TWI456354B - 照明光學系統、曝光裝置以及元件製造方法 - Google Patents

照明光學系統、曝光裝置以及元件製造方法 Download PDF

Info

Publication number
TWI456354B
TWI456354B TW097137747A TW97137747A TWI456354B TW I456354 B TWI456354 B TW I456354B TW 097137747 A TW097137747 A TW 097137747A TW 97137747 A TW97137747 A TW 97137747A TW I456354 B TWI456354 B TW I456354B
Authority
TW
Taiwan
Prior art keywords
light
illumination
optical system
illumination optical
intensity distribution
Prior art date
Application number
TW097137747A
Other languages
English (en)
Other versions
TW200919115A (en
Inventor
田中裕久
Original Assignee
尼康股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 尼康股份有限公司 filed Critical 尼康股份有限公司
Publication of TW200919115A publication Critical patent/TW200919115A/zh
Application granted granted Critical
Publication of TWI456354B publication Critical patent/TWI456354B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70108—Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Microscoopes, Condenser (AREA)

Claims (16)

  1. 一種照明光學系統，為一種利用由光源所供給的照明光而對被照射面進行照明之照明光學系統，包括：空間光調製器，配置在前述照明光學系統的光路內；偵測部，具有接受前述照明光的一部分之受光面，並在由前述光源朝向前述空間光調製器的光路內的位置，檢測前述照明光的光强度分布；控制部，使用前述偵測部所偵測之前述照明光的光强度分布，對前述空間光調製器進行控制；以及分布形成光學系統，使經由前述空間光調製器的光，在前述照明光學系統的光瞳位置或與該光瞳位置成光學共軛的位置，以所需的光强度分布來分布。
  2. 如申請專利範圍第1項所述的照明光學系統，其中，前述偵測部對在前述受光面上的前述照明光的位置進行偵測；前述控制部使用關於在前述受光面之前述照明光的前述位置的資訊，對前述空間光調製器進行控制。
  3. 如申請專利範圍第1項或第2項所述的照明光學系統，其中，前述偵測部具有對入射至前述空間光調製器的照明光向前述空間光調製器之入射角進行偵測的入射角偵測部；前述控制部使用關於前述入射角偵測部所偵測的前述入射角的資訊，對前述空間光調製器進行控制。
  4. 如申請專利範圍第1項所述的照明光學系統，更包括：光束分裂器，從來自由前述光源向前述空間光調製器之行進於前述光路的前述照明光，分出一部分照明光，並導向前述偵測部。
  5. 如申請專利範圍第1項或第2項所述的照明光學系統，其中，具有資訊取得部，用於取得關於在前述照明光學系統的光瞳位置或與該光瞳位置成光學共軛之位置的光强度分布的資訊；前述控制部使用前述資訊取得部所取得之在前述照明光學系統的光瞳位置或與該光瞳位置成光學共軛之位置的光强度分布以及前述偵測部所偵測的前述照明光的光強度分布，對前述控制部的控制進行修正。
  6. 如申請專利範圍第5項所述的照明光學系統，其中，具有光路分支構件，其配置在前述空間光調製器和前述被照射面之間的前述照明光學系統的光路內，且從該光路的前述照明光分出一部分的照明光並導向前述資訊取得部。
  7. 如申請專利範圍第5項所述的照明光學系統，其中，前述資訊取得部使用通過了前述被照射面的前述照明光，取得關於在前述照明光學系統的光瞳位置或與該光瞳位置成光學共軛的位置的光强度分布之資訊。
  8. 如申請專利範圍第3項所述的照明光學系統，其中， 具有資訊取得部，用於取得關於在前述照明光學系統的光瞳位置或與該光瞳位置成光學共軛之位置的光强度分布的資訊；前述控制部使用前述資訊取得部所取得之在前述照明光學系統的光瞳位置或與該光瞳位置成光學共軛之位置的光强度分布以及前述偵測部所偵測的前述照明光的光強度分布，對前述控制部的控制進行修正。
  9. 如申請專利範圍第1項或第2項所述的照明光學系統，其中，前述空間光調製器具有二維排列的多個元件，前述多個元件為了對入射的光賦予空間光調製並射出，可彼此獨立地進行控制。
  10. 如申請專利範圍第9項所述的照明光學系統，其中，前述多個元件分別具有反射面，前述多個元件的前述反射面為了對入射的光賦予空間的光調製並射出，可彼此獨立地進行控制。
  11. 如申請專利範圍第1項或第2項所述的照明光學系統，其中，前述照明光包括多個脈衝光；前述偵測部的前述受光面在前述多個脈衝光中的1個以上脈衝光的每一次，接受根據前述脈衝光所形成之前述照明光的前述光强度分布；前述控制部使用關於在前述1個以上脈衝光的每一次 所偵測之多個前述照明光的前述光强度分布的資訊，對前述空間光調製器進行控制。
  12. 如申請專利範圍第1項或第2項所述的照明光學系統，其中，前述空間光調製器包括：第1空間光調製器，與前述一部分的光學系統協動，在前述照明光學系統的前述光瞳位置或與前述光瞳位置成光學共軛的前述位置處形成第1光强度分布；以及第2空間光調製器，與前述一部分的光學系統協動，在前述照明光學系統的前述光瞳位置或與前述光瞳位置成光學共軛的前述位置處形成第2光强度分布。
  13. 如申請專利範圍第12項所述的照明光學系統，其中，還具有分割導光構件，配置在前述光源和前述空間光調製器之間的光路中，用於將來自前述光源的前述照明光進行分割並導向前述第1及第2空間光調製器。
  14. 如申請專利範圍第13項所述的照明光學系統，其中，前述偵測部對由前述光源朝向前述分割導光構件的光路內的位置處之前述照明光的前述光强度分布進行偵測。
  15. 一種曝光裝置，為一種在感光性基板上轉印規定的圖案之曝光裝置，具有用於對被照射面上所配置的前述圖案進行照明之如申請專利範圍第1項至第14項中任一項所述的照明光學系統。
  16. 一種元件的製造方法，包括，利用申請專利範圍第15項所述的曝光裝置，將規定 的圖案在感光性基板上進行曝光，並使轉印了前述圖案的前述感光性基板顯像，將與前述圖案相對應之形狀的光罩層形成在前述感光性基板的表面上，且通過前述光罩層對前述感光性基板的表面進行加工。
TW097137747A 2007-10-16 2008-10-01 照明光學系統、曝光裝置以及元件製造方法 TWI456354B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007269188 2007-10-16
JP2008173244 2008-07-02

Publications (2)

Publication Number Publication Date
TW200919115A TW200919115A (en) 2009-05-01
TWI456354B true TWI456354B (zh) 2014-10-11

Family

ID=40138389

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097137747A TWI456354B (zh) 2007-10-16 2008-10-01 照明光學系統、曝光裝置以及元件製造方法

Country Status (9)

Country Link
US (1) US8520291B2 (zh)
EP (1) EP2179329A1 (zh)
JP (1) JP5287114B2 (zh)
KR (1) KR101546987B1 (zh)
CN (1) CN101681125B (zh)
HK (1) HK1139745A1 (zh)
SG (2) SG185313A1 (zh)
TW (1) TWI456354B (zh)
WO (1) WO2009050977A1 (zh)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8451427B2 (en) 2007-09-14 2013-05-28 Nikon Corporation Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method
JP5267029B2 (ja) * 2007-10-12 2013-08-21 株式会社ニコン 照明光学装置、露光装置及びデバイスの製造方法
SG185313A1 (en) 2007-10-16 2012-11-29 Nikon Corp Illumination optical system, exposure apparatus, and device manufacturing method
WO2009050976A1 (en) 2007-10-16 2009-04-23 Nikon Corporation Illumination optical system, exposure apparatus, and device manufacturing method
US8379187B2 (en) 2007-10-24 2013-02-19 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9116346B2 (en) 2007-11-06 2015-08-25 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
NL1036334A1 (nl) * 2007-12-28 2009-06-30 Asml Netherlands Bv Slm calibration.
WO2009128293A1 (ja) * 2008-04-14 2009-10-22 株式会社ニコン 空間光変調ユニット、照明光学系、露光装置、およびデバイス製造方法
JP5360057B2 (ja) * 2008-05-28 2013-12-04 株式会社ニコン 空間光変調器の検査装置および検査方法、照明光学系、照明光学系の調整方法、露光装置、およびデバイス製造方法
WO2010024106A1 (ja) * 2008-08-28 2010-03-04 株式会社ニコン 照明光学系、露光装置、およびデバイス製造方法
DE102009008644A1 (de) 2009-02-12 2010-11-18 Carl Zeiss Smt Ag Abbildende Optik sowie Projektionsbelichtungsanlage für die Mikrolithografie mit einer derartigen abbildenden Optik
CN102804069B (zh) * 2009-06-17 2014-10-22 Asml荷兰有限公司 光刻设备和方法
WO2011078070A1 (ja) 2009-12-23 2011-06-30 株式会社ニコン 空間光変調ユニット、照明光学系、露光装置、およびデバイス製造方法
KR102046286B1 (ko) * 2010-02-03 2019-11-18 가부시키가이샤 니콘 조명 광학 장치, 조명 방법, 및 노광 방법 및 장치
WO2011102109A1 (ja) * 2010-02-20 2011-08-25 株式会社ニコン 光源最適化方法、露光方法、デバイス製造方法、プログラム、露光装置、リソグラフィシステム、及び光源評価方法、並びに光源変調方法
US20110205519A1 (en) 2010-02-25 2011-08-25 Nikon Corporation Polarization converting unit, illumination optical system, exposure apparatus, and device manufacturing method
JP2012004465A (ja) 2010-06-19 2012-01-05 Nikon Corp 照明光学系、露光装置、およびデバイス製造方法
WO2012060099A1 (ja) * 2010-11-04 2012-05-10 株式会社ニコン 光源調整方法、露光方法、デバイス製造方法、照明光学系、及び露光装置
JP5807761B2 (ja) * 2011-06-06 2015-11-10 株式会社ニコン 照明方法、照明光学装置、及び露光装置
NL2008924A (en) * 2011-06-22 2013-01-02 Asml Netherlands Bv System and method to ensure source and image stability.
JP6103467B2 (ja) * 2011-10-06 2017-03-29 株式会社ニコン 照明光学系、照明方法、露光装置、露光方法、およびデバイス製造方法
JP6120001B2 (ja) * 2011-10-24 2017-04-26 株式会社ニコン 照明光学系、露光装置、およびデバイス製造方法
JP5918858B2 (ja) * 2011-11-15 2016-05-18 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置の光変調器及び照明系
DE102013201506A1 (de) 2012-02-17 2013-08-22 Carl Zeiss Smt Gmbh Optisches Bauelement
DE102013201509A1 (de) * 2012-02-17 2013-08-22 Carl Zeiss Smt Gmbh Optisches Bauelement
DE102012205181B4 (de) * 2012-03-30 2015-09-24 Carl Zeiss Smt Gmbh Messvorrichtung zum Vermessen einer Beleuchtungseigenschaft
DE102013214459B4 (de) * 2013-07-24 2015-07-16 Carl Zeiss Smt Gmbh Optisches System für eine mikrolithographische Projektionsbelichtungsanlage
JP6227347B2 (ja) * 2013-09-25 2017-11-08 株式会社Ｓｃｒｅｅｎホールディングス 露光装置、および、光学装置
EP2876499B1 (en) * 2013-11-22 2017-05-24 Carl Zeiss SMT GmbH Illumination system of a microlithographic projection exposure apparatus
CN111736162B (zh) * 2020-08-04 2020-11-10 中国人民解放军国防科技大学 一种针对复杂目标的激光照明回波探测装置及方法
CN112255818B (zh) * 2020-11-03 2022-06-03 广州立景创新科技有限公司 成像校正单元与成像模块
DE102021209734A1 (de) 2021-09-03 2022-09-22 Carl Zeiss Smt Gmbh Auskoppelvorrichtung, Verfahren zur Abzweigung einer äußeren Strahlung, Beleuchtungssysteme, Vorrichtung zur Bereitstellung und Weiterleitung einer Projektionsstrahlung für ein Beleuchtungssystem und Lithografiesystem

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200519410A (en) * 2003-11-20 2005-06-16 Nikon Corp Light beam converter, optical illuminating apparatus, exposure device, and exposure method
TW200527151A (en) * 2003-11-07 2005-08-16 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US20050219495A1 (en) * 2003-12-19 2005-10-06 Carl Zeiss Smt Ag Beam reshaping unit for an illumination system of a microlithographic projection exposure apparatus
US20060001855A1 (en) * 2004-06-30 2006-01-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20070165202A1 (en) * 2003-09-12 2007-07-19 Carl Zeiss Smt Ag Illumination system for a microlithography projection exposure installation

Family Cites Families (212)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1034333B (de) 1955-04-20 1958-07-17 Erwin W Wartenberg Verfahren zum Vorspannen von Glaesern durch Eintauchen der erhitzten Glaskoerper in Kuehlbaeder
EP0023231B1 (de) 1979-07-27 1982-08-11 Tabarelli, Werner, Dr. Optisches Lithographieverfahren und Einrichtung zum Kopieren eines Musters auf eine Halbleiterscheibe
FR2474708B1 (fr) 1980-01-24 1987-02-20 Dme Procede de microphotolithographie a haute resolution de traits
US4346164A (en) * 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
US4683420A (en) 1985-07-10 1987-07-28 Westinghouse Electric Corp. Acousto-optic system for testing high speed circuits
JP2527807B2 (ja) * 1989-05-09 1996-08-28 住友大阪セメント株式会社 光学的連想識別装置
US5153428A (en) * 1990-06-15 1992-10-06 Hamamatsu Photonics K.K. Confocal laser scanning microscope having relay lens and a slit for removing stray light
US5251222A (en) * 1991-04-01 1993-10-05 Teledyne Industries, Inc. Active multi-stage cavity sensor
JPH0513292A (ja) * 1991-07-02 1993-01-22 Nikon Corp 露光装置
US5229872A (en) * 1992-01-21 1993-07-20 Hughes Aircraft Company Exposure device including an electrically aligned electronic mask for micropatterning
US5312513A (en) * 1992-04-03 1994-05-17 Texas Instruments Incorporated Methods of forming multiple phase light modulators
US5383000A (en) * 1992-11-24 1995-01-17 General Signal Corporation Partial coherence varier for microlithographic system
US5461410A (en) * 1993-03-29 1995-10-24 Texas Instruments Incorporated Gray scale printing using spatial light modulators
US5815248A (en) * 1993-04-22 1998-09-29 Nikon Corporation Illumination optical apparatus and method having a wavefront splitter and an optical integrator
EP0656555B1 (en) 1993-12-01 2003-03-19 Sharp Kabushiki Kaisha Display for 3D images
US5850300A (en) * 1994-02-28 1998-12-15 Digital Optics Corporation Diffractive beam homogenizer having free-form fringes
US5815247A (en) 1995-09-21 1998-09-29 Siemens Aktiengesellschaft Avoidance of pattern shortening by using off axis illumination with dipole and polarizing apertures
DE19535392A1 (de) 1995-09-23 1997-03-27 Zeiss Carl Fa Radial polarisationsdrehende optische Anordnung und Mikrolithographie-Projektionsbelichtungsanlage damit
KR100505202B1 (ko) * 1995-09-27 2005-11-25 칼 짜이스 에스엠테 아게 줌장치
RU2084941C1 (ru) 1996-05-06 1997-07-20 Йелстаун Корпорейшн Н.В. Адаптивный оптический модуль
CN1244018C (zh) 1996-11-28 2006-03-01 株式会社尼康 曝光方法和曝光装置
JPH1116816A (ja) 1997-06-25 1999-01-22 Nikon Corp 投影露光装置、該装置を用いた露光方法、及び該装置を用いた回路デバイスの製造方法
JP4210871B2 (ja) 1997-10-31 2009-01-21 株式会社ニコン 露光装置
WO1999027568A1 (fr) 1997-11-21 1999-06-03 Nikon Corporation Graveur de motifs a projection et procede de sensibilisation a projection
WO1999031716A1 (fr) 1997-12-16 1999-06-24 Nikon Corporation Aligneur, methode d'exposition et procede de fabrication de ce dispositif
TW449672B (en) 1997-12-25 2001-08-11 Nippon Kogaku Kk Process and apparatus for manufacturing photomask and method of manufacturing the same
WO1999049366A1 (fr) 1998-03-20 1999-09-30 Nikon Corporation Photomasque et systeme d'exposition par projection
KR20010042133A (ko) 1998-03-26 2001-05-25 오노 시게오 노광방법, 노광장치, 포토마스크, 포토마스크의 제조방법,마이크로디바이스, 및 마이크로디바이스의 제조방법
WO1999066370A1 (fr) 1998-06-17 1999-12-23 Nikon Corporation Procede relatif a l'elaboration d'un masque
AU4930099A (en) 1998-08-18 2000-03-14 Nikon Corporation Illuminator and projection exposure apparatus
US6466304B1 (en) * 1998-10-22 2002-10-15 Asm Lithography B.V. Illumination device for projection system and method for fabricating
US6406148B1 (en) * 1998-12-31 2002-06-18 Texas Instruments Incorporated Electronic color switching in field sequential video displays
AU4143000A (en) 1999-04-28 2000-11-17 Nikon Corporation Exposure method and apparatus
WO2001003170A1 (fr) 1999-06-30 2001-01-11 Nikon Corporation Procede et dispositif d'exposition
DE10029938A1 (de) 1999-07-09 2001-07-05 Zeiss Carl Optisches System für das Vakuum-Ultraviolett
US6280034B1 (en) 1999-07-30 2001-08-28 Philips Electronics North America Corporation Efficient two-panel projection system employing complementary illumination
WO2001022480A1 (fr) 1999-09-20 2001-03-29 Nikon Corporation Mecanisme a attelages paralleles, systeme d'exposition et procede de fabrication, et procede de fabrication de dispositifs
KR100625625B1 (ko) 1999-10-07 2006-09-20 가부시키가이샤 니콘 기판, 스테이지 장치, 스테이지 구동 방법, 노광 장치 및노광 방법
EP1109067B1 (en) 1999-12-13 2006-05-24 ASML Netherlands B.V. Illuminator
JP2005233979A (ja) 2000-02-09 2005-09-02 Nikon Corp 反射屈折光学系
US7301605B2 (en) 2000-03-03 2007-11-27 Nikon Corporation Projection exposure apparatus and method, catadioptric optical system and manufacturing method of devices
GB0016453D0 (en) * 2000-07-04 2000-08-23 Hoffmann La Roche Pyrrole derivatives
EP1744193A1 (en) 2000-08-18 2007-01-17 Nikon Corporation Optical element holding device with drive mechanism allowing movement of the element along three coordinate axes
JP2002231619A (ja) 2000-11-29 2002-08-16 Nikon Corp 照明光学装置および該照明光学装置を備えた露光装置
SE0100336L (sv) * 2001-02-05 2002-08-06 Micronic Laser Systems Ab Adresseringsmetod och apparat som använder densamma tekniskt område
WO2002063664A1 (fr) 2001-02-06 2002-08-15 Nikon Corporation Systeme et procede d'exposition et procede de production de dispositif
JP4714403B2 (ja) 2001-02-27 2011-06-29 エーエスエムエル ユーエス，インコーポレイテッド デュアルレチクルイメージを露光する方法および装置
WO2002080185A1 (fr) 2001-03-28 2002-10-10 Nikon Corporation Dispositif a etages, dispositif d'exposition et procede de fabrication du dispositif
JP2002305140A (ja) 2001-04-06 2002-10-18 Nikon Corp 露光装置及び基板処理システム
WO2002084850A1 (fr) 2001-04-09 2002-10-24 Kabushiki Kaisha Yaskawa Denki Induit de moteur lineaire protege et moteur lineaire protege
JP4401060B2 (ja) 2001-06-01 2010-01-20 エーエスエムエル ネザーランズ ビー．ブイ． リトグラフ装置、およびデバイス製造方法
US7015491B2 (en) * 2001-06-01 2006-03-21 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby, control system
JPWO2002101804A1 (ja) 2001-06-11 2004-09-30 株式会社ニコン 露光装置及びデバイス製造方法、並びに温度安定化流路装置
WO2002103766A1 (fr) * 2001-06-13 2002-12-27 Nikon Corporation Procede et systeme d'exposition au balayage, et procede de production d'un dispositif associe
EP1280007B1 (en) 2001-07-24 2008-06-18 ASML Netherlands B.V. Imaging apparatus
JPWO2003023832A1 (ja) 2001-09-07 2004-12-24 株式会社ニコン 露光方法及び装置、並びにデバイス製造方法
US6819490B2 (en) * 2001-09-10 2004-11-16 Micronic Laser Systems Ab Homogenization of a spatially coherent radiation beam and printing and inspection, respectively, of a pattern on a workpiece
EP1300698B1 (en) 2001-10-01 2011-11-02 Sony Corporation Polarization selecting prism for a projection device
US6577379B1 (en) * 2001-11-05 2003-06-10 Micron Technology, Inc. Method and apparatus for shaping and/or orienting radiation irradiating a microlithographic substrate
US6900915B2 (en) * 2001-11-14 2005-05-31 Ricoh Company, Ltd. Light deflecting method and apparatus efficiently using a floating mirror
US6618185B2 (en) * 2001-11-28 2003-09-09 Micronic Laser Systems Ab Defective pixel compensation method
US6577429B1 (en) * 2002-01-15 2003-06-10 Eastman Kodak Company Laser projection display system
TW200302507A (en) 2002-01-21 2003-08-01 Nikon Corp Stage device and exposure device
AU2003211559A1 (en) * 2002-03-01 2003-09-16 Nikon Corporation Projection optical system adjustment method, prediction method, evaluation method, adjustment method, exposure method, exposure device, program, and device manufacturing method
DE10210899A1 (de) 2002-03-08 2003-09-18 Zeiss Carl Smt Ag Refraktives Projektionsobjektiv für Immersions-Lithographie
JPWO2003085708A1 (ja) 2002-04-09 2005-08-18 株式会社ニコン 露光方法及び露光装置、並びにデバイス製造方法
US6960035B2 (en) 2002-04-10 2005-11-01 Fuji Photo Film Co., Ltd. Laser apparatus, exposure head, exposure apparatus, and optical fiber connection method
WO2003085457A1 (fr) * 2002-04-10 2003-10-16 Fuji Photo Film Co., Ltd. Tete d'exposition, dispositif d'exposition et utilisation
US20050095749A1 (en) * 2002-04-29 2005-05-05 Mathias Krellmann Device for protecting a chip and method for operating a chip
JP4324957B2 (ja) * 2002-05-27 2009-09-02 株式会社ニコン 照明光学装置、露光装置および露光方法
DE60319462T2 (de) * 2002-06-11 2009-03-12 Asml Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung eines Artikels
JP3884996B2 (ja) * 2002-06-14 2007-02-21 キヤノン株式会社 投影光学系における保持装置、該保持装置による光学調整方法、該保持装置を有する露光装置、露光方法、デバイス製造方法
EP1395049A1 (en) 2002-09-02 2004-03-03 Sony International (Europe) GmbH Illumination unit for a projection system
US20050141583A1 (en) 2002-09-02 2005-06-30 Torbjorn Sandstrom Method and device for coherence reduction
JP2004111579A (ja) * 2002-09-17 2004-04-08 Canon Inc 露光方法及び装置
KR100480620B1 (ko) * 2002-09-19 2005-03-31 삼성전자주식회사 마이크로 미러 어레이를 구비한 노광 장치 및 이를 이용한노광 방법
US6958867B2 (en) 2002-09-30 2005-10-25 Fuji Photo Film Co., Ltd. Illumination optical system, exposure device using the illumination optical system, and exposure method
US6665119B1 (en) * 2002-10-15 2003-12-16 Eastman Kodak Company Wire grid polarizer
JP3953460B2 (ja) * 2002-11-12 2007-08-08 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ投影装置
US6844927B2 (en) 2002-11-27 2005-01-18 Kla-Tencor Technologies Corporation Apparatus and methods for removing optical abberations during an optical inspection
TWI281099B (en) * 2002-12-02 2007-05-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
TW200412617A (en) 2002-12-03 2004-07-16 Nikon Corp Optical illumination device, method for adjusting optical illumination device, exposure device and exposure method
DE10257766A1 (de) 2002-12-10 2004-07-15 Carl Zeiss Smt Ag Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage
US20040108973A1 (en) 2002-12-10 2004-06-10 Kiser David K. Apparatus for generating a number of color light components
TW200421444A (en) 2002-12-10 2004-10-16 Nippon Kogaku Kk Optical device and projecting exposure apparatus using such optical device
KR101036114B1 (ko) 2002-12-10 2011-05-23 가부시키가이샤 니콘 노광장치 및 노광방법, 디바이스 제조방법
JP4352874B2 (ja) 2002-12-10 2009-10-28 株式会社ニコン 露光装置及びデバイス製造方法
KR20110086130A (ko) 2002-12-10 2011-07-27 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
AU2003289272A1 (en) 2002-12-10 2004-06-30 Nikon Corporation Surface position detection apparatus, exposure method, and device porducing method
WO2004053951A1 (ja) 2002-12-10 2004-06-24 Nikon Corporation 露光方法及び露光装置並びにデバイス製造方法
SG150388A1 (en) 2002-12-10 2009-03-30 Nikon Corp Exposure apparatus and method for producing device
SG152063A1 (en) 2002-12-10 2009-05-29 Nikon Corp Exposure apparatus and method for producing device
WO2004053952A1 (ja) 2002-12-10 2004-06-24 Nikon Corporation 露光装置及びデバイス製造方法
KR101157002B1 (ko) 2002-12-10 2012-06-21 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US6891655B2 (en) 2003-01-02 2005-05-10 Micronic Laser Systems Ab High energy, low energy density, radiation-resistant optics used with micro-electromechanical devices
EP1583946B1 (en) * 2003-01-15 2006-11-08 Micronic Laser Systems Ab A method to detect a defective pixel
JP4280509B2 (ja) 2003-01-31 2009-06-17 キヤノン株式会社 投影露光用マスク、投影露光用マスクの製造方法、投影露光装置および投影露光方法
KR101562447B1 (ko) 2003-02-26 2015-10-21 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
SE0300516D0 (sv) 2003-02-28 2003-02-28 Micronic Laser Systems Ab SLM direct writer
KR101181688B1 (ko) 2003-03-25 2012-09-19 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
JP2004304135A (ja) * 2003-04-01 2004-10-28 Nikon Corp 露光装置、露光方法及びマイクロデバイスの製造方法
WO2004091079A1 (ja) 2003-04-07 2004-10-21 Kabushiki Kaisha Yaskawa Denki キャンド・リニアモータ電機子およびキャンド・リニアモータ
DE602004020200D1 (de) 2003-04-07 2009-05-07 Nippon Kogaku Kk Belichtungsgerät und verfahren zur herstellung einer vorrichtung
JPWO2004094940A1 (ja) 2003-04-23 2006-07-13 株式会社ニコン 干渉計システム、干渉計システムにおける信号処理方法、該信号処理方法を用いるステージ
US7095546B2 (en) * 2003-04-24 2006-08-22 Metconnex Canada Inc. Micro-electro-mechanical-system two dimensional mirror with articulated suspension structures for high fill factor arrays
TW200507055A (en) 2003-05-21 2005-02-16 Nikon Corp Polarized cancellation element, illumination device, exposure device, and exposure method
TWI503865B (zh) 2003-05-23 2015-10-11 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
TW201415536A (zh) 2003-05-23 2014-04-16 尼康股份有限公司 曝光方法及曝光裝置以及元件製造方法
KR20060009956A (ko) 2003-05-28 2006-02-01 가부시키가이샤 니콘 노광 방법, 노광 장치, 및 디바이스 제조 방법
DE10324477A1 (de) 2003-05-30 2004-12-30 Carl Zeiss Smt Ag Mikrolithographische Projektionsbelichtungsanlage
JPWO2004109780A1 (ja) 2003-06-04 2006-07-20 株式会社ニコン ステージ装置、固定方法、露光装置、露光方法、及びデバイスの製造方法
EP2216685B1 (en) 2003-06-19 2012-06-27 Nikon Corporation Exposure apparatus and device manufacturing method
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
EP2264531B1 (en) 2003-07-09 2013-01-16 Nikon Corporation Exposure apparatus and device manufacturing method
KR101296501B1 (ko) 2003-07-09 2013-08-13 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
WO2005008754A1 (ja) 2003-07-18 2005-01-27 Nikon Corporation フレア計測方法、露光方法、及びフレア計測用のマスク
KR101345020B1 (ko) 2003-08-29 2013-12-26 가부시키가이샤 니콘 액체회수장치, 노광장치, 노광방법 및 디바이스 제조방법
DE10343333A1 (de) 2003-09-12 2005-04-14 Carl Zeiss Smt Ag Beleuchtungssystem für eine Mikrolithographie-Projektionsbelichtungsanlage
JP4444920B2 (ja) 2003-09-19 2010-03-31 株式会社ニコン 露光装置及びデバイス製造方法
TW200521477A (en) 2003-09-25 2005-07-01 Matsushita Electric Ind Co Ltd Projector and projection method
JP2007506947A (ja) * 2003-09-26 2007-03-22 タイダール フォトニクス，インク． 強化されたスペクトル測定システムに関する装置および方法
WO2005036619A1 (ja) 2003-10-09 2005-04-21 Nikon Corporation 照明光学装置、露光装置および露光方法
WO2005036620A1 (ja) 2003-10-10 2005-04-21 Nikon Corporation 露光方法及び露光装置、並びにデバイス製造方法
TW201834020A (zh) * 2003-10-28 2018-09-16 日商尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造方法
KR101121260B1 (ko) 2003-10-28 2012-03-23 가부시키가이샤 니콘 노광 장치, 노광 방법, 및 디바이스의 제조 방법
US7148952B2 (en) * 2003-10-31 2006-12-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4631707B2 (ja) 2003-11-13 2011-02-16 株式会社ニコン 照明装置、露光装置、露光方法及びデバイスの製造方法
JPWO2005048325A1 (ja) 2003-11-17 2007-11-29 株式会社ニコン ステージ駆動方法及びステージ装置並びに露光装置
KR101119813B1 (ko) 2003-12-15 2012-03-06 가부시키가이샤 니콘 스테이지 장치, 노광 장치, 및 노광 방법
DE602004027162D1 (de) 2004-01-05 2010-06-24 Nippon Kogaku Kk Belichtungsvorrichtung, belichtungsverfahren und bauelementeherstellungsverfahren
JP4319189B2 (ja) 2004-01-26 2009-08-26 株式会社ニコン 露光装置及びデバイス製造方法
US7580559B2 (en) * 2004-01-29 2009-08-25 Asml Holding N.V. System and method for calibrating a spatial light modulator
JP4506674B2 (ja) 2004-02-03 2010-07-21 株式会社ニコン 露光装置及びデバイス製造方法
TW201809727A (zh) * 2004-02-06 2018-03-16 日商尼康股份有限公司 偏光變換元件
US7557900B2 (en) 2004-02-10 2009-07-07 Nikon Corporation Exposure apparatus, device manufacturing method, maintenance method, and exposure method
US20050231731A1 (en) * 2004-02-18 2005-10-20 The Usa As Represented By The Administrator Of The National Aeronautics And Space Administration Systems and methods for fabricating thin films
WO2005081291A1 (ja) 2004-02-19 2005-09-01 Nikon Corporation 露光装置及びデバイスの製造方法
WO2005081292A1 (ja) 2004-02-20 2005-09-01 Nikon Corporation 露光装置、供給方法及び回収方法、露光方法、ならびにデバイス製造方法
JP4693088B2 (ja) 2004-02-20 2011-06-01 株式会社ニコン 照明光学装置、露光装置、および露光方法
WO2005083512A2 (de) 2004-02-26 2005-09-09 Carl Zeiss Smt Ag Beleuchtungssystem für eine mikrolithographie-projektionsbelichtungsanlage
US6977718B1 (en) * 2004-03-02 2005-12-20 Advanced Micro Devices, Inc. Lithography method and system with adjustable reflector
JP2005309380A (ja) * 2004-03-26 2005-11-04 Fuji Photo Film Co Ltd 画像露光装置
US7153616B2 (en) * 2004-03-31 2006-12-26 Asml Holding N.V. System and method for verifying and controlling the performance of a maskless lithography tool
JP2005302825A (ja) * 2004-04-07 2005-10-27 Canon Inc 露光装置
KR101330370B1 (ko) 2004-04-19 2013-11-15 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US7123348B2 (en) * 2004-06-08 2006-10-17 Asml Netherlands B.V Lithographic apparatus and method utilizing dose control
US7116403B2 (en) 2004-06-28 2006-10-03 Asml Netherlands B.V Lithographic apparatus and device manufacturing method
US7283209B2 (en) * 2004-07-09 2007-10-16 Carl Zeiss Smt Ag Illumination system for microlithography
US7259827B2 (en) * 2004-07-14 2007-08-21 Asml Netherlands B.V. Diffuser unit, lithographic apparatus, method for homogenizing a beam of radiation, a device manufacturing method and device manufactured thereby
DE102004035489A1 (de) * 2004-07-19 2006-02-16 Jenoptik Laser, Optik, Systeme Gmbh Optisches System zur Umwandlung einer primären Intensitätsverteilung in eine vorgegebene, raumwinkelabhängige Intensitätsverteilung
JP2006054328A (ja) * 2004-08-12 2006-02-23 Nikon Corp 照明光学装置、露光装置及びマイクロデバイスの製造方法
JP4599936B2 (ja) * 2004-08-17 2010-12-15 株式会社ニコン 照明光学装置、照明光学装置の調整方法、露光装置、および露光方法
JP4983257B2 (ja) 2004-08-18 2012-07-25 株式会社ニコン 露光装置、デバイス製造方法、計測部材、及び計測方法
CN101015039B (zh) 2004-09-17 2010-09-01 尼康股份有限公司 曝光用基板、曝光方法及元件制造方法
GB2419208A (en) * 2004-10-18 2006-04-19 Qinetiq Ltd Optical correlation employing an optical bit delay
US7177012B2 (en) * 2004-10-18 2007-02-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2006051909A1 (ja) 2004-11-11 2006-05-18 Nikon Corporation 露光方法、デバイス製造方法、及び基板
US7333177B2 (en) * 2004-11-30 2008-02-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060138349A1 (en) 2004-12-27 2006-06-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1837895B1 (en) * 2004-12-27 2016-02-24 Nikon Corporation Optical integrator, illumination optical apparatus, exposure apparatus, exposure method, and device manufacturing method
TWI453796B (zh) * 2005-01-21 2014-09-21 尼康股份有限公司 偏光變更單元以及元件製造方法
JP2006208432A (ja) * 2005-01-25 2006-08-10 Fuji Photo Film Co Ltd 露光方法および装置
JP4858439B2 (ja) * 2005-01-25 2012-01-18 株式会社ニコン 露光装置及び露光方法並びにマイクロデバイスの製造方法
KR100664325B1 (ko) 2005-02-04 2007-01-04 삼성전자주식회사 광 터널 및 이를 포함하는 프로젝션 장치
JP2006216917A (ja) * 2005-02-07 2006-08-17 Canon Inc 照明光学系、露光装置およびデバイス製造方法
JPWO2006085626A1 (ja) 2005-02-14 2008-06-26 株式会社ニコン 露光方法及び装置、並びにデバイス製造方法
WO2006085524A1 (ja) 2005-02-14 2006-08-17 Nikon Corporation 露光装置
JP5125503B2 (ja) 2005-03-23 2013-01-23 コニカミノルタホールディングス株式会社 有機ｅｌ素子の製造方法
JP4561425B2 (ja) * 2005-03-24 2010-10-13 ソニー株式会社 ホログラム記録再生装置およびホログラム記録再生方法
US7317506B2 (en) * 2005-03-29 2008-01-08 Asml Netherlands B.V. Variable illumination source
US7548302B2 (en) * 2005-03-29 2009-06-16 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2006303193A (ja) * 2005-04-20 2006-11-02 Canon Inc 露光装置、較正方法、およびデバイス製造方法
US7400382B2 (en) * 2005-04-28 2008-07-15 Asml Holding N.V. Light patterning device using tilting mirrors in a superpixel form
JP4230525B2 (ja) 2005-05-12 2009-02-25 有限会社テクノドリーム二十一 ３次元形状計測方法およびその装置
JP4771753B2 (ja) 2005-06-08 2011-09-14 新光電気工業株式会社 面光源制御装置および面光源制御方法
CN100526992C (zh) * 2005-07-01 2009-08-12 株式会社尼康 曝光装置、曝光方法及设备制造方法
DE102005030839A1 (de) 2005-07-01 2007-01-11 Carl Zeiss Smt Ag Projektionsbelichtungsanlage mit einer Mehrzahl von Projektionsobjektiven
WO2007055237A1 (ja) 2005-11-09 2007-05-18 Nikon Corporation 露光装置及び露光方法、並びにデバイス製造方法
JP2007150295A (ja) * 2005-11-10 2007-06-14 Carl Zeiss Smt Ag ラスタ要素を有する光学装置、及びこの光学装置を有する照射システム
KR20080068013A (ko) 2005-11-14 2008-07-22 가부시키가이샤 니콘 액체 회수 부재, 노광 장치, 노광 방법, 및 디바이스 제조방법
TW200725195A (en) 2005-12-06 2007-07-01 Nikon Corp Exposure method, exposure apparatus, and unit manufacturing method
EP3327759A1 (en) 2005-12-08 2018-05-30 Nikon Corporation Substrate holding apparatus, exposure apparatus, exposing method, and device fabricating method
EP1970943A4 (en) 2005-12-21 2010-07-28 OPTICAL INTEGRATOR, OPTICAL LIGHTING DEVICE, ALIGNER, AND DEVICE MANUFACTURING METHOD
US7532378B2 (en) 2006-02-21 2009-05-12 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, method of laser irradiation, and method for manufacturing semiconductor device
US7525642B2 (en) 2006-02-23 2009-04-28 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20090002830A1 (en) 2006-02-27 2009-01-01 Nikon Corporation Dichroic Filter
JP2007234110A (ja) * 2006-02-28 2007-09-13 Toshiba Corp 光情報記録装置および光情報記録装置の制御方法
WO2007100081A1 (ja) 2006-03-03 2007-09-07 Nikon Corporation 露光方法及び装置、並びにデバイス製造方法
JPWO2007132862A1 (ja) 2006-05-16 2009-09-24 株式会社ニコン 投影光学系、露光方法、露光装置、及びデバイス製造方法
JP4893112B2 (ja) 2006-06-03 2012-03-07 株式会社ニコン 高周波回路コンポーネント
EP2068349A4 (en) 2006-09-29 2011-03-30 Nikon Corp STAGE EQUIPMENT AND EXPOSURE DEVICE
US7804603B2 (en) * 2006-10-03 2010-09-28 Asml Netherlands B.V. Measurement apparatus and method
JP4924879B2 (ja) 2006-11-14 2012-04-25 株式会社ニコン エンコーダ
TWI452437B (zh) 2006-11-27 2014-09-11 尼康股份有限公司 An exposure method, a pattern forming method, and an exposure apparatus, and an element manufacturing method
JP4910679B2 (ja) 2006-12-21 2012-04-04 株式会社ニコン 可変キャパシタ、可変キャパシタ装置、高周波回路用フィルタ及び高周波回路
JP5146323B2 (ja) 2006-12-27 2013-02-20 株式会社ニコン ステージ装置、露光装置、及びデバイスの製造方法
WO2008090975A1 (ja) 2007-01-26 2008-07-31 Nikon Corporation 支持構造体及び露光装置
US8937706B2 (en) * 2007-03-30 2015-01-20 Asml Netherlands B.V. Lithographic apparatus and method
US9250536B2 (en) 2007-03-30 2016-02-02 Asml Netherlands B.V. Lithographic apparatus and method
US20080259304A1 (en) * 2007-04-20 2008-10-23 Asml Netherlands B.V. Lithographic apparatus and method
CN101681092B (zh) 2007-05-09 2012-07-25 株式会社尼康 光罩用基板、光罩用基板的成形构件、光罩用基板的制造方法、光罩、及使用光罩的曝光方法
US7573564B2 (en) * 2007-06-26 2009-08-11 The United States Of America As Represented By The Secretary Of The Army Systems for doppler tracking using photonic mixing detectors
US8451427B2 (en) 2007-09-14 2013-05-28 Nikon Corporation Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method
US20090091730A1 (en) * 2007-10-03 2009-04-09 Nikon Corporation Spatial light modulation unit, illumination apparatus, exposure apparatus, and device manufacturing method
JP5267029B2 (ja) 2007-10-12 2013-08-21 株式会社ニコン 照明光学装置、露光装置及びデバイスの製造方法
WO2009050976A1 (en) 2007-10-16 2009-04-23 Nikon Corporation Illumination optical system, exposure apparatus, and device manufacturing method
SG185313A1 (en) 2007-10-16 2012-11-29 Nikon Corp Illumination optical system, exposure apparatus, and device manufacturing method
US8379187B2 (en) 2007-10-24 2013-02-19 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
JP2010004008A (ja) * 2007-10-31 2010-01-07 Nikon Corp 光学ユニット、照明光学装置、露光装置、露光方法、およびデバイス製造方法
JPWO2009153925A1 (ja) 2008-06-17 2011-11-24 株式会社ニコン ナノインプリント方法及び装置
KR101504388B1 (ko) 2008-06-26 2015-03-19 가부시키가이샤 니콘 표시소자의 제조방법 및 제조장치
KR20110028473A (ko) 2008-06-30 2011-03-18 가부시키가이샤 니콘 표시 소자의 제조 방법 및 제조 장치, 박막 트랜지스터의 제조 방법 및 제조 장치, 및 회로 형성 장치

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070165202A1 (en) * 2003-09-12 2007-07-19 Carl Zeiss Smt Ag Illumination system for a microlithography projection exposure installation
TW200527151A (en) * 2003-11-07 2005-08-16 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
TW200519410A (en) * 2003-11-20 2005-06-16 Nikon Corp Light beam converter, optical illuminating apparatus, exposure device, and exposure method
US20050219495A1 (en) * 2003-12-19 2005-10-06 Carl Zeiss Smt Ag Beam reshaping unit for an illumination system of a microlithographic projection exposure apparatus
US20060001855A1 (en) * 2004-06-30 2006-01-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method

Also Published As

Publication number Publication date
SG10201602750RA (en) 2016-05-30
WO2009050977A1 (en) 2009-04-23
US8520291B2 (en) 2013-08-27
EP2179329A1 (en) 2010-04-28
KR101546987B1 (ko) 2015-08-24
CN101681125B (zh) 2013-08-21
TW200919115A (en) 2009-05-01
HK1139745A1 (en) 2010-09-24
KR20100087325A (ko) 2010-08-04
US20090097094A1 (en) 2009-04-16
JP2010034486A (ja) 2010-02-12
SG185313A1 (en) 2012-11-29
CN101681125A (zh) 2010-03-24
JP5287114B2 (ja) 2013-09-11

Similar Documents

Publication Publication Date Title
TWI456354B (zh) 照明光學系統、曝光裝置以及元件製造方法
HK1139746A1 (en) Illumination optical system, exposure apparatus, and device manufacturing method
JP2011003908A5 (zh)
JP2015132848A5 (ja) 照明光学系、露光装置、照明方法、露光方法、およびデバイス製造方法
JP2009527113A5 (zh)
TW200630179A (en) Optical illumination system for creating a line beam
EP2273305A3 (en) Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
TW200745772A (en) Exposure apparatus and device manufacturing method
ATE532105T1 (de) Beleuchtungsmethode
JP2009151221A5 (zh)
KR900008299A (ko) 조명방법 및 그 장치와 투영식 노출방법 및 그 장치
JP2010507103A5 (zh)
US10754168B2 (en) Illumination device
WO2008061681A3 (de) Beleuchtungsoptik für die projektions-mikrolithografie sowie mess- und überwachungsverfahren für eine derartige beleuchtungsoptik
JP2008171960A5 (zh)
JP2010062281A5 (zh)
JP2018506473A5 (zh)
JP2005236088A5 (zh)
JP2020086393A5 (zh)
JP2019140288A5 (zh)
JP2005244126A5 (zh)
TW200951413A (en) Wavefront aberration measuring method, mask, wavefront aberration measuring device, exposure apparatus, and device manufacturing method
WO2009078223A1 (ja) 空間光変調ユニット、照明光学系、露光装置、およびデバイス製造方法
ATE546286T1 (de) Erzeugung einer einheitlichen bildgebungsoberfläche
JP2007299993A5 (zh)

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees