TWI548317B - 接合構造體之製造方法與加熱熔融處理方法以及其系統 - Google Patents
接合構造體之製造方法與加熱熔融處理方法以及其系統 Download PDFInfo
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- TWI548317B TWI548317B TW100122568A TW100122568A TWI548317B TW I548317 B TWI548317 B TW I548317B TW 100122568 A TW100122568 A TW 100122568A TW 100122568 A TW100122568 A TW 100122568A TW I548317 B TWI548317 B TW I548317B
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- temporary bonding
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
- B23K3/06—Solder feeding devices; Solder melting pans
- B23K3/0607—Solder feeding devices
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- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3431—Leadless components
- H05K3/3436—Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components
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- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
- B23K1/0016—Brazing of electronic components
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K1/00—Soldering, e.g. brazing, or unsoldering
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- H05K13/00—Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
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- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/303—Surface mounted components, e.g. affixing before soldering, aligning means, spacing means
- H05K3/305—Affixing by adhesive
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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Description
本發明係有關一種透過將焊料或共晶接合用的嵌入金屬等加熱熔融材料,置入複數個被接合構件間接合成為接合構造體之製造方法與加熱熔融處理方法以及其系統。
透過將焊料凸點或焊料薄片等之焊料或共晶接合用的嵌入金屬,置入複數個被接合構件間焊接接合或共晶接合而製造接合構造體的技術係被廣泛地運用在半導體封裝工程。例如,在半導體封裝工程中,採用了透過焊料凸點將有機基板和半導體基板焊接接合、或透過焊料凸點將半導體基板和半導體晶片焊接接合的技術。
以將半導體基板(半導體晶片)彼此焊接接合的情況為例,欲將焊料凸點熔融以將複數個基板間焊接接合時,必需去除焊料凸點表面的氧化膜。因此,在將稱為「助熔劑」的松香系之還原性的有機劑塗布於基板表面的狀態下,將複數個基板疊層並加熱。該結果為,在藉由助熔劑使焊料凸點表面的氧化膜還原並去除的狀態下進行良好的焊接接合。助熔劑係在焊接接合後,透過溶液洗淨或離子蝕刻等之洗淨處理而被去除。
然而,近年來的焊料凸點構造之微細化係難以去除助熔劑。特別在焊料凸點的直徑或鄰接的焊料凸點間之間距間隔是數十μm以下程度時,變得難以充份地去除助熔劑。無法去除的助熔劑會產生助熔劑殘渣。助熔劑殘渣因為助熔劑所含的氯氣等之作用而有發生所稱在鄰接的電極構造(焊料凸點)間遷移的絕緣不良之虞。且最終對基板間充填底部充填用樹脂的工程中,會有因助熔劑殘渣而無法充份地充填底部充填用樹脂,導致產生所謂空穴的空隙之情況。
另一方面,在有關消除助熔劑殘渣之影響的方法上,實際上有使用藉由無助熔劑的焊接接合而省略洗淨處理的方法(免洗淨法)。具體而言,將甲酸等之羧酸蒸氣導入腔室內,藉由利用此羧酸還原焊料凸點表面的氧化膜,可在不使用助熔劑之下進行焊接接合(引用文獻1、2)。
然而,無助熔劑的焊接接合具有所謂容易產生基板彼此位置偏移的新問題。亦即,如同上述,在使用助熔劑的情況,透過介於複數個基板間的助熔劑而產生保持力(疊層力),利用此保持力防止基板彼此的位置偏移,相對地,在無助熔劑的焊接接合之情況,基板間未存在有助熔劑,無法對基板間賦予保持力(疊層力)。因此,在利用無助熔劑方式的焊接接合之免洗淨法中,基板間容易產生位置偏移,受限定於能適用免洗淨法的情況。特別是在透過基板上的焊料凸點將基板彼此焊接接合的情況,有需要1~2μm左右的定位精度之情況,因而難以適用易產生位置偏移的免洗淨法。又,同樣的問題亦可能發生在共晶接合的情況。再者,位置偏移不僅是基板接合的場合,在將焊接材固定於基板上而形成焊料凸點等的情況亦成為問題。
專利文獻1:特開平11-233934號公報
專利文獻2:特開2001-244618號公報
本發明係解決上述習知技術的問題點。亦即,本發明係提供一種接合構造體製造方法及製造系統,雖然在透過熱熔融材將複數個被接合構件彼此接合而製造接合構造體之際可省略洗淨處理,但仍可減輕複數個被接合構件間之位置偏移。
又,本發明係提供一種在將焊接材加熱熔融處理以進行焊料凸點等之焊料成形的情況中可減輕焊料成形的位置偏移之加熱熔融處理裝置及加熱熔融處理系統。
(1)本發明的接合構造體製造方法,係透過熱熔融材將複數個被接合構件間接合以製造接合構造體的接合構造體製造方法,其特徵為具有:準備在前述複數個被接合構件的至少一方形成有熱熔融材的被接合構件之準備階段;在前述複數個被接合構件相互對向的面上塗布有機劑,透過該有機劑將複數個被接合構件間暫時接合的暫時接合階段;將前述熱熔融材熔融而透過該熱熔融材將複數個被接合構件間接合的接合階段;及在前述接合階段前或之後,藉由加熱使前述有機劑蒸發的蒸發階段。
(2)本發明的接合構造體製造系統,係透過熱熔融材接合複數個被接合構件間而製造接合構造體之接合構造體製造系統,其特徵為具有:在前述複數個被接合構件的至少一方之形成有熱熔融材的被接合構件上塗布非還原性的有機劑、即暫時接合劑的塗布手段;在透過前述暫時接合劑疊層的狀態下,加熱已暫時接合的前述複數個被接合構件之加熱手段;及對前述複數個被接合構件供給羧酸蒸氣的供給手段,且前述加熱手段係一邊在前述熱熔融材熔融前或前述熱熔融材熔融中使前述暫時接合劑蒸發,一邊為了在含有前述羧酸蒸氣的環境中以無助熔劑方式進行接合而加熱前述被接合構件。
(3)本發明的加熱熔融處理方法,係加熱焊接材所附著的構件而將焊接材加熱熔融處理以成形焊料的加熱熔融處理方法,其特徵為具有:使焊接材附著於前述構件上並將有機劑塗布於構件的表面,透過該有機劑將前述焊接材暫時接合的暫時接合階段;在前述焊接材熔融前或前述焊接材熔融中使前述有機劑蒸發的蒸發階段;及將前述焊接材熔融以成形焊料的成形階段。
(4)本發明的加熱熔融處理系統,係加熱焊接材所附著的構件而將焊接材加熱熔融處理以成形焊料的加熱熔融處理系統,其特徵為具有:使焊接材附著於前述構件上且為了將焊接材暫時接合而將有機劑塗布於構件的表面之塗布手段;將透過前述暫時接合劑而暫時接合有焊接材的構件加熱之加熱手段;及對前述構件供給羧酸蒸氣的供給手段,且前述加熱手段係一邊在前述焊接材熔融前或前述焊接材熔融中使前述暫時接合劑蒸發,一邊為了在含有前述羧酸蒸氣的環境中以無助熔劑方式進行接合而加熱前述被接合構件。
依據本發明,在將複數個被接合構件彼此焊接接合以製造接合構造體之際,雖然是可省略洗淨處理的情況,但仍可減輕複數個被接合構件間的位置偏移。且在成形焊料之際亦可減輕焊接材的位置偏移。
以下,一邊參照附圖的圖面,一邊說明本發明的實施形態。此外,圖面說明中相同要素賦予相同符號,省略重複說明。且為說明方便,會有圖面之尺寸比例較為誇張而與實際的比例不同的情況。
本發明的接合構造體製造技術係有關透過加熱熔融構件(焊料或嵌入金屬等)將複數個被接合構件間接合(特別是焊接接合或共晶接合)以製造接合構造體的技術。
本發明的第1實施形態之接合構造體製造技術係有關將複數個被接合構件間焊接接合或共晶接合以製造接合構造體的技術。此接合構造體製造技術係可使用於機械的焊接接合,較佳為焊接接合基板彼此、晶片彼此、或基板和晶片的技術,係藉由將一對基板的電極構造彼此、晶片的電極構造彼此、及基板的電極構造和晶片的電極構造焊接接合而電性連接者。
此外,基板可以是印刷基板等有機基板,亦可為矽基板或化合物半導體基板等之半導體基板或電介體基板。且晶片可以是半導體晶片或電介體晶片。以下,茲以透過焊料凸點將半導體基板彼此接合的情況為例作說明。
以本實施形態之接合構造體製造技術而言,係在複數個半導體基板上形成含有焊料凸點等之電極構造後,於半導體基板上塗布有機劑,藉該有機劑將基板間暫時接合。然後,在腔室內使該有機劑在焊料熔融前或焊料熔融中蒸發而進行焊接接合。
特別是在本實施形態中,雖然是採用將羧酸導入於腔室內而還原焊料的氧化膜之依據無助熔劑的焊接接合之免洗淨法,在基板投入於腔室內之前,將非助熔劑的有機劑,也就是將屬非還原性的有機劑之暫時接合劑塗布於基板以將基板間暫時接合。如此,不是藉助熔劑而是藉由對基板間賦予保持力(疊層力)用的專用暫時接合劑來防止基板的位置偏移,且在藉羧酸進行氧化膜的還原處理前或與還原處理同時地使暫時接合劑蒸發,之後,將基板彼此接合。
藉由以上那樣的構成,雖然是省略洗淨處理,但本發明仍可減輕複數個被接合構件間的位置偏移。
第1圖顯示本實施形態之接合構造體製造系統的概略構成圖。
接合構造體製造系統1係將基板彼此等予以接合的基板焊合系統。製造系統1大致區分具有暫時接合裝置20及焊料熔融裝置30。
暫時接合裝置20具有分配器21及校正機構22。分配器21係在形成有焊料凸點等焊料的基板面上塗布非還原性的有機劑、即暫時接合劑的塗布手段。有機劑的塗布係可在基板表面的一面上呈面狀塗布,亦可呈點狀地離散塗布,但本實施形態中是呈面狀塗布。校正機構22係以夾入所塗布的暫時接合劑的方式使複數個基板對向而進行基板間電極構造彼此的對位,且將基板彼此暫時接合的定位手段。這樣的暫時接合裝置20除了要塗布的有機劑是非助熔劑以外,其他的係與稱為倒裝晶片接合的裝置共通,故省略詳細說明。
另一方面,焊料熔融裝置30具有腔室31、羧酸供給部32、及腔室內31的加熱器33。將藉由暫時接合裝置20暫時接合的狀態之基板搬入腔室31。供給部32以規定的時序對腔室31供給羧酸蒸氣。但亦可視情況不在腔室31內而是在開放環境下作處理。
供給部32具有羧酸蒸氣的供給系34、及以規定的時序開閉的閥35。供給系34係將如氫、一氧化碳那樣的還原性氣體,或是如同氮氣那樣的非氧化性氣體等之載氣混合於羧酸蒸氣並導入腔室31內者。供給系34具有:例如收容著羧酸液體的密閉容器36、及透過閥37以供給載氣的載氣供給管38。載氣供給管38係在密閉容器36內產生氣泡(起泡)。然而,供給部32只要是可將羧酸供給至腔室31內者即可,亦可作成不同於本實施形態的構成。
茲針對加熱器33作說明。加熱器33係設在腔室31內的加熱手段。加熱器33為,在焊料熔融前或焊料熔融中使暫時接合劑蒸發,同時為了在含羧酸蒸氣的環境中進行加熱處理且藉無助熔劑方式作焊接接合而加熱屬被接合構件的基板。特別是,加熱器33係在藉羧酸進行焊料的氧化膜之還原處理前或與還原處理同時地使暫時接合劑蒸發。此外,為防止基板的位置偏移,雖以在焊料熔融前不讓所有的暫時接合劑蒸發者較佳,但暫時接合劑殘留過多時,無法讓焊料表面暴露於羧酸蒸氣而造成難以進行氧化膜的還原處理。因此,從還原處理的觀點,以在焊料熔融前使暫時接合劑蒸發者較佳。
此外,焊料熔融裝置30係具有排氣用的排氣幫浦39,及設置或安裝於排氣幫浦39的吸氣或排氣側,用以回收氣化後的羧酸之羧酸回收部(回收機構)40。羧酸回收部40可以是安裝於排氣幫浦39的吸氣側或排氣側之過濾器,也可以是安裝於排氣側的洗滌器。又,焊料熔融裝置30係透過閥42而連接用以將內部置換(淨化)成氮氣環境的氮氣供給管41。
以上那樣建構的焊料熔融裝置30,係腔室內被搬入有透過暫時接合劑而被暫時接合的基板。且以在焊料熔融前,特別是在藉羧酸進行焊料的氧化膜之還原處理前或與還原處理同時地使暫時接合劑蒸發的方式,因應暫時接合劑的種類利用供給部32進行羧酸蒸氣之供給和利用加熱器33進行加熱。除該等點之外,由於細微的構成與一般的焊料熔融裝置之構成相同,所以省略詳細說明。
此外,為了在暫時接合裝置20和焊料熔融裝置30之間收付基板,亦可設置搬送機器人等。
其次,針對本實施形態的利用接合構造體製造系統的接合構造體製造方法,亦即焊合方法作說明。
首先,如第2圖所示,準備在表面形成有焊料凸點的基板50a、50b(以下,總括地總稱為基板50)。此處的基板50是半導體基板。基板50係具有半導體的基板本體51和該基板本體51上的電極構造。具體而言,在半導體的基板本體51之上具有銅柱52、銅柱52上的阻擋層53、以及形成在阻擋層53上的焊料凸點54。銅柱52係以銅(Cu)或銅合金作成的第1突起部。阻擋層53係用以防止焊料成份在焊料凸點54熔融時擴散於銅柱52側的底部阻擋金屬。例如,阻擋層53係從基板本體51側以鎳(Ni)、鈀(Pd)及金(Au)的順序疊層而成的Ni/Pd/Au疊層層。此外,在第2圖的情況,設置有作為電極部的銅柱52(第1突起部),電極部未受限於突起的形態,又,材質亦不限為銅或銅合金。
焊料凸點54係由不含鉛(Pb)的Sn-Ag(錫-銀)焊料等之無鉛焊料、Pb-Sn焊料等之含鉛焊料,或其他的焊料所形成。此外,焊料凸點54的形成自體與習知的電鍍形成的焊料凸點54之形成技術相同,因而省略詳細說明。此外,亦可不同於本實施形態,採用共晶接合用的嵌入金屬來取代焊料凸點54。在此,所謂的共晶接合,係指於處理溫度中2種以上的物質因相互擴散而產生物質移動,使合金化反應進行而完成接合者。係屬在接合面間使嵌入金屬等暫時地熔融、熔化後,利用擴散使之等溫凝固並接合的液相擴散接合的一種,是針對液化而利用共晶反應的接合方法。
所準備的一對半導體基板50雙方皆可作成第2圖所示那樣的構成,但未受此所限。例如,一方的基板50a作成具有第1電極部(例如,銅柱)52、阻擋層53及焊料凸點54的基板,而在另一方的基板50b中,可作成如第3圖、第4圖所示省略了焊料凸點54的基板(第3圖)。再者,在另一方的基板50b中可省略焊料凸點54和阻擋層53(第4圖)。特別是在另一方的基板50b中省略焊料凸點54和阻擋層53雙方並於第2電極部(銅柱52)直接焊接接合的情況,減輕基板製造負擔。本實施形態中,由於可藉羧酸充份地進行還原處理,所以即便是省略一方基板50b中的阻擋層或焊料凸點,仍可在第2電極部直接地焊接接合。
此外,本實施形態的接合構造體製造技術可適當運用於:以鄰接的焊料凸點間是150μm以下的間距間隔設置複數個直徑100μm以下的焊料凸點的基板50。然而,基板50未受限於該情況。
其次,如第5圖所示,在基板50上塗布暫時接合劑55。暫時接合劑55被塗布在複數個基板50a、50b相互對向的面(以下,稱為「接合面」)上。接合面係與形成有焊料凸點54等電極構造之側的面對應。暫時接合劑可被塗布在複數個基板50a、50b雙方的接合面,但亦可僅塗布在一方的基板50a之接合面。即便僅一方的基板50a之接合面被塗布,藉由和另一方的基板50b接觸,一對基板50a、50b之間係成為存在有暫時接合劑,可對基板50a、50b間賦予保持力(疊層力)。
本實施形態中,暫時接合劑55呈面狀塗布於被接合構件、即基板50上。透過這樣呈面狀均一地塗布,保持力(疊層力)係提高。本實施形態中的暫時接合劑55係非助熔劑的有機劑、即非還原性的有機劑。亦即,本實施形態中,無關乎是以無助熔劑方式焊接接合,係在基板50的接合面上塗布賦予基板間保持力(疊層力)用的暫時接合劑55來取代助熔劑。之所以非還原性的有機劑較佳,原因在於:在萬一有殘留有機劑的殘渣之情況可用以防止發生所謂遷移的絕緣不良。亦即,在暫時接合劑55方面,以不含有對基板造成不良影響的氯氣等之成份者較佳。
暫時接合劑55可包含有機劑、黏度調整劑(減黏液)。此乃用以調整黏度。暫時接合劑55的黏度以100~100000(30℃ mPa‧S)的範圍較佳,而1600~66000(30℃ mPa‧S)的範圍更好。原因在於:若黏度過高,塗布變困難,反之若黏度過低,則基板間的保持力(疊層力)低,無法充份獲得暫時接合效果之緣故。
又,作為暫時接合劑55,如同後述,係選擇在腔室31內加熱基板50之際會在焊料凸點54熔融前(到達焊料的熔點前)蒸發的材料。特別是,暫時接合劑55係選擇會在藉羧酸蒸氣進行焊料的氧化膜之還原處理前或與該還原處理並行地蒸發的材料。具體而言,暫時接合劑55的沸點係依據焊料的氧化膜之還原處理前及還原處理時之腔室31內的壓力、及還原處理之際的基板溫度作設定。就腔室31內的壓力來看,本實施形態中,在還原處理前或還原處理時,腔室31內係設為壓力1×102至1×105Pa中的任一壓力者較佳。這樣的範圍較佳之原因為:當壓力變得比1×102Pa還低時,例如會有因暫時接合劑55的暴沸而使基板偏移的情況,而在1×105Pa以上時會導致成為大氣壓以上之緣故。又,就基板溫度的範圍來看,關於還原處理之際的基板溫度範圍,以100℃至350℃者較佳。這樣的溫度範圍較佳之原因為:還原處理所用的羧酸、即甲酸等在成為350℃左右時會開始分解,故設為350℃以下者較佳,但依焊料的種類而異,亦有因為羧酸蒸氣而在100℃左右就被還原處理者的緣故。當考慮以上那樣的壓力範圍和基板溫度範圍時,作為暫時接合劑55,可說在壓力1×102至1×105Pa中的任一壓力下具有100℃至350℃的沸點者較佳。此外,一般而言,可因應焊料材料的種類,靈活使用會在還原處理前或還原處理時(一般是在焊料熔融前或焊料熔融中)蒸發的有機劑之種類。具體而言,Pb-5Sb焊料的熔點為314℃且所採用的焊接接合溫度為330℃~350℃左右。而Sn-3‧5Ag焊料的熔點為221℃且所採用的焊接接合溫度為230℃~250℃左右。此外,亦存在有比Sn-3‧5Ag焊料還低熔點的焊料。因此,亦可因應此等焊料材料的種類來選擇暫時接合劑5。
具體而言,依據實驗的結果,暫時接合劑55係以具有選自異冰片基環己酮、萜品醇及丙二醇苯基醚中至少1個之非還原性的有機劑者較佳。異冰片基環己酮(MTPH)係黏度65500(30℃ mPa‧S),且沸點是308℃(5%)313℃(15%)。萜品醇(一般俗名 萜品醇成份係含有主成份的α-萜品醇、異性體β-、γ-萜品醇等萜品醇類97%以上)係黏度比異冰片基環己酮(MTPH)低,沸點是213~223℃。又,丙二醇苯基醚係黏度22‧7(25℃ mPa‧S),且沸點是243℃(760mmHg)。特別在是Sn-Ag的情況,以異冰片基環己酮(MTPH)較佳。
又,作為黏度調整劑,可從黏度比上述的異冰片基環己酮、萜品醇、及丙二醇苯基醚還低者中作適宜地選擇。例如,作為黏度調整劑,可使用2,4-二乙基-1,5-戊二醇(C9H20O2)。於有機物的原液添加黏度調整劑的比例係可適宜地選擇,能設為0~90重量%。
此外,亦可使用含有彼此沸點不同之複數種非還原性的有機劑的暫時接合劑55。在該情況,因為至少一部份的暫時接合劑成份會比其他的暫時接合劑成份還早蒸發,使得在已蒸發的暫時接合劑成份存在的部分,早期暴露焊料凸點的表面,使還原處理開始而早期焊接接合。另一方面,由於暫時接合劑不會一次全部蒸發,故能在較廣的溫度範圍維持暫時接合效果,藉以提高防止位置偏移之效果。例如,做成一部份的暫時接合劑成份在焊料熔融前蒸發,而其他的暫時接合劑成份在焊料熔融中蒸發,可將混合有該等成份者作為暫時接合劑55使用。
接著,在塗布暫時接合劑55之後,藉由校正機構22以夾入暫時接合劑55的方式使複數個基板50a、50b對向且對齊基板50a、50b彼此的位置,使基板50a、50b彼此對上。該結果為,藉由暫時接合劑55對基板50a、50b間賦予保持力(疊層力),使基板50a、50b彼此暫時接合。
接著,如第6圖所示,該已暫時接合的狀態的基板50a、50b被搬入於腔室31內。在腔室31內,基板50a、50b係透過例如托架(未圖示)而配置於加熱器33上。此外,第6圖中顯示一對基板50a、50b,但亦可將一次複數對的基板或複數對的晶片、複數組的基板和晶片等當作被接合構件搬入。
其次,在第7圖所示那樣的溫度條件及真空度條件下進行處理。首先,如第7圖所示,藉由幫浦39對腔室31內進行真空排氣,迄至例如10~50Pa左右為止。此外,真空排氣的程度未受限於10~50Pa左右,可適宜地調整。接著在真空排氣處理之後或與真空排氣處理並行地藉加熱器33加熱基板50a、50b而使基板溫度昇溫。
接著,將羧酸蒸氣導入腔室31內。透過羧酸蒸氣之供給,腔室31內成為100~10000Pa左右。較佳為,至少在基板50a、50b的溫度到達焊料的熔點前導入羧酸蒸氣。例如,在焊料是Sn-3‧5Ag(熔點221℃)的情況,會加熱到適於焊合的230℃~250℃左右,但大約在200℃以上,基於羧酸的還原效果變強而開始還原處理。在是Pb-5Sn(熔點314℃)的情況,會加熱到適於焊合的330℃~350℃左右,但在250℃以上,基於羧酸的還原效果變強而開始還原處理。
此外,在本實施形態中,在藉羧酸蒸氣進行焊料的氧化膜之還原處理前或與該還原處理並行地使暫時接合劑55蒸發。亦即,在焊料是Sn-3‧5Ag的情況,在200℃前後,例如180℃~250℃前後進行還原處理,在230℃~250℃左右被焊接接合,但暫時接合劑55係在該還原處理前或與該還原處理並行地蒸發。同樣地,在焊料是Pb-5Sn的情況,在250℃前後,例如220℃~350℃前後進行還原處理,在330℃~350℃左右被焊接接合,但暫時接合劑55係在該還原處理前或與該還原處理並行地蒸發。在使用其他材料的焊料的情況中亦是在藉羧酸蒸氣進行焊料的氧化膜之還原處理前或與該還原處理並行地使暫時接合劑55蒸發。此外,如第7圖所示,迄至10~50Pa左右的真空排氣係使暫時接合劑55容易蒸發。亦即,為使暫時接合劑55容易蒸發,暫時地提高腔室31內的真空度是有效用的。
如第8圖所示,隨著暫時接合劑55徐徐地蒸發,焊料凸點54遂徐徐地暴露於羧酸蒸氣。該結果為,焊料凸點54表面的氧化膜被還原。
此際,在暫時接合劑55方面,亦可使用含有彼此不同沸點之複數種非還原性的有機劑者。在該情況,至少一部份的暫時接合劑成份比其他的暫時接合劑成份還早蒸發。在該已提早蒸發的暫時接合劑成份所存在的部分提早開始還原處理,另一方面,因沸點之差異,所有暫時接合劑的成份不會一次蒸發,因而能在較廣的溫度範圍維持暫時接合效果。
接著,如第9圖所示以無助熔劑方式進行焊接接合。亦可在焊料凸點54熔融前使暫時接合劑55一部份或全部蒸發,亦可在焊料凸點54熔融中使暫時接合劑55蒸發。從防止位置偏移的觀點,以在焊料凸點54熔融中才開始讓暫時接合劑55蒸發者較佳,從焊料凸點54的表面可早期接觸羧酸蒸氣地使之暴露以充份地還原處理的觀點,以在焊料凸點54熔融前讓暫時接合劑的一部份或全部蒸發者較佳。具體而言,係暫時接合劑55的至少一部份蒸發並使焊料凸點54暴露,在該暴露部分的氧化膜被還原去除。此外,即使在焊料凸點54熔融前暫時接合劑55就完全地蒸發,亦能進行無位置偏移的焊接接合。然後,基板50a、50b的溫度在焊接接合溫度(例如,在焊料是Sn-3‧5Ag的情況,230℃~250℃左右),在該部分焊料熔融並被焊合(焊接接合)。暫時接合劑55完全地蒸發使焊料凸點54完全暴露以進行還原處理並透過使焊料充份地熔融焊接接合完全完成時,完成焊合處理(迴焊)。只要是藉暫時接合劑55可防止大幅度的位置偏移,則後頭可藉焊料的表面張力之作用進行自我校正(自我對齊)以修正位置偏移。在焊料54熔融中讓暫時接合劑55蒸發的情況,可維持暫時接合效果迄至因產生焊料54熔融而產生焊合效果為止。又,即使是在焊料54熔融前讓暫時接合劑55蒸發的情況,由於從暫時接合劑55完全地蒸發成為沒有暫時接合效果開始迄至焊合處理完成為止之間的時間變短,故可防止或減輕基板50a、50b的位置偏移。
焊合處理(迴焊)後,開始使基板溫度降溫,同時藉由排氣幫浦39使羧酸蒸氣排氣。羧酸回收部(回收機構)40係回收氣化後的羧酸。之後,在藉由從氮氣供給管41導入的氮氣等之氣體將腔室31內部進行置換(淨化)後,取出焊接接合完成的接合構造體,亦即完成焊接接合的基板50。
其次,如第10圖所示,焊接接合階段後,針對所取出之完成焊接接合的基板50,朝複數個基板50a和基板50b之間充填底部充填用樹脂56。原因在於:提高完成焊接接合的基板50之貼附強度並作保護。此時,在基板50a和50b之間的有機劑(暫時接合劑)既已蒸發並被去除。因此,不同於採用助熔劑的通常焊接接合之情況,有機劑實質上不存在於基板50a和50b之間,即便洗淨亦不殘留殘渣。該結果為,防止在基板間充填底部充填用樹脂的工程中,底部充填用樹脂因殘渣而無法充份地充填所導致產生所謂空穴的空隙之事態。且基板間未殘留有機劑(暫時接合劑),就算有殘留微量的暫時接合劑,由於暫時接合劑不是松香系的還原性的有機劑而是非還原性的有機劑,故亦防止發生所謂遷移之絕緣不良。
如同後述之實施例所示,利用本實施形態的技術,即使在形成有具備數十μm左右的直徑及間距的焊料凸點之基板的接合中,亦能以低於2μm的位置偏移進行無助熔劑方式的焊接接合。
以上已針對本發明的第1實施形態之接合構造體製造技術作了說明,但本發明未受限於該情況,可適宜地變更。
例如,溫度條件及真空度條件未受限於第7圖所示者。例如,為縮短處理時間,以如同第7圖那樣從基板投入迄至迴焊為止讓基板溫度單純增加者較佳,但未受此所限。例如,亦可作成在基板溫度到達焊接接合溫度前,將基板溫度保持在比焊接接合溫度低50~80℃左右的溫度一定時間的期間,藉以進行還原處理。且亦可作成將加熱器33的溫度保持一定,且於此加熱器33上將基板50a、50b搬入搬出,藉以控制基板的溫度。
依據本實施形態,可獲得以下那樣的效果。
(1)由於有機劑55是在焊料54熔融前或焊料54熔融中蒸發,所以在焊接接合後不需進行用以將有機劑55去除的洗淨。因此有機劑55的殘渣不殘留,特別是在將基板50a的電極構造和基板50b的電極構造焊接接合之際,不會產生遷移或其他的污染。又,在將底部充填用樹脂充填於間隙的工程中,可防止因有機物的殘渣使底部充填用樹脂無法充份地充填而導致產生空穴的情況。
(2)由於有機劑55的殘渣不殘留,故亦可用於特別是焊料凸點54的直徑及鄰接焊料凸點間的間距為數十μm以下,特別是具有數μm以下的微細構造之基板的焊接接合。
(3)特別是,使用屬非還原性的有機劑之暫時接合劑55作為有機劑以無助熔劑方式進行焊接接合。因此,係無助熔劑方式的焊接接合且可利用暫時接合劑55將保持力(疊層力)賦予基板,可防止位置偏移。又,就算萬一殘存微量的暫時接合劑,也和助熔劑的情況不同,不會產生遷移或其他的污染。
(4)特別是,由於是在藉羧酸蒸氣進行焊料54的氧化膜之還原處理前或與該還原處理並行地使暫時接合劑蒸發,所以隨著暫時接合劑55徐徐地蒸發,焊料凸點54遂徐徐地暴露於羧酸蒸氣。因此,暫時接合劑55防止基板50a、50b的位置偏移且沒有妨礙羧酸蒸氣進行還原處理的情況。此外,即使暫時接合劑55在焊料凸點54熔融前完全地蒸發,亦可在沒有位置偏移下進行焊接接合。亦即,在基板搬入時防止位置偏移,並藉焊料凸點54熔融所引起的焊料表面張力之作用而自我校正(自我對齊)以修正位置偏移。
(5)透過以暫時接合劑55容易蒸發的方式暫時地提高腔室31內的真空度,使具有微細構造(52,53,54)的基板50a、50b所包夾之暫時接合劑55變得更容易蒸發。
(6)由於暫時接合劑55在壓力1×102至1×105Pa中的任一壓力下具有100℃至350℃的沸點,所以在還原處理之時間點或迄至還原處理前,暫時接合劑55係殘存並賦予保持力,但不妨礙還原處理。
(7)由於暫時接合劑55係選自異冰片基環己酮、萜品醇、及丙二醇苯基醚中至少1個之非還原性的有機劑,所以在還原處理之時間點或迄至還原處理前,暫時接合劑係殘存並賦予保持力,但不妨礙還原處理。且不含成為遷移或其他污染原因的物質。而且黏度適當,可賦予足夠的保持力(疊層力)。
(8)在暫時接合劑55是包含彼此沸點不同之複數種非還原性的有機劑的情況,透過至少一部份的暫時接合劑成份比其他的暫時接合劑成份還早蒸發,使得在該已蒸發的暫時接合劑成份存在的部分可早期開始還原處理。另一方面,由於暫時接合劑不會一次全部蒸發,所以能在較廣的溫度範圍維持暫時接合效果,藉以提高防止位置偏移的效果。
(9)由於暫時接合劑55係以黏度調整劑稀釋成黏度1×102至1×105mPa‧s,故可防止所謂黏度過高無法塗布的情況,並防止所謂黏度過低使基板的保持力過小的情況。
(10)特別在將直徑100μm以下的焊料凸點54以鄰接的凸點間之間距間隔是150μm以下作配置那樣的基板之接合中是有效用的。
(11)本實施形態中,雖然是使用焊料凸點54的類型,但利用羧酸蒸氣仍可充份地還原氧化膜,所以針對一對基板50a、50b中的一片,省略阻擋層53及焊料凸點54,僅形成銅柱(由銅作成的第2突起部)52,可直接地焊接接合。藉此,可減輕基板50b的製造負擔。
(12)本實施形態中,暫時接合劑55在基板50上被塗布成面狀,所以暫時接合劑55的量變多,保持力(疊層力)提高。
其次,針對本發明的第2實施形態作說明。上述的第1實施形態係說明了在基板上將暫時接合劑塗布成面狀的情況。然而,第2實施形態中,暫時接合劑在複數個部位呈點狀塗布。除了這點以外,本實施形態的接合構造體製造技術係和第1實施形態的情況相同,所以和第1實施形態中的構件相同的構件在本實施形態中是使用相同的構件編號,故省略詳細說明。
本實施形態之第1圖所示的暫時接合裝置20中,分配器21係在形成有焊料凸點等之焊料的基板面,將非還原性的有機劑、即暫時接合劑呈離散地點狀塗布。
第11圖顯示使暫時接合劑55離散地呈點狀塗布的情況之一例。第11圖(a)係基板50a的上視圖,第11圖(b)係表示將基板50a、50b暫時接合的狀態。
在第11圖所示的情況中,矩形狀基板(晶片)的4個角落處分別塗布點狀的暫時接合劑55。在塗布助熔劑的情況,在以還原並去除因助熔劑所導致之焊料表面的氧化膜為主要目的之關係上,不得不將助熔劑塗布成和焊料表面接觸。然而,在本實施形態中,焊料54表面的氧化膜之還原是藉由羧酸蒸氣進行,所以暫時接合劑55只要是對基板間賦予保持力(疊層力)者就足夠。因此,不需將暫時接合劑55塗布成和焊料54表面接觸。因此,如第11圖所示,亦可將暫時接合劑55塗布成不和焊料54表面接觸。
此外,暫時接合劑55的種類、溫度條件、真空度條件、羧酸氣體、焊料凸點徑及間距尺寸等係與第1實施形態的情況相同。
即使是使這樣的暫時接合劑55呈點狀離散地塗布的情況,仍可抑制基板50a、50b的位置偏移且以無助熔劑方式焊接接合。而且,因為是使暫時接合劑55呈點狀離散地塗布,故易讓暫時接合劑55蒸發。特別是能以不和焊料表面接觸的方式塗布暫時接合劑55,因而暫時接合劑55變得難以進入鄰接的焊料凸點54間之間隙,而容易蒸發去除。
再者,只要是藉暫時接合的作用可防止焊料凸點54的位置自電極構造(銅柱、阻擋層、對象基板的焊料凸點等)的位置脫離,則就算是產生小幅度的位置偏移,仍可藉焊料凸點54熔融所導致之焊料的表面張力之作用自我校正(自我對齊)而修正位置偏移。特別在暫時接合劑54的量少的本實施形態中,自我校正的效果高。
此外,在上述的說明中,已針對呈點狀(spot)塗布暫時接合劑55的情況作說明,但本實施形態未受限於該情況,亦可將暫時接合劑55塗布成線狀(line)。又,不只是在複數個部位離散地塗布,亦可將暫時接合劑55塗布成1點的點狀或1條的線狀。
依據本實施形態,除了上述的第1實施形態中的(1)~(12)之效果外,還可獲得如次的效果。
(13)可賦予基板足夠的保持力(疊層力),並可使暫時接合劑呈點狀離散地塗布,故易讓暫時接合劑蒸發。
(14)特別是在以不和焊料表面接觸的方式塗布暫時接合劑的情況,暫時接合劑變得難以進入焊料凸點彼此的間隙,而容易蒸發去除。
在上述的第1、第2實施形態中,在暫時接合劑55方面,係說明了將非助熔劑的有機劑,也就是將屬非還原性的有機劑之暫時接合劑塗布於基板而將基板間暫時接合的情況。
的確,在所謂即使是微量的暫時接合劑55無法蒸發而殘存的情況亦不產生遷移或其他的污染的意味中,作為暫時接合劑55,宜使用非還原性的有機劑而非助熔劑,但本發明未受限於該情況。
亦即,依據本發明,在透過有機劑將複數個被接合構件間暫時接合之後,會在焊料熔融前讓有機劑蒸發,所以即使採用助熔劑作為有機劑,亦不需在焊接接合後藉溶液洗淨或離子蝕刻等之洗淨處理去除助熔劑的工程。因此,例如,即使焊料凸點54的直徑或鄰接的焊料凸點間之間距間隔是數十μm以下程度的情況,亦不需在意所謂助熔劑難以去除的問題。因此,依據本發明,就算使用了助熔劑,但因為在焊接接合後不會產生助熔劑殘渣,故可防止發生所謂遷移之絕緣不良。又,在最終對基板間充填底部充填用樹脂56的工程中,亦可防止因助熔劑殘渣使底部充填用樹脂56無法充份地充填而造成產生所謂空穴的空隙之情況。
如以上所述,依據本發明,只要是以包夾在複數個基板50a、50b之間的方式塗布有機劑,透過該有機劑將複數個基板間暫時接合,加熱已暫時接合的複數個被接合構件,在焊料熔融前或焊料熔融中使有機劑蒸發,在腔室31內熔融焊料而透過該焊料將複數個基板間焊接接合者,可廣泛應用。
其次針對本發明的第4實施形態作說明。
上述的第1~第3實施形態中,已針對基板接合技術作了說明,但本發明亦可應用在焊料成形的技術。亦即,本實施形態係有關在焊接材54b所附著的構件、即基板50a上形成焊料凸點的加熱熔融處理方法。
使焊接材54b附著於基板50a(構件)上,且於基板50a的表面塗布有機劑、即暫時接合劑55,而透過暫時接合劑(有機劑)55將焊接材54b的位置暫時接合。然後,在焊接材54b熔融前或焊接材54b熔融中使暫時接合劑55蒸發。然後,熔融焊接材54b而成形焊料凸點54。該情況亦防止焊接材54b的位置偏移。
為了這樣的處理,遂提供加熱熔融處理系統。該系統與第1圖的系統相同。係加熱焊接材54b所附著的構件而將焊接材54b加熱熔融處理以成形焊料的加熱熔融處理系統。此外具有:使焊接材54b附著於構件上且為將焊接材54b暫時接合而於構件的表面塗布有機劑的暫時接合裝置20;將透過暫時接合劑而暫時接合有焊接材的構件加熱的加熱手段(焊料熔融裝置30);以及對前述構件供給羧酸蒸氣的供給手段,加熱手段係一邊在前述焊接材熔融前或前述焊接材熔融中使前述暫時接合劑蒸發,一邊為在含有前述羧酸蒸氣的環境中以無助熔劑方式成形焊料而加熱前述構件。
此外,除以上各點以外,其餘與第1~第3實施形態的情況相同,故省略詳細說明。
準備在矽基板(5mm四方形、25mm四方形)上形成有銅製的銅柱52、和銅柱52上的阻擋層(Ni/Pd/Au)53及形成於阻擋層53上的Sn-Ag焊料凸點54而成的基板50a、50b。上述的基板50a、50b準備了一對。此外,使用了焊料凸點54的直徑是100微米,鄰接的焊料凸點間之間距(中心間的距離)是250微米者。
以黏度調整劑(2,4-二乙基-1,5-戊二醇)將異冰片基環己酮稀釋以製成暫時接合劑。此時,在黏度調整劑的比例是0重量%、30重量%、50重量%、70重量%、90重量%之情況下分別實施。使暫時接合劑55以面狀塗布在一對上述基板50a、50b。接著,在第7圖所示的處理條件中,於甲酸環境中作還原處理並以無助熔劑方式作焊接接合。
該結果為,在基板50a、50b無位置偏移之下良好地完成焊接接合。
另一方面,作為比較例,在氮氣環境中作處理的情況,雖無位置偏移,但焊料的接合部分未良好地成形。
使用了焊料凸點54的直徑是20微米,鄰接的焊料凸點間之間距(中心間的距離)是40微米者。其他的條件係與上述第1實施例相同。該情況下之基板50a、50b的位置偏移成為2μm以下,良好地完成焊接接合。
在與上述的第1實施例相同的基板中,使用以黏度調整劑(2,4-二乙基-1,5-戊二醇)將萜品醇稀釋所製成的暫時接合劑進行暫時接合。在黏度調整劑的比例設為0重量%、30重量%、50重量%、70重量%、90重量%的情況下分別作實施。該情況亦同第1實施例,位置偏移少,良好地完成焊接接合。但是,成品率比第1實施例的情況稍低。
在與上述的第2實施例相同的基板中,使用以黏度調整劑(2,4-二乙基-1,5-戊二醇)將萜品醇稀釋製成的暫時接合劑進行暫時接合。該情況亦同第2實施例,位置偏移少,良好地完成焊接接合。但是,成品率比第2實施例的情況差。
在與上述的第1實施例相同的基板中,使用以黏度調整劑(2,4-二乙基-1,5-戊二醇)將丙二醇苯基醚稀釋製成的暫時接合劑進行暫時接合。在黏度調整劑的比例設為0重量%、30重量%、50重量%、70重量%、90重量%的情況下分別作實施。該情況亦位置偏移少,良好地完成焊接接合。但是,成品率比第1實施例及第3實施例的情況差。
在與上述的第2實施例相同的基板中,使用以黏度調整劑(2,4-二乙基-1,5-戊二醇)將丙二醇苯基醚稀釋製成的暫時接合劑進行暫時接合。該情況亦同第2實施例,位置偏移少,良好地完成焊接接合。但是,成品率比第2實施例及第4實施例的情況差。
在與上述的第1實施例相同的基板中,將相同的暫時接合劑在4個部位(4點)中呈點狀離散地塗布。此時,利用藉暫時接合劑進行暫時接合作用來減輕位置偏移,完成焊接接合。此外,本實施例中,亦試著實驗在焊接接合前之時間點,基板50a、50b間產生20μm左右之小幅度的位置偏移之樣本,但了解到只要是利用暫時接合作用可防止大幅度的位置偏移,則可透過焊料凸點54熔融所引起的焊料表面張力之作用來自我校正(自我對齊)以解消位置偏移。因此,實際上,藉由將暫時接合劑離散地塗布,儘管在將複數個基板彼此焊接接合以製造焊合基板之際可省略洗淨處理,但仍可減輕複數個基板間的位置偏移。
在與上述的第2實施例相同的基板中,將相同的暫時接合劑於4個部位呈點狀離散地塗布。該情況亦減輕複數個基板間的位置偏移。
在與第1實施例相同的基板中,以黏度調整劑(2,4-二乙基-1,5-戊二醇)將萜品醇稀釋成0%~90重量%所製成的暫時接合劑,在4個部位呈點狀離散地塗布。又,在和第2實施例相同的基板上亦同樣地,將暫時接合劑在4個部位呈點狀離散地塗布。此等亦可減輕複數個基板間的位置偏移,是可實用的水準。
在與第1實施例相同的基板中,以黏度調整劑(2,4-二乙基-1,5-戊二醇)將丙二醇苯基醚稀釋成0~90重量%所製成的暫時接合劑,在4個部位呈點狀離散地塗布。又,在和第2實施例相同的基板上亦同樣地將暫時接合劑在4個部位呈點狀離散地塗布。此等亦可減輕複數個基板間的位置偏移,是可實用的水準。
以上,已針對本發明的好適實施形態作了說明,但本發明未受限於該等情況,可在未脫離申請專利範圍之範圍下進行追加、刪除、變更等。上述的說明中雖已針對把一對半導體基板當作接合構造體為例作了說明,但作為本發明的對象之接合構造體當然包含各種完成焊接接合的基板、完成焊接接合的晶片(完成倒裝晶片接合的晶片等)、及以已接合基板和晶片者等。又,在上述的說明中,雖說明了在焊料方面主要是使用焊料凸點,但本發明未受限於該情況。
本申請係依據2010年6月28日申請之日本特許申請第2010-146337號、及2010年7月23日申請之日本特許申請第2010-166448號,且參照其揭示內容,整體納入說明書中。
1‧‧‧接合構造體製造系統
20‧‧‧暫時接合裝置
21‧‧‧分配器
22‧‧‧校正機構
30‧‧‧焊料熔融裝置
31‧‧‧腔室
32‧‧‧羧酸供給部
33‧‧‧加熱器
34‧‧‧供給系
35‧‧‧閥
36‧‧‧密閉容器
37‧‧‧透過閥
38‧‧‧載氣供給管
39‧‧‧排氣幫浦
40‧‧‧羧酸回收部
41‧‧‧氮氣供給管
50(50a、50b)‧‧‧基板
51‧‧‧基板本體
52‧‧‧銅柱
53‧‧‧阻檔層
54‧‧‧焊料凸點
54b‧‧‧焊接材
55‧‧‧暫時接合劑
56‧‧‧底部充填用樹脂
第1圖係本發明的第1實施形態之接合構造體製造系統的概略構成圖。
第2圖係顯示本發明的第1實施形態的接合構造體製造方法所使用之一基板例的圖。
第3圖係顯示不同於第2圖的基板之第1例的圖。
第4圖係顯示不同於第2圖的基板之第2例的圖。
第5圖係針對本發明的第1實施形態的第2圖之基板的後續工程的圖。
第6圖係本發明的第1實施形態的第5圖之後續工程的圖。
第7圖係本發明的第1實施形態的溫度條件及真空度條件的圖。
第8圖係本發明的第1實施形態的第6圖之後續工程的圖。
第9圖係本發明的第1實施形態的第8圖之後續工程的圖。
第10圖係本發明的第1實施形態的第9圖之後續工程的圖。
第11圖係顯示本發明的第2實施形態的暫時接合劑之塗布例的圖。
第12圖係顯示本發明的第4實施形態的加熱熔融處理的圖。
30...焊料熔融裝置
32...羧酸供給部
33...加熱器
34...供給系
35...閥
36...密閉容器
38...載氧供給管
39...排氣幫浦
40...羧酸回收部(回收機構)
41...氮氣供給管
50a、50b...基板
51...基板本體
52...銅柱
53...阻檔層
54...焊料凸點
55...暫時接合劑
Claims (23)
- 一種接合構造體之製造方法,係透過將加熱熔融材料置入複數個被接合構件間而接合,以製造接合構造體的接合構造體之製造方法,其特徵為,是種製造方法具有下列步驟:在所述複數個被接合構件的至少一面形成加熱熔融材料的被接合構件之準備步驟;在所述複數個被接合構件相對的面上塗布暫時接合劑,透過該暫時接合劑將複數個被接合構件間暫時接合的暫時接合步驟;藉由在腔室內以含有羧酸蒸氣環境中的加熱處理,將所述加熱熔融材料熔融而透過該加熱熔融材料將複數個被接合構件間接合的接合步驟;及在所述接合步驟前或之後或跨過整個接合步驟,藉由加熱使所述暫時接合劑蒸發的蒸發步驟,其中,所述蒸發步驟中,係使所述暫時接合劑容易蒸發,而將所述腔室中的真空度暫時地予以提高。
- 如申請專利範圍第1項之接合構造體之製造方法,其係在透過將加熱熔融材料置入複數個被接合構件間而接合,以製造接合構造體的接合構造體之製造方法中,具有下列步驟:在所述複數個被接合構件的至少一面形成有 加熱熔融材料的被接合構件之準備步驟;在所述複數個被接合構件相對的面上塗布所述暫時接合劑,透過該暫時接合劑將複數個被接合構件間暫時接合的暫時接合步驟;加熱已暫時接合的複數個被接合構件,以於所述加熱熔融材料熔融前或所述加熱熔融材料熔融中使所述暫時接合劑蒸發的蒸發步驟;及熔融所述加熱熔融材料並透過該加熱熔融材料而將複數個被接合構件間接合的接合步驟。
- 如申請專利範圍第2項之接合構造體之製造方法,其中所述加熱熔融材料係焊接材或共晶接合材,所述接合步驟係將複數個被接合構件間作焊接接合或共晶接合。
- 如申請專利範圍第2或3項之接合構造體之製造方法,其中所述接合步驟係將設置在所述複數個被接合構件中的一面之被接合構件的電極構造,和設置在另一面的被接合構件之電極構造作電性連接。
- 如申請專利範圍第2項之接合構造體之製造方法,其中在使所述暫時接合劑全部蒸發之後,於所述接合步驟中將所述加熱熔融材料熔融。
- 如申請專利範圍第5項之接合構造體之製造方法,其中所述暫時接合步驟係塗布作為所述暫時接合劑的一非還原性有機劑之暫時接合劑; 所述接合步驟係在含有羧酸蒸氣的環境中作加熱處理,利用無助熔劑作焊接接合或共晶接合。
- 如申請專利範圍第6項之接合構造體之製造方法,其具有對腔室中供給所述羧酸蒸氣的供給步驟,所述接合步驟係在所述腔室內進行。
- 如申請專利範圍第5項之接合構造體之製造方法,其中:在所述接合步驟前,先供給所述羧酸蒸氣;所述蒸發步驟係在藉所述羧酸蒸氣進行所述加熱熔融材料的氧化膜之還原處理前,或與該還原處理並行地使所述暫時接合劑蒸發。
- 如申請專利範圍第6項之接合構造體之製造方法,其中所述蒸發步驟係在所述加熱熔融材料熔融前使所述暫時接合劑蒸發。
- 如申請專利範圍第5項之接合構造體之製造方法,其中在所述接合步驟之後,在未進行洗淨去除所述暫時接合劑之作業下對所述複數個被接合構件間充填底部充填用樹脂。
- 如申請專利範圍第6項之接合構造體之製造方法,其中所述暫時接合劑在壓力1×102至1×105Pa中的任一壓力下具有100℃至350℃的沸點。
- 如申請專利範圍第6項之接合構造體之製造方法,其中所述暫時接合劑係選自異冰片基環己酮、萜品醇、及丙二醇苯基醚中的至少1個之非 還原性有機劑。
- 如申請專利範圍第6項之接合構造體之製造方法,其中所述暫時接合劑係包含彼此沸點不同的複數種非還原性的有機劑。
- 如申請專利範圍第6項之接合構造體之製造方法,其中所述暫時接合劑係以黏度調整劑稀釋成黏度1×102至1×105mPa‧s。
- 如申請專利範圍第6項之接合構造體之製造方法,其中形成於所述複數個被接合構件的至少一面的焊料,係直徑100μm以下的焊料凸點,且鄰接的焊料凸點間之間距間隔是150μm以下。
- 如申請專利範圍第6項之接合構造體之製造方法,其中所述暫時接合步驟係在所述被接合構件上將所述暫時接合劑塗布成點狀或線狀。
- 如申請專利範圍第16項之接合構造體之製造方法,其中所述暫時接合步驟係在所述被接合構件上,於複數個部位離散地塗布所述暫時接合劑。
- 如申請專利範圍第16項之接合構造體之製造方法,其中所述暫時接合劑係與前述焊料的表面分離地塗布於前述被接合構件上。
- 如申請專利範圍第6項之接合構造體之製造方法,其中所述暫時接合步驟係將前述暫時接合劑以面狀塗布在前述被接合構件上。
- 如申請專利範圍第4項之接合構造體之製造方 法,其中:設置於所述複數個被接合構件的一面之電極構造係由第一電極層、形成在所述第一電極部上之阻擋層、以及形成在所述阻擋層上的焊料凸點構成;設置於所述複數個被接合構件的另一面之電極構造係由第二電極層構成;並透過焊接接合,使所述焊料凸點和所述第二電極層接合。
- 一種接合構造體之製造系統,係透過加熱熔融材料接合複數個被接合構件間而製造接合構造體之接合構造體之製造系統,其特徵為,是種製造系統具有下列機構:在所述複數個被接合構件的至少一面所形成具有加熱熔融材料的被接合構件上塗布非還原性的有機劑、即暫時接合劑的塗布手段;在透過所述暫時接合劑疊層的狀態下,加熱已暫時接合的所述複數個被接合構件之加熱手段;以及在腔室內對所述複數個被接合構件供給羧酸蒸氣的供給手段;而所述加熱手段係一邊在所述加熱熔融材料熔融前或所述加熱熔融材料熔融中,為了使所述暫時接合劑容易蒸發,所述腔室內的真空度乃暫時 地予以提高,而使所述暫時接合劑蒸發,一邊為了在含有所述羧酸蒸氣的環境中以無助熔劑方式進行接合而加熱所述被接合構件。
- 一種加熱熔融處理方法,係將加熱熔融材料所附著的構件加熱而將加熱熔融材料加熱熔融處理,以成形加熱熔融材料的加熱熔融處理方法,其特徵為,是種加熱熔融處理方法具有下列步驟:使加熱熔融材料附著於所述構件上,並將暫時接合劑塗布於構件的表面,透過該暫時接合劑將所述加熱熔融材料暫時接合的暫時接合步驟;藉由在腔室內以含有羧酸蒸氣環境中的加熱處理,在所述加熱熔融材料熔融前或所述加熱熔融材料熔融中使所述暫時接合劑蒸發的蒸發步驟;及將所述加熱熔融材料熔融以形成加熱熔融材料的成形步驟,其中,在所述蒸發步驟,為了使所述暫時接合劑容易蒸發而將所述腔室中的真空度暫時地予以提高。
- 一種加熱熔融處理系統,係將加熱熔融材料所附著的構件加熱而將加熱熔融材料加熱熔融處理以成形加熱熔融材料的加熱熔融處理系統,其特徵為,是種加熱熔融處理系統具有下列機構:使加熱熔融材料附著於所述構件上且為了將 加熱熔融材料暫時接合而將暫時接合劑塗布於構件的表面之塗布手段;將透過所述暫時接合劑而暫時接合有加熱熔融材料的構件加熱之加熱手段;及於腔室內對所述構件供給羧酸蒸氣的供給手段,而所述加熱手段係一邊在所述加熱熔融材料熔融前或所述加熱熔融材料熔融中,為了使所述暫時接合劑容易蒸發而將所述腔室中的真空度暫時地予以提高,而在腔室中使所述暫時接合劑蒸發,一邊為了在含有所述羧酸蒸氣的環境中以無助熔劑方式成形加熱熔融材料而加熱所述被接合構件。
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2011
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- 2011-06-24 US US13/806,907 patent/US8757474B2/en active Active
- 2011-06-24 WO PCT/JP2011/064532 patent/WO2012002273A1/ja active Application Filing
- 2011-06-24 CN CN201180031174.9A patent/CN102960077B/zh active Active
- 2011-06-24 EP EP11800738.4A patent/EP2587900B1/en active Active
- 2011-06-28 TW TW100122568A patent/TWI548317B/zh active
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2014
- 2014-05-12 US US14/275,153 patent/US9119336B2/en active Active
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2015
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Also Published As
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CN102960077B (zh) | 2017-12-29 |
US20140246481A1 (en) | 2014-09-04 |
JP5807221B2 (ja) | 2015-11-10 |
TW201212762A (en) | 2012-03-16 |
JP2012033518A (ja) | 2012-02-16 |
US8757474B2 (en) | 2014-06-24 |
WO2012002273A1 (ja) | 2012-01-05 |
EP2587900B1 (en) | 2019-04-24 |
US20130105558A1 (en) | 2013-05-02 |
CN102960077A (zh) | 2013-03-06 |
US9119336B2 (en) | 2015-08-25 |
KR101805147B1 (ko) | 2017-12-05 |
KR20130087407A (ko) | 2013-08-06 |
EP2587900A4 (en) | 2015-10-28 |
US20150314385A1 (en) | 2015-11-05 |
EP2587900A1 (en) | 2013-05-01 |
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