TWI713617B - 積層製造系統、設備及其方法 - Google Patents
積層製造系統、設備及其方法 Download PDFInfo
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- TWI713617B TWI713617B TW105134883A TW105134883A TWI713617B TW I713617 B TWI713617 B TW I713617B TW 105134883 A TW105134883 A TW 105134883A TW 105134883 A TW105134883 A TW 105134883A TW I713617 B TWI713617 B TW I713617B
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Abstract
本發明揭露一種積層製造系統,其包含二維能量圖案化系統,用以粉床成像。也揭露了適用於自動化或半自動化工廠的改良光學系統、腔體設計、粉末處理系統與方法、結構成形、零件創建和運用、多個積層製造系統的使用以及高生產量的製造方法。
Description
本發明通常涉及一種積層製造系統及其方法。在一實施例中,描述了具有二維能量圖案且再利用能量束的粉床熔融製程。
傳統的元件加工經常依賴於透過鑽孔、切割或研磨去除材料以形成零件。反觀,積層製造(也稱為三維列印)通常涉及連續逐層添加材料以構建零件。從三維電腦模型(3D computer model)開始,積層製造系統可用以從各種材料創建複雜零件。
稱為粉床熔融(powder bed fusion,PBF)的一種積層製造技術使用一個或多個聚焦能量源,例如雷射器或電子束,透過熔化粉末的方式在粉末薄層中繪製圖案並將其接合下層。粉末的材質可以是塑膠、金屬或陶瓷。這種技術是高度精確的,並且通常可以實現小至150-300微米(micrometer,μm)的特徵尺寸。然而,粉床熔融積層製造機器的製造商努力創建出每小時可生產超過一公斤列印材料的機器。基於這種緩慢的粉末-固體轉化率以及列印較大零件所需的時間長度,使得機器尺寸相對較小。現今最大的機器的可列印的零件體積通常小於64公升(即40公分見方的立方體的體積)。雖然這些列印機能夠列印幾乎任意幾何形狀的零件,但是由於高機器成本和低粉末轉化率,機器的攤銷成本最終非常高,導致昂貴的零件。
不幸的是,透過簡單地放大機器來增加零件尺寸或降低製造成本是不可接受的解決方案。作為最低限度,為了熔化給定體積的材料,雷射器必須輸送使其達到熔化溫度的足夠能量和熔化所需的相變能量。如果在該過程中熱能沒有耗散,則隨時間蘊蓄的雷射能量(雷射功率)和材料產出率之間存在線性比例。如果粉床熔融積層製造機器的製造商想要增長材料產出率,他們將必然需要增加他們的雷射功率。雷射功率的增加不幸地與雷射器的成本成比例地增加,且按比例增加大大地增加了現今已經昂貴的機器成本。
即使雷射器成本不是一個因素,調整雷射的功率也可能具有其他有害的影響。每種粉末材料具有取決於功率通量的最佳熔化特性。如果功率太低,粉末不會熔化,如果太高,雷射可鑽入材料(鎖孔)。增加已在這些最佳點之一處操作的機器之雷射功率必然需要增加雷射面積(光斑尺寸)以保持最佳功率通量。簡單地增加光斑尺寸會降低可列印的分辨率,同時將雷射分成多個光束會增加系統的複雜性。
實際上,當前可用的粉床積層製造機器可受限於零件尺寸、零件製造成本、零件細節的分辨率和零件製造產量。
本發明揭露一種積層製造系統、設備及其方法。
首先,本發明揭露一種積層製造系統,此系統包含:一高能量光子源,用以產生一光束;一反射圖案化單元,用以接收該光束並反射一二維圖案光束;以及一圖像中繼,用以接收該二維圖案光束並將其聚焦為在一粉床上的一二維圖案。
此外,本發明揭露另一種積層製造系統,包含:一能量束;一光學定址光圖案化單元,其接收該能量束並發射光作為二維圖案化光束,該光學定址光圖案化單元退回不需要形成該二維圖案化光束的能量;一圖像中繼,用於接收該二維圖案化光束並將其作為一二維圖像聚焦在一粉床上;以及一退回能量處理單元,用於重新使用所退回的能量。
另外,本發明揭露一種積層製造設備,包含:一第一光學組件,被配置以接收多個光束,該些光束包含至少一個或多個來自該一個或多個光源的光束,該第一光學組件更被配置以多路復用該多個光束;一光學裝置,被配置以重新成形和混合該多個光束以提供一第一光束;一空間偏振閥,被配置以將一空間偏振圖案施加於該第一光束以提供引導向一粉床的一第二光束,其中,該空間偏振閥被光學定址以形成一二維圖案;一偏振器,被配置以分離該第二光束的偏振態以反射一第三光束;以及一第二光學組件,被配置以重新成形該第三光束為一第四光束,旋轉其偏振態為該第一光束的偏振態,該第二光學組件更被配置以導入該第四光束至該第一光學組件作為該多個光束之一,以產生一第五光束,該第五光束透射該偏振器且不被該偏振器反射。
接者,本發明揭露一種積層製造方法,包含:發射一個或多個光束,該一個或多個光束之每一個光束被偏振化;分離該二個或多個光束之每一個為二個分離光束,每一分離光束分別相應於一多數偏振態或一少數偏振態;空間堆疊相應該多數偏振態之該二個或多個光束之每一個光束的該分離光束,以提供相應於該多數偏振態的一第一光束;空間堆疊相應該少數偏振態之該二個或多個光束之每一個光束的該分離光束,以提供相應於該少數偏振態的一第二光束;應用一多數偏振圖案於該第一光束;應用一少數偏振圖案於該第二光束;結合被圖案化的該第一光束與該第二光束,以提供單光束;以及引導該單光束朝向一粉床。
再者,本發明揭露另一種積層製造方法,該方法包含:透過一封閉空間來限制該封閉空間的內部和該封閉空間的外部之間的氣態物質的一交換;識別位於該封閉空間內的多個機器;由該些機器中的每個機器執行一獨立的積層製造過程,該積層製造過程包括將一圖案化能量束引導到一粉床;以及在執行期間透過一氣體管理系統維持該封閉空間內的氣態氧或水低於大氣水平。
更者,本發明揭露又一種積層製造方法,該方法包含:透過包含在一第一封閉空間內的一第一機器,通過包括使用一圖案化能量束的積層製造之第一過程創建一第一零件,其中該第一零件具有大於或等於2000公斤的重量;在該創建期間由一第一氣體管理系統維持該第一封閉空間內的氣態氧或水低於大氣水平;將該第一零件由該第一封閉空間內穿過一氣室傳輸到該氣室與該第一封閉空間的外部位置,其中該氣室用以緩衝該第一封閉空間內與該第一封閉空間外之間的氣體環境;以及在運輸期間連續地支撐該第一零件的重量。
此外,本發明還揭露一種積層製造方法,包含:提供一能量束;定位一光學定址光圖案化單元以接收該能量束並發射光作為二維圖案化光束,該光學定址光圖案化單元退回不需要形成該二維圖案化光束的能量;中繼該二維圖案化光束並將其作為一二維圖像聚焦在一粉床上;以及利用一退回能量處理單元再利用被退回的能量。
在下面的描述中,係參考形成部分描述的附圖以及實踐本公開的具體示例性實施例。這些實施例被足夠詳細地描述以使得本領域技術人員能夠實踐本文所公開的概念,並且應當理解,在不脫離本發明的範圍的情況下,可以對各種公開的實施例進行修改,且可利用其他實施例。 因此,下面的詳細描述不應被理解為具有限制性的意義。
一種具有一個或多個能量源的積層製造系統,在一實施例中,包含一個或多個雷射器或電子束,被定位為發射一個或多個能量束。光束成形器(Beam shaping optics)可從能量源接收一個或多個能量束並形成單光束。能量圖案化單元接收或產生該單光束並將二維圖案轉移到該單光束,並且可退回在圖案中未使用的能量。圖像中繼(image relay)接收該二維圖案光束並將其作為二維圖像聚焦到高度固定或可移動構建平台(例如:粉床)上的期望位置。在某些實施例中,來自能量圖案化單元的任何被退回的一些或全部能量可再利用。
在一些實施例中,來自雷射陣列的多個光束利用光束均勻器進行結合。該結合的光束可被引導到包括透射式或反射式像素定址光閥(pixel addressable light valve)的能量圖案化單元。在一個實施例中,該像素定址光閥包括具有偏振元件的液晶模組和提供二維輸入圖案的光投射單元。圖像中繼聚焦的二維圖像可順序地朝向粉床上的多個位置,以構建三維結構。
如「第1圖」所示,積層製造系統100具有能量圖案化系統110,其具有能夠將一個或多個連續或間歇的能量束引導向光束成形器114之能量源112。在成形之後,如果需要, 透過能量圖案化單元116將該光束圖案化,其中通常一些能量被引導到退回能量處理單元118。圖案化能量由圖像中繼120中繼朝向物品處理單元140,通常作為聚焦在床146附近的二維圖像122。床146(具有可選的臨時牆148)可形成包含由材料分配器142分配的材料144的腔室。由圖像中繼120引導的圖案化能量可以熔化、熔融、燒結、混合、改變晶體結構、影響應力模式(stress patterns)或者以其它化學或物理方式改質分配的材料144,以形成具有期望性質的結構。
能量源112產生能夠被引導、成形和圖案化的光子(光)、電子、離子或其他合適的能量束或通量。多個能量源可組合利用。能量源112可包括雷射器、白熾燈、集中的太陽能、其他光源、電子束或離子束。可能的雷射器類型包括但不限於:氣體雷射器、化學雷射器、染料雷射器、金屬蒸氣雷射器、固態雷射器(例如:光纖)、半導體(例如:二極體)雷射器、自由電子雷射器、氣動雷射器、類鎳釤雷射器("Nickel-like" Samarium laser)、拉曼雷射器或核泵浦雷射器。
氣體雷射器可以包括多個雷射器,例如:氦-氖雷射器、氬雷射器、氪雷射器、氙離子雷射器、氮雷射器、二氧化碳雷射器、一氧化碳雷射器或準分子雷射器。
化學雷射器可以包括多個雷射器,例如:氟化氫雷射器、氟化氘雷射器、化學氧-碘雷射器(Chemical oxygen–iodine laser,COIL)或全氣相碘雷射器(All gas-phase iodine laser,Agil)。
金屬蒸氣雷射器可以包括多個雷射器,諸如:氦-鎘(HeCd)金屬蒸氣雷射器、氦-汞(HeHg)金屬蒸氣雷射器、氦- 硒(HeSe)金屬蒸氣雷射器、氦-銀(HeAg)金屬蒸氣雷射器、氖-銅(NeCu)金屬蒸氣雷射器、銅蒸氣雷射器、金蒸氣雷射器或錳(Mn / MnCl2
)蒸氣雷射器。
固態雷射器可以包括多個雷射器,諸如:紅寶石雷射器、釹-釔鋁石榴石雷射器(Nd:YAG laser)、釹-鉻-釔鋁石榴石雷射器(NdCrYAG laser)、鉺-釔鋁石榴石雷射器(Er:YAG laser)、銣-氟化釔鋰(Nd:YLF)固態雷射器、釹-釩酸釔(Nd:YVO4
)雷射器、摻釹三硼酸鈣氧釔-摻釹硼酸鈣釔(Neodymium doped yttrium calcium oxoborateNd:YCa4
O(BO3
)3
)或純粹掺钕三硼酸钙氧钇(simply Nd:YCOB)雷射器、釹-玻璃(Nd:Glass)雷射器、鈦藍寶石(Ti:sapphire)雷射器、銩-釔鋁石榴石(Tm:YAG)雷射器、鐿-釔鋁石榴石(Yb:YAG)雷射器、三氧化二鐿(Ytterbium:2O3
)(玻璃或陶瓷)雷射器、摻鐿玻璃雷射器(棒、板/芯片和光纖)、鈥-釔鋁石榴石(Ho:YAG)雷射器、鉻-硒化鋅(Cr:ZnSe)雷射器、摻鈰鋰鍶(或鈣)氟化鋁(Ce:LiSAF,Ce:LiCAF)雷射器、摻鏂147的磷酸鹽玻璃(147Pm + 3:glass)固態雷射器、摻鉻的金綠寶石(alexandrite)雷射器、摻鉺及鉺鐿共摻玻璃雷射器 、三價鈾摻雜的氟化鈣(U:CaF2
)固態雷射器、二價釤摻雜的氟化鈣(Sm:CaF2
)雷射器或鐵離子中心雷射器(F-Center laser)。
半導體雷射器可以包括多個雷射器,諸如:氮化鎵(GaN)、氮化銦鎵(InGaN)、磷化銦鎵鋁(AlGaInP)、砷化鋁鎵(AlGaAs)、磷砷化銦鎵(InGaAsP)、磷化銦鎵(GaInP)、砷化銦鎵 (InGaAs)、氧砷化銦鎵(InGaAsO)、銻砷化鎵銦(GaInAsSb)、鉛鹽、垂直空腔表面發光雷射器(Vertical cavity surface emitting laser,VCSEL)、量子級聯雷射器(Quantum cascade laser)、混合矽晶雷射器(Hybrid silicon laser)或其組合。
例如,在一個實施例中,單個釹-釔鋁石榴石調Q雷射器(single Nd:YAG q-switched laser)可與多個半導體雷射器結合使用。在另一個實施例中,一個電子束可與紫外線半導體雷射陣列結合使用。在其他實施例中,可使用二維陣列的雷射器。在一些實施例中具有多個能量源,能量束的預圖案化可透過選擇性地活化和去活化能量源來完成。
光束成形單元114可包括各種成像光學元件以結合、聚焦、發散、反射、折射、均勻化、調節強度、調節頻率或以其它方式成形,並將從能量源112接收的一個或多個能量束引導向能量圖案化單元116。在一個實施例中,可使用波長選擇鏡(例如:分光鏡)或繞射元件來結合具有不同光波長的多個光束。在其他實施例中,可使用多面反射鏡(multifaceted mirrors)、微透鏡以及折射式或繞射式光學元件來均勻化或結合多個光束。
能量圖案化單元116可包括靜態或動態能量圖案化元件。例如:光子、電子或離子束可被具有固定或可移動元件的遮罩阻擋。為了增加圖像圖案化的靈活性和容易性,可使用像素可定址遮罩、圖像生成或透射。在一些實施例中,能量圖案化單元包括定址光閥(addressable light valves),單獨或與其它圖案化機構結合以提供圖案成形。該光閥可以是透射式、反射式或者使用透射式和反射式元件的組合。可使用電或光定址動態地修改圖案。在一個實施例中,透射式光定址光閥用於旋轉穿過光閥的的偏振光,光定址像素形成由光投射源限定的圖案。在另一個實施例中,反射式光定址光閥包括用於修改讀取光束的偏振之寫入光束。在又一個實施例中,電子圖案化裝置從電或光子激發源接收地址圖案(address pattern),並產生圖案化的電子發射。
退回能量處理單元118用於分配、重定向或利用未被圖案化且穿過能量圖案的圖像中繼120之能量。在一個實施例中,退回能量處理單元118可包括移除來自能量圖案化單元116的熱能之被動或主動冷卻元件。在其他實施例中,退回能量處理單元118可包括“束集堆”(beam dump)以吸收並轉換加熱在限定能量圖案時未使用的任何光束能量。在其他實施例中,可使用光束成形器114再生利用退回的光束能量。或者,或另外,可將退回的光束能量引導到物品處理單元140,用於加熱或進一步圖案化。在某些實施例中,退回的光束能量可被引導到另外的能量圖案化系統或物品處理單元。
圖像中繼120從能量圖案化單元116接收的圖案化圖像(通常為二維)並引導其朝向物品處理單元140。以類似於光束成形器114的方式,圖像中繼120可包括光學元件以結合、聚焦、發散、反射、折射、調節強度、調節頻率或以其它方式成形和引導圖案化圖像。
物品處理單元140可以包括有圍牆的腔室148、床146以及用於分配材料的材料分配器142。材料分配器142可分配、移除、混合、提供等級、改變材料類型或粒子大小或者調整材料層的厚度。該材料可包括金屬、陶瓷、玻璃、聚合物粉末、能夠經歷熱致相變從固體到液體和再次返回的其它可熔材料或其組合。該材料還可包括可熔融材料和不可熔化材料的複合材料,其中任一或兩個成分可透過圖像中繼系統選擇性地對準熔化可熔化的成分,而留下不可熔化成分或使其經歷汽化/破壞/燃燒或其他破壞性過程。在某些實施例中,可使用漿料、噴霧、塗層、線、條或片狀材料。多餘的材料可一次性移除或透過使用鼓風機、真空系統、掃除、振動、搖動、傾斜或倒置床146而再生利用。
除了材料處理元件之外,物品處理單元140可包括用於持有和支撐3D結構的元件、用於加熱或冷卻腔室的機構、輔助或支撐的光學元件以及用於監視或調整材料或環境條件的傳感器和控制機構。物品處理單元可全部或部分地支撐真空或惰性氣體氣氛,以減少多餘的化學相互作用以及減輕火災或爆炸的風險(特別是對於活性金屬)。
控制處理器150可被連接以控制積層製造系統100的任何元件。控制處理器150可連接到各種傳感器、致動器、加熱或冷卻系統、監視器和控制器以協調運行。廣泛的傳感器,包括成像器、光強度偵測器、熱、壓力或氣體傳感器,可用於提供用於控制或監測的信息。控制處理器可以是單個中央控制器,或者可以包括一個或多個獨立的控制系統。控制器處理器150設置有允許製造指令輸入的介面。使用廣泛的傳感器允許各種提高品質、製造產量和能量效率的反饋控制機構。
「第1B圖」為支撐材料144的床146之草圖說明。使用一系列順序應用的二維圖案化能量束圖像(虛線輪廓的正方形124)積層地製造的結構149。應當理解,可使用具有非方形邊界的圖像圖案,可使用重疊或相互穿透的圖像,且可透過兩個或更多個能量圖案化系統提供圖像。在其他實施例中,可結合定向電子或離子束,或使用列印或選擇性噴霧系統形成圖像。
「第2圖」為說明由光學和機械元件支撐的積層製造程序的一個實施例流程圖。在步驟202中,材料被定位在床、腔室或其他合適的支撐件中。材料是能夠被熔化、熔融、燒結、誘導以改變晶體結構、受到應力模式影響或者以其它化學或物理方式改質以形成具有期望性質的結構的粉末。
在步驟204中,未圖案化的能量係通過一個或多個能量發射器所發射,該能量發射器包括但不限於固態或半導體雷射器,或使電子沿著導線流動的電源。在步驟206中,對未被圖案化的能量進行成形和改變(例如:強度調變或聚焦)。在步驟208中,對這種未圖案化的能量進行圖案化,其中在步驟210中處理未形成圖案的一部分的能量(這可包括轉換為廢熱或再生利用為圖案化或未圖案化的能量)。在步驟212中,此時形成二維圖像的圖案化能量被中繼向材料。在步驟214中,將圖像應用於構建3D結構的一部分之材料。這些步驟可重複(迴路218),直到圖像(或不同且後續的圖像)已經被應用到材料頂層的所有必要區域。當材料頂層的能量應用完成時,可應用新的一層(迴路216)以繼續構建3D結構。當剩餘的多餘材料可被去除或再生利用時,迴路這些步驟持續直到完成3D結構。
「第3A圖」為一種使用多個半導體雷射器作為能量圖案化系統310之積層製造系統300的一個實施例。控制處理器350可連接到各種傳感器、致動器、加熱或冷卻系統、監視器和控制器以協調運作多個雷射器312、光圖案化單元316、圖像中繼320以及系統300的任何其它元件。這些連結通常由圍繞系統300的元件之虛線輪廓351所表示。應當理解,連結可為有線或無線,連續或間歇,並且包括反饋能力(例如:調整熱量加熱以響應感測到的溫度)。多個雷射器312可發射,例如:90毫米(millimeter,mm)寬和20mm高之1000奈米(nanometer,nm)波長的光束301。光束301由成像光學元件370調整大小,以產生光束303。光束303為6mm寬和6mm高,並且入射於光均勻化裝置372,光均勻化裝置372將光混合在一起以產生混合光束305。然後光束305入射到成像組件374,成像組件374將光重新成形為光束307,然後光束307入射到熱/冷鏡376。熱冷/鏡376允許1000nm波長的光通過,但是反射450nm波長的光。能夠投射1080p像素分辨率和450nm波長的低功率光之光投影儀378發射光束309,然後光束309入射到熱/冷鏡376。光束307和光束309重疊於光束311,且兩者皆成像於光學定址光閥(optically addressed light valve)380為一個20mm寬和20mm高的圖像。從光均勻化裝置372和光投影儀378所形成的圖像被重新創建並重疊在光閥380上。
光學定址光閥380被光(通常波長在400-500nm範圍內)激發並且印記偏振旋轉圖案於入射在偏振器382上的透射光束313中。偏振器382分離兩種偏振狀態,透射p偏振為光束317,並將s偏振反射為光束315,然後將光束315發送到處理退回能量的束集堆(beam dump)318。 應當理解,在其他實施例中,偏振可以反轉,其中s偏振形成光束317,並將p偏振反射為光束315。光束317進入最終成像組件320,其中,最終成像組件320包括調整圖案化光的尺寸之光學元件384。 該光束從可移動鏡386反射為光束319,光束319終止於應用到物品處理單元340中的材料床344之聚焦圖像。圖像中被選擇以跨越多層的景深在幾層的誤差或偏移範圍內提供最佳焦點。
床390可在包含由材料分配器342分配的材料344之腔室壁388內升高或降低(垂直指標)。在某些實施例中,床390可以保持固定,且最終成像組件320的光學元件可以垂直升高或降低。材料分佈係由清掃機構392所提供,清掃機構392可以均勻地散佈料斗394中的粉末,能夠根據需要提供新的材料層。 6mm寬和6mm高的圖像可以由可移動鏡386在床的不同位置處順序地引導。
當在該積層製造系統300中使用陶瓷粉末或金屬材料粉末時,粉末可於構建零件時在基座基板(和隨後的層)的頂部上以大約1-3個顆粒厚度的薄層散佈。當粉末透過圖案化光束319熔化、燒結或熔融時,其接合到下面的層,產生固體結構。圖案化光束319可於40赫茲(Hertz,Hz)的脈衝方式運行,以10毫秒(millisecond,ms)至0.5ms的間隔移動到隨後的6mm×6mm圖像位置(優選為3ms至0.1ms),直到所選擇之粉末的圖案化區域已熔化。然後床390將其自身降低對應於一層的厚度,且清掃機構392散佈新的粉末材料層。重複該過程直到2D層已經建構期望的3D結構。在某些實施例中,物品處理單元340可具有受控氣氛。這允許在惰性氣體或真空環境中製造反應物質,而沒有氧化或化學反應,或者火災或爆炸(如果使用活性金屬)的風險。
「第3B圖」更詳細地說明第3A圖的光圖案化單元316的運作。如第3B圖所示,一個代表性輸入圖案333(這裡被視為數字“9”)被限定在8×12像素陣列中作為光束309被投射到熱/冷鏡376。每個灰色像素表示光填充像素(light filled pixel),而白色像素為不亮。在實踐上,每個像素可以具有不同水平的光,包括無光、部分光強度或最大光強度。形成光束307之未圖案化的光331被引導並穿過熱/冷鏡376,並於熱/冷鏡376處與圖案化光束309結合。在由熱/冷鏡376反射之後,由光束307和光束309重疊形成的圖案化光束311被成像到光學定址光閥380上。將旋轉未圖案化光331的偏振狀態之光學定址光閥380由圖案化光束309、311激發,以選擇性地不旋轉數字“9”的圖案中的偏振光307、311的偏振狀態為光束313。然後光束313中代表圖案333的未旋轉光被允許穿過偏振器反射鏡382,產生光束317和圖案335。第二旋轉狀態的偏振光被偏振器反射鏡382退回為光束315,光束315具有由無光數字“9”組成的負像素圖案337。
其他類型的光閥可替代或與所描述的光閥組合使用。 也可以使用反射式光閥或基於選擇性繞射或折射的光閥。在某些實施例中,可以使用非光學定址光閥。這些可包括但不限於電氣定址的像素元件(electrically addressable pixel elements)、可移動鏡或微鏡系統、壓電或微致動光學系統、固定或可移動遮罩或屏蔽,或能夠提供高強度光圖案化的任何其它常規系統。對於電子束圖案化,這些閥可基於定址位置選擇性地發射電子,從而在離開閥的電子束上施加圖案。
「第3C圖」為包括能夠再利用圖案化二維能量的開關場系統之積層製造系統的一個實施例。類似「第1A圖」所討論的實施例,積層製造系統220具有能量圖案化系統,能量圖案化系統具有能量源112,能量源112將一個或多個連續或間歇的能量束引導向光束成形器114。在成形之後,可透過能量圖案化單元230二維圖案化該光束,通常一些能量被引導到退回能量處理單元222。圖案化能量被一個或多個圖像中繼232中繼朝向一個或多個物品處理單元234A、234B、234C或234D,通常作為聚焦在可移動或固定高度的粉床附近之二維圖像。床(具有臨時牆)可形成包含由材料分配器分配的材料之腔室。由圖像中繼232引導的圖案化能量可以熔化、熔融、燒結、混合、改變晶體結構、影響應力模式或者以其他化學或物理方式改質所分配的材料,以形成具有期望性質的結構。
在這個實施例中,退回能量處理單元具有多個元件以允許再使用退回的圖案化能量。中繼228A、228B和228C可分別將能量傳遞到發電機224、加熱/冷卻熱管理系統225或能量轉儲(energy dump)226。隨意地,中繼228C可將圖案化能量引導到圖像中繼232以進一步處理。在其他實施例中,圖案化能量可由中繼228C引導到中繼228B和228A,以介入到能量源112所提供的能量束中。重新使用圖案化圖像也可能使用圖像中繼232。圖像可以被重定向、 倒置、鏡像、子圖案化或以其它變換方式,以分佈到一個或多個物品處理單元234A-234D。有利地,圖案化光的再使用可提高積層製造程序的能量效率,並且在一些情況下提高引導到床的能量強度或減少製造時間。
「第3D圖」為說明再生利用退回能量束的簡單幾何變換的草圖235。輸入圖案236被引導到能夠提供鏡像像素圖案238的圖像中繼237A。應當理解,更複雜的像素變換是可能的,包括幾何變換或單個像素和像素組的圖案重新映射。替代於束集堆中被浪費,該重新映射的圖案可被引導到物品處理單元,以提高製造產量或束強度。
「第3E圖」為說明重新使用退回能量束的多次轉換之草圖235。輸入圖案236被引導到能夠提供像素圖案239的一系列圖像中繼237B-237E。
「第3F圖」和「第3G圖」基於能量束系統240說明非光(non-light),能量束系統240包括能夠產生例如“P”形像素圖像的圖案化電子束24。高壓電力系統243連接到光學定址圖案化陰極單元245。響應透過投影儀244之二維圖案化圖像的應用,無論圖案化圖像被光學定址在哪裡,陰極單元245被激發以發射電子。 電子束圖案的聚焦由包括成像線圈246A和246B的圖像中繼系統247提供。圖案化圖像的最終定位由偏轉線圈248提供,偏轉線圈248能夠將圖案化圖像移動到積層製造元件249的床上的期望位置。
在支撐光再循環和再利用的另一個實施例中,提供來自一個或多個光源之多路復用多個光束。多個光束可被重塑和混合以提供第一光束。空間偏振圖案可應用在第一光束以提供第二光束。第二光束的偏振態可被分離以反射第三光束,該第三光束可被再成形為第四光束。第四光束可被引導作為多個光束之一,以產生第五光束。實際上,這種或類似的系統可降低與積層製造系統相關的能量成本。透過收集、光束組合、均勻化和再引入透過運行在極化修改模式的空間偏振閥或光閥所退回的多餘光,整體透射光功率可潛在地不受由光閥應用的圖案影響。這有利導致穿過光閥的光有效地重新分佈成所期待的圖案,與圖案化的區域量成比例增加光強度。
將來自多個雷射器的光束組合成單個光束係為增加光束強度的一種方式。在一個實施例中,可使用波長選擇鏡或繞射元件來組合每個具有不同光波長的多個光束。在某些實施例中,對波長相關的折射效應不敏感的反射光學元件可用於引導多波長光束。
可使用可移動鏡、稜鏡、繞射光學元件或不需要實質性物理移動的固態光學系統來引導圖案化的光。在一個實施例中,可為積層製造的三維(3D)列印作業確定與粉床頂面位置上的入射光強度和像素尺寸相關聯的放大率和圖像距離。多個透鏡組件中的一個可配置以提供具有放大率的入射光,透鏡組件皆具有第一組光學透鏡和第二組光學透鏡,且透鏡組件的第二組光學透鏡可從該些透鏡組件交換(swappable)。安裝在補償支架上的一組或多組反射鏡之旋轉和安裝在構建平台支架上的最終反射鏡可用於將來自前導鏡(precursor mirror)的入射光引導到粉床的頂面位置。補償支架和構建平台支架的平移運動還能夠確保入射光從前體鏡到粉床的頂面位置的距離基本上等於圖像距離。實際上,這能夠跨越用於不同粉末材料的建造區域的位置上快速改變光束輸送尺寸和強度,同時確保系統的高可用性。
在某些實施例中,多個構建腔室(每個構建腔室具有用於支承粉床的構建平台)可與被配置成接收且引導一個或多個入射能量束到構建腔室中的多個光機組件(optical-mechanical assemblies)一起使用。多個腔室允許在一個或多個構建腔室內同時列印一個或多個列印作業。 在其它實施例中,可移除的腔室側壁可簡化從構建腔室移除列印物體,允許粉末材料的快速更換。該腔室也可配備有調節過程的溫度控制。
在另一實施例中,一個或多個構建腔室可具有維持在固定高度的構建腔室,而光學元件可垂直移動。透鏡組件的最終光學元件和粉床的頂面之間的距離可透過向上指示最終光學元件被管理為基本上恆定,相當於粉末層的厚度的距離,同時將構建平台保持在固定的高度。有利地,與垂直移動構建平台相比,由於不需要構建平台精確的微米級移動,因此可以更容易地製造大且重的物體。 通常,體積大於約0.1-0.2立方米(即,大於100-200公升或比500-1,000公斤重)的金屬粉末之構建腔室將最大受益於將構建平台保持在固定高度。
在一個實施例中,粉床層的一部分可選擇性地熔融或熔融以在粉床層的熔融部分之外形成一個或多個臨時牆,以包含構建平台上另一部分的粉床層。在選擇的實施例中,流體通道可以形成在一個或多個第一壁中,以能夠改善熱管理。
改善的粉末處理可以是積層製造系統的另一方面改善。支承粉床的構建平台能夠傾斜、翻轉和搖動,以使粉床基本上與料斗中的構建平台分離。形成粉床的粉末材料可被收集在料斗中,以便在以後的列印作業中再次使用。粉末收集過程可為自動化,且真空或氣體噴霧系統也用於輔助粉末移除和去除。
所公開的積層製造系統的一些實施例可配置為容易處理比可用腔室更長的零件。連續(長)零件可以在縱向方向上從第一區域順序地前進到第二區域。在第一區中,粒狀材料的選定顆粒可以混合。在第二區中,可以除去粒狀材料的未混合顆粒。連續零件的第一部分可以從第二區域前進到第三區域,而連續零件的最後部分在第一區域內形成,且第一部分在側向和橫向上保持在相同位置,該第一部分在該第一區域和該第二區域內被佔據。實際上,積層製造和清潔(例如,未使用的或未混合的粒狀材料的分離和/或回收)可以在零件輸送機上的不同位置或區域處並行地(即,同時)進行,而不需要停止粒狀材料和/或零件的移除。
在另一個實施例中,可透過使用限制在封密空間的內部和外部之間的氣態物質交換之封密空間來提高積層製造能力。氣室(airlock)在內部和外部之間提供介面﹔其中內部具有多個積層製造腔室,積層製造腔室包括支撐粉床熔融的那些。氣體管理系統將內部的氣體氧維持在或低於限制的氧濃度,增加了可用於系統中的粉末類型和處理的靈活性。
在另一製造實施例中,可透過包含在封閉空間內的3D列印機來改善能力,列印機能夠創建具有大於或等於2,000公斤重量的零件。氣體管理系統可將封閉空間內的氣態氧保持在低於大氣水平的濃度。在一些實施例中,輪式車輛可透過氣室從封閉空間內部傳送零件,因為氣室用於緩衝封閉空間內和封閉空間外之間的氣態環境且位於封閉空間和氣室的外部位置。
其它製造實施例包含在粉床熔融積層製造系統中實時收集粉末樣品。擷取者系統(ingester system)用於過程中之粉末樣品的收集和特性。可周期性地進行收集,且表徵的結果導致對粉床熔融過程的調節。擷取者系統可任選地用於一個或多個審核、過程調節或者諸如修改列印機參數或驗證許可粉末材料的正確使用之動作。
可透過使用諸如起重機、起重龍門架(lifting gantry)、機器手臂或其類似物之操縱裝置來提供對積層製造過程的另一種改進,操縱裝置允許對人類難以或不可能移動的零件進行操縱。操縱裝置可在零件上抓握各種永久或臨時的積層製造操縱點,以能夠重新定位或操縱該零件。
「第4A圖」說明具有多個波長的半導體雷射器且使用透射式成像光學元件的光束組合系統400。應當理解,所討論的雷射功率和波長為例示性,由波長濾波器反射或透射的選定波長也是例示性。隨著波長濾波器的定位和使用的適當改變,可使用更多或更少數量的雷射器。在某些實施例中,固態雷射器可被取代或與半導體雷射器組合使用。在其它實施例中,可使用諸如關於「第1圖」所討論的其它雷射器類型,包括氣體、化學或金屬蒸氣雷射器。在一個實施例中,退回光的再循環和再利用可替代雷射器。在積層製造系統中可用的退回光可被收集、均勻化並重新引入束線(beam line)中。有利地,再循環和再使用退回光可增加光束強度並降低與系統相關的能量成本。
在「第4A圖」中,第一波長(1020nm)的半導體雷射器406發射相應波長的33.3千瓦(kW)光子束407,第二波長(1000nm)的半導體雷射器408發射相應波長的33.3kW光子束409,然後使用傳輸1020nm光子但反射1000nm光子的波長濾波器410進行組合。這產生66.6kW的組合雙波長光束411。第三波長(980nm)的半導體雷射器412發射相應波長的33.3kW光子束413,然後使用波長濾波器414組合光子束413與光束411。波長濾波器414透射1020nm光束和1000nm光束,但反射980nm光束,產生99.9kW的三波長光束415。第四波長(960nm)的半導體雷射器417發射相應波長的33.3kW光子束418,然後使用透射1020nm、1000nm和980nm光子但反射960nm光子的波長濾波器416組合光子束418與光束415,產生133.2kW的四波長光束419。四波長光束419以例如20mm×20mm的光束尺寸進入光學成像系統,且在透鏡420處的發散角度為1.1度。透鏡420是使用兩種材料C79-79和ULE7972的一系列透鏡,每種材料具有不同的折射率,以抵消波長變化對光束成像能力的影響。光束在一系列透鏡421處離開光學系統,一系列透鏡421為利用三種材料,ZeruDur、ULE7972和C79-79,的一系列透鏡,以抵消波長變化對光束成像能力的影響。在422處的光束由於穿過光學系統而在強度上增加,且此刻為6mm寬×6mm高,3.67度的發散角度,產生強度為370kW/cm2
,足以用於金屬,如粉末狀不銹鋼,的積層製造加工。
為獲得最佳性能,需要適當選擇透鏡材料。諸如透鏡420的透射式光學元件可用熔融矽石玻璃製成。這減少了由於在接近1000nm波長處之極低的吸收係數而導致的熱膨脹問題,且由於熱膨脹係數非常低的熔融矽石(fused silica)而降低了透鏡的熱膨脹。熔融矽石的使用考慮光學元件在不加熱和可導致斷裂、玻璃折射率的變化、玻璃形狀的變化以及隨後的焦點變化之膨脹的情況下承受高很多的強度。也可透過使用兩種或更多種材料來減少多餘的光學變化。每種材料可具有隨不同波長而變化的不同折射率。在適當的組合中使用,折射率和光程長度的變化相互抵消,且作為波長函數的焦距沒有變化。
「第4B圖」說明包括多個波長半導體雷射器的組合且使用反射式成像光學元件之替代光束組合系統401,以減少前述討論與透射式光學元件相關聯的問題。類似於第4A圖的光束組合系統400。應當理解,系統401中所討論的雷射功率和波長為示例性,由波長濾波器反射或透射的選定波長也是示例性。隨著波長濾波器的定位和使用的適當改變,可以使用更多或更少數量的雷射器。可以使用多種類型的雷射器,且在一個實施例中,退回光的再循環和再利用可以代替雷射器。在積層製造系統中可用的退回光可被收集、均勻化並重新引入束線中。有利地,反射式光學元件改善了在啟動瞬變期間和在其生命期間與半導體雷射器啾頻(chirp)(波長隨時間的偏移)相關聯的問題。反射式光學元件的使用防止由於這種效應引起的二極體雷射器聚焦的失諧,且不影響所實現的分辨率或成像能力。此外,透過使用反射式光學元件,由雷射器工作溫度變化引起的波長變化不影響分辨率或成像能力。
在「第4B圖」中,第一波長(1020nm)的半導體雷射器423發射相應波長的33.3kW光子束424,第二波長(1000nm)的半導體雷射器425發射相應波長的33.3kW光子束426。使用透射1020nm光子但反射1000nm光子的波長濾波器427組合光子束424和光子束426,得到66.6kW的雙波長光束428。第三波長(980nm)的半導體雷射器429發射相應波長的33.3kW光子束430。使用波長濾波器431組合光子束430與光束428得到99.9kW的三波長光束432,其中波長濾波器透射1020nm和1000nm,但是反射980nm。第四波長(960nm)的半導體雷射器433發射相應波長的33.3kW光子束434。使用透射1020nm、1000nm和980nm光子但反射960nm光子的波長濾波器435將三波長光束432與光束434組合,得到133.2kW的四波長光束436。四波長光束436以,例如20mm×20mm的光束尺寸和在反射式光學元件437處1.1度的發散角度,進入光學成像系統。反射式光學元件不依賴於波長,且不影響光束成像的能力。光束在反射式光學元件438處離開光束組合系統401。光束439由於穿過光學系統而強度增加,並且此刻為6mm寬×6mm高,3.67度的發散角度,產生強度370kW/cm2
,足以用於金屬,如粉末狀不銹鋼,的積層製造加工。
「第4C圖」說明組合來自相同或多個波長雷射器442的光束443之光束組合系統440的替代實施例,光束組合系統440使用繞射式成像光學元件444。繞射式光學元件可成形或圖案化以接收光束443,並將其沿著基本相同的光束軸反射。應當理解,雖然在第4C圖中說明反射光束的繞射式光學元件,在其他實施例中,繞射式光學元件可透射光束,或者使用反射式、透射式或其他合適的光束操縱光學組件或元件的組合。
「第5A圖」為可用於如本文所公開的積層製造系統中的反射式光學定址光閥系統500A。反射式光閥不需要透過用於光圖案化的透明半導體透射光,其中在高平均功率水平下,即使少量的吸收也可能引起多餘的和災難性的加熱。反射式光閥還可允許在反射表面上更易於冷卻,而在寫入光束和讀取光束入射的相對側上具有冷卻。
如「第5A圖」所示,反射式光學定址光閥系統500A能夠圖案化能量束,且由高透射層501、扭轉向列(TN)液晶層502和光電導體層503組成。高透射層對於1000nm和700nm的光是光學透明的,由在兩側上具有抗反射塗層504和506的玻璃基板(C79-79熔融矽石)製成。將銦錫氧化物(ITO)導電塗層505施加到高透射層501。TN液晶層502透過錨定基板(anchoring substrates)507和509固定到506和510。透過間隔球508的尺寸給出TN液晶層502的精確間隔,間隔球508限定2.5微米的間隙,當在雙程(double pass)中通過1000nm的光時被調整為最大對比度。光電導體層503由在510處具有高反射電介質塗層的單晶矽半導體製成,其對700nm的光是透明的,但反射1000nm的光。層511是另一ITO層,其具有附加的焊點512,且通過AC電壓源514連接另一焊點513而連接到ITO導電塗層505。從700nm的投影源發射圖案化的寫入光束,並在透射通過504、501、505、506、507、502、509和510之後入射在503上。在寫入光束照射光電導體層503的地方,電子從共價帶(valence band)移動到傳導帶(conduction band),大大地增加了光電導體層503的局部電導率,允許電流從ITO層511通過503、510、509、502、507和506流到505。當電流流過TN液晶層502時,其引起液晶層502旋轉,造成透射光的偏振旋轉。“讀取”光束516為p偏振,並在透射通過504、501、505、506、507、502和509之後入射在510上,在該點將其反射並透射回去,通過509、502、507、506、505、501和504,以離開光閥系統500A。然後該光束入射到偏振器517,偏振器517反射s偏振產生反射光束518,並透射p偏振產生透射光束519。即使裝置的吸收非常低,HR塗層509也不是完全反射,部分能量被吸收。該能量通過輻射、傳導或對流冷卻520移除。
「第5B圖」說明替代的反射式光學定址光閥500B,在寫入光束和讀取光束從不同側入射的一側上具有冷卻。該光閥由高透射層521、扭曲向列(TN)液晶層522和光電導體層523組成。高透射層對於1000nm和700nm的光是光學透明的,由在兩側上具有抗反射塗層524和526的玻璃基板(C79-79熔融矽石)所製成。將銦錫氧化物(ITO)導電塗層525施加到高透射層521。TN液晶層522通過錨定基板527和529固定到526和530。透過間隔球528的尺寸給出TN液晶層502的精確間隔,間隔球528限定2.5微米的間隙,當在雙程中通過1000nm的光時調節最大對比度。光電導體層523由在530處具有高反射電介質塗層的單晶矽半導體製成,其反射1000nm的光。層531是另一ITO層,其具有附加的焊點532,並通過AC電壓源534藉由連接另一焊點533而連接到ITO導電塗層525。從700nm的投影源發射圖案化的寫入光束,並在通過可選的對流/導電基板540和通過ITO層531傳輸之後入射在光電導體層523上。在寫入束照射503的地方,電子從共價帶移動到傳導帶,大大增加了光電導體層523的局部電導率,允許電流從531流動到523、530、529、522、527和526到525。當電流流過TN液晶層522時,其引起液晶層522旋轉,造成透射光偏振旋轉。“讀取”光束536為p偏振,並在透射通過524、521、525、526、527、522和529之後入射在530上,在該點將其反射並透射回去通過529、522、527、526、525、521和524以離開光閥。然後,該光束入射到偏振器537,偏振器537反射s偏振產生反射光束538,並透射p偏振產生透射光束539。即使裝置的吸收非常低,HR塗層529也不是完全反射,一些能量被吸收。該能量通過輻射、傳導或對流冷卻540移除。
為了幫助更好地理解和評價各種系統實施例,包括適於自動化或半自動化工廠之替代或附加的光學系統、腔室設計、粉末處理系統和方法、結構形成、零件創建和運用、多個積層製造系統的使用以及高生產量的製造方法﹔以下公開將有助於理解和評價所公開的系統、方法和結構的各種新穎方面。
「第6圖」說明用於在積層製造過程中雷射光再循環的示例性設備600的配置。設備600可包括一個或多個光源,例如但不限於光源601、602和603。在一些實施例中,光源601、602和603可以包括雷射器。或者,可使用其他類型的光源,例如固態雷射器。在一些實施例中,光源601、602和603中每一個或至少一個可發射700nm的11.1kW之p偏振光,其具有7.9cm×7.9cm的尺寸和7.6毫弧度(milli-radians,mrad)的發散角度。由光源601、602和603發射的光束可由第一光學組件604多路復用在一起,第一光學組件604可包括一系列反射鏡,從而允許光束盡可能靠近在一起。然後,這些光束由光學裝置605重新成形和混合,產生光束606,33.3kW的功率,4.7cm×4.7cm的尺寸和70.4mrad的發散角。然後光束606可入射空間偏振閥607,空間偏振閥607可透過將所選像素的偏振從p偏振旋轉到s偏振在光束606上施加空間偏振圖案圖,以提供光束608。通過適當的修改,所選像素可透過從s偏振旋轉到p偏振來形成,以提供光束。在其他實施例中,灰度像素可通過部分旋轉來創建。在與偏振器609相互作用時,光束608的s偏振態可被反射為光束610。精確的分數可表示為由空間偏振閥607圖案化的光分數的函數。光束610可進入第二光學組件611,第二光學組件611可包括一系列反射鏡、重新成形透鏡、波片或其它光學元件,並且可以修改成尺寸為7.9cm×7.9cm的光束,然後再引入系統,就好像它是光源612,伴隨原始的一個或多個光源601、602和603。
用於光再循環的過程可包括多路復用多個光束,該些光束包括來自一個或多個光源601、602和603的至少一個或多個光束的步驟。多個光束可以被重新成形和混合以提供第一光束。設備600的空間偏振閥607應用空間偏振圖案在第一光束上,以提供第二光束。 設備600的偏振器609分離第二光束608的偏振狀態以反射第三光束(例如,光束610)。設備600的第二光學組件611將第三光束整形為第四光束,且第四光束被引入第一光學組件604作為多個光束之一,以產生第五光束(例如,光束613),第五光束被發射通過偏振器609並且不被偏振器609反射。
「第7圖」說明根據本公開的偏振組合的示例性光學組件700,以實現高達原始半導體雷射器的2倍強度(在限制內)。半導體雷射器在一種偏振態下通常被極化約70-90%。當使用偏振旋轉方法來對光進行圖案化時,未預期的偏振態之10-20%的光可能潛在地未被使用(退回)。為了避免這種損失,偏振組合和圖案化可用於提高傳輸效率或者將合成強度增加到因子2,或者兩者。
在一個實施例中,提供具有第一強度的兩個或更多個光束,兩個或更多個光束中的每一個光束被極化且具有多數偏振狀態和少數偏振狀態。在兩個或更多個光束中的每一個光束的多數偏振狀態施加相應的偏振圖案,並組合兩個或更多個光束以提供具有大於第一強度之第二強度的單個光束。在第二實施例中,可以使用多於一個的任意偏振狀態的雷射器。偏振器用於將光束分離成其(各自)相應的偏振狀態,並透過空間定位將相應偏振狀態的光束在空間上堆疊在一起,產生兩個具有每個偏振態之一的有效光束。具有不同偏振態的這兩個光束通過與它們的透視偏振狀態相關的光調製器,之後在光束中施加偏振狀態圖案,並隨後通過偏振組合而組合光束。該方法使用過程中的所有光,這允許雷射的更高使用,因此由於偏振狀態的變化而實現最小損失以及更好的系統效率。
光學組件700可包括「第7圖」所示的那些元件中的一些或全部,描述如下。光源701和光源702各自作為高功率光子源。在一些實施例中,光源701和光源702可為每個具有33.3kW功率的半導體雷射陣列,發射1000nm的光子,這些光子被成形並混合成20mm×20mm見方的方形光束。發射的光可被90%極化為多數狀態p偏振,從而產生光束703和光束704。發射的光束703和704可以分別入射偏振器705和706。偏振器705和706可以反射少數狀態s偏振以產生可入射束集堆711上的光束709和710。偏振器705和706可以透射p偏振以產生光束707和708,其可以分別入射偏振旋轉光學定址光閥712和713。光閥712和713中的每一個光閥可施加相同圖像到707和708以產生偏振圖案,且可以在期望圖案中將20%的“像素” 在空間上從p偏振變換為s偏振,從而產生光束715和714。光束714和715可以分別入射偏振器717和716。偏振器717和716可反射s偏振以分別產生光束719和718,光束718和719可包含20%的能量並且可被轉儲到束集堆720。偏振器716和717可以傳輸p偏振,而產生光束721和722。光束722可以入射半波片723,半波片723將每個光子的偏振旋轉半波,從而將p偏振變為s偏振以產生光束724。光束721和724可分別入射反射鏡725和726,以產生光束727和728。光束727可入射反射鏡729,以產生光束730,光束730可用p偏振方式入射到偏振器731上。s偏振中的光束728可入射偏振器731,偏振器731可反射光束728的s偏振並透射光束730的p偏振,以產生光束732。光束732可為具有來自光源701或702的兩倍單偏振狀態強度的光束,由於90%的初始偏振,原始光的總初始強度為1.8倍,且成比例地小於在光閥712和713處應用的偏振映射圖像的20%的總初始強度。在光束732的總傳播強度可以是發射47.52kW總發射功率的初始強度的1.44倍。成像到原始的20×20mm正方形,如果維持發散角度,最終強度可以是11.88kW / cm2
。
在粉床熔融積層製造中,當處理粉末材料時(具有或不具有化學鍵),具有足夠能量的光束的源圖像被引導到粉床(列印面)頂面上的位置以形成完整物體。用於粉床熔融積層製造的光學系統的分辨率(或像素尺寸)取決於列印面是否與光學系統中的最終光學元件的焦平面一致,或者就成像系統而言,取決於用於執行成像操作的光學器件之透鏡和圖像平面之間的距離對於給定的透鏡配置是否保持基本上恆定的距離。為了能夠在粉床熔融積層製造中列印大物體,需要精確控制列印面上的圖像位置以及透鏡之間的距離,以保持粉床頂面的每個可能位置上的分辨率或像素尺寸。不同的粉末材料可能因為鍵結能的閾值不同需要不同強度或能量的光束。如果在改變粉末類型或粉末尺寸分佈時需要強度的變化,則可能需要關閉光學系統以便重新安裝和重新對準成像透鏡。
為了解決與強度和分辨率變化相關的問題,過程描述如下。「第8圖」為說明包括圖像中繼支架的動態光學組件的使用步驟之流程圖800。在步驟810中,獲得的信息或以其它方式決定找到在粉床熔融積層製造系統中待列印物體的最小分辨率(入射光的像素大小)。根據強度和分辨率要求,計算包含圖像信息的入射光放大率和動態光學組件的圖像距離。放大率可將前體圖像平面處的圖像之第一尺寸轉移到列印面(粉床的頂面)的圖像之第二尺寸。入射光可來自於能量源並穿過可創建圖像信息的前體圖像平面。過程800可包括儲存物體的幾何數據以及動態光學組件的位置和旋轉控制數據。
在步驟820,過程800可包括配置機械組件和一個或多個透鏡組件以實現在步驟810中獲得的適合於粉末材料的放大率。 機械組件和該些透鏡組件之一的配置可包含機械組件的旋轉、第二組光學透鏡的交換或者第二組光學透鏡的移除。
在步驟830,可以執行多個旋轉,以在粉床熔融積層製造的每個連續步驟中將入射光從前體圖像平面引導到列印面的期望位置(例如,粉床的頂面)的列印面。 在步驟840,動態光學組件可以執行多個平移運動,以在粉床熔融積層製造的每個連續步驟中維持從前體圖像平面到列印面(例如,粉床的頂面)的每個位置之圖像距離為恆定。粉床或光學組件的垂直運動可用於保持粉床相對於最終透鏡的固定間隔。
實施過程800的設備可包括分佈在由構建平台支撐的粉床頂面上的粉末材料層。位於前體圖像平面處之入射光的源鏡像(source image)入射鏡筒的透鏡組件。透鏡組件可透過鏡筒的旋轉來配置,鏡筒的旋轉產生第二組光學透鏡的交換、移除第二組光學透鏡、使用改變形狀的動態透鏡、電子透鏡交換、光束重定向系統、電光控制折射光束操縱裝置或其組合,以具有用於粉末材料的合適的放大率。在穿過透鏡組件之後出現與源鏡像不同的尺寸的物體圖像,並且根據透鏡組件的放大率進行修改。包含圖像信息的光束入射前體鏡(precursor mirror),並被引導到安裝在補償支架上的反射鏡,在反射鏡處反射,然後入射到安裝在構建平台支架上的最終鏡(final mirror)。最終鏡將包含圖像信息的光束引導通過最終透鏡朝向粉床的頂面,且物體圖像可再現並可在其上形成的圖像平面中放大。粉床上的粉末材料可以熔化以形成物體圖像的形狀。然後構建平台支架移動到下一個位置,直到粉床頂面上的指定位置結合於該層。再次分配新的粉末材料層,並且構建平台可向下移動等於粉末材料層的厚度的距離,以保持與構建平台支架的恆定距離。在繼續積層列印過程中,新層開始循環。
「第9A圖」說明根據本公開的粉床熔融積層製造列印過程中的中間點的示例方案900。示例方案900呈現構建腔室中元件的向上移動,同時利用固定的構建平台930控制景深。構建平台930可具有0.5米乘以1米的面積,在列印週期期間可在其上分配粉末。在一個實施例中,構建平台930移動到台架桌905下方的位置並鎖定位置。每個高度為3米的垂直柱903(1)-903(4)支撐安裝在台架桌905上的支架907。粉末分配單元910、壓縮功能911和反射鏡917可安裝在支架907上,用於在水平面中的平移運動。台架桌905呈現於第8圖中的粉床920上方的位置處,以反映列印可能正在進行。在完成的各個階段的粉床920包含粉末層和列印物體。從粉末分配單元910分配的新粉末層925包括粉末分佈和壓實。從列印頭(未顯示)入射的光束921可被反射鏡917反射成為照射在新粉末層925的位置923上的光束922。於新的粉末層925中,列印可通過熔化、燒結、熔融或以其他方式接合粉末。反射鏡917與新粉末層925中的位置923之間的距離為景深,景深是需要嚴格控制以滿足分辨率要求。箭頭970表示台架桌905的向上移動,台架桌905支撐支架907、粉末分配單元910、反射鏡917以及在某些實施例中的周圍腔室或側壁。在該過程期間,構建平台930保持鎖定到位,且支架907(和/或腔室和腔室壁)相對構建平台930移動。這種配置對於下面討論的實施例特別有用,其中構建平台930大且需要支撐不容易在垂直方向上以所需精確移動的大量重材料。
在一些實施例中,示例方案900的構建平台930可具有大於0.25平方米的面積。 或者,示例方案900的構建平台930可具有大於0.5平方米的面積。 或者,示例方案900的構建平台930可具有大於1平方米的面積。 或者,示例方案900的構建平台930可具有大於5平方米的面積。或者,示例方案900的構建平台930可具有大於10平方米的面積。或者,示例方案900的構建平台930可具有大於50平方米的面積。
在一些實施例中,包括示例方案900的列印物體之粉床920可具有大於10公斤的質量。或者,包括示例方案900的列印物體之粉床920可具有大於50公斤的質量。或者,包括示例方案900的列印物體之粉床920可具有大於100公斤的質量。或者,包括示例方案900的列印物體之粉床920可具有大於500公斤的質量。或者,包括示例方案900的列印物體之粉床920可具有大於1,000公斤的質量。或者,包括示例方案900的列印物體之粉床920可具有大於2,000公斤的質量。或者,包括示例方案900的列印物體之粉床920可具有大於5,000公斤的質量。或者,包括示例方案900的列印物體之粉床920可具有大於10,000公斤的質量。
在一些實施例中,示例方案900的構建平台930可具有大於0.25平方米的面積,並且包括示例方案900的列印物體之粉床920可具有大於10公斤的質量。
粉床熔融技術處理粉末材料以由金屬、陶瓷和塑膠粉末形成完整物體。需要足夠的能量以使粉末達到相應的熔融/燒結/合金化溫度或相變溫度。 如果粉末材料開始更接近其相變溫度,則可能需要較少的能量來完成相變。粉床熔融積層製造可受益於粉床的預熱,以減少由雷射器或其它能量源遞送的能量的數量。這可允許使用較低強度的雷射器和較少的停留時間來結合粉末,從而提高生產率。
對於諸如金屬的一些粉末材料,可能需要後處理(post processing)之熱處理(heat treatments)以減輕應力集中並增加機械強度。後處理之熱處理可包括受控溫度退火或快速冷卻,以改善期望的機械或電性能。可透過將加熱/冷卻元件/溫度傳感器嵌入構建腔室的壁內/構建平台內部以及透過反饋運算控制加熱/冷卻的速率達到粉末的預加熱和後處理之熱處理。可透過在構建腔室的壁內使用絕緣材料來減少熱損失。
關於「第9B圖」討論了與該粉床和腔室結合使用的合適熱管理系統。「第9B圖」說明根據本公開的實施例之基於雷射的粉床熔融積層製造系統900B之示例性設備。系統900B包括作為列印頭910B的一部分之能量源950和能量束操縱系統/驅動器955。光機組件930(1)-930(N)可通過系統900B為列印頭910B分配能量束。使用各種傳感器的數據輸入、監視、控制和反饋控制由處理器901和儲存器940啟用。這些系統可包括3D物體數據941的輸入、列印頭控制942、構建平台控制943、光機組件控制944以及構建腔室控制945。
基於雷射的粉床熔融積層製造系統900B可包括一個或多個構建腔室。為了說明性目的而非限制,系統900B的一個或多個構建腔室如第9B圖所示為構建腔室920B(N),其中N為大於或等於1的正整數。構建腔室920B(1)-920B(N)可包括用於分配粉末狀材料的粉末分配單元922(1)-922(N)和構建平台924(1)-924(N),以支撐由粉末材料形成的粉床。每個構建腔室920B(1)-920B(N)可具有不同的尺寸並可以在粉床熔融積層製造系統900B內彼此交換。構建腔室920B(1)-920B(N)可具有可移除的門,以促進在構建之後從構建腔室920B(1)-920B(N)的一側移除粉末。在粉床熔融積層製造期間,構建腔室920B(1)-920B(N)可以密封在氣氛(atmosphere)中。氣氛可包括但不限於真空、空氣、氮氣、氬氣或氦氣。
在一些實施例中,構建腔室920B(1)-920B(N)的壁/天花板可嵌入加熱/冷卻元件926(1)-926(N)和溫度傳感器928(1)-928(N),以控制構建腔室920B(1)-920B(N)內的熱環境。
在一些實施例中,加熱/冷卻元件926(1)-926(N)可為能夠進行熱交換的流體通道。流體可以在構建腔室920B(1)-920B(N)外部被加熱或冷卻,並且透過通過流體通道的移動流體與壁/天花板進行熱交換。流體可包括但不限於油、水、蒸汽、空氣、氮氣、氬氣或冷卻劑。
在一些實施例中,加熱/冷卻元件926(1)-926(N)可分別為電阻加熱元件和熱離子冷卻元件。
在一些實施例中,溫度傳感器928(1)-928(N)可為嵌入在內部構建腔室920(1)-920(N)的壁/天花板內的熱電偶。
在一些實施例中,溫度傳感器928(1)-928(N)可為安裝在構建腔室920(1)-920(N)內的壁/天花板上的紅外攝像機。
在一些實施例中,構建腔室920(1)-920(N)中的每一個可包括在構建腔室920(1)-920(N)的壁/天花板上的輻射屏蔽,以減少熱損失。
在一些實施例中,構建腔室920(1)-920(N)可包括作為壁/天花板的部分之低導熱性材料。
在一些實施例中,構建平台924(1)-924(N)中的每一個可以能夠在粉床熔融積層製造期間垂直運動或固定在給定高度。構建平台924(1)-924(N)可具有不同的尺寸並支撐可變質量的粉床。構建平台924(1)-924(N)可在軌道、輪子或其他裝置上從構建腔室920(1)-920(N)移除。
「第10圖」描述在構建操作期間最小化粉末體積要求的方法。過程1000可以用於根據本公開的粉床熔融積層製造系統中實現粉床熔融的可變列印腔室壁的列印。在步驟1010中,過程1000可包含分配粉末材料以在構建平台的支撐表面上形成粉床的第一層。
在步驟1020中,過程1000可包含選擇性地熔融粉床的第一層的一部分,以形成粉床的第一層的熔融部分之外的一個或多個第一壁。一個或多個第一壁可包含構建平台上的粉床的第一層的另一部分。在一些實施例中,一個或多個第一壁可包括圍繞構建平台的內部區域的多個壁,以產生沒有粉末材料的區域。在步驟1030中,過程1000可包括分配粉末材料,以在粉床的第一層上形成粉床的第二層。在步驟1040中,過程1000可包含選擇性地熔融粉床的第二層的一部分,以形成粉床的第二層的熔融部分之外的一個或多個第二壁。一個或多個第二壁可包含粉床的第二層的另一部分。
在一些實施例中,一個或多個第一壁可包括在構建平台的第一區域上圍繞粉床的第一層的另一部分的多個第一壁。此外,一個或多個第二壁可包括在粉床的第一層的第二區域上圍繞粉床的第二層的另一部分之多個第二壁,其中第二區域小於第一區域。
在一些實施例中,一個或多個第一壁可包括沿著構建平台的多個周界的至少一個周邊之至少一個壁。另外,構建平台的多個周界的剩餘的一個或多個周邊可以鄰接一個或多個結構壁。 在一些實施例中,過程1000可以進一步包含在垂直於構建平台的支撐表面的方向上引起構建平台和一個或多個結構壁之間的相對運動。此外,過程1000可包括將粉末材料分配在粉床的第一層和一個或多個第一壁上,以形成粉床的第二層。此外,過程1000可以包含選擇性地熔融粉床的第二層的一部分以增加一個或多個第一壁的高度。
在另一個實施例中,臨時牆可被製造成具有能夠支撐流體流動的管、空腔或多孔部分(以下稱為“流體通路”)。流體通道可以是打開的或部分關閉的,並且可形成為與外部管、軟管、噴霧器或其它流體連通系統的介面。空氣、氮氣、水、高溫或矽油或其它合適的氣體或液體可循環或以其它方式通過流體通道傳輸,以改善熱管理。熱管理可包括快速或受控制的冷卻,且流體可針對例如多孔外壁部分循環(例如:通過形成在臨時牆中的管道)或者噴霧、滴落或噴灑。
所提出的方案可在用以列印金屬、塑膠或陶瓷零件的粉床熔融積層製造系統中實施。所提出的方案的應用可以更具體地限定為在雷射或電子束的接收端上的機器之列印床部分中使用。在本公開的各種實施例中,粉床熔融積層製造系統的列印頭的一個或多個能量源可被控制以列印構建腔室的壁。這允許腔室邊緣壁的消除,且可允許產生子集區域。子集區域/體積/空隙的存在可幫助最小化粉末的使用,並且能夠產生沒有體積的粉末。這在使用諸如金、銀和銅的昂貴材料工作時特別有用,並且對於使用非常大的物體之工作也是有用的,其中過量的粉末可包括大部分的標準列印體積。在所提出的方案中,粉末可選擇性地分佈在積層製造過程期間產生的預定壁區域之構建區域。
由於列印床和列印頭通常對於連續層是垂直分離的,因此需要列印腔室壁以支撐由粉末和列印物體組成的先前沉積層。一個示例可包含升高到緊密配合的壁。另一個例子可包含在每層期間列印周邊壁(以及可能的結構支撐)。該壁可在每次列印之後被切割和再循環。
在一些實施例中,可以升高大部分或全部周邊壁,並且還可以列印壁以減小粉末層的粉床面積,同時使用由周邊壁形成的“桶”(tub),以收集落入列印壁外部的粉末。
在一些實施例中,升高的壁可不打算作為完整的周邊。例如,當列印床先放入列印台以及隨後當完成的床(粉末和列印物體)被提起時,可能需要用於堆高機或其他材料處理設備的存取點。為該區域的有限壁(limited wall)之列印提供在列印週期期間支撐粉末所需的剩餘壁。然後材料處理設備可能可以“衝床”(punch)穿過該列印壁以獲得升力點(lift point)。在一些實施例中,升力點可通過運算或用戶配置事先確定構建並且被建立在關鍵位置的壁中。
列印壁不需要與列印台的幾何形狀相匹配,也不與在先前層列印的壁完全匹配。利用適當的粉末分配設備和邏輯,這允許粉末被恰好分散以覆蓋需要粉末的壁區域之間。有利地,這可節省每層大量的時間、重量和/或粉末。
「第11A圖」說明可使用根據本公開的在構建平台1130上形成粉床1120的示例性方案1100。構建平台1130可具有0.25平方米的面積,並且可支撐粉末材料的粉床1120,粉床1120可在構建腔室1110內部0.5m深的位置。方案1100可位於構建腔室1110的末端或列印週期的中間。在構建平台1130下方是具有傾斜壁的料斗1140,傾斜壁相對於其上設置構建平台1130的水平面可為45-60度。在一些實施例中,料斗1140可包含螺旋鑽1150。
「第11B圖」說明另一示例方案1101,其中描繪了粉床1121與構建平台1131的分離。方案1101可以處於列印週期的結束或者在由於各種原因而中止的中間週期。在構建腔室1111內,支撐粉床1121的構建平台1131可從水平位置傾斜超過90度。由於粉床1121的重量而產生的重力拉力使粉末材料和嵌入粉床1121的列印物體落入下面的料斗1141中。構建腔室1111可包括真空1160和高壓噴流1162,使得大部分粉末可被收集在料斗1141中。真空1160和氣體噴流1162可用於去除傾斜構建平台1131之後留在構建平台上的粘性粉末。料斗1141可具有傾斜壁,以幫助將粉末引導到料斗1141的底部上。料斗1141可包括螺旋鑽1151。
處理可包含控制粉末分配組件以在列印循環期間分配多層粉末材料以形成粉床。粉末分配組件的垂直運動可被控制以保持與粉床的恆定分離。表明粉末分配組件的垂直運動結果可以在一部分分配的粉末層結合在一起之後遠離粉床(例如,向上)一段等於分配的粉末層的厚度的距離。為了去除剩餘粉末,構建平台的移動可包括旋轉、傾斜、反轉、振動、搖動和/或抖動。基於這些運動以及粉床的重量,在構建平台上的粉床可能落入構建平台下面的料斗中。真空系統、機械手臂和/或氣體噴霧器可用於進一步去除構建平台上的剩餘粉末。因此,大部分粉末材料可以收集在料斗中以便重複使用或儲存。在一些實施例中,螺旋鑽和/或輸送機可用於將在料斗中收集的粉末輸送朝向一個或多個儲存腔室。在另一處理實施例中,大部分粉末材料可在一個或多個儲存腔室中密封,儲存腔室具有適於粉末材料的氣氛。氣氛可包括真空、空氣、氮氣、氬氣、氦氣、其它惰性氣體或稀有氣體。
「第12A圖」和「第12B圖」說明用於長零件製造的系統。當構建腔室必須清空粉末和列印零件並且為下一個列印作業重置時,許多當前的3D列印機具有顯著的和反覆的停機時間。在下面的描述中,定義了統一坐標系1211。因此,某些系統可對應於或限定彼此正交的縱向、側向和橫向方向1211a、1211b、1211c。 縱向方向1211a可對應於系統的長軸。 因此,在積層製造期間,長零件1210的長軸基本上可與縱向方向1211a對齊。側向方向1211b可與縱向方向1211a組合以限定水平平面。也就是說,縱向和側向方向都可以在水平面內延伸。橫向方向1211c上下延伸與重力對齊。
在選擇的實施例中,根據本發明的系統和方法可實現或支持基本上連續的積層製造,不具有這樣的停機時間。如參考「第12A圖」和「第12B圖」可看出通過以分段製造零件1210來實現。例如,系統可以(1)製造零件1210的第一段1212a,(2)沿輸送機1218向下推進零件1210所選距離,(3)製造零件1210的第二段1212b,(4)沿著輸送機1218向下推進零件1210所選擇的距離,以及(5)重複,直到零件1210的所有段已經完成。以這種方式,可在輸送機上的不同位置或區域並行(即同時)進行積層製造和清潔(例如,未使用或未混合的粒狀材料的分離和/或回收)。因此,根據本發明的積層製造不需要停止以去除粒狀材料和/或零件。
系統可定義或包括多個區域1236a-1236c。不同的區域可執行不同的任務。在所選擇的實施例中,不同的區域可對應於沿著輸送機的不同位置。因此,輸送機可以使零件前進(例如,沿由箭頭1232指示的方向平移)通過系統的各個區域。在某些實施例中,系統可包括三個區域1236a、1236b、1236c。第一區域1236a可對應於包括或跨越輸送機之發生積層製造的部分。因此,第一區域1236a可對應於輸送機上的各層粒狀材料144被鋪設以及粒狀材料保持與零件緊密接觸的區域。
第二區域1236b可直接跟隨第一區域1236a。第二區域1236b的特徵可在於粒狀材料的未混合部分的顯著部分(significant portion)移動遠離零件。例如,在第二區域1236b中,一個或多個壁可終止或被移除,使得粒狀材料的未混合部分可不再完全容納在側向方向1211b上。因此,粒狀材料的一些未混合部分可能從一個或多個平板、輸送機或其類似物的側面溢出。溢出的粒狀材料可落入一個或多個容器中,在那裡它可被收集和再使用。
第三區域1236c可直接跟隨第二區域1236b。 第三區域1236c的特徵在於第三區域1236c內的零件1210之一部分被暴露以觀察(例如,通過移除或移動粒狀材料的未混合部分的顯著部分而基本上完全或部分暴露以觀察),而零件1210不用在側向方向1211b和橫向方向1211c上改變其位置。
例如,在某些實施例中,零件1210的前部可到達第三區域1236c,而零件1210的尾部仍然在第一區域1236a內製造。因此,在選擇的實施例中,輸送機、一個或多個平板、一個或多個臨時支撐件1223、一個或多個壁或其類似物或其組合或子組合可合作以將零件1210的前部保持在側向方向1211a和橫向方向1211c上的相同位置,作為在第一區域1236a和第二區域1236b內佔據的前部。因此,零件1210的前部位置不會過度破壞、扭曲或類似發生在第一區域1236a的零件1210尾部的積層製造。
在選擇的實施例中,在零件1210外部的所有未混合粒狀材料可在第二區域1236b中被移除或在第二區域1236b和第三區域1236c的一些組合內被移除。然而,在某些替代實施例中,可從具有完好的四個壁的輸送機上移除粉床。因此,未混合粒狀材料的剩餘部分或全部可在與第一區域1236a隔開一定距離的作業站被移除。
在另一個實施例中,斜坡可用於從下部區段或區域移轉到隨後的更高區段或區域。例如,斜坡可使得對應於下部的後壁能夠通過積層製造的過程被構建高於大部分的下部,使得後壁可變成用於隨後更高段的前壁。當僅僅形成後壁時,構建斜坡可比鋪設完整層(例如,覆蓋整個下部層)更快。
斜坡可包括多個粒狀材料層,其在一個或多個方向(例如,縱向方向1211a)上的長度被遞增地改變。例如,在斜坡內,每個連續層的長度可比緊接在前的層短。斜坡相對於水平面的作用角(resulting angle)可小於粒狀材料的臨界休止角(angle of repose)。因此,形成斜面的粒狀材料可為穩定且不會因作用在其上的重力加速而脫落或移動。
在操作中,粒狀材料的第一層顆粒可以分佈,並且輻射能量指向形成所選顆粒的一部分的第一層內的所有顆粒。粒狀材料的第二層顆粒分佈在第一層的頂部,並且輻射能量指向形成所選顆粒的一部分的第二層內的所有顆粒。第一層可限定第一平面,第二層限定平行於第一平面的第二平面。在某些實施例中,第一平面和第二平面皆為水平平面。在其它實施例中,第一平面和第二平面皆相對於水平面以大於零度且小於或等於粒狀材料的臨界休止角的角度延伸,形成斜坡。
「第13A圖」說明積層製造系統1300,其包括具有粉床1304的粉末腔室1302。系統1300還可以包括處理平台1320,其可為指定的處理區域、另一個粉末腔室、塗覆站、 輸送機、運輸容器或任何其他需要的製造系統零件。系統1300還包括具有操縱器1312之機器手臂1310,操縱器1312能夠透過其積層製造的操縱點1332抓握零件1330。傳感器系統1314可安裝在機器手臂1310上,或者替代地,安裝在粉末腔室1302上面、內部或附近。
雖然具有夾持抓緊器的六個自由度單個機器手臂為圖中所示的操縱裝置,但是可採用其他自動化、機械或手動實施例。例如,可使用起重機、升降機、液壓臂、夾具、滑軌(tracks)或軌道(rails)、釘扎機制或任何其它類型的手動或自動之可控操縱裝置。操縱裝置可安裝在粉末腔室1302的旁邊、上面、附近或內部。或者,操縱裝置可移動地安裝在軌道上,靠近或定位在粉末腔室內。在一些實施例中,可使用多個操縱裝置。
操縱裝置可包括位置、深度、雷射掃描或類似的傳感器系統1314。傳感器可安裝在操縱器附近、機器手臂上的其他地方、粉末腔室的內部或附近或者處理平台1320上。在某些實施例中,傳感器可以是可移動的,具有鉸鏈、軌道、液壓活塞或者用於旋轉、抬高、壓下、振盪或側向掃描傳感器的其它合適的致動機構。在某些實施例中,常規RGB、CMOS或CCD傳感器可單獨或與專用深度傳感器或光學邊緣跟踪感測系統組合使用。可選擇實施例以改進零件的3D定位,包括識別和使用指南、標記或其他可檢測的定位標記。
「第13B圖」說明關於「第13A圖」所描述的系統,具有機械手臂1310透過其積層製造的操縱點1332之一升高和重新定向零件1330。在一些實施例中,零件1330可被抬高、旋轉、線性平移,並回到粉床1304上以進一步處理。
「第13C圖」說明關於第13A圖描述的系統,具有機械手臂1310透過其積層製造的操縱點1332之一升高和重新定向零件1330。在該實施例中,零件1330被抬高、旋轉並設置到處理平台1320上以進一步處理。
「第14圖」說明包括各種可能的積層製造的機器操縱點的零件1400。零件1400支撐能夠用作機器操縱點的各種突出結構(即1402、1404、1406、1408和1414)以及內部結構或凹口(即1410、1412和1416)。在圖中,結構1402為月牙凸片,其具有到零件1400的兩個窄連接點。凸片部分允許容易地接合具有夾住或夾持抓緊器的操縱器,而窄連接點透過機械夾持、鋸切、沖孔或鑽孔;或透過定向能量束簡化結構1402的移除。類似地,接腳(pin)1404為小突出結構,其能夠透過夾住或夾持抓緊器,或者透過圍繞和約束的“鑽頭”(bit)保持型接合系統,以保持接腳1404。矩形突起1406附接在單個窄點處,允許一些實施例的操縱器在零件已經被移動到期望的區域/位置之後扭轉和斷開突起。再次附接在兩點的平板1408以簡化透過機械夾持或能量束的後續移除,相對長且寬,以簡化操縱器的接合。
零件1400的積層製造可被設計為包括凹陷、平台、凹口、孔或其他內部限定的結構,其不會非常影響零件的功能,但提高了與機器手臂接合的可靠性。例如,稜柱鎖定凹口(prismatic locking cavity)1410可引導接腳或夾具系統與凹口接合。或者,伸展夾具可用於接合限定在零件1400中的凹槽1412。如果需要,凹口或開口1416也可限定在可移除的突出翼片1414中。在一些實施例中,基本上積層製造的零件的凹口或開口可透過減法加工、鑽孔、沖壓或者透過蝕刻或定向能量束移除材料來限定。在某些其它實施例中,在使用後,凹口可使用積層製造技術,透過使用熱固性塑膠或任何其它合適的填充技術來填充凹口。
在一些實施例中,可透過使用成像或其他光學傳感器來改進零件1400的二維或三維定位,其使用突出翼片或凹口位置來識別零件的精確位置。在其他實施例中,標記光導或標記1420可積層形成或者機械或雷射刻在突出結構或零件本身上,以改進在移動之後接合3D定位的引導。
在一個實施例中,可透過以下步驟進行處理。在第一步驟中,將材料置於粉末腔室的粉床上。然後,使用二維圖案化能量的定向光束,製造包括一個或多個操縱點的零件。操縱器可接合操縱點,並抬高該零件遠離粉床。 該零件可在粉床上重新定位以進一步處理,或者可選地移動到遠離粉床和腔室的新處理區域。在選擇的步驟中,可移除操縱點(例如,突出翼片被機械夾持)或填充(例如,積層限定的孔或填充有環氧樹脂的凹口)。
「第15圖」說明在列印過程期間收集和表徵粉末材料的粉末樣品的示例過程1500。過程1500可用於從粉床或粉末分配組件收集粉末樣品,並根據本公開在測試套件中實時表徵粉末樣品。在步驟1510中,過程1500可包含控制擷取者(ingester)在列印循環期間收集形成列印物體的粉末材料之多個粉末樣品。粉末材料可包括金屬、陶瓷、塑膠粉末或在受熱時能夠鍵結在一起的其它合適粉末。擷取者可在列印過程期間以預定或隨機間隔或者在預定階段週期性地收集粉末樣品。例如,可以每10分鐘間隔或僅在列印過程的1/5和4/5完成時收集粉末樣品。擷取者可具有機構,以從粉床或粉末分配組件轉移進入的粉末。取決於需要分析多少試驗,擷取者還可控制轉移的粉末的量。在步驟1520中,過程1500可包含控制測試套件以執行一個或多個試驗的測試。在一些實施例中,粉末材料的一個或多個特定性質可能需要嚴格控制在一定範圍內,以保證列印物體的機械、電氣或光學性質。在其它實施例中,在列印過程期間粉末的特性可能需要保留以用於審計目的。測試套件可包括具有執行一個或多個試驗的能力的儀器。為了說明而非限制,一個試驗可透過粒徑分析儀測量粉末尺寸的分佈﹔第二個試驗可透過比重計測量粉末樣品的密度﹔第三個試驗可透過氣相色譜-質譜法來識別粉末樣品內的物質。在步驟1530中,過程1500可包括根據來自試驗的結果表徵來判定是否修改用於列印處理的一組列印參數或者是否中止列印處理。該判定可包括基於使用表徵的結果作為輸入的一組模型的電腦模擬。粉末樣品可能已經經歷了不需要認證或不適當的加工條件的粉末之不需要的變化。測試可在列印過程期間提供對粉末性質的實時反饋。可根據測試的結果修改一個或多個列印參數。例如,當氣體比重計測量指定粉末密度的偏差時,可增加或減少入射光束強度,這可能影響熔化或燒結粉末所需的每單位體積的能量。還可控制由列印頭提供的入射光束之停留時間或由粉末分配組件分配的粉末層厚度,以調整能量需求變化。如果每單位體積的能量與指定粉末密度的偏差太大,則列印過程可停止或中止,因為列印頭內的能量源可能不滿足熔化粉末的要求。在另一個實例中,粉末樣品中的污染物可透過氣相色譜-質譜法檢測,其可影響列印物體的一個或多個電氣、機械和光學性質。在其它實施例中,如果表徵結果指示使用未經許可的粉末或危險粉末(包括可能導致較差的積層製造結果之未經許可的粉末),則可停止列印過程。
在一些實施例中,可透過使用一組模型的模擬來執行基於粉末樣品的過程中(實時或原位)表徵的結果之最終列印品質的預測。例如,列印物體的尺寸控制可依賴於入射光束的分辨率和跨越熔化區域的邊界之粉末溫度梯度。如果溫度沒有足夠快地下降跨越邊界且產生超過尺寸要求的公差,則熔化區域可膨脹超過預期的邊界。溫度梯度可透過傳熱模型來模擬,傳熱模型基於粉末性質,例如:粉末的組成和尺寸,計算熱傳導率。如果透過模擬模型的列印物體之預測尺寸超過尺寸要求的公差,則可中止列印過程。
在步驟1540中,過程1500可包含將粉末樣品儲存在多個樣品罐中。 樣品罐可被儲存用於分析,其可能不適合於過程中表徵或之後的審計目的。 儲存容器可以能夠在基本上等於樣品罐內的過程(實時或原位)氣氛之氣氛中包裝粉末樣品。氣氛可為真空、空氣或惰性氣體,例如:氮氣、二氧化碳、氬氣、氦氣或其它稀有氣體。
參考「第16圖」,根據本發明的製造設備1624可包括容納在封閉空間(enclosure)1626內的一個或多個機器1610。這樣的封閉空間1626可根據需要或必要來控制一個或多個環境條件。例如,封閉空間1626可保護列印或待列印材料免受不需要的熱、化學、光子、輻射、電子反應或相互作用,或其類似物或其組合或子組合。封閉空間1626還可保護人類操作者或其他附近人員免受於機器和機器粉末1610的潛在有害方面,例如:熱、UV光、化學反應、放射性衰變產物和雷射曝光。
包含在封閉空間1626內的一個或多個機器1610可以是相同尺寸或不同尺寸。同樣地,包含在特定封閉空間1626內的一個或多個機器1610可以是相同類型或不同類型。例如,在所選擇的實施例中,封閉空間1626內的一個或多個機器1610的每一個可在批量過程(batch process)中混合(例如:聯合、鍵結、熔融、燒結、熔化等)特定的粒狀材料。在其它實施例中,封閉空間1626內的一個或多個機器1610的每一個可在連續過程中混合特定的粒狀材料。在另外的其它實施例中,封閉空間1626內的一個或多個機器1610可在批量過程中混合特定的粒狀材料,而封閉空間1626內的一個或多個其他機器1610可在連續過程中混合特定的粒狀材料。
在某些實施例中,製造設備1624可包括一個或多個氣室1628,其形成用於相應封閉空間1626的一個或多個前室(antechamber)。氣室1628可使零件、材料144、人員或諸如此類能夠進出封閉空間1626而不危及封閉空間1626內的環境(例如:低氧和惰性氣體環境)。氣室1628可包括至少兩個密閉(或基本密閉)的門1630a、1630b。氣室1628的第一門1630a可使得零件、材料144、人員或諸如此類能夠通過氣室1628的內部和相應的封閉空間1626的內部之間。第二門1630b可以使得零件、材料144、人員或諸如此類,能夠通過氣室1628的內部和圍繞相應的封閉空間1626的外部環境之間。氣室1628還可包括氣體交換系統(未示出),其可根據需要或必要清除和/或排出氣室1628,在與氣室1628內部相容的狀態以及與封閉空間1626外部的環境相容的狀態之間有效地轉變氣室1628內的氣體環境。
可配置一個或多個機器1610於封閉空間1626中,從而為一個或多個人類工作者、機器人或諸如此類保留圍繞機器1610的足夠空間使用機器1610、從其中移除零件、真空抽吸未混合的粒狀材料144 以便重複使用或諸如此類。或者,或除此之外,封閉空間1626可包括使得一個或多個人類工作者、機器人或諸如此類能夠從上方使用機器1610(例如:目檢、實體取用)的各種支架、檢修通道或諸如此類。當封閉空間1626包含一個或多個大型機器1610時,這可能是有幫助的,其中從其邊緣或側面的使用可能不足以用於某些任務。
在某些實施例中,製造設備1624可包括一個或多個氣體管理系統1632,其控制封閉空間1626內的氣態物質的組成。氣體管理系統1632可保持惰性或基本惰性氣體(例如:真空、氮氣 、氬氣、二氧化碳或其類似物或其組合或子組合)高於期望水平(例如,按體積計大約99.9%或以上的氬氣)。或者,或除此之外,氣體管理系統可維持氧氣和/或水蒸氣的濃度低於大氣水平。例如,在一個實施例中,對於氣態氧所需的水平可低於0.05體積百分比,對於水蒸氣所需的水平低於0.05體積百分比。
封閉空間1626內的氣體環境可能與需要進入和/或在封閉空間1626內工作之一個或多個人的呼吸需求不兼容。因此,為了根據本發明在某些封閉空間1626內工作,一個或多個工人可穿個人防護裝備(personal protective equipment,PPE)。此後,當工人進入封閉空間1626時,PPE可於封閉空間1626內在工人和工作環境之間形成屏障。
在選擇的實施例中,由一個或多個工人穿戴的PPE可包括自給式呼吸裝置(self-contained breathing apparatus,SCBA)。SCBA可為過濾、補充和再循環或儲存呼出氣體(例如,循環呼吸器)的閉合電路裝置。或者,SCBA可以是將至少一些呼出氣體(例如:氮氣、二氧化碳、氧氣、水蒸氣或其組合或子組合)排放到周圍環境的開路裝置。在使用開路裝置的實施例中,封閉空間1626內的一個或多個工人呼出氣體的量相對於封閉空間1626的過大尺寸可能相當小。因此,釋放氧氣、水蒸氣或諸如此類至封閉空間1626的內部可為足夠小,以便可忽略或至少在可接受的限度內(例如,在氣體管理系統1632的整流能力範圍內)。
參考第17圖,在選擇的實施例中,製造設備可包括透過一個或多個介面機構1728連接以形成網絡1740的多個工作區域1724。形成這樣的網絡1740的一個或多個工作區域1724可包含在封閉空間1726內。形成這樣的網絡1740的工作區域1724可不需要封閉空間1726,因此可不包含在封閉空間1726內。 形成這樣的網絡1740的一個或多個工作區域1724可包含在一個或多個建築物內。例如,在選擇的實施例中,形成網絡1740的所有各種工作區域1724可包含在單個建築物內。在這樣的實施例中,包含在封閉空間1726內的任何工作區域1724可為工作區域1724,其所需要的環境調節比建築物提供的環境調節更多。
網絡1740的各種工作區域1724可被限定和/或配置以對應於某些製造相關處理。這樣的過程可包括透過積層製造創建零件;從創建它們的機器中移除零件;去除未混合的粒狀材料;從基部或床分離零件,一個或多個支撐結構(例如,延伸穿過零件的一個或多個移動壁的外部部分,以在積層製造期間列印支撐零件的一個或多個臨時結構,其不包括在成品零件等)或諸如此類;熱處理;錘擊;粉末塗佈、塗刷、陽極氧化或諸如此類;包裝裝運;或其類似物或其組合或子組合。
例如,在選擇的實施例中,網絡1740可包括用於由封閉空間1726提供的惰性環境中進行粉床熔融的第一工作區1724a,用於從封閉空間1726中的構建平台146移除粒狀材料144的第二工作區1724b,用於珠擊處理(shot peening)以改善封閉空間1726中表面粗糙度的第三工作區域1724c,用於熱處理以對封閉空間1726中的金屬零件進行退火的第四工作區域1724d,用於從封閉空間1726中的構建平台146移除零件的第五工作區域1724e,用於包裝和運輸的第六工作區域1724f或諸如此類或其組合或子組合。
在第一工作區域1724a中,一個或多個機器可包含在封閉空間1726內。這些機器可以是相同尺寸或不同尺寸。同樣地,一個或多個機器可以是相同類型或不同類型。例如,在選擇的實施例中,封閉空間1726內的一個或多個機器的每一個可在批量過程中混合(例如:聯合、鍵結、熔融、燒結、熔化或諸如此類)特定的粒狀材料。在其它實施例中,封閉空間內的一個或多個機器的每一個可以在連續過程中混合特定的粒狀材料。在另外的其它實施例中,封閉空間內的一個或多個機器可在批量過程中混合特定的粒狀材料,而封閉空間內的一個或多個其他機器可在連續過程中混合特定的粒狀材料。
可配置第一工作區域1724a的一個或多個機器,從而為一個或多個人類工作者、機器人或諸如此類保留圍繞機器的足夠空間使用機器、從其中移除零件、真空抽吸未混合的粒狀材料以便重複使用或諸如此類。或者,或除此之外,第一工作區域1724a可包括使得一個或多個人類工作者、機器人或諸如此類能夠從上方使用機器1610(例如:目檢、實體取用)的各種台架、檢修通道或諸如此類。當第一工作區域1724a包含一個或多個大型機器時,這可能是有幫助的,其中從其邊緣或側面的使用可能不足以用於某些任務。
在第二工作區1724b中,可透過各種方法從構建平台去除未混合的粒狀材料。例如,具有手動或機器控制(例如,移動)的收集端口之真空機構可用於從構建平台或粉床或諸如此類的零件周圍收集未混合的粒狀材料。或者,或除此之外,可使用手動或機器控制(例如,瞄準)的一個或多個加壓氣體流將未混合的粒狀材料從某些縫隙中去除,將未混合的粒狀材料從構建平台或粉床上掃除,和/或將未混合的粒狀材料移動到其可透過真空進入的一個或多個位置。
在選擇的實施例中,第一工作區域1724a和第二工作區域1724b可如圖所示包含在分開的封閉空間1726內。在其他實施例中,第一工作區域1724a和第二工作區域1724b可包含在相同的封閉空間1726內。此外,在某些實施例中,第一工作區域1724a和第二工作區域1724b可在地理上至少在某種程度上重疊,但在時間上分開(例如,對應於一個工作區域1724a的一個或多個任務可在與對應於其他工作區域1724b的一個或多個任務在不同的時間執行)。
或者,第一工作區域1724a和第二工作區域1724b可在地理上彼此相鄰,但是可以在某種程度上暫時重疊(例如,與一個工作區域1724a相對應的一個或多個任務可與相對應於另一工作區域1724b的一個或多個任務同時執行)。在這樣的實施例中,機器的第一區域可對應於或者為第一工作區域1724a,且第二區域(或者第二區域和第三區域的組合)可對應於或者為第二工作區域1724b。
在第三工作區域1724c中,可以手動或機器地將珠擊處理(peening process)應用於一個或多個零件。例如,在選擇的實施例中,手動或機器系統可以在珠擊處理中使用相同的粒狀材料(即,用於創建零件的相同粒狀材料)作為噴射介質,以改善零件的表面粗糙度。在第四工作區域1724d中,封閉空間1726可為或包括用於熱處理一個或多個零件的烘箱。因此,這種封閉空間1726可被配置為產生、保持和控制大量的熱量。準確的熱量可在封閉空間1726的尺寸和被熱處理的零件的性質或諸如此類之間變化。
在第五工作區域1724e中,一個或多個構建平台或床可與它們支撐的零件分離,一個或多個延伸穿過零件的移動壁之一個或多個外部部分可被移除,在積層製造期間被列印以支撐零件之一個或多個臨時結構,其不包括在成品零件內,可被去除或諸如此類或其組合。在選擇的實施例中,這可包含線切割放電加工(electrical discharge machining,EDM)處理。在這樣的實施例中,零件可以浸沒在部分去離子水浴(a bath of partially de-ionized water)中,其中小心地控制離子含量作為EDM處理的一部分。可根據需要或必要包括或省略用於第五工作區域1724e的封閉空間。
在第六工作區域1724f中,可準備一個或多個零件用於運輸和/或被運輸。例如,在第六工作區域1724f中,一個或多個零件可被塗刷、包裝、用塑膠包裹、固定到一個或多個托板或諸如此類,並裝載在卡車上以用於裝運。根據需要或必要,可包括或省略用於第六工作區域1724f的封閉空間。
在選擇的實施例中,網絡1740可包括透過一個或多個介面機構1728串聯連接的多個工作區域1724。這種介面機構1728可使一個或多個零件順利且有效地從一個工作區域1724流向下一個工作區域。因此,工作區域1724可配置在網絡1740中,使得與其相關聯的任務可以所需或期望的順序執行。
任何該的封閉空間可將惰性或基本惰性氣體(例如:真空、氮氣、氬氣、二氧化碳或諸如此類或其組合或子組合)的濃度保持在期望水平以上(例如,等於或大於約99.9體積百分比)。或者,或除此之外,封閉空間可保持氧氣和/或水蒸氣的濃度低於大氣水平(例如,對於氣態氧小於0.05體積百分比,對於水蒸氣小於0.05體積百分比)。
可透過滾動或以其它方式在路徑(例如,混凝土地板)上移動、輸送系統、軌道、利用傳統鐵路概念之多個軌道的組合、使用編碼器在軌道上進行線性運動、由滑輪系統提供的線性運動、由磁懸浮軌道提供的運動和/或懸浮、經由輸送系統或輸送帶的運動,或諸如此類或其組合或子組合,藉由介面機構1728使用車輛運輸列印床、零件或其它材料。可以運輸重量為2,000公斤或更大的大型零件。車輛可具有在支撐表面上滾動的車輪。支撐表面可以是地板(例如,具有應用於其上或嵌入其中的視覺、電子或磁性可檢測路徑的地板)。支撐表面也可以是一個或多個軌道。這種軌道可以位於由車輛承載的零件下方。或者,這種軌道可以位於由車輛承載的零件上方。也就是說,軌道可以是高架軌道,且車輛可為滾動在高架軌道上的托架或台車,同時懸掛其下方的零件。
輪式或其他車輛可以手動、自動、自主或半自主地控制和/或操作。 例如,在選擇的實施例中,一個或多個輪式車輛可由一個或多個人類操作者推動和/或轉向。在其它實施例中,各種車載或車外控制系統可感測關於車輛正在發生的事情並指示車輛何時移動、何時停止、如何轉向或諸如此類。
受益於在前面的描述和相關附圖中呈現的教導的本領域技術人員將想到本發明的許多修改和其他實施例。因此,應當理解,本發明不限於所公開的特定實施例,並且希望修改和實施例包括在所附權利要求的範圍內。 還應當理解,本發明的其它實施例可在不存在本文沒有具體公開的元件/步驟的情況下實施。
100、220、300、900B、1300‧‧‧積層製造系統110、310‧‧‧能量圖案化系統112、950‧‧‧能量源114‧‧‧光束成形器116、230‧‧‧能量圖案化單元118、222‧‧‧退回能量處理單元120、232、320、237A-237E‧‧‧圖像中繼122‧‧‧二維圖像124‧‧‧虛線輪廓的正方形140、234A、234B、234C、234D、340‧‧‧物品處理單元142、342‧‧‧材料分配器144、344‧‧‧材料146、390‧‧‧床148‧‧‧臨時牆149‧‧‧結構150、350‧‧‧控制處理器224‧‧‧發電機225‧‧‧加熱/冷卻熱管理系統226‧‧‧能量轉儲228A、228B、228C‧‧‧中繼236‧‧‧輸入圖案238‧‧‧鏡像像素圖案239‧‧‧像素圖案240‧‧‧能量束系統241‧‧‧圖案化電子束243‧‧‧高壓電力系統244‧‧‧投影儀245‧‧‧光學定址圖案化陰極單元246A、246B‧‧‧成像線圈247‧‧‧圖像中繼系統248‧‧‧偏轉線圈249‧‧‧積層製造元件301、303、305、307、309、311‧‧‧光束312、442‧‧‧雷射器313、315、317、319、331‧‧‧光束316‧‧‧光圖案化單元318、711、720‧‧‧束集堆320‧‧‧最終成像組件333‧‧‧代表性輸入圖案335‧‧‧圖案337‧‧‧負像素圖案344‧‧‧材料床351‧‧‧虛線輪廓370‧‧‧成像光學元件372‧‧‧光均勻化裝置374‧‧‧成像組件376‧‧‧熱/冷鏡378‧‧‧光投影儀380‧‧‧光學定址光閥382‧‧‧偏振器384‧‧‧光學元件386‧‧‧可移動鏡388‧‧‧腔室壁392‧‧‧清掃機構394、1140、1141‧‧‧料斗400、401、440‧‧‧光束組合系統406、408、412、417、423、425、429、433‧‧‧半導體雷射器407、409、413、418、424、426、430、434‧‧‧光子束410、414、416‧‧‧波長濾波器411、428‧‧‧雙波長光束415、432‧‧‧三波長光束419、436‧‧‧四波長光束420、421‧‧‧一系列透鏡422‧‧‧光束427、431、435‧‧‧波長濾波器437、438‧‧‧反射式光學元件439、443‧‧‧光束444‧‧‧繞射式成像光學元件500A、500B‧‧‧反射式光學定址光閥系統501、521‧‧‧高透射層502、522‧‧‧扭轉向列(TN)液晶層503、523‧‧‧光電導體層504、506、524、526‧‧‧抗反射塗層505、525‧‧‧錫氧化物(ITO)導電塗層510、530‧‧‧位置507、509、527、529‧‧‧錨定基板508、528‧‧‧間隔球511、531‧‧‧ITO層512、513、532、533‧‧‧焊點514、534‧‧‧AC電壓源516、536‧‧‧讀取光束517、537、609、705、706、716、717、731‧‧‧偏振器518、538‧‧‧反射光束519、539‧‧‧透射光束520、540‧‧‧冷卻540‧‧‧可選的對流/導電基板600‧‧‧設備601、602、603、612、701、702‧‧‧光源604‧‧‧第一光學組件605‧‧‧光學裝置606、608、610、613、703、704‧‧‧光束607‧‧‧空間偏振閥611‧‧‧第二光學組件700‧‧‧光學組件709、710、707、708、714、715、721、722、724‧‧‧光束712、713‧‧‧偏振旋轉光學定址光閥723‧‧‧半波片725、726、729、917‧‧‧反射鏡727、728、730、732‧‧‧光束800‧‧‧流程圖900、1100、1101‧‧‧示例方案901‧‧‧處理器903(1)-903(4)‧‧‧垂直柱905‧‧‧台架桌907‧‧‧支架910‧‧‧粉末分配單元910B‧‧‧列印頭911‧‧‧壓縮功能920、1120、1121、1304‧‧‧粉床920B(1)-920B(N)‧‧‧構建腔室921、922‧‧‧光束922(1)-922(N)‧‧‧粉末分配單元923‧‧‧位置924(1)-924(N)‧‧‧構建平台925‧‧‧粉末層926(1)-926(N)‧‧‧加熱/冷卻元件928(1)-928(N)‧‧‧溫度傳感器930、1130、1131‧‧‧構建平台930(1)-930(N)‧‧‧光機組件940‧‧‧儲存器941‧‧‧3D物體數據942‧‧‧列印頭控制943‧‧‧構建平台控制944‧‧‧光機組件控制945‧‧‧構建腔室控制955‧‧‧能量束操縱系統/驅動器970‧‧‧箭頭1000、1500‧‧‧過程1110、1111‧‧‧構建腔室1150、1151‧‧‧螺旋鑽1160‧‧‧真空1162‧‧‧氣體噴流1210、1330、1400‧‧‧零件1211‧‧‧坐標系1211a‧‧‧縱向方向1211b‧‧‧側向方向1211c‧‧‧橫向方向1212a‧‧‧第一段1212b‧‧‧第二段1218‧‧‧輸送機1236a、1236b、1236c‧‧‧區域1302‧‧‧粉末腔室1310‧‧‧機器手臂1312‧‧‧操縱器1314‧‧‧傳感器系統1320‧‧‧處理平台1332‧‧‧操縱點1402、1406‧‧‧突出結構1404‧‧‧接腳1408‧‧‧平板1410‧‧‧稜柱鎖定凹口1412‧‧‧凹槽1414‧‧‧突出翼片1416‧‧‧凹口1420‧‧‧標記1610‧‧‧機器1624‧‧‧製造設備1626、1726‧‧‧封閉空間1628‧‧‧氣室1630a、1630b‧‧‧門1632‧‧‧氣體管理系統1724‧‧‧工作區域1724a‧‧‧第一工作區1724b‧‧‧第二工作區1724c‧‧‧第三工作區域1724d‧‧‧第四工作區域1724e‧‧‧第五工作區域1724f‧‧‧第六工作區域1728‧‧‧介面機構1740‧‧‧網絡步驟202‧‧‧定位材料步驟204‧‧‧發射未圖案化能量步驟206‧‧‧成形、改變且導向能量圖案化單元步驟208‧‧‧圖案化能量步驟210‧‧‧處理退回能量步驟212‧‧‧中繼圖像朝向材料步驟214‧‧‧應用圖案化能量於材料步驟216‧‧‧迴路步驟218‧‧‧迴路步驟810‧‧‧獲得關於放大率的信息以及與入射光強度與像素尺寸相關的圖像距離,入射光係為用於從列印面上的粉末材料形成物體所需的入射光步驟820‧‧‧選擇與配置一透鏡組件,以提供入射光具有合適放大率或鍵結粉末材料所需的強度步驟830‧‧‧執行安裝在一組或多組補償支架上的一組或多組反射鏡以及安裝在構建平台支架上可用於將入射光引導到列印面的最終反射鏡之多個旋轉步驟840‧‧‧執行安裝在一組或多組補償支架上的一組或多組反射鏡以及安裝在構建平台支架上可用於控制跨越列印面之恆定圖像距離的最終反射鏡之多個平移運動步驟1010‧‧‧分配粉末材料以形成在構建平台的支撐表面上粉床的第一層步驟1020‧‧‧選擇性熔融粉床的第一層的一部分以形成在粉床的第一層之熔融部分之外的一個或多個第一壁,一個或多個第一壁包含構建平台上的粉床的第一層的另一部分步驟1030‧‧‧分配粉末材料以在粉床的第一層上形成粉床的第二層步驟1040‧‧‧選擇性地熔融粉床的第二層的一部分以形成粉床的第二層的熔融部分之外的一個或多個第二壁,一個或多個第二壁包含粉床的第二層的另一部分步驟1510‧‧‧在列印作業期間以預定間隔週期性地收集多個粉末樣品步驟1520‧‧‧執行一組粉末樣品的表徵步驟1530‧‧‧根據表徵結果判定是否修改列印作業使用的一組參數或中止列印作業步驟1540‧‧‧包裝在多個樣品罐中的粉末樣品
參考以下圖式,描述本公開的非限制性和非全面的實施例,其中除非另有說明,否則在各個圖式中相同的附圖標記表示相同的元件。 第1A圖說明一種積層製造系統。 第1B圖為構成積層製造系統的結構之俯視圖。 第2圖說明一種積層製造方法。 第3A圖為包含雷射器的積層製造系統之草圖說明。 第3B圖為第3A圖之光圖案化單元的細部描述。 第3C圖為用以引導和重新圖案化使用多個圖像中繼的光束之具有“開關場”的積層製造系統之一實施例。 第3D圖說明一種簡單的鏡像像素重新映射。 第3E圖說明用以像素重新映射的一系列圖像轉換的圖像中繼。 第3F圖說明一種可圖案化電子能量束的積層製造系統。 第3G圖說明第3F圖之電子束圖案化單元的細部描述。 第4A-4C圖說明各種光束結合的實施例。 第5A-5B圖說明反射式光圖案化單元的實施例。 第6圖說明光線再生利用。 第7圖為極化光束系統。 第8圖為放大率變化和支架移動的流程圖。 第9A-9B圖分別說明粉床系統與熱管理系統。 第10圖說明臨時牆(temporary walls)的積層形成以容置粉末的流程圖。 第11A-11B圖說明粉末移除的實施例。 第12A-12B圖說明具有多個區域的長零件製造。 第13A-13C圖說明於操縱點的零件處理。 第14圖為具有積層限定操縱點的代表性零件。 第15圖為說明粉末樣品測試和特性的流程圖。 第16圖為封閉的積層製造設備的說明。 第17圖為具有多個工作區的積層製造設備的說明。
100‧‧‧積層製造系統
110‧‧‧能量圖案化系統
112‧‧‧能量源
114‧‧‧光束成形器
116‧‧‧能量圖案化單元
118‧‧‧退回能量處理單元
120‧‧‧圖像中繼
122‧‧‧二維圖像
140‧‧‧物品處理單元
142‧‧‧材料分配器
144‧‧‧材料
146‧‧‧床
148‧‧‧臨時牆
150‧‧‧控制處理器
Claims (5)
- 一種用以積層製造的光束組合系統,其包含:一第一雷射器,用以發射具有一第一波長的光束;一第二雷射器,用以發射具有不同於該第一波長的一第二波長的光束;光束成形器,用以形成一單光束,該光束成形器包含至少一波長濾波器,以使具有該第一波長的光束通過並反射一共同光束(common beam)中具有該第二波長的光束;一光學定址光圖案化單元,用以接收該共同光束並發射作為一二維圖案化光束的光,該光學定址光圖案化單元退回形成該二維圖案化光束不需要的能量;一圖像中繼,用以接收該二維圖案化光束並將其作為一二維圖像聚焦在一粉床上;以及一退回光能量處理單元,用以重新使用該被退回的能量;其中,該退回光能量處理單元包括一個或多個中繼(relay),用以將該被退回的能量中繼到一發電機、一加熱/冷卻熱管理系統與一能量轉儲(energy dump)中的其中一個或多個。
- 根據申請專利範圍第1項之用以積層製造的光束組合系統,其中該光束成形器更包含透射式、反射式以及繞射式的光學元件中至少其中之一,並且其中至少結合三種波長的光。
- 一種積層製造系統,包含:一高能量光子源,用以產生一光束; 一反射圖案化單元,用以接收該光束並反射一二維圖案光束,同時退回形成該二維圖案化光束不需要的能量;一圖像中繼,用以接收該二維圖案光束並將其聚焦為在一粉床上的一二維圖案;以及一退回光能量處理單元,用以重新使用該被退回的能量;其中,該退回光能量處理單元包括一個或多個中繼(relay),用以將該被退回的能量中繼到一發電機、一加熱/冷卻熱管理系統與一能量轉儲(energy dump)中的其中一個或多個。
- 根據申請專利範圍第3項之積層製造系統,其中該反射圖案化單元被光學定址。
- 根據申請專利範圍第3項之積層製造系統,其中該反射圖案化單元被冷卻。
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