TWI632542B - 顯示裝置 - Google Patents

顯示裝置 Download PDF

Info

Publication number
TWI632542B
TWI632542B TW106112241A TW106112241A TWI632542B TW I632542 B TWI632542 B TW I632542B TW 106112241 A TW106112241 A TW 106112241A TW 106112241 A TW106112241 A TW 106112241A TW I632542 B TWI632542 B TW I632542B
Authority
TW
Taiwan
Prior art keywords
transistor
image
display device
image signal
layer
Prior art date
Application number
TW106112241A
Other languages
English (en)
Chinese (zh)
Other versions
TW201727615A (zh
Inventor
Shunpei Yamazaki
山崎舜平
Original Assignee
Semiconductor Energy Laboratory Co., Ltd.
日商半導體能源研究所股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co., Ltd., 日商半導體能源研究所股份有限公司 filed Critical Semiconductor Energy Laboratory Co., Ltd.
Publication of TW201727615A publication Critical patent/TW201727615A/zh
Application granted granted Critical
Publication of TWI632542B publication Critical patent/TWI632542B/zh

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3648—Control of matrices with row and column drivers using an active matrix
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3648—Control of matrices with row and column drivers using an active matrix
    • G09G3/3655—Details of drivers for counter electrodes, e.g. common electrodes for pixel capacitors or supplementary storage capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/02—Improving the quality of display appearance
    • G09G2320/0252—Improving the response speed
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/04—Maintaining the quality of display appearance
    • G09G2320/043—Preventing or counteracting the effects of ageing
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/10—Special adaptations of display systems for operation with variable images
    • G09G2320/103—Detection of image changes, e.g. determination of an index representative of the image change
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2340/00—Aspects of display data processing
    • G09G2340/16—Determination of a pixel data signal depending on the signal applied in the previous frame
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/3433—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using light modulating elements actuated by an electric field and being other than liquid crystal devices and electrochromic devices
    • G09G3/344—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using light modulating elements actuated by an electric field and being other than liquid crystal devices and electrochromic devices based on particles moving in a fluid or in a gas, e.g. electrophoretic devices
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3622—Control of matrices with row and column drivers using a passive matrix
    • G09G3/3629—Control of matrices with row and column drivers using a passive matrix using liquid crystals having memory effects, e.g. ferroelectric liquid crystals
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3648—Control of matrices with row and column drivers using an active matrix
    • G09G3/3651—Control of matrices with row and column drivers using an active matrix using multistable liquid crystals, e.g. ferroelectric liquid crystals

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Liquid Crystal Display Device Control (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
TW106112241A 2010-01-24 2011-01-18 顯示裝置 TWI632542B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010-012664 2010-01-24
JP2010012664 2010-01-24

Publications (2)

Publication Number Publication Date
TW201727615A TW201727615A (zh) 2017-08-01
TWI632542B true TWI632542B (zh) 2018-08-11

Family

ID=44306656

Family Applications (4)

Application Number Title Priority Date Filing Date
TW106112241A TWI632542B (zh) 2010-01-24 2011-01-18 顯示裝置
TW107117783A TWI654597B (zh) 2010-01-24 2011-01-18 顯示裝置
TW100101709A TWI525599B (zh) 2010-01-24 2011-01-18 顯示裝置
TW104144470A TWI590222B (zh) 2010-01-24 2011-01-18 顯示裝置

Family Applications After (3)

Application Number Title Priority Date Filing Date
TW107117783A TWI654597B (zh) 2010-01-24 2011-01-18 顯示裝置
TW100101709A TWI525599B (zh) 2010-01-24 2011-01-18 顯示裝置
TW104144470A TWI590222B (zh) 2010-01-24 2011-01-18 顯示裝置

Country Status (6)

Country Link
US (2) US9269725B2 (enExample)
JP (6) JP2011170346A (enExample)
KR (5) KR101873730B1 (enExample)
CN (2) CN102714026B (enExample)
TW (4) TWI632542B (enExample)
WO (1) WO2011089853A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI703542B (zh) * 2019-06-05 2020-09-01 友達光電股份有限公司 背光訊號處理方法及顯示裝置

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8247276B2 (en) * 2009-02-20 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, method for manufacturing the same, and semiconductor device
KR101751908B1 (ko) * 2009-10-21 2017-06-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전압 조정 회로
CN102714026B (zh) 2010-01-24 2016-09-14 株式会社半导体能源研究所 显示装置
US8879010B2 (en) 2010-01-24 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Display device
KR20190093706A (ko) 2010-01-24 2019-08-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치와 이의 제조 방법
KR20180020327A (ko) * 2010-03-08 2018-02-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치를 제작하는 방법
JP5852793B2 (ja) 2010-05-21 2016-02-03 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
WO2012004915A1 (ja) * 2010-07-08 2012-01-12 シャープ株式会社 太陽電池パネル、液晶表示システム、及び太陽電池パネルの制御方法
US9293103B2 (en) * 2011-04-07 2016-03-22 Sharp Kabushiki Kaisha Display device, and method for driving same
WO2014034235A1 (ja) * 2012-08-30 2014-03-06 シャープ株式会社 液晶表示装置およびその駆動方法
JP2014052550A (ja) * 2012-09-07 2014-03-20 Sharp Corp 画像データ出力制御装置、表示装置、プログラムおよびその記録媒体
WO2014077295A1 (en) 2012-11-15 2014-05-22 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
CN103293785B (zh) * 2012-12-24 2016-05-18 上海天马微电子有限公司 Tn型液晶显示装置及其触控方法
KR102109166B1 (ko) * 2013-01-15 2020-05-12 삼성디스플레이 주식회사 박막 트랜지스터 및 이를 구비하는 표시 기판
US9626046B2 (en) * 2013-09-24 2017-04-18 Apple Inc. Devices and methods for reduction of display to touch crosstalk
KR102347852B1 (ko) * 2014-09-05 2022-01-06 삼성전자주식회사 터치 스크린 패널, 전자 노트 및 휴대용 단말기
JP2016066065A (ja) 2014-09-05 2016-04-28 株式会社半導体エネルギー研究所 表示装置、および電子機器
JPWO2016087999A1 (ja) 2014-12-01 2017-10-12 株式会社半導体エネルギー研究所 表示装置、該表示装置を有する表示モジュール、及び該表示装置または該表示モジュールを有する電子機器
KR102297652B1 (ko) * 2015-03-31 2021-09-07 삼성디스플레이 주식회사 표시 장치
JP2018013765A (ja) 2016-04-28 2018-01-25 株式会社半導体エネルギー研究所 電子デバイス
TWI753908B (zh) * 2016-05-20 2022-02-01 日商半導體能源硏究所股份有限公司 半導體裝置、顯示裝置及電子裝置
CN107316946A (zh) * 2017-07-12 2017-11-03 上海天马有机发光显示技术有限公司 有机电致发光器件及有机电致发光显示面板
KR102704825B1 (ko) * 2018-10-01 2024-09-09 삼성디스플레이 주식회사 표시 장치

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020180673A1 (en) * 2000-04-28 2002-12-05 Kazuhiho Tsuda Display device method of driving same and electronic device mounting same
US20070058418A1 (en) * 2003-06-20 2007-03-15 Renesas Technology Corp. Semiconductor memory device having memory cells requiring no refresh operation
US20080068359A1 (en) * 2006-09-15 2008-03-20 Semiconductor Energy Laboratory Co., Ltd. Display device and method of driving the same
TW200919431A (en) * 2007-07-06 2009-05-01 Toshiba Matsushita Display Tec Liquid crystal display device

Family Cites Families (234)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5698864A (en) 1982-04-13 1997-12-16 Seiko Epson Corporation Method of manufacturing a liquid crystal device having field effect transistors
US6294796B1 (en) 1982-04-13 2001-09-25 Seiko Epson Corporation Thin film transistors and active matrices including same
US5736751A (en) 1982-04-13 1998-04-07 Seiko Epson Corporation Field effect transistor having thick source and drain regions
FR2527385B1 (fr) 1982-04-13 1987-05-22 Suwa Seikosha Kk Transistor a couche mince et panneau d'affichage a cristaux liquides utilisant ce type de transistor
JPS60198861A (ja) 1984-03-23 1985-10-08 Fujitsu Ltd 薄膜トランジスタ
JPH0244256B2 (ja) 1987-01-28 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244258B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244260B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPS63210023A (ja) 1987-02-24 1988-08-31 Natl Inst For Res In Inorg Mater ＩｎＧａＺｎ↓４Ｏ↓７で示される六方晶系の層状構造を有する化合物およびその製造法
JPH0244262B2 (ja) 1987-02-27 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244263B2 (ja) 1987-04-22 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
US5162901A (en) 1989-05-26 1992-11-10 Sharp Kabushiki Kaisha Active-matrix display device with added capacitance electrode wire and secondary wire connected thereto
US5247375A (en) 1990-03-09 1993-09-21 Hitachi, Ltd. Display device, manufacturing method thereof and display panel
EP0456453B1 (en) * 1990-05-07 1995-09-06 Fujitsu Limited High quality active matrix-type display device
KR940008180B1 (ko) 1990-12-27 1994-09-07 가부시끼가이샤 한도다이 에네르기 겐꾸쇼 액정 전기 광학 장치 및 그 구동 방법
JPH05224626A (ja) 1992-02-14 1993-09-03 Fujitsu Ltd 液晶表示装置
TW222345B (en) 1992-02-25 1994-04-11 Semicondustor Energy Res Co Ltd Semiconductor and its manufacturing method
JPH05251705A (ja) 1992-03-04 1993-09-28 Fuji Xerox Co Ltd 薄膜トランジスタ
JP3476241B2 (ja) 1994-02-25 2003-12-10 株式会社半導体エネルギー研究所 アクティブマトリクス型表示装置の表示方法
JP3479375B2 (ja) 1995-03-27 2003-12-15 科学技術振興事業団 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとｐｎ接合を形成した金属酸化物半導体装置およびそれらの製造方法
DE69635107D1 (de) 1995-08-03 2005-09-29 Koninkl Philips Electronics Nv Halbleiteranordnung mit einem transparenten schaltungselement
JP3625598B2 (ja) 1995-12-30 2005-03-02 三星電子株式会社 液晶表示装置の製造方法
WO1998002773A1 (en) 1996-07-15 1998-01-22 Hitachi, Ltd. Display device
JP3883641B2 (ja) 1997-03-27 2007-02-21 株式会社半導体エネルギー研究所 コンタクト構造およびアクティブマトリクス型表示装置
US6458071B1 (en) * 1997-12-08 2002-10-01 Jerry I. Jacobson Method for electromagnetically restructuring water for organismic consumption
US7663607B2 (en) 2004-05-06 2010-02-16 Apple Inc. Multipoint touchscreen
JP4170454B2 (ja) 1998-07-24 2008-10-22 Ｈｏｙａ株式会社 透明導電性酸化物薄膜を有する物品及びその製造方法
JP2000150861A (ja) 1998-11-16 2000-05-30 Tdk Corp 酸化物薄膜
JP3276930B2 (ja) 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
JP3462135B2 (ja) * 1999-01-14 2003-11-05 シャープ株式会社 二次元画像検出器およびアクティブマトリクス基板並びに表示装置
JP2000267066A (ja) 1999-03-15 2000-09-29 Canon Inc 液晶素子
US7379039B2 (en) * 1999-07-14 2008-05-27 Sony Corporation Current drive circuit and display device using same pixel circuit, and drive method
TW460731B (en) 1999-09-03 2001-10-21 Ind Tech Res Inst Electrode structure and production method of wide viewing angle LCD
TW468283B (en) * 1999-10-12 2001-12-11 Semiconductor Energy Lab EL display device and a method of manufacturing the same
TW480727B (en) * 2000-01-11 2002-03-21 Semiconductor Energy Laboratro Semiconductor display device
JP4537526B2 (ja) * 2000-03-22 2010-09-01 東芝モバイルディスプレイ株式会社 液晶表示装置及びその駆動方法
TW531901B (en) * 2000-04-27 2003-05-11 Semiconductor Energy Lab Light emitting device
JP3766926B2 (ja) 2000-04-28 2006-04-19 シャープ株式会社 表示装置の駆動方法およびそれを用いた表示装置ならびに携帯機器
US20020116485A1 (en) 2001-02-21 2002-08-22 Equipe Communications Corporation Out-of-band network management channels
US20020057018A1 (en) 2000-05-20 2002-05-16 Equipe Communications Corporation Network device power distribution scheme
US6880086B2 (en) 2000-05-20 2005-04-12 Ciena Corporation Signatures for facilitating hot upgrades of modular software components
US7111053B1 (en) 2000-05-20 2006-09-19 Ciena Corporation Template-driven management of telecommunications network via utilization of operations support services clients
US7266595B1 (en) 2000-05-20 2007-09-04 Ciena Corporation Accessing network device data through user profiles
US7240364B1 (en) 2000-05-20 2007-07-03 Ciena Corporation Network device identity authentication
US7222147B1 (en) 2000-05-20 2007-05-22 Ciena Corporation Processing network management data in accordance with metadata files
US20020001307A1 (en) 2000-05-20 2002-01-03 Equipe Communications Corporation VPI/VCI availability index
US7143153B1 (en) 2000-11-09 2006-11-28 Ciena Corporation Internal network device dynamic health monitoring
US6639910B1 (en) 2000-05-20 2003-10-28 Equipe Communications Corporation Functional separation of internal and external controls in network devices
US20020118031A1 (en) 2001-02-27 2002-08-29 Equipe Communications Corporation Connector test card
US6658579B1 (en) 2000-05-20 2003-12-02 Equipe Communications Corporation Network device with local timing systems for automatic selection between redundant, synchronous central timing systems
US6654903B1 (en) 2000-05-20 2003-11-25 Equipe Communications Corporation Vertical fault isolation in a computer system
US6332198B1 (en) 2000-05-20 2001-12-18 Equipe Communications Corporation Network device for supporting multiple redundancy schemes
US6658580B1 (en) 2000-05-20 2003-12-02 Equipe Communications Corporation Redundant, synchronous central timing systems with constant master voltage controls and variable slave voltage controls
US6868092B1 (en) 2000-05-20 2005-03-15 Ciena Corporation Network device with embedded timing synchronization
US6876652B1 (en) 2000-05-20 2005-04-05 Ciena Corporation Network device with a distributed switch fabric timing system
US7054272B1 (en) 2000-07-11 2006-05-30 Ciena Corporation Upper layer network device including a physical layer test port
US7280529B1 (en) 2000-05-20 2007-10-09 Ciena Corporation Providing network management access through user profiles
US7039046B1 (en) 2000-05-20 2006-05-02 Ciena Corporation Network device including central and distributed switch fabric subsystems
US6934749B1 (en) 2000-05-20 2005-08-23 Ciena Corporation Tracking distributed data retrieval in a network device
US6930890B1 (en) 2000-05-20 2005-08-16 Ciena Corporation Network device including reverse orientated modules
US20030120822A1 (en) 2001-04-19 2003-06-26 Langrind Nicholas A. Isolated control plane addressing
JP4089858B2 (ja) 2000-09-01 2008-05-28 国立大学法人東北大学 半導体デバイス
JP5019668B2 (ja) * 2000-09-18 2012-09-05 三洋電機株式会社 表示装置及びその制御方法
JP2002098990A (ja) 2000-09-21 2002-04-05 Toshiba Corp 液晶表示装置
KR20020038482A (ko) 2000-11-15 2002-05-23 모리시타 요이찌 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널
JP2002169499A (ja) * 2000-11-30 2002-06-14 Sanyo Electric Co Ltd 表示パネルの駆動方法及び表示パネルの駆動制御装置
TWI313059B (enExample) * 2000-12-08 2009-08-01 Sony Corporatio
JP3997731B2 (ja) 2001-03-19 2007-10-24 富士ゼロックス株式会社 基材上に結晶性半導体薄膜を形成する方法
JP2002289859A (ja) 2001-03-23 2002-10-04 Minolta Co Ltd 薄膜トランジスタ
JP4278314B2 (ja) * 2001-04-13 2009-06-10 三洋電機株式会社 アクティブマトリクス型表示装置
US7263597B2 (en) 2001-04-19 2007-08-28 Ciena Corporation Network device including dedicated resources control plane
JP4090716B2 (ja) 2001-09-10 2008-05-28 雅司 川崎 薄膜トランジスタおよびマトリクス表示装置
JP3925839B2 (ja) 2001-09-10 2007-06-06 シャープ株式会社 半導体記憶装置およびその試験方法
JP2003098538A (ja) * 2001-09-20 2003-04-03 Seiko Epson Corp 電気光学装置及びその製造方法
JP2003131633A (ja) 2001-10-29 2003-05-09 Sony Corp 表示装置の駆動方法
US7061014B2 (en) 2001-11-05 2006-06-13 Japan Science And Technology Agency Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
JP4164562B2 (ja) 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
JP4014895B2 (ja) 2001-11-28 2007-11-28 東芝松下ディスプレイテクノロジー株式会社 表示装置およびその駆動方法
JP4083486B2 (ja) 2002-02-21 2008-04-30 独立行政法人科学技術振興機構 ＬｎＣｕＯ（Ｓ，Ｓｅ，Ｔｅ）単結晶薄膜の製造方法
JP3980910B2 (ja) 2002-03-12 2007-09-26 東芝松下ディスプレイテクノロジー株式会社 液晶表示装置
CN1445821A (zh) 2002-03-15 2003-10-01 三洋电机株式会社 ZnO膜和ZnO半导体层的形成方法、半导体元件及其制造方法
JP3933591B2 (ja) 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
WO2003091977A1 (fr) * 2002-04-26 2003-11-06 Toshiba Matsushita Display Technology Co., Ltd. Circuit de commande d'un ecran el
US7339187B2 (en) 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
JP2003344823A (ja) 2002-05-23 2003-12-03 Sharp Corp 液晶表示装置および液晶表示駆動方法
US6787835B2 (en) * 2002-06-11 2004-09-07 Hitachi, Ltd. Semiconductor memories
JP2004022625A (ja) 2002-06-13 2004-01-22 Murata Mfg Co Ltd 半導体デバイス及び該半導体デバイスの製造方法
US7105868B2 (en) 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
JP4366914B2 (ja) * 2002-09-25 2009-11-18 日本電気株式会社 表示装置用駆動回路及びそれを用いた表示装置
US7067843B2 (en) 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
EP1605430A4 (en) * 2003-01-22 2008-05-21 Toshiba Matsushita Display Tec Organic el display and active matrix substrate
JP4166105B2 (ja) 2003-03-06 2008-10-15 シャープ株式会社 半導体装置およびその製造方法
JP2004273732A (ja) 2003-03-07 2004-09-30 Sharp Corp アクティブマトリクス基板およびその製造方法
JP4074207B2 (ja) 2003-03-10 2008-04-09 株式会社 日立ディスプレイズ 液晶表示装置
WO2004090847A1 (ja) * 2003-04-02 2004-10-21 Matsushita Electric Industrial Co. Ltd. 表示装置
US20070080905A1 (en) * 2003-05-07 2007-04-12 Toshiba Matsushita Display Technology Co., Ltd. El display and its driving method
JP4108633B2 (ja) 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
US7262463B2 (en) 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
US7145174B2 (en) 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
US7297977B2 (en) 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
EP2413366B1 (en) 2004-03-12 2017-01-11 Japan Science And Technology Agency A switching element of LCDs or organic EL displays
US7282782B2 (en) 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
JP2005300948A (ja) * 2004-04-13 2005-10-27 Hitachi Displays Ltd 表示装置及びその駆動方法
US7211825B2 (en) * 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
JP2006100760A (ja) 2004-09-02 2006-04-13 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
US7285501B2 (en) 2004-09-17 2007-10-23 Hewlett-Packard Development Company, L.P. Method of forming a solution processed device
US7298084B2 (en) 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
US7453065B2 (en) 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
JP5126729B2 (ja) 2004-11-10 2013-01-23 キヤノン株式会社 画像表示装置
US7863611B2 (en) 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
US7791072B2 (en) 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
JP5138163B2 (ja) 2004-11-10 2013-02-06 キヤノン株式会社 電界効果型トランジスタ
EP1810335B1 (en) 2004-11-10 2020-05-27 Canon Kabushiki Kaisha Light-emitting device
EP1815530B1 (en) 2004-11-10 2021-02-17 Canon Kabushiki Kaisha Field effect transistor employing an amorphous oxide
AU2005302962B2 (en) 2004-11-10 2009-05-07 Canon Kabushiki Kaisha Amorphous oxide and field effect transistor
US7829444B2 (en) 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
JP5118810B2 (ja) 2004-11-10 2013-01-16 キヤノン株式会社 電界効果型トランジスタ
JP2006189661A (ja) 2005-01-06 2006-07-20 Toshiba Corp 画像表示装置及びその方法
US7579224B2 (en) 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
TWI445178B (zh) 2005-01-28 2014-07-11 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
TWI505473B (zh) * 2005-01-28 2015-10-21 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
US7858451B2 (en) 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060197092A1 (en) 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
US8681077B2 (en) 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
CN100410736C (zh) * 2005-03-22 2008-08-13 统宝光电股份有限公司 显示器显示电路及其显示方法
US7544967B2 (en) 2005-03-28 2009-06-09 Massachusetts Institute Of Technology Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications
JP4887647B2 (ja) * 2005-03-31 2012-02-29 凸版印刷株式会社 薄膜トランジスタ装置の製造方法
US7645478B2 (en) 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
US8300031B2 (en) 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
JP2006344849A (ja) 2005-06-10 2006-12-21 Casio Comput Co Ltd 薄膜トランジスタ
US7691666B2 (en) 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7402506B2 (en) 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en) 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
KR101139529B1 (ko) * 2005-06-30 2012-05-02 엘지디스플레이 주식회사 유기전계발광소자 및 유기전계발광 표시장치
KR100547515B1 (ko) * 2005-07-27 2006-01-31 실리콘 디스플레이 (주) 유기발광다이오드 표시장치 및 그 구동방법
KR100711890B1 (ko) 2005-07-28 2007-04-25 삼성에스디아이 주식회사 유기 발광표시장치 및 그의 제조방법
JP2007059128A (ja) 2005-08-23 2007-03-08 Canon Inc 有機ｅｌ表示装置およびその製造方法
JP4850457B2 (ja) 2005-09-06 2012-01-11 キヤノン株式会社 薄膜トランジスタ及び薄膜ダイオード
JP4280736B2 (ja) 2005-09-06 2009-06-17 キヤノン株式会社 半導体素子
JP5116225B2 (ja) 2005-09-06 2013-01-09 キヤノン株式会社 酸化物半導体デバイスの製造方法
JP2007073705A (ja) 2005-09-06 2007-03-22 Canon Inc 酸化物半導体チャネル薄膜トランジスタおよびその製造方法
JP4560502B2 (ja) 2005-09-06 2010-10-13 キヤノン株式会社 電界効果型トランジスタ
JP5064747B2 (ja) 2005-09-29 2012-10-31 株式会社半導体エネルギー研究所 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法
EP3614442A3 (en) 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufactoring method thereof
JP5037808B2 (ja) 2005-10-20 2012-10-03 キヤノン株式会社 アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置
CN101577293B (zh) 2005-11-15 2012-09-19 株式会社半导体能源研究所 半导体器件及其制造方法
JP5376750B2 (ja) 2005-11-18 2013-12-25 出光興産株式会社 半導体薄膜、及びその製造方法、並びに薄膜トランジスタ、アクティブマトリックス駆動表示パネル
US7998372B2 (en) * 2005-11-18 2011-08-16 Idemitsu Kosan Co., Ltd. Semiconductor thin film, method for manufacturing the same, thin film transistor, and active-matrix-driven display panel
US7692610B2 (en) 2005-11-30 2010-04-06 Semiconductor Energy Laboratory Co., Ltd. Display device
JP5478000B2 (ja) * 2005-11-30 2014-04-23 株式会社半導体エネルギー研究所 表示装置、表示モジュール、及び電子機器
JP4693757B2 (ja) * 2005-12-02 2011-06-01 株式会社半導体エネルギー研究所 表示装置
TWI292281B (en) 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
US7867636B2 (en) 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (ja) 2006-01-21 2012-07-18 三星電子株式会社 ＺｎＯフィルム及びこれを用いたＴＦＴの製造方法
US7576394B2 (en) 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
JP5015473B2 (ja) * 2006-02-15 2012-08-29 財団法人高知県産業振興センター 薄膜トランジスタアレイ及びその製法
US7977169B2 (en) 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
KR20070101595A (ko) 2006-04-11 2007-10-17 삼성전자주식회사 ＺｎＯ ＴＦＴ
US20070252928A1 (en) 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
KR101529840B1 (ko) * 2006-06-09 2015-06-17 애플 인크. 터치 스크린 액정 디스플레이
US8243027B2 (en) 2006-06-09 2012-08-14 Apple Inc. Touch screen liquid crystal display
JP5028033B2 (ja) 2006-06-13 2012-09-19 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
KR101202040B1 (ko) * 2006-06-30 2012-11-16 엘지디스플레이 주식회사 유기발광다이오드 표시소자 및 그 구동방법
JP4609797B2 (ja) 2006-08-09 2011-01-12 Ｎｅｃ液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
JP4999400B2 (ja) 2006-08-09 2012-08-15 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4332545B2 (ja) 2006-09-15 2009-09-16 キヤノン株式会社 電界効果型トランジスタ及びその製造方法
JP5164357B2 (ja) 2006-09-27 2013-03-21 キヤノン株式会社 半導体装置及び半導体装置の製造方法
JP4274219B2 (ja) 2006-09-27 2009-06-03 セイコーエプソン株式会社 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置
US7622371B2 (en) 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
US7511343B2 (en) * 2006-10-12 2009-03-31 Xerox Corporation Thin film transistor
JP4866703B2 (ja) 2006-10-20 2012-02-01 株式会社 日立ディスプレイズ 液晶表示装置
US8018428B2 (en) * 2006-11-27 2011-09-13 Samsung Electronics Co., Ltd. Electrophoretic display panel, electrophoretic display device having the same and method for driving the same
US7772021B2 (en) 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
JP2008140684A (ja) 2006-12-04 2008-06-19 Toppan Printing Co Ltd カラーｅｌディスプレイおよびその製造方法
WO2008069255A1 (en) 2006-12-05 2008-06-12 Canon Kabushiki Kaisha Method for manufacturing thin film transistor using oxide semiconductor and display apparatus
US8143115B2 (en) 2006-12-05 2012-03-27 Canon Kabushiki Kaisha Method for manufacturing thin film transistor using oxide semiconductor and display apparatus
JP5305630B2 (ja) 2006-12-05 2013-10-02 キヤノン株式会社 ボトムゲート型薄膜トランジスタの製造方法及び表示装置の製造方法
US8207944B2 (en) 2006-12-19 2012-06-26 3M Innovative Properties Company Capacitance measuring circuit and method
KR101303578B1 (ko) 2007-01-05 2013-09-09 삼성전자주식회사 박막 식각 방법
US8207063B2 (en) 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
KR100851215B1 (ko) 2007-03-14 2008-08-07 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치
JP5197058B2 (ja) 2007-04-09 2013-05-15 キヤノン株式会社 発光装置とその作製方法
US20100134452A1 (en) * 2007-04-09 2010-06-03 Hiromi Katoh Display device
WO2008126879A1 (en) 2007-04-09 2008-10-23 Canon Kabushiki Kaisha Light-emitting apparatus and production method thereof
US7795613B2 (en) 2007-04-17 2010-09-14 Toppan Printing Co., Ltd. Structure with transistor
KR101325053B1 (ko) 2007-04-18 2013-11-05 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR20080094300A (ko) 2007-04-19 2008-10-23 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이
KR101334181B1 (ko) 2007-04-20 2013-11-28 삼성전자주식회사 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법
US8274078B2 (en) 2007-04-25 2012-09-25 Canon Kabushiki Kaisha Metal oxynitride semiconductor containing zinc
KR20080099084A (ko) * 2007-05-08 2008-11-12 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법
JP5542297B2 (ja) * 2007-05-17 2014-07-09 株式会社半導体エネルギー研究所 液晶表示装置、表示モジュール及び電子機器
JP2009003437A (ja) 2007-05-18 2009-01-08 Semiconductor Energy Lab Co Ltd 液晶表示装置およびその作製方法
JP5037221B2 (ja) 2007-05-18 2012-09-26 株式会社半導体エネルギー研究所 液晶表示装置及び電子機器
KR101345376B1 (ko) 2007-05-29 2013-12-24 삼성전자주식회사 ＺｎＯ 계 박막 트랜지스터 및 그 제조방법
US8193045B2 (en) 2007-05-31 2012-06-05 Canon Kabushiki Kaisha Manufacturing method of thin film transistor using oxide semiconductor
KR101376073B1 (ko) 2007-06-14 2014-03-21 삼성디스플레이 주식회사 박막 트랜지스터, 이를 포함하는 어레이 기판 및 이의 제조방법
US20090015536A1 (en) 2007-07-06 2009-01-15 Toshiba Matsushita Display Technology Co., Ltd. Liquid crystal display apparatus
TWI350474B (en) 2007-09-29 2011-10-11 Au Optronics Corp Capacitive touch panel with low impedance and method of manufacturing capacitive touch panels with low impedance
WO2009069674A1 (en) * 2007-11-29 2009-06-04 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
JP5213422B2 (ja) 2007-12-04 2013-06-19 キヤノン株式会社 絶縁層を有する酸化物半導体素子およびそれを用いた表示装置
US8202365B2 (en) 2007-12-17 2012-06-19 Fujifilm Corporation Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film
KR100936874B1 (ko) * 2007-12-18 2010-01-14 삼성모바일디스플레이주식회사 박막 트랜지스터의 제조 방법 및 박막 트랜지스터를구비하는 유기전계발광 표시 장치의 제조 방법
TWI374379B (en) 2007-12-24 2012-10-11 Wintek Corp Transparent capacitive touch panel and manufacturing method thereof
KR100963003B1 (ko) * 2008-02-05 2010-06-10 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치
JP2009276744A (ja) * 2008-02-13 2009-11-26 Toshiba Mobile Display Co Ltd Ｅｌ表示装置
JP2009267399A (ja) 2008-04-04 2009-11-12 Fujifilm Corp 半導体装置，半導体装置の製造方法，表示装置及び表示装置の製造方法
JP5325446B2 (ja) 2008-04-16 2013-10-23 株式会社日立製作所 半導体装置及びその製造方法
JP5305731B2 (ja) * 2008-05-12 2013-10-02 キヤノン株式会社 半導体素子の閾値電圧の制御方法
KR101344594B1 (ko) * 2008-05-22 2013-12-26 이데미쓰 고산 가부시키가이샤 스퍼터링 타겟, 그것을 이용한 비정질 산화물 박막의 형성 방법, 및 박막 트랜지스터의 제조 방법
JP4623179B2 (ja) 2008-09-18 2011-02-02 ソニー株式会社 薄膜トランジスタおよびその製造方法
JP5451280B2 (ja) 2008-10-09 2014-03-26 キヤノン株式会社 ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置
KR101515468B1 (ko) 2008-12-12 2015-05-06 삼성전자주식회사 표시장치 및 그 동작방법
US8217913B2 (en) 2009-02-02 2012-07-10 Apple Inc. Integrated touch screen
CN101478005B (zh) * 2009-02-13 2010-06-09 北京大学深圳研究生院 一种金属氧化物薄膜晶体管及其制作方法
JP5185155B2 (ja) 2009-02-24 2013-04-17 株式会社ジャパンディスプレイセントラル 液晶表示装置
JP2010243707A (ja) 2009-04-03 2010-10-28 Asahi Glass Co Ltd 液晶光学変調装置、光強度変調装置および光ヘッド装置
JP5195650B2 (ja) 2009-06-03 2013-05-08 セイコーエプソン株式会社 液晶表示装置、制御方法および電子機器
TWI494828B (zh) 2009-07-29 2015-08-01 Cando Corp 具降低感測結構可視性之電容式觸控面板
JP2011070092A (ja) 2009-09-28 2011-04-07 Sharp Corp 液晶表示装置
KR101717460B1 (ko) 2009-10-16 2017-03-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 액정 표시 장치를 포함한 전자 기기
WO2011070929A1 (en) * 2009-12-11 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US9057758B2 (en) 2009-12-18 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for measuring current, method for inspecting semiconductor device, semiconductor device, and test element group
EP2513893A4 (en) * 2009-12-18 2016-09-07 Semiconductor Energy Lab Liquid crystal display device and electronic device
KR101822353B1 (ko) 2009-12-18 2018-01-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치의 구동 방법 및 표시 장치
KR101763660B1 (ko) * 2009-12-18 2017-08-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 그 구동 방법
CN105353551A (zh) 2009-12-28 2016-02-24 株式会社半导体能源研究所 液晶显示装置及电子设备
KR101842860B1 (ko) 2010-01-20 2018-03-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치의 구동 방법
WO2011089842A1 (en) 2010-01-20 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Driving method of liquid crystal display device
US8879010B2 (en) 2010-01-24 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Display device
CN102714026B (zh) 2010-01-24 2016-09-14 株式会社半导体能源研究所 显示装置
KR20190093706A (ko) 2010-01-24 2019-08-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치와 이의 제조 방법
US20110267303A1 (en) 2010-05-02 2011-11-03 Acer Incorporated Capacitive touch panel
JP5248653B2 (ja) 2010-05-27 2013-07-31 富士フイルム株式会社 導電シート及び静電容量方式タッチパネル

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020180673A1 (en) * 2000-04-28 2002-12-05 Kazuhiho Tsuda Display device method of driving same and electronic device mounting same
US20070058418A1 (en) * 2003-06-20 2007-03-15 Renesas Technology Corp. Semiconductor memory device having memory cells requiring no refresh operation
US20080068359A1 (en) * 2006-09-15 2008-03-20 Semiconductor Energy Laboratory Co., Ltd. Display device and method of driving the same
TW200919431A (en) * 2007-07-06 2009-05-01 Toshiba Matsushita Display Tec Liquid crystal display device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI703542B (zh) * 2019-06-05 2020-09-01 友達光電股份有限公司 背光訊號處理方法及顯示裝置

Also Published As

Publication number Publication date
TWI654597B (zh) 2019-03-21
JP2024069515A (ja) 2024-05-21
CN102714026A (zh) 2012-10-03
KR102069496B1 (ko) 2020-01-28
KR102135326B1 (ko) 2020-07-20
KR20200088506A (ko) 2020-07-22
JP2022008550A (ja) 2022-01-13
TW201727615A (zh) 2017-08-01
JP6117888B2 (ja) 2017-04-19
KR20180001591A (ko) 2018-01-04
TW201833899A (zh) 2018-09-16
TW201214402A (en) 2012-04-01
US20160155761A1 (en) 2016-06-02
CN106057162A (zh) 2016-10-26
JP2020030420A (ja) 2020-02-27
JP2017142515A (ja) 2017-08-17
US9269725B2 (en) 2016-02-23
KR101873730B1 (ko) 2018-07-04
TWI525599B (zh) 2016-03-11
WO2011089853A1 (en) 2011-07-28
US10211230B2 (en) 2019-02-19
KR20200007096A (ko) 2020-01-21
US20110181560A1 (en) 2011-07-28
TW201624459A (zh) 2016-07-01
CN106057162B (zh) 2019-01-22
CN102714026B (zh) 2016-09-14
KR20120118481A (ko) 2012-10-26
KR101815838B1 (ko) 2018-01-08
JP2016026327A (ja) 2016-02-12
JP7868093B2 (ja) 2026-06-01
KR20180058858A (ko) 2018-06-01
TWI590222B (zh) 2017-07-01
JP2011170346A (ja) 2011-09-01

Similar Documents

Publication Publication Date Title
TWI654597B (zh) 顯示裝置
JP7341201B2 (ja) 液晶表示装置
JP6728318B2 (ja) 表示装置