WO2021065551A1 - Al配線材 - Google Patents
Al配線材 Download PDFInfo
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- WO2021065551A1 WO2021065551A1 PCT/JP2020/035337 JP2020035337W WO2021065551A1 WO 2021065551 A1 WO2021065551 A1 WO 2021065551A1 JP 2020035337 W JP2020035337 W JP 2020035337W WO 2021065551 A1 WO2021065551 A1 WO 2021065551A1
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- C—CHEMISTRY; METALLURGY
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- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D8/00—Modifying the physical properties by deformation combined with, or followed by, heat treatment
- C21D8/06—Modifying the physical properties by deformation combined with, or followed by, heat treatment during manufacturing of rods or wires
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- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/04—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon
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Definitions
- the present invention relates to an Al wiring material. Furthermore, the present invention relates to a semiconductor device containing the Al wiring material.
- an electrode formed on a semiconductor chip and an electrode on a lead frame or a substrate are connected by a bonding wire or a bonding ribbon (collectively referred to as "wiring material”).
- Wiring materials mainly made of aluminum (Al) (hereinafter, also simply referred to as "Al wiring materials”) are used in power semiconductor devices.
- Al wiring materials mainly made of aluminum (Al)
- 300 ⁇ m ⁇ is used in a power semiconductor module.
- An example of using the Al bonding wire of the above is shown.
- wedge bonding is used for both the first connection with the electrode on the semiconductor chip and the second connection with the electrode on the lead frame or the substrate. ing.
- Power semiconductor devices using Al wiring materials are often used as high-power devices such as air conditioners and photovoltaic power generation systems, and semiconductor devices for vehicles.
- the joint portion of the wiring material may be exposed to a high temperature of 150 ° C. or higher when the device is operated.
- a material made of only high-purity Al is used as the wiring material, it is difficult to use it in a high temperature environment because the wiring material tends to soften in the temperature environment when the device is operated.
- Patent Document 2 discloses an Al bonding wire having improved mechanical strength by adding 0.05 to 1% by weight of scandium (Sc) to Al and precipitating hardening.
- Patent Document 3 an Al wiring material containing one or more of nickel (Ni), silicon (silicon) (Si) and phosphorus (P) in a total of 800 ppm by weight or less has good bonding strength and weather resistance. It is disclosed to present.
- Patent Document 4 contains 0.01 to 0.2% by weight of iron (Fe) and 1 to 20% by weight of Si, and the solid solution amount of Fe is 0.01 to 0.06% by weight.
- An Al bonding wire having a Fe precipitation amount of 7 times or less of the solid solution amount and an average crystal particle size of 6 to 12 ⁇ m is disclosed, and it is described that the wire exhibits good bonding reliability. ing.
- JP-A-2002-314038 Special Table 2016-511529 Japanese Unexamined Patent Publication No. 2016-152316 Japanese Unexamined Patent Publication No. 2014-129578
- a shocking thermal stress is generated due to the temperature change (hereinafter, such a phenomenon is also referred to as “thermal shock"), and the Al wiring material and the connected member are connected.
- the connection with the device may be damaged.
- cracks may occur at the interface of the connecting portion due to the difference in the coefficient of thermal expansion between the Al wiring material and the connected member due to the temperature change accompanying the operation cycle (hereinafter, such a phenomenon is referred to as "the phenomenon”. Also called "bond crack”).
- cracks may also occur in the loop rising portion near the connecting portion due to bending stress due to expansion and contraction of the Al wiring material itself (hereinafter, such a phenomenon is also referred to as “heel crack”). Corrosion in the environment during operation of the device may cause these bond cracks and heel cracks to progress, and eventually the Al wiring material may peel off from the connected member, resulting in impaired joining reliability.
- thermal shock resistance Although some reports have been made on Al wiring materials that have been made stronger by adding other elements to Al, while suppressing a decrease in yield during manufacturing, chip cracks can be suppressed and thermal shock associated with the operation cycle of the device can be suppressed. There was room for improvement in achieving both resistance (hereinafter, also simply referred to as "thermal shock resistance").
- An object of the present invention is to provide an Al wiring material that has both suppression of chip cracks and thermal shock resistance while suppressing a decrease in yield during manufacturing.
- the present inventors have found that the above problems can be solved by an Al wiring material having the following configuration, and have completed the present invention by conducting further studies based on such findings. That is, the present invention includes the following contents. [1] When at least Sc and Zr are contained, the Sc content is x1 [% by weight], and the Zr content is x2 [% by weight]. 0.01 ⁇ x1 ⁇ 0.5 and 0.01 ⁇ x2 ⁇ 0.3 Al wiring material that meets the requirements and the rest contains Al. [2] The Al wiring material according to [1], which further contains Ni and satisfies 10 ⁇ x3 ⁇ 500 when the content thereof is x3 [weight ppm].
- an Al wiring material that has both suppression of chip cracks and thermal shock resistance while suppressing a decrease in yield during manufacturing.
- Al wiring material of the present invention contains at least scandium (Sc) and zirconium (Zr), and is 0.01 when the Sc content is x1 [% by weight] and the Zr content is x2 [% by weight]. It is characterized in that ⁇ x1 ⁇ 0.5 and 0.01 ⁇ x2 ⁇ 0.3 are satisfied.
- Sc raises the recrystallization temperature of the Al wiring material and contributes to suppressing the coarsening of crystal grains and maintaining the strength of the Al wiring material even when the semiconductor device is continuously used in a high temperature environment.
- the larger the amount of Sc added the more the coarsening of crystal grains tends to be suppressed in a high temperature environment.
- disconnection and scratches occur during the production of Al wiring material, and the yield is increased. May decrease, or chip cracks may occur when the Al wiring material is connected to the connected member.
- the intermetallic compound formed between Sc and Al aggregates and coarsens it may adversely affect the generation / growth of bond cracks and heel cracks (that is, accelerate the generation / growth of cracks).
- the Al wiring material of the present invention containing Sc in the range of 0.01 to 0.5% by weight and Zr in the range of 0.01 to 0.3% by weight is used in a high temperature environment. While maintaining the effect of Sc that can suppress the coarsening of crystal grains, it exhibits appropriate strength and hardness before the connection of the Al wiring material, and can suppress the decrease in yield during manufacturing and the occurrence of chip cracks during connection. ..
- the Al wiring material of the present invention suppresses aggregation and coarsening of intermetallic compounds between Al and Sc even when used in a power semiconductor device in which the temperature changes significantly with the operation cycle of the device, resulting in bond cracks and heels. It is possible to remarkably suppress the generation and growth of cracks.
- the Al wiring material of the present invention achieves both suppression of chip cracks and thermal shock resistance while suppressing a decrease in yield during manufacturing, and is a semiconductor whose temperature changes significantly with the operation cycle of the device. This contributes significantly to improving the long-term operational reliability of the device.
- the Al wiring material of the present invention contains Sc as the first element in the range of 0.01 to 0.5% by weight. That is, when the Sc content in the Al wiring material is x1 [% by weight], 0.01 ⁇ x1 ⁇ 0.5 is satisfied.
- the Sc content in the Al wiring material is 0.01% by weight or more, preferably 0. 02% by weight or more, 0.03% by weight or more, 0.04% by weight or more, or 0.05% by weight or more.
- the upper limit of the Sc content x1 is 0.5% by weight or less, preferably 0.48% by weight or less, 0.46% by weight or less, from the viewpoint of suppressing a decrease in yield during manufacturing and chip cracking during connection. It is 0.45% by weight or less, 0.44% by weight or less, 0.42% by weight or less, or 0.4% by weight or less.
- the Al wiring material of the present invention contains Zr as a second element in the range of 0.01 to 0.3% by weight. That is, when the content of Zr in the Al wiring material is x2 [% by weight], 0.01 ⁇ x2 ⁇ 0.3 is satisfied.
- the Al wiring material of the present invention can achieve both suppression of chip cracks and thermal shock resistance while suppressing a decrease in yield during manufacturing.
- focusing only on the improvement of the strength of the Al wiring material it can be achieved to some extent even when Sc is contained alone or Zr is contained alone, but chip crack suppression and thermal shock resistance can be achieved to some extent. Achievement of both is specifically achieved at a particularly high level when Sc and Zr are contained in combination.
- the content of Zr in the Al wiring material is 0.01% by weight or more, preferably 0.02% by weight or more, 0. It is 0.03% by weight or more, 0.04% by weight or more, or 0.05% by weight or more.
- the upper limit of the Zr content x2 is 0.3% by weight or less, preferably 0.28% by weight or less, 0.26% by weight or less, from the viewpoint of suppressing a decrease in yield during manufacturing and chip cracking during connection. It is 0.25% by weight or less, 0.24% by weight or less, 0.22% by weight or less, or 0.2% by weight or less.
- the ratio x2 / x1 of the Sc content x1 [% by weight] and the Zr content x2 [% by weight] is not particularly limited as long as each of x1 and x2 is within the above-mentioned preferable range, and is, for example, 0.05 or more and 0. It can be 1 or more, 0.2 or more, and so on.
- x1 and x2 satisfy the relationship of x2 / x1> 0.5, and more preferably x2 / x1 ⁇ 0.55.
- the upper limit of the x2 / x1 ratio is not particularly limited as long as each of x1 and x2 is within the above-mentioned preferable range, but is preferably 10 from the viewpoint of easily realizing an Al wiring material exhibiting the desired strength in a high temperature environment. It can be less than or equal to (ie, 10 ⁇ x2 / x1), 8 or less, 6 or less, or 5 or less.
- the x2 / x1 ratio is within the above-mentioned preferable range, the benefit of the above-mentioned effect can be further enjoyed especially when 0.15 ⁇ x1.
- the Al wiring material of the present invention may further contain Ni.
- Ni in addition to Sc and Zr, corrosion resistance can be improved, coarsening of crystal grains in a high temperature environment can be further suppressed, and the strength of the Al wiring material can be maintained at a high level. ..
- the content of Ni in the Al wiring material may be in the range of 10 to 500 ppm by weight. That is, when the content of Ni in the Al wiring material is x3 [weight ppm], 10 ⁇ x3 ⁇ 500 may be satisfied.
- the Ni content in the Al wiring material, that is, x3 is preferably 10 ppm by weight.
- the above is more preferably 15% by weight or more, 20% by weight or more, 25% by weight or more, or 30% by weight or more.
- the upper limit of the Ni content x3 is preferably 500 ppm by weight or less, more preferably 450 ppm by weight or less, 400 ppm or less, 350 ppm or less, from the viewpoint of suppressing a decrease in yield during manufacturing and chip cracking during connection. It is 300 ppm or less, 250 ppm or less, 200 ppm or less, 150 ppm or less, or 100 ppm or less.
- the rest of the Al wiring material of the present invention contains Al.
- As the aluminum raw material for producing the Al wiring material it is preferable to use aluminum having a purity of 5N (Al: 99.999% by weight or more) or more.
- the rest of the Al wiring material of the present invention may contain an element other than Al as long as the effect of the present invention is not impaired.
- the Al content in the balance of the Al wiring material of the present invention is not particularly limited as long as the effect of the present invention is not impaired, but is preferably 98% by weight or more, 98.5% by weight or more, 99% by weight or more, 99. 5% by weight or more, 99.6% by weight or more, 99.7% by weight or more, 99.8% by weight or more, or 99.9% by weight or more.
- the remainder of the Al wiring material of the present invention consists of Al and unavoidable impurities.
- the following shows a particularly suitable embodiment as an Al wiring material capable of suppressing chip crack suppression and thermal shock resistance at a high level while suppressing a decrease in yield during manufacturing.
- the Al wiring material of the present invention contains Sc and Zr, and when the Sc content is x1 [% by weight] and the Zr content is x2 [% by weight], 0. It is characterized in that 01 ⁇ x1 ⁇ 0.15 and 0.01 ⁇ x2 ⁇ 0.3 are satisfied, and the balance is composed of Al and unavoidable impurities.
- first embodiment such an embodiment is also referred to as a "first embodiment”.
- the Al wiring material of the present invention contains Sc, Zr and Ni, with a Sc content of x1 [% by weight], a Zr content of x2 [% by weight], and Ni.
- the content of is x3 [weight ppm]
- 0.01 ⁇ x1 ⁇ 0.15, 0.01 ⁇ x2 ⁇ 0.3, 10 ⁇ x3 ⁇ 500 are satisfied, and the balance is composed of Al and unavoidable impurities. It is characterized by.
- such an embodiment is also referred to as a “second embodiment”.
- the Al wiring material of the present invention contains Sc and Zr
- the Sc content is x1 [% by weight]
- the Zr content is x2 [% by weight]. It is characterized in that 0.15 ⁇ x1 ⁇ 0.5 and 0.01 ⁇ x2 ⁇ 0.3 are satisfied, and the balance is composed of Al and unavoidable impurities.
- such an embodiment is also referred to as a "third embodiment”.
- the Al wiring material of the present invention contains Sc, Zr and Ni, with a Sc content of x1 [% by weight], a Zr content of x2 [% by weight], and Ni.
- the content of is x3 [weight ppm]
- 0.15 ⁇ x1 ⁇ 0.5, 0.01 ⁇ x2 ⁇ 0.3, 10 ⁇ x3 ⁇ 500 are satisfied, and the balance is composed of Al and unavoidable impurities. It is characterized by.
- such an embodiment is also referred to as a "fourth embodiment”.
- the Sc content x1 [weight%] and the Zr content x2 are , X2 / x1> 0.5.
- the preferred range of such ratio x2 / x1 is as described above.
- the content of Sc, Zr, Ni, etc. in the Al wiring material can be measured by the method described in [Measurement of element content] described later.
- the Al wiring material of the present invention may or may not have a coating containing a metal other than Al as a main component on the outer periphery of the Al wiring material.
- the Al wiring material of the present invention does not have a coating containing a metal other than Al as a main component on the outer periphery of the Al wiring material.
- the "coating containing a metal other than Al as a main component” means a coating in which the content of the metal other than Al is 50% by weight or more.
- the Al wiring material of the present invention may be an Al bonding wire or an Al bonding ribbon.
- the Al wiring material of the present invention is an Al bonding wire
- its wire diameter is not particularly limited and may be, for example, 50 to 600 ⁇ m.
- the Al wiring material of the present invention is an Al bonding ribbon
- the rectangular or substantially rectangular cross-sectional dimensions (w ⁇ t) are not particularly limited, and for example, w may be 100 to 3000 ⁇ m and t may be 50. It may be up to 600 ⁇ m.
- the method for producing the Al wiring material of the present invention is not particularly limited, and for example, it may be produced using a known processing method such as extrusion processing, aging processing, wire drawing processing, and rolling processing.
- a known processing method such as extrusion processing, aging processing, wire drawing processing, and rolling processing.
- This is melt-mixed to obtain an ingot.
- a mother alloy containing these elements may be used as a raw material for Sc, Zr, Ni and the like.
- This ingot can be processed to the final size to form an Al wiring material.
- the Al wiring material of the present invention in which the content of Sc, Zr and Ni, etc. in the above specific range is within the above-mentioned specific range can be manufactured (processed) while suppressing the occurrence of disconnection and scratches to a level that does not cause a problem in mass production. ..
- solution heat treatment During the processing or after the processing is completed, Sc, Zr and, if contained, Ni and the like are dissolved, so it is preferable to perform solution heat treatment.
- the conditions of the solution heat treatment may be, for example, 570 to 640 ° C. for 30 minutes to 3 hours.
- x2 satisfies 0.01 ⁇ x2 ⁇ 0.15, Sc, Zr, etc. can all be solid-solved during ingot production, so that solution heat treatment is performed. Does not have to be carried out in particular.
- the heat treatment for heat treatment for softening the wire is performed at a subsequent stage.
- a tempering heat treatment may be added during the processing.
- the tempering heat treatment changes the crystal structure of the wire from a processed structure to a recrystallized structure. As a result, the crystal structure becomes a recrystallized structure, so that the wire can be softened.
- the temperature condition of the tempering heat treatment for example, the tensile strength of the tempered wire is confirmed by changing only the temperature inside the furnace at a constant transmission speed, and the heat treatment temperature is set so that the tensile strength is in the range of 60 to 140 MPa. Should be decided.
- the heat treatment temperature may be, for example, in the range of 580 to 640 ° C.
- the tempering heat treatment time is 30 seconds or less (more preferably 25 seconds or less or 20 seconds or less).
- the Al wiring material of the present invention preferably, Sc, Zr, Ni and the like when contained, and their intermetallic compounds are not precipitated by performing the solution treatment in the manufacturing process thereof. Therefore, in the Al wiring material according to a preferred embodiment, when the total content of Sc and Zr in the Al wiring material is 100% by weight, Sc and Sc existing in the phase separated from Al are used as the intermetallic compound phase.
- the total amount of Zr is preferably 5% by weight or less, more preferably 4% by weight or less, 3% by weight or less, 2% by weight or less, or 1% by weight or less.
- the total amount of Sc and Zr present in the intermetallic compound phase in the Al wiring material can be measured by chemical analysis of the electrolytic extraction residue of the Al wiring material.
- the Al wiring material exhibits an appropriate hardness.
- the Vickers hardness of the longitudinal axis portion is 40 Hv or less.
- the longitudinal axis of the Al wiring material is the central axis of the Al wiring material when the Al wiring material is an Al bonding wire, and the Al bonding ribbon having a rectangular or substantially rectangular cross section (w ⁇ t) in the Al wiring material.
- it means the central axis that satisfies the center of w and the center of t.
- the Al wiring material of the present invention has such an appropriate hardness at the time of connection to the connected member, the occurrence of chip cracks can be suppressed.
- the Vickers hardness of the Al wiring material can be measured by the method described in [Measurement of Vickers hardness] described later.
- the average crystal grain size in the cross section (C cross section) perpendicular to the wire longitudinal direction is preferably 1 to 50 ⁇ m. If the average crystal grain size is 1 ⁇ m or more, recrystallization by heat treatment during processing has progressed moderately, and solution heat treatment is performed in the manufacturing process of the Al wiring material to forcibly dissolve the contained components. In combination with this, the Al wiring material is softened, and it is possible to prevent the occurrence of chip cracks during bonding and deterioration of the bondability of the bonded portion. On the other hand, if the average crystal grain size exceeds 50 ⁇ m, it indicates that the recrystallization of the Al wiring material has progressed too much, and the reliability of the joint portion may decrease.
- the average crystal grain size in the C cross section of the Al wiring material can be easily set to 1 to 50 ⁇ m.
- the average crystal grain size is obtained by determining the area of each crystal grain using a measuring method such as EBSD (Electron Backscatter Diffraction Patterns), and the average grain size is taken as the average of the diameters when the area of each crystal grain is regarded as a circle.
- the average crystal grain size of the C cross section of the Al wiring material can be measured by the method described in [Measurement of the average crystal grain size of the C cross section] described later.
- the specific resistance of the Al wiring material of the present invention is preferably 3.6 ⁇ ⁇ cm or less. Further, when the Al wiring material of the present invention is subjected to heat treatment at 300 ° C. for 30 minutes, its specific resistance is preferably 3.0 ⁇ ⁇ cm or less. Since the Al wiring material of the present invention has such a low resistivity, it is possible to reduce the amount of heat generated when the device is operated, (1) recrystallization and softening of the Al wiring material, and (2) suppressing the occurrence and progression of cracks. Therefore, the joining reliability can be ensured even during long-term operation of the semiconductor device.
- the specific resistance of the Al wiring material can be measured by the DC 4-terminal measuring method. For example, using an RM3544-01 manufactured by Hioki Electric Co., Ltd. as a resistance meter, measurement can be performed under the conditions of a sample length of 400 mm and a measurement current of 1 mA. The number of measurements is 5, and the arithmetic mean value can be obtained as the specific resistance value of each sample.
- the Al wiring material of the present invention contains Sc, Zr, and Ni, etc. in the above-mentioned specific amount when contained, and has an appropriate strength by the action of solid solution strengthening and structure control by heat treatment in the wiring material manufacturing process.
- the Al wiring material of the present invention can exhibit a breaking strength of 50 to 130 MPa.
- the breaking strength of the Al wiring material can be measured by the method described in [Measurement of mechanical properties] described later.
- connection between the Al wiring material and the connected member of the present invention is either a first connection with an electrode on a semiconductor chip or a second connection with an electrode on a lead frame or a circuit board (also simply referred to as a "board"). Also, it is carried out by wedge joining. It is preferable to perform aging heat treatment of the semiconductor device containing the Al wiring material after the connection with the connected member. As a result of the aging heat treatment, Sc and Zr in the Al wiring material satisfy the intermetallic compound Al 3 (Sc x, Zr 1-x ) (in the formula, x satisfies 0 ⁇ x ⁇ 1. The same is true.) Is formed, and a fine phase of the intermetallic compound is precipitated.
- the Al wiring material is precipitated and strengthened, and its strength is increased.
- the aging heat treatment conditions are not particularly limited as long as a fine phase of the intermetallic compound Al 3 (Sc x , Zr 1-x ) can be formed, but for example, 250 to 400 ° C. and 30 to 60 minutes are preferable.
- Sc and Zr are added independently to the Al wiring material, Al 3 Sc and Al 3 Zr are formed as intermetallic compounds, respectively.
- the fine phases of Al 3 Sc and Al 3 Zr also have the effect of increasing the strength of the Al wiring material by precipitation strengthening, the present inventors have compared the fine phases of Al 3 Sc and Al 3 Zr with Al.
- the fine phase of 3 (Sc x , Zr 1-x ) has a remarkably low rate of aggregation and coarsening, and in addition, the coarsening of Al (matrix) crystal grains can be remarkably suppressed over a long period of time. It was found that exceptionally excellent thermal shock resistance can be realized.
- the present invention also provides a method for manufacturing a semiconductor device.
- the method for manufacturing a semiconductor device of the present invention Includes (A) a step of connecting an electrode on a semiconductor chip and an electrode on a lead frame or a substrate with the Al wiring material of the present invention, and (B) a step of performing aging heat treatment after connecting with the Al wiring material. To do.
- step (A) As the semiconductor chip, lead frame or substrate used in the step (A), known ones that can be used for forming the semiconductor device may be used as described later. The details and preferred embodiments of the Al wiring material of the present invention used in the step (A) are as described above.
- step (A) both the first connection with the electrode on the semiconductor chip and the second connection with the electrode on the lead frame or the substrate are carried out by wedge bonding.
- step (B) Sc and Zr in the Al wiring material form an intermetallic compound Al 3 (Sc x , Zr 1-x ) with Al, and a fine phase of the intermetallic compound is precipitated.
- a semiconductor device can be manufactured by connecting an electrode on a semiconductor chip with an electrode on a lead frame or a circuit board using the Al wiring material of the present invention.
- the semiconductor device of the present invention includes the Al wiring material of the present invention.
- the Al wiring material of the present invention has both suppression of chip cracks and thermal shock resistance while suppressing a decrease in yield during manufacturing, and a semiconductor device containing the Al wiring material is used in the operation cycle of the device. Excellent operational reliability can be achieved even when the accompanying temperature change is significant.
- the semiconductor device of the present invention includes a circuit board, a semiconductor chip, and an Al wiring material for conducting the circuit board and the semiconductor chip, and the Al wiring material is the Al wiring material of the present invention. It is characterized by.
- the "Al wiring material of the present invention” referred to in the semiconductor device of the present invention refers to Sc, Zr and, if contained, Sc, Zr and, as long as the content of Ni and the like is within the above-mentioned preferable range. It should be noted that this includes the case where at least a part of Ni or the like forms an intermetallic compound with Al.
- the total amount of Sc and Zr present in the phase separated from Al is maintained in a suitable range as the intermetallic compound phase even when the device is operated for a long time in a high temperature environment. It is possible to maintain the intermetallic compound in a fine phase.
- the circuit board and the semiconductor chip are not particularly limited, and known circuit boards and semiconductor chips that can be used to form the semiconductor device may be used.
- a lead frame may be used instead of the circuit board.
- the semiconductor device may be configured to include a lead frame and a semiconductor chip mounted on the lead frame.
- Semiconductor devices are used in electrical products (for example, computers, mobile phones, digital cameras, televisions, air conditioners, solar power generation systems, etc.) and vehicles (for example, motorcycles, automobiles, trains, ships, aircraft, etc.).
- electrical products for example, computers, mobile phones, digital cameras, televisions, air conditioners, solar power generation systems, etc.
- vehicles for example, motorcycles, automobiles, trains, ships, aircraft, etc.
- power semiconductor devices power semiconductor devices
- Aluminum having a purity of 5N (99.999% by weight or more) and Sc, Zr, and Ni having a purity of 99.9% by weight or more were melted as raw materials to obtain an Al ingot having the composition shown in Table 1.
- the ingot was extruded and aged, then heat-treated at 580 ° C. for 2 hours, and further wire-drawn.
- solution heat treatment was performed at 580 ° C. for 1 hour, and quenching (water cooling) was performed.
- the die wire drawing process was performed with the final wire diameter set to 200 ⁇ m, and after the wire drawing process was completed, the heat treatment was performed so that the tensile strength became 120 MPa in the heat treatment time of 15 seconds to obtain an Al wiring material.
- the content of Sc, Zr, Ni, etc. in the Al wiring material can be determined by ICP-OES (“PS3520U VDDII” manufactured by Hitachi High-Tech Science Co., Ltd.) or ICP-MS (“Agilent 7700x” manufactured by Agilent Technologies America, Inc.) as an analyzer. It was measured using ICP-MS ").
- the Vickers hardness of the longitudinal axis portion of the Al wiring material was measured using a Micro Vickers hardness tester (“HM-200” manufactured by Mitutoyo Co., Ltd.). The hardness at the longitudinal axis portion (that is, the center position of the Al wiring material) was measured with the cross section (L cross section) parallel to the longitudinal direction including the longitudinal axis of the Al wiring material as the measurement target surface. The average of the measured values at 5 points was used as the Vickers hardness of the sample.
- the average crystal grain size of the C cross section was measured using the EBSD method (measuring device EBSD analysis system "AZtec HKL] manufactured by Oxford Instruments Co., Ltd.). Specifically, each crystal was measured for the entire C cross section. The area of the grains was obtained, the area of each crystal grain was converted into the area of a circle, the average of the diameters was calculated, and this was adopted as the average crystal grain size. The area of each crystal grain was measured at adjacent measurement points. The position where the azimuth difference between them was 15 degrees or more was defined as the grain boundary and obtained.
- the breaking strength of the Al wiring material was measured by using an Instron tensile tester under the conditions of a distance between gauge points of 100 mm, a tensile speed of 10 mm / min, and a load cell rated load of 1 kN. The measurement was carried out 5 times, and the average value was adopted as the breaking strength of the sample.
- the disconnection rate [times / km] is the number of wire breaks (N [times]) when the die wire is drawn from 1 mm to 200 ⁇ m, and the length of the Al wiring material (wire diameter 200 ⁇ m) after the die wire drawing (wire diameter 200 ⁇ m). It was calculated by the formula: N / L based on L [km]).
- the electrode of the semiconductor chip was an Al-Cu pad, and the external terminal was Ag. Both the first connection portion between the electrode of the semiconductor chip and the Al wiring material and the second connection portion between the external terminal and the Al wiring material are wedge-bonded. After the connection, aging heat treatment was performed at 300 ° C. for 30 minutes.
- Thermal shock resistance was performed by a power cycle test. In the power cycle test, heating and cooling are alternately repeated for the semiconductor device to which the Al wiring material is connected. The heating is performed over 2 seconds until the temperature of the connection portion of the Al wiring material in the semiconductor device reaches 120 ° C., and then cools over 20 seconds until the temperature of the connection portion reaches 30 ° C. This heating / cooling cycle is repeated 100,000 times.
- the joint share strength of the first connection part was measured and the reliability of the connection part was evaluated.
- the share strength measurement was performed as a comparison with the share strength of the initial connection part. 90% or more of the initial connection strength is " ⁇ ", 80% or more is “ ⁇ ", 60% or more is “ ⁇ ”, and less than 60% is “ ⁇ ”. Described in.
- Table 1 shows the manufacturing conditions and manufacturing results.
- Table 1 the numerical values whose content of the additive element is out of the range of the present invention are underlined.
- the present invention example No. Nos. 1 to 9 are described in the first embodiment of the present invention.
- 10 to 22 are described in the third embodiment of the present invention
- Example No. 23 to 35 are the second embodiments of the present invention example No. 36 to 53 correspond to the fourth embodiment, respectively.
- the present invention example No. In No. 53 the Ni content was out of the upper limit of the preferable range, and the value of the disconnection rate was higher than that of other examples of the present invention.
- Comparative Example No. 1 and 2 contained only one of Sc and Zr, and the thermal shock test was x. Comparative Example No. In Nos. 3 and 4, the Sc or Zr content was out of the lower limit of the range of the present invention, and the thermal shock test was ⁇ . Comparative Example No. In Nos. 5 and 6, the Sc or Zr content was out of the upper limit of the range of the present invention, and the chip damage was x.
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Abstract
Description
すなわち、本発明は以下の内容を含む。
[1] 少なくともScとZrを含有し、Scの含有量をx1[重量%]、Zrの含有量をx2[重量%]としたとき、
0.01≦x1≦0.5、及び
0.01≦x2≦0.3
を満たし、残部はAlを含む、Al配線材。
[2] さらにNiを含有し、その含有量をx3[重量ppm]としたとき、10≦x3≦500を満たす、[1]に記載のAl配線材。
[3] x1とx2がx2/x1>0.5の関係を満たす、[1]又は[2]に記載のAl配線材。
[4] Al配線材の長手軸線部のビッカース硬度が40Hv以下である、[1]~[3]の何れかに記載のAl配線材。
[5] 580~640℃にて30秒間以下の調質熱処理に付されてなる、[1]~[4]の何れかに記載のAl配線材。
[6] Al以外の金属を主成分とする被覆を有していない、[1]~[5]の何れかに記載のAl配線材。
[7] ボンディングワイヤである、[1]~[6]の何れかに記載のAl配線材。
[8] 被接続部材との接続後に250~400℃にて30~60分間の時効熱処理に付される、[1]~[7]の何れかに記載のAl配線材。
[9] [1]~[8]の何れかに記載のAl配線材を含む半導体装置。
本発明のAl配線材は、少なくともスカンジウム(Sc)とジルコニウム(Zr)を含有し、Scの含有量をx1[重量%]、Zrの含有量をx2[重量%]としたとき、0.01≦x1≦0.5、及び0.01≦x2≦0.3を満たすことを特徴とする。
本発明のAl配線材は、第1元素として、Scを0.01~0.5重量%の範囲にて含有する。すなわち、Al配線材中のScの含有量をx1[重量%]としたとき、0.01≦x1≦0.5を満たす。
本発明のAl配線材は、第2元素として、Zrを0.01~0.3重量%の範囲にて含有する。すなわち、Al配線材中のZrの含有量をx2[重量%]としたとき、0.01≦x2≦0.3を満たす。
本発明のAl配線材は、さらにNiを含有してよい。ScとZrに加えて、Niを含有することにより、耐食性を向上させ得ると共に、高温環境下における結晶粒の粗大化をより一層抑制しAl配線材の強度を高いレベルにて維持することができる。
加工終了後であって、上記溶体化熱処理を実施した場合はその後の段階で、ワイヤ軟質化のための調質熱処理を行う。加工途中で調質熱処理を付加しても良い。調質熱処理によって、ワイヤの結晶組織を、加工組織から再結晶組織に変化させる。これにより、結晶組織が再結晶組織となるため、ワイヤの軟質化を実現することができる。調質熱処理の温度条件としては、例えば、送線速度一定で炉内温度のみを変更して調質したワイヤの引張強度を確認し、該引張強度が60~140MPaの範囲となるように熱処理温度を決定すればよい。熱処理温度は、例えば、580~640℃の範囲としてよい。好適な一実施形態において、調質熱処理の時間は30秒間以下(より好ましくは25秒間以下又は20秒間以下)である。斯かる短時間の調質熱処理を行うことにより、先述の第3、第4実施形態のようにSc含有量が比較的高い場合であっても、金属間化合物の析出なしに結晶組織を再結晶組織に変化させることができる。
(A)半導体チップ上の電極と、リードフレーム又は基板上の電極とを、本発明のAl配線材により接続する工程、及び
(B)Al配線材による接続の後、時効熱処理を行う工程
を包含する。
本発明のAl配線材を用いて、半導体チップ上の電極と、リードフレームや回路基板上の電極とを接続することによって、半導体装置を製造することができる。
Al配線材中のSc、Zr及びNi等の含有量は、分析装置として、ICP-OES((株)日立ハイテクサイエンス製「PS3520UVDDII」)又はICP-MS(アジレント・テクノロジーズ(株)製「Agilent 7700x ICP-MS」)を用いて測定した。
Al配線材の長手軸線部のビッカース硬度は、マイクロビッカース硬度計((株)ミツトヨ製「HM-200」)を用いて測定を行った。Al配線材の長手軸線を含む、長手方向に平行な断面(L断面)を測定対象面として、長手軸線部(すなわち、Al配線材の中心位置)における硬度を測定した。5箇所の測定値の平均を、そのサンプルのビッカース硬度として採用した。
C断面の平均結晶粒径の測定は、EBSD法(測定装置 オックスフォード・インストゥルメンツ(株)製EBSD分析システム「AZtec HKL])を用いて測定した。詳細には、C断面の全体について各結晶粒の面積を求め、各結晶粒の面積を円の面積に換算してその直径の平均を算出し、これを平均結晶粒径として採用した。なお、各結晶粒の面積は、隣り合う測定点間の方位差が15度以上の位置を粒界と定義して求めた。
Al配線材の破断強度は、Instron製引張試験機を用いて、標点間距離100mm、引張速度10mm/分、ロードセル定格荷重1kNの条件で引っ張り、測定した。測定は5回実施し、その平均値をそのサンプルの破断強度として採用した。
断線率[回/km]は、線径1mmから200μmまでダイス伸線加工した際の断線回数(N[回])と、ダイス伸線加工後のAl配線材(線径200μm)の長さ(L[km])とに基づき、式:N/Lにより算出した。
半導体装置におけるチップクラックは、パッド表面の金属を酸にて溶かし、パッド下を顕微鏡にて観察して評価した(評価数N=50)。クラック及びボンディングの痕跡等も観られない良好な場合を「◎」とし、クラックは無いもののボンディングの痕跡が確認される箇所があるもの(評価数50中、3箇所以下)を「○」とし、それ以外を「×」として、表1の「チップダメージ」欄に記載した。
熱衝撃耐性は、パワーサイクル試験によって行った。パワーサイクル試験は、Al配線材が接続された半導体装置について、加熱と冷却を交互に繰り返す。加熱は、半導体装置におけるAl配線材の接続部の温度が120℃になるまで2秒間かけて加熱し、その後、接続部の温度が30℃になるまで20秒間かけて冷却する。この加熱・冷却のサイクルを10万回繰り返す。
比較例No.3、4は、Sc又はZrの含有量が本発明範囲の下限を外れ、熱衝撃試験が×であった。
比較例No.5、6は、Sc又はZrの含有量が本発明範囲の上限を外れ、チップダメージが×であった。
Claims (9)
- 少なくともScとZrを含有し、Scの含有量をx1[重量%]、Zrの含有量をx2[重量%]としたとき、
0.01≦x1≦0.5、及び
0.01≦x2≦0.3
を満たし、残部はAlを含む、Al配線材。 - さらにNiを含有し、その含有量をx3[重量ppm]としたとき、10≦x3≦500を満たす、請求項1に記載のAl配線材。
- x1とx2がx2/x1>0.5の関係を満たす、請求項1又は2に記載のAl配線材。
- Al配線材の長手軸線部のビッカース硬度が40Hv以下である、請求項1~3の何れか1項に記載のAl配線材。
- 580~640℃にて30秒間以下の調質熱処理に付されてなる、請求項1~4の何れか1項に記載のAl配線材。
- Al以外の金属を主成分とする被覆を有していない、請求項1~5の何れか1項に記載のAl配線材。
- ボンディングワイヤである、請求項1~6の何れか1項に記載のAl配線材。
- 被接続部材との接続後に250~400℃にて30~60分間の時効熱処理に付される、請求項1~7の何れか1項に記載のAl配線材。
- 請求項1~8の何れか1項に記載のAl配線材を含む半導体装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021550614A JPWO2021065551A1 (ja) | 2019-10-01 | 2020-09-17 | |
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EP20873056.4A EP4040448A4 (en) | 2019-10-01 | 2020-09-17 | AL WIRING MATERIAL |
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EP (1) | EP4040448A4 (ja) |
JP (1) | JPWO2021065551A1 (ja) |
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KR20230074994A (ko) * | 2021-11-22 | 2023-05-31 | 삼원동관 주식회사 | 고내열성 알루미늄 합금 |
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- 2020-09-17 WO PCT/JP2020/035337 patent/WO2021065551A1/ja unknown
- 2020-09-17 US US17/764,872 patent/US20220341004A1/en active Pending
- 2020-09-17 EP EP20873056.4A patent/EP4040448A4/en active Pending
- 2020-09-17 CN CN202080069219.0A patent/CN114467167A/zh active Pending
- 2020-09-17 KR KR1020227009855A patent/KR20220064974A/ko unknown
- 2020-09-29 TW TW109133771A patent/TW202122597A/zh unknown
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US20220341004A1 (en) | 2022-10-27 |
KR20220064974A (ko) | 2022-05-19 |
EP4040448A1 (en) | 2022-08-10 |
EP4040448A4 (en) | 2023-09-13 |
CN114467167A (zh) | 2022-05-10 |
TW202122597A (zh) | 2021-06-16 |
JPWO2021065551A1 (ja) | 2021-04-08 |
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