CN101527284B - El显示装置的制造方法 - Google Patents

El显示装置的制造方法 Download PDF

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Publication number
CN101527284B
CN101527284B CN200910128517.8A CN200910128517A CN101527284B CN 101527284 B CN101527284 B CN 101527284B CN 200910128517 A CN200910128517 A CN 200910128517A CN 101527284 B CN101527284 B CN 101527284B
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Prior art keywords
film
etching
electrode layer
layer
thin
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Expired - Fee Related
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Chinese (zh)
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CN101527284A (zh
Inventor
宫入秀和
小森茂树
伊佐敏行
梅崎敦司
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13069—Thin film transistor [TFT]

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Control Of El Displays (AREA)
CN200910128517.8A 2008-03-05 2009-03-05 El显示装置的制造方法 Expired - Fee Related CN101527284B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410220695.4A CN103987146B (zh) 2008-03-05 2009-03-05 El显示装置的制造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008055024 2008-03-05
JP2008055024 2008-03-05
JP2008-055024 2008-03-05

Related Child Applications (1)

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Publications (2)

Publication Number Publication Date
CN101527284A CN101527284A (zh) 2009-09-09
CN101527284B true CN101527284B (zh) 2014-07-02

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US (1) US8101442B2 (enExample)
JP (11) JP5512988B2 (enExample)
KR (1) KR101519890B1 (enExample)
CN (2) CN103987146B (enExample)
TW (3) TWI486096B (enExample)

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US8202769B2 (en) 2009-03-11 2012-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
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JPWO2011141949A1 (ja) * 2010-05-10 2013-07-22 パナソニック株式会社 結晶性半導体膜の製造方法、結晶性半導体膜付き基板、薄膜トランジスタ
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KR101996438B1 (ko) * 2012-12-13 2019-07-05 삼성디스플레이 주식회사 표시 장치용 기판, 이를 포함한 표시 장치 및 표시 장치의 제조 방법
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CN104062843A (zh) 2014-07-18 2014-09-24 深圳市华星光电技术有限公司 一种掩膜板、阵列基板制作方法及阵列基板
CN105390551B (zh) * 2015-10-28 2018-05-29 京东方科技集团股份有限公司 薄膜晶体管及其制造方法、阵列基板、显示装置
CN105789327B (zh) * 2016-05-17 2019-05-03 京东方科技集团股份有限公司 一种薄膜晶体管及其制备方法、阵列基板、显示装置
WO2021102997A1 (zh) 2019-11-29 2021-06-03 京东方科技集团股份有限公司 显示基板及其制作方法、显示装置
CN115295563A (zh) * 2022-08-25 2022-11-04 昆山国显光电有限公司 阵列基板及其制备方法

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