used to eliminate the deposited AgCl and the like.
  • Table 2 it was possible to obtain ultrahigh purity copper having a purity level of 8N.
  • Table 2 shows the hardness and recrystallization temperature of copper having a purity level of 8N.
  • the hardness was 40 Hv, and the recrystallization temperature decreased to 180° C.
  • the diameter of the wire rod capable of being subject to thinning was 5 ⁇ m, and improved significantly.
  • Example 2 achieved all conditions of the present invention; namely, the hardness being 40 Hv or less and the recrystallization temperature being 200° C. or less.
  • a bulk copper raw material having a purity level of 4N was used as the anode, and a copper plate was used as the cathode to perform electrolysis.
  • the content of raw material impurities is shown in Table 3.
  • the copper raw material (4N) primarily contained large amounts of O, P and S.
  • Table 3 also shows the hardness and recrystallization temperature at this impurity level.
  • the hardness at a purity level of 4N was 45 Hv, and the recrystallization temperature was 450° C.
  • the diameter of the wire rod capable of being subject to thinning was 200 ⁇ m.
  • a nitric acid series electrolytic solution having a bath temperature of 20° C. was used, and 1 ml/L of hydrochloric acid was additionally added thereto. Electrolysis was performed at a pH of 1.3, and a current density of 1 A/dm 2 . The electrolytic solution was circulated but not cooled, and used as the electrolytic solution as is. Thereby, as shown in Table 3, it was possible to obtain high purity copper having a purity level of 4N5.
  • Table 3 shows the hardness and recrystallization temperature of copper having a purity level of 4N5. Hardness of the 4N5 copper was 44 Hv.
  • the recrystallization temperature was 430° C., and did not decrease significantly.
  • the diameter of the wire rod capable of being subject to thinning was 150 ⁇ m, but not very effective.
  • this copper having a purity level of 4N5 was used to perform electrolysis once again under the same electrolytic conditions as those described above. Thereby, as shown in Table 3, it was possible to obtain high purity copper having a purity level of 5N.
  • Table 3 shows the hardness and recrystallization temperature of copper having a purity level of 5N.
  • the hardness was high at 43 Hv, and the recrystallization temperature decreased to 420° C.
  • the diameter of the wire rod capable of being subject to thinning was 120 ⁇ m, and insufficient.
  • Comparative Example 1 did not satisfy all conditions of the present invention; namely, the hardness being 40 Hv or less and the recrystallization temperature being 200° C. or less, and did not achieve sufficient softness for realizing the thinning of a bonding wire. In addition, numerous cracks were generated in the silicon under the Al pad during heat bonding.
  • a bulk copper raw material having a purity level of 4N level was used as the anode, and a copper plate was used as the cathode to perform electrolysis.
  • the content of raw material impurities is shown in Table 4.
  • the copper raw material (4N) primarily contained large amounts of O, P and S.
  • Table 4 also shows the hardness and recrystallization temperature at this impurity level.
  • the hardness at a purity level of 4N was 45 Hv, and the recrystallization temperature was 450° C.
  • the diameter of the wire rod capable of being subject to thinning was 200 ⁇ m.
  • a nitric acid series electrolytic solution having a bath temperature of 35° C. was used, and 1 ml/L of hydrochloric acid was additionally added thereto. Electrolysis was performed at a pH of 1.3, and a current density of 1 A/dm 2 . The electrolytic solution was only circulated. Thereby, as shown in Table 4, it was possible to obtain high purity copper having a purity level of 4N5.
  • Table 4 shows the hardness and recrystallization temperature of copper having a purity level of 4N5. Hardness of the 4N5 copper was 44 Hv. The recrystallization temperature decreased to 430° C.
  • the diameter of the wire rod capable of being subject to thinning was 150 ⁇ m.
  • this copper having a purity level of 4N5 was used to perform electrolysis once again under the same electrolytic conditions as those described above.
  • the electrolytic solution of the circuit was temporarily cooled with a cooler to a temperature of 15° C., and a filter was used to eliminate the deposited AgCl and the like. Thereby, as shown in Table 4, it was possible to obtain high purity copper having a purity level of 6N.
  • Table 4 shows the hardness and recrystallization temperature of copper having a purity level of 6N.
  • the hardness was high at 42 Hv, and the recrystallization temperature decreased to 230° C.
  • the diameter of the wire rod capable of being subject to thinning was 40 ⁇ m, and insufficient.
  • Comparative Example 2 did not satisfy the conditions of the present invention; namely, the hardness being 40 Hv or less and the recrystallization temperature being 200° 0 C. or less, and did not achieve sufficient softness for realizing the thinning of a bonding wire. In addition, numerous cracks were generated in the silicon under the Al pad during heat bonding.
  • the present invention yields a significant effect of being able to efficiently manufacture ultrahigh purity copper having a purity of 8N (99.999999 wt %) or higher. It is thereby possible to obtain a copper material with reduced hardness and compatible with thinning (wire drawing). In particular, thinning of a bonding wire for a semiconductor element is enabled. In addition, the present invention yields a superior effect of being able to prevent the generation of cracks in the silicon during bonding, inhibit the heat generation caused by the low resistance of the wires, and prevent the oxidization during heat treatment.
  • the present invention is suitable for a copper bonding wire for a semiconductor element that requires thinning.
US11/915,628 2005-06-15 2006-04-24 Ultrahigh-Purity Copper and Process for Producing the Same, and Bonding Wire Comprising Ultrahigh-Purity Copper Abandoned US20090272466A1 (en)

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EP1903119B1 (en) 2015-09-23
CN101198711A (zh) 2008-06-11
CN100567532C (zh) 2009-12-09
JP4750112B2 (ja) 2011-08-17
JPWO2006134724A1 (ja) 2009-01-08
TW200643192A (en) 2006-12-16
WO2006134724A1 (ja) 2006-12-21
KR20100087780A (ko) 2010-08-05
EP1903119A4 (en) 2014-06-18
EP1903119A1 (en) 2008-03-26
KR20080017369A (ko) 2008-02-26

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