TWI657716B - 顯示裝置 - Google Patents

顯示裝置 Download PDF

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Publication number
TWI657716B
TWI657716B TW105143921A TW105143921A TWI657716B TW I657716 B TWI657716 B TW I657716B TW 105143921 A TW105143921 A TW 105143921A TW 105143921 A TW105143921 A TW 105143921A TW I657716 B TWI657716 B TW I657716B
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TW
Taiwan
Prior art keywords
film
etching
electrode layer
transistor
layer
Prior art date
Application number
TW105143921A
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English (en)
Chinese (zh)
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TW201714489A (zh
Inventor
宮入秀和
小森茂樹
伊佐敏行
梅崎敦司
Original Assignee
半導體能源研究所股份有限公司
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Publication of TW201714489A publication Critical patent/TW201714489A/zh
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Publication of TWI657716B publication Critical patent/TWI657716B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13069—Thin film transistor [TFT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Control Of El Displays (AREA)
TW105143921A 2008-03-05 2009-02-26 顯示裝置 TWI657716B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008-055024 2008-03-05
JP2008055024 2008-03-05

Publications (2)

Publication Number Publication Date
TW201714489A TW201714489A (zh) 2017-04-16
TWI657716B true TWI657716B (zh) 2019-04-21

Family

ID=41052679

Family Applications (3)

Application Number Title Priority Date Filing Date
TW105143921A TWI657716B (zh) 2008-03-05 2009-02-26 顯示裝置
TW098106187A TWI486096B (zh) 2008-03-05 2009-02-26 電致發光顯示裝置的製造方法
TW104107395A TWI622321B (zh) 2008-03-05 2009-02-26 顯示裝置

Family Applications After (2)

Application Number Title Priority Date Filing Date
TW098106187A TWI486096B (zh) 2008-03-05 2009-02-26 電致發光顯示裝置的製造方法
TW104107395A TWI622321B (zh) 2008-03-05 2009-02-26 顯示裝置

Country Status (5)

Country Link
US (1) US8101442B2 (enExample)
JP (11) JP5512988B2 (enExample)
KR (1) KR101519890B1 (enExample)
CN (2) CN101527284B (enExample)
TW (3) TWI657716B (enExample)

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US8766253B2 (en) * 2010-09-10 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
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US8679986B2 (en) 2010-10-14 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
WO2012117695A1 (ja) * 2011-02-28 2012-09-07 シャープ株式会社 半導体装置及びその製造方法並びに表示装置
JP6076038B2 (ja) * 2011-11-11 2017-02-08 株式会社半導体エネルギー研究所 表示装置の作製方法
JP6033071B2 (ja) * 2011-12-23 2016-11-30 株式会社半導体エネルギー研究所 半導体装置
KR101996438B1 (ko) * 2012-12-13 2019-07-05 삼성디스플레이 주식회사 표시 장치용 기판, 이를 포함한 표시 장치 및 표시 장치의 제조 방법
US9096426B2 (en) * 2013-04-05 2015-08-04 The United States Of America As Represented By The Secretary Of The Army Electronic device structure and method of making electronic devices and integrated circuits using grayscale technology and multilayer thin-film composites
CN104062843A (zh) * 2014-07-18 2014-09-24 深圳市华星光电技术有限公司 一种掩膜板、阵列基板制作方法及阵列基板
CN105390551B (zh) * 2015-10-28 2018-05-29 京东方科技集团股份有限公司 薄膜晶体管及其制造方法、阵列基板、显示装置
CN105789327B (zh) * 2016-05-17 2019-05-03 京东方科技集团股份有限公司 一种薄膜晶体管及其制备方法、阵列基板、显示装置
EP4068265B1 (en) 2019-11-29 2025-03-26 BOE Technology Group Co., Ltd. Display substrate and manufacturing method therefor, and display device
CN115295563A (zh) * 2022-08-25 2022-11-04 昆山国显光电有限公司 阵列基板及其制备方法

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