CN1808737A - 有机薄膜晶体管,其制造方法以及具有该晶体管的平板显示器 - Google Patents
有机薄膜晶体管,其制造方法以及具有该晶体管的平板显示器 Download PDFInfo
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- CN1808737A CN1808737A CN200510131536.8A CN200510131536A CN1808737A CN 1808737 A CN1808737 A CN 1808737A CN 200510131536 A CN200510131536 A CN 200510131536A CN 1808737 A CN1808737 A CN 1808737A
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- derivative
- insulating barrier
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Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
- Element Separation (AREA)
Abstract
Description
Claims (32)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040091489 | 2004-11-10 | ||
KR1020040091489A KR100669752B1 (ko) | 2004-11-10 | 2004-11-10 | 유기 박막 트랜지스터, 이의 제조 방법 및 이를 구비한평판표시장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1808737A true CN1808737A (zh) | 2006-07-26 |
CN100568572C CN100568572C (zh) | 2009-12-09 |
Family
ID=35645539
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005101315368A Active CN100568572C (zh) | 2004-11-10 | 2005-11-10 | 有机薄膜晶体管,其制造方法以及具有该晶体管的平板显示器 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8030642B2 (zh) |
EP (1) | EP1657751B1 (zh) |
JP (1) | JP4384623B2 (zh) |
KR (1) | KR100669752B1 (zh) |
CN (1) | CN100568572C (zh) |
DE (1) | DE602005010185D1 (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101527284A (zh) * | 2008-03-05 | 2009-09-09 | 株式会社半导体能源研究所 | El显示装置的制造方法 |
CN104600206A (zh) * | 2015-01-13 | 2015-05-06 | 昆山维信诺科技有限公司 | Oled器件及oled器件的制作方法 |
TWI493631B (zh) * | 2012-05-31 | 2015-07-21 | Au Optronics Corp | 半導體元件及其製造方法 |
CN104871080A (zh) * | 2012-12-28 | 2015-08-26 | 夏普株式会社 | 液晶显示器 |
CN107845727A (zh) * | 2017-11-07 | 2018-03-27 | 深圳市华星光电半导体显示技术有限公司 | 有机薄膜晶体管及其制备方法 |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100603393B1 (ko) * | 2004-11-10 | 2006-07-20 | 삼성에스디아이 주식회사 | 유기박막 트랜지스터 및 그의 제조방법과 유기 박막트랜지스터를 구비한 유기전계 발광표시장치 |
JP4922563B2 (ja) * | 2005-03-14 | 2012-04-25 | 株式会社リコー | 有機薄膜トランジスタ |
KR100647693B1 (ko) * | 2005-05-24 | 2006-11-23 | 삼성에스디아이 주식회사 | 유기박막 트랜지스터 및 그의 제조방법과 유기 박막트랜지스터를 구비한 유기전계 발광표시장치 |
US8138075B1 (en) | 2006-02-06 | 2012-03-20 | Eberlein Dietmar C | Systems and methods for the manufacture of flat panel devices |
US7411213B2 (en) * | 2006-04-03 | 2008-08-12 | Chunghwa Picture Tubes, Ltd. | Pixel structure, thin film transistor array substrate and liquid crystal display panel |
US20080082960A1 (en) * | 2006-09-29 | 2008-04-03 | Mcdougal Monty D | Method and System For Controlling The Release of Data For Multiple-Level Security Systems |
US8981348B2 (en) | 2006-12-07 | 2015-03-17 | Samsung Display Co., Ltd. | Semiconducting element, organic light emitting display including the same, and method of manufacturing the semiconducting element |
EP1930963B1 (en) * | 2006-12-07 | 2016-03-02 | Samsung Display Co., Ltd. | Method of manufacturing a semiconducting device and semiconducting device |
GB0709093D0 (en) * | 2007-05-11 | 2007-06-20 | Plastic Logic Ltd | Electronic device incorporating parylene within a dielectric bilayer |
JP5458669B2 (ja) * | 2009-05-28 | 2014-04-02 | ソニー株式会社 | 薄膜トランジスタ、薄膜トランジスタの製造方法、表示装置、および電子機器 |
KR101959693B1 (ko) * | 2009-10-09 | 2019-03-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
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CN100568572C (zh) | 2009-12-09 |
JP2006140436A (ja) | 2006-06-01 |
EP1657751B1 (en) | 2008-10-08 |
EP1657751A1 (en) | 2006-05-17 |
KR100669752B1 (ko) | 2007-01-16 |
JP4384623B2 (ja) | 2009-12-16 |
US8030642B2 (en) | 2011-10-04 |
KR20060042727A (ko) | 2006-05-15 |
DE602005010185D1 (de) | 2008-11-20 |
US20060099526A1 (en) | 2006-05-11 |
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